BD676A/678A/680A/682 BD676A/678A/680A/682 Medium Power Linear and Switching Applications * Medium Power Darlington TR * Complement to BD675A, BD677A, BD679A and BD681 respectively TO-126 1 PNP Epitaxial Silicon Transistor 1. Emitter 2.Collector 3.Base Absolute Maximum Ratings TC=25C unless otherwise noted Symbol VCBO Parameter : BD676A : BD678A : BD680A : BD682 Collector-Base Voltage Value - 45 - 60 - 80 - 100 Units V V V V - 45 - 60 - 80 - 100 V V V V VCEO Collector-Emitter Voltage : BD676A : BD678A : BD680A : BD682 VEBO Emitter-Base Voltage -5 V IC Collector Current (DC) -4 A ICP *Collector Current (Pulse) IB Base Current -6 A - 100 mA PC Collector Dissipation (TC=25C) 14 W Rja Thermal Resistance (Junction to Ambient) 88 C/W TJ Junction Temperature 150 C TSTG Storage Temperature - 65 ~ 150 C Electrical Characteristics TC=25C unless otherwise noted Symbol VCEO(sus) Parameter Collector-Emitter Sustaining Voltage : BD676A : BD678A : BD680A : BD682 Test Condition IC = - 50mA, IB = 0 Min. Typ. Max. Units - 45 - 60 - 80 - 100 ICBO Collector-Base Voltage : BD676A : BD678A : BD680A : BD682 VCB = - 45V, IE = 0 VCB = - 60V, IE = 0 VCB = - 80V, IE = 0 VCB = - 100V, VBE = 0 - 200 - 200 - 200 - 200 A A A A ICEO Collector Cut-off Current : BD676A : BD678A : BD680A : BD682 VCE = - 45V, VBE = 0 VCE = - 60V, VBE = 0 VCE = - 80V, VBE = 0 VCE = - 100V, VBE = 0 - 500 - 500 - 500 - 500 A A A A VEB = - 5V, IC = 0 -2 mA IEBO Emitter Cut-off Current hFE * DC Current Gain VCE(sat) * Collector-Emitter Saturation Voltage : BD676A/678A/680A : BD682 IC = - 2A, IB = - 40mA IC = - 1.5A, IB = - 30mA - 2.8 - 2.5 V V * Base-Emitter On Voltage : BD676A/678A/680A : BD682 VCE = - 3V, IC = - 2A VCE = - 3V, IC = - 1.5A - 2.5 - 2.5 V V VBE(on) : BD676A/678A/680A : BD682 VCE = - 3V, IC = - 2A VCE = - 3V, IC = - 1.5A 750 750 * Pulse Test: PW=300s, duty Cycle=1.5% Pulse (c)2002 Fairchild Semiconductor Corporation Rev. B, September 2002 BD676A/678A/680A/682 Typical Characteristics 10000 VCE(sat)[V], SATURATION VOLTAGE hFE, DC CURRENT GAIN VCE = -3V 1000 100 -0.1 -1 IC = 250 IB -2.4 -2.0 -1.6 -1.2 -0.8 -0.4 -0.0 -0.1 -10 IC[A], COLLECTOR CURRENT -1 -10 IC[A], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Collector-Emitter Saturation Voltage -4.0 10 s IC(max). Continuous IC[A], COLLECTOR CURRENT -3.2 -2.8 -2.4 -2.0 -1.6 -1.2 -0.8 DC IC[A], COLLECTOR CURRENT IC(max). Pulsed VCE = 3V -3.6 -1 100 s BD676A BD678A BD680A BD682 -0.4 -0.0 -0.0 1ms 10ms -0.1 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -1.8 -2.0 -1 -10 -100 -1000 VCE [V], COLLECTOR-EMITTER VOLTAGE VBE[V], BASE-EMITTER VOLTAGE Figure 3. Base-Emitter On Voltage Figure 4. Safe Operating Area PC[W], POWER DISSIPATION 20 16 12 8 4 0 0 25 50 75 100 125 150 175 200 o TC[ C], CASE TEMPERATURE Figure 5. Power Derating (c)2002 Fairchild Semiconductor Corporation Rev. B, September 2002 BD676A/678A/680A/682 Package Dimensions 8.00 0.30 11.00 o3.20 0.10 0.20 3.25 0.20 14.20MAX 3.90 0.10 TO-126 (1.00) (0.50) 0.75 0.10 #1 2.28TYP [2.280.20] 2.28TYP [2.280.20] 16.10 0.30 13.06 0.75 0.10 0.20 1.75 0.20 1.60 0.10 +0.10 0.50 -0.05 Dimensions in Millimeters (c)2002 Fairchild Semiconductor Corporation Rev. B, September 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM FACTTM ActiveArrayTM FACT Quiet seriesTM BottomlessTM FAST(R) FASTrTM CoolFETTM CROSSVOLTTM FRFETTM GlobalOptoisolatorTM DOMETM EcoSPARKTM GTOTM E2CMOSTM HiSeCTM EnSignaTM I2CTM Across the board. Around the world.TM The Power FranchiseTM Programmable Active DroopTM ImpliedDisconnectTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET(R) VCXTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. (c)2002 Fairchild Semiconductor Corporation Rev. I1