N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 – JUNE 94
FEATURES
* 60 Volt VDS
*R
DS(on) =1Ω
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage VDS 60 V
Continuous Drain Current at Tamb=25°C ID600 mA
Pulsed Drain Current IDM 8A
Gate-Source Voltage VGS ±20 V
Power Dissipation at Tamb=25°C Ptot 0.7 W
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source Breakdown
Voltage
BVDSS 60 V ID=1mA, VGS=0V
Gate-Source Threshold
Voltage
VGS(th) 1.3 3 V ID=1mA, VDS=V
GS
Gate-Body Leakage IGSS 100 nA VGS=±20V, VDS=0V
Zero Gate Voltage Drain
Current
IDSS 10
100 µA
µA
VDS=60V, VGS=0
VDS=48V, VGS=0V, T=125°C(2)
On-State Drain Current(1) ID(on) 3AV
DS=25V, VGS=10V
Static Drain-Source On-State
Resistance (1)
RDS(on) 1
1.5 Ω
ΩVGS=10V,ID=1.5A
VGS=5V,ID=500mA
Forward Transconductance(1)(2
)
gfs 300 mS VDS=25V,ID=1.5A
Input Capacitance (2) Ciss 100 pF
Common Source Output
Capacitance (2)
Coss 60 pF VDS=25V, VGS=0V, f=1MHz
Reverse Transfer Capacitance
(2)
Crss 20 pF
Turn-On Delay Time (2)(3) td(on) 8ns
VDD ≈25V, ID=1.5A
Rise Time (2)(3) tr12 ns
Turn-Off Delay Time (2)(3) td(off) 12 ns
Fall Time (2)(3) tf15 ns
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test.
(3) Switching times measured with 50Ωsource impedance and <5ns rise time on a pulse generator
ZVN4206A
D
G
S
E-LINE
TO92 COMPATIBLE