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SEMICONDUCTOR
TECHNICAL DATA
2N7002K
N Channel MOSFET
ESD Protected 2000V
Revision No : 2
INTERFACE AND SWITCHING APPLICATION.
FEATURES
·ESD Protected 2000V.
·High density cell design for low RDS(ON).
·Voltage controlled small signal switch.
·Rugged and reliable.
·High saturation current capablity.
MAXIMUM RATING (Ta=25℃)
DIM MILLIMETERS
SOT-23
A
B
C
D
E
2.93 0.20
1.30+0.20/-0.15
0.40+0.15/-0.05
2.40+0.30/-0.20
G 1.90
H
J
K
L
M
N
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
Q 0.1 MAX
0.20 MIN
1.00+0.20/-0.10
M
J
K
E
1
23
H
G
A
N
C
B
D
1.30 MAX
LL
PP
P7
+
_
Q
1. SOURCE
2. GATE
3. DRAIN
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=10μA60 - - V
Zero Gate Voltage Drain Current IDSS VDS=60V, VGS=0V - - 1 μA
Gate-Body Leakage, Forward IGSSF VGS=20V, VDS=0V - - 10 μA
Gate-Body Leakage, Reverse IGSSR VGS=-20V, VDS=0V - --10 μA
Type Name
Marking
Lot No.
WC
EQUIVALENT CIRCUIT
CHARACTERISTIC SYMBOL RATING UNIT
Drain-Source Voltage VDSS 60 V
Gate-Source Voltage VGSS ±20 V
Drain Current
Continuous ID300
mA
Pulsed (Note 1) IDP 1200
Drain Power Dissipation (Note 2) PD300 mW
Junction Temperature Tj150 ℃
Storage Temperature Range Tstg -55～150 ℃
Note 1) Pulse Width≦10㎲, Duty Cycle≦1%
Note 2) Package mounted on a glass epoxy PCB(100mm2×1mm)
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2N7002K
Revision No : 2
ELECTRICAL CHARACTERISTICS (Ta=25℃)
ON CHARACTERISTICS (Note 3)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Gate Threshold Voltage Vth VDS=VGS, ID=250μA1.1 - 2.35 V
Drain-Source ON Resistance RDS(ON)
VGS=10V, ID=500mA - 1.2 1.8 Ω
VGS=5V, ID=50mA - 1.5 2.1
Drain-Source ON Voltage VDS(ON)
VGS=10V, ID=500mA - 0.6 0.9
V
VGS=5V, ID=50mA - 0.075 0.105
On State Drain Current ID(ON) VGS=10V, VDS=≥2 VDS(ON) 500 - - mA
Forward Transconductance gFS VDS=10V, ID=500mA 200 580 - mS
Drain-Source Diode Forward Voltage VSD VGS=0V, IS=200mA (Note1) - 760 1150 mV
DYNAMIC CHARACTERISTICS
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Input Capacitance Ciss
VDS=25V, VGS=0V, f=1MHz
- 52.1 -
pFReverse Transfer Capacitance Crss - 3.9 -
Output Capacitance Coss - 7.7 -
Switching Time
Turn-On Time ton VDD=30V, RL=155Ω, ID=190mA,
VGS=10V
- 11.1 -
nS
Turn-Off Time toff - 22.5 -
Note 3) Pulse Test : Pulse Width≦80㎲, Duty Cycle≦1%
SWITCHING TIME TEST CIRCUIT
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2N7002K
Revision No : 2
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2N7002K
Revision No : 2
