DS0128 Datasheet IGLOO2 FPGA and SmartFusion2 SoC FPGA Microsemi Headquarters One Enterprise, Aliso Viejo, CA 92656 USA Within the USA: +1 (800) 713-4113 Outside the USA: +1 (949) 380-6100 Sales: +1 (949) 380-6136 Fax: +1 (949) 215-4996 Email: sales.support@microsemi.com www.microsemi.com (c)2018 Microsemi, a wholly owned subsidiary of Microchip Technology Inc. All rights reserved. Microsemi and the Microsemi logo are registered trademarks of Microsemi Corporation. All other trademarks and service marks are the property of their respective owners. Microsemi makes no warranty, representation, or guarantee regarding the information contained herein or the suitability of its products and services for any particular purpose, nor does Microsemi assume any liability whatsoever arising out of the application or use of any product or circuit. The products sold hereunder and any other products sold by Microsemi have been subject to limited testing and should not be used in conjunction with mission-critical equipment or applications. Any performance specifications are believed to be reliable but are not verified, and Buyer must conduct and complete all performance and other testing of the products, alone and together with, or installed in, any end-products. Buyer shall not rely on any data and performance specifications or parameters provided by Microsemi. It is the Buyer's responsibility to independently determine suitability of any products and to test and verify the same. The information provided by Microsemi hereunder is provided "as is, where is" and with all faults, and the entire risk associated with such information is entirely with the Buyer. Microsemi does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other IP rights, whether with regard to such information itself or anything described by such information. Information provided in this document is proprietary to Microsemi, and Microsemi reserves the right to make any changes to the information in this document or to any products and services at any time without notice. About Microsemi Microsemi, a wholly owned subsidiary of Microchip Technology Inc. (Nasdaq: MCHP), offers a comprehensive portfolio of semiconductor and system solutions for aerospace & defense, communications, data center and industrial markets. Products include high-performance and radiation-hardened analog mixed-signal integrated circuits, FPGAs, SoCs and ASICs; power management products; timing and synchronization devices and precise time solutions, setting the world's standard for time; voice processing devices; RF solutions; discrete components; enterprise storage and communication solutions, security technologies and scalable anti-tamper products; Ethernet solutions; Power-over-Ethernet ICs and midspans; as well as custom design capabilities and services. Learn more at www.microsemi.com. 51700128. 12.0 8/18 Contents 1 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 1.10 1.11 1.12 Revision 12.0 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Revision 11.0 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Revision 10.0 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Revision 9.0 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Revision 8.0 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Revision 7.0 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Revision 6.0 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Revision 5.0 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Revision 4.0 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Revision 3.0 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Revision 2.0 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Revision 1.0 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1 1 1 2 2 2 2 3 3 3 4 2 IGLOO2 FPGA and SmartFusion2 SoC FPGA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2.1 2.2 2.3 Device Status . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 References . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Electrical Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 2.3.1 Operating Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 2.3.2 Power Consumption . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2.3.3 Average Fabric Temperature and Voltage Derating Factors . . . . . . . . . . . . . . . . . . . . . . . . . . 15 2.3.4 Timing Model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 2.3.5 User I/O Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 2.3.6 Logic Element Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75 2.3.7 Global Resource Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 78 2.3.8 FPGA Fabric SRAM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 79 2.3.9 Programming Times . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 94 2.3.10 Math Block Timing Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 103 2.3.11 Embedded NVM (eNVM) Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 104 2.3.12 SRAM PUF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 105 2.3.13 Non-Deterministic Random Bit Generator (NRBG) Characteristics . . . . . . . . . . . . . . . . . . . . 106 2.3.14 Cryptographic Block Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 106 2.3.15 Crystal Oscillator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 107 2.3.16 On-Chip Oscillator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 109 2.3.17 Clock Conditioning Circuits (CCC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 110 2.3.18 JTAG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 111 2.3.19 System Controller SPI Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 113 2.3.20 Power-up to Functional Times . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 114 2.3.21 DEVRST_N Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 116 2.3.22 DEVRST_N to Functional Times . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 116 2.3.23 Flash*Freeze Timing Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 119 2.3.24 DDR Memory Interface Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 119 2.3.25 SFP Transceiver Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120 2.3.26 SerDes Electrical and Timing AC and DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 120 2.3.27 SmartFusion2 Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 122 2.3.28 CAN Controller Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 127 2.3.29 USB Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 127 2.3.30 MMUART Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 128 2.3.31 IGLOO2 Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 128 Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 iii Figures Figure 1 Figure 2 Figure 3 Figure 4 Figure 5 Figure 6 Figure 7 Figure 8 Figure 9 Figure 10 Figure 11 Figure 12 Figure 13 Figure 14 Figure 15 Figure 16 Figure 17 Figure 18 Figure 19 Figure 20 Figure 21 Figure 22 Figure 23 High Temperature Data Retention (HTR) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Timing Model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Input Buffer AC Loading . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Output Buffer AC Loading . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Tristate Buffer for Enable Path Test Point . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Timing Model for Input Register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 I/O Register Input Timing Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 66 Timing Model for Output/Enable Register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 68 I/O Register Output Timing Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 69 Input DDR Module . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70 Input DDR Timing Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 71 Output DDR Module . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 73 Output DDR Timing Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 74 LUT-4 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75 Sequential Module . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 76 Sequential Module Timing Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 77 Power-up to Functional Timing Diagram for SmartFusion2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 115 Power-up to Functional Timing Diagram for IGLOO2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 116 DEVRST_N to Functional Timing Diagram for SmartFusion2 . . . . . . . . . . . . . . . . . . . . . . . . . . . 117 DEVRST_N to Functional Timing Diagram for IGLOO2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 118 I2C Timing Parameter Definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 124 SPI Timing for a Single Frame Transfer in Motorola Mode (SPH = 1) . . . . . . . . . . . . . . . . . . . . . 127 SPI Timing for a Single Frame Transfer in Motorola Mode (SPH = 1) . . . . . . . . . . . . . . . . . . . . . 130 Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 iv Tables Table 1 Table 2 Table 3 Table 4 Table 5 Table 6 Table 7 Table 8 Table 9 Table 10 Table 11 Table 12 Table 13 Table 14 Table 15 Table 16 Table 17 Table 18 Table 19 Table 20 Table 21 Table 22 Table 23 Table 24 Table 25 Table 26 Table 27 Table 28 Table 29 Table 30 Table 31 Table 32 Table 33 Table 34 Table 35 Table 36 Table 37 Table 38 Table 39 Table 40 Table 41 Table 42 Table 43 Table 44 Table 45 Table 46 Table 47 Table 48 Table 49 Table 50 IGLOO2 and SmartFusion2 Design Security Densities . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 IGLOO2 and SmartFusion2 Data Security Densities . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Recommended Operating Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 FPGA Operating Limits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Embedded Operating Flash Limits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Device Storage Temperature and Retention . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 High Temperature Data Retention (HTR) Lifetime . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Package Thermal Resistance of SmartFusion2 and IGLOO2 Devices . . . . . . . . . . . . . . . . . . . . . 11 Quiescent Supply Current Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 SmartFusion2 and IGLOO2 Quiescent Supply Current (VDD = 1.2 V) - Typical Process . . . . . . . 13 Currents During Program Cycle, 0 C < = TJ <= 85 C - Typical Process . . . . . . . . . . . . . . . . . . . 14 Currents During Verify Cycle, 0 C <= TJ <= 85 C - Typical Process . . . . . . . . . . . . . . . . . . . . . . 14 SmartFusion2 and IGLOO2 Quiescent Supply Current (VDD = 1.26 V) - Worst-Case Process . . 14 Average Junction Temperature and Voltage Derating Factors for Fabric Timing Delays . . . . . . . . 15 Inrush Currents at Power up, -40 C <= TJ <= 100 C - Typical Process . . . . . . . . . . . . . . . . . . . 15 Timing Model Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Maximum Data Rate Summary Table for Single-Ended I/O in Worst-Case Industrial Conditions . 20 Maximum Data Rate Summary Table for Voltage-Referenced I/O in Worst-Case Industrial Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Maximum Data Rate Summary Table for Differential I/O in Worst-Case Industrial Conditions . . . 21 Maximum Frequency Summary Table for Single-Ended I/O in Worst-Case Industrial Conditions . 21 Maximum Frequency Summary Table for Voltage-Referenced I/O in Worst-Case Industrial Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 Maximum Frequency Summary Table for Differential I/O in Worst-Case Industrial Conditions . . . 22 Input Capacitance, Leakage Current, and Ramp Time . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 I/O Weak Pull-up/Pull-down Resistances for DDRIO I/O Bank . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 I/O Weak Pull-Up/Pull-Down Resistances for MSIO I/O Bank . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 I/O Weak Pull-up/Pull-down Resistances for MSIOD I/O Bank . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 Schmitt Trigger Input Hysteresis . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 LVTTL/LVCMOS 3.3 V DC Recommended DC Operating Conditions (Applicable to MSIO I/O Bank Only) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 LVTTL/LVCMOS 3.3 V Input Voltage Specification (Applicable to MSIO I/O Bank Only) . . . . . . . 25 LVCMOS 3.3 V DC Output Voltage Specification (Applicable to MSIO I/O Bank Only) . . . . . . . . . 25 LVTTL 3.3 V DC Output Voltage Specification (Applicable to MSIO I/O Bank Only) . . . . . . . . . . . 25 LVTTL/LVCMOS 3.3 V AC Maximum Switching Speed (Applicable to MSIO I/O Bank Only) . . . . 25 LVTTL/LVCMOS 3.3 V AC Test Parameter Specifications (Applicable to MSIO I/O Bank Only) . . 26 LVTTL/LVCMOS 3.3 V Transmitter Drive Strength Specifications for MSIO I/O Bank . . . . . . . . . . 26 LVTTL/LVCMOS 3.3 V Receiver Characteristics for MSIO I/O Bank (Input Buffers) . . . . . . . . . . . 26 LVTTL/LVCMOS 3.3 V Transmitter Characteristics for MSIO I/O Bank (Output and Tristate Buffers) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 LVCMOS 2.5 V DC Recommended DC Operating Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 LVCMOS 2.5 V DC Input Voltage Specification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 LVCMOS 2.5 V DC Output Voltage Specification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 LVCMOS 2.5 V AC Minimum and Maximum Switching Speed . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 LVCMOS 2.5 V AC Calibrated Impedance Option . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 LVCMOS 2.5 V AC Test Parameter Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 LVCMOS 2.5 V Transmitter Drive Strength Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 LVCMOS 2.5 V Receiver Characteristics (Input Buffers) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 LVCMOS 2.5 V Transmitter Characteristics for DDRIO Bank (Output and Tristate Buffers) . . . . . 28 LVCMOS 2.5 V Transmitter Characteristics for MSIO Bank (Output and Tristate Buffers) . . . . . . 29 LVCMOS 2.5 V Transmitter Characteristics for MSIOD Bank (Output and Tristate Buffers) . . . . . 30 LVCMOS 1.8 V DC Recommended Operating Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 LVCMOS 1.8 V DC Input Voltage Specification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 v Table 51 Table 52 Table 53 Table 54 Table 55 Table 56 Table 57 Table 58 Table 59 Table 60 Table 61 Table 62 Table 63 Table 64 Table 65 Table 66 Table 67 Table 68 Table 69 Table 70 Table 71 Table 72 Table 73 Table 74 Table 75 Table 76 Table 77 Table 78 Table 79 Table 80 Table 81 Table 82 Table 83 Table 84 Table 85 Table 86 Table 87 Table 88 Table 89 Table 90 Table 91 Table 92 Table 93 Table 94 Table 95 Table 96 Table 97 Table 98 Table 99 Table 100 Table 101 Table 102 Table 103 Table 104 Table 105 Table 106 Table 107 LVCMOS 1.8 V DC Output Voltage Specification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 LVCMOS 1.8 V Minimum and Maximum AC Switching Speed . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 LVCMOS 1.8 V AC Calibrated Impedance Option . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31 LVCMOS 1.8 V AC Test Parameter Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31 LVCMOS 1.8 V Transmitter Drive Strength Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31 LVCMOS 1.8 V Receiver Characteristics (Input Buffers) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31 LVCMOS 1.8 V Transmitter Characteristics for DDRIO I/O Bank with Fixed Code (Output and Tristate Buffers) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32 LVCMOS 1.8 V Transmitter Characteristics for MSIO I/O Bank . . . . . . . . . . . . . . . . . . . . . . . . . . . 33 LVCMOS 1.8 V Transmitter Characteristics for MSIOD I/O Bank . . . . . . . . . . . . . . . . . . . . . . . . . 33 LVCMOS 1.5 V DC Recommended Operating Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33 LVCMOS 1.5 V DC Input Voltage Specification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33 LVCMOS 1.5 V DC Output Voltage Specification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34 LVCMOS 1.5 V AC Minimum and Maximum Switching Speed . . . . . . . . . . . . . . . . . . . . . . . . . . . 