N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 – JUNE 94
FEATURES
* 60 Volt VDS
*R
DS(on) =1Ω
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage VDS 60 V
Continuous Drain Current at Tamb=25°C ID600 mA
Pulsed Drain Current IDM 8A
Gate-Source Voltage VGS ±20 V
Power Dissipation at Tamb=25°C Ptot 0.7 W
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source Breakdown
Voltage
BVDSS 60 V ID=1mA, VGS=0V
Gate-Source Threshold
Voltage
VGS(th) 1.3 3 V ID=1mA, VDS=V
GS
Gate-Body Leakage IGSS 100 nA VGS=±20V, VDS=0V
Zero Gate Voltage Drain
Current
IDSS 10
100 µA
µA
VDS=60V, VGS=0
VDS=48V, VGS=0V, T=125°C(2)
On-State Drain Current(1) ID(on) 3AV
DS=25V, VGS=10V
Static Drain-Source On-State
Resistance (1)
RDS(on) 1
1.5 Ω
ΩVGS=10V,ID=1.5A
VGS=5V,ID=500mA
Forward Transconductance(1)(2
)
gfs 300 mS VDS=25V,ID=1.5A
Input Capacitance (2) Ciss 100 pF
Common Source Output
Capacitance (2)
Coss 60 pF VDS=25V, VGS=0V, f=1MHz
Reverse Transfer Capacitance
(2)
Crss 20 pF
Turn-On Delay Time (2)(3) td(on) 8ns
VDD ≈25V, ID=1.5A
Rise Time (2)(3) tr12 ns
Turn-Off Delay Time (2)(3) td(off) 12 ns
Fall Time (2)(3) tf15 ns
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test.
(3) Switching times measured with 50Ωsource impedance and <5ns rise time on a pulse generator
ZVN4206A
D
G
S
E-LINE
TO92 COMPATIBLE
TYPICAL CHARACTERISTICS
Output Characteristics
V
DS
- Drain Source Voltage (Volts)
Transfer Characteristics
246810
010 20304050
Saturation Characteristics
V
DS-
Drain Source
Voltage (Volts)
Voltage Saturati on Chara c te ris tics
V
GS-
Gate Source Voltage
(Volts) V
GS-
Gate Source Voltage (Volts)
V
DS
- Drain Source Voltage (Volts)
0246810
6
4
0
2
I
D
- Drain Current (Amps)
V
DS=
10V
0
10
6
2
4
8
02 4 6 8 10
I
D=
3A
1.5A
0.5A
I
D
- Drain Current (Amps)
I
D
- Drain Current (Amps)
On-resistance v drain current
I
D-
Drain Current
(Amps)
R
DS(on)
-Drain Source On Resistance
(Ω)
0.1 1.0 10
4.5V 6V
V
GS
=3.5V 8V 10V
0.1
10
1.0
Normalised R
DS(on)
and V
GS(th)
v Temperature
T
j
-Junction Temperature (°C)
Normalised R
DS(on)
and V
GS(th)
-50 -25 0 25 50 75 100 150
125 175 200
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.6
0.8
Drain-Source Resistance R
DS(on)
Gate Threshold Voltage V
GS(TH)
I
D=
1.5A
V
GS=
10V
I
D=
1mA
V
GS=
V
DS
2.6
225
0
4
2
6
10
8
10V
8V
9V
7V
5V
4V
6V
4.5V
3.5V
V
GS=
20V
12V
14V
16V
5V
4V
10V
8V
6V
9V
7V
4.5V
3.5V
V
GS=
20V
12V
14V
16V
0
4
2
6
10
8
20V
14V
ZVN4206A
3-382
TYPICAL CHA RACTERIS TICS
T ransconductance v drain current
I
D
- Drain Current (Amps)
g
fs
-Transconductance (mS)
g
fs
-Transconductance (mS)
V
DS
-Drain Source Voltage (Volts)
Capacitance v drain-source voltage
C-Capacitance (pF)
Q-Charge (nC)
Transconductance v ga te -source voltage
V
GS
-Gate Source Voltage (Volts)
V
GS
-Gate Source Voltage (Volts)
Gate charge v gate-source voltage
0
10
8
6
2
0
4
12
14
16
V
DS
=
20V
I
D=
1.5A
40V 60V
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
012345678910
V
DS=
10V
0
300
200
100
400
800
700
600
500
900
1000
012345678910
V
DS=
10V
0
300
200
100
400
800
700
600
500
900
1000
C
oss
C
iss
C
rss
01020 304050607080
0
120
80
40
160
200
ZVN4206A
3-383