© 2011 IXYS CORPORATION, All Rights Reserved
IXGA50N60C4
IXGP50N60C4
IXGH50N60C4
VCES = 600V
IC110 = 46A
VCE(sat) ≤ ≤
≤ ≤
≤
2.3V
Symbol Test Conditions Maximum Ratings
VCES TJ= 25°C to 150°C 600 V
VCGR TJ= 25°C to 150°C, RGE = 1MΩ 600 V
VGES Continuous ±20 V
VGEM Transient ±30 V
IC25 TC= 25°C 90 A
IC110 TC= 110°C 46 A
ICM TC= 25°C, 1ms 220 A
SSOA VGE = 15V, TVJ = 125°C, RG = 10Ω ICM = 72 A
(RBSOA) Clamped Inductive Load VCE ≤ VCES
PCTC= 25°C 300 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TLMaximum Lead Temperature for Soldering 300 °C
TSOLD 1.6 mm (0.062in.) from Case for 10s 260 °C
FCMounting Force (TO-263) 10..65 / 2.2..14.6 N/lb.
MdMounting Torque (TO-220 & TO-247) 1.13 / 10 Nm/lb.in.
Weight TO-263 2.5 g
TO-220 3.0 g
TO-247 6.0 g
DS100298C(10/11)
G = Gate D = Collector
S = Emitter Tab = Collector
TO-247 (IXGH)
G
E
CC (Tab)
TO-263 AA (IXGA)
G
E
C (Tab)
GCE
TO-220AB (IXGP)
C (Tab)
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified Min. Typ. Max.
BVCES IC= 250μA, VGE = 0V 600 V
VGE(th) IC= 250μA, VCE = VGE 4.0 6.5 V
ICES VCE = VCES, VGE = 0V 25 μA
TJ = 125°C 1 mA
IGES VCE = 0V, VGE = ±20V ±100 nA
VCE(sat) IC= 36A, VGE = 15V, Note 1 1.9 2.3 V
TJ = 125°C 1.6 V
High-Gain IGBTs
High-Speed PT Trench IGBT
Features
zOptimized for Low Switching Losses
zInternational Standard Packages
zSquare RBSOA
Advantages
zEasy to Mount
zSpace Savings
Applications
zPower Inverters
zUPS
zMotor Drives
zSMPS
zPFC Circuits
zBattery Chargers
zLamp Ballasts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXGA50N60C4 IXGP50N60C4
IXGH50N60C4
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A12.2 2.54 .087 .102
A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b11.65 2.13 .065 .084
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
e
∅ P
TO-247 Outline
1 2 3
Terminals: 1 - Gate 2 - Collector
3 - Emitter
TO-263 Outline
Pins: 1 - Gate 2 - Drain
TO-220 Outline
1 = Gate
2 = Collector
3 = Emitter
4 = Collector
1 = Gate 2 = Collector
3 = Emitter
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
gfs IC = 36A, VCE = 10V, Note 1 20 30 S
Cies 1900 pF
Coes VCE = 25V, VGE = 0V, f = 1MHz 100 pF
Cres 60 pF
Qg 113 nC
Qge IC = IC110, VGE = 15V, VCE = 0.5 • VCES 13 nC
Qgc 44 nC
td(on) 40 ns
tri 66 ns
Eon 0.95 mJ
td(off) 270 ns
tfi 63 ns
Eoff 0.84 1.55 mJ
td(on) 30 ns
tri 45 ns
Eon 1.10 mJ
td(off) 210 ns
tfi 96 ns
Eoff 0.90 mJ
RthJC 0.42 °C/W
RthCS TO-247 0.21 °C/W
TO-220 0.50 °C/W
Inductive Load, TJ = 125°C
IC = 36A, VGE = 15V
VCE = 400V, RG = 10Ω
Note 2
Inductive Load, TJ = 25°C
IC = 36A, VGE = 15V
VCE = 400V, RG = 10Ω
Note 2
Notes:
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.
© 2011 IXYS CORPORATION, All Rights Reserved
IXGA50N60C4 IXGP50N60C4
IXGH50N60C4
Fi g . 1. Ou tpu t C har acteri sti cs @ T
J
= 25ºC
0
10
20
30
40
50
60
70
80
90
100
00.511.522.53
V
CE
- Volts
I
C
- Amperes
VGE
= 15V
13V
11V
10V 9V
7V
8V
6V
Fig. 2. Extended Output Characteristics @ T
J
= 25ºC
0
50
100
150
200
250
300
0 5 10 15 20 25 30
V
CE
- Volts
I
C
- Amperes
VGE
= 15V
9V
10V
12V
14V
13V
8V
11V
7V
6V
Fi g. 3. Ou tp ut C har act er i sti cs @ T
J
= 125º C
0
10
20
30
40
50
60
70
80
90
100
0 0.5 1 1.5 2 2.5 3
V
CE
- Volts
I
C
- Amperes
VGE
= 15V
13V
12V
11V
10V
8V
9V
7V
6V
Fig. 4. Dependence of V
CE(sat)
on
Junction T emperature
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
-25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
V
CE(sat)
- Normalized
VGE
= 15V
I C = 36A
I C = 18A
I C = 72A
Fi g . 5. C o l l ector -to -E mi tter Vol tag e vs.
