© Semiconductor Components Industries, LLC, 2013
March, 2019 Rev. 9
1Publication Order Number:
2N7002L/D
2N7002L, 2V7002L
Small Signal MOSFET
60 V, 115 mA, NChannel SOT23
Features
2V Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AECQ101 Qualified and
PPAP Capable (2V7002L)
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating Symbol Value Unit
DrainSource Voltage VDSS 60 Vdc
DrainGate Voltage (RGS = 1.0 MW)VDGR 60 Vdc
Drain Current
Continuous TC = 25°C (Note 1)
Continuous TC = 100°C (Note 1)
Pulsed (Note 2)
ID
ID
IDM
±115
±75
±800
mAdc
GateSource Voltage
Continuous
Nonrepetitive (tp 50 ms)
VGS
VGSM
±20
±40
Vdc
Vpk
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR5 Board
(Note 3) TA = 25°C
Derate above 25°C
Thermal Resistance, JunctiontoAmbient
PD
RqJA
225
1.8
556
mW
mW/°C
°C/W
Total Device Dissipation
(Note 4) Alumina Substrate, TA = 25°C
Derate above 25°C
Thermal Resistance, JunctiontoAmbient
PD
RqJA
300
2.4
417
mW
mW/°C
°C/W
Junction and Storage Temperature TJ, Tstg 55 to
+150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. The Power Dissipation of the package may result in a lower continuous drain
current.
2. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
3. FR5 = 1.0 x 0.75 x 0.062 in.
4. Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina.
3
1
2
Device Package Shipping
ORDERING INFORMATION
2N7002LT1G
SOT23
(PbFree)
3,000 Tape & Reel
NChannel
SOT23
CASE 318
STYLE 21
MARKING
DIAGRAM
2
1
3
2N7002LT3G 10,000 Tape & Reel
www.onsemi.com
2V7002LT1G
SOT23
(PbFree)
3,000 Tape & Reel
2V7002LT3G 10,000 Tape & Reel
60 V 7.5 W @ 10 V,
500 mA
RDS(on) MAX
115 mA
ID MAXV(BR)DSS
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*Not for new design.
1
702 MG
G
(Note: Microdot may be in either location)
*Date Code orientation and/or position may
vary depending upon manufacturing location.
702 = Device Code
M = Date Code*
G= PbFree Package
2N7002LT1H* 3,000 Tape & Reel
2N7002LT7G 3,500 Tape & Reel
2N7002LT7H* 3,500 Tape & Reel
2N7002L, 2V7002L
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
DrainSource Breakdown Voltage
(VGS = 0, ID = 10 mAdc)
V(BR)DSS 60 Vdc
Zero Gate Voltage Drain Current TJ = 25°C
(VGS = 0, VDS = 60 Vdc) TJ = 125°C
IDSS
1.0
500
mAdc
GateBody Leakage Current, Forward
(VGS = 20 Vdc)
IGSSF 100 nAdc
GateBody Leakage Current, Reverse
(VGS = 20 Vdc)
IGSSR 100 nAdc
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
(VDS = VGS, ID = 250 mAdc)
VGS(th) 1.0 2.5 Vdc
OnState Drain Current
(VDS 2.0 VDS(on), VGS = 10 Vdc)
ID(on) 500 mA
Static DrainSource OnState Voltage
(VGS = 10 Vdc, ID = 500 mAdc)
(VGS = 5.0 Vdc, ID = 50 mAdc)
VDS(on)
3.75
0.375
Vdc
Static DrainSource OnState Resistance
(VGS = 10 V, ID = 500 mAdc) TC = 25°C
TC = 125°C
(VGS = 5.0 Vdc, ID = 50 mAdc) TC = 25°C
TC = 125°C
rDS(on)
7.5
13.5
7.5
13.5
Ohms
Forward Transconductance
(VDS 2.0 VDS(on), ID = 200 mAdc)
gFS 80 mS
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Ciss 50 pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Coss 25 pF
Reverse Transfer Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Crss 5.0 pF
SWITCHING CHARACTERISTICS (Note 5)
TurnOn Delay Time (VDD = 25 Vdc, ID ^ 500 mAdc,
RG = 25 W, RL = 50 W, Vgen = 10 V)
td(on) 20 ns
TurnOff Delay Time td(off) 40 ns
BODYDRAIN DIODE RATINGS
Diode Forward OnVoltage
(IS = 11.5 mAdc, VGS = 0 V)
VSD 1.5 Vdc
Source Current Continuous
(Body Diode)
IS 115 mAdc
Source Current Pulsed ISM 800 mAdc
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
2N7002L, 2V7002L
www.onsemi.com
3
TYPICAL ELECTRICAL CHARACTERISTICS
ID, DRAIN CURRENT (AMPS)
rDS(on), STATIC DRAIN-SOURCE ON-RESISTANCE
(NORMALIZED)
VGS(th), THRESHOLD VOLTAGE (NORMALIZED) ID, DRAIN CURRENT (AMPS)
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0100 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0
VDS, DRAIN SOURCE VOLTAGE (VOLTS)
Figure 1. Ohmic Region
1.0
0.8
0.6
0.4
0.2
100 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0
VGS, GATE SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
1.2
1.05
1.1
1.10
1.0
0.95
0.9
0.85
0.8
0.75
0.7
-60 -20 +20 +60 +100 +140 -60 -20 +20 +60 +100 +140
T, TEMPERATURE (°C)
Figure 3. Temperature versus Static
DrainSource OnResistance
T, TEMPERATURE (°C)
Figure 4. Temperature versus Gate
Threshold Voltage
TA = 25°C
VGS = 10 V
9 V
8 V
7 V
6 V
4 V
3 V
5 V
VDS = 10 V -55°C25°C
125°C
VGS = 10 V
ID = 200 mA
VDS = VGS
ID = 1.0 mA
2N7002L, 2V7002L
www.onsemi.com
4
PACKAGE DIMENSIONS
SOT23 (TO236)
CASE 31808
ISSUE AS
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
D
A1
3
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
VIEW C
L
0.25
L1
e
EE
b
A
SEE VIEW C
DIM
A
MIN NOM MAX MIN
MILLIMETERS
0.89 1.00 1.11 0.035
INCHES
A1 0.01 0.06 0.10 0.000
b0.37 0.44 0.50 0.015
c0.08 0.14 0.20 0.003
D2.80 2.90 3.04 0.110
E1.20 1.30 1.40 0.047
e1.78 1.90 2.04 0.070
L0.30 0.43 0.55 0.012
0.039 0.044
0.002 0.004
0.017 0.020
0.006 0.008
0.114 0.120
0.051 0.055
0.075 0.080
0.017 0.022
NOM MAX
L1
H
2.10 2.40 2.64 0.083 0.094 0.104
HE
0.35 0.54 0.69 0.014 0.021 0.027
c
0−−− 10 0 −−− 10
T°°°°
T
3X
TOP VIEW
SIDE VIEW
END VIEW
SOLDERING FOOTPRINT
2.90
0.80
DIMENSIONS: MILLIMETERS
0.90
PITCH
3X
3X 0.95
RECOMMENDED
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/PatentMarking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
N. American Technical Support: 8002829855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
2N7002L/D
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA
Phone: 3036752175 or 8003443860 Toll Free USA/Canada
Fax: 3036752176 or 8003443867 Toll Free USA/Canada
Email: orderlit@onsemi.com
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative