Semiconductor Components Industries, LLC, 2011
November, 2011 Rev. 6
1Publication Order Number:
MMBT2222AWT1/D
MMBT2222AWT1G,
SMMBT2222AWT1G
General Purpose Transistor
NPN Silicon
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT323/SC70 package which
is designed for low power surface mount applications.
Features
AECQ101 Qualified and PPAP Capable
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS
Rating Symbol Value Unit
CollectorEmitter Voltage VCEO 40 Vdc
CollectorBase Voltage VCBO 75 Vdc
EmitterBase Voltage VEBO 6.0 Vdc
Collector Current Continuous IC600 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR5 Board
TA = 25C
PD150 mW
Thermal Resistance, JunctiontoAmbient RqJA 833 C/W
Junction and Storage Temperature TJ, Tstg 55 to +150 C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Device Package Shipping
ORDERING INFORMATION
SC70
CASE 419
STYLE 3
MARKING DIAGRAM
COLLECTOR
3
1
BASE
2
EMITTER
http://onsemi.com
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
MMBT2222AWT1G SC70
(PbFree)
3,000 /
Tape & Reel
(Note: Microdot may be in either location)
SMMBT2222AWT1G SC70
(PbFree)
3,000 /
Tape & Reel
P1 MG
G
P1 = Specific Device Code
M = Date Code
G= PbFree Package
1
MMBT2222AWT1G, SMMBT2222AWT1G
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage (Note 1)
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO 40
Vdc
CollectorBase Breakdown Voltage
(IC = 10 mAdc, IE = 0)
V(BR)CBO 75
Vdc
EmitterBase Breakdown Voltage
(IE = 10 mAdc, IC = 0)
V(BR)EBO 6.0
Vdc
Base Cutoff Current
(VCE = 60 Vdc, VEB = 3.0 Vdc)
IBL
20
nAdc
Collector Cutoff Current
(VCE = 60 Vdc, VEB = 3.0 Vdc)
ICEX
10
nAdc
ON CHARACTERISTICS (Note 1)
DC Current Gain (Note 1)
(IC = 0.1 mAdc, VCE = 10 Vdc)
(IC = 1.0 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc)
(IC = 150 mAdc, VCE = 10 Vdc)
(IC = 500 mAdc, VCE = 10 Vdc)
HFE 35
50
75
100
40
300
CollectorEmitter Saturation Voltage (Note 1)
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
VCE(sat)
0.3
1.0
Vdc
Base Emitter Saturation Voltage (Note 1)
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
VBE(sat) 0.6
1.2
2.0
Vdc
SMALLSIGNAL CHARACTERISTICS
CurrentGain Bandwidth Product
(IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz)
fT300
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cobo
8.0
pF
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Cibo
30
pF
Input Impedance
(VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz)
hie 0.25 1.25
kW
Voltage Feedback Ratio
(VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz)
hre
4.0
X 104
SmallSignal Current Gain
(VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz)
hfe 75 375
Output Admittance
(VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz)
hoe 25 200
mmhos
Noise Figure
(VCE = 10 Vdc, IC = 100 mAdc, RS = 1.0 kW, f = 1.0 kHz)
NF
4.0
dB
SWITCHING CHARACTERISTICS
Delay Time (VCC = 3.0 Vdc, VBE = 0.5 Vdc,
IC = 150 mAdc, IB1 = 15 mAdc)
td10
ns
Rise Time tr25
Storage Time (VCC = 30 Vdc, IC = 150 mAdc,
IB1 = IB2 = 15 mAdc)
ts225 ns
Fall Time tf60
1. Pulse Test: Pulse Width v300 ms, Duty Cycle v2.0%.
MMBT2222AWT1G, SMMBT2222AWT1G
http://onsemi.com
3
Figure 1. TurnOn Time Figure 2. TurnOff Time
SWITCHING TIME EQUIVALENT TEST CIRCUITS
Scope rise time < 4 ns
*Total shunt capacitance of test jig, connectors, and oscilloscope.
