2N5190 - ON Semiconductor - Datasheet.Support

March, 2006 − Rev. 12 1Publication Order Number:

2N5191/D

2N5190, 2N5191, 2N5192

Silicon NPN Power

Transistors

Silicon NPN power transistors are for use in power amplifier and

switching circuits, — excellent safe area limits. Complement to PNP

2N5194, 2N5195.

Features

•ESD Ratings: Machine Model, C; > 400 V

Human Body Model, 3B; > 8000 V

•Epoxy Meets UL 94 V−0 @ 0.125 in.

•Pb−Free Packages are Available*

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector−Emitter V oltage 2N5190

2N5191

2N5192

VCEO 40

Vdc

Collector−Base Voltage 2N5190

2N5191

2N5192

VCBO 40

Vdc

Emitter−Base Voltage VEBO 5.0 Vdc

Collector Current IC4.0 Adc

Base Current IB1.0 Adc

Total Device Dissipation @ T C = 25°C

Derate above 25°CPD40

320 W

mW/°C

Operating and Storage Junction

Temperature Range TJ, Tstg –65 to +150 °C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction−to−Case RqJC 3.12 °C/W

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

http://onsemi.com

Device Package Shipping†

2N5190 TO−225AA 500 Units/Box

4.0 AMPERES

NPN SILICON

POWER TRANSISTORS

40, 60, 80 VOLTS − 40 WATTS

Y = Year

WW = Work Week

2N519x = Device Code

x = 0, 1, or 2

G = Pb−Free Package

2N5191G TO−225AA

(Pb−Free) 500 Units/Box

2N5192 TO−225AA 500 Units/Box

TO−225AA

CASE 77

STYLE 1

MARKING DIAGRAM

YWW

N519xG

321

2N5191 TO−225AA 500 Units/Box

ORDERING INFORMATION

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

2N5192G TO−225AA

(Pb−Free) 500 Units/Box

2N5190G TO−225AA

(Pb−Free) 500 Units/Box

2N5190, 2N5191, 2N5192

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ELECTRICAL CHARACTERISTICS* (TC = 25_C unless otherwise noted)

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage (Note 1)

(IC = 0.1 Adc, IB = 0) 2N5190

2N5191

2N5192

VCEO(sus) 40

−

Vdc

Collector Cutoff Current

(VCE = 40 Vdc, IB = 0) 2N5190

(VCE = 60 Vdc, IB = 0) 2N5191

(VCE = 80 Vdc, IB = 0) 2N5192

ICEO −

−

1.0

mAdc

Collector Cutoff Current

(VCE = 40 Vdc, VEB(off) = 1.5 Vdc) 2N5190

(VCE = 60 Vdc, VEB(off) = 1.5 Vdc) 2N5191

(VCE = 80 Vdc, VEB(off) = 1.5 Vdc) 2N5192

(VCE = 40 Vdc, VEB(off) = 1.5 Vdc, TC = 125_C) 2N5190

(VCE = 60 Vdc, VEB(off) = 1.5 Vdc, TC = 125_C) 2N5191

(VCE = 80 Vdc, VEB(off) = 1.5 Vdc, TC = 125_C) 2N5192

ICEX −

−

0.1

2.0

mAdc

Collector Cutoff Current

(VCB = 40 Vdc, IE = 0) 2N5190

(VCB = 60 Vdc, IE = 0) 2N5191

(VCB = 80 Vdc, IE = 0) 2N5192

ICBO −

−

0.1

mAdc

Emitter Cutoff Current

(VBE = 5.0 Vdc, IC = 0) IEBO − 1.0 mAdc

ON CHARACTERISTICS (Note 1)

DC Current Gain

(IC = 1.5 Adc, VCE = 2.0 Vdc) 2N5190/2N5191

2N5192

(IC = 4.0 Adc, VCE = 2.0 Vdc) 2N5190/2N5191

2N5192

hFE 25

7.0

100

−

Collector−Emitter Saturation Voltage

(IC = 1.5 Adc, IB = 0.15 Adc)

(IC = 4.0 Adc, IB = 1.0 Adc)

VCE(sat) −

−0.6

1.4 Vdc

Base−Emitter On Voltage

(IC = 1.5 Adc, VCE = 2.0 Vdc) VBE(on) − 1.2 Vdc

DYNAMIC CHARACTERISTICS

Current−Gain — Bandwidth Product

(IC = 1.0 Adc, VCE = 10 Vdc, f = 1.0 MHz) fT2.0 − MHz

*JEDEC Registered Data.

