Semiconductor Group 109/96
BUZ 80 A
SIPMOS ® Power Transistor
• N channel
• Enhancement mode
• Avalanche-rated
Pin 1 Pin 2 Pin 3
GDS
Type VDS IDRDS(on)Package Ordering Code
BUZ 80 A 800 V 3.6 A 3
Ω
TO-220 AB C67078-S1309-A3
Maximum Ratings
Parameter Symbol Values Unit
Continuous drain current
TC = 26 °C
ID 3.6
A
Pulsed drain current
TC = 25 °C
IDpuls 14.5
Avalanche current,limited by Tjmax IAR 3.1
Avalanche energy,periodic limited by Tjmax EAR 8 mJ
Avalanche energy, single pulse
ID = 3.1 A, VDD = 50 V, RGS = 25
Ω
L = 62.4 mH, Tj = 25 °C
EAS
320
Gate source voltage VGS
±
20 V
Power dissipation
TC = 25 °C
Ptot 100
W
Operating temperature Tj -55 ... + 150 °C
Storage temperature Tstg -55 ... + 150
Thermal resistance, chip case RthJC
≤
1.25 K/W
Thermal resistance, chip to ambient RthJA 75
DIN humidity category, DIN 40 040 E
IEC climatic category, DIN IEC 68-1 55 / 150 / 56
Semiconductor Group 209/96
BUZ 80 A
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain- source breakdown voltage
VGS = 0 V, ID = 0.25 mA, Tj = 25 °C
V(BR)DSS 800 - -
V
Gate threshold voltage
VGS=VDS, ID = 1 mA
VGS(th) 2.1 3 4
Zero gate voltage drain current
VDS = 800 V, VGS = 0 V, Tj = 25 °C
VDS = 800 V, VGS = 0 V, Tj = 125 °C
IDSS
-
-
10
0.1
100
1
µA
Gate-source leakage current
VGS = 20 V, VDS = 0 V
IGSS - 10 100
nA
Drain-Source on-resistance
VGS = 10 V, ID = 2 A
RDS(on) - 2.5 3
Ω
Semiconductor Group 309/96
BUZ 80 A
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Dynamic Characteristics
Transconductance
VDS
≥
2 * ID * RDS(on)max, ID = 2 A
gfs 1 3.6 -
S
Input capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Ciss - 900 1350
pF
Output capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Coss - 95 140
Reverse transfer capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Crss - 50 75
Turn-on delay time
VDD = 30 V, VGS = 10 V, ID = 3 A
RGS = 50
Ω
td(on)
- 15 25
ns
Rise time
VDD = 30 V, VGS = 10 V, ID = 3 A
RGS = 50
Ω
tr
- 65 85
Turn-off delay time
VDD = 30 V, VGS = 10 V, ID = 3 A
RGS = 50
Ω
td(off)
- 200 270
Fall time
VDD = 30 V, VGS = 10 V, ID = 3 A
RGS = 50
Ω
tf
- 65 85
Semiconductor Group 409/96
BUZ 80 A
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Reverse Diode
Inverse diode continuous forward current
TC = 25 °C
IS- - 3.6
A
Inverse diode direct current,pulsed
TC = 25 °C
ISM - - 14.5
Inverse diode forward voltage
VGS = 0 V, IF = 6.2 A
VSD - 1 1.3
V
Reverse recovery time
VR = 100 V, IF=lS, diF/dt = 100 A/µs
trr - 370 -
ns
Reverse recovery charge
VR = 100 V, IF=lS, diF/dt = 100 A/µs
Qrr - 2.5 -
µC
509/96
Semiconductor Group
BUZ 80 A
Drain current
ID =
ƒ
(TC)
parameter: VGS
≥
10 V
0 20 40 60 80 100 120 °C 160
TC
