TEXAS INSTR LOPTOF be DE ff s561726 003661? 1 T-33-29 s967726 TEXAS INSTR COPTO) ~ 62C 36617 D y BDX53, BDX53A, BDX53B, BDX53C N-P-N SILICON POWER DARLINGTONS REVISED OCTOBER 1984 @ 60Wat 25C Case Temperatura @ 8AContinuous Collector Current @ Minhge of 750 at3V,3A device schematic TO-220AB PACKAGE EMITTER COLLECTOR BASE ee JS THE COLLECTOR IS IN ELECTRICAL CONTACT WITH THE MOUNTING TAB absolute maximum ratings at 25C case temperature (unless otherwise noted) BDX53A | BDX53B | BOX53C current current at case temperature (see Note 1} at it temperature {see Note 2} temperature range temperature NOTES: 1. Derate linearly to 150C case temperature at the rate of 0.48W/C, 2. Derate linearly to 150C free-air temperature at the rate of 16 mW/C. BD, BDW, BDX, BU, BUX, BUY Devices TEXAS wy 3-21 mm . INSTRUMENTS POST OFFICE BOX 225012 DALLAS, TEXAS 76265 * . TEXAS INSTR {OPTO} bz DE J acu1721 OO3bLbLLa O I 8867726 TEXAS INSTR COPTO) " &2E 36618 D -t- 5 en. tee eset v8 fone SN : T-33-29 BDX53, BDX53A, BDX53B, BDX53C N-P-N SILICON POWER DARLINGTONS t electrical characteristics at 25C case temperature PARAMETER TEST CONDITIONS BDX&3 BOXG3A BDX53C UNIT MIN TYP MAX |MIN TYP MAX {MIN TYP MAX {MIN TYP MAX ViBRICEO eto mA: ~| 45 60 80 100 lov Iceo = pA IcBO - VCe=3, . See Notes 3 and 4 . ~ See Notes 3 and 4 v CE(sat) See Notes 3 and 4 hrE VBE(sat} NOTES: 3. These parameters must be measured using pulse techniques, ty, = 300 ps, duty cycle < 2%. 4. These parameters are measured with voltage-sensing contacts separate from the current-carrying contacts and located within w 3,2 mm (0.125 inch) from the device body. Oo ; sas, - . thermal! characteristics w PARAMETER MIN TYP MAX | UNIT g Resc 2,08 CW = Resa . 62.5 . - wo resistive-load switching characteristics at 25C case temperature oO PARAMETER TEST CONDITIONS MIN TYP MAX | UNIT | ~ x ton ic=3A, _ Igi=i2mA, Iga=12mA, 7 w torr VBE(of}=-4.5V, RL =102, See Figure 1 5 7 Cc , = 7 t w . i Cc . x wo \ i Cc - . t =< - . i oO. < . =e : o oO a 3-22 . Ti 4B EXAS INSTRUMENTS - POST OFFICE BOX 225012 DALLAS, TEXAS 75265 1283 TEXAS INSTR LOPTO} be DE Bp aibiret OO5b614 i =, g961726 TEXAS INSTR COPTOY 62C 36619 OD } BDX53, BDX53A, BDX53B, BDX53C N-P-N SILICON POWER DARLINGTONS oo : T-33-29 i ! PARAMETER MEASUREMENT INFORMATION . . i INPUT MONITOR OUTPUT MONITOR pie ee en oe et ere ene 1 1NO14 Aggi = 1.2 kat | 662 Il ' 2N6127 | TUT t 4N914 1N914 1N914 1 \ t t { Lo rss Pt 270 pF , 3 3022 Rep2 = 5602 go AL=102 Vv ? uF 4 gen - = Ves2"5V eit, + _ = Vco=30V i Vapi = 32V + - ADJUST FOR Von = 30 VAT = . INPUT MONITOR DP TEST CIRCUIT Von =30 === 90% INPUT 0 MONITOR V--270% ~ 77 T77 sa -4.5V 10% 10% OUTPUT , . ! MONITOR , 90% . VOLTAGE WAVEFORMS ~ NOTES: A. Vgenise - 30-V pulse into a 50 termination. B. The Vgen waveform is supplied by a generator with the following characteristics: ty < 15 ns, te < 15ns, Zout = 502, ty = 