1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.

2N5190, 2N5191, 2N5192

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VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)

Figure 1. DC Current Gain

IC, COLLECTOR CURRENT (AMP)

0.1

0.004

7.0

5.0

1.0

0.7

0.5

0.3

0.007 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 4.0

VCE = 2.0 V

VCE = 10 V

Figure 2. Collector Saturation Region

IB, BASE CURRENT (mA)

2.0

0.05

1.6

1.2

0.8

0.4

0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 10 500

IC = 10 mA

2.0 3.0

TJ = 150°C

−55 °C

25°C

3.0

2.0

0.2

hFE, DC CURRENT GAIN (NORMALIZED)

5.0 7.0 20 30 50 70 100 200 300

100 mA 1.0 A 3.0 A

TJ = 25°C

2.0

0.005

IC, COLLECTOR CURRENT (AMP)

0.01 0.02 0.03 0.05 0.2 0.3 1.0 2.0 4.0

1.6

1.2

0.8

0.4

TJ = 25°C

VBE(sat) @ IC/IB = 10

VCE(sat) @ IC/IB = 10

Figure 3. “On” Voltages

0.1 0.5 3.0

VBE @ VCE = 2.0 V

+2.5

Figure 4. Temperature Coefficients

IC, COLLECTOR CURRENT (AMP)

TJ = −65°C to +150°C

V, TEMPERATURE COEFFICIENTS (mV/ C)°θ

+2.0

+1.5

+0.5

−0.5

−1.0

−1.5

−2.0

−2.5

qV for VBE

*qV for VCE(sat)

*APPLIES FOR IC/IB ≤hFE@VCE +2.0V

+1.0

0.005 0.01 0.02 0.03 0.05 0.2 0.3 1.0 2.0 4.00.1 0.5 3.0

2N5190, 2N5191, 2N5192

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RBE, EXTERNAL BASE−EMITTER RESISTANCE (OH

103

−0.4

Figure 5. Collector Cut−Off Region

VBE, BASE−EMITTER VOLTAGE (VOLTS)

102

101

100

10−1

10− 2

10− 3

−0.3 −0.2 −0.1 0 +0.1 +0.2 +0.3 +0.4 +0.5 +0.6

VCE = 30 V

TJ = 150°C

100°C

25°C

REVERSE FORWARD

ICES

107

Figure 6. Effects of Base−Emitter Resistance

TJ, JUNCTION TEMPERATURE (°C)

40 60 80 100 120 140 16

106

105

104

103

102

VCE = 30 V

IC = 10 x ICES

IC = 2 x ICES

IC ≈ICES

(TYPICAL ICES VALUES

OBTAINED FROM FIGURE 5)

Figure 7. Switching Time Equivalent Test Circuit

APPROX

+11 V

TURN−ON PULSE

Vin

VEB(off)

TURN−OFF PULSE

Vin

APPROX

+11 V

VCC

SCOPE

Cjd<<Ceb

−4.0 V

t1 ≤ 7.0 ns

100 < t2 < 500 ms

t3 < 15 ns

DUTY CYCLE ≈ 2.0%

APPROX −9.0 V

Vin

RB and RC varied

to obtain desired

current levels

300

0.1

VR, REVERSE VOLTAGE (VOLTS)

0.2 0.3 0.5 1.0 3.0 5.0 20 40

200

100

TJ = +25°C

CAPACITANCE (pF)

Figure 8. Capacitance

2.0 10 30

Ceb

Ccb

2.0

0.05

Figure 9. Turn−On Time

IC, COLLECTOR CURRENT (AMP)

1.0

0.7

0.5

0.3

0.2

0.1

0.02 0.07 0.1 0.2 0.3 1.0 2.0 4.0

tr @ VCC = 30 V

IC/IB = 10

TJ = 25°C

0.03

0.5

0.05

0.07

0.7 3.0

tr @ VCC = 10 V

td @ VEB(off) = 2.0 V

2.0

0.05

Figure 10. Turn−Off Time

IC, COLLECTOR CURRENT (AMP)