34 LVCMOS 1.5 V AC Calibrated Impedance Option . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34 LVCMOS 1.5 V AC Test Parameter Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34 LVCMOS 1.5 V Transmitter Drive Strength Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34 LVCMOS 1.5 V Receiver Characteristics for DDRIO I/O Bank with Fixed Codes (Input Buffers) . 35 LVCMOS 1.5 V Receiver Characteristics for MSIO I/O Bank (Input Buffers) . . . . . . . . . . . . . . . . . 35 LVCMOS 1.5 V Receiver Characteristics for MSIOD I/O Bank (Input Buffers) . . . . . . . . . . . . . . . . 35 LVCMOS 1.5 V Transmitter Characteristics for DDRIO I/O Bank (Output and Tristate Buffers) . . 35 LVCMOS 1.5 V Transmitter Characteristics for MSIO I/O Bank (Output and Tristate Buffers) . . . 36 LVCMOS 1.5 V Transmitter Characteristics for MSIOD I/O Bank (Output and Tristate Buffers) . . 37 LVCMOS 1.2 V DC Recommended DC Operating Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37 LVCMOS 1.2 V DC Input Voltage Specification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37 LVCMOS 1.2 V DC Output Voltage Specification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37 LVCMOS 1.2 V Minimum and Maximum AC Switching Speed . . . . . . . . . . . . . . . . . . . . . . . . . . . 37 LVCMOS 1.2 V AC Calibrated Impedance Option . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38 LVCMOS 1.2 V AC Test Parameter Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38 LVCMOS 1.2 V Transmitter Drive Strength Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38 LVCMOS 1.2 V Receiver Characteristics for DDRIO I/O Bank with Fixed Code (Input Buffers) . . 38 LVCMOS 1.2 V Receiver Characteristics for MSIO I/O Bank (Input Buffers) . . . . . . . . . . . . . . . . . 38 LVCMOS 1.2 V Receiver Characteristics for MSIOD I/O Bank (Input Buffers) . . . . . . . . . . . . . . . . 39 LVCMOS 1.2 V Transmitter Characteristics for DDRIO I/O Bank (Output and Tristate Buffers) . . 39 LVCMOS 1.2 V Transmitter Characteristics for MSIO I/O Bank (Output and Tristate Buffers) . . . 39 LVCMOS 1.2 V Transmitter Characteristics for MSIOD I/O Bank (Output and Tristate Buffers) . . 40 PCI/PCI-X DC Recommended Operating Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 PCI/PCI-X DC Input Voltage Specification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 PCI/PCI-X DC Output Voltage Specification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 PCI/PCI-X Minimum and Maximum AC Switching Speed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 PCI/PCI-X AC Test Parameter Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 PCI/PCIX AC Switching Characteristics for Receiver for MSIO I/O Bank (Input Buffers) . . . . . . . . 41 PCI/PCIX AC switching Characteristics for Transmitter for MSIO I/O Bank (Output and Tristate Buffers) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41 HSTL Recommended DC Operating Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41 HSTL DC Input Voltage Specification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41 HSTL DC Output Voltage Specification Applicable to DDRIO I/O Bank Only . . . . . . . . . . . . . . . . . 42 HSTL DC Differential Voltage Specification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42 HSTL AC Differential Voltage Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42 HSTL Minimum and Maximum AC Switching Speed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42 HSTL Impedance Specification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42 HSTL AC Test Parameter Specification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42 HSTL Receiver Characteristics for DDRIO I/O Bank with Fixed Code (Input Buffers) . . . . . . . . . . 43 HSTL Transmitter Characteristics for DDRIO I/O Bank (Output and Tristate Buffers) . . . . . . . . . . 43 DDR1/SSTL2 DC Recommended Operating Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 DDR1/SSTL2 DC Input Voltage Specification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 DDR1/SSTL2 DC Output Voltage Specification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 DDR1/SSTL2 DC Differential Voltage Specification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 SSTL2 AC Differential Voltage Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 vi Table 108 Table 109 Table 110 Table 111 Table 112 Table 113 Table 114 Table 115 Table 116 Table 117 Table 118 Table 119 Table 120 Table 121 Table 122 Table 123 Table 124 Table 125 Table 126 Table 127 Table 128 Table 129 Table 130 Table 131 Table 132 Table 133 Table 134 Table 135 Table 136 Table 137 Table 138 Table 139 Table 140 Table 141 Table 142 Table 143 Table 144 Table 145 Table 146 Table 147 Table 148 Table 149 Table 150 Table 151 Table 152 Table 153 Table 154 Table 155 Table 156 Table 157 Table 158 Table 159 Table 160 SSTL2 Minimum and Maximum AC Switching Speeds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45 SSTL2 AC Impedance Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45 DDR1/SSTL2 AC Test Parameter Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45 SSTL2 Receiver Characteristics for DDRIO I/O Bank (Input Buffers) . . . . . . . . . . . . . . . . . . . . . . 45 SSTL2 Receiver Characteristics for MSIO I/O Bank (Input Buffers) . . . . . . . . . . . . . . . . . . . . . . . . 45 DDR1/SSTL2 Receiver Characteristics for MSIOD I/O Bank (Input Buffers) . . . . . . . . . . . . . . . . . 46 SSTL2 Class I Transmitter Characteristics for DDRIO I/O Bank (Output and Tristate Buffers) . . . 46 DDR1/SSTL2 Class I Transmitter Characteristics for MSIO I/O Bank (Output and Tristate Buffers) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46 DDR1/SSTL2 Class I Transmitter Characteristics for MSIOD I/O Bank (Output and Tristate Buffers) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46 DDR1/SSTL2 Class II Transmitter Characteristics for DDRIO I/O Bank (Output and Tristate Buffers) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46 DDR1/SSTL2 Class II Transmitter Characteristics for MSIO I/O Bank (Output and Tristate Buffers) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46 SSTL18 DC Recommended DC Operating Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47 SSTL18 DC Input Voltage Specification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47 SSTL18 DC Output Voltage Specification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47 SSTL18 DC Differential Voltage Specification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47 SSTL18 AC Differential Voltage Specifications (Applicable to DDRIO Bank Only) . . . . . . . . . . . . 47 SSTL18 Minimum and Maximum AC Switching Speed (Applicable to DDRIO Bank Only) . . . . . . 48 SSTL18 AC Impedance Specifications (Applicable to DDRIO Bank Only) . . . . . . . . . . . . . . . . . . . 48 SSTL18 AC Test Parameter Specifications (Applicable to DDRIO Bank Only) . . . . . . . . . . . . . . . 48 DDR2/SSTL18 Receiver Characteristics for DDRIO I/O Bank with Fixed Code . . . . . . . . . . . . . . . 48 DDR2/SSTL18 Transmitter Characteristics (Output and Tristate Buffers) . . . . . . . . . . . . . . . . . . . 48 SSTL15 DC Recommended DC Operating Conditions (for DDRIO I/O Bank Only) . . . . . . . . . . . . 49 SSTL15 DC Input Voltage Specification (for DDRIO I/O Bank Only) . . . . . . . . . . . . . . . . . . . . . . . 49 SSTL15 DC Output Voltage Specification (for DDRIO I/O Bank Only) . . . . . . . . . . . . . . . . . . . . . . 49 SSTL15 DC Differential Voltage Specification (for DDRIO I/O Bank Only) . . . . . . . . . . . . . . . . . . 49 SSTL15 AC SSTL15 Minimum and Maximum AC Switching Speed (for DDRIO I/O Bank Only) . 50 SSTL15 Minimum and Maximum AC Switching Speed (for DDRIO I/O Bank Only) . . . . . . . . . . . 50 SSTL15 AC Calibrated Impedance Option (for DDRIO I/O Bank Only) . . . . . . . . . . . . . . . . . . . . . 50 SSTL15 AC Test Parameter Specifications (for DDRIO I/O Bank Only) . . . . . . . . . . . . . . . . . . . . 50 DDR3/SSTL15 Receiver Characteristics for DDRIO I/O Bank - with Calibration Only . . . . . . . . . 50 DDR3/SSTL15 Transmitter Characteristics (Output and Tristate Buffers) . . . . . . . . . . . . . . . . . . . 51 LPDDR DC Recommended DC Operating Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51 LPDDR DC Input Voltage Specification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51 LPDDR DC Output Voltage Specification Reduced Drive . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 52 LPDDR DC Output Voltage Specification Full Drive . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 52 LPDDR DC Differential Voltage Specification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 52 LPDDR AC Differential Voltage Specifications (for DDRIO I/O Bank Only) . . . . . . . . . . . . . . . . . . 52 LPDDR AC Specifications (for DDRIO I/O Bank Only) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 52 LPDDR AC Calibrated Impedance Option (for DDRIO I/O Bank Only) . . . . . . . . . . . . . . . . . . . . . 52 LPDDR AC Test Parameter Specifications (for DDRIO I/O Bank Only) . . . . . . . . . . . . . . . . . . . . . 52 LPDDR Receiver Characteristics for DDRIO I/O Bank with Fixed Codes . . . . . . . . . . . . . . . . . . . 53 LPDDR Reduced Drive for DDRIO I/O Bank (Output and Tristate Buffers) . . . . . . . . . . . . . . . . . . 53 LPDDR Full Drive for DDRIO I/O Bank (Output and Tristate Buffers) . . . . . . . . . . . . . . . . . . . . . . 53 LPDDR-LVCMOS 1.8 V Mode Recommended DC Operating Conditions . . . . . . . . . . . . . . . . . . . 53 LPDDR-LVCMOS 1.8 V Mode DC Input Voltage Specification . . . . . . . . . . . . . . . . . . . . . . . . . . . 53 LPDDR-LVCMOS 1.8 V Mode DC Output Voltage Specification . . . . . . . . . . . . . . . . . . . . . . . . . . 53 LPDDR-LVCMOS 1.8 V Minimum and Maximum AC Switching Speeds . . . . . . . . . . . . . . . . . . . . 54 LPDDR-LVCMOS 1.8 V Calibrated Impedance Option . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 54 LPDDR-LVCMOS 1.8 V AC Test Parameter Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 54 LPDDR-LVCMOS 1.8 V Mode Transmitter Drive Strength Specification for DDRIO Bank . . . . . . 54 LPDDR-LVCMOS 1.8V AC Switching Characteristics for Receiver (for DDRIO I/O Bank with Fixed Code - Input Buffers) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 54 LPDDR-LVCMOS 1.8 V AC Switching Characteristics for Transmitter for DDRIO I/O Bank (Output and Tristate Buffers) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 54 LVDS Recommended DC Operating Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 vii Table 161 Table 162 Table 163 Table 164 Table 165 Table 166 Table 167 Table 168 Table 169 Table 170 Table 171 Table 172 Table 173 Table 174 Table 175 Table 176 Table 177 Table 178 Table 179 Table 180 Table 181 Table 182 Table 183 Table 184 Table 185 Table 186 Table 187 Table 188 Table 189 Table 190 Table 191 Table 192 Table 193 Table 194 Table 195 Table 196 Table 197 Table 198 Table 199 Table 200 Table 201 Table 202 Table 203 Table 204 Table 205 Table 206 Table 207 Table 208 Table 209 Table 210 Table 211 Table 212 Table 213 LVDS DC Input Voltage Specification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 56 LVDS DC Output Voltage Specification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 56 LVDS DC Differential Voltage Specification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 56 LVDS Minimum and Maximum AC Switching Speed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 56 LVDS AC Impedance Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 56 LVDS AC Test Parameter Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 56 LVDS25 Receiver Characteristics for MSIO I/O Bank (Input Buffers) . . . . . . . . . . . . . . . . . . . . . . 57 LVDS25 Receiver Characteristics for MSIOD I/O Bank (Input Buffers) . . . . . . . . . . . . . . . . . . . . . 57 LVDS25 Transmitter Characteristics for MSIO I/O Bank (Output and Tristate Buffers) . . . . . . . . . 57 LVDS25 Transmitter Characteristics for MSIOD I/O Bank (Output and Tristate Buffers) . . . . . . . . 57 LVDS33 Receiver Characteristics for MSIO I/O Bank (Input Buffers) . . . . . . . . . . . . . . . . . . . . . . 57 LVDS33 Transmitter Characteristics for MSIO I/O Bank (Output and Tristate Buffers) . . . . . . . . . 57 B-LVDS Recommended DC Operating Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 58 B-LVDS DC Input Voltage Specification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 58 B-LVDS DC Output Voltage Specification (for MSIO I/O Bank Only) . . . . . . . . . . . . . . . . . . . . . . . 58 B-LVDS DC Differential Voltage Specification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 58 B-LVDS Minimum and Maximum AC Switching Speed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 58 B-LVDS AC Impedance Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 58 B-LVDS AC Test Parameter Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 58 B-LVDS AC Switching Characteristics for Receiver for MSIO I/O Bank (Input Buffers) . . . . . . . . . 59 B-LVDS AC Switching Characteristics for Receiver for MSIOD I/O Bank (Input Buffers) . . . . . . . . 59 B-LVDS AC Switching Characteristics for Transmitter (for MSIO I/O Bank - Output and Tristate Buffers) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 59 M-LVDS Recommended DC Operating Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 59 M-LVDS DC Input Voltage Specification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 59 M-LVDS DC Voltage Specification Output Voltage Specification (for MSIO I/O Bank Only) . . . . . 60 M-LVDS Differential Voltage Specification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 M-LVDS Minimum and Maximum AC Switching Speed for MSIO I/O Bank . . . . . . . . . . . . . . . . . . 60 M-LVDS AC Impedance Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 M-LVDS AC Test Parameter Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 M-LVDS AC Switching Characteristics for Receiver (for MSIO I/O Bank - Input Buffers) . . . . . . . 60 M-LVDS AC Switching Characteristics for Receiver (for MSIOD I/O Bank - Input Buffers) . . . . . . 60 M-LVDS AC Switching Characteristics for Transmitter (for MSIO I/O Bank - Output and Tristate Buffers) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 61 Mini-LVDS Recommended DC Operating Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 61 Mini-LVDS DC Input Voltage Specification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 61 Mini-LVDS DC Output Voltage Specification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 61 Mini-LVDS DC Differential Voltage Specification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 61 Mini-LVDS Minimum and Maximum AC Switching Speed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 61 Mini-LVDS AC Impedance Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 61 Mini-LVDS AC Test Parameter Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62 Mini-LVDS AC Switching Characteristics for Receiver (for MSIO I/O Bank - Input Buffers) . . . . . . 62 Mini-LVDS AC Switching Characteristics for Transmitter for MSIO I/O Bank (Output and Tristate Buffers) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62 Mini-LVDS AC Switching Characteristics for Transmitter (for MSIOD I/O Bank - Output and Tristate Buffers) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62 RSDS Recommended DC Operating Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 63 RSDS DC Input Voltage Specification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 63 RSDS DC Output Voltage Specification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 63 RSDS Differential Voltage Specification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 63 RSDS Minimum and Maximum AC Switching Speed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 63 RSDS AC Impedance Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 63 RSDS AC Test Parameter Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 63 RSDS AC Switching Characteristics for Receiver (for MSIO I/O Bank - Input Buffers) . . . . . . . . . 