20ns, duty cycle < 2%. . Waveforms are monitored on an oscilloscope with the following characteristics: tp < 151s, Rin = 10 MQ, Cin < 11.5 pF. . Resistors must be noninductive types. . . . The d-e power supplies may require additional bypassing in order to minimize ringing. moo FIGURE 1. RESISTIVE-LOAD SWITCHING Q 2 5 o a > > a x = a > i Pd a rs] S Qa a Qa co i Texas 4% ms INSTRUMENTS 3-23 POST OFFICE BOX 225012 DALLAS, TEXAS 78265 TEXAS INSTR {fO0PTO}F 8967726 TEXAS INSTR COPTO) BDX53, BDX53A, BDX538, BDX53C N-P-N SILICON POWER DARLINGTONS Le DE ff atb1726 O03bb20 4 I 62C 36620 T-33-29 TYPICAL CHARACTERISTICS STATIC FORWARD CURRENT TRANSFER RATIO vs COLLECTOR CURRENT 10k 4k 1k 400 VcE=3V, See Notes 3 and 4 heg Static Forward Current Transfer Ratio 04 1 4 {oc Collector Current A FIGURE 2 10 COLLECTOR-EMITTER SATURATION VOLTAGE BASE-EMITTER VOLTAGE vs CASE TEMPERATURE & te 28 VcE=3V >~ See Notes 3 and 4 | 224 z Ss 2 1.6 ui 2142 a I tu 08 > 0.4 0 -75 -25 0 25 75 125 176 Tc Case Temperature C FIGURE 3 SMALL SIGNAL COMMON-EMITTER w Oo *. wo o = vs FORWARD CURRENT TRANSFER RATIO . > CASE TEMPERATURE vs w log FREQUENCY Oo 2 Notes 3 and 4 240 x 3 1 | J : Vce = 10V > =20mA,1I=5A = ic=1A ow e 2 Cc . C g Te=25 C Ss - = = = wm 4! E 50 Z & ip=12mA,Ic=3A E 5 0.4 o e & a 2 - = eo - =< 3 =2m4,I=1A 5 \~ 2 @ z < & a oo | @ > -75 -25 0 25 78 125 _ 175 2 1 av Tc Case Temperature C 1 4 10 f Frequency MHz FIGURE 4 FIGURE 5 NOTES: 3. These parameters must be measured using pulse techniques, ty = 300 us, duty cycle < 2%. . 4. These parameters are measured with voltage-sensing contacts separate from the current-carrying contacts and located within 3,2 mm (0.125 inch) from the device body. . ; wy 3-24 EXAS INSTRUMENTS POST OFFICE BOX 225012 @ DALLAS, TEXAS 78265 eae 30820 DY TEXAS INSTR fOPTO} a r BS61726 TEXAS INSTR COPTO) be DEG) sse1726 Ooze O a: 626 36621- BDX53, BDXS3A, BDX53B, BDX53C N-P-N SILICON POWER DARLINGTONS T-33-29 D : MAXIMUM SAFE OPERATING AREA MAXIMUM COLLECTOR CURRENT vs COLLECTOR-EMITTER VOLTAGE 10 4{d-c ty = 300 us, d=0.1 = 10% BDX53 BDX53A BDX53B BDX53C 0.4 I Maximum Collector Current A 0.1 4 10 40 FIGURE 6 inductive load. VcE Collector-Emitter Voltage Vv NOTE 5: This combination of maximum voltage and current may be achieved only when switching from saturation to cutoff with a clamped To <28C See Note 5 100 400 CASE TEMPERATURE DISSIPATION DERATING CURVE 8 N a ~l 5S Royo 2.08" C/W a a N 8s $s 68 8 8 0.5 = Maximum Continuous Device Dissipation W Maximum Continuous Device Dissipation ~W o THERMAL INFORMATION FREE-AIR TEMPERATURE DISSIPATION DERATING CURVE Resa <625CW ~ Pe a , n o 2 > @ a > > fa) x > ca > oO x a a = a a a a 0 "o 2 80 75 100 126 150 & 0 2 80 75 100 126 150 Tc Case Temperature C Ta Free-Air Temperature C FIGURE 7 FIGURE 8 i i i 1283 TEXAS ei 3-25 INSTRUMENTS POST OFFICE BOX 225012 DALLAS, TEXAS 75265 pec egypt epee ree eet a