ON Semiconductor NPN BDX53B Plastic Medium-Power Complementary Silicon Transistors BDX53C PNP BDX54B . . . designed for general-purpose amplifier and low-speed switching applications. BDX54C * High DC Current Gain -- * * * * hFE = 2500 (Typ) @ IC = 4.0 Adc Collector Emitter Sustaining Voltage -- @ 100 mAdc VCEO(sus) = 80 Vdc (Min) -- BDX53B, 54B = 100 Vdc (Min) -- BDX53C, 54C Low Collector-Emitter Saturation Voltage -- VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc = 4.0 Vdc (Max) @ IC = 5.0 Adc Monolithic Construction with Built-In Base-Emitter Shunt Resistors TO-220AB Compact Package IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIII IIII IIIIIII III IIII IIII IIIIIIIIIIII IIII IIIIIII III IIIIIIIIIIII IIII IIIIIII III IIIIIIIIIIII IIII IIIIIII III IIIIIIIIIIII IIII IIIIIII III IIIIIIIIIIII IIII IIIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIII IIIIIII III IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIII IIIII IIIIII III DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 80-100 VOLTS 65 WATTS MAXIMUM RATINGS Rating Collector-Emitter Voltage Symbol BDX53B BDX54B BDX53C BDX54C Unit VCEO 80 100 Vdc Collector-Base Voltage VCB 80 100 Vdc Emitter-Base Voltage VEB 5.0 Vdc IC 8.0 12 Adc Base Current IB 0.2 Adc Total Device Dissipation @ TC = 25C Derate above 25C PD 60 0.48 Watts W/C TJ, Tstg -65 to +150 C Collector Current -- Continuous Peak Operating and Storage Junction Temperature Range CASE 221A-09 TO-220AB THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RJA 70 C/W Thermal Resistance, Junction to Case RJC 70 C/W Semiconductor Components Industries, LLC, 2001 March, 2001 - Rev. 9 1 Publication Order Number: BDX53B/D PD, POWER DISSIPATION (WATTS) BDX53B BDX53C BDX54B BDX54C TA 4.0 TC 80 3.0 60 TC 2.0 40 1.0 20 0 TA 0 20 40 60 80 100 120 T, TEMPERATURE (C) Figure 1. Power Derating http://onsemi.com 2 140 160 BDX53B BDX53C BDX54B BDX54C IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Max 80 100 -- -- -- -- 0.5 0.5 -- -- 0.2 0.2 750 -- -- -- 2.0 4.0 Unit OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (1) (IC = 100 mAdc, IB = 0) VCEO(sus) BDX53B, BDX54B BDX53C, BDX54C Collector Cutoff Current (VCE = 40 Vdc, IB = 0) (VCE = 50 Vdc, IB = 0) BDX53B, BDX54B BDX53C, BDX54C Collector Cutoff Current (VCB = 80 Vdc, IE = 0) (VCB = 100 Vdc, IE = 0) BDX53B, BDX54B BDX53C, BDX54C Vdc ICEO mAdc ICBO mAdc ON CHARACTERISTICS (1) DC Current Gain (IC = 3.0 Adc, VCE = 3.0 Vdc) hFE -- Collector-Emitter Saturation Voltage (IC = 3.0 Adc, IB = 12 mAdc) VCE(sat) Vdc Base-Emitter Saturation Voltage (IC = 3.0 Adc, IC = 12 mA) VBE(sat) -- 2.5 Vdc hfe 4.0 -- -- -- -- 300 200 DYNAMIC CHARACTERISTICS Small-Signal Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc, f = 1.0 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) Cob BDX53B, 53C BDX54B, 54C pF (1) Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 5.0 VCC -30 V RC 3.0 APPROX +8.0 V 0 51 V1 D1 8.0 k 120 -12 V 25 s tr, tf 10 ns DUTY CYCLE = 1.0% for td and tr, D1 is disconnected and V2 = 0 For NPN test circuit reverse all polarities tf 1.0 0.7 0.5 0.3 0.2 +4.0 V APPROX ts 2.0 SCOPE t, TIME (s) RB AND RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1 MUST BE FAST RECOVERY TYPES, e.g.: 1N5825 USED ABOVE IB 100 mA MSD6100 USED BELOW IB 100 mA TUT RB V2 0.1 0.07 0.05 0.1 Figure 2. Switching Time Test Circuit VCC = 30 V IC/IB = 250 IB1 = IB2 TJ = 25C 0.2 tr td @ VBE(off) = 0 V 0.5 0.7 1.0 2.0 3.0 0.3 IC, COLLECTOR CURRENT (AMP) Figure 3. Switching Times http://onsemi.com 3 5.0 7.0 10 r(t) EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) BDX53B BDX53C BDX54B BDX54C 1.0 0.7 0.5 D = 0.5 0.3 0.2 0.2 0.1 P(pk) 0.05 0.1 0.07 0.05 RJC(t) = r(t) RJC RJC = 1.92C/W 0.02 t1 0.03 SINGLE PULSE 0.01 0.02 0.01 0.01 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RJC(t) SINGLE PULSE t2 DUTY CYCLE, D = t1/t2 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 t, TIME OR PULSE WIDTH (ms) 20 30 50 100 200 300 500 1000 Figure 4. Thermal Response 20 IC, COLLECTOR CURRENT (AMP) 5.0 2.0 1.0 0.5 0.2 0.1 There are two limitations on the power handling ability of a transistor average junction temperature and second breakdown. Safe operating area curves indicate IC -VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on TJ(pk) = 150C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) 150C. TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 100 s 500 s 10 5.0 ms 1.0 ms dc TJ = 150C BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25C (SINGLE PULSE) SECOND BREAKDOWN LIMITED CURVES APPLY BELOW RATED VCEO 0.05 BDX53B, BDX54B BDX53C, BDX54C 0.02 1.0 20 30 2.0 3.0 5.0 7.0 10 50 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 70 100 Figure 5. Active-Region Safe Operating Area 300 TJ = + 25C 5000 3000 2000 200 C, CAPACITANCE (pF) hFE, SMALL-SIGNAL CURRENT GAIN 10,000 1000 500 300 200 TJ = 25C VCE = 3.0 V IC = 3.0 A 100 50 30 20 10 1.0 5.0 Cib 70 50 PNP NPN 2.0 Cob 100 10 20 50 100 f, FREQUENCY (kHz) 500 200 30 0.1 1000 Figure 6. Small-Signal Current Gain PNP NPN 0.2 1.0 2.0 5.0 10 20 0.5 VR, REVERSE VOLTAGE (VOLTS) Figure 7. Capacitance http://onsemi.com 4 50 100 BDX53B BDX53C BDX54B BDX54C NPN BDX53B, 53C PNP BDX54B, 54C 20,000 3000 2000 VCE = 4.0 V 10,000 hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN 10,000 5000 20,000 VCE = 4.0 V TJ = 150C 25C 1000 -55C 5000 TJ = 150C 3000 2000 25C 1000 -55C 500 500 300 200 0.1 300 200 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (AMP) 5.0 7.0 10 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (AMP) 5.0 7.0 10 3.0 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 8. DC Current Gain TJ = 25C 2.6 IC = 2.0 A 4.0 A 6.0 A 2.2 1.8 1.4 1.0 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IB, BASE CURRENT (mA) 20 30 3.0 TJ = 25C 2.6 IC = 2.0 A 4.0 A 6.0 A 2.2 1.8 1.4 1.0 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 IB, BASE CURRENT (mA) 10 20 30 Figure 9. Collector Saturation Region 3.0 3.0 TJ = 25C 2.5 V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) TJ = 25C 2.0 1.5 1.0 0.5 0.1 VBE(sat) @ IC/IB = 250 VBE @ VCE = 4.0 V VCE(sat) @ IC/IB = 250 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 2.5 2.0 1.5 VBE @ VCE = 4.0 V 1.0 VBE(sat) @ IC/IB = 250 0.5 10 VCE(sat) @ IC/IB = 250 0.1 0.2 0.3 IC, COLLECTOR CURRENT (AMP) 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (AMP) Figure 10. "On" Voltages http://onsemi.com 5 5.0 7.0 10 BDX53B BDX53C BDX54B BDX54C PNP BDX54B, BDX54C +5.0 +4.0 *IC/IB hFE/3 +3.0 25C to 150C +2.0 +1.0 -55C to 25C 0 *VC for VCE(sat) -1.0 -2.0 -3.0 25C to 150C VB for VBE -4.0 -5.0 V, TEMPERATURE COEFFICIENT (mV/ C) V, TEMPERATURE COEFFICIENT (mV/ C) NPN BDX53B, BDX53C 0.1 -55 to 150C 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 +5.0 +4.0 25C to 150C +2.0 +1.0 -55C to 25C 0 *VC for VCE(sat) -1.0 -2.0 -3.0 25C to 150C VB for VBE -4.0 -5.0 7.0 10 *IC/IB hFE/3 +3.0 0.1 -55 to 150C 0.2 0.3 IC, COLLECTOR CURRENT (AMP) 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (AMP) Figure 11. Temperature Coefficients 104 105 REVERSE FORWARD IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 105 VCE = 30 V 103 102 TJ = 150C 101 100C 100 25C 10-1 -0.6 -0.4 -0.2 0 +0.2 +0.4 +0.6 +0.8 104 103 VCE = 30 V 102 101 TJ = 150C 100C 100 10-1 +0.6 +0.4 +1.0 +1.2 + 1.4 FORWARD REVERSE 25C +0.2 VBE, BASEEMITTER VOLTAGE (VOLTS) 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 VBE, BASEEMITTER VOLTAGE (VOLTS) Figure 12. Collector Cut-Off Region COLLECTOR NPN BDX53B BDX53C PNP BDX54B BDX54C BASE COLLECTOR BASE 8.0 k 120 8.0 k EMITTER 120 EMITTER Figure 13. Darlington Schematic http://onsemi.com 6 BDX53B BDX53C BDX54B BDX54C PACKAGE DIMENSIONS TO-220AB CASE 221A-09 ISSUE AA -T- B SEATING PLANE C F T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q 1 2 3 U H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D N http://onsemi.com 7 INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 BDX53B BDX53C BDX54B BDX54C ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. 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