64 RSDS AC Switching Characteristics for Receiver (for MSIOD I/O Bank - Input Buffers) . . . . . . . . 64 RSDS AC Switching Characteristics for Transmitter (for MSIO I/O Bank - Output and Tristate Buffers) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 64 RSDS AC Switching Characteristics for Transmitter (for MSIOD I/O Bank - Output and Tristate Buffers) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 64 Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 viii Table 214 Table 215 Table 216 Table 217 Table 218 Table 219 Table 220 Table 221 Table 222 Table 223 Table 224 Table 225 Table 226 Table 227 Table 228 Table 229 Table 230 Table 231 Table 232 Table 233 Table 234 Table 235 Table 236 Table 237 Table 238 Table 239 Table 240 Table 241 Table 242 Table 243 Table 244 Table 245 Table 246 Table 247 Table 248 Table 249 Table 250 Table 251 Table 252 Table 253 Table 254 Table 255 Table 256 Table 257 Table 258 Table 259 Table 260 Table 261 Table 262 Table 263 Table 264 Table 265 Table 266 Table 267 Table 268 Table 269 Table 270 Table 271 Table 272 LVPECL Recommended DC Operating Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 64 LVPECL DC Input Voltage Specification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 64 LVPECL DC Differential Voltage Specification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 LVPECL Minimum and Maximum AC Switching Speeds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 LVPECL Receiver Characteristics for MSIO I/O Bank . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 Input Data Register Propagation Delays . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 67 Output/Enable Data Register Propagation Delays . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 69 Input DDR Propagation Delays . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 71 Output DDR Propagation Delays . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 74 Combinatorial Cell Propagation Delays . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 76 Register Delays . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 77 150 Device Global Resource . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 78 090 Device Global Resource . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 78 050 Device Global Resource . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 78 025 Device Global Resource . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 78 010 Device Global Resource . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 79 005 Device Global Resource . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 79 RAM1K18 - Dual-Port Mode for Depth x Width Configuration 1K x 18 . . . . . . . . . . . . . . . . . . . . . 79 RAM1K18 - Dual-Port Mode for Depth x Width Configuration 2K x 9 . . . . . . . . . . . . . . . . . . . . . . 80 RAM1K18 - Dual-Port Mode for Depth x Width Configuration 4K x 4 . . . . . . . . . . . . . . . . . . . . . . 81 RAM1K18 - Dual-Port Mode for Depth x Width Configuration 8K x 2 . . . . . . . . . . . . . . . . . . . . . . 83 RAM1K18 - Dual-Port Mode for Depth x Width Configuration 16K x 1 . . . . . . . . . . . . . . . . . . . . . 84 RAM1K18 - Two-Port Mode for Depth x Width Configuration 512 x 36 . . . . . . . . . . . . . . . . . . . . 85 SRAM (RAM64x18) in 64 x 18 Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 86 SRAM (RAM64x16) in 64 x 16 Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 87 SRAM (RAM128x9) in 128 x 9 Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 88 SRAM (RAM128x8) in 128 x 8 Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 89 SRAM (RAM256x4) in 256 x 4 Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 91 SRAM (RAM512x2) in 512 x 2 Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 92 SRAM (RAM1024x1) in 1024 x 1 Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 93 JTAG Programming (Fabric Only) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 94 JTAG Programming (eNVM Only) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 95 JTAG Programming (Fabric and eNVM) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 95 2 Step IAP Programming (Fabric Only) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 95 2 Step IAP Programming (eNVM Only) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 96 2 Step IAP Programming (Fabric and eNVM) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 96 SmartFusion2 Cortex-M3 ISP Programming (Fabric Only) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 96 SmartFusion2 Cortex-M3 ISP Programming (eNVM Only) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 96 SmartFusion2 Cortex-M3 ISP Programming (Fabric and eNVM) . . . . . . . . . . . . . . . . . . . . . . . . . . 97 Programming Times with 100 kHz, 25 MHz, and 12.5 MHz SPI Clock Rates (Fabric Only) . . . . . 97 Programming Times with 100 kHz, 25 MHz, and 12.5 MHz SPI Clock Rates (eNVM Only) . . . . . 97 Programming Times with 100 kHz, 25 MHz, and 12.5 MHz SPI Clock Rates (Fabric and eNVM) . 98 JTAG Programming (Fabric Only) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 99 JTAG Programming (eNVM Only) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 99 JTAG Programming (Fabric and eNVM) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 99 2 Step IAP Programming (Fabric Only) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 2 Step IAP Programming (eNVM Only) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 2 Step IAP Programming (Fabric and eNVM) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 SmartFusion2 Cortex-M3 ISP Programming (Fabric Only) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 101 SmartFusion2 Cortex-M3 ISP Programming (eNVM Only) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 101 SmartFusion2 Cortex-M3 ISP Programming (Fabric and eNVM) . . . . . . . . . . . . . . . . . . . . . . . . . 101 Programming Times with 100 kHz, 25 MHz. and 12.5 MHz SPI Clock Rates (Fabric Only) . . . . 102 Programming Times with 100 kHz, 25 MHz. and 12.5 MHz SPI Clock Rates (eNVM Only) . . . . 102 Programming Times with 100 kHz, 25 MHz. and 12.5 MHz SPI Clock Rates (Fabric and eNVM) 102 Math Blocks with all Registers Used . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 103 Math Block with Input Bypassed and Output Registers Used . . . . . . . . . . . . . . . . . . . . . . . . . . . 103 Math Block with Input Register Used and Output in Bypass Mode . . . . . . . . . . . . . . . . . . . . . . . . 104 Math Block with Input and Output in Bypass Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 104 eNVM Read Performance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 104 Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 ix Table 273 Table 274 Table 275 Table 276 Table 277 Table 278 Table 279 Table 280 Table 281 Table 282 Table 283 Table 284 Table 285 Table 286 Table 287 Table 288 Table 289 Table 290 Table 291 Table 292 Table 293 Table 294 Table 295 Table 296 Table 297 Table 298 Table 299 Table 300 Table 301 Table 302 Table 303 Table 304 Table 305 Table 306 Table 307 Table 308 Table 309 Table 310 eNVM Page Programming . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 104 SRAM PUF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 105 Non-Deterministic Random Bit Generator (NRBG) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 106 Cryptographic Block Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 106 Electrical Characteristics of the Crystal Oscillator - High Gain Mode (20 MHz) . . . . . . . . . . . . . . 107 Electrical Characteristics of the Crystal Oscillator - Medium Gain Mode (2 MHz) . . . . . . . . . . . . 108 Electrical Characteristics of the Crystal Oscillator - Low Gain Mode (32 kHz) . . . . . . . . . . . . . . . 108 Electrical Characteristics of the 50 MHz RC Oscillator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 109 Electrical Characteristics of the 1 MHz RC Oscillator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 109 IGLOO2 and SmartFusion2 SoC FPGAs CCC/PLL Specification . . . . . . . . . . . . . . . . . . . . . . . . 110 IGLOO2 and SmartFusion2 SoC FPGAs CCC/PLL Jitter Specifications . . . . . . . . . . . . . . . . . . . 111 JTAG 1532 for 005, 010, 025, and 050 Devices . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 111 JTAG 1532 for 060, 090, and 150 Devices . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 112 System Controller SPI Characteristics for All Devices . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 113 Supported I/O Configurations for System Controller SPI (for MSIO Bank Only) . . . . . . . . . . . . . 113 Power-up to Functional Times When MSS/HPMS is Used . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 114 Power-up to Functional Times When MSS/HPMS is not Used . . . . . . . . . . . . . . . . . . . . . . . . . . . 115 DEVRST_N Characteristics for All Devices . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 116 DEVRST_N to Functional Times When MSS/HPMS is Used . . . . . . . . . . . . . . . . . . . . . . . . . . . . 116 DEVRST_N to Functional Times When MSS/HPMS is not Used . . . . . . . . . . . . . . . . . . . . . . . . . 118 Flash*Freeze Entry and Exit Times . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 119 DDR Memory Interface Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 119 SFP Transceiver Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120 Transmitter Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120 Receiver Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 121 SerDes Protocol Compliance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 121 SerDes Reference Clock AC Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 122 HCSL Minimum and Maximum DC Input Levels (Applicable to SerDes REFCLK Only) . . . . . . . 122 HCSL Minimum and Maximum AC Switching Speeds (Applicable to SerDes REFCLK Only) . . . 122 Maximum Frequency for MSS Main Clock . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 122 I2C Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 123 I2C Switching Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 124 SPI Characteristics for All Devices . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125 CAN Controller Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 127 USB Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 127 MMUART Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 128 Maximum Frequency for HPMS Main Clock . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 128 SPI Characteristics for All Devices . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 128 Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 x Revision History 1 Revision History The revision history describes the changes that were implemented in the document. The changes are listed by revision, starting with the current publication. 1.1 Revision 12.0 The following is a summary of the changes in revision 11.0 of this document. * * * * 1.2 A note about SERDES_[01]_VDD supply was added to recommended operating conditions table. See Table 4, page 7. A note about VID was added to LVDS DC differential voltage specification. See Table 163, page 56. Updated Table 286, page 113. Table 288, page 114, Table 289, page 115, Table 290, page 116, Table 291, page 116, and Table 292, page 118. Updated Table 297, page 121 with RX-CID details. Revision 11.0 The following is a summary of the changes in revision 11.0 of this document. * * * * * * * * * 1.3 Updated Table 24, page 23 with minimum and maximum values for input current low and high (SAR 73114 and 80314). Added Non-Deterministic Random Bit Generator (NRBG) Characteristics, page 106 (SAR 73114 and 79517). Added 060 device in Table 282, page 110 (SAR 79860). Added DEVRST_N to Functional Times, page 116 (SAR 73114). Added Cryptographic Block Characteristics, page 106 (SAR 73114 and 79516). Update Table 296, page 120 with VTX-AMP details (SAR 81756). Update note in Table 297, page 121 (SAR 74570 and 80677). Update Table 298, page 121 with generic EPCS details (SAR 75307). Added Table 308, page 128 (SAR 50424). Revision 10.0 The following is a summary of the changes in revision 10.0 of this document. * * * * * * * * * * * * * 1.4 The Surge Current on VDD during DEVRST_B Assertion and Surge Current on VDD during Digest Check using System Services tables were deleted and added reference to AC393: Board Design Guidelines for SmartFusion2 SoC and IGLOO2 FPGAs Application Note. (SAR 76865 and 76623). Added 060 device in Table 4, page 7 (SAR 76383). Updated Table 24, page 23 for ramp time input (SAR 72103). Added 060 device details in Table 284, page 111 (SAR 74927). Updated Table 290, page 116 for name change (SAR 74925). Updated Table 283, page 111 for 060 FG676 Package details (SAR 78849). Updated Table 305, page 125 for SmartFusion2 and Table 310, page 128 for IGLOO2 for SPI timing and Fmax (SAR 56645, 75331). Updated Table 293, page 119 for Flash*Freeze entry and exit times (SAR 75329, 75330). Updated Table 297, page 121 for RX-CID information (SAR 78271). Added Table 8, page 9 and Figure 1, page 10 (SAR 78932). Updated Table 223, page 76 for timing characteristics and Table 224, page 77(SAR 75998). Added SRAM PUF, page 105 (SAR 64406). Added a footnote on digest cycle in Table 5, page 8 (SAR 79812). Revision 9.0 The following is a summary of the changes in revision 9.0 of this document. * * * Added a note in Table 5, page 8 (SAR 71506). Added a note in Table 6, page 9 (SAR 74616). Added a note in Figure 3, page 18 (SAR 71506). Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 1 Revision History * * * * * * * * * * * * * * * * * 1.5 Updated Quiescent Supply Current for 060 in Table 11, page 13 and Table 12, page 14 (SAR 74483). Updated programming currents for 060 in Table 13, page 14, Table 14, page 14, and Table 15, page 15. Added DEVRST_B assertion tables (SAR 74708). Updated I/O speeds for LVDS 3.3 V in Table 18, page 20 and Table 21, page 21 (SAR 69829). Updated Table 24, page 23 (SAR 69418). Updated Table 25, page 23, Table 26, page 24, Table 27, page 24 (SAR 74570). Updated all AC/DC table to link to the Input Capacitance, Leakage Current, and Ramp Time, page 23 for reference (SAR 69418). Added Table 244, page 94 and Table 256, page 99 (SAR 73971). Updated the SerDes Electrical and Timing AC and DC Characteristics, page 120 (SAR 71171). Added the DEVRST_N Characteristics, page 116 (SAR 64100, 72103). Added Table 298, page 121 (SAR 71897). Updated Table 25, page 23, Table 26, page 24, and Table 27, page 24 (SAR 74570). Added 060 devices in Table 277, page 107, Table 278, page 108, and Table 279, page 108 (SAR 57898). Updated duty cycle parameter of crystal in Table 280, page 109 and Table 281, page 109 (SAR 57898). Added 32 KHz mode PLL acquisition time in Table 282, page 110 (SAR 68281). Updated Table 293, page 119 for 060 devices (SAR 57828). Updated Table 297, page 121 for CID value (SAR 70878). Revision 8.0 The following is a summary of the changes in revision 8.0 of this document. * * * 1.6 Updated Table 11, page 13 (SAR 69218). Updated Table 12, page 14 (SAR 69218). Updated Table 283, page 111 (SAR 69000). Revision 7.0 The following is a summary of the changes in revision 7.0 of this document. * 1.7 Updated Table 1, page 5(SAR 68620). Revision 6.0 The following is a summary of the changes in revision 6.0 of this document. * * * * * * * * * 1.8 Updated Table 5, page 8 (SAR 65949). Updated Table 9, page 11 (SAR 62995). Updated Table 123, page 47 and Table 133, page 50 (SAR 67210). Added Embedded NVM (eNVM) Characteristics, page 104 (SAR 52509). Updated Table 277, page 107 (SAR 64855). Updated Table 282, page 110 (SAR 65958 and SAR 56666). Added DDR Memory Interface Characteristics, page 119 (SAR 66223). Added SFP Transceiver Characteristics, page 120 (SAR 63105). Updated Table 302, page 122 and Table 309, page 128 (SAR 66314). Revision 5.0 The following is a summary of the changes in revision 5.0 of this document. * * * * * * * Updated Table 1, page 5. Updated Table 4, page 7 for TJ symbol information. Updated Table 5, page 8 (SAR 63109). Updated Table 9, page 11. Updated Table 282, page 110 (SAR 62012). Added Table 290, page 116 (SAR 64100). Added Table 306, page 127, Table 307, page 127 (SAR 50424). Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 2 Revision History 1.9 Revision 4.0 The following is a summary of the changes in revision 4.0 of this document. * * * 1.10 Updated Table 1, page 5. Changed the Status of 090 devices to "Production" (SAR 62750). Updated Figure 10, page 70. Removed inverter bubble from DDR_IN latch (SAR 61418). Updated SerDes Electrical and Timing AC and DC Characteristics, page 120 (SAR 62836). Revision 3.0 In revision 3.0 of this document, the Theta B/C columns and FCS325 package was updated. For more information, see Table 9, page 11 (SAR 62002). 1.11 Revision 2.0 The following is a summary of the changes in revision 2.0 of this document. * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * Table 1, page 5 was updated (SAR 59056). Table 7, page 9 temperature and data retention information was updated SAR (61363). Storage Operating Table was updated and split into three tables - Table 5, page 8, Table 7, page 9 (SAR 58725). Updated Theta B/C columns and FCS325 package in Table 9, page 11 (SAR 62002). Added 090-FCS325 thermal resistance to Table 9, page 11 (SAR 59384). TQ144 package was added to Table 9, page 11 (SAR 57708). Added PLL jitter data for the VF400 package (SAR 53162). Added Additional Worst Case IDD to Table 11, page 13 and Table 12, page 14 (SAR 59077). Table 13, page 14, Table 14, page 14, and Table 15, page 15 were added to verify Inrush currents (SAR 56348). Table 18, page 20 and Table 21, page 21 - I/O speeds were replaced. Max speed was changed in Table 41, page 27 (SAR 57221) and in Table 52, page 30 (SAR 57113). Minimum and Maximum DC/AC Input and Output Levels Specification, page 30 and Table 49, page 30-Table 57, page 32 were added. Added Cload to Table 89, page 40 (SAR 56238). Removed "Rs" information in DDR Timing Measurement Table 123, page 47, Table 133, page 50, and Table 144, page 52. Updated drive programming for M/B-LVDS outputs (SAR 58154). Added an inverter bubble to DDR_IN latch in Figure 10, page 70 (SAR 61418). QF waveform in Figure 11, page 71 was updated (SAR 59816). uSRAM Write Clock minimum values were updated in Table 237, page 86-Table 243, page 93 (SAR 55236). Fixed typo in the 32 kHz Crystal (XTAL) oscillator accuracy data section (SAR 59669). The "On-Chip Oscillator" section was split, and the Embedded NVM (eNVM) Characteristics, page 104 was added. Table 277, page 107-Table 281, page 109 were revised.(SARs 57898 and 59669). PLL VCP Frequency and conditions were added to Table 282, page 110 (SAR 57416). Fixed typo for PLL jitter data in the 100-400 MHz range (SAR 60727). Updated FCCC information in Table 282, page 110 and Table 283, page 111 (SAR 60799). Device 025 specifications were added to Table 283, page 111 (SAR 51625). JTAG Table 284, page 111 was replaced (SAR 51188). Flash*Freeze Table 293, page 119 was replaced (SAR 57828). Added support for HCSL I/O Standard for SERDES reference clocks in Table 300, page 122 and Table 301, page 122 (SAR 50748). Tir and Tif parameters were added to Table 303, page 123 (SAR 52203). Speed grade consistency was fixed in tables throughout the datasheet (SAR 50722). Added jitter attenuation information (SAR 59405). Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 3 Revision History 1.12 Revision 1.0 The following is a summary of the changes in revision 1.0 of this document. * The IGLOO2 v2 and the SmartFusion2 v5 datasheets are combined into this single product family datasheet. Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 4 IGLOO2 FPGA and SmartFusion2 SoC FPGA 2 IGLOO2 FPGA and SmartFusion2 SoC FPGA Microsemi's mainstream SmartFusion(R)2 SoC and IGLOO(R)2 FPGA families integrate an industry standard 4-input lookup table-based (LUT) FPGA fabric with integrated math blocks, multiple embedded memory blocks, and high-performance SerDes communication interfaces on a single chip. Both families benefit from low-power flash technology and are the most secure and reliable FPGAs in the industry. These next generation devices offer up to 150K Logic Elements, up to 5 MBs of embedded RAM, up to 16 SerDes lanes, and up to four PCI Express Gen 2 endpoints, as well as integrated hard DDR3 memory controllers with error correction. SmartFusion2 devices integrate an entire low-power, real-time microcontroller subsystem (MSS) with a rich set of industry-standard peripherals including Ethernet, USB, and CAN, while IGLOO2 devices integrate a high-performance memory subsystem with on-chip flash, 32 Kbyte embedded SRAM, and multiple DMA controllers. 2.1 Device Status The following table shows the design security densities and development status of the IGLOO2 FPGA and SmartFusion2 SoC FPGA devices. Table 1 * IGLOO2 and SmartFusion2 Design Security Densities Design Security Device Densities Status 005 Production 010, 010T Production 025, 025T Production 050, 050T Production 060, 060T Production 090, 090T Production 150, 150T Production The following table shows the data security densities and development status of the IGLOO2 FPGA and SmartFusion2 SoC FPGA devices. Table 2 * IGLOO2 and SmartFusion2 Data Security Densities Data Security Device Densities Status 005S Production 010TS Production 025TS Production 050TS Production 060TS Production 090TS Production 150TS Production Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 5 IGLOO2 FPGA and SmartFusion2 SoC FPGA 2.2 References The following documents are recommended references: * * * * PB0121: IGLOO2 Product Brief DS0124: IGLOO2 Pin Descriptions PB0115: SmartFusion2 SoC FPGA Product Brief DS0115: SmartFusion2 Pin Descriptions All product documentation for IGLOO2 and SmartFusion2 is available at: http://www.microsemi.com/products/fpga-soc/fpga/igloo2-fpga http://www.microsemi.com/products/fpga-soc/soc-fpga/smartfusion2#overview 2.3 Electrical Specifications 2.3.1 Operating Conditions The following table lists the stress limits. Stress applied above the specified limit may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Absolute maximum ratings are stress ratings only; functional operation of the device at these or any other conditions beyond those listed under the recommended operating conditions specified in the following table are not implied. Table 3 * Absolute Maximum Ratings Parameter Symbol Min Max Unit DC core supply voltage. Must always power this pin. VDD -0.3 1.32 V Power supply for charge pumps (for normal operation and programming). Must always power this pin. VPP -0.3 3.63 V Analog power pad for MDDR PLL MSS_MDDR_PLL_VDDA -0.3 3.63 V Analog power pad for MDDR PLL HPMS_MDDR_PLL_VDDA -0.3 3.63 V Analog power pad for FDDR PLL FDDR_PLL_VDDA -0.3 3.63 V Analog power pad for MDDR PLL PLL0_PLL1_MSS_MDDR_VDDA -0.3 3.63 V Analog power pad for MDDR PLL PLL0_PLL1_HPMS_MDDR_VDDA -0.3 3.63 V Analog power pad for PLL0-5 CCC_XX[01]_PLL_VDDA -0.3 3.63 V High supply voltage for PLL SerDes[01] SERDES_[01]_PLL_VDDA -0.3 3.63 V Analog power for SerDes[01] PLL lane0 to lane3. This is a 2.5 V SerDes internal PLL supply. SERDES_[01]_L[0123]_VDDAPLL -0.3 2.75 V TX/RX analog I/O voltage. Low voltage power for the lanes of SerDesIF0. This is a 1.2 V SerDes PMA supply. SERDES_[01]_L[0123]_VDDAIO -0.3 1.32 V PCIe/PCS power supply SERDES_[01]_VDD -0.3 1.32 V DC FPGA I/O buffer supply voltage for MSIO I/O bank VDDIx -0.3 3.63 V DC FPGA I/O buffer supply voltage for MSIOD/DDRIO I/O banks VDDIx -0.3 2.75 V I/O Input voltage for MSIO I/O bank VI -0.3 3.63 V I/O Input voltage for MSIOD/DDRIO I/O bank VI -0.3 2.75 V Analog sense circuit supply of embedded nonvolatile memory (eNVM). Must be shorted to VPP. VPPNVM -0.3 3.63 V Storage temperature1 TSTG -65 150 C Junction temperature TJ -55 135 C Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 6 IGLOO2 FPGA and SmartFusion2 SoC FPGA 1. For flash programming and retention maximum limits, see Table 5, page 8. For recommended operating conditions, see Table 4, page 7. Table 4 * Recommended Operating Conditions1 Parameter Symbol Min Typ Max Unit Conditions Operating junction temperature TJ 0 25 85 C Commercial -40 25 100 C Industrial 0 25 85 C Commercial -40 25 100 C Industrial Programming junction temperatures2 TJ DC core supply voltage. Must always power this pin. VDD 1.14 1.2 1.26 V Power supply for charge pumps (for normal operation and programming) for the 005, 010, 025, 050, 060 devices VPP 2.375 2.5 2.625 V 2.5 V range 3.15 3.3 3.45 V 3.3 V range Power supply for charge pumps (for normal operation and programming) for the 090 and 150 devices VPP 3.15 3.3 3.45 V 3.3 V range Analog power pad for MDDR PLL MSS_MDDR_PLL_VDDA 2.375 2.5 2.625 V 2.5 V range 3.15 3.3 3.45 V 3.3 V range 2.375 2.5 2.625 V 2.5 V range 3.15 3.3 3.45 V 3.3 V range 2.375 2.5 2.625 V 2.5 V range 3.15 3.3 3.45 V 3.3 V range 2.5 2.625 V 2.5 V range 3.3 3.45 V 3.3 V range Analog power pad for MDDR PLL Analog power pad for FDDR PLL Analog power pad for MDDR PLL Analog power pad for MDDR PLL Analog power pad for PLL0 to PLL5 HPMS_MDDR_PLL_VDDA FDDR_PLL_VDDA PLL0_PLL1_MSS_MDDR_V 2.375 DDA 3.15 PLL0_PLL1_HPMS_MDDR_ 2.375 VDDA 3.15 2.5 2.625 V 2.5 V range 3.3 3.45 V 3.3 V range CCC_XX[01]_PLL_VDDA 2.375 2.5 2.625 V 2.5 V range 3.15 3.3 3.45 V 3.3 V range 2.375 2.5 2.625 V 2.5 V range 3.15 3.3 3.45 V 3.3 V range High supply voltage for PLL SerDes[01] SERDES_[01]_PLL_VDDA Analog power for SerDes[01] PLL Lane 0 to Lane 3. This is a 2.5 V SerDes internal PLL supply. SERDES_[01]_L[0123]_VD DAPLL 2.375 2.5 2.625 V TX/RX analog I/O voltage. Low voltage power for the lanes of SerDesIF0. This is a 1.2 V SerDes PMA supply. SERDES_[01]_L[0123]_VD DAIO 1.14 1.2 1.26 V PCIe/PCS power supply SERDES_[01]_VDD 1.14 1.2 1.26 V 1.2 V DC supply voltage VDDIx 1.14 1.2 1.26 V 1.5 V DC supply voltage VDDIx 1.425 1.5 1.575 V 1.8 V DC supply voltage VDDIx 1.71 1.8 1.89 V 2.5 V DC supply voltage VDDIx 2.375 2.5 2.625 V Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 7 IGLOO2 FPGA and SmartFusion2 SoC FPGA Table 4 * Recommended Operating Conditions1 (continued) Parameter Symbol Min Typ Max Unit 3.3 V DC supply voltage VDDIx 3.15 3.3 3.45 V LVDS differential I/O VDDIx 2.375 2.5 3.45 V B-LVDS, M-LVDS, Mini-LVDS, RSDS differential I/O VDDIx 2.375 2.5 2.625 V LVPECL differential I/O VDDIx 3.15 3.3 3.45 V Reference voltage supply for FDDR (Bank0) and MDDR (Bank5) VREFx 0.49 x 0.5 x VDDIx VDDIx 0.51 x V VDDIx Analog sense circuit supply of embedded nonvolatile memory (eNVM). Must be shorted to VPP. VPPNVM 2.375 2.5 2.625 V 2.5 V range 3.15 3.3 3.45 V 3.3 V range 1. 2. Conditions The SERDES_[01]_VDD supply must be connected to VDD. Programming at Industrial temperature range is available only with VPP = 3.3 V. Note: Power supply ramps must all be strictly monotonic, without plateaus. Table 5 * Product Grade FPGA Operating Limits Programming Element Temperature Operating Temperature Programming Digest Cycles Temperature Min TJ = 0 C Max TJ = 85 C Digest Cycles Retention (Biased/ Unbiased) Commercial FPGA Min TJ = 0 C Max TJ = 85 C 500 Min TJ = 0 C 2000 Max TJ = 85 C 20 years Industrial1 Min TJ = -40 C Min TJ = -40 C 500 Max TJ = 100 C Max TJ = 100 C Min TJ = -40 C 2000 Max TJ = 100 C 20 years 1. FPGA Programming at Industrial temperature range is available only with VPP = 3.3 V. Note: The retention specification is defined as the total number of programing and digest cycles. For example, 20 years of retention after 500 programming cycles. Note: The digest cycle specification is 2000 digest cycles for every program cycle with a maximum of 500 programming cycles. Note: If your product qualification requires accelerated programming cycles, see Microsemi SoC Products Quality and Reliability Report about recommended methodologies. Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 8 IGLOO2 FPGA and SmartFusion2 SoC FPGA The following table lists the embedded operating flash limits. Table 6 * Product Grade Embedded Operating Flash Limits Programming Temperature Element Commercial Embedded flash Min TJ = 0 C Max TJ = 85 C Industrial Embedded flash Min TJ = -40 C Max TJ = 100 C Maximum Operating Temperature Programming Cycles Retention (Biased/Unbiased) Min TJ = 0 C Max TJ = 85 C < 1000 cycles per page, up to two million cycles per eNVM array 20 years Min TJ = 0 C Max TJ = 85 C < 10000 cycles per page, 10 years up to 20 million cycles per eNVM array Min TJ = -40 C < 1000 cycles per page, Max TJ = 100 C up to two million cycles per eNVM array 20 years Min TJ = -40 C < 10000 cycles per page, 10 years Max TJ = 100 C up to 20 million cycles per eNVM array Note: If your product qualification requires accelerated programming cycles, see Microsemi SoC Products Quality and Reliability Report about recommended methodologies. Table 7 * Device Storage Temperature and Retention Product Grade Storage Temperature (Tstg) Retention Commercial Min TJ = 0 C Max TJ = 85 C 20 years Industrial Min TJ = -40 C Max TJ = 100 C 20 years Table 8 * High Temperature Data Retention (HTR) Lifetime TJ (C) HTR Lifetime1 (yrs) 90 20.5 95 20.5 100 20.5 105 17.0 110 15.0 115 13.0 120 11.5 125 10.0 130 8.0 135 6.0 140 4.5 145 3.0 150 1.5 1. HTR Lifetime is the period during which a verify failure is not expected due to flash leakage. Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 9 IGLOO2 FPGA and SmartFusion2 SoC FPGA Figure 1 * High Temperature Data Retention (HTR) 2.3.1.1 Overshoot/Undershoot Limits For AC signals, the input signal may undershoot during transitions to -1.0 V for no longer than 10% of the period. The current during the transition must not exceed 100 mA. For AC signals, the input signal may overshoot during transitions to VCCI + 1.0 V for no longer than 10% of the period. The current during the transition must not exceed 100 mA. Note: The above specifications do not apply to the PCI standard. The IGLOO2 and SmartFusion2 PCI I/Os are compliant with the PCI standard including the PCI overshoot/undershoot specifications. 2.3.1.2 Thermal Characteristics The temperature variable in the Microsemi SoC Products Group Designer software refers to the junction temperature, not the ambient, case, or board temperatures. This is an important distinction because dynamic and static power consumption causes the chip's junction temperature to be higher than the ambient, case, or board temperatures. EQ1 through EQ3 give the relationship between thermal resistance, temperature gradient, and power. TJ - TA JA = -----------------P EQ 1 TJ - TB JB = -----------------P EQ 2 TJ - TC JC = -----------------P EQ 3 Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 10 IGLOO2 FPGA and SmartFusion2 SoC FPGA where JA = Junction-to-air thermal resistance JB = Junction-to-board thermal resistance JC = Junction-to-case thermal resistance TJ = Junction temperature TA = Ambient temperature TB = Board temperature (measured 1.0 mm away from the package edge) TC = Case temperature P = Total power dissipated by the device Table 9 * Package Thermal Resistance of SmartFusion2 and IGLOO2 Devices Still Air 1.0 m/s 2.5 m/s JA Device JB JC Unit 005 FG484 19.36 15.81 14.63 9.74 5.27 C/W VF256 41.30 38.16 35.30 28.41 3.94 C/W VF400 20.19 16.94 15.41 8.86 4.95 C/W TQ144 42.80 36.80 34.50 37.20 10.80 C/W FG484 18.22 14.83 13.62 8.83 4.92 C/W VF256 37.36 34.26 31.45 24.84 7.89 C/W VF400 19.40 15.75 14.22 8.11 4.22 C/W TQ144 38.60 32.60 30.30 31.80 8.60 C/W FG484 17.03 13.66 12.45 7.66 4.18 C/W VF256 33.85 30.59 27.85 21.63 6.13 C/W VF400 18.36 14.89 13.36 7.12 3.41 C/W FCS325 29.17 24.87 23.12 14.44 2.31 C/W FG484 15.29 12.19 10.99 6.27 3.24 C/W FG896 14.70 12.50 10.90 7.20 4.90 C/W VF400 17.53 14.17 12.63 6.32 2.81 C/W FCS325 27.38 23.18 21.41 12.47 1.59 C/W FG484 15.40 12.06 10.85 6.14 3.15 C/W FG676 15.49 12.21 11.06 7.07 3.87 C/W 010 025 050 060 VF400 17.45 14.01 12.47 6.22 2.69 C/W FCS325 27.03 22.91 21.25 12.33 1.54 C/W FG484 14.64 11.37 10.16 5.43 2.77 C/W FG676 14.52 11.19 10.37 6.17 3.24 C/W FCS325 26.63 22.26 20.13 14.24 2.50 C/W 090 Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 11 IGLOO2 FPGA and SmartFusion2 SoC FPGA Table 9 * Package Thermal Resistance of SmartFusion2 and IGLOO2 Devices (continued) Still Air 1.0 m/s 2.5 m/s JA Device JB JC Unit 150 2.3.1.2.1 FC1152 9.08 6.81 5.87 2.56 0.38 C/W FCS536 15.01 12.06 10.76 3.69 1.55 C/W FCV484 16.21 13.11 11.84 6.73 0.10 C/W Theta-JA Junction-to-ambient thermal resistance (JA) is determined under standard conditions specified by JEDEC (JESD-51), but it has little relevance in the actual performance of the product. It must be used with caution, but it is useful for comparing the thermal performance of one package with another. The maximum power dissipation allowed is calculated using EQ4. T J(MAX) - T A(MAX) Maximum power allowed = ------------------------------------------- JA EQ 4 The absolute maximum junction temperature is 100 C. EQ5 shows a sample calculation of the absolute maximum power dissipation allowed for the M2GL050T-FG896 package at commercial temperature and in still air, where: JA = 14.7 C/W (taken from Table 9, page 11). TA = 85 C C - 85 C Maximum power allowed = 100 ---------------------------------------- = 1.088 W 14.7 C/W EQ 5 The power consumption of a device can be calculated using the Microsemi SoC Products Group power calculator. The device's power consumption must be lower than the calculated maximum power dissipation by the package. If the power consumption is higher than the device's maximum allowable power dissipation, a heat sink may be attached to the top of the case, or the airflow inside the system must be increased. 