1
MRF10120MOTOROLA RF DEVICE DATA
The RF Line
  
 
Designed for 960–1215 MHz long pulse common base amplifier applications
such as JTIDS and Mode S transmitters.
Guaranteed Performance @ 1.215 GHz, 36 Vdc
Output Power = 120 Watts Peak
Gain = 8.0 dB Min., 9.2 dB (Typ)
100% Tested for Load Mismatch at All Phase Angles with 3:1 VSWR
Hermetically Sealed Industry Standard Package
Silicon Nitride Passivated
Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal
Migration
Internal Input and Output Matching for Broadband Operation
Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage VCES 55 Vdc
Collector–Base Voltage VCBO 55 Vdc
Emitter–Base Voltage VEBO 3.5 Vdc
Collector Current — Peak (1) IC15 Adc
Total Device Dissipation @ TC = 25°C (1), (2)
Derate above 25°CPD380
2.17 Watts
W/°C
Storage Temperature Range Tstg –65 to +200 °C
Junction Temperature TJ200
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case (3) RθJC 0.46 °C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 60 mAdc, VBE = 0) V(BR)CES 55 Vdc
Collector–Base Breakdown Voltage (IC = 60 mAdc, IE = 0) V(BR)CBO 55 Vdc
Emitter–Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO 3.5 Vdc
Collector Cutoff Current (VCB = 36 Vdc, IE = 0) ICBO 25 mAdc
NOTES: (continued)
1. Under pulse RF operating conditions.
2. These devices are designed for RF operation. The total device dissipation rating applies only when the device is operated as RF amplifiers.
3. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques.
Order this document
by MRF10120/D

SEMICONDUCTOR TECHNICAL DATA

120 W (PEAK), 960–1215 MHz
MICROWAVE POWER
TRANSISTOR
NPN SILICON
CASE 355C–02, STYLE 1
Motorola, Inc. 1995
REV 7
MRF10120
2MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS
DC Current Gain (IC = 5.0 Adc, VCE = 5.0 Vdc) hFE 20
FUNCTIONAL TESTS (7.0 µs Pulses @ 54% duty cycle for 3.4 ms; then off for 4.5 ms; overall duty cycle = 23%)
Common–Base Amplifier Power Gain
(VCC = 36 Vdc, Pout = 120 W Peak, f = 1215 MHz) GPB 8.0 9.2 dB
Collector Efficiency
(VCC = 36 Vdc, Pout = 120 W Peak, f = 1215 MHz) η50 55 %
Load Mismatch
(VCC = 36 Vdc, Pout = 120 W Peak, f = 1215 MHz,
VSWR = 3:1 All Phase Angles)
ψNo Degradation in Output Power
Figure 1. Test Circuit
Z1–Z9 — Microstrip, See Details
Board Material — Teflon/Glass Laminate,
Dielectric Thickness = 0.030,
εr = 2.55, 2 Oz. Copper
C1 — 270 pF 100 Mil Chip Capacitor
C2 — 220 pF 100 Mil Chip Capacitor
C3 — 0.1 µF
C4 — 47 µF 50 V Electrolytic
L1 — 3 Turns #18 AWG, 1/8 ID, 0.18 Long
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3
MRF10120MOTOROLA RF DEVICE DATA
Figure 2. Output Power versus Input Power Figure 3. Output Power versus Input Power
Figure 4. Series Equivalent Input Impedances Figure 5. Series Equivalent Output Impedance
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MRF10120
4MOTOROLA RF DEVICE DATA
PACKAGE DIMENSIONS
CASE 355C–02
ISSUE C

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 
E
J
H
N
C
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
–T–
D
M
U
R
–A–
–B–
Q2 PL
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K
2 PL
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MRF10120/D
