BDX53B / BDX53C
BDX54B / BDX54C
COMPLEMENTARY SILICON POWER
DARLINGTON TRANSISTORS
■STMicroelectronicsPREFERRED
SALESTYPES
APPLICATIONS
■AUDIO AMPLIFIERS
■LINEARAND SWITCHING INDUSTRIAL
EQUIPMENT
DESCRIPTION
The BDX53B and BDX53C are silicon
Epitaxial-Base NPN power transistors in
monolithic Darlington configuration mounted in
Jedec TO-220 plastic package. They are intented
for use in hammer drivers, audio amplifiers and
other medium power linear and switching
applications.
The complementary PNP types are BDX54B and
BDX54Crespectively.
INTERNAL SCHEMATIC DIAGRAM
September 1999
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
NPN BDX53B BDX53C
PNP BDX54B BDX54C
VCBO Collector-Base Voltage (IE= 0) 80 100 V
VCEO Collector-Emitter Voltage (IB= 0) 80 100 V
VEBO Emitter-base Voltage (IC=0) 5 V
I
CCollector Current 8 A
ICM Collector Peak Current (repetitive) 12 A
IBBase Current 0.2 A
Ptot Total Dissipation at Tc≤ 25 oC60 W
Tstg Storage Temperature -65 to 150 oC
TjMax. Operating Junction Temperature 150 oC
For PNP types voltage and current values are negative.
123
TO-220
R1Typ. = 10 KΩR2Typ. = 150 Ω
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THERMAL DATA
Rthj-case
Rthj-amb Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max 2.08
70
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase =25oC unless otherwisespecified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ICBO Collector Cut-off
Current (IE=0) for BDX53B/54B VCB =80V
for BDX53C/54C VCB =100V 0.2
0.2 mA
mA
ICEO Collector Cut-off
Current (IB=0) for BDX53B/54B VCE =40V
for BDX53C/54C VCE =50V 0.5
0.5 mA
mA
IEBO Emitter Cut-off Current
(IC=0) V
EB =5V 2 mA
V
CEO(sus)∗Collector-Emitter
Sustaining Voltage
(IB=0)
I
C=100mA forBDX53B/54B
for BDX53C/54C 80
100 V
V
VCE(sat)∗Collector-emitter
Saturation Voltage IC=3A I
B=12 mA 2 V
VBE(sat)∗Base-emitter
Saturation Voltage IC=3A I
B=12 mA 2.5 V
hFE∗DC Current Gain IC=3A V
CE = 3 V 750
VF∗Parallel-diode Forward
Voltage IF=3A
I
F=8A 1.8
2.5 2.5 V
V
∗
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
For PNP types voltage and current values are negative.
SafeOperating Area Derating Curve
BDX53B - BDX53C - BDX54B - BDX54C
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DC CurrentGain (NPN type)
Collector Emitter Saturation Voltage(NPN type)
BaseEmitter Saturation Voltage(NPN type)
DC CurrentGain (PNP type)
Collector Emitter Saturation Voltage(PNP type)
BaseEmitter Saturation Voltage(PNP type)
BDX53B - BDX53C - BDX54B - BDX54C
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BaseEmitter On Voltage(NPN type)
Freewheel Diode Forward Voltage (NPN type)
Base Emitter On Voltage (PNP type)
FreewheelDiode Forward Voltage (PNP type)
Switching Time Resistive Load (NPN type) Switching Time resistive Load (PNP type)
BDX53B - BDX53C - BDX54B- BDX54C
4/6
DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151
P011C
TO-220 MECHANICAL DATA
BDX53B - BDX53C - BDX54B - BDX54C
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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in thispublication are
subject tochange without notice. Thispublication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components inlife support devices or systems without express written approval of STMicroelectronics.
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BDX53B - BDX53C - BDX54B- BDX54C
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