2.3.1.2.2 Theta-JB Junction-to-board thermal resistance (JB) measures the ability of the package to dissipate heat from the surface of the chip to the PCB. As defined by the JEDEC (JESD-51) standard, the thermal resistance from the junction to the board uses an isothermal ring cold plate zone concept. The ring cold plate is simply a means to generate an isothermal boundary condition at the perimeter. The cold plate is mounted on a JEDEC standard board with a minimum distance of 5.0 mm away from the package edge. 2.3.1.2.3 Theta-JC Junction-to-case thermal resistance (JC) measures the ability of a device to dissipate heat from the surface of the chip to the top or bottom surface of the package. It is applicable to packages used with external heat sinks. Constant temperature is applied to the surface, which acts as a boundary condition. This only applies to situations where all or nearly all of the heat is dissipated through the surface in consideration. 2.3.1.3 ESD Performance See RT0001: Microsemi Corporation - SoC Products Reliability Report for information about ESD. Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 12 IGLOO2 FPGA and SmartFusion2 SoC FPGA 2.3.2 Power Consumption The following sections describe the power consumptions of the devices. 2.3.2.1 Quiescent Supply Current Table 10 * Quiescent Supply Current Characteristics Modes and Configurations Power Supplies/Blocks Non-Flash*Freeze Flash*Freeze On Off On On On On HPMS_MDDR_PLL_VDDA/FDDR_PLL_VDDA/ 0V CCC_XX[01]_PLL_VDDA/PLL0_PLL1_HPMS_MDDR_VDD A 0V SERDES_[01]_PLL_VDDA2 0V 0V SERDES_[01]_L[0123]_VDDAPLL/VDD_2V52 On On SERDES_[01]_L[0123]_VDDAIIO2 On On VDDIx3, 4 On On VREFx On On MSSDDR CLK 32 kHz 32 kHz RAM On Sleep state System controller 50 MHz 50 MHz 50 MHz oscillator (enable/disable) Enable Disabled 1 MHz oscillator (enable/disable) Disabled Disabled Crystal oscillator (enable/disable) Disabled Disabled FPGA Core VDD/SERDES_[01]_VDD 1 VPP/VPPNVM 1. 2. 3. 4. SERDES_[01]_VDD Power Supply is shorted to VDD. SerDes and DDR blocks to be unused. VDDIx has been set to ON for test conditions as described. Banks on the east side should always be powered with the appropriate VDDI bank supplies. For details on bank power supplies, see "Recommendation for Unused Bank Supplies" table in the AC393: SmartFusion2 and IGLOO2 Board Design Guidelines Application Note. No Differential (that is to say, LVDS) I/Os or ODT attributes to be used. Table 11 * SmartFusion2 and IGLOO2 Quiescent Supply Current (VDD = 1.2 V) - Typical Process Symbol Modes 005 010 025 050 060 090 150 Unit Conditions IDC1 NonFlash*Freeze 6.2 6.9 8.9 13.1 15.3 15.4 27.5 mA Typical (TJ = 25 C) 24.0 28.4 40.6 67.8 80.6 81.4 144.7 mA Commercial (TJ = 85 C) 35.2 41.9 60.5 102.1 121.4 122.6 219.1 mA Industrial (TJ = 100 C) Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 13 IGLOO2 FPGA and SmartFusion2 SoC FPGA Table 11 * SmartFusion2 and IGLOO2 Quiescent Supply Current (VDD = 1.2 V) - Typical Process Symbol Modes 005 010 025 050 060 090 150 Unit Conditions IDC2 Flash*Freeze 1.4 2.6 3.7 5.1 5.0 5.1 8.9 mA Typical (TJ = 25 C) 12.0 20.0 26.6 35.3 35.4 35.7 57.8 mA Commercial (TJ = 85 C) 18.5 30.8 41.0 54.5 54.5 55.0 89.0 mA Industrial (TJ = 100 C) Table 12 * SmartFusion2 and IGLOO2 Quiescent Supply Current (VDD = 1.26 V) - Worst-Case Process Symbol Modes 005 010 025 050 060 090 150 Unit Conditions IDC1 Non43.8 Flash*Freeze 57.0 84.6 132.3 161.4 163.0 242.5 mA Commercial (TJ= 85 C) 65.3 85.7 127.8 200.9 245.4 247.8 369.0 mA Industrial (TJ = 100 C) Flash*Freeze 29.1 45.6 51.7 62.7 69.3 70.0 84.8 mA Commercial (TJ = 85 C) 44.9 70.3 79.7 96.5 106.8 107.8 130.6 mA Industrial (TJ = 100 C) IDC2 2.3.2.2 Programming Currents The following tables represent programming, verify and Inrush currents for SmartFusion2 SoC and IGLOO2 FPGA devices. Table 13 * Currents During Program Cycle, 0 C < = TJ <= 85 C - Typical Process Power Supplies Voltage (V) 005 010 025 050 060 090 1501 Unit VDD 1.26 46 53 55 58 30 42 52 mA VPP 3.46 8 11 6 10 9 12 12 mA VPPNVM 3.46 1 2 2 3 3 3 VDDI 2.62 31 16 17 1 12 12 81 mA 3.46 62 31 36 1 12 17 84 mA 7 8 8 10 10 9 19 Number of banks 1. mA VPP and VPPNVM are internally shorted. Table 14 * Currents During Verify Cycle, 0 C <= TJ <= 85 C - Typical Process Power Supplies Voltage (V) 005 010 025 050 060 090 1501 Unit VDD 1.26 44 53 55 58 33 41 51 mA VPP 3.46 6 5 3 15 8 11 12 mA VPPNVM 3.46 1 0 0 1 1 1 VDDI 2.62 31 16 17 1 12 11 81 mA 3.46 61 32 36 1 12 17 84 mA 7 8 8 10 10 9 19 Number of banks 1. mA VPP and VPPNVM are internally shorted. Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 14 IGLOO2 FPGA and SmartFusion2 SoC FPGA Table 15 * Inrush Currents at Power up, -40 C <= TJ <= 100 C - Typical Process Power Supplies Voltage (V) 005 010 025 050 060 090 150 Unit VDD 1.26 25 32 38 48 45 77 109 mA VPP 3.46 33 49 36 180 13 36 51 mA VDDI 2.62 134 141 161 187 93 272 388 mA 7 8 8 10 10 9 19 Number of banks 2.3.3 Average Fabric Temperature and Voltage Derating Factors The following table lists the average temperature and voltage derating factors for fabric timing delays normalized to TJ = 85 C, in worst-case VDD = 1.14 V. Table 16 * Average Junction Temperature and Voltage Derating Factors for Fabric Timing Delays Array Voltage VDD (V) -40 C 0 C 25 C 70 C 85 C 100 C 1.14 0.83 0.89 0.92 0.98 1.00 1.02 1.2 0.75 0.80 0.83 0.89 0.91 0.93 1.26 0.69 0.73 0.76 0.81 0.83 0.85 Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 15 IGLOO2 FPGA and SmartFusion2 SoC FPGA 2.3.4 Timing Model This section describes timing model and timing parameters. Figure 2 * Timing Model The following table lists the timing model parameters in worst commercial-case conditions when TJ = 85 C, VDD = 1.14 V. Table 17 * Timing Model Parameters Index Symbol Description -1 Unit For More Information A TPY Propagation delay of DDR3 receiver 1.605 ns See Table 137, page 50 B TICLKQ Clock-to-Q of the input data register 0.16 ns See Table 221, page 71 TISUD Setup time of the input data register 0.357 ns See Table 221, page 71 TRCKH Input high delay for global clock 1.53 ns See Table 227, page 78 TRCKL Input low delay for global clock 0.897 ns See Table 227, page 78 D TPY Input propagation delay of LVDS receiver 2.774 ns See Table 167, page 57 E TDP Propagation delay of a three-input AND 0.198 gate ns See Table 223, page 76 C Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 16 IGLOO2 FPGA and SmartFusion2 SoC FPGA Table 17 * Timing Model Parameters (continued) Index Symbol Description -1 Unit For More Information F TDP Propagation delay of an OR gate 0.179 ns See Table 223, page 76 G TDP Propagation delay of an LVDS transmitter 2.136 ns See Table 169, page 57 H TDP Propagation delay of a three-input XOR 0.241 Gate ns See Table 223, page 76 I TDP Propagation delay of LVCMOS 2.5 V transmitter, drive strength of 16 mA on the MSIO bank 2.412 ns See Table 46, page 28 J TDP Propagation delay of a two-input NAND 0.179 gate ns See Table 223, page 76 K TDP Propagation delay of LVCMOS 2.5 V transmitter, drive strength of 8 mA on the MSIO bank 2.309 ns See Table 46, page 28 L TCLKQ Clock-to-Q of the data register 0.108 ns See Table 224, page 77 TSUD Setup time of the data register 0.254 ns See Table 224, page 77 M TDP Propagation delay of a two-input AND gate 0.179 ns See Table 223, page 76 N TOCLKQ Clock-to-Q of the output data register 0.263 ns See Table 220, page 69 TOSUD Setup time of the output data register 0.19 ns See Table 220, page 69 O TDP Propagation delay of SSTL2, Class I transmitter on the MSIO bank 2.055 ns See Table 114, page 46 P TDP Propagation delay of LVCMOS 1.5 V transmitter, drive strength of 12 mA, fast slew on the DDRIO bank 3.316 ns See Table 70, page 35 Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 17 IGLOO2 FPGA and SmartFusion2 SoC FPGA 2.3.5 User I/O Characteristics There are three types of I/Os supported in the IGLOO2 FPGA and SmartFusion2 SoC FPGA families: MSIO, MSIOD, and DDRIO I/O banks. The I/O standards supported by the different I/O banks is described in the I/Os section of the UG0445: IGLOO2 FPGA and SmartFusion2 SoC FPGA Fabric User Guide. 2.3.5.1 Input Buffer and AC Loading The following figure shows the input buffer and AC loading. Figure 3 * Input Buffer AC Loading TPY TPYS PAD Note: TPYS = Schmitt Trigger Input Y IN TPY = MAX(TPY(R), TPY(F)) TPYS = MAX(TPYS(R), TPYS(F)) VIH VTRIP IN VTRIP VIL VCCA 50% 50% Y GND TPY TPY (R) (F) TPYS (R) TPYS (F) Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 18 IGLOO2 FPGA and SmartFusion2 SoC FPGA 2.3.5.2 Output Buffer and AC Loading The following figure shows the output buffer and AC loading. Figure 4 * Output Buffer AC Loading Single-Ended I/O Test Setup HSTL/PCI Test Setup TDP TDP OUT D PAD VTT/VDDI PAD OUT D Rtt_test CLOAD CLOAD TDP = MAX(TDP(R), TDP(F)) TDP = MAX(TDP(R), TDP(F)) Voltage-Referenced, Singled-Ended I/O Test Setup TDP D OUT VTT PAD Rtt_test CLOAD TDP = MAX(TDP(R), TDP(F)) Differential I/O Test Setup TDP OUT TPY PAD_P PAD_P D IN PAD_N TDP = MAX(TDP(R), TDP(F)) PAD_N TPY = MAX(TPY(R), TPY(F)) TPYS = MAX(TPYS(R), TPYS(F)) Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 19 IGLOO2 FPGA and SmartFusion2 SoC FPGA 2.3.5.3 Tristate Buffer and AC Loading The tristate path for enable path loadings is described in the respective specifications. The following figure shows the methodology of characterization illustrated by the enable path test point. Figure 5 * Tristate Buffer for Enable Path Test Point TZL, TZH, THZ, TLZ E OUT D Rent to VDDI for TZL, TLZ PAD Cent TZL, TLZ, TZH, THZ Rent to GND for TZH, THZ Data (D) 50% 50% TZL Enable (E) 50% THZ PAD TZH 90% VDDI 90% VDDI 10% VDDI 2.3.5.4 50% TLZ 10% VDDI I/O Speeds This section describes the maximum data rate summary of I/O in worst-case industrial conditions. See the individual I/O standards for operating conditions. Table 18 * Maximum Data Rate Summary Table for Single-Ended I/O in Worst-Case Industrial Conditions I/O MSIO PCI 3.3 V 630 Mbps LVTTL 3.3 V 600 Mbps LVCMOS 3.3 V 600 Mbps LVCMOS 2.5 V 410 420 400 Mbps LVCMOS 1.8 V 295 400 400 Mbps LVCMOS 1.5 V 160 220 235 Mbps LVCMOS 1.2 V 120 160 200 Mbps 400 Mbps LPDDR-LVCMOS 1.8 V mode MSIOD DDRIO Unit Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 20 IGLOO2 FPGA and SmartFusion2 SoC FPGA Table 19 * Maximum Data Rate Summary Table for Voltage-Referenced I/O in Worst-Case Industrial Conditions I/O MSIO DDRIO Unit LPDDR 400 Mbps HSTL1.5 V 400 Mbps 400 Mbps SSTL 1.8 V 667 Mbps SSTL 1.5 V 667 Mbps SSTL 2.5 V Table 20 * 510 MSIOD 700 Maximum Data Rate Summary Table for Differential I/O in Worst-Case Industrial Conditions I/O MSIO LVPECL (input only) 900 LVDS 3.3 V 535 LVDS 2.5 V 535 700 Mbps RSDS 520 700 Mbps BLVDS 500 Mbps MLVDS 500 Mbps Mini-LVDS 520 Table 21 * MSIOD Unit Mbps Mbps 700 Mbps Maximum Frequency Summary Table for Single-Ended I/O in Worst-Case Industrial Conditions I/O MSIO PCI 3.3 V 315 MHz LVTTL 3.3 V 300 MHz LVCMOS 3.3 V 300 MHz LVCMOS 2.5 V 205 210 200 MHz LVCMOS 1.8 V 147.5 200 200 MHz LVCMOS 1.5 V 80 110 118 MHz LVCMOS 1.2 V 60 80 100 MHz 200 MHz LPDDR- LVCMOS 1.8 V mode MSIOD DDRIO Unit Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 21 IGLOO2 FPGA and SmartFusion2 SoC FPGA Table 22 * Maximum Frequency Summary Table for Voltage-Referenced I/O in WorstCase Industrial Conditions I/O MSIO MSIOD DDRIO Unit LPDDR 200 MHz HSTL1.5 V 200 MHz 200 MHz SSTL 1.8 V 334 MHz SSTL 1.5 V 334 MHz SSTL 2.5 V Table 23 * 255 350 Maximum Frequency Summary Table for Differential I/O in Worst-Case Industrial Conditions I/O MSIO LVPECL (input only) 450 MSIOD Unit MHz LVDS 3.3 V 267.5 LVDS 2.5 V 267.5 350 MHz MHz RSDS 260 350 MHz BLVDS 250 MHz MLVDS 250 MHz Mini-LVDS 260 350 MHz Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 22 IGLOO2 FPGA and SmartFusion2 SoC FPGA 2.3.5.5 Detailed I/O Characteristics Table 24 * Input Capacitance, Leakage Current, and Ramp Time Symbol Description Maximum Unit CIN Input capacitance 10 pF IIL (dc) Input current low 400 (Applicable to HSTL/SSTL inputs only) 500 A VDDI = 2.5 V A VDDI = 1.8 V 600 A VDDI = 1.5 V1 10 A Input current low (Applicable to all other digital inputs) IIH (dc) Input current high 400 (Applicable to HSTL/SSTL inputs only) 500 A VDDI = 2.5 V A VDDI = 1.8 V 600 A VDDI = 1.5 V1 10 A 50 ns Input current high (Applicable to all other digital inputs) TRAMPIN2 Input ramp time (Applicable to all digital inputs) 1. 2. Conditions Applicable when I/O pair is programmed with an HSTL/SSTL I/O type on IOP and an unterminated I/O type (LVCMOS, for example) on ION pad. Voltage ramp must be monotonic. The following table lists the minimum and maximum I/O weak pull-up/pull-down resistance values of DDRIO I/O bank at VOH/VOL Level. Table 25 * I/O Weak Pull-up/Pull-down Resistances for DDRIO I/O Bank R(WEAK PULL-UP) at VOH () VDDI Domain R(WEAK PULL-DOWN) at VOL ( Min Max Min Max 2.5 V1, 2 10K 17.8K 9.98K 18K 1.8 V1, 2 10.3K 19.1K 10.3K 19.5K 1.5 V1, 2 10.6K 20.2K 10.6K 21.1K 1.2 V1, 2 11.1K 22.7K 11.2K 24.6K 1. 2. R(WEAK PULL-DOWN) = (VOLspec)/I(WEAK PULL-DOWN MAX). R(WEAK PULL-UP) = (VDDImax - VOHspec)/I(WEAK PULL-UP MIN). Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 23 IGLOO2 FPGA and SmartFusion2 SoC FPGA The following table lists the minimum and maximum I/O weak pull-up/pull-down resistance values of MSIO I/O bank at VOH/VOL Level. Table 26 * I/O Weak Pull-Up/Pull-Down Resistances for MSIO I/O Bank R(WEAK PULL-UP) at VOH ( R(WEAK PULL-DOWN) at VOL ( VDDI Domain Min Max Min Max 3.3 V 9.9K 17.1K 9.98K 17.5K 2.5 V1, 2 10K 17.6K 10.1K 18.4K 1, 2 10.4K 19.1K 10.4K 20.4K 1, 2 10.7K 20.4K 10.8K 22.2K 1.2 V1, 2 11.3K 23.2K 11.5K 26.7K 1. 2. R(WEAK PULL-DOWN) = (VOLspec)/I(WEAK PULL-DOWN MAX). R(WEAK PULL-UP) = (VDDImax - VOHspec)/I(WEAK PULL-UP MIN). 1.8 V 1.5 V The following table lists the minimum and maximum I/O weak pull-up/pull-down resistance values of MSIOD I/O bank at VOH/VOL Level. Table 27 * I/O Weak Pull-up/Pull-down Resistances for MSIOD I/O Bank R(WEAK PULL-UP) at VOH () VDDI Domain Min R(WEAK PULL-DOWN) at VOL () Max Min Max 9.6K 16.6K 9.5K 16.4K 9.7K 17.3K 9.7K 17.1K 9.9K 18K 9.8K 17.6K 10.3K 19.6K 10K 19.1K 2.5 V1, 2 1.8 V1, 2 1.5 V1, 2 1.2 V1, 2 1. 2. R(WEAK PULL-DOWN) = (VOLspec)/I(WEAK PULL-DOWN MAX). R(WEAK PULL-UP) = (VDDImax - VOHspec)/I(WEAK PULL-UP MIN). The following table lists the hysteresis voltage value for schmitt trigger mode input buffers. Table 28 * Schmitt Trigger Input Hysteresis Input Buffer Configuration Hysteresis Value (Typical, unless otherwise noted) 3.3 V LVTTL/LVCMOS/ PCI/PCI-X 0.05 x VDDI (worst-case) 2.5 V LVCMOS 0.05 x VDDI (worst-case) 1.8 V LVCMOS 0.1 x VDDI (worst-case) 1.5 V LVCMOS 60 mV 1.2 V LVCMOS 20 mV Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 24 IGLOO2 FPGA and SmartFusion2 SoC FPGA 2.3.5.6 Single-Ended I/O Standards 2.3.5.6.1 Low Voltage Complementary Metal Oxide Semiconductor (LVCMOS) LVCMOS is a widely used switching standard implemented in CMOS transistors. This standard is defined by JEDEC (JESD 8-5). The LVCMOS standards supported in IGLOO2 FPGAs and SmartFusion2 SoC FPGAs are: LVCMOS12, LVCMOS15, LVCMOS18, LVCMOS25, and LVCMOS33. 2.3.5.6.2 3.3 V LVCMOS/LVTTL LVCMOS 3.3 V or Low-Voltage Transistor-Transistor Logic (LVTTL) is a general standard for 3.3 V applications. Minimum and Maximum DC/AC Input and Output Levels Specification Table 29 * LVTTL/LVCMOS 3.3 V DC Recommended DC Operating Conditions (Applicable to MSIO I/O Bank Only) Parameter Symbol Min Typ Max Unit Supply voltage VDDI 3.15 3.3 3.45 V Table 30 * LVTTL/LVCMOS 3.3 V Input Voltage Specification (Applicable to MSIO I/O Bank Only) Parameter Symbol Min Max Unit DC input logic high VIH (DC) 2.0 3.45 V DC input logic low VIL (DC) -0.3 0.8 V Input current high1 IIH (DC) Input current 1. Table 31 * low1 IIL (DC) See Table 24, page 23. LVCMOS 3.3 V DC Output Voltage Specification (Applicable to MSIO I/O Bank Only) Parameter Symbol Min DC output logic high1 VOH VDDI - 0.4 DC output logic low1 VOL 1. Max Unit V 0.4 V The VOH/VOL test points selected ensure compliance with LVCMOS 3.3 V JESD8-B requirements. Table 32 * LVTTL 3.3 V DC Output Voltage Specification (Applicable to MSIO I/O Bank Only) Parameter Symbol Min DC output logic high VOH 2.4 DC output logic low VOL Table 33 * Max Unit V 0.4 V LVTTL/LVCMOS 3.3 V AC Maximum Switching Speed (Applicable to MSIO I/O Bank Only) Parameter Symbol Max Unit Conditions Maximum data rate (for MSIO I/O bank) DMAX 600 AC loading: 17 pF load, maximum drive/slew Mbps Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 25 IGLOO2 FPGA and SmartFusion2 SoC FPGA Table 34 * LVTTL/LVCMOS 3.3 V AC Test Parameter Specifications (Applicable to MSIO I/O Bank Only) Parameter Symbol Typ Unit Measuring/trip point for data path VTRIP 1.4 V Resistance for enable path (TZH, TZL, THZ, TLZ) RENT 2K Capacitive loading for enable path (TZH, TZL, THZ, TLZ) CENT 5 pF Capacitive loading for data path (TDP) CLOAD 5 pF Table 35 * LVTTL/LVCMOS 3.3 V Transmitter Drive Strength Specifications for MSIO I/O Bank Output Drive Selection VOH (V) VOL (V) IOH (at VOH) mA IOL (at VOL) mA 2 mA VDDI - 0.4 0.4 2 2 4 mA VDDI - 0.4 0.4 4 4 8 mA VDDI - 0.4 0.4 8 8 12 mA VDDI - 0.4 0.4 12 12 16 mA VDDI - 0.4 0.4 16 16 20 mA VDDI - 0.4 0.4 20 20 Note: For a detailed I/V curve, use the corresponding IBIS models: www.microsemi.com/soc/download/ibis/default.aspx. AC Switching Characteristics Worst commercial-case conditions: TJ = 85 C, VDD = 1.14 V, VDDI = 3.0 V Table 36 * Table 37 * LVTTL/LVCMOS 3.3 V Receiver Characteristics for MSIO I/O Bank (Input Buffers) TPYS TPY On-Die Termination (ODT) -1 -Std -1 -Std Unit None 2.262 2.663 2.289 2.695 ns LVTTL/LVCMOS 3.3 V Transmitter Characteristics for MSIO I/O Bank (Output and Tristate Buffers) TZL THZ1 TLZ1 Slew Control -1 -Std -1 -Std -1 -Std -1 -Std -1 -Std Unit 2 mA Slow 3.192 3.755 3.47 4.083 2.969 3.494 1.856 2.183 3.337 3.926 ns 4 mA Slow 2.331 2.742 2.673 3.145 2.526 2.973 3.034 3.569 4.451 5.236 ns 8 mA Slow 2.135 2.511 2.33 2.741 2.297 2.703 4.532 5.331 4.825 5.676 ns 12 mA Slow 2.052 2.414 2.107 2.479 2.162 2.544 5.75 6.764 5.445 6.406 ns 16 mA Slow 2.062 2.425 2.072 2.438 2.145 2.525 5.993 7.05 5.625 6.618 ns 20 mA Slow 2.148 2.527 1.999 2.353 2.088 2.458 6.262 7.367 5.876 6.913 ns 1. TDP TZH Output Drive Selection Delay increases with drive strength are inherent to built-in slew control circuitry for simultaneous switching output (SSO) management. Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 26 IGLOO2 FPGA and SmartFusion2 SoC FPGA 2.3.5.7 2.5 V LVCMOS LVCMOS 2.5 V is a general standard for 2.5 V applications and is supported in IGLOO2 FPGA and SmartFusion2 SoC FPGAs that are in compliance with the JEDEC specification JESD8-5A. Minimum and Maximum DC/AC Input and Output Levels Specification Table 38 * Parameter Symbol Min Typ Max Unit Supply voltage VDDI 2.375 2.5 2.625 V Table 39 * Symbol Min Max Unit DC input logic high (for MSIOD and DDRIO I/O banks) VIH (DC) 1.7 2.625 V DC input logic high (for MSIO I/O VIH (DC) bank) 1.7 3.45 V DC input logic low VIL (DC) -0.3 0.7 V Input current high1 IIH (DC) Input current low1 IIL (DC) See Table 24, page 23. LVCMOS 2.5 V DC Output Voltage Specification Parameter Symbol DC output logic high DC output logic low 1. LVCMOS 2.5 V DC Input Voltage Specification Parameter 1. Table 40 * LVCMOS 2.5 V DC Recommended DC Operating Conditions VOH VOL 1 Min Max Unit VDDI - 0.4 - V 0.4 V 1 The VOH/VOL test points selected ensure compliance with LVCMOS 2.5 V JEDEC8-5A requirements. Table 41 * LVCMOS 2.5 V AC Minimum and Maximum Switching Speed Parameter Symbol Max Unit Conditions Maximum data rate (for DDRIO I/O bank) DMAX 400 Mbps AC loading: 17 pF load, maximum drive/slew Maximum data rate (for MSIO I/O bank) DMAX 410 Mbps AC loading: 17 pF load, maximum drive/slew Maximum data rate (for MSIOD I/O bank) DMAX 420 Mbps AC loading: 17 pF load, maximum drive/slew Table 42 * LVCMOS 2.5 V AC Calibrated Impedance Option Parameter Symbol Typ Unit Supported output driver calibrated impedance (for DDRIO I/O bank) Rodt_cal 75, 60, 50, 33, 25, 20 Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 27 IGLOO2 FPGA and SmartFusion2 SoC FPGA Table 43 * LVCMOS 2.5 V AC Test Parameter Specifications Parameter Symbol Typ Unit Measuring/trip point for data path VTRIP 1.2 V Resistance for enable path (TZH, TZL, THZ, TLZ) RENT 2K Capacitive loading for enable path (TZH, TZL, THZ, TLZ) CENT 5 pF Capacitive loading for data path (TDP) CLOAD 5 pF Table 44 * LVCMOS 2.5 V Transmitter Drive Strength Specifications Output Drive Selection VOH (V) VOL (V) IOH (at VOH) mA IOL (at VOL) mA MSIO I/O Bank DDRIO I/O Bank MSIOD I/O (With Software Default Bank Fixed Code) Min Max 2 mA 2 mA 2 mA VDDI - 0.4 0.4 2 2 4 mA 4 mA 4 mA VDDI - 0.4 0.4 4 4 6 mA 6 mA 6 mA VDDI - 0.4 0.4 6 6 8 mA 8 mA 8 mA VDDI - 0.4 0.4 8 8 12 mA 12 mA 12 mA VDDI - 0.4 0.4 12 12 16 mA VDDI - 0.4 0.4 16 16 16 mA Note: For board design considerations, output slew rates extraction, detailed output buffer resistances, and I/V Curve, use the corresponding IBIS models located at: www.microsemi.com/soc/download/ibis/default.aspx. AC Switching Characteristics Worst commercial-case conditions: TJ = 85 C, VDD = 1.14 V, VDDI = 2.375 V Table 45 * LVCMOS 2.5 V Receiver Characteristics (Input Buffers) TPY TPYS On-Die Termination (ODT) -1 -Std -1 -Std Unit LVCMOS 2.5 V (for DDRIO I/O bank) None 1.823 2.145 1.932 2.274 ns LVCMOS 2.5 V (for MSIO I/O bank) None 2.486 2.925 2.495 2.935 ns LVCMOS 2.5 V (for MSIOD I/O bank) None 2.29 2.694 2.305 2.712 ns Table 46 * LVCMOS 2.5 V Transmitter Characteristics for DDRIO Bank (Output and Tristate Buffers) TZL TDP THZ1 TZH TLZ1 Output Drive Slew Selection Control -1 -Std -1 -Std -1 -Std -1 -Std -1 -Std Unit 2 mA Slow 3.657 4.302 3.393 3.991 3.675 4.323 3.894 4.582 3.552 4.18 ns Medium 3.374 3.97 3.139 3.693 3.396 3.995 3.635 4.277 3.253 3.828 ns Medium fast 3.239 3.811 3.036 3.572 3.261 3.836 3.519 4.141 3.128 3.681 ns Fast 3.793 3.029 3.563 3.246 3.818 3.512 4.132 3.119 3.67 ns 3.224 Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 28 IGLOO2 FPGA and SmartFusion2 SoC FPGA Table 46 * LVCMOS 2.5 V Transmitter Characteristics for DDRIO Bank (Output and Tristate Buffers) -Std -1 -Std -1 -Std -1 -Std -1 -Std Unit 4 mA Slow 3.095 3.641 2.705 3.182 3.088 3.633 4.738 5.575 4.348 5.116 ns Medium 2.825 3.324 2.488 2.927 2.823 3.321 4.492 5.285 4.063 4.781 ns Medium fast 2.701 3.178 2.384 2.804 2.698 3.173 4.364 5.135 3.945 4.642 ns Fast 2.69 3.165 2.377 2.796 2.687 3.161 4.359 5.129 3.94 4.636 ns Slow 2.919 3.434 2.491 2.93 2.902 3.414 5.085 5.983 4.674 5.5 ns Medium 2.65 3.118 2.279 2.681 2.642 3.108 4.845 5.701 4.375 5.148 ns Medium fast 2.529 2.975 2.176 2.56 2.521 2.965 4.724 5.558 4.259 5.011 ns Fast 2.516 2.96 2.168 2.551 2.508 2.95 4.717 5.55 4.251 5.002 ns Slow 2.863 3.368 2.427 2.855 2.844 3.346 5.196 6.114 4.769 5.612 ns Medium 2.599 3.058 2.217 2.608 2.59 3.047 4.952 5.827 4.471 5.261 ns Medium fast 2.483 2.921 2.114 2.487 2.473 2.91 4.832 5.685 4.364 5.134 ns Fast 2.467 2.902 2.106 2.478 2.457 2.89 4.826 5.678 4.348 5.116 ns Slow 2.747 3.232 2.296 2.701 2.724 3.204 5.39 6.342 4.938 5.81 ns Medium 2.493 2.934 2.102 2.473 2.483 2.921 5.166 6.078 4.65 5.471 ns Medium fast 2.382 2.803 2.006 2.36 2.371 2.789 5.067 5.962 4.546 5.349 ns Fast 2.369 2.787 1.999 2.352 2.357 2.773 5.063 5.958 4.538 5.339 ns Slow 2.677 3.149 2.213 2.604 2.649 3.116 5.575 6.56 5.08 5.977 ns Medium 2.432 2.862 2.028 2.386 2.421 2.848 5.372 6.32 4.801 5.649 ns Medium fast 2.324 2.734 1.937 2.278 2.311 2.718 5.297 6.233 4.7 5.531 ns Fast 2.721 1.929 2.269 2.3 2.706 5.296 6.231 4.699 5.529 ns 8 mA 12 mA 16 mA 1. 2.313 TZL TZH TLZ1 -1 6 mA TDP THZ1 Output Drive Slew Selection Control Delay increases with drive strength are inherent to built-in slew control circuitry for simultaneous switching output (SSO) management. Table 47 * LVCMOS 2.5 V Transmitter Characteristics for MSIO Bank (Output and Tristate Buffers) TZL THZ1 TLZ1 -1 -Std -1 -Std -1 -Std -1 -Std -1 -Std Unit 2 mA Slow 3.48 4.095 3.855 4.534 3.785 4.453 2.12 2.494 3.45 4.059 ns 4 mA Slow 2.583 3.039 3.042 3.579 3.138 3.691 4.143 4.874 4.687 5.513 ns 6 mA Slow 2.392 2.815 2.669 3.139 2.82 3.317 4.909 5.775 5.083 5.98 ns 8 mA Slow 2.309 2.717 2.565 3.017 2.74 3.223 5.812 6.837 5.523 6.497 ns 12 mA Slow 2.333 2.745 2.437 2.867 2.626 3.089 6.131 7.213 5.712 6.72 ns 16 mA Slow 2.412 2.838 2.335 2.747 2.533 2.979 6.54 7.694 6.007 7.067 ns 1. TDP TZH Output Drive Slew Selection Control Delay increases with drive strength are inherent to built-in slew control circuitry for simultaneous switching output (SSO) management. Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 29 IGLOO2 FPGA and SmartFusion2 SoC FPGA Table 48 * LVCMOS 2.5 V Transmitter Characteristics for MSIOD Bank (Output and Tristate Buffers) TZL TZH TLZ1 -1 -Std -1 -Std -1 -Std -1 -Std -1 -Std Unit 2 mA Slow 2.206 2.596 2.678 3.15 2.64 3.106 4.935 5.805 4.74 5.576 ns 4 mA Slow 1.835 2.159 2.242 2.637 2.256 2.654 5.413 6.368 5.15 6.059 ns 6 mA Slow 1.709 2.01 2.132 2.508 2.167 2.549 5.813 6.838 5.499 6.469 ns 8 mA Slow 1.63 1.918 1.958 2.303 2.012 2.367 6.226 7.324 5.816 6.842 ns 12 mA Slow 1.648 1.939 1.86 2.187 1.921 2.259 6.519 7.669 6.027 7.09 ns 1. TDP THZ1 Output Drive Slew Selection Control Delay increases with drive strength are inherent to built-in slew control circuitry for simultaneous switching output (SSO) management. 2.3.5.8 1.8 V LVCMOS LVCMOS 1.8 is a general standard for 1.8 V applications and is supported in IGLOO2 FPGAs and SmartFusion2 SoC FPGAs in compliance to the JEDEC specification JESD8-7A. Minimum and Maximum DC/AC Input and Output Levels Specification Table 49 * LVCMOS 1.8 V DC Recommended Operating Conditions Parameter Symbol Min Typ Max Unit LVCMOS 1.8 V DC Recommended Operating Conditions Supply voltage Table 50 * VDDI V Min Max Unit DC input logic high (for MSIOD VIH (DC) and DDRIO I/O banks) 0.65 x VDDI 1.89 V DC input logic high (for MSIO I/O bank) VIH (DC) 0.65 x VDDI 3.45 V DC input logic low VIL (DC) -0.3 0.35 x VDDI V Input current Symbol high1 Input current low1 1. IIH (DC) - IIL (DC) - See Table 24, page 23. Table 51 * LVCMOS 1.8 V DC Output Voltage Specification Parameter Symbol Min DC output logic high VOH VDDI - 0.45 DC output logic low VOL Max Unit V 0.45 V LVCMOS 1.8 V Minimum and Maximum AC Switching Speed Parameter Maximum data rate (for DDRIO I/O bank)1 Maximum data rate (for MSIO I/O bank) Maximum data rate (for MSIOD I/O 1. 1.8 1.89 LVCMOS 1.8 V DC Input Voltage Specification Parameter Table 52 * 1.710 bank)1 Symbol Max Unit Conditions DMAX 400 Mbps AC loading: 17 pF load, maximum drive/slew DMAX 295 Mbps AC loading: 17 pF load, maximum drive/slew DMAX 400 Mbps AC loading: 17 pF load, maximum drive/slew Maximum Data Rate applies for Drive Strength 8 mA and above, All Slews. Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 30 IGLOO2 FPGA and SmartFusion2 SoC FPGA Table 53 * Symbol Typ Unit Supported output driver calibrated impedance (for DDRIO I/O bank) Rodt_cal 75, 60, 50, 33, 25, 20 Table 54 * Table 55 * LVCMOS 1.8 V AC Calibrated Impedance Option Parameter LVCMOS 1.8 V AC Test Parameter Specifications Parameter Symbol Typ Unit Measuring/trip point for data path VTRIP 0.9 V Resistance for enable path (TZH, TZL, THZ, TLZ) RENT 2k Capacitive loading for enable path (TZH, TZL, THZ, CENT TLZ) 5 pF Capacitive loading for data path (TDP) 5 pF CLOAD LVCMOS 1.8 V Transmitter Drive Strength Specifications Output Drive Selection VOH (V) VOL (V) MSIO I/O Bank MSIOD I/O Bank DDRIO I/O Bank Min Max IOH (at VOH) mA IOL (at VOL) mA 2 mA 2 mA 2 mA VDDI - 0.45 0.45 2 2 4 mA 4 mA 4 mA VDDI - 0.45 0.45 4 4 6 mA 6 mA 6 mA VDDI - 0.45 0.45 6 6 8 mA 8 mA 8 mA VDDI - 0.45 0.45 8 8 10 mA 10 mA 10 mA VDDI - 0.45 0.45 10 10 12 mA VDDI - 0.45 0.45 12 12 VDDI - 0.45 0.45 16 16 12 mA 16 1. mA1 16 mA drive strengths, all slews, meets LPDDR JEDEC electrical compliance. AC Switching Characteristics Worst commercial-case conditions: TJ = 85 C, VDD = 1.14 V, VDDI = 1.71 V Table 56 * LVCMOS 1.8 V Receiver Characteristics (Input Buffers) LVCMOS 1.8 V (for DDRIO I/O bank with Fixed Codes) LVCMOS 1.8 V (for MSIO I/O bank) LVCMOS 1.8 V (for MSIOD I/O bank) TPYS TPY On-Die Termination (ODT) -1 -Std -1 -Std Unit None 1.968 2.315 2.099 2.47 ns None 2.898 3.411 2.883 3.393 ns 50 3.05 3.59 3.044 3.583 ns 75 2.999 3.53 2.987 3.516 ns 150 2.947 3.469 2.933 3.452 ns None 2.611 3.071 2.598 3.057 ns 50 2.775 3.264 2.775 3.265 ns 75 2.72 3.2 2.712 3.19 ns 150 2.666 3.137 2.655 3.123 ns Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 31 IGLOO2 FPGA and SmartFusion2 SoC FPGA Table 57 * LVCMOS 1.8 V Transmitter Characteristics for DDRIO I/O Bank with Fixed Code (Output and Tristate Buffers) TZL Output Drive Slew Selection Control -1 -Std -1 2 mA Slow 4.234 4.981 Medium 3.824 4 mA 6 mA 8 mA 10 mA 12 mA 16 mA 1. TDP TLZ1 -1 -Std -1 -Std -1 -Std Unit 3.646 4.29 4.245 4.995 4.908 5.774 4.434 5.216 ns 4.498 3.282 3.861 3.834 4.511 4.625 5.441 4.116 4.843 ns Medium fast 3.627 4.267 3.111 3.637 4.279 4.481 5.272 3.984 4.687 ns Fast 3.605 4.241 3.097 3.644 3.615 4.253 4.472 5.262 3.973 4.674 ns Slow 3.923 4.615 3.314 3.9 3.918 4.61 5.403 6.356 4.894 5.757 ns Medium 3.518 4.138 2.961 3.484 3.515 4.135 5.121 6.025 4.561 5.366 ns Medium fast 3.321 3.907 2.783 3.275 3.317 3.903 4.966 5.843 4.426 5.206 ns Fast 3.301 3.883 2.77 3.259 3.296 3.878 4.957 5.831 4.417 5.196 ns Slow 3.71 4.364 3.104 3.652 3.702 4.355 5.62 6.612 5.08 5.977 ns Medium 3.333 3.921 2.779 3.27 3.325 3.913 5.346 6.289 4.777 5.62 ns Medium fast 3.155 3.712 2.62 3.083 3.146 3.702 5.21 6.13 4.657 5.479 ns Fast 3.134 3.688 2.608 3.068 3.125 3.677 5.202 6.12 4.648 5.468 ns Slow 3.619 4.258 3.007 3.538 3.607 4.244 5.815 6.841 5.249 6.175 ns Medium 3.246 3.819 2.686 3.16 3.236 3.807 5.542 6.52 4.936 5.807 ns Medium fast 3.066 3.607 2.525 2.971 3.054 3.593 5.405 6.359 4.811 5.66 ns Fast 3.046 3.584 2.513 2.957 3.034 3.57 5.401 6.353 4.803 5.651 ns Slow 3.498 4.115 2.878 3.386 3.481 4.096 6.046 7.113 5.444 6.404 ns Medium 3.138 3.692 2.569 3.023 3.126 3.678 5.782 6.803 5.129 6.034 ns Medium fast 2.966 3.489 2.414 2.841 2.951 3.472 5.666 6.665 5.013 5.897 ns Fast 2.945 3.464 2.401 2.826 2.93 3.448 5.659 6.658 5.003 5.886 ns Slow 3.417 4.02 2.807 3.303 3.401 4.002 6.083 7.156 5.464 6.428 ns Medium 3.076 3.618 2.519 2.964 3.063 3.604 5.828 6.856 5.176 6.089 ns Medium fast 2.913 3.427 2.376 2.795 2.898 3.41 5.725 6.736 5.072 5.966 ns Fast 2.894 3.405 2.362 2.78 2.879 3.388 5.715 6.724 5.064 5.957 ns Slow 3.366 3.96 2.751 3.237 3.348 3.939 6.226 7.324 5.576 6.56 ns Medium 3.03 3.565 2.47 2.906 3.017 3.55 5.981 7.036 5.282 6.214 ns Medium fast 2.87 3.377 2.328 2.739 2.854 3.358 5.895 6.935 5.18 6.094 ns Fast 3.357 2.314 2.723 2.837 3.338 5.889 6.929 5.177 6.09 ns 2.853 -Std THZ1 TZH 3.66 Delay increases with drive strength are inherent to built-in slew control circuitry for simultaneous switching output (SSO) management. Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 32 IGLOO2 FPGA and SmartFusion2 SoC FPGA Table 58 * LVCMOS 1.8 V Transmitter Characteristics for MSIO I/O Bank TDP TZL Output Drive Selection Slew Control -1 -Std -1 2 mA Slow 3.441 4.047 4 mA Slow 3.218 6 mA Slow 8 mA THZ1 TZH -1 -Std -1 -Std -1 -Std Unit 4.165 4.9 4.413 5.192 4.891 5.755 5.138 6.044 ns 3.786 3.642 4.284 3.941 4.636 5.665 6.665 5.568 6.551 ns 3.141 3.694 3.501 4.118 3.823 4.498 6.587 7.75 6.032 7.096 ns Slow 3.165 3.723 3.319 3.904 3.654 4.298 6.898 8.115 6.216 7.313 ns 10 mA Slow 3.202 3.767 3.278 3.857 3.616 4.254 7.25 8.529 6.435 7.571 ns 12 mA Slow 3.277 3.855 3.175 3.736 3.519 4.139 7.392 8.697 6.538 7.692 ns 1. Delay increases with drive strength are inherent to built-in slew control circuitry for simultaneous switching output (SSO) management. Table 59 * LVCMOS 1.8 V Transmitter Characteristics for MSIOD I/O Bank TDP TZL Output Drive Slew Selection Control -1 -Std -1 2 mA Slow 2.725 3.206 4 mA Slow 2.242 6 mA Slow 8 mA 10 mA 1. -Std TLZ1 THZ1 TZH -Std TLZ1 -1 -Std -1 -Std -1 -Std Unit 3.316 3.901 3.484 4.099 5.204 6.123 4.997 5.88 ns 2.638 2.777 3.267 2.947 3.466 5.729 6.74 5.448 6.41 ns 1.995 2.347 2.466 2.901 2.63 3.094 6.372 7.496 5.987 7.043 ns Slow 2.001 2.354 2.44 2.6 3.058 6.633 7.804 6.193 7.286 ns Slow 2.025 2.382 2.312 2.719 2.47 2.906 6.94 8.165 6.412 7.544 ns 2.87 Delay increases with drive strength are inherent to built-in slew control circuitry for simultaneous switching output (SSO) management. 2.3.5.9 1.5 V LVCMOS LVCMOS 1.5 is a general standard for 1.5 V applications and is supported in IGLOO2 FPGAs and SmartFusion2 SoC FPGAs in compliance to the JEDEC specification JESD8-11A. Minimum and Maximum DC/AC Input and Output Levels Specification Table 60 * LVCMOS 1.5 V DC Recommended Operating Conditions Parameter Symbol Min Typ Max Unit Supply voltage VDDI 1.425 1.5 1.575 V Table 61 * LVCMOS 1.5 V DC Input Voltage Specification Parameter Min Max Unit DC input logic high for (MSIOD and DDRIO VIH (DC) I/O banks) 0.65 x VDDI 1.575 V DC input logic high (for MSIO I/O bank) VIH (DC) 0.65 x VDDI 3.45 V DC input logic low VIL (DC) -0.3 0.35 x VDDI V Input current high1 IIH (DC) - Input current low1 IIL (DC - 1. Symbol See Table 24, page 23. Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 33 IGLOO2 FPGA and SmartFusion2 SoC FPGA Table 62 * Table 63 * LVCMOS 1.5 V DC Output Voltage Specification Parameter Symbol Min Max DC output logic high VOH VDDI x 0.75 DC output logic low VOL Unit V VDDI x 0.25 V LVCMOS 1.5 V AC Minimum and Maximum Switching Speed Parameter Symbol Max Unit Conditions Maximum data rate (for DDRIO I/O bank) DMAX 235 Mbps AC loading: 17 pF load, maximum drive/slew Maximum data rate (for MSIO I/O bank) DMAX 160 Mbps AC loading: 17 pF load, maximum drive/slew Maximum data rate (for MSIOD I/O bank) DMAX 220 Mbps AC loading: 17 pF load, maximum drive/slew Table 64 * Parameter Symbol Supported output driver calibrated impedance (for DDRIO I/O bank) RODT_CA 75, 60, L 50, 40 Table 65 * Table 66 * LVCMOS 1.5 V AC Calibrated Impedance Option Unit LVCMOS 1.5 V AC Test Parameter Specifications Parameter Symbol Typ Unit Measuring/trip point VTRIP 0.75 V Resistance for enable path (TZH, TZL, THZ, TLZ) RENT 2K Capacitive loading for enable path (TZH, TZL, THZ, TLZ) CENT 5 pF Capacitive loading for data path (TDP) CLOAD 5 pF LVCMOS 1.5 V Transmitter Drive Strength Specifications Output Drive Selection VOH (V) VOL (V) Max IOH (at VOH) mA IOL (at VOL) mA VDDI x 0.75 VDDI x 0.25 2 2 VDDI x 0.75 VDDI x 0.25 4 4 VDDI x 0.75 VDDI x 0.25 6 6 8 mA VDDI x 0.75 VDDI x 0.25 8 8 10 mA VDDI x 0.75 VDDI x 0.25 10 10 12 mA VDDI x 0.75 VDDI x 0.25 12 12 MSIO I/O Bank MSIOD I/O Bank DDRIO I/O Bank Min 2 mA 2 mA 2 mA 4 mA 4 mA 4 mA 6 mA 6 mA 6 mA 8 mA Typ Note: For a detailed I/V curve, use the corresponding IBIS models: www.microsemi.com/soc/download/ibis/default.aspx. Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 34 IGLOO2 FPGA and SmartFusion2 SoC FPGA AC Switching Characteristics Worst commercial-case conditions: TJ = 85 C, VDD = 1.14 V, VDDI = 1.425 V Table 67 * LVCMOS 1.5 V Receiver Characteristics for DDRIO I/O Bank with Fixed Codes (Input Buffers) None 2.051 Table 68 * -Std -1 -Std Unit 2.413 2.086 2.455 ns LVCMOS 1.5 V Receiver Characteristics for MSIO I/O Bank (Input Buffers) On-Die Termination -1 (ODT) TPYS TPY -Std -1 -Std Unit None 3.311 3.896 3.285 3.865 ns 50 3.654 4.299 3.623 4.263 ns 75 3.533 4.156 3.501 4.119 ns 150 3.415 4.018 3.388 3.986 ns Table 69 * LVCMOS 1.5 V Receiver Characteristics for MSIOD I/O Bank (Input Buffers) On-Die Termination -1 (ODT) Table 70 * TPYS TPY On-Die Termination -1 (ODT) TPYS TPY -Std -1 -Std Unit None 2.959 3.481 2.93 3.447 ns 50 3.298 3.88 3.268 3.845 ns 75 3.162 3.719 3.128 3.68 ns 150 3.053 3.592 3.021 3.554 ns LVCMOS 1.5 V Transmitter Characteristics for DDRIO I/O Bank (Output and Tristate Buffers) TZL THZ1 TLZ1 -1 -Std -1 -Std -1 -Std -1 -Std -1 -Std Unit 2 mA Slow 5.122 6.026 4.31 5.07 5.145 6.052 5.258 6.186 4.672 5.496 ns Medium 4.58 5.389 3.86 4.54 4.6 5.411 4.977 5.855 4.357 5.126 ns Medium fast 4.323 5.086 3.629 4.269 4.341 5.107 4.804 5.652 4.228 4.974 ns Fast 4.296 5.054 3.609 4.245 4.314 5.075 4.791 5.636 4.219 4.963 ns Slow 4.449 5.235 3.707 4.361 4.443 5.227 6.058 7.127 5.458 6.421 ns Medium 3.961 4.66 3.264 3.839 3.954 4.651 5.778 6.797 5.116 6.018 ns Medium fast 3.729 4.387 3.043 3.579 3.72 4.376 5.63 6.624 4.981 5.86 ns Fast 3.704 4.358 3.027 3.56 3.695 4.347 5.624 6.617 4.973 5.851 ns 4 mA TDP TZH Output Drive Slew Selection Control Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 35 IGLOO2 FPGA and SmartFusion2 SoC FPGA Table 70 * LVCMOS 1.5 V Transmitter Characteristics for DDRIO I/O Bank (Output and Tristate Buffers) -Std -1 -Std -1 -Std -1 -Std -1 -Std Unit 6 mA Slow 4.244 4.993 3.465 4.076 4.233 4.979 6.39 7.518 5.736 6.748 ns Medium 3.774 4.44 3.05 3.587 3.762 4.426 6.114 7.193 5.397 6.35 ns Medium fast 3.544 4.17 2.839 3.339 3.529 4.152 5.978 7.033 5.27 6.2 ns Fast 3.519 4.14 2.82 3.317 3.504 4.122 5.965 7.017 5.259 6.187 ns Slow 4.099 4.823 3.311 3.894 4.087 4.807 6.584 7.746 5.854 6.888 ns Medium 3.656 4.301 2.927 3.443 3.642 4.284 6.311 7.425 5.553 6.533 ns Medium fast 3.437 4.044 2.731 3.213 3.42 4.023 6.182 7.273 5.435 6.394 ns Fast 3.41 4.012 2.715 3.193 3.393 3.991 6.178 7.269 5.425 6.383 ns Slow 4.029 4.74 3.238 3.809 4.015 4.723 6.732 7.921 5.965 7.018 ns 10 mA 12 mA 1. TZL TZH TLZ1 -1 8 mA TDP THZ1 Output Drive Slew Selection Control Medium 3.601 4.237 2.867 3.372 3.586 4.218 6.473 7.615 5.669 6.669 ns Medium fast 3.384 3.981 2.672 3.143 3.365 3.958 6.351 7.471 5.55 6.529 ns Fast 3.357 3.949 2.655 3.123 3.338 3.927 6.345 7.464 5.54 6.518 ns Slow 3.974 4.675 3.196 3.759 3.958 4.656 6.842 8.049 6.068 7.139 ns Medium 3.55 4.176 2.827 3.326 3.534 4.157 6.584 7.746 5.751 6.766 ns Medium fast 3.345 3.935 2.638 3.103 3.325 3.911 6.488 7.633 5.641 6.637 ns Fast 3.316 3.902 2.621 3.083 3.297 3.878 6.486 7.63 5.626 6.619 ns Delay increases with drive strength are inherent to built-in slew control circuitry for simultaneous switching output (SSO) management. Table 71 * LVCMOS 1.5 V Transmitter Characteristics for MSIO I/O Bank (Output and Tristate Buffers) TZL TZH TLZ1 -1 -Std -1 -Std -1 -Std -1 -Std -1 -Std Unit 2 mA Slow 4.423 5.203 5.397 6.35 5.686 6.69 5.609 6.599 5.561 6.542 ns 4 mA Slow 4.05 4.765 4.503 5.298 4.92 5.788 7.358 8.657 6.525 7.677 ns 6 mA Slow 4.081 4.801 4.259 5.012 4.699 5.528 7.659 9.011 6.709 7.893 ns 8 mA Slow 4.234 4.98 4.068 4.786 4.521 5.319 8.218 9.668 7.05 8.294 ns 1. TDP THZ1 Output Drive Slew Selection Control Delay increases with drive strength are inherent to built-in slew control circuitry for simultaneous switching output (SSO) management. Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 36 IGLOO2 FPGA and SmartFusion2 SoC FPGA Table 72 * LVCMOS 1.5 V Transmitter Characteristics for MSIOD I/O Bank (Output and Tristate Buffers) TZL THZ1 TLZ1 -1 -Std -1 -Std -1 -Std -1 -Std -1 -Std Unit 2 mA Slow 2.735 3.218 3.371 3.966 3.618 4.257 6.03 7.095 5.705 6.712 ns 4 mA Slow 2.426 2.854 2.992 3.521 3.221 3.79 6.738 7.927 6.298 7.41 ns 6 mA Slow 2.433 2.862 2.81 3.306 3.031 3.566 7.123 8.38 6.596 7.76 ns 1. TDP TZH Output Drive Slew Selection Control Delay increases with drive strength are inherent to built-in slew control circuitry for simultaneous switching output (SSO) management. 2.3.5.10 1.2 V LVCMOS LVCMOS 1.2 is a general standard for 1.2 V applications and is supported in IGLOO2 FPGAs and SmartFusion2 SoC FPGAs in compliance to the JEDEC specification JESD8-12A. Minimum and Maximum DC/AC Input and Output Levels Specification Table 73 * Parameter Symbol Min Typ Max Unit Supply voltage VDDI 1.140 1.2 1.26 V Table 74 * LVCMOS 1.2 V DC Input Voltage Specification Parameter Symbol Min Max Unit DC input logic high (for MSIOD and DDRIO I/O banks) VIH (DC) 0.65 x VDDI 1.26 V DC input logic high (for MSIO I/O bank) VIH (DC) 0.65 x VDDI 3.45 V DC input logic low VIL (DC) -0.3 0.35 x VDDI V Input current high1 IIH (DC) Input current low1 IIL (DC) 1. See Table 24, page 23. Table 75 * Table 76 * LVCMOS 1.2 V DC Recommended DC Operating Conditions LVCMOS 1.2 V DC Output Voltage Specification Parameter Symbol Min Max DC output logic high VOH VDDI x 0.75 DC output logic low VOL Unit V VDDI x 0.25 V LVCMOS 1.2 V Minimum and Maximum AC Switching Speed Parameter Symbol Max Unit Conditions Maximum data rate (for DDRIO I/O bank) DMAX 200 Mbps AC loading: 17 pF load, maximum drive/slew Maximum data rate (for MSIO I/O bank) DMAX 120 Mbps AC loading: 17 pF load, maximum drive/slew Maximum data rate (for MSIOD I/O bank) DMAX 160 Mbps AC loading: 17 pF load, maximum drive/slew Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 37 IGLOO2 FPGA and SmartFusion2 SoC FPGA Table 77 * Parameter Symbol Typ Unit Supported output driver calibrated impedance (for DDRIO I/O bank) RODT_CAL 75, 60, 50, 40 Table 78 * Table 79 * LVCMOS 1.2 V AC Calibrated Impedance Option LVCMOS 1.2 V AC Test Parameter Specifications Parameter Symbol Typ Unit Measuring/trip point VTRIP 0.6 V Resistance for enable path (TZH, TZL, THZ, TLZ) RENT 2K Capacitive loading for enable path (TZH, TZL, THZ, TLZ) CENT 5 pF Capacitive loading for data path (TDP) CLOAD 5 pF LVCMOS 1.2 V Transmitter Drive Strength Specifications Output Drive Selection VOH (V) VOL (V) MSIO I/O Bank MSIOD I/O Bank DDRIO I/O Bank Min Max IOH (at VOH) mA IOL (at VOL) mA 2 mA 2 mA 2 mA VDDI x 0.75 VDDI x 0.25 2 2 4 mA 4 mA 4 mA VDDI x 0.75 VDDI x 0.25 4 4 6 mA VDDI x 0.75 VDDI x 0.25 6 6 Note: For a detailed I/V curve, use the corresponding IBIS models: www.microsemi.com/soc/download/ibis/default.aspx. AC Switching Characteristics Worst commercial-case conditions: TJ = 85 C, VDD = 1.14 V, VDDI = 1.14 V Table 80 * LVCMOS 1.2 V Receiver Characteristics for DDRIO I/O Bank with Fixed Code (Input Buffers) TPY TPYS On-Die Termination (ODT) -1 -Std -1 -Std Unit None 2.448 2.88 2.466 2.901 ns Table 81 * LVCMOS 1.2 V Receiver Characteristics for MSIO I/O Bank (Input Buffers) TPYS TPY On-Die Termination ODT) -1 -Std -1 -Std Unit None 4.714 5.545 4.675 5.5 ns 50 6.668 7.845 6.579 7.74 ns 75 5.832 6.862 5.76 6.777 ns 150 5.162 6.073 5.111 6.014 ns Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 38 IGLOO2 FPGA and SmartFusion2 SoC FPGA Table 82 * LVCMOS 1.2 V Receiver Characteristics for MSIOD I/O Bank (Input Buffers) TPY On-Die Termination (ODT) Table 83 * -1 -Std Unit 4.154 4.887 4.114 4.84 ns 6.918 8.139 6.806 8.008 ns 75 5.613 6.603 5.533 6.509 ns 150 4.716 5.549 4.657 5.479 ns LVCMOS 1.2 V Transmitter Characteristics for DDRIO I/O Bank (Output and Tristate Buffers) TZL -Std -1 2 mA Slow 6.713 7.897 Medium 5.912 Medium fast 5.5 Fast 1. -1 50 -1 6 mA -Std None Output Drive Slew Selection Control 4 mA TPYS TDP -Std THZ1 TZH TLZ1 -1 -Std -1 -Std -1 -Std Unit 5.362 6.308 6.723 7.909 7.233 8.51 6.375 7.499 ns 6.955 4.616 5.43 5.915 6.959 6.887 8.102 6.009 7.069 ns 6.469 4.231 4.978 5.5 6.471 6.672 7.849 5.835 6.865 ns 5.462 6.426 4.194 4.935 5.463 6.427 6.646 7.819 5.828 6.857 ns Slow 6.109 7.186 4.708 5.539 6.098 7.174 8.005 9.418 7.033 8.274 ns Medium 5.355 6.299 4.034 4.746 5.338 6.28 7.637 8.985 6.672 7.849 ns Medium fast 4.953 5.826 3.685 4.336 4.932 5.802 7.44 8.752 6.499 7.646 ns Fast 4.911 5.777 3.658 4.303 4.89 5.754 7.427 8.737 6.488 7.632 ns Slow 5.89 6.929 4.506 5.301 5.874 6.911 8.337 9.808 7.315 8.605 ns Medium 5.176 6.089 3.862 4.543 5.155 6.065 7.986 9.394 6.943 8.168 ns Medium fast 4.792 5.637 3.523 4.145 4.765 5.606 7.808 9.186 6.775 7.97 ns Fast 4.754 5.593 3.486 4.101 4.728 5.563 7.777 9.149 6.769 7.963 ns Delay increases with drive strength are inherent to built-in slew control circuitry for simultaneous switching output (SSO) management. Table 84 * LVCMOS 1.2 V Transmitter Characteristics for MSIO I/O Bank (Output and Tristate Buffers) Output Drive Slew Selection Control TZL TDP -1 -Std -1 -Std THZ1 TZH -1 -Std -1 -Std TLZ1 -1 -Std Unit 2 mA Slow 6.746 7.937 7.458 8.774 8.172 9.614 9.867 11.608 8.393 9.874 ns 4 mA Slow 7.068 8.315 6.678 7.857 7.474 8.793 10.986 12.924 9.043 10.638 ns 1. Delay increases with drive strength are inherent to built-in slew control circuitry for simultaneous switching output (SSO) management. Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 39 IGLOO2 FPGA and SmartFusion2 SoC FPGA Table 85 * LVCMOS 1.2 V Transmitter Characteristics for MSIOD I/O Bank (Output and Tristate Buffers) Output Drive Slew Selection Control TDP -1 TZL -Std -1 THZ1 TZH -Std -1 -Std -1 TLZ1 -Std -1 -Std Unit 2 mA Slow 3.883 4.568 4.868 5.726 5.329 6.269 7.994 9.404 7.527 8.855 ns 4 mA Slow 3.774 4.44 4.188 4.926 4.613 5.426 8.972 10.555 8.315 9.782 ns 1. Delay increases with drive strength are inherent to built-in slew control circuitry for simultaneous switching output (SSO) management. 2.3.5.11 3.3 V PCI/PCIX Peripheral Component Interface (PCI) for 3.3 V standards specify support for 33 MHz and 66 MHz PCI bus applications. Minimum and Maximum DC/AC Input and Output Levels Specification (Applicable to MSIO Bank Only) Table 86 * PCI/PCI-X DC Recommended Operating Conditions Parameter Symbol Min Typ Max Unit Supply voltage VDDI 3.15 3.3 3.45 V Table 87 * PCI/PCI-X DC Input Voltage Specification Parameter DC input voltage Min Max Unit VI 0 3.45 V Input current high1 IIH(DC) Input current low1 IIL(DC) 1. See Table 24, page 23. Table 88 * Table 89 * Symbol PCI/PCI-X DC Output Voltage Specification Parameter Symbol Min Typ Max Unit DC output logic high VOH Per PCI specification V DC output logic low VOL Per PCI specification V PCI/PCI-X Minimum and Maximum AC Switching Speed Parameter Symbol Max Unit Conditions Maximum data rate (MSIO I/O bank) DMAX 630 Mbps AC Loading: per JEDEC specifications Table 90 * PCI/PCI-X AC Test Parameter Specifications Parameter Symbol Typ Unit Measuring/trip point for data path (falling edge) VTRIP 0.615 x VDDI V Measuring/trip point for data path (rising edge) VTRIP 0.285 x VDDI V Resistance for data test path RTT_TEST 25 Resistance for enable path (TZH, TZL, THZ, TLZ) RENT 2K Capacitive loading for enable path (TZH, TZL, THZ, TLZ) CENT 5 pF Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 40 IGLOO2 FPGA and SmartFusion2 SoC FPGA Table 90 * PCI/PCI-X AC Test Parameter Specifications Capacitive loading for data path (TDP) CLOAD 10 pF AC Switching Characteristics Worst commercial-case conditions: TJ = 85 C, VDD = 1.14 V, VDDI = 3.0 V Table 91 * PCI/PCIX AC Switching Characteristics for Receiver for MSIO I/O Bank (Input Buffers) TPYS TPY On-Die Termination (ODT) -1 -Std -1 -Std Unit None 2.229 2.623 2.238 2.633 ns Table 92 * PCI/PCIX AC switching Characteristics for Transmitter for MSIO I/O Bank (Output and Tristate Buffers) TZL TDP -1 -Std -1 -Std 2.146 2.525 2.043 2.404 TZH -1 2.084 THZ -Std -1 TLZ -Std -1 2.452 6.095 7.171 5.558 -Std Unit 6.539 ns 2.3.6 Memory Interface and Voltage Referenced I/O Standards This section describes High-Speed Transceiver Logic (HSTL) memory interface and voltage reference I/O standards. 