N February 1996 NDS9948 Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed. -2.3A, -60V. RDS(ON) = 0.25 @ VGS = -10V. High density cell design for low RDS(ON). High power and current handling capability in a widely used surface mount package. Dual MOSFET in surface mount package. ______________________________________________________________________________ Absolute Maximum Ratings Symbol Parameter VDSS Drain-Source Voltage VGSS Gate-Source Voltage ID Drain Current - Continuous PD 6 3 7 2 8 1 TA = 70C NDS9948 Units -60 V 20 V (Note 1a) 2.3 A (Note 1a) 1.8 10 TA = 25C Power Dissipation for Dual Operation Power Dissipation for Single Operation 2 (Note 1a) 1.6 (Note 1b) 1 (Note 1c) TJ,TSTG 4 T A = 25C unless otherwise noted - Continuous TA = 25C - Pulsed 5 Operating and Storage Temperature Range W 0.9 -55 to 150 C THERMAL CHARACTERISTICS RJA Thermal Resistance, Junction-to-Ambient (Note 1a) 78 C/W RJC Thermal Resistance, Junction-to-Case (Note 1) 40 C/W NDS9948.SAM Electrical Characteristics (TA = 25C unless otherwise noted) Symbol Parameter Conditions Min -60 Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 A IDSS Zero Gate Voltage Drain Current VDS = -40 V, VGS = 0 V V TJ = 55C -2 A -25 A IGSSF Gate - Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA IGSSR Gate - Body Leakage, Reverse VGS = -20V, VDS= 0 V -100 nA -3 V ON CHARACTERISTICS (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 A RDS(ON) Static Drain-Source On-Resistance VGS = -10 V, ID = -2.3 A -1 TJ =125C -0.8 TJ =125C VGS = -4.5 V, ID = -1.6 A -2.4 -2 -2.6 0.21 0.25 0.3 0.4 0.36 0.5 -10 ID(on) On-State Drain Current VGS = -10 V, VDS = -5 V gFS Forward Transconductance VDS = -15 V, ID = -2.3 A 3.5 A S VDS = -25 V, VGS = 0 V, f = 1.0 MHz 570 pF 140 pF 40 pF DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance SWITCHING CHARACTERISTICS (Note 2) tD(on) Turn - On Delay Time tr Turn - On Rise Time tD(off) tf Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = -30 V, ID = -1 A, VGEN = -10 V, RGEN = 6 8 15 ns 20 40 ns Turn - Off Delay Time 20 40 ns Turn - Off Fall Time 5 20 ns 16 25 nC 2 5 nC 4 8 nC VDS = -30 V, ID = -2.3 A, VGS = -10 V NDS9948.SAM Electrical Characteristics (TA = 25C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units -1.7 A -0.98 -1.2 V DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS Maximum Continuous Drain-Source Diode Forward Current VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = -2.3 A (Note 2) Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. PD(t ) = TJ -TA ) R JA(t = TJ -TA R JC+RCA(t ) = I 2D (t ) x RDS(ON ) TJ Typical RJA for single device operation using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment: a. 78oC/W when mounted on a 0.5 in2 pad of 2oz cpperr. b. 125oC/W when mounted on a 0.02 in2 pad of 2oz cpper. c. 135oC/W when mounted on a 0.003 in2 pad of 2oz cpper. 