MOTOROLA Order this document by MCM6729D/D SEMICONDUCTOR TECHNICAL DATA 256K x 4 Bit Fast Static Random Access Memory MCM6729D The MCM6729D is a 1,048,576 bit static random access memory organized as 262,144 words of 4 bits. Static design eliminates the need for external clocks or timing strobes. Output enable (G) is a special control feature that provides increased system flexibility and eliminates bus contention problems. This device meets JEDEC standards for functionality and revolutionary pinout, and is available in a 400 mil plastic small-outline J-leaded package. * * * * * * Single 5 V 10% Power Supply Fully Static -- No Clock or Timing Strobes Necessary All Inputs and Outputs Are TTL Compatible Three State Outputs Fast Access Times: 8, 10, 12 ns Center Power and I/O Pins for Reduced Noise PIN ASSIGNMENT BLOCK DIAGRAM A VCC VSS A A A A MEMORY MATRIX 512 ROWS x 512 x 4 COLUMNS ROW DECODER A A A A DQ COLUMN I/O COLUMN DECODER INPUT DATA CONTROL DQ E A A A A A A A WJ PACKAGE 400 MIL SOJ CASE 857A-02 NC 1 32 A A 2 31 A A 3 30 A A 4 29 A A 5 28 A E 6 27 G DQ 7 26 DQ VCC 8 25 VSS VSS 9 24 VCC DQ 10 23 DQ W 11 22 A A 12 21 A A 13 20 A A 14 19 A A 15 18 A NC 16 17 NC PIN NAMES A A A . . . . . . . . . . . . . . . . . . . . . Address Input E . . . . . . . . . . . . . . . . . . . . . . Chip Enable W . . . . . . . . . . . . . . . . . . . . Write Enable G . . . . . . . . . . . . . . . . . . . Output Enable DQ . . . . . . . . . . . . . . . Data Input/Output VCC . . . . . . . . . . . . + 5 V Power Supply VSS . . . . . . . . . . . . . . . . . . . . . . . Ground NC . . . . . . . . . . . . . . . . . . No Connection W G 10/9/96 Motorola, Inc. 1996 MOTOROLA FAST SRAM MCM6729D 1 TRUTH TABLE (X = Don't Care) E G W Mode VCC Current Output Cycle H X X Not Selected ISB1, ISB2 High-Z -- L H H Output Disabled ICCA High-Z -- L L H Read ICCA Dout Read Cycle L X L Write ICCA High-Z Write Cycle ABSOLUTE MAXIMUM RATINGS (See Note) Symbol Value Unit VCC - 0.5 to + 7.0 V Vin, Vout - 0.5 to VCC + 0.5 V Output Current Iout 30 mA Power Dissipation PD 1.2 W Temperature Under Bias Tbias - 10 to + 85 C Operating Temperature TA 0 to + 70 C Rating Power Supply Voltage Voltage Relative to VSS for Any Pin Except VCC This device contains circuitry to protect the inputs against damage due to high static voltages or electric fields; however, it is advised that normal precautions be taken to avoid application of any voltage higher than maximum rated voltages to these high-impedance circuits. This BiCMOS memory circuit has been designed to meet the dc and ac specifications shown in the tables, after thermal equilibrium has been established. The circuit is in a test socket or mounted on a printed circuit board and transverse air flow of at least 500 linear feet per minute is maintained. Storage Temperature -- Plastic Tstg - 55 to + 125 C NOTE: Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to RECOMMENDED OPERATING CONDITIONS. Exposure to higher than recommended voltages for extended periods of time could affect device reliability. DC OPERATING CONDITIONS AND CHARACTERISTICS (VCC = 5.0 V 10%, TA = 0 to 70C, Unless Otherwise Noted) RECOMMENDED OPERATING CONDITIONS Symbol Min Typ Max Unit Supply Voltage (Operating Voltage Range) Parameter VCC 4.5 5.0 5.5 V Input High Voltage VIH 2.2 -- VCC + 0.3** V Input Low Voltage VIL - 0.5* -- 0.8 V Symbol Min Max Unit Input Leakage Current (All Inputs, Vin = 0 to VCC) Ilkg(I) -- 1.0 A Output Leakage Current (E = VIH, Vout = 0 to VCC) * VIL (min) = - 0.5 V dc; VIL (min) = - 2.0 V ac (pulse width 2.0 ns) for I 20.0 mA. ** VIH (max) = VCC + 0.3 V dc; VIH (max) = VCC + 2 V ac (pulse width 2.0 ns) for I 20.0 mA. DC CHARACTERISTICS Parameter Ilkg(O) -- 1.0 A Output Low Voltage (IOL = + 8.0 mA) VOL -- 0.4 V Output High Voltage (IOH = - 4.0 mA) VOH 2.4 -- V POWER SUPPLY CURRENTS Parameter Symbol 6729D-8 6729D-10 6729D-12 Unit Notes AC Active Supply Current (Iout = 0 mA) (VCC = max, f = fmax) ICCA 195 165 155 mA 1, 2, 3 Active Quiescent Current (E = VIL, VCC = max, f = 0 MHz) ICC2 90 90 90 mA AC Standby Current (E = VIH, VCC = max, f = fmax) ISB1 60 60 60 mA CMOS Standby Current (VCC = max, f = 0 MHz, E VCC - 0.2 V, Vin VSS + 0.2 V, or VCC - 0.2 V) ISB2 20 20 20 mA 1, 2, 3 NOTES: 1. Reference AC Operating Conditions and Characteristics for input and timing (VIH/VIL, tr/tf, pulse level 0 to 3.0 V, VIH = 3.0 V). 2. All addresses transition simultaneously low (LSB) and then high (MSB). 3. Data states are all zero. MCM6729D 2 MOTOROLA FAST SRAM CAPACITANCE (f = 1.0 MHz, dV = 3.0 V, TA = 25C, Periodically Sampled Rather Than 100% Tested) Symbol Typ Max Unit Address Input Capacitance Cin -- 6 pF Control Pin Input Capacitance Cin -- 6 pF Input/Output Capacitance CI/O -- 8 pF Parameter AC OPERATING CONDITIONS AND CHARACTERISTICS (VCC = 5.0 V 10%, TA = 0 to +70C, Unless Otherwise Noted) Input Timing Measurement Reference Level . . . . . . . . . . . . . . . 1.5 V Input Pulse Levels . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0 to 3.0 V Input Rise/Fall Time . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 ns Output Timing Measurement Reference Level . . . . . . . . . . . . . 1.5 V Output Load . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . See Figure 1a READ CYCLE TIMING (See Notes 1 and 2) 6729D-8 Parameter 6729D-10 6729D-12 Symbol Min Max Min Max Min Max Unit Notes Read Cycle Time tAVAV 8 -- 10 -- 12 -- ns 3 Address Access Time tAVQV -- 8 -- 10 -- 12 ns Enable Access Time tELQV -- 8 -- 10 -- 12 ns Output Enable Access Time tGLQV -- 4 -- 5 -- 6 ns Output Hold from Address Change tAXQX 3 -- 3 -- 3 -- ns Enable Low to Output Active tELQX 3 -- 3 -- 3 -- ns 4,5,6 Output Enable Low to Output Active tGLQX 0 -- 0 -- 0 -- ns 4,5,6 Enable High to Output High-Z tEHQZ -- 4 -- 5 -- 6 ns 4,5,6 Output Enable High to Output High-Z tGHQZ -- 4 -- 5 -- 6 ns 4,5,6 NOTES: 1. W is high for read cycle. 2. For common I/O applications, minimization or elimination of bus contention conditions is necessary during read and write cycles. 3. All read cycle timings are referenced from the last valid address to the first transitioning address. 4. At any given voltage and temperature, tEHQZ (max) < tELQX (min), and tGHQZ (max) < tGLQX (min), both for a given device and from device to device. 5. Transition is measured 200 mV from steady-state voltage with load of Figure 1b. 6. This parameter is sampled and not 100% tested. 7. Device is continuously selected (E = VIL, G = VIL). 8. Addresses valid prior to or coincident with E going low. TIMING LIMITS +5 V 480 OUTPUT Z0 = 50 RL = 50 OUTPUT 255 5 pF VL = 1.5 V (a) (b) The table of timing values shows either a minimum or a maximum limit for each parameter. Input requirements are specified from the external system point of view. Thus, address setup time is shown as a minimum since the system must supply at least that much time. On the other hand, responses from the memory are specified from the device point of view. Thus, the access time is shown as a maximum since the device never provides data later than that time. Figure 1. AC Test Loads MOTOROLA FAST SRAM MCM6729D 3 READ CYCLE 1 (See Note 7) tAVAV A (ADDRESS) tAXQX Q (DATA OUT) PREVIOUS DATA VALID DATA VALID tAVQV READ CYCLE 2 (See Note 8) tAVAV A (ADDRESS) tAVQV tELQV E (CHIP ENABLE) tEHQZ tELQX G (OUTPUT ENABLE) tGHQZ tGLQV tGLQX Q (DATA OUT) MCM6729D 4 DATA VALID MOTOROLA FAST SRAM WRITE CYCLE 1 (W Controlled, See Notes 1 and 2) 6729D-8 Parameter 6729D-10 6729D-12 Symbol Min Max Min Max Min Max Unit Notes tAVAV 8 -- 10 -- 12 -- ns 3 Address Setup Time