SFT1440
No. A1816-1/9
71 112 TKIM/81 110PE TKIM TC-00002437
SANYO Semiconductors
DATA SHEET
http://semicon.sanyo.com/en/network
Ordering number : ENA1816A
Features
• ON-resistance RDS(on)=6.2Ω(typ.) • Protection diode in
Specifi cations
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage VDSS 600 V
Gate-to-Source Voltage VGSS ±30 V
Drain Current (DC) ID1.5 A
Drain Current (PW≤10μs) IDP PW≤10μs, duty cycle≤1% 6.0 A
Allowable Power Dissipation PD1.0 W
Tc=25°C20W
Channel Temperature Tch 150 °C
Storage Temperature Tstg --55 to +150 °C
Package Dimensions unit : mm (typ) Package Dimensions
unit : mm (typ)
7518-004 7003-004
SFT1440
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
TL
Product & Package Information
• Package : TP • Package : TP-FA
•
JEITA, JEDEC :
SC-64, TO-251 •
JEITA, JEDEC :
SC-63, TO-252
•
Minimum Packing Quantity
:
500 pcs./bag •
Minimum Packing Quantity
:
700 pcs./reel
Marking Packing Type (TP-FA) : TL Electrical Connection
(TP, TP-FA) (TP, TP-FA)
6.5
5.0 2.3 0.5
12
4
3
0.85
0.7 1.2
0.6 0.5
2.3 2.3
7.07.5
1.6
0.8 5.5 1.5
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : TP
6.5
5.0 2.3 0.5
12
4
3
0.85
0.6
0.5
1.2
1.2
2.3 2.3
7.0
2.5
5.5 1.5
0.8
0 to 0.2
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : TP-FA
SFT1440-E SFT1440-TL-E
T1440
LOT No.
1
3
2,4
SFT1440
No. A1816-2/9
Electrical Characteristics at Ta=25°C
Parameter Symbol Conditions Ratings Unit
min typ max
Drain-to-Source Breakdown Voltage V(BR)DSS ID=10mA, VGS=0V 600 V
Zero-Gate Voltage Drain Current IDSS V
DS=480V, VGS=0V 100 μA
Gate-to-Source Leakage Current IGSS VGS=±24V, VDS=0V ±10 μA
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 3.0 5.0 V
Forward T ransfer Admittance | yfs |VDS=10V, ID=0.8A1.0 S
Static Drain-to-Source On-State Resistance
RDS(on)1 ID=0.8A, VGS=10V 6.2 8.1 Ω
Input Capacitance Ciss VDS=30V, f=1MHz 130 pF
Output Capacitance Coss 25 pF
Reverse Transfer Capacitance Crss 4.0 pF
Turn-ON Delay Time td(on)
See specifi ed Test Circuit.
9.1 ns
Rise Time tr 15 ns
Turn-OFF Delay Time td(off) 18 ns
Fall Time tf19 ns
Total Gate Charge Qg VDS=300V, VGS=10V, ID=1.5A 6.3 nC
Gate-to-Source Charge Qgs 1.4 nC
Gate-to-Drain “Miller” Charge Qgd 3.6 nC
Diode Forward Voltage VSD IS=1.5A, VGS=0V 0.85 1.2 V
Switching Time Test Circuit
Ordering Information
Device Package Shipping memo
SFT1440-E TP 500pcs./bag Pb Free
SFT1440-TL-E TP-FA 700pcs./reel
PW=10μs
D.C.≤1%
P.G 50Ω
G
S
D
ID=0.8A
RL=250Ω
VDD=200V
VOUT
VIN
10V
0V
VIN
SFT1440
ID -- VDS ID -- VGS
Drain-to-Source Voltage, VDS -- V
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
Drain Current, ID -- A
0
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
IT15876
13425 15786 9 11 12 13 14100
VDS=10V
25
°
C
IT15875
042 6 8 101214 1816 20
0
2.0
0.6
0.8
0.2
1.8
1.6
1.4
1.2
1.0
0.4
VGS=5V
8V
6V
10V
7V
Tc= --25°C
75
°
C
15V
SFT1440
No. A1816-3/9
| yfs | -- ID
RDS(on) -- VGS RDS(on) -- Tc
SW Time -- ID
Gate-to-Source Voltage, VGS -- V Case Temperature, Tc -- °C
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
Drain Current, ID -- A
Drain Current, ID -- A
Switching Time, SW Time -- ns
Drain-to-Source Voltage, VDS -- V
Ciss, Coss, Crss -- pF
Diode Forward Voltage, VSD -- V
Source Current, IS -- A
Forward T ransfer Admittance, | yfs | -- S
Ciss, Coss, Crss -- VDS
IS -- VSD
VGS -- Qg
Total Gate Charge, Qg -- nC
Gate-to-Source Voltage, VGS -- V
IT15884
A S O
Drain-to-Source Voltage, VDS -- V
Drain Current, ID -- A
0.01
0.1
2
3
5
7
2
3
5
7
2
3
5
7
1.0
1.0 10
23 57 2 100 1000
357 23 75
10 IDP=6.0A (PW≤10μs)
ID=1.5A
Operation in
this area is
limited by RDS(on).
