Order this document by MRF10120/D SEMICONDUCTOR TECHNICAL DATA The RF Line Designed for 960-1215 MHz long pulse common base amplifier applications such as JTIDS and Mode S transmitters. * Guaranteed Performance @ 1.215 GHz, 36 Vdc Output Power = 120 Watts Peak Gain = 8.0 dB Min., 9.2 dB (Typ) 120 W (PEAK), 960-1215 MHz MICROWAVE POWER TRANSISTOR NPN SILICON * 100% Tested for Load Mismatch at All Phase Angles with 3:1 VSWR * Hermetically Sealed Industry Standard Package * Silicon Nitride Passivated * Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration * Internal Input and Output Matching for Broadband Operation * Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ. CASE 355C-02, STYLE 1 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCES 55 Vdc Collector-Base Voltage VCBO 55 Vdc Emitter-Base Voltage VEBO 3.5 Vdc Collector Current -- Peak (1) IC 15 Adc Total Device Dissipation @ TC = 25C (1), (2) Derate above 25C PD 380 2.17 Watts W/C Storage Temperature Range Tstg -65 to +200 C Junction Temperature TJ 200 Symbol Max Unit RJC 0.46 C/W THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case (3) ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit Collector-Emitter Breakdown Voltage (IC = 60 mAdc, VBE = 0) V(BR)CES 55 -- -- Vdc Collector-Base Breakdown Voltage (IC = 60 mAdc, IE = 0) V(BR)CBO 55 -- -- Vdc Emitter-Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO 3.5 -- -- Vdc ICBO -- -- 25 mAdc OFF CHARACTERISTICS Collector Cutoff Current (VCB = 36 Vdc, IE = 0) NOTES: (continued) 1. Under pulse RF operating conditions. 2. These devices are designed for RF operation. The total device dissipation rating applies only when the device is operated as RF amplifiers. 3. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques. REV 7 RF DEVICE DATA MOTOROLA Motorola, Inc. 1995 MRF10120 1 ELECTRICAL CHARACTERISTICS -- continued (TC = 25C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit hFE 20 -- -- -- ON CHARACTERISTICS DC Current Gain (IC = 5.0 Adc, VCE = 5.0 Vdc) FUNCTIONAL TESTS (7.0 s Pulses @ 54% duty cycle for 3.4 ms; then off for 4.5 ms; overall duty cycle = 23%) Common-Base Amplifier Power Gain (VCC = 36 Vdc, Pout = 120 W Peak, f = 1215 MHz) GPB 8.0 9.2 -- dB Collector Efficiency (VCC = 36 Vdc, Pout = 120 W Peak, f = 1215 MHz) 50 55 -- % Load Mismatch (VCC = 36 Vdc, Pout = 120 W Peak, f = 1215 MHz, VSWR = 3:1 All Phase Angles) No Degradation in Output Power * '-, &% # "&% * * * * * * * # !&%"&% * C1 -- 270 pF 100 Mil Chip Capacitor C2 -- 220 pF 100 Mil Chip Capacitor C3 -- 0.1 F C4 -- 47 F 50 V Electrolytic L1 -- 3 Turns #18 AWG, 1/8 ID, 0.18 Long Z1-Z9 -- Microstrip, See Details Board Material -- Teflon/Glass Laminate, Dielectric Thickness = 0.030, r = 2.55, 2 Oz. Copper $! $ $ Figure 1. Test Circuit MRF10120 2 MOTOROLA RF DEVICE DATA "!&%"&%"!(#(%%$94 8>= "!&%"&%"!(#(%%$94 8>= / B ' ' / B ' ' "27 "&% "!(# (%%$ 94 "27 "&% "!(# (%%$ 94 Figure 2. Output Power versus Input Power Figure 3. Output Power versus Input Power / B ' ' "8>= ( / B ' ' "8>= ( / B *27 !$ / B *! !$ C 3 3 3 3 3 C 3 C 3 3 3 3 *! 873>0+=. 8/ =1. 89=26>6 58+- 269.-+7,. 27=8 @12,1 =1. -.?2,. 8>=D 9>= 89.;+=.< += + 02?.7 8>=9>= 98@.; ?85=+0. +7- /;.:>.7,A Figure 4. Series Equivalent Input Impedances MOTOROLA RF DEVICE DATA Figure 5. Series Equivalent Output Impedance MRF10120 3 PACKAGE DIMENSIONS !%$ $! %!# "# $ ) ! %#! $! -A- M U Q 2 PL % R -B- K 2 PL D J N E # $ # $ $%) " !%!# %%# $ C H -T- CASE 355C-02 ISSUE C Motorola reserves the right to make changes without further notice to any products herein. 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Box 20912; Phoenix, Arizona 85036. 1-800-441-2447 JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-3521-8315 MFAX: RMFAX0@email.sps.mot.com - TOUCHTONE (602) 244-6609 INTERNET: http://Design-NET.com HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 MRF10120 4 MRF10120/D MOTOROLA RF DEVICE DATA