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
A
3.8
ID
Power dissipation
Ptot =
ƒ
(TC)
0 20 40 60 80 100 120 °C 160
TC
0
10
20
30
40
50
60
70
80
90
W
110
Ptot
Safe operating area
ID =
ƒ
(VDS)
parameter: D = 0.01, TC = 25°C
-1
10
0
10
1
10
2
10
A
ID
10 0 10 1 10 2 10 3
V VDS
R
DS(on) = V
DS / I
D
DC
10 ms
1 ms
100 µs
tp = 14.0µs
Transient thermal impedance
Zth JC =
ƒ
(tp)
parameter: D = tp / T
-4
10
-3
10
-2
10
-1
10
0
10
1
10
K/W
ZthJC
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0
s
tp
single pulse 0.01
0.02
0.05
0.10
0.20
D = 0.50
Semiconductor Group 609/96
BUZ 80 A
Typ. output characteristics
ID =
ƒ(
VDS)
parameter: tp = 80 µs , Tj = 25 °C
0 5 10 15 20 25 30 35 V45
VDS
0.0
1.0
2.0
3.0
4.0
5.0
6.0
A
8.0
ID
VGS [V]
a
a4.0
b
b4.5
c
c5.0
d
d5.5
ee6.0
f
f6.5
g
g7.0
h
h7.5
i
i8.0
j
j9.0
k
k10.0
l
Ptot = 100W
l20.0
Typ. drain-source on-resistance
RDS (on) =
ƒ(
ID)
parameter: tp = 80 µs, Tj = 25 °C
0.0 1.0 2.0 3.0 4.0 5.0 6.0 A7.5
ID
0
1
2
3
4
5
6
7
8
Ω
10
RDS (on)
VGS [V] =
a
4.0
VGS [V] =
a
a
4.5
b
b
5.0
c
c
5.5
d
d
6.0
e
e
6.5
f
f
7.0
g
g
7.5
h
h
8.0
i
i
9.0
j
j
10.0
k
k
20.0
Typ. transfer characteristics ID = f (VGS)
parameter: tp = 80 µs
VDS
≥
2 x ID x RDS(on)max
012345678V10
VGS
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
A
5.0
ID
Typ. forward transconductance gfs = f (ID)
parameter: tp = 80 µs,
VDS
≥
2 x ID x RDS(on)max
0.0 0.5 1.0 1.5 2.0 2.5 3.0 A4.0
ID
0.0
0.5
1.0
1.5
2.0
S
3.0
gfs
709/96
Semiconductor Group
BUZ 80 A
Gate threshold voltage
VGS (th) =
ƒ
(Tj)
parameter: VGS = VDS, ID = 1 mA
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
3.6
4.0
V
4.6
VGS(th)
-60 -20 20 60 100 °C 160
Tj
2%
typ
98%
Drain-source on-resistance
RDS (on) =
ƒ
(Tj)
parameter: ID = 2 A, VGS = 10 V
-60 -20 20 60 100 °C 160
Tj
0
1
2
3
4
5
6
7
8
9
10
11
12
Ω
14
RDS (on)
typ
98%
Typ. capacitances
C = f (VDS)
parameter:VGS = 0V, f = 1MHz
0 5 10 15 20 25 30 V40
VDS
-2
10
-1
10
0
10
1
10
nF
C
Crss
Coss
Ciss
Forward characteristics of reverse diode
IF =
ƒ
(VSD)
parameter: Tj, tp = 80 µs
-1
10
0
10
1
10
2
10
A
IF
0.0 0.4 0.8 1.2 1.6 2.0 2.4 V3.0
VSD
Tj = 25 °C typ
Tj = 25 °C (98%)
Tj = 150 °C typ
Tj = 150 °C (98%)
Semiconductor Group 809/96
BUZ 80 A
Avalanche energy EAS =
ƒ
(Tj)
parameter: ID = 3.1 A, VDD = 50 V
RGS = 25
Ω
, L = 62.4 mH
20 40 60 80 100 120 °C 160
Tj
0
40
80
120
160
200
240
280
mJ
340
EAS
Typ. gate charge
VGS =
ƒ
(QGate)
parameter: ID puls = 5 A
0 10 20 30 40 50 nC 70
QGate
0
2
4
6
8
10
12
V
16
VGS
DS max
V
0,8
DS max
V
0,2
Drain-source breakdown voltage
V(BR)DSS =
ƒ
(Tj)
-60 -20 20 60 100 °C 160
Tj
720
740
760
780
800
820
840
860
880
900
920
V
960
V(BR)DSS
Semiconductor Group 909/96
BUZ 80 A
Package Outlines
TO-220 AB
Dimension in mm
