2N7002L, 2V7002L Small Signal MOSFET 60 V, 115 mA, N-Channel SOT-23 Features * 2V Prefix for Automotive and Other Applications Requiring Unique * Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable (2V7002L) These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant www.onsemi.com V(BR)DSS RDS(on) MAX ID MAX 60 V 7.5 W @ 10 V, 500 mA 115 mA MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDSS 60 Vdc Drain-Gate Voltage (RGS = 1.0 MW) VDGR 60 Vdc ID ID mAdc IDM 115 75 800 VGS VGSM 20 40 Vdc Vpk Characteristic Symbol Max Unit Total Device Dissipation FR-5 Board (Note 3) TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient PD Drain Current - Continuous TC = 25C (Note 1) - Continuous TC = 100C (Note 1) - Pulsed (Note 2) Gate-Source Voltage - Continuous - Non-repetitive (tp 50 ms) N-Channel 3 1 2 MARKING DIAGRAM 3 THERMAL CHARACTERISTICS Total Device Dissipation (Note 4) Alumina Substrate, TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Junction and Storage Temperature RqJA PD RqJA TJ, Tstg 225 1.8 556 mW mW/C C/W 300 2.4 417 mW mW/C C/W -55 to +150 C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The Power Dissipation of the package may result in a lower continuous drain current. 2. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%. 3. FR-5 = 1.0 x 0.75 x 0.062 in. 4. Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina. 1 702 MG G 2 SOT-23 CASE 318 STYLE 21 1 702 = Device Code M = Date Code* G = Pb-Free Package (Note: Microdot may be in either location) *Date Code orientation and/or position may vary depending upon manufacturing location. ORDERING INFORMATION Device Package 2N7002LT1G 2N7002LT3G Shipping 3,000 Tape & Reel SOT-23 (Pb-Free) 10,000 Tape & Reel 2N7002LT7G 3,500 Tape & Reel 2V7002LT1G 3,000 Tape & Reel 2V7002LT3G 2N7002LT1H* 2N7002LT7H* SOT-23 (Pb-Free) 10,000 Tape & Reel 3,000 Tape & Reel 3,500 Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *Not for new design. (c) Semiconductor Components Industries, LLC, 2013 March, 2019 - Rev. 9 1 Publication Order Number: 2N7002L/D 2N7002L, 2V7002L ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Symbol Min Typ Max Unit V(BR)DSS 60 - - Vdc IDSS - - - - 1.0 500 mAdc Gate-Body Leakage Current, Forward (VGS = 20 Vdc) IGSSF - - 100 nAdc Gate-Body Leakage Current, Reverse (VGS = -20 Vdc) IGSSR - - -100 nAdc VGS(th) 1.0 - 2.5 Vdc On-State Drain Current (VDS 2.0 VDS(on), VGS = 10 Vdc) ID(on) 500 - - mA Static Drain-Source On-State Voltage (VGS = 10 Vdc, ID = 500 mAdc) (VGS = 5.0 Vdc, ID = 50 mAdc) VDS(on) - - - - 3.75 0.375 - - - - - - - - 7.5 13.5 7.5 13.5 gFS 80 - - mS Input Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Ciss - - 50 pF Output Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Coss - - 25 pF Reverse Transfer Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Crss - - 5.0 pF td(on) - - 20 ns td(off) - - 40 ns VSD - - -1.5 Vdc IS - - -115 mAdc ISM - - -800 mAdc Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VGS = 0, ID = 10 mAdc) Zero Gate Voltage Drain Current (VGS = 0, VDS = 60 Vdc) TJ = 25C TJ = 125C ON CHARACTERISTICS (Note 5) Gate Threshold Voltage (VDS = VGS, ID = 250 mAdc) Static Drain-Source On-State Resistance (VGS = 10 V, ID = 500 mAdc) (VGS = 5.0 Vdc, ID = 50 mAdc) TC = 25C TC = 125C TC = 25C TC = 125C Forward Transconductance (VDS 2.0 VDS(on), ID = 200 mAdc) rDS(on) Vdc Ohms DYNAMIC CHARACTERISTICS SWITCHING CHARACTERISTICS (Note 5) Turn-On Delay Time Turn-Off Delay Time (VDD = 25 Vdc, ID ^ 500 mAdc, RG = 25 W, RL = 50 W, Vgen = 10 V) BODY-DRAIN DIODE RATINGS Diode Forward On-Voltage (IS = 11.5 mAdc, VGS = 0 V) Source Current Continuous (Body Diode) Source Current Pulsed Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%. www.onsemi.com 2 2N7002L, 2V7002L TYPICAL ELECTRICAL CHARACTERISTICS 2.0 1.0 VDS = 10 V TA = 25C 1.6 VGS = 10 V 1.4 9V 1.2 I D, DRAIN CURRENT (AMPS) I D, DRAIN CURRENT (AMPS) 1.8 8V 1.0 7V 0.8 6V 0.6 0.4 5V 0.2 4V 3V 0 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 VDS, DRAIN SOURCE VOLTAGE (VOLTS) 9.0 0.8 125C 0.6 0.4 0.2 10 0 2.4 2.2 1.8 VGS = 10 V ID = 200 mA 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -60 -20 +20 +60 T, TEMPERATURE (C) 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 VGS, GATE SOURCE VOLTAGE (VOLTS) 9.0 10 Figure 2. Transfer Characteristics VGS(th) , THRESHOLD VOLTAGE (NORMALIZED) r DS(on) , STATIC DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) Figure 1. Ohmic Region 2.0 25C -55C +100 +140 1.2 1.05 VDS = VGS ID = 1.0 mA 1.1 1.10 1.0 0.95 0.9 0.85 0.8 0.75 0.7 -60 Figure 3. Temperature versus Static Drain-Source On-Resistance -20 +20 +60 T, TEMPERATURE (C) +100 Figure 4. Temperature versus Gate Threshold Voltage www.onsemi.com 3 +140 2N7002L, 2V7002L PACKAGE DIMENSIONS SOT-23 (TO-236) CASE 318-08 ISSUE AS D 0.25 3 E 1 2 T HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF THE BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. DIM A A1 b c D E e L L1 HE T L 3X b L1 VIEW C e TOP VIEW A A1 SIDE VIEW c SEE VIEW C MIN 0.89 0.01 0.37 0.08 2.80 1.20 1.78 0.30 0.35 2.10 0 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.14 0.20 2.90 3.04 1.30 1.40 1.90 2.04 0.43 0.55 0.54 0.69 2.40 2.64 --- 10 MIN 0.035 0.000 0.015 0.003 0.110 0.047 0.070 0.012 0.014 0.083 0 INCHES NOM 0.039 0.002 0.017 0.006 0.114 0.051 0.075 0.017 0.021 0.094 --- MAX 0.044 0.004 0.020 0.008 0.120 0.055 0.080 0.022 0.027 0.104 10 STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN END VIEW RECOMMENDED SOLDERING FOOTPRINT 3X 2.90 3X 0.90 0.95 PITCH 0.80 DIMENSIONS: MILLIMETERS ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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