TECHNICAL DATA
NPN SILICON HIGH POWER TRANSISTOR
Qualified per MIL-PRF-19500/208
Devices Qualified Level
2N1487 2N1488 2N1489 2N1490
MAXIMUM RATINGS
Ratings Symbol 2N1487
2N1498 2N1488
2N1490 Unit
Collector-Emitter Voltage VCEO 40 55 Vdc
Collector-Base Voltage VCBO 60 100 Vdc
Collector-Emitter Voltage VCEX 60 100 Vdc
Emitter-Base Voltage VEBO 10 Vdc
Base Current IB 3.0 Adc
Collector Current IC 6.0 Adc
Total Power Dissipation @ TC = 250C (1) PT 75 W
Operating & Storage Junction Temperature Range TJ, Tstg -65 to +200 0C
THERMAL CHARACTERISTICS
Characteristics Symbol Max. Unit
Thermal Resistance, Junction-to-Case RθJC 2.33 0C/W
1) Derate linearly @ 0.429 W/0C for TC > 250C
TO-33*
(TO-204AA)
*See Appendix A for
Package Outline
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 100 mAdc 2N1487, 2N1489
2N1488, 2N1490
V(BR)CEO
40
55
Vdc
Collector-Emitter Breakdown Voltage
IC = 200 µAdc 2N1487, 2N1489
2N1488, 2N1490
V(BR)CBO
60
100
Vdc
Collector-Emitter Breakdown Voltage
IC = 0.5 mAdc, VEB = 1.5 Vdc 2N1487, 2N1489
2N1488, 2N1490
V(BR)CEX
60
100
Vdc
Collector-Base Cutoff Current
VCB = 30 Vdc ICBO 25 µAdc
Emitter-Base Cutoff Current
VEB = 10 Vdc IEBO 25 µAdc
6 Lake Street, Lawrence, MA 01841
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