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DATA SH EET

Product speciﬁcation

Supersedes data of 1997 Apr 15 2001 Oct 18

DISCRETE SEMICONDUCTORS

BGY67

200 MHz, 22 dB gain reverse

amplifier

ook, halfpage

M3D252

2001 Oct 18 2

Philips Semiconductors Product speciﬁcation

200 MHz, 22 dB gain reverse ampliﬁer BGY67

FEATURES

•Excellent linearity

•Extremely low noise

•Silicon nitride passivation

•Rugged construction

•TiPtAu metallized crystals ensure

optimal reliability.

DESCRIPTION

Hybrid amplifier module for CATV

systems operating over a frequency

range of 5 to 200 MHz at a voltage

supply of +24 V (DC). The device is

intended as a reverse amplifier for

use in two way systems.

PINNING - SOT115J PIN CONFIGURATION

PIN DESCRIPTION

1 input

2 common

3 common

5+V

7 common

8 common

9 output Fig.1 Simplified outline.

page

789

2351

Side view

MSA319

QUICK REFERENCE DATA

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Gppower gain f = 10 MHz 21.5 −22.5 dB

Itot total current consumption (DC) VB= +24 V −215 230 mA

SYMBOL PARAMETER MIN. MAX. UNIT

ViRF input voltage −65 dBmV

Tstg storage temperature −40 +100 °C

Tmb mounting base operating temperature −20 +90 °C

2001 Oct 18 3

Philips Semiconductors Product speciﬁcation

200 MHz, 22 dB gain reverse ampliﬁer BGY67

CHARACTERISTICS

Table 1 Bandwidth 5 to 200 MHz; Tmb =30°C; ZS=Z

L=75Ω

Notes

1. fp= 83.25 MHz; Vp= 50 dBmV;

fq= 109.25 MHz; Vq= 50 dBmV;

measured at fp+f

q= 192.5 MHz.

2. Measured according to DIN45004B;

fp= 35.25 MHz; Vo=V

;

q= 42.25 MHz; Vq=V

o−6 dB;

fr= 44.25 MHz; Vr=V

o−6 dB;

measured at fp+f

q−f

r= 33.25 MHz.

3. Measured according to DIN45004B;

fp= 187.25 MHz; Vo=V

;

q= 194.25 MHz; Vq=V

o−6 dB;

fr= 196.25 MHz; Vr=V

o−6 dB;

measured at fp+f

q−f

r= 185.25 MHz.

4. The module normally operates at VB= +24 V, but is able to withstand supply transients up to +30 V.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Gppower gain f = 10 MHz 21.5 −22.5 dB

SL slope cable equivalent f = 5 to 200 MHz −0.2 −+0.5 dB

FL ﬂatness of frequency response f = 5 to 200 MHz −−±0.2 dB

S11 input return losses f = 5 to 200 MHz 20 −−dB

S22 output return losses f = 5 to 200 MHz 20 −−dB

CTB composite triple beat 22 channels ﬂat; Vo= 50 dBmV;

measured at 175.25 MHz −−−67 dB

Xmod cross modulation 22 channels ﬂat; Vo= 50 dBmV;

measured at 55.25 MHz −−−60 dB

d2second order distortion Vo= 50 dBmV; note 1 −−−67 dB

Vooutput voltage dim =−60 dB; note 2 67 −−dBmV

dim =−60 dB; note 3 64 −−dBmV

F noise ﬁgure f = 200 MHz −−5.5 dB

Itot total current consumption DC value; VB= +24 V; note 4 −215 230 mA

2001 Oct 18 4

Philips Semiconductors Product speciﬁcation

200 MHz, 22 dB gain reverse ampliﬁer BGY67

PACKAGE OUTLINE

UNIT A2

max. cee

max. q1q2U1

max. U2W

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC EIAJ

mm 20.8 9.1 0.51

0.38 0.25 27.2 2.54 13.75 2.54 5.08 12.7 8.8 4.15

3.85 2.4 38.1 25.4 10.2 4.2 44.75 8 0.25 0.1 3.8

6-32

UNC

DIMENSIONS (mm are the original dimensions)

SOT115J

0 5 10 mm

scale

max. D

max. L

min.

max. Z

max.

Rectangular single-ended package; aluminium flange; 2 vertical mounting holes;

2 x 6-32 UNC and 2 extra horizontal mounting holes; 7 gold-plated in-line leads SOT115J

U1q

Z p

78923

max.

yMB

99-02-06

yMB

2001 Oct 18 5

Philips Semiconductors Product speciﬁcation

200 MHz, 22 dB gain reverse ampliﬁer BGY67

DATA SHEET STATUS

Notes

1. Please consult the most recently issued data sheet before initiating or completing a design.

2. The product status of the device(s) described in this data sheet may have changed since this data sheet was

published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.

DATA SHEET STATUS(1) PRODUCT

STATUS(2) DEFINITIONS

Objective data Development This data sheet contains data from the objective speciﬁcation for product

development. Philips Semiconductors reserves the right to change the

speciﬁcation in any manner without notice.

Preliminary data Qualiﬁcation This data sheet contains data from the preliminary speciﬁcation.

Supplementary data will be published at a later date. Philips

Semiconductors reserves the right to change the speciﬁcation without

notice, in order to improve the design and supply the best possible

product.

Product data Production This data sheet contains data from the product speciﬁcation. Philips

Semiconductors reserves the right to make changes at any time in order

to improve the design, manufacturing and supply. Changes will be

communicated according to the Customer Product/Process Change

Notiﬁcation (CPCN) procedure SNW-SQ-650A.

DEFINITIONS

Short-form specification  The data in a short-form

specification is extracted from a full data sheet with the

same type number and title. For detailed information see

the relevant data sheet or data handbook.

Limiting values definition Limiting values given are in

accordance with the Absolute Maximum Rating System

(IEC 60134). Stress above one or more of the limiting

values may cause permanent damage to the device.

These are stress ratings only and operation of the device

attheseoratanyotherconditionsabovethosegiveninthe

Characteristics sections of the specification is not implied.

Exposure to limiting values for extended periods may

affect device reliability.

Application information  Applications that are

described herein for any of these products are for

illustrative purposes only. Philips Semiconductors make

norepresentationorwarrantythatsuch applicationswillbe

suitable for the specified use without further testing or

modification.

DISCLAIMERS

Life support applications  These products are not

designed for use in life support appliances, devices, or

systems where malfunction of these products can

reasonably be expected to result in personal injury. Philips

Semiconductorscustomersusingorselling theseproducts

for use in such applications do so at their own risk and

agree to fully indemnify Philips Semiconductors for any

damages resulting from such application.

Right to make changes  Philips Semiconductors

reserves the right to make changes, without notice, in the

products, including circuits, standard cells, and/or

software, described or contained herein in order to

improve design and/or performance. Philips

Semiconductors assumes no responsibility or liability for

theuse of anyoftheseproducts,conveysnolicence or title

under any patent, copyright, or mask work right to these

products,andmakesnorepresentations or warranties that

these products are free from patent, copyright, or mask

work right infringement, unless otherwise specified.

2001 Oct 18 6

Philips Semiconductors Product speciﬁcation

200 MHz, 22 dB gain reverse ampliﬁer BGY67

NOTES

2001 Oct 18 7

Philips Semiconductors Product speciﬁcation

200 MHz, 22 dB gain reverse ampliﬁer BGY67

NOTES

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed

without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license

under patent- or other industrial or intellectual property rights.

Philips Semiconductors – a world wide company

Contact information

For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825

For sales ofﬁces addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.

Printed in The Netherlands 613518/03/pp8 Date of release: 2001 Oct 18 Document order number: 9397 750 08799