N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVN4206AV ISSUE 3 - APRIL 1998 FEATURES * 60 Volt VDS * RDS(on)= 1 * Repetitive avalanche rating * No transient protection required * Characterised for 5V logic drive APPLICATIONS * Automotive relay drivers * Stepper motor driver D G S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage V DS VALUE 60 UNIT V Continuous Drain Current at T amb=25C ID 600 mA A Pulsed Drain Current I DM 8 Gate-Source Voltage V GS 20 V Power Dissipation at T amb=25C P tot 700 mW Continuous Body Diode Current at T amb =25C I SD 600 mA Avalanche Current - Repetitive I AR 600 mA Avalanche Energy - Repetitive E AR 15 mJ Operating and Storage Temperature Range T j:T stg -55 to +150 C ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER SYMBOL MIN. Drain-Source Breakdown Voltage BV DSS 60 Gate-Source Threshold Voltage V GS(th) 1.3 MAX. UNIT CONDITIONS. V I D=1mA, V GS=0V 3 V I D =1mA, V DS= V GS Gate-Body Leakage I GSS 100 nA V GS= 20V, V DS=0V Zero Gate Voltage Drain Current I DSS 10 100 A A V DS=60V, V GS=0 V DS=48V, V GS=0V, T=125C (2) On-State Drain Current(1) I D(on) Static Drain-Source On-State Resistance (1) R DS(on) Forward Transconductance(1)(2) g fs 3 A V DS=25V, V GS=10V 1 1.5 V GS=10V,I D=1.5A V GS=5V,I D=.0.5A mS V DS=25V,I D=1.5A 300 Input Capacitance (2) C iss 100 pF Common Source Output Capacitance (2) C oss 60 pF Reverse Transfer Capacitance (2) Crss 20 pF Turn-On Delay Time (2)(3) t d(on) 8 ns Rise Time (2)(3) tr 12 ns Turn-Off Delay Time (2)(3) t d(off) 12 ns Fall Time (2)(3) tf 15 ns V DS=25V, V GS=0V, f=1MHz V DD 25V, I D=1.5A,V GEN=10V (1) Measured under pulsed conditions. Width=300s. Duty cycle 2% (2) Sample test. (3) Switching times measured with 50 source impedance and <5ns rise time on a pulse generator ZVN4206AV TYPICAL CHARACTERISTICS 10 VGS= 20V 16V 14V 12V 8 6 10V 9V 8V 4 7V 6V 2 5V 4.5V 4V 3.5V 50 0 10 20 30 40 6 4 7V 6V 5V 4.5V 4V 3.5V 10 2 0 4 6 8 VDS - Drain Source Voltage (Volts) VDS - Drain Source Voltage (Volts) Output Characteristics Saturation Characteristics 10 8 6 4 ID= 3A 1.5A 0.5A 2 2 4 6 8 VDS=10V 4 2 0 0 0 6 0 10 VGS-Gate Source Voltage (Volts) VGS=3.5V 4.5V 6V 6 8 10 8V 10V 2.6 14V 1.0 20V 20V 0.1 0.1 4 VGS-Gate Source Voltage (Volts) 1.0 ID-Drain Current (Amps) On-resistance v drain current Normalised RDS(on) and VGS(th) 10 2 Transfer Characteristics Voltage Saturation Characteristics RDS(on)-Drain Source On Resistance () 10V 9V 8V 2 ID - Drain Current (Amps) VDS-Drain Source Voltage (Volts) 0 VGS= 20V 16V 14V 12V 8 ID - Drain Current (Amps) ID - Drain Current (Amps) 10 2.4 VGS=10V ID=1.5A 2.2 n) (o 2.0 DS 1.8 1.6 1.4 1.2 Dr 1.0 0.8 0.6 Re ce ur So ain eR nc ta sis VGS=VDS ID=1mA Gate Threshold Voltage VGS(TH) -50 -25 0 25 50 75 100 125 150 175 200 225 10 Tj-Junction Temperature (C) Normalised RDS(on) and VGS(th) v Temperature ZVN4206AV 1000 1000 900 800 900 800 700 600 gfs-Transconductance (mS) gfs-Transconductance (mS) TYPICAL CHARACTERISTICS VDS=10V 500 400 300 200 100 0 0 1 2 3 4 5 6 7 8 9 700 600 400 300 200 100 0 10 0 Transconductance v drain current 2 3 120 80 Ciss 40 Coss Crss 0 20 30 40 50 60 70 80 VGS-Gate Source Voltage (Volts) 160 10 5 6 7 8 9 10 VDS= 20V 40V 60V 16 0 4 Transconductance v gate-source voltage 200 C-Capacitance (pF) 1 VGS-Gate Source Voltage (Volts) ID- Drain Current (Amps) VDS-Drain Source Voltage (Volts) 14 ID=1.5A 12 10 8 6 4 2 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 Q-Charge (nC) Gate charge v gate-source voltage IAR- Repetative Avalance Current (A) Capacitance v drain-source voltage EAR- Repetative Avalance Energy (mJ) VDS=10V 500 Tj - Junction Temperature (C) Maximum repetative avalanche energy v Junction Temperature Tj - Junction Temperature (C) Maximum repetative avalanche current v Junction Temperature