© Semiconductor Components Industries, LLC, 2012
June, 2012 Rev. 5
1Publication Order Number:
MBRS3200T3/D
MBRS3200T3G,
NRVBS3200T3G
Surface Mount
Schottky Power Rectifier
This device employs the Schottky Barrier principle in a large area
metaltosilicon power diode. Stateoftheart geometry features
epitaxial construction with oxide passivation and metal overlay
contact. Ideally suited for low voltage, high frequency rectification, or
as free wheeling and polarity protection diodes in surface mount
applications where compact size and weight are critical to the system.
Features
Small Compact Surface Mountable Package with JBend Leads
Rectangular Package for Automated Handling
Highly Stable Oxide Passivated Junction
Very High Blocking Voltage 200 V
175°C Operating Junction Temperature
GuardRing for Stress Protection
NRVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements: AECQ101
Qualified and PPAP Capable
All Packages are PbFree*
Mechanical Charactersistics
Case: Epoxy, Molded, Epoxy Meets UL 94, V0
Weight: 95 mg (approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Cathode Polarity Band
Device Meets MSL 1 Requirements
ESD Ratings:
Machine Model = A
Human Body Model = 1C
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Device Package Shipping
ORDERING INFORMATION
SMB
CASE 403A
PLASTIC
SCHOTTKY BARRIER
RECTIFIER
3.0 AMPERE
200 VOLTS
http://onsemi.com
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
MBRS3200T3G SMB
(PbFree)
2,500 /
Tape & Reel
B320 = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
G= PbFree Package
(Note: Microdot may be in either location)
AYWW
B320G
G
MARKING DIAGRAM
NRVBS3200T3G SMB
(PbFree)
2,500 /
Tape & Reel
MBRS3200T3G, NRVBS3200T3G
http://onsemi.com
2
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
200 V
Average Rectified Forward Current (TL = 120 °C) IF(AV) 3.0 A
NonRepetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
IFSM 100
A
Operating Junction Temperature TJ65 to +175 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Thermal Resistance, JunctiontoLead (Note 1)
Thermal Resistance, JunctiontoAmbient (Note 2)
RqJL
RqJA
13
62
°C/W
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (Note 3)
(IF = 3.0 A, TJ = 25°C)
(IF = 4.0 A, TJ = 25°C)
(IF = 3.0 A, TJ = 150°C)
VF0.84
0.86
0.59
V
Maximum Instantaneous Reverse Current (Note 3)
(Rated dc Voltage, TJ = 25°C)
(Rated dc Voltage, TJ = 150°C)
IR1.0
5.0
mA
mA
1. Minimum pad size (0.108 × 0.085 inch) for each lead on FR4 board.
2. 1 inch square pad size (1 × 0.5 inch) for each lead on FR4 board.
3. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%.
100
1
0.1
1.00.2 0.3 0.4 0.5 0.6 0.7
VF
, FORWARD VOLTAGE (V)
Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage
10
0.8 0.9 1.1 1.3
IF
, FORWARD CURRENT (A)
TA = 25°C
TA = 150°C
100
1
0.1
1.00.2 0.3 0.4 0.5 0.6 0.7
VF
, FORWARD VOLTAGE (V)
10
0.8 0.9 1.1 1.3
IF
, FORWARD CURRENT (A)
TA = 25°C
TA = 150°C
1.2
TA = 175°CTA = 175°C
1.2
TA = 100°C
TA = 100°C
MBRS3200T3G, NRVBS3200T3G
http://onsemi.com
3
1.0E09
1600 20 40 60 80 100
VR, REVERSE VOLTAGE (V)
Figure 3. Typical Reverse Current
120 140 180 200
IR, REVERSE CURRENT (A)
TA = 25°C
TA = 150°C
TA = 100°C
1.0E08
1.0E07
1.0E06
1.0E05
1.0E04
1.0E02
1.0E09
1600 20 40 60 80 100
VR, REVERSE VOLTAGE (V)
Figure 4. Maximum Reverse Current
120 140 180 200
IR, REVERSE CURRENT (A)
1.0E05
1.0E04
1.0E03
1.0E07
1.0E02
TA = 175°C
1.0E03
TA = 25°C
TA = 150°C
TA = 100°C
TA = 175°C
1.0E06
1.0E08
Figure 5. Typical Capacitance
1000
10
1600 20 40 60 80 100
VR, REVERSE VOLTAGE (V)
100
120 140 180 200
C, CAPACITANCE (pF)
TC = 25°C
f = 1 MHz
Typical Capacitance
at 0 V = 209 V
0
15080 90 100 110 120
TL, LEAD TEMPERATURE (°C)
Figure 6. Current Derating Lead
130 140 180
IF
, AVERAGE FORWARD CURRENT (A)
1
2
3
4
6
7
5
SQUARE WAVE
dc
Figure 7. Forward Power Dissipation
5
0
40123
IO, AVERAGE FORWARD CURRENT (A)
2.5
56
Pfo, AVERAGE POWER DISSIPATION (W)
0.5
1
1.5
2
4.5
3
3.5
4SQUARE WAVE
dc
160 170
RqJL = 13°C/W
MBRS3200T3G, NRVBS3200T3G
http://onsemi.com
4
PACKAGE DIMENSIONS
SMB
CASE 403A03
ISSUE H
E
bD
c
L1
L
A
A1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. D DIMENSION SHALL BE MEASURED WITHIN DIMENSION P.
2.261
0.089
2.743
0.108
2.159
0.085 ǒmm
inchesǓ
SCALE 8:1
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
DIM
A
MIN NOM MAX MIN
MILLIMETERS
1.90 2.20 2.28 0.075
INCHES
A1 0.05 0.10 0.19 0.002
b1.96 2.03 2.20 0.077
c0.15 0.23 0.31 0.006
D3.30 3.56 3.95 0.130
E4.06 4.32 4.60 0.160
L0.76 1.02 1.60 0.030
0.087 0.090
0.004 0.007
0.080 0.087
0.009 0.012
0.140 0.156
0.170 0.181
0.040 0.063
NOM MAX
5.21 5.44 5.60 0.205 0.214 0.220
HE
0.51 REF 0.020 REF
D
L1
HE
POLARITY INDICATOR
OPTIONAL AS NEEDED
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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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MBRS3200T3/D
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