Gate-to -Emi tter V o l tag e
1.5
2.0
2.5
3.0
3.5
4.0
4.5
6 7 8 9 10 11 12 13 14 15
V
GE
- Volts
V
CE
- Volts
I C
= 72
A
TJ = 25ºC
36
A
18
A
Fig. 6. Input Admittance
0
20
40
60
80
100
120
140
160
4.5 5 5.5 6 6.5 7 7.5 8 8.5 9 9.5 10
V
GE
- Volts
I
C
- Amperes
TJ = - 40ºC
25ºC
125ºC
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXGA50N60C4 IXGP50N60C4
IXGH50N60C4
Fig. 7. Transconductance
0
5
10
15
20
25
30
35
40
45
0 20 40 60 80 100 120 140
IC - Amperes
g
f s
- Siemens
T
J
= - 40ºC
25ºC
125ºC
Fi g . 10. Rever se-B ias Safe Oper ati ng Area
0
10
20
30
40
50
60
70
80
100 150 200 250 300 350 400 450 500 550 600 650
VCE - Volts
IC - Amperes
T
J
= 125ºC
R
G
= 10
Ω
dv / dt < 10V / ns
Fi g . 11. Maximum Tran sien t Thermal Imp ed ance
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1
Pulse Width - Second
Z(th)JC - ºC / W
Fig. 8. Gate Charge
0
2
4
6
8
10
12
14
16
0 20 40 60 80 100 120
QG - NanoCoulombs
VGE - Volts
V
CE
= 300V
I
C
= 36A
I
G
= 10mA
Fig. 9. Capacitance
10
100
1,000
10,000
0 5 10 15 20 25 30 35 40
VCE - Volts
Capacitance - PicoFarads
f
= 1 MHz
Cies
Coes
Cres
© 2011 IXYS CORPORATION, All Rights Reserved
IXGA50N60C4 IXGP50N60C4
IXGH50N60C4
Fig. 12. Inductive Switching Energy Loss vs.
Gate Resistance
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
10 15 20 25 30 35
R
G
- Ohms
E
off
- MilliJoules
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
E
on
- MilliJoules
E
off
E
on
- - - -
T
J
= 125ºC , V
GE
= 15V
V
CE
= 400V
I
C
= 36A
I
C
= 72A
Fig. 15. Inductive Turn-off Switching T imes vs.
Gate Resistance
90
95
100
105
110
115
120
125
130
135
10 15 20 25 30 35
R
G
- Ohms
t
f i
- Nanoseconds
100
150
200
250
300
350
400
450
500
550
t
d
(
off
)
- Nanoseconds
t
f i
t
d(off)
- - - -
T
J
= 125ºC, V
GE
= 15V
V
CE
= 400V
I
C
= 36A
I
C
= 72A
Fig. 13. Inductive Switching Energy Loss vs.
Collector Current
0
0.5
1
1.5
2
2.5
3
3.5
15 25 35 45 55 65 75
I
C
- Amperes
E
off
- MilliJoules
0
0.5
1
1.5
2
2.5
3
3.5
E
on
- MilliJoules
E
off
E
on
- - - -
R
G
= 10
Ω ,
V
GE
= 15V
V
CE
= 400V
T
J
= 125ºC, 25ºC
Fig. 14. Inductive Switching Energy Loss vs.
Junction T emperature
0
0.5
1
1.5
2
2.5
3
3.5
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
E
off
- MilliJoules
0
0.5
1
1.5
2
2.5
3
3.5
E
on
- MilliJoules
E
off
E
on
- - - -
R
G
= 10
Ω ,
V
GE
= 15V
V
CE
= 400V
I
C
= 36A
I
C
= 72A
Fig. 16. Inductive Turn-off Switching Times vs.
Collector Current
30
50
70
90
110
130
150
15 25 35 45 55 65 75
I
C
- Amperes
t
f i
- Nanoseconds
120
160
200
240
280
320
360
t
d
(
off
)
- Nanoseconds
t
f i
t
d(off)
- - - -
R
G
= 10
Ω
, V
GE
= 15V
V
CE
= 400V
T
J
= 25ºC, 125ºC
Fig. 17. Inductive Turn-off Switching T imes vs.
Junction T emperature
50
60
70
80
90
100
110
120
130
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
f i
- Nanoseconds
160
180
200
220
240
260
280
300
320
t
d
(
off
)
- Nanoseconds
t
f i
t
d(on)
- - - -
R
G
= 10
Ω
, V
GE
= 15V
V
CE
= 400V
I
C
= 72A
I
C
= 36A
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXGA50N60C4 IXGP50N60C4
IXGH50N60C4
Fig. 19. Inductive Turn-on Switching Ti mes vs.
Collector Current
0
20
40
60
80
100
120
140
15 25 35 45 55 65 75
I
C
- Amperes
t
r i - Nanoseconds
10
20
30
40
50
60
70
80
t
d
(
on
)
- Nanoseconds
t
r i
td(on)
- - - -
R
G
= 10
Ω
, V
GE
= 15V
V
CE
= 400V
T
J
= 25ºC
T
J
= 125ºC
Fig. 20. Inductive Turn-on Switching Ti mes vs.
Jun c ti o n Temp er at u r e
0
20
40
60
80
100
120
140
160
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
r i - Nanoseconds
24
28
32
36
40
44
48
52
56
t
d
(
on
)
- Nanoseconds
t
r i
td(on)
- - - -
R
G
= 10
Ω
, V
GE
= 15V
V
CE
= 400V
I
C
= 72A
I
C
= 36A
Fi g . 18. I n d u ct i ve Tu rn-o n Sw i tch i ng Times vs.
Gate R esi stan c e
20
40
60
80
100
120
140
160
10 15 20 25 30 35
R
G
- Ohms
t
r i
- Nanoseconds
20
30
40
50
60
70
80
90
t
d
(
on
)
- Nanoseconds
t
r i
td(on)
- - - -
T
J
= 125ºC, V
GE
= 15V
V
CE
= 400V
I
C
= 36A
I
C
= 72A
IXYS REF: G_50N60C4(L5)03-23-11