+16 V
-2 V < 2 ns
0
1.0 to 100 ms,
DUTY CYCLE 2.0%
1 kW
+30 V
200
CS* < 10 pF
+16 V
-14 V
0
< 20 ns
1.0 to 100 ms,
DUTY CYCLE 2.0%
1 k
+30 V
200
CS* < 10 pF
-4 V
1N914
1000
10
20
30
50
70
100
200
300
500
700
1.0 k0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 500 700
IC, COLLECTOR CURRENT (mA)
Figure 3. DC Current Gain
hFE, DC CURRENT GAINVCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
1.0
0.8
0.6
0.4
0.2
0
0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30
50
IB, BASE CURRENT (mA)
Figure 4. Collector Saturation Region
TJ = 125C
TJ = 25C
25C
-55C
IC = 1.0 mA 10 mA 150 mA 500 mA
VCE = 1.0 V
VCE = 10 V
MMBT2222AWT1G, SMMBT2222AWT1G
http://onsemi.com
4
Figure 5. Turn On Time
IC, COLLECTOR CURRENT (mA)
70
100
200
50
t, TIME (ns)
10 20 70
5.0
100
5.0 7.0 30 50 200
10
30
7.0
20
IC/IB = 10
TJ = 25C
tr @ VCC = 30 V
td @ VEB(off) = 2.0 V
td @ VEB(off) = 0
3.0
2.0
300 500
500
t, TIME (ns)
5.0
7.0
10
20
30
50
70
100
200
300
Figure 6. Turn Off Time
IC, COLLECTOR CURRENT (mA)
10 20 70 1005.0 7.0 30 50 200 300 500
VCC = 30 V
IC/IB = 10
IB1 = IB2
TJ = 25C
ts = ts - 1/8 tf
tf
Figure 7. Frequency Effects
f, FREQUENCY (kHz)
4.0
6.0
8.0
10
2.0
0.1
Figure 8. Source Resistance Effects
RS, SOURCE RESISTANCE (OHMS)
NF, NOISE FIGURE (dB)
1.0 2.0 5.0 10 20 50
0.2 0.5
0
100
NF, NOISE FIGURE (dB)
0.01 0.02 0.05
RS = OPTIMUM
RS = SOURCE
RS = RESISTANCE
IC = 1.0 mA, RS = 150 W
500 mA, RS = 200 W
100 mA, RS = 2.0 kW
50 mA, RS = 4.0 kW
f = 1.0 kHz
IC = 50 mA
100 mA
500 mA
1.0 mA
4.0
6.0
8.0
10
2.0
0
50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k
Figure 9. Capacitances
REVERSE VOLTAGE (VOLTS)
3.0
5.0
7.0
10
2.0
0.1
CAPACITANCE (pF)
1.0 2.0 3.0 5.0 7.0 10 20 30 50
0.2 0.3 0.5 0.7
Ccb
20
30
Ceb
Figure 10. CurrentGain Bandwidth Product
IC, COLLECTOR CURRENT (mA)
70
100
200
300
50
500
fT, CURRENT-GAIN BANDWIDTH PRODUCT (MHz)
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
VCE = 20 V
TJ = 25C
MMBT2222AWT1G, SMMBT2222AWT1G
http://onsemi.com
5
Figure 11. Collector Emitter Saturation Voltage
vs. Collector Current
Figure 12. Base Emitter Saturation Voltage vs.
Collector Current
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
10.10.010.001
0.01
0.1
1
10.10.010.001
0.2
0.3
0.5
0.7
0.8
1.0
1.1
1.3
Figure 13. Base Emitter Voltage vs. Collector
Current
IC, COLLECTOR CURRENT (A)
10.10.010.001
0.2
0.3
0.5
0.6
0.7
0.9
1.1
1.2
VCE(sat), COLLECTOREMITTER
SATURATION VOLTAGE (V)
VBE(sat), BASEEMITTER
SATURATION VOLTAGE (V)
VBE(on), BASEEMITTER VOLTAGE (V)
IC/IB = 10
150C
55C
25C0.4
0.6
0.9
1.2 IC/IB = 10
150C
55C
25C
0.4
0.8
1.0
VCE = 1 V
150C
55C
25C
Figure 14. Temperature Coefficients
IC, COLLECTOR CURRENT (mA)
-0.5
0
+0.5
COEFFICIENT (mV/ C)
-1.0
-1.5
-2.5
RqVC for VCE(sat)
RqVB for VBE
-2.0
0.1 1.0 2.0 5.0 10 20 500.2 0.5 100 200 50
0
Figure 15. Safe Operating Area
VCE (Vdc)
1001010.10.01
0.001
0.01
0.1
1
10
IC (A)
Single Pulse Test
@ TA = 25C
Thermal Limit
100 ms
1 s
10 ms
1 ms
MMBT2222AWT1G, SMMBT2222AWT1G
http://onsemi.com
6
PACKAGE DIMENSIONS
SC70 (SOT323)
CASE 41904
ISSUE N
AA2
D
e1
b
e
E
A1
c
L
3
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
0.05 (0.002)
1.9
0.075
0.65
0.025
0.65
0.025
0.9
0.035
0.7
0.028 ǒmm
inchesǓ
SCALE 10:1
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
HE
DIM
A
MIN NOM MAX MIN
MILLIMETERS
0.80 0.90 1.00 0.032
INCHES
A1 0.00 0.05 0.10 0.000
A2 0.70 REF
b0.30 0.35 0.40 0.012
c0.10 0.18 0.25 0.004
D1.80 2.10 2.20 0.071
E1.15 1.24 1.35 0.045
e1.20 1.30 1.40 0.047
0.035 0.040
0.002 0.004
0.014 0.016
0.007 0.010
0.083 0.087
0.049 0.053
0.051 0.055
NOM MAX
L
2.00 2.10 2.40 0.079 0.083 0.095
HE
e1 0.65 BSC
0.38
0.028 REF
0.026 BSC
0.015
0.20 0.56 0.008 0.022
STYLE 3:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
N. American Technical Support: 8002829855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81358171050
MMBT2222AWT1/D
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 3036752175 or 8003443860 Toll Free USA/Canada
Fax: 3036752176 or 8003443867 Toll Free USA/Canada
Email: orderlit@onsemi.com
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative