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BSS63 — PNP General-Purpose Amplifier

BSS63 Rev. 1.1.0 1

March 2014

BSS63

PNP General-Purpose Amplifier

Ordering Information

Absolute Maximum Ratings(1),(2)

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-

ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-

tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The

absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.

Notes:

1. These ratings are based on a maximum junction temperature of 150°C.

2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or

low-duty-cycle operations.

Part Number Marking Package Packing Method

BSS63 T3 SOT-23 3L Tape and Reel

Symbol Parameter Value Unit

VCEO Collector-Emitter Voltage -100 V

VCBO Collector-Base Voltage -110 V

VEBO Emitter-Base Voltage -6 V

ICCollector Current - Continuous -200 mA

TJ , TSTG Junction and Storage Temperature Range -55 to +150 °C

SOT-23

Mark: T3

Description

This device is designed for general-purpose amplifier

and switch applications requiring high voltages.

Sourced from process 74.

BSS63 — PNP General-Purpose Amplifier

BSS63 Rev. 1.1.0 2

Thermal Characteristics(3)

Values are at TA = 25°C unless otherwise noted.

Note:

3. Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm.

Electrical Characteristics

Values are at TA = 25°C unless otherwise noted.

Symbol Parameter Max. Unit

PDTotal Device Dissipation 350 mW

Derate Above TA = 25°C 2.8 mW/°C

RθJA Thermal Resistance, Junction to Ambient 357 °C/W

Symbol Parameter Conditions Min. Max. Unit

V(BR)CEO Collector-Emitter Breakdown Voltage IC = -100 μA, IB = 0 -100 V

V(BR)CBO Collector-Base Breakdown Voltage IC = -10 μA, IE = 0 -110 V

V(BR)EBO Emitter-Base Breakdown V oltage IE = -1.0 μA, IC = 0 -6.0 V

ICBO Collector Cut-Off Current VCB = -90 V, IE = 0 -100 nA

VCB = -90 V, IE = 0,

TA = 150°C -50 μA

IEBO Emitter Cut-Off Current VEB = -6.0 V, IC = 0 -200 nA

hFE DC Current Gain IC = -10 mA, VCE = -1.0 V 30

IC = -25 mA, VCE = -1.0 V 30

VCE(sat) Collector-Emitter Saturation Voltage IC = -25 mA, IB = -2.5 mA -0.25 V

VBE(sat) Base-Emitter Saturation Voltage IC = -25 mA, I B = -2.5 mA -0.9 V

fTCurrent Gain - Bandwidth Product IC = 25 mA, VCE = -5.0 V,

f = 35 MHz 50 MHz

BSS63 — PNP General-Purpose Amplifier

BSS63 Rev. 1.1.0 3

Typical Performance Characteristics

Figure 1. Typical Pulsed Current Gain vs.

Collector Current Figure 2. Collector-Emitter Saturation Voltage vs.

Collector Current

Figure 3. Base-Em itter Saturation Voltage

vs. Collector Current Figure 4. Base-Emitter On Voltage vs.

Collector Current

Figure 5. Collect or Cut-Off Current vs.

Ambient Temperature Figure 6. Collector-Emitter Breakdown Voltage with

Resistance Between Emitter-Base

0.0001 0.001 0.01 0.1 1

100

150

200

I - COLL EC TO R CU RR ENT (A)

h - TYPICAL PULSED CURRE NT GAIN

- 40 °C

25 °C

V = 5V

125 °C

0.1 1 10 100

0.1

0.2

0.3

0.4

I - COLLECTOR CURRENT (mA)

V - COLLECTOR-EMITTER VOLTAGE (V)

CESAT

β= 1 0

125 °C

- 40 °C

25 °C

0.1 1 10 100

0.2

0.4

0.6

0.8

I - COLLECTOR CURRENT ( mA)

V - BASE-EMITTER VOLTAG E (V)

BESAT

β= 10

125 °C

- 40 °C

25 °C

0.1 1 10 100

0.2

0.4

0.6

0.8

I - COLLECTOR CURRENT (mA)

V - B A SE-E MI TTER ON VOLTA GE (V)

BE(O N)

125 °C

- 40 °C

25 °C

V = 5V

25 50 75 100 125 150

0.1

10 0

T - AM BI EN T TE MPE RATU R E ( C )

I - COLLECTOR CURRENT (nA)

V = 100V

CBO

0.1 1 10 100 1000

170

180

190

200

210

220

RESISTANCE (k )

BV - BREAKDOWN VOLTAGE (V)

CER

BSS63 — PNP General-Purpose Amplifier

BSS63 Rev. 1.1.0 4

Typical Performance Characteristics (Continued)

Figure 7. Input and Output Capacitance vs.

Reverse Voltage Figure 8. Power Dissipation vs.

Ambient Temper ature

0.1 1 10 100

V - REVERSE BIAS VOLTAGE(V)

CAPACITANCE (pF)

f = 1.0 MHz

0 25 50 75 100 125 150

100

150

200

250

300

350

TEMPERATURE ( C)

P - POWER DISSIPATION (mW)

SOT-23

BSS63 — PNP General-Purpose Amplifier

BSS63 Rev. 1.1.0 5

Physical Dimensions

Figure 9. 3-LEAD, SOT23, JEDEC TO-236, LOW PROFILE (ACTIVE)

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obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the

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Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:

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For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area:

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LAND PATTERN

RECOMMENDATION

NOTES: UNLESS OTHERWISE SPECIFIED

A) REFERENCE JEDEC REGISTRATION

TO-236, VARIATION AB, ISSUE H.

B) ALL DIMENSIONS ARE IN MILLIMETERS.

C) DIMENSIONS ARE INCLUSIVE OF BURRS,

MOLD FLASH AND TIE BAR EXTRUSIONS.

D) DIMENSIONING AND TOLERANCING PER

ASME Y14.5M - 1994.

E) DRAWING FILE NAME: MA03DREV10

SEE DETAIL A

SEATING

PLANE

SCALE: 2X

GAGE PLANE

(0.55)

(0.93)

1.20 MAX

0.10

0.00

0.10 C

2.40±0.30

2.92±0.20

1.30+0.20

-0.15

0.60

0.37

0.20 A B

1.90

0.95

(0.29)

0.95

1.40

2.20

1.00

1.90

0.25

0.23

0.08

0.20 MIN

SOT-23

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Rev. I68

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