1a 1b 1c Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%. NDS9948.SAM Typical Electrical Characteristics 3 -12 GS = -10V -8.0 V -7.0 GS -9 R DS(on), NORMALIZED I D , DRAIN-SOURCE CURRENT (A) -6.0 -5.5 -5.0 -6 -4.5 -3 -4.0 DRAIN-SOURCE ON-RESISTANCE V = -4.0V -4.5 -5.0 2.5 -5.5 2 -6.0 1.5 -7.0 -8.0 1 -10 -3.5 0 0 -1 -2 -3 -4 VDS , DRAIN-SOURCE VOLTAGE (V) -5 0.5 -6 0 Figure 1. On-Region Characteristics. R DS(ON), NORMALIZED 1 0.8 -25 0 25 50 75 100 T , JUNCTION TEMPERATURE (C) 125 DRAIN-SOURCE ON-RESISTANCE 1.2 2 TJ = 125C 25C 1 -55C 0 150 0 -3 -6 I D Figure 3. On-Resistance Variation with Temperature. -9 -12 -15 , DRAIN CURRENT (A) Figure 4. On-Resistance Variation with Drain Current and Temperature. 1.2 -10 V DS = -10V T = -55C J 25C 125C V th, NORMALIZED -8 -6 -4 -2 0 -2 -3 V GS -4 -5 -6 , GATE TO SOURCE VOLTAGE (V) Figure 5. Drain Current Variation with Gate Voltage and Temperature. -7 GATE-SOURCE THRESHOLD VOLTAGE (V) R DS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE -15 V GS = -10 V V GS = -10V J ID , DRAIN CURRENT (A) -12 3 I D = -2.3A 0.6 -50 -6 -9 ID , DRAIN CURRENT (A) Figure 2. On-Resistance Variation with Gate Voltage and Drain Current. 1.6 1.4 -3 V DS = V GS 1.1 I D = -250A 1 0.9 0.8 0.7 -50 -25 0 25 50 75 100 T J , JUNCTION TEMPERATURE (C) 125 150 Figure 6. Gate Threshold Variation with Temperature. NDS9948.SAM Typical Electrical Characteristics (continued) 10 5 I D = -250A -I S , REVERSE DRAIN CURRENT (A) BV DSS, NORMALIZED DRAIN-SOURCE BREAKDOWN VOLTAGE (V) 1.15 1.1 1.05 1 0.95 0.9 -50 -25 0 TJ 25 50 75 100 , JUNCTION TEMPERATURE (C) 125 V GS = 0V 1 125C 0.5 25C T J = -55C 0.1 0.01 0.001 -0.3 150 -0.6 -0.9 V Figure 7. Breakdown Voltage Variation with Temperature. , GATE-SOURCE VOLTAGE (V) 300 C oss 200 100 -2.1 V GS = 0V 0.2 C rss -20V 6 4 2 GS f = 1 MHz 30 0.5 1 2 5 10 -V DS , DRAIN TO SOURCE VOLTAGE (V) 20 0 50 0 5 15 t on t d(on) toff tr RL t d(off) tf 90% 90% V OUT D 20 Figure 10. Gate Charge Characteristics. -VDD V IN 10 Q g , GATE CHARGE (nC) Figure 9. Capacitance Characteristics. R GEN -30V 8 -V 50 VDS = -10V IDS = -2.3A 500 CAPACITANCE (pF) -1.8 10 C iss VGS -1.5 Figure 8. Body Diode Forward Voltage Variation with Current and Temperature. 1000 20 0.1 -1.2 , BODY DIODE FORWARD VOLTAGE (V) SD VOUT 10% 10% DUT G 90% S V IN 50% 50% 10% PULSE WIDTH Figure 11. Switching Test Circui.t INVERTED Figure 12. Switching Waveforms. NDS9948.SAM Typical Electrical Characteristics (continued) 20 10 10 TJ = -55C V DS = -15V 1m 5 -I D, DRAIN CURRENT (A) 25C 4 125C 2 2 RD S( ON I )L T MI 10 10 1 1s 0.5 0m m 0u s s s s DC V 0.1 GS = -10V SINGLE PULSE R J A = 100 o C/W 0.05 T A = 25C g FS , TRANSCONDUCTANCE (SIEMENS) 6 0.01 0.1 0 0 -2 -4 -6 I D , DRAIN CURRENT (A) -8 -10 0.2 0.5 - V Figure 13. Transconductance Variation with Drain Current and Temperature. 1 DS 2 5 10 60 100 , DRAIN-SOURCE VOLTAGE (V) Figure 14. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 0 .5 D = 0.5 0 .2 0.2 0 .1 0 .0 5 0 .0 2 R JA (t) = r(t) * R JA R JA = See Note 1c 0.1 0.05 P(pk) 0.02 0.01 0 .0 1 t1 Single Pulse 0 .0 0 5 t2 TJ - T = P * R JA (t) Duty Cycle, D = t 1 / t 2 A 0 .0 0 2 0 .0 0 1 0 .0001 0 .001 0 .0 1 0 .1 1 10 100 300 t 1 , TIME (sec) Figure 15. Transient Thermal Response Curve. Note: Thermal characterization performed using the conditions described in note 1c. Transient thermal response will change depending on the circuit board design. NDS9948.SAM