SFT1440 Ordering number : ENA1816A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET SFT1440 General-Purpose Switching Device Applications Features * ON-resistance RDS(on)=6.2(typ.) * Protection diode in Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Drain-to-Source Voltage Conditions Ratings Unit VDSS VGSS Gate-to-Source Voltage Drain Current (DC) ID IDP Drain Current (PW10s) PW10s, duty cycle1% 600 V 30 V 1.5 A 6.0 A 1.0 W Allowable Power Dissipation PD 20 W Channel Temperature Tch 150 C Storage Temperature Tstg --55 to +150 C Tc=25C Package Dimensions unit : mm (typ) Package Dimensions unit : mm (typ) 7518-004 7003-004 5.5 7.0 5.5 4 0.85 0.7 0.5 1.5 4 0.5 0.6 1 2 2.3 7.5 1 1 : Gate 2 : Drain 3 : Source 4 : Drain 2.3 2 3 0 t o 0.2 0.6 0.5 3 2.5 0.8 0.8 1.6 0.85 1.2 SFT1440-TL-E 2.3 6.5 5.0 1.2 SFT1440-E 1.5 0.5 7.0 2.3 6.5 5.0 1.2 2.3 2.3 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : TP-FA SANYO : TP Product & Package Information * Package : TP * JEITA, JEDEC : SC-64, TO-251 * Minimum Packing Quantity : 500 pcs./bag Marking (TP, TP-FA) * Package : TP-FA * JEITA, JEDEC : SC-63, TO-252 * Minimum Packing Quantity : 700 pcs./reel Packing Type (TP-FA) : TL T1440 2,4 Electrical Connection (TP, TP-FA) 1 LOT No. TL 3 http://semicon.sanyo.com/en/network 71112 TKIM/81110PE TKIM TC-00002437 No. A1816-1/9 SFT1440 Electrical Characteristics at Ta=25C Parameter Symbol Ratings Conditions min typ Unit max 600 V(BR)DSS IDSS Gate-to-Source Leakage Current IGSS Cutoff Voltage VGS(off) VGS=24V, VDS=0V VDS=10V, ID=1mA Forward Transfer Admittance | yfs | VDS=10V, ID=0.8A Static Drain-to-Source On-State Resistance RDS(on)1 Ciss ID=0.8A, VGS=10V Input Capacitance Output Capacitance Coss VDS=30V, f=1MHz Reverse Transfer Capacitance Crss Turn-ON Delay Time td(on) 9.1 ns Rise Time tr td(off) 15 ns Turn-OFF Delay Time Fall Time Total Gate Charge tf Qg Gate-to-Source Charge Qgs Gate-to-Drain "Miller" Charge Qgd Diode Forward Voltage VSD ID=10mA, VGS=0V VDS=480V, VGS=0V V Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current 3.0 100 A 10 A 5.0 V 1.0 S 6.2 See specified Test Circuit. VDS=300V, VGS=10V, ID=1.5A 8.1 pF 25 pF 4.0 pF 18 ns 19 ns 6.3 nC 1.4 nC 3.6 IS=1.5A, VGS=0V 130 nC 0.85 1.2 V Switching Time Test Circuit VDD=200V VIN 10V 0V ID=0.8A RL=250 VIN D PW=10s D.C.1% VOUT G SFT1440 P.G 50 S Ordering Information Package Shipping TP 500pcs./bag SFT1440-TL-E TP-FA 700pcs./reel ID -- VDS V 15 Drain Current, ID -- A 1.6 1.6 7V 1.4 1.2 1.0 0.8 0.6 6V 0.4 25C 1.4 75C 1.2 1.0 0.8 0.6 0.4 0.2 0.2 0 VDS=10V 1.8 8V Drain Current, ID -- A 1.8 Pb Free ID -- VGS 2.0 10 V 2.0 memo Tc= --2 5C Device SFT1440-E VGS=5V 0 2 4 6 8 10 12 14 16 Drain-to-Source Voltage, VDS -- V 18 20 IT15875 0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 Gate-to-Source Voltage, VGS -- V IT15876 No. A1816-2/9 SFT1440 RDS(on) -- VGS 20 16 16 Static Drain-to-Source On-State Resistance, RDS(on) -- ID=0.8A 14 12 10 8 6 4 2 4 6 8 10 12 14 16 18 20 22 24 26 Gate-to-Source Voltage, VGS -- V 4 2 3 2 --40 --20 0 20 40 60 80 100 120 140 160 IT15878 IS -- VSD VGS=0V C 5 --2 = Tc C 75 2 0.1 7 5 3 0.1 7 5 3 2 0.01 7 5 --25 C 3 3 2 25C C 25 5 5C 7 Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S 6 1.0 7 5 3 2 2 2 3 5 7 0.01 2 3 5 7 0.1 2 3 Drain Current, ID -- A 0.001 0.2 5 7 1.0 2 IT15879 0.6 0.8 1.0 1.2 IT15880 Ciss, Coss, Crss -- VDS 7 5 VDD=200V VGS=10V 7 0.4 Diode Forward Voltage, VSD -- V SW Time -- ID 100 f=1MHz 3 2 Ciss, Coss, Crss -- pF 5 tf Switching Time, SW Time -- ns 8 Case Temperature, Tc -- C 1.0 0.01 0.001 3 td (off) 2 tr td(on) 10 Ciss 100 7 5 Coss 3 2 10 7 5 Crss 3 7 2 5 0.1 2 3 5 7 2 1.0 Drain Current, ID -- A 10 7 5 Drain Current, ID -- A 12 10 8 6 4 2 3 4 5 10 6 Total Gate Charge, Qg -- nC 7 8 IT15895 15 20 25 30 35 40 45 50 IT15894 ASO IDP=6.0A (PW10s) 10 ID=1.5A 1.0 7 5 DC 1m s 10 10 10 s 0 s m 0m op s s era tio 3 2 Operation in this area is limited by RDS(on). 0.1 7 5 3 2 2 1 5 Drain-to-Source Voltage, VDS -- V 3 2 0 0 IT15893 VDS=300V ID=1.5A 14 0 1.0 3 VGS -- Qg 16 Gate-to-Source Voltage, VGS -- V 10 0 --60 30 VDS=10V 2 12 IT15877 | yfs | -- ID 3 28 14 Tc= 7 Static Drain-to-Source On-State Resistance, RDS(on) -- 18 2 RDS(on) -- Tc 18 Ta=25C n( Ta =2 5 C ) Tc=25C Single pulse 0.01 1.0 2 3 5 7 10 2 3 5 7 100 2 Drain-to-Source Voltage, VDS -- V 3 5 7 1000 IT15884 No. A1816-3/9 SFT1440 PD -- Ta 1.0 0.8 No he at 0.6 sin k 0.4 0.2 0 0 20 40 60 80 100 PD -- Tc 25 Allowable Power Dissipation, PD -- W Allowable Power Dissipation, PD -- W 1.2 120 Ambient Temperature, Ta -- C 140 160 IT15885 20 15 10 5 0 0 20 40 60 80 100 120 Case Temperature, Tc -- C 140 160 IT15886 No. A1816-4/9 SFT1440 Taping Specification SFT1440-TL-E No. A1816-5/9 SFT1440 Outline Drawing SFT1440-TL-E Land Pattern Example Mass (g) Unit 0.282 mm * For reference Unit: mm 7.0 7.0 2.5 2.0 1.5 2.3 2.3 No. A1816-6/9 SFT1440 Bag Packing Specification SFT1440-E No. A1816-7/9 SFT1440 Outline Drawing SFT1440-E Mass (g) Unit 0.315 mm * For reference No. A1816-8/9 SFT1440 Note on usage : Since the SFT1440 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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