Feb-27-2004
1
BG3130...
VPS05604
6
3
1
54
2
DUAL N-Channel MOSFET Tetrode
• Two gain controlled input stage for UHF
and VHF -tuners e.g. (NTSC, PAL)
• Two AGC amplifiers in one single package
• Integrated gate protection diodes
• High AGC-range, low noise figure, high gain
• Improved cross modulation at gain reduction
BG3130 BG3130R
EHA07461
GND
G1
G2
Drain
AGC
HF
Input
HF Output
+DC
GG
V
G1
R
A
B
4
56
1 2 3 1 2 3
4
56
A
B
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Package Pin Configuration Marking
BG3130
BG3130R
SOT363
SOT363
1=G1
1=G1
2=G2
2=S
3=D
3=D
4=D
4=D
5=S
5=G2
6=G1
6=G1
KAs
KHs
180° rotated tape loading orientation available
Maximum Ratings
Parameter Symbol Value Unit
Drain-source voltage VDS 8 V
Continuous drain current ID25 mA
Gate 1/ gate 2-source current ±IG1/2SM 1
Gate 1/ gate 2-source voltage ±VG1/G2S 6 V
Total power dissipation Ptot 200 mW
Storage temperature Tstg -55 ... 150 °C
Channel temperature Tch 150
Thermal Resistance
Parameter Symbol Value Unit
Channel - soldering point1) Rthchs ≤ 280 K/W
1For calculation of RthJA please refer to Application Note Thermal Resistance
Feb-27-2004
2
BG3130...
Electrical Characteristics
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Drain-source breakdown voltage
ID = 10 µA, VG1S = 0 V, VG2S = 0 V
V(BR)DS 12 - - V
Gate1-source breakdown voltage
+IG1S = 10 mA, VG2S = 0 V, VDS = 0 V
+V(BR)G1SS 6 - 15
Gate2-source breakdown voltage
+IG2S = 10 mA, VG1S = 0 V, VDS = 0 V
+V(BR)G2SS 6 - 15
Gate1-source leakage current
VG1S = 6 V, VG2S = 0 V
+IG1SS - - 50 µA
Gate2-source leakage current
VG2S = 8 V, VG1S = 0 V, VDS = 0 V
+IG2SS - - 50 nA
Drain current
VDS = 5 V, VG1S = 0 V, VG2S = 4.5 V
IDSS - - 10 µA
Drain-source current
VDS = 5 V, VG2S = 4 V, RG1 = 120 kΩ
IDSX - 10 - mA
Gate1-source pinch-off voltage
VDS = 5 V, VG2S = 4 V, ID = 20 µA
VG1S(p) - 0.7 - V
Gate2-source pinch-off voltage
VDS = 5 V, ID = 20 µA
VG2S(p) - 0.6 -
Feb-27-2004
3
BG3130...
Electrical Characteristics
Parameter Symbol Values Unit
min. typ. max.
AC Characteristics VDS = 5V, VG2S = 4V, (ID = 14 mA) (verified by random sampling)
Forward transconductance gfs - 33 - mS
Gate1 input capacitance
f = 10 MHz
Cg1ss - 1.9 - pF
Output capacitance
f = 10 MHz
Cdss - 1.1 -
Power gain
f = 800 MHz
f = 45 MHz
Gp
-
-
24
31
-
-
dB
Noise figure
f = 800 MHz
f = 45 MHz
F
-
-
1.3
1.7
-
-
dB
Gain control range
VG2S = 4 ... 0 V, f = 800 MHz
∆Gp45 - -
Cross-modulation k=1%, fw=50MHz, funw=60MHz
AGC = 0 dB
AGC = 10 dB
AGC = 40 dB
Xmod
90
-
96
-
87
100
-
-
-
-
Feb-27-2004
4
BG3130...
Total power dissipation Ptot = ƒ(TS)
amp. A = amp. B
0 20 40 60 80 100 120 °C 150
TS
0
50
100
150
200
mW
300
Ptot
Drain current ID = ƒ(IG1)
VG2S = 4V
amp. A = amp. B
0 10 20 30 40 50 60 70 80 µA 100
IG1
0
5
10
15
20
mA
30
ID
Output characteristics ID = ƒ(VDS)
amp. A = amp. B
0 2 4 6 8 10 V14
VDS
0
2
4
6
8
10
12
14
16
18
mA
22
ID
1.3V
1.2V
1.1V
1V
0.8V
Gate 1 current IG1 = ƒ(VG1S)
VDS = 5V, VG2S = Parameter
amp. A = amp. B
0 0.4 0.8 1.2 1.6 2 2.4 V3.2
IG1
0
25
50
75
100
125
150
175
µA
225
VG1S
4V
3.5V
3V
2.5V
2V
Feb-27-2004
5
BG3130...
Gate 1 forward transconductance
gfs = ƒ(ID), VDS = 5V, VG2S = Parameter
amp. A = amp. B
0 4 8 12 16 20 24 28 mA 36
ID
0
5
10
15
20
25
30
mS
40
gfs
2V
2.5V
3V
3.5V
4V
Drain current ID = ƒ(VG1S)
VDS = 5V, VG2S = Parameter
amp. A = amp. B
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 V2
VG1S
0
4
8
12
16
20
24
µA
32
ID
4V
3V
2.5V
2V
1.5V
Drain current ID = ƒ(VGG) amp.A=amp.B
VDS = 5V, VG2S = 4V, RG1 = 120kΩ
(connected to VGG, VGG=gate1 supply voltage)
0 0.5 1 1.5 2 2.5 3 3.5 4 V5
VGG
0
1
2
3
4
5
6
7
8
9
10
11
mA
13
ID
Drain current ID = ƒ(VGG)
VG2S = 4V, RG1 = Parameter in kΩ
amp. A = amp. B
012345V7
VGG=VD
S
0
2
4
6
8
10
12
14
16
18
mA
22
ID
120
100
80
70
Feb-27-2004
6
BG3130...
Crossmodulation Vunw = (AGC)
VDS = 5 V, Rg1 = 68 kΩ
0 10 20 30 dB 50
AGC
80
90
100
dBµV
120
Vunw
Cossmodulation test circuit
4n7
4n7
VGG
VAGC VDS
4n7
2.2 µH
R1
10 kOhm
RL
50 Ohm
RGEN
50 Ohm 50 Ohm RG1
4n7
