PD10M441L PD10M440L P2H10M441L P2H10M440L MOSFET 70A 450 450500V PD10M441L/440L P2H10M441L/440L 108.0 108.0 Approximate Weight :220g Approximate Weight :220g Maximum Ratings Rating VDSS Drain-Source Voltage Gate-Source Voltage Duty=50% Continuous Drain Current D.C. Pulsed Drain Current Total Power Dissipation Operating Junction Temperature Range Storage Temperature Range RMS Isolation Voltage 1 Mounting Torque Symbol Grade PD10M441L/P2H10M441L PD10M440L/P2H10M440L Unit 450 500 V VGS=0V VGSS 20 V ID 70c=25 50c=25 A IDM 140c=25 A PD 500c=25 W Tjw -40+150 Tstg -40+125 Viso Ftor 2000 - ,AC1 Terminals to Base, AC 1 min . 3.0 Module Base to Heat sink 2.0 Bus bar to Main Terminals http://store.iiic.cc/ V Nm Electrical CharacteristicsTC25 unless otherwise noted Characteristic Symbol Zero Gate Voltage Drain Current Gate-Source Threshold Voltage Gate-Source Leakage Current MOSFET Static Drain-Source On-Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Maximum Value Min. Typ. Max. Unit VDSVDSS, VGS0V 1 Tj125, VDSVDSS, VGS0V 4 VDSVGS, ID1mA 2 3.1 4 V VGS20V, VDS0V 1 A rDS on VGS10V, ID40A 75 85 m gfg VDS15V, ID40A 65 S 13 nF 2.2 nF Crss 0.45 nF ton d 140 ns 110 ns 300 ns 50 ns IDSS VGS th IGSS Ciss Coss tr toff d VGS0V VDS25V f1MHz VDD1/2VDSS ID25A VGS-5V, 10V RG7 tf mA Source-Drain Diode Ratings and CharacteristicsTC25 unless otherwise noted Characteristic Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Condition Symbol IS Condition D. C. ISM VSD trr Qr IS70A IS70A -diS/dt100A/s Maximum Value Min. Typ. Max. Unit 50 A 140 A 2.0 V 1100 ns 36 C Thermal Characteristics Characteristic Symbol - Thermal Resistance, Junction to Case Rthj-c - Thermal Resistance, Case to Heatsink Rthc-f Condition Maximum Value Min. Typ. Max. MOSFET 0.25 Diode 0.25 Mounting surface flat, smooth, and greased 0.1 323 http://store.iiic.cc/ Unit /W Fig. 2 Typical Drain-Source On-Voltage Fig. 2 Vs. Gate-Source Voltage TC=25i 250 s Pulse Test 10V 6V 80 60 40 VGS=5V 20 0 4V 2 4 6 8 10 DRAIN TO SOURCE VOLTAGE VDS (V) 0 VGS=0V f=1kHz Ciss Coss 6 0 Crss 1 2 5 10 20 50 DRAIN TO SOURCE VOLTAGE VDS (V) 2 20A 0 4 8 12 GATE TO SOURCE VOLTAGE VGS (V) 40A 20A 0.1 0 40 80 120 JUNCTION TEMPERATURE Tj ( ) 160 Fig. 6 Typical Switching Time Fig. 6 Vs. Series Gate impedance ID=50A ID=40A VDD=250V TC=25i 80 s Pulse Test 10 VDD= 100V 250V 400V 5 8 4 2 1 toff 0.5 ton 0.2 0 100 200 300 400 500 TOTAL GATE CHRAGE Qg (nC) 0.1 600 Fig. 8 Typical Source-Drain Diode Forward Fig. 8 Characteristics RG=7 VDD=250V TC=25i 80 s Pulse Test ID=85A 0.2 0 -40 16 12 0 100 Fig. 7 Typical Switching Time Fig. 7 Vs. Drain Current 1000 40A 16 GATE TO SOURCE VOLTAGE VGS (V) CAPACITANCE C (nF) 24 12 4 Fig. 5 Typical Gate Charge Fig. 5 Vs. Gate-Source Voltage 30 18 ID=85A 6 0 12 Fig. 4 Typical Capacitance Fig. 4 Vs. Drain-Source Voltage 10 8 VGS=10V 250 s Pulse Test SWITCHING TIME t ( s) DRAIN CURRENT ID (A) 100 TC=25i 250 s Pulse Test 12 DRAIN TO SOURCE ON VOLTAGE VDS (on)(V) 120 Fig. 3 Typical Drain-Source On Voltage Fig. 3 Vs. Junction Temperature DRAIN TO SOURCE ON VOLTAGE VDS (on)(V) Fig. 1 Typical Output Characteristics 2 5 10 20 50 100 SERIES GATE IMPEDANCE RG ( ) Fig. 9 Typical Reverse Recovery Characteristics 250 s Pulse Test 120 200 IS=70A IS=40A Tj=150i REVERSE RECOVERY TIME trr (ns) REVERSE CURRENT IR (A) 2000 500 100 SOURCE CURRENT IS (A) 200 td(on) 100 tr tf 50 Tj=125i Tj=25i 40 5 2 10 20 50 100 200 500 200 IR 100 200 100 0 0 0.2 0.4 0.6 0.8 1.0 SOURCE TO DRAIN VOLTAGE VSD (V) 10 s 50 100 s 20 10 1ms 2 200 5 2 10 -1 Per Unit Base Rth(j-c)=0.25i/W 1 Shot Pulse 5 2 10 -2 -5 10 10 -4 10 -3 10 -2 10 -1 PULSE DURATION t (s) DC 1 100 2 10ms 1 0 10 0 5 2 1.2 Fig. 11 Normalized Transient Thermal impedance(MOSFET) TC=25i Tj=150iMAX Single Pulse Operation in this area is limited by RDS (on) 500 0.5 trr 50 Fig. 10 Maximum Safe Operating Area DRAIN CURRENT ID (A) 60 20 20 10 1000 80 NORMALIZED TRANSIENT THERMAL IMPEDANCE [rth(j-c) / Rth(j-c)] SWITCHING TIME t (ns) td(off) -441L -440L 50 100 200 500 1000 5 10 20 DRAIN TO SOURCE VOLTAGE VDS (V) - 308 http://store.iiic.cc/ 10 0 10 1 300 400 -dis/dt (A/ s) 500 600 M O S F E T