KST-9041-000 1
2N5551
NPN Silicon Transistor
Descriptions
• General purpose amplifier
• High voltage application
Features
• High collector breakdown voltage : VCBO = 180V, VCEO = 160V
• Low collector saturation voltage : VCE(sat)=0.5V(MAX.)
• Complementary pair with 2N5401
Ordering Information
Type NO. Marking Package Code
2N5551 2N5551 TO-92
Outline Dimensions unit : mm
S
Se
em
mi
ic
co
on
nd
du
uc
ct
to
or
r
4.5±0.1
4.5±0.1
0.4±0.02
1.27 Typ.
2.54 Typ.
1 2 3
3.45±0.1
2.25±0.1
2.06±0.1
1.20±0.1
0.38
PIN Connections
1. Emitter
2. Base
3. Collector
14.0±0.40
KST-9041-000 2
2N5551
Absolute maximum ratings (Ta=25°C)
Characteristic Symbol Ratings Unit
Collector-Base voltage VCBO 180 V
Collector-Emitter voltage VCEO 160 V
Emitter-Base voltage VEBO 6 V
Collector current IC 600 mA
Collector dissipation PC 625 mW
Junction temperature Tj 150
°C
Storage temperature Tstg -55~150
°C
Electrical Characteristics (Ta=25°C)
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Collector-Base breakdown voltage BVCBO IC=100µA, IE=0 180 - - V
Collector-Emitter breakdown voltage BVCEO I
C=1mA, IB=0 160 - - V
Emitter-Base breakdown voltage BVEBO IE=10µA, IC=0 6 - - V
Collector cut-off current ICBO V
CB=120V, IE=0 - - 100 nA
Emitter cut-off current IEBO V
EB=4V, IC=0 - - 100 nA
DC current gain hFE (1) V
CE=5V, IC=1mA 80 - -
DC current gain hFE (2) V
CE=5V, IC=10mA 80 - 250 -
DC current gain hFE (3) V
CE=5V, IC=50mA 30 - -
Collector-Emitter saturation voltage VCE(sat)(1)
* IC=10mA, IB=1mA - - 0.2 V
Collector-Emitter saturation voltage VCE(sat)(2)
* IC=50mA, IB=5mA - - 0.5 V
Base-Emitter saturation voltage VBE(sat)(1)
* IC=10mA, IB=1mA - - 1 V
Base-Emitter saturation voltage VBE(sat)(2)* IC=50mA, IB=5mA - - 1 V
Transition frequency fT V
CE=10V, IC=10mA 100 - 400 MHz
Collector output capacitance Cob V
CB=10V, IE=0, f=1MHz - - 6 pF
* : Pulse Tester : Pulse Width ≤300µs, Duty Cycle ≤2.0%
KST-9041-000 3
2N5551
Electrical Characteristic Curves
Fig. 2 IC - VBE
Fig. 4 VCE(sat), VBE(sat) - IC Fig. 3 fT - IC
Fig. 5 Cob - VCB
Fig. 1 P
C-Ta