1.0

0.7

0.5

0.3

0.2

0.1

0.02 0.07 0.1 0.2 0.3 1.0 2.0 4.0

tf @ VCC = 30 V

IB1 = IB2

IC/IB = 10

ts′ = ts − 1/8 tf

TJ = 25°C

0.03

t, TIME (s)μ

0.5

0.05

0.07

0.7 3.0

tf @ VCC = 10 V

ts′

2N5190, 2N5191, 2N5192

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1.0

Figure 11. Rating and Thermal Data

Active−Region Safe Operating Area

VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)

5.0

2.0

1.0

0.5

0.1 2.0 5.0 10 20 50 10

SECONDARY BREAKDOWN LIMIT

THERMAL LIMIT AT TC = 25°C

BONDING WIRE LIMIT

0.2

IC, COLLECTOR CURRENT (AMP)

CURVES APPLY BELOW RATED VCEO

TJ = 150°C

1.0ms

100ms

2N5191

2N5192

5.0ms

There are two limitations on the power handling ability of

a transistor; average junction temperature and second

breakdown. Safe operating area curves indicate IC − VCE

limits of the transistor that must be observed for reliable

operation; i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

The data of Figure 11 is based on TJ(pk) = 150_C; TC is

variable depending on conditions. Second breakdown pulse

limits are valid for duty cycles to 10% provided TJ(pk)

v 150_C. At high case temperatures, thermal limitations

will reduce the power that can be handled to values less than

the limitations imposed by second breakdown.

Figure 12. Thermal Response

t, TIME OR PULSE WIDTH (ms)

1.0

0.01

0.7

0.5

0.3

0.2

0.1

0.07

0.05

0.03

0.02

0.02 0.03

r(t), EFFECTIVE TRANSIENT

THERMAL RESISTANCE (NORMALIZED)

0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 50 100 200 1000500

qJC(max) = 3.12°C/W  2N5190−92

D = 0.5

0.2

0.05

0.02

0.01

SINGLE PULSE

0.1

DESIGN NOTE: USE OF TRANSIENT THERMAL RESISTANCE DATA

PPPP

1/f

DUTY CYCLE, D = t1 f − t1

PEAK PULSE POWER = PP

Figure A

A train of periodical power pulses can be represented by

the model shown in Figure A. Using the model and the

device thermal response, the normalized effective transient

thermal resistance of Figure 12 was calculated for various

duty cycles.

T o find qJC(t), multiply the value obtained from Figure 12

by the steady state value qJC.

Example:

The 2N5190 is dissipating 50 watts under the following

conditions: t1 = 0.1 ms, tp = 0.5 ms. (D = 0.2).

Using Figure 12, at a pulse width of 0.1 ms and D = 0.2,

the reading of r(t1, D) is 0.27.

The peak rise in function temperature is therefore:

DT = r(t) x PP x qJC = 0.27 x 50 x 3.12 = 42.2_C

2N5190, 2N5191, 2N5192

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PACKAGE DIMENSIONS

TO−225AA

CASE 77−09

ISSUE Z

STYLE 1:

PIN 1. EMITTER

2. COLLECTOR

3. BASE

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. 077−01 THRU −08 OBSOLETE, NEW STANDARD

077−09.

−B−

−A− M

132

2 PL

0.25 (0.010) B M

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.425 0.435 10.80 11.04

B0.295 0.305 7.50 7.74

C0.095 0.105 2.42 2.66

D0.020 0.026 0.51 0.66

F0.115 0.130 2.93 3.30

G0.094 BSC 2.39 BSC

H0.050 0.095 1.27 2.41

J0.015 0.025 0.39 0.63

K0.575 0.655 14.61 16.63

M5 TYP 5 TYP

Q0.148 0.158 3.76 4.01

R0.045 0.065 1.15 1.65

S0.025 0.035 0.64 0.88

U0.145 0.155 3.69 3.93

V0.040 −−− 1.02 −−−

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2N5191/D

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