10μs
100μs
1ms
10ms
100ms
DC operation (Ta=25°C)
Tc=25°C
Single pulse
2
20
12
18
16
14
10
8
6
4
2 6 10 14 302622184 8 12 16 282420
IT15877
IT15880
IT15879
1.21.00.4 0.80.60.2
0.001
0.1
5
7
3
2
3
2
2
1.0
5
7
3
0.01
2
5
7
3
3
0.1
0.01
3
2
2
7
5
7
5
1.0
3
2
0.010.001 23 57 0.1
23 57 23 2
1.0
57
Tc= --25
°
C
75°C
25
°
C
Tc=75°C
25°C
--25°C
VGS=0V
ID=0.8A
Ta=25°C
IT15878
--60 --40 --20 1600 20 40 60 80 100 120 140
0
18
6
8
2
4
16
14
12
10
VDS=10V
10
1.0
100
3
2
2
3
7
5
3
2
5
7
5
10
3
100
7
5
7
5
2
0502520 3530 454051015
IT15894
f=1MHz
Coss
Ciss
Crss
IT15893
0.1 2323 57
1.0
td(off)
tf
td(on)
tr
VDD=200V
VGS=10V
7
IT15895
0123 65487
0
2
4
8
12
6
10
14
16 VDS=300V
ID=1.5A
SFT1440
No. A1816-4/9
IT15885
0 20 40 60 80 100 120 140 160
0.2
0
0.4
0.6
0.8
1.0
1.2
Ambient Temperature, Ta -- °C
PD -- Ta
Allowable Power Dissipation, PD -- W
No heat sink
PD -- Tc
Allowable Power Dissipation, PD -- W
Case Temperature, Tc -- °CIT15886
25
20
15
10
5
00 20 40 60 80 100 120 140 160
SFT1440
No. A1816-5/9
Taping Specifi cation
SFT1440-TL-E
SFT1440
No. A1816-6/9
Outline Drawing Land Pattern Example
SFT1440-TL-E
Mass (g) Unit
0.282
* For reference
mm Unit: mm
7.0
1.5
2.3
2.02.5
2.3
7.0
SFT1440
No. A1816-7/9
Bag Packing Specifi cation
SFT1440-E
SFT1440
No. A1816-8/9
Outline Drawing
SFT1440-E
Mass (g) Unit
0.315
* For reference
mm
SFT1440
PS No. A1816-9/9
This catalog provides information as of July, 2012. Specifi cations and information herein are subject
to change without notice.
Note on usage : Since the SFT1440 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment. The products mentioned herein
shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten
human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they
grant any guarantee thereof. If you should intend to use our products for new introduction or other application
different from current conditions on the usage of automotive device, communication device, office equipment,
industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.)
prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be
solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer's
products or equipment.
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating
condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
Co.,Ltd. products described or contained herein.
Regarding monolithic semiconductors, if you should intend to use this IC continuously under high temperature,
high current, high voltage, or drastic temperature change, even if it is used within the range of absolute
maximum ratings or operating conditions, there is a possibility of decrease reliability. Please contact us for a
confirmation.
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semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures
or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give
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