SQD25N06-22L www.vishay.com Vishay Siliconix Automotive N-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY VDS (V) * TrenchFET(R) power MOSFET 60 RDS(on) () at VGS = 10 V 0.022 RDS(on) () at VGS = 4.5 V 0.033 ID (A) * Package with low thermal resistance * 100 % Rg and UIS tested * AEC-Q101 qualified d 25 Configuration * Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Single Package TO-252 D TO-252 TO Drain connected to tab G S S D N-Channel MOSFET G Top View ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 60 Gate-Source Voltage VGS 20 Continuous Drain Current TC = 25 C a TC = 125 C Continuous Source Current (Diode Conduction) a Pulsed Drain Current b Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation b L = 0.1 mH TC = 25 C TC = 125 C Operating Junction and Storage Temperature Range ID V 25 20 IS 25 IDM 100 IAS 24 EAS 28 PD UNIT 62 20 A mJ W TJ, Tstg -55 to +175 C SYMBOL LIMIT UNIT RthJA 50 RthJC 2.4 THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Case (Drain) PCB Mount c C/W Notes a. Package limited. b. Pulse test; pulse width 300 s, duty cycle 2 %. c. When mounted on 1" square PCB (FR4 material). d. Parametric verification ongoing. S15-1873-Rev. D, 10-Aug-15 Document Number: 65360 1 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQD25N06-22L www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a VDS VGS = 0 V, ID = 250 A 60 - - VGS(th) VDS = VGS, ID = 250 A 1.5 2.0 2.5 VDS = 0 V, VGS = 20 V IGSS IDSS ID(on) RDS(on) gfs - - 100 VGS = 0 V VDS = 60 V - - 1.0 VGS = 0 V VDS = 60 V, TJ = 125 C - - 50 VGS = 0 V VDS = 60 V, TJ = 175 C - - 250 VGS = 10 V VDS 5 V 25 - - VGS = 10 V ID = 20 A - 0.018 0.022 VGS = 10 V ID = 20 A, TJ = 125 C - - 0.039 VGS = 10 V ID = 20 A, TJ = 175 C - - 0.049 VGS = 4.5 V ID = 20 A, TJ = 25 C VDS = 15 V, ID = 12 A - 0.027 0.033 - 32 - V nA A A S Dynamic b Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge c Qg Gate-Source Charge c Qgs Gate-Drain Charge c Qgd Gate Resistance Turn-On Delay Time c Rise Time c Turn-Off Delay Time c Fall Time c Rg VGS = 0 V VGS = 10 V VDS = 25 V, f = 1 MHz VDS = 30 V, ID = 25 A f = 1 MHz td(on) tr td(off) VDD = 30 V, RL = 1.2 ID 25 A, VGEN = 10 V, Rg = 1 tf Source-Drain Diode Ratings and Characteristics - 1580 1975 - 305 382 - 130 163 - 33 50 - 5.3 - - 6.8 - 0.5 1.3 3.3 - 8 12 pF nC - 10 15 - 24 36 - 6 9 - - 100 A - 0.9 1.5 V ns b Pulsed Current a ISM Forward Voltage VSD IF = 25 A, VGS = 0 V Notes a. Pulse test; pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S15-1873-Rev. D, 10-Aug-15 Document Number: 65360 2 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQD25N06-22L www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 C, unless otherwise noted) 30 30 VGS = 10 V thru 5 V 24 ID - Drain Current (A) ID - Drain Current (A) 24 18 VGS = 4 V 12 6 18 TC = 125 C 12 25 C 6 VGS = 3 V - 55 C 0 0 0 2 4 6 8 10 0 2 4 6 8 VDS - Drain-to Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 10 0.10 50 40 RDS(on) - On-Resistance () gfs - Transconductance (S) TC = - 55 C 25 C 30 125 C 20 10 0.08 0.06 0.04 VGS = 4.5 V 0.02 VGS = 10 V 0 0 0 6 12 18 24 0 30 6 12 Transconductance 30 On-Resistance vs. Drain Current 80 2.5 ID = 12 A ID = 10 mA VDS - Drain-to-Source Voltage (V) RDS(on) - On-Resistance (Normalized) 24 ID - Drain Current (A) ID - Drain Current (A) 2.1 VGS = 10 V 1.7 VGS = 4.5 V 1.3 0.9 0.5 -50 18 -25 0 25 50 75 100 125 150 175 76 72 68 64 60 -50 -25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (C) TJ - Junction Temperature (C) On-Resistance vs. Junction Temperature Drain Source Breakdown vs. Junction Temperature S15-1873-Rev. D, 10-Aug-15 Document Number: 65360 3 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQD25N06-22L www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 C, unless otherwise noted) 100 0.25 TJ = 150 C 0.20 1 RDS(on) - On-Resistance IS - Source Current (A) 10 TJ = 25 C 0.1 0.01 0.15 0.10 TJ = 150 C 0.05 0.001 TJ = 25 C 0 0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 10 3000 ID = 25 A VGS - Gate-to-Source Voltage (V) C - Capacitance (pF) 2500 2000 Ciss 1500 1000 Coss 500 Crss 0 0 8 VDS = 30 V 6 4 2 0 10 20 30 40 50 0 60 5 10 15 20 25 V DS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC) Capacitance Gate Charge 30 35 0.6 VGS(th) - Variance (V) 0.3 0 -0.3 ID = 5 mA -0.6 ID = 250 A -0.9 -1.2 -50 -25 0 25 50 75 100 125 150 175 TJ - Temperature (C) Threshold Voltage S15-1873-Rev. D, 10-Aug-15 Document Number: 65360 4 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQD25N06-22L www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 C, unless otherwise noted) IDM Limited 100 ID - Drain Current (A) Limited by RDS(on)* 10 100 s ID Limited 1 ms 10 ms 100 ms 1 s, 10 s, DC 1 0.1 TC = 25 C Single Pulse 0.01 0.01 BVDSS Limited 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient S15-1873-Rev. D, 10-Aug-15 Document Number: 65360 5 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQD25N06-22L www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 C, unless otherwise noted) 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 100 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Note * The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 C) - Normalized Transient Thermal Impedance Junction-to-Case (25 C) are given for general guidelines only to enable the user to get a "ball park" indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65360. S15-1873-Rev. D, 10-Aug-15 Document Number: 65360 6 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQD25N06-22L www.vishay.com REVISION HISTORY REVISION D a DATE 04-Aug-15 Vishay Siliconix DESCRIPTION OF CHANGE * Revised Rg minimum limit Note a. As of April 2014 S15-1873-Rev. D, 10-Aug-15 Document Number: 65360 7 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix TO-252AA Case Outline E MILLIMETERS A C2 e b2 D1 e1 E1 L gage plane height (0.5 mm) L4 b L5 H D L3 b3 C A1 INCHES DIM. MIN. MAX. MIN. MAX. A 2.18 2.38 0.086 0.094 A1 - 0.127 - 0.005 b 0.64 0.88 0.025 0.035 b2 0.76 1.14 0.030 0.045 b3 4.95 5.46 0.195 0.215 0.024 C 0.46 0.61 0.018 C2 0.46 0.89 0.018 0.035 D 5.97 6.22 0.235 0.245 D1 4.10 - 0.161 - E 6.35 6.73 0.250 0.265 E1 4.32 - 0.170 - H 9.40 10.41 0.370 0.410 e 2.28 BSC e1 0.090 BSC 4.56 BSC 0.180 BSC L 1.40 1.78 0.055 0.070 L3 0.89 1.27 0.035 0.050 L4 - 1.02 - 0.040 L5 1.01 1.52 0.040 0.060 ECN: T13-0592-Rev. A, 02-Sep-13 DWG: 6019 Note * Dimension L3 is for reference only. Revision: 02-Sep-13 Document Number: 64424 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR DPAK (TO-252) 0.224 0.243 0.087 (2.202) 0.090 (2.286) (10.668) 0.420 (6.180) (5.690) 0.180 0.055 (4.572) (1.397) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72594 Revision: 21-Jan-08 www.vishay.com 3 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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