tAVWL 0 -- 0 -- 0 -- ns Address Valid to End of Write tAVWH 8 -- 9 -- 10 -- ns Address Valid to End of Write, G High tAVWH 7 -- 8 -- 9 -- ns Write Pulse Width tWLWH, tWLEH 8 -- 9 -- 10 -- ns Write Pulse Width, G High tWLWH, tWLEH 7 -- 8 -- 9 -- ns Data Valid to End of Write tDVWH 4 -- 5 -- 6 -- ns Data Hold Time tWHDX 0 -- 0 -- 0 -- ns Write Low to Data High-Z tWLQZ -- 4 -- 5 -- 6 ns 4,5,6 Write High to Output Active tWHQX 3 -- 3 -- 3 -- ns 4,5,6 Write Cycle Time Write Recovery Time tWHAX 0 -- 0 -- 0 -- ns NOTES: 1. A write occurs during the overlap of E low and W low. 2. For common I/O applications, minimization or elimination of bus contention conditions is necessary during read and write cycles. 3. All write cycle timings are referenced from the last valid address to the first transitioning address. 4. Transition is measured 200 mV from steady-state voltage with load of Figure 1b. 5. This parameter is sampled and not 100% tested. 6. At any given voltage and temperature, tWLQZ max < tWHQX min both for a given device and from device to device. WRITE CYCLE 1 tAVAV A (ADDRESS) tAVWH tWHAX E (CHIP ENABLE) tWLEH tWLWH W (WRITE ENABLE) tDVWH tAVWL D (DATA IN) tWHDX DATA VALID tWLQZ Q (DATA OUT) HIGH-Z HIGH-Z tWHQX MOTOROLA FAST SRAM MCM6729D 5 WRITE CYCLE 2 (E Controlled, See Notes 1 and 2) 6729D-8 Parameter 6729D-10 6729D-12 Symbol Min Max Min Max Min Max Unit Notes tAVAV 8 -- 10 -- 12 -- ns 3 Address Setup Time tAVEL 0 -- 0 -- 0 -- ns Address Valid to End of Write tAVEH 7 -- 8 -- 9 -- ns Enable to End of Write tELEH, tELWH 7 -- 8 -- 9 -- ns Data Valid to End of Write tDVEH 4 -- 5 -- 6 -- ns Data Hold Time tEHDX 0 -- 0 -- 0 -- ns Write Recovery Time tEHAX 0 -- 0 -- 0 -- ns Write Cycle Time 4,5 NOTES: 1. A write occurs during the overlap of E low and W low. 2. For common I/O applications, minimization or elimination of bus contention conditions is necessary during read and write cycles. 3. All write cycle timings are referenced from the last valid address to the first transitioning address. 4. If E goes low coincident with or after W goes low, the output will remain in a high impedance condition. 5. If E goes high coincident with or before W goes high, the output will remain in a high impedance condition. WRITE CYCLE 2 tAVAV A (ADDRESS) tAVEH tELEH E (CHIP ENABLE) tAVEL tELWH tEHAX W (WRITE ENABLE) tDVEH D (DATA IN) tEHDX DATA VALID HIGH-Z Q (DATA OUT) ORDERING INFORMATION (Order by Full Part Number) MCM 6729D WJ XX X Motorola Memory Prefix Shipping Method (R = Tape and Reel, Blank = Rails) Part Number Speed (8 = 8 ns, 10 = 10 ns, 12 = 12 ns) Package (WJ = 400 mil SOJ) Full Part Numbers -- MCM6729DWJ8 MCM6729DWJ8R MCM6729D 6 MCM6729DWJ10 MCM6729DWJ10R MCM6729DWJ12 MCM6729DWJ12R MOTOROLA FAST SRAM PACKAGE DIMENSIONS 32-LEAD 400 MIL SOJ CASE 857A-02 F 32 PL 0.17 (0.007) T B S S A S N 32 D 32 PL 0.17 (0.007) S 17 1 T B A S S NOTE 3 DETAIL Z 16 0.17 (0.007) -A- S T A S B S P L G -BE C 0.10 (0.004) K DETAIL Z -T- SEATING PLANE S RADIUS R 0.25 (0.010) S T A S NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. TO BE DETERMINED AT PLANE -T-. 4. DIMENSION A & B DO NOT INCLUDE MOLD PROTRUSION. MOLD PROTRUSION SHALL NOT EXCEED 0.15 (0.006) PER SIDE. 5. DIMENSION A & B INCLUDE MOLD MISMATCH AND ARE DETERMINED AT THE PARTING LINE. B S NOTE 3 DIM A B C D E F G K L N P R S INCHES MIN MAX 0.820 0.830 0.395 0.405 0.128 0.148 0.016 0.020 0.088 0.098 0.026 0.032 0.050 BSC 0.035 0.045 0.025 BSC 0.030 0.045 0.435 0.445 0.365 0.375 0.030 0.040 MILLIMETERS MIN MAX 20.83 21.08 10.03 10.29 3.75 3.26 0.50 0.41 2.48 2.24 0.81 0.67 1.27 BSC 1.14 0.89 0.64 BSC 1.14 0.76 11.05 11.30 9.52 9.27 1.01 0.77 Motorola reserves the right to make changes without further notice to any products herein. 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