2.3.6.1 High-Speed Transceiver Logic (HSTL) The HSTL standard is a general purpose high-speed bus standard sponsored by IBM (EIA/JESD8-6). IGLOO2 FPGA and SmartFusion2 SoC FPGA devices support two classes of the 1.5 V HSTL. These differential versions of the standard require a differential amplifier input buffer and a push-pull output buffer. Minimum and Maximum DC/AC Input and Output Levels Specification (Applicable to DDRIO Bank Only) Table 93 * HSTL Recommended DC Operating Conditions Parameter Symbol Min Typ Max Unit Supply voltage VDDI 1.425 1.5 1.575 V Termination voltage VTT 0.698 0.750 0.803 V Input reference voltage VREF 0.698 0.750 0.803 V Table 94 * HSTL DC Input Voltage Specification Parameter Symbol Min Max Unit DC input logic high VIH (DC) VREF + 0.1 1.575 V DC input logic low VIL (DC) -0.3 VREF - 0.1 V Input current high1 IIH (DC) Input current low1 IIL (DC) 1. See Table 24, page 23. Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 41 IGLOO2 FPGA and SmartFusion2 SoC FPGA Table 95 * HSTL DC Output Voltage Specification Applicable to DDRIO I/O Bank Only Parameter Symbol Min VDDI - 0.4 Max Unit 0.4 V HSTL Class I DC output logic high VOH DC output logic low VOL V Output minimum source DC current (MSIO and DDRIO I/O banks) IOH at VOH -8.0 mA Output minimum sink current (MSIO and DDRIO I/O banks) IOL at VOL 8.0 mA DC output logic high VOH VDDI - 0.4 V DC output logic low VOL Output minimum source DC current IOH at VOH -16.0 mA Output minimum sink current IOL at VOL 16.0 mA HSTL Class II Table 96 * 0.4 HSTL DC Differential Voltage Specification Parameter Symbol Min Unit DC input differential voltage VID (DC) 0.2 V Table 97 * HSTL AC Differential Voltage Specifications Parameter Symbol Min AC input differential voltage VDIFF 0.4 AC differential cross point voltage Vx 0.68 Table 98 * Max Unit V 0.9 V HSTL Minimum and Maximum AC Switching Speed Parameter Symbol Max Unit Maximum data rate DMAX 400 Mbps AC loading: per JEDEC specifications Table 99 * V Conditions HSTL Impedance Specification Parameter Symbol Typ Unit Conditions Supported output driver calibrated impedance (for DDRIO I/O bank) RREF 25.5, 47.8 Reference resistance = 191 Effective impedance value (ODT for DDRIO I/O bank only) RTT 47.8 Reference resistance = 191 Table 100 * HSTL AC Test Parameter Specification Parameter Symbol Typ Unit Measuring/trip point for data path VTRIP 0.75 V Resistance for enable path (TZH, TZL, THZ, TLZ) RENT 2K Capacitive loading for enable path (TZH, TZL, THZ, TLZ) CENT 5 pF Reference resistance for data test path for HSTL15 Class I (TDP) RTT_TEST 50 Reference resistance for data test path for HSTL15 Class II (TDP) RTT_TEST 25 Capacitive loading for data path (TDP) CLOAD 5 pF Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 42 IGLOO2 FPGA and SmartFusion2 SoC FPGA AC Switching Characteristics Worst-case commercial conditions: TJ = 85 C, VDD = 1.14 V, worst-case VDDI. Table 101 * HSTL Receiver Characteristics for DDRIO I/O Bank with Fixed Code (Input Buffers) TPY Pseudo differential True differential On-Die Termination (ODT) -1 -Std Unit None 1.605 1.888 ns 47.8 1.614 1.898 ns None 1.622 1.909 ns 47.8 1.628 1.916 ns Table 102 * HSTL Transmitter Characteristics for DDRIO I/O Bank (Output and Tristate Buffers) TDP -1 -Std TZL -1 -Std TZH -1 -Std THZ TLZ -1 -Std -1 -Std Unit HSTL Class I Single-ended 2.6 3.059 2.514 2.958 Differential 2.621 3.083 2.648 3.115 2.514 2.958 2.431 2.86 2.431 2.86 ns 2.647 3.113 2.925 3.442 2.923 3.44 ns HSTL Class II Single-ended 2.511 2.954 2.488 2.927 2.49 2.93 2.409 2.833 2.411 2.836 ns Differential 2.528 2.974 2.552 3.003 2.551 3.001 2.897 3.409 2.896 3.408 ns 2.3.6.2 Stub-Series Terminated Logic Stub-Series Terminated Logic (SSTL) for 2.5 V (SSTL2), 1.8 V (SSTL18), and 1.5 V (SSTL15) is supported in IGLOO2 and SmartFusion2 SoC FPGAs. SSTL2 is defined by JEDEC standard JESD8-9B and SSTL18 is defined by JEDEC standard JESD8-15. IGLOO2 SSTL I/O configurations are designed to meet double data rate standards DDR/2/3 for general purpose memory buses. Double data rate standards are designed to meet their JEDEC specifications as defined by JEDEC standard JESD79F for DDR, JEDEC standard JESD79-2F for DDR, JEDEC standard JESD79-3D for DDR3, and JEDEC standard JESD209A for LPDDR. Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 43 IGLOO2 FPGA and SmartFusion2 SoC FPGA 2.3.6.3 Stub-Series Terminated Logic 2.5 V (SSTL2) SSTL2 Class I and Class II are supported in IGLOO2 and SmartFusion2 SoC FPGAs and also comply with reduced and full drive of double data rate (DDR) standards. IGLOO2 and SmartFusion2 SoC FPGA I/Os supports both standards for single-ended signaling and differential signaling for SSTL2. This standard requires a differential amplifier input buffer and a push-pull output buffer. Minimum and Maximum DC/AC Input and Output Levels Specification Table 103 * DDR1/SSTL2 DC Recommended Operating Conditions Parameter Symbol Min Typ Max Unit Supply voltage VDDI 2.375 2.5 2.625 V Termination voltage VTT 1.164 1.250 1.339 V Input reference voltage VREF 1.164 1.250 1.339 V Table 104 * DDR1/SSTL2 DC Input Voltage Specification Parameter Symbol Min Max Unit DC input logic high VIH (DC) VREF + 0.15 2.625 V DC input logic low VIL (DC) -0.3 VREF - 0.15 V Input current high1 IIH (DC) Input current low1 IIL (DC) See Table 24, page 23. 1. Table 105 * DDR1/SSTL2 DC Output Voltage Specification Parameter Symbol Min Max Unit SSTL2 Class I (DDR Reduced Drive) DC output logic high VOH VTT + 0.608 V DC output logic low VOL Output minimum source DC current IOH at VOH 8.1 mA Output minimum sink current IOL at VOL -8.1 mA VTT - 0.608 V SSTL2 Class II (DDR Full Drive) - Applicable to MSIO and DDRIO I/O Bank Only DC output logic high VOH DC output logic low VOL Output minimum source DC current IOH at VOH 16.2 mA Output minimum sink current IOL at VOL -16.2 mA VTT + 0.81 V VTT - 0.81 V Table 106 * DDR1/SSTL2 DC Differential Voltage Specification Parameter Symbol Min Unit DC input differential voltage VID (DC) 0.3 V Table 107 * SSTL2 AC Differential Voltage Specifications Parameter Symbol Min AC input differential voltage VDIFF (AC) 0.7 AC differential cross point voltage Vx (AC) 0.5 x VDDI - 0.2 Max Unit V 0.5 x VDDI + 0.2 Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 V 44 IGLOO2 FPGA and SmartFusion2 SoC FPGA Table 108 * SSTL2 Minimum and Maximum AC Switching Speeds Parameter Symbol Max Unit Conditions Maximum data rate (for DDRIO I/O bank) DMAX 400 Mbps AC loading: per JEDEC specifications Maximum data rate (for MSIO I/O bank) DMAX 575 Mbps AC loading: 17pF load Maximum data rate (for MSIOD I/O bank) DMAX 700 Mbps AC loading: 3 pF / 50 load 510 Mbps AC loading: 17pF load Table 109 * SSTL2 AC Impedance Specifications Parameter Typ Supported output driver calibrated 20, 42 impedance (for DDRIO I/O bank) Unit Conditions Reference resistor = 150 Table 110 * DDR1/SSTL2 AC Test Parameter Specifications Parameter Symbol Typ Unit Measuring/trip point for data path VTRIP 1.25 V Resistance for enable path (TZH, TZL, THZ, TLZ) RENT 2K Capacitive loading for enable path (TZH, TZL, THZ, TLZ) CENT 5 pF Reference resistance for data test path for SSTL2 Class I (TDP) RTT_TEST 50 Reference resistance for data test path for SSTL2 Class II (TDP) RTT_TEST 25 Capacitive loading for data path (TDP) CLOAD 5 pF AC Switching Characteristics Worst commercial-case conditions: TJ = 85 C, VDD = 1.14 V, VDDI = 2.375 V Table 111 * SSTL2 Receiver Characteristics for DDRIO I/O Bank (Input Buffers) On-Die Termination (ODT) -1 TPY -Std Unit Pseudo differential None 1.549 1.821 ns True differential None 1.589 1.87 ns Table 112 * SSTL2 Receiver Characteristics for MSIO I/O Bank (Input Buffers) On-Die Termination (ODT) -1 TPY -Std Unit Pseudo differential None 2.798 3.293 ns True differential None 2.733 3.215 ns Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 45 IGLOO2 FPGA and SmartFusion2 SoC FPGA Table 113 * DDR1/SSTL2 Receiver Characteristics for MSIOD I/O Bank (Input Buffers) On-Die Termination (ODT) -1 TPY -Std Unit Pseudo differential None 2.476 2.913 ns True differential None 2.475 2.911 ns Table 114 * SSTL2 Class I Transmitter Characteristics for DDRIO I/O Bank (Output and Tristate Buffers) TDP TZL TZH THZ TLZ -1 -Std -1 -Std -1 -Std -1 -Std -1 -Std Unit Single-ended 2.26 2.66 1.99 2.341 1.985 2.335 2.135 2.512 2.13 2.505 ns Differential 2.26 2.658 2.202 2.591 2.201 2.589 2.393 2.815 2.392 2.814 ns Table 115 * DDR1/SSTL2 Class I Transmitter Characteristics for MSIO I/O Bank (Output and Tristate Buffers) TZL TDP TZH THZ TLZ -1 -Std -1 -Std -1 -Std -1 -Std -1 -Std Unit Single-ended 2.055 2.417 2.037 2.396 2.03 2.388 2.068 2.433 2.061 2.425 ns Differential 2.192 2.58 2.434 2.864 2.425 2.852 2.164 2.545 2.156 2.536 ns Table 116 * DDR1/SSTL2 Class I Transmitter Characteristics for MSIOD I/O Bank (Output and Tristate Buffers) TZL TDP TZH THZ TLZ -1 -Std -1 -Std -1 -Std -1 -Std -1 -Std Unit Single-ended 1.512 1.779 1.462 1.72 1.462 1.72 1.676 1.972 1.676 1.971 ns Differential 1.676 1.971 1.774 2.087 1.766 2.077 1.854 2.181 1.845 2.171 ns Table 117 * DDR1/SSTL2 Class II Transmitter Characteristics for DDRIO I/O Bank (Output and Tristate Buffers) TZL TDP TZH THZ TLZ -1 -Std -1 -Std -1 -Std -1 -Std -1 -Std Unit Single-ended 2.122 2.497 1.906 2.243 1.902 2.237 2.061 2.424 2.056 2.418 ns Differential 2.127 2.501 2.042 2.402 2.043 2.403 2.363 2.78 2.365 2.781 ns Table 118 * DDR1/SSTL2 Class II Transmitter Characteristics for MSIO I/O Bank (Output and Tristate Buffers) TZL TDP TZH THZ TLZ -1 -Std -1 -Std -1 -Std -1 -Std -1 -Std Unit Single-ended 2.29 2.693 1.988 2.338 1.978 2.326 1.989 2.34 1.979 2.328 ns Differential 2.418 2.846 2.304 2.711 2.297 2.702 2.131 2.506 2.124 2.499 ns 2.3.6.4 Stub-Series Terminated Logic 1.8 V (SSTL18) SSTL18 Class I and Class II are supported in IGLOO2 and SmartFusion2 SoC FPGAs, and also comply with the reduced and full drive double date rate (DDR2) standard. IGLOO2 and SmartFusion2 SoC FPGA I/Os support both standards for single-ended signaling and differential signaling for SSTL18. This standard requires a differential amplifier input buffer and a push-pull output buffer. Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 46 IGLOO2 FPGA and SmartFusion2 SoC FPGA Minimum and Maximum DC/AC Input and Output Levels Specification Table 119 * SSTL18 DC Recommended DC Operating Conditions Parameter Symbol Min Typ Max Unit Supply voltage VDDI 1.71 1.8 1.89 V Termination voltage VTT 0.838 0.900 0.964 V Input reference voltage VREF 0.838 0.900 0.964 V Table 120 * SSTL18 DC Input Voltage Specification Parameter Symbol Min Max Unit DC input logic high VIH (DC) VREF + 0.125 1.89 V DC input logic low VIL (DC) -0.3 VREF - 0.125 V Input current high1 IIH (DC) Input current low1 IIL (DC) See Table 24, page 23. 1. Table 121 * SSTL18 DC Output Voltage Specification Parameter Symbol Min Max Unit SSTL18 Class I (DDR2 Reduced Drive) DC output logic high VOH DC output logic low VOL Output minimum source DC current (DDRIO I/O bank only) IOH at VOH 6.5 mA Output minimum sink current (DDRIO I/O bank only) IOL at VOL -6.5 mA SSTL18 Class II (DDR2 Full VTT + 0.603 V VTT- 0.603 V Drive)1 DC output logic high VOH DC output logic low VOL Output minimum source DC current (DDRIO I/O bank only) IOH at VOH 13.4 mA Output minimum sink current (DDRIO I/O bank only) IOL at VOL -13.4 mA 1. VTT + 0.603 V VTT- 0.603 V To meet JEDEC Electrical Compliance, use DDR2 Full Drive Transmitter. Table 122 * SSTL18 DC Differential Voltage Specification Parameter Symbol Min Unit DC input differential voltage VID (DC) 0.3 V Table 123 * SSTL18 AC Differential Voltage Specifications (Applicable to DDRIO Bank Only) Parameter Symbol Min AC input differential voltage VDIFF (AC) 0.5 AC differential cross point voltage Vx (AC) 0.5 x VDDI - 0.175 Max Unit V 0.5 x VDDI + 0.175 V Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 47 IGLOO2 FPGA and SmartFusion2 SoC FPGA Table 124 * SSTL18 Minimum and Maximum AC Switching Speed (Applicable to DDRIO Bank Only) Parameter Symbol Max Unit Conditions Maximum data rate (for DDRIO I/O bank) DMAX 667 Mbps AC loading: per JEDEC specification Table 125 * SSTL18 AC Impedance Specifications (Applicable to DDRIO Bank Only) Parameter Symbol Typ Unit Conditions Supported output driver calibrated impedance (for DDRIO I/O bank) RREF 20, 42 Reference resistor = 150 Effective impedance value (ODT) RTT 50, 75, 150 Reference resistor = 150 Table 126 * SSTL18 AC Test Parameter Specifications (Applicable to DDRIO Bank Only) Parameter Symbol Typ Unit Measuring/trip point for data path VTRIP 0.9 V Resistance for enable path (TZH, TZL, THZ, TLZ) RENT 2K Capacitive loading for enable path (TZH, TZL, THZ, TLZ) CENT 5 pF Reference resistance for data test path for SSTL18 Class I (TDP) RTT_TEST 50 Reference resistance for data test path for SSTL18 Class II (TDP) RTT_TEST 25 Capacitive loading for data path (TDP) 5 pF CLOAD AC Switching Characteristics Worst commercial-case conditions: TJ = 85 C, VDD = 1.14 V, VDDI = 1.71 V Table 127 * DDR2/SSTL18 Receiver Characteristics for DDRIO I/O Bank with Fixed Code TPY On-Die Termination (ODT) -1 -Std Unit Pseudo differential None 1.567 1.844 ns True differential 1.588 1.869 ns None Table 128 * DDR2/SSTL18 Transmitter Characteristics (Output and Tristate Buffers) TZL TDP -1 -Std -1 -Std TZH -1 -Std THZ -1 TLZ -Std -1 -Std Unit SSTL18 Class I (for DDRIO I/O Bank) Single-ended 2.383 2.804 2.23 2.623 2.229 2.622 2.202 2.591 2.201 2.59 ns Differential 2.413 2.84 2.797 3.29 2.797 3.29 2.282 2.685 2.282 2.685 ns SSTL18 Class II (for DDRIO I/O Bank) Single-ended 2.281 2.683 2.196 2.584 2.195 2.583 2.171 2.555 2.17 2.554 ns Differential 2.315 2.724 2.698 3.173 2.698 3.173 2.242 2.639 2.242 2.639 ns Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 48 IGLOO2 FPGA and SmartFusion2 SoC FPGA 2.3.6.5 Stub-Series Terminated Logic 1.5 V (SSTL15) SSTL15 Class I and Class II are supported in IGLOO2 FPGAs and SmartFusion2 SoC FPGAs, and also comply with the reduced and full drive double data rate (DDR3) standard. IGLOO2 FPGA and SmartFusion2 SoC FPGA I/Os supports both standards for single-ended signaling and differential signaling for SSTL18. This standard requires a differential amplifier input buffer and a push-pull output buffer. Minimum and Maximum DC/AC Input and Output Levels Specification The following table lists the SSTL15 DC voltage specifications for DDRIO bank. Table 129 * SSTL15 DC Recommended DC Operating Conditions (for DDRIO I/O Bank Only) Parameter Symbol Min Typ Max Unit Supply voltage VDDI 1.425 1.5 1.575 V Termination voltage VTT 0.698 0.750 0.803 V Input reference voltage VREF 0.698 0.750 0.803 V Table 130 * SSTL15 DC Input Voltage Specification (for DDRIO I/O Bank Only) Parameter Symbol Min Max Unit DC input logic high VIH(DC) VREF + 0.1 1.575 V DC input logic low VIL(DC) -0.3 VREF - 0.1 V Input current high1 IIH (DC) Input current low1 IIL (DC) 1. See Table 24, page 23. Table 131 * SSTL15 DC Output Voltage Specification (for DDRIO I/O Bank Only) Parameter Symbol Min Max Unit DDR3/SSTL15 Class I (DDR3 Reduced Drive) DC output logic high VOH DC output logic low VOL Output minimum source DC current IOH at VOH 6.5 mA Output minimum sink current IOL at VOL -6.5 mA 0.8 x VDDI V 0.2 x VDDI V DDR3/SSTL15 Class II (DDR3 Full Drive) DC output logic high VOH DC output logic low VOL Output minimum source DC current IOH at VOH 7.6 mA Output minimum sink current IOL at VOL -7.6 mA 0.8 x VDDI V 0.2 x VDDI V Table 132 * SSTL15 DC Differential Voltage Specification (for DDRIO I/O Bank Only) Parameter Symbol Min Unit DC input differential voltage VID 0.2 V Note: To meet JEDEC electrical compliance, use DDR3 full drive transmitter. Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 49 IGLOO2 FPGA and SmartFusion2 SoC FPGA Table 133 * SSTL15 AC SSTL15 Minimum and Maximum AC Switching Speed (for DDRIