SEMICONDUCTOR 2N7002K TECHNICAL DATA N Channel MOSFET ESD Protected 2000V INTERFACE AND SWITCHING APPLICATION. FEATURES *ESD Protected 2000V. E B L L *High density cell design for low RDS(ON). D *Voltage controlled small signal switch. 2 A 3 G *Rugged and reliable. H *High saturation current capablity. 1 Q SYMBOL RATING UNIT Drain-Source Voltage VDSS 60 V Gate-Source Voltage VGSS 20 V Continuous ID 300 Pulsed (Note 1) IDP 1200 Drain Power Dissipation (Note 2) PD 300 mW Junction Temperature Tj 150 Tstg -55150 J K CHARACTERISTIC C MAXIMUM RATING (Ta=25) P N P DIM A B C D E G H J K L M N P Q MILLIMETERS 2.93 +_ 0.20 1.30+0.20/-0.15 1.30 MAX 0.40+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 0.1 MAX M 1. SOURCE 2. GATE 3. DRAIN Drain Current mA Storage Temperature Range SOT-23 Note 1) Pulse Width10, Duty Cycle1% Note 2) Package mounted on a glass epoxy PCB(100mm2x1mm) EQUIVALENT CIRCUIT Marking Lot No. WC Type Name ELECTRICAL CHARACTERISTICS (Ta=25) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=10A 60 - - V Zero Gate Voltage Drain Current IDSS VDS=60V, VGS=0V - - 1 A Gate-Body Leakage, Forward IGSSF VGS=20V, VDS=0V - - 10 A Gate-Body Leakage, Reverse IGSSR VGS=-20V, VDS=0V - - -10 A 2009. 11. 17 Revision No : 2 1/4 2N7002K ELECTRICAL CHARACTERISTICS (Ta=25) ON CHARACTERISTICS (Note 3) CHARACTERISTIC SYMBOL Vth Gate Threshold Voltage TEST CONDITION MIN. TYP. MAX. UNIT VDS=VGS, ID=250A 1.1 - 2.35 V VGS=10V, ID=500mA - 1.2 1.8 VGS=5V, ID=50mA - 1.5 2.1 VGS=10V, ID=500mA - 0.6 0.9 VGS=5V, ID=50mA - 0.075 0.105 VGS=10V, VDS=2 VDS(ON) 500 - - mA 200 580 - mS - 760 1150 mV MIN. TYP. MAX. UNIT - 52.1 - - 3.9 - - 7.7 - RDS(ON) Drain-Source ON Resistance VDS(ON) Drain-Source ON Voltage ID(ON) On State Drain Current V Forward Transconductance gFS VDS=10V, ID=500mA Drain-Source Diode Forward Voltage VSD VGS=0V, IS=200mA (Note1) Note 3) Pulse Test : Pulse Width80, Duty Cycle1% DYNAMIC CHARACTERISTICS CHARACTERISTIC SYMBOL Input Capacitance Ciss Reverse Transfer Capacitance Crss Output Capacitance Coss TEST CONDITION VDS=25V, VGS=0V, f=1MHz Turn-On Time ton VDD=30V, RL=155, ID=190mA, - 11.1 - Turn-Off Time toff VGS=10V - 22.5 - Switching Time pF nS SWITCHING TIME TEST CIRCUIT 2009. 11. 17 Revision No : 2 2/4 2N7002K 2009. 11. 17 Revision No : 2 3/4 2N7002K 2009. 11. 17 Revision No : 2 4/4