BAT54LT1G, NSVBAT54LT1G Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. Extremely Fast Switching Speed Low Forward Voltage - 0.35 Volts (Typ) @ IF = 10 mAdc AEC Qualified and PPAP Capable NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant* http://onsemi.com 30 VOLTS SILICON HOT-CARRIER DETECTOR AND SWITCHING DIODES MAXIMUM RATINGS (TJ = 125C unless otherwise noted) Symbol Value Unit Reverse Voltage VR 30 Volts Forward Power Dissipation @ TA = 25C Derate above 25C PF 200 2.0 mW mW/C Forward Current (DC) IF 200 Max mA Rating Non-Repetitive Peak Forward Current tp < 10 msec IFSM Repetitive Peak Forward Current Pulse Wave = 1 sec, Duty Cycle = 66% IFRM 600 300 SOT-23 (TO-236) CASE 318 STYLE 8 3 CATHODE 1 ANODE MARKING DIAGRAM mA mA JV3 M G G 1 Junction Temperature TJ -55 to +125 C Storage Temperature Range Tstg -55 to +150 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. JV3 M G = Device Code = Date Code = Pb-Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping BAT54LT1G SOT-23 (Pb-Free) 3,000 / Tape & Reel NSVBAT54LT1G SOT-23 (Pb-Free) 3,000 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2011 November, 2011 - Rev. 11 Publication Order Number: BAT54LT1/D BAT54LT1G, NSVBAT54LT1G ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Symbol Characteristic Reverse Breakdown Voltage (IR = 10 A) V(BR)R Total Capacitance (VR = 1.0 V, f = 1.0 MHz) CT Reverse Leakage (VR = 25 V) IR Forward Voltage (IF = 0.1 mAdc) VF Forward Voltage (IF = 30 mAdc) VF Forward Voltage (IF = 100 mAdc) VF Reverse Recovery Time (IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc, Figure 1) trr Forward Voltage (IF = 1.0 mAdc) VF Forward Voltage (IF = 10 mAdc) VF Min Typ Max 30 - - - 7.6 10 - 0.5 2.0 - 0.22 0.24 - 0.41 0.5 - 0.52 0.8 - - 5.0 - 0.29 0.32 - 0.35 0.40 Unit Volts pF Adc Vdc Vdc Vdc ns Vdc Vdc 820 +10 V 2k 100 H 0.1 F tr IF 0.1 F tp T IF trr 10% T DUT 50 OUTPUT PULSE GENERATOR 50 INPUT SAMPLING OSCILLOSCOPE 90% VR IR INPUT SIGNAL iR(REC) = 1 mA OUTPUT PULSE (IF = IR = 10 mA; measured at iR(REC) = 1 mA) Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp trr Figure 1. Recovery Time Equivalent Test Circuit http://onsemi.com 2 BAT54LT1G, NSVBAT54LT1G 100 IF, FORWARD CURRENT (mA) 1 25C 85C 10 1 50C 1.0 25C 0.1 0.0 -40C -55C 0.2 0.3 0.4 0.1 0.5 VF, FORWARD VOLTAGE (VOLTS) 0.6 Figure 2. Forward Voltage IR, REVERSE CURRENT (A) 1000 TA = 150C 100 TA = 125C 10 1.0 TA = 85C 0.1 0.01 0.001 TA = 25C 0 5 15 25 10 20 VR, REVERSE VOLTAGE (VOLTS) 30 Figure 3. Leakage Current CT, TOATAL CAPACITANCE (pF) 14 12 10 8 6 4 2 0 0 5 10 15 20 VR, REVERSE VOLTAGE (VOLTS) Figure 4. Total Capacitance http://onsemi.com 3 25 30 BAT54LT1G, NSVBAT54LT1G PACKAGE DIMENSIONS SOT-23 (TO-236) CASE 318-08 ISSUE AP NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. D SEE VIEW C 3 HE E DIM A A1 b c D E e L L1 HE q c 1 2 e b 0.25 q A L A1 MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 0 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 --- 10 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 0 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 --- MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 10 STYLE 8: PIN 1. ANODE 2. NO CONNECTION 3. CATHODE L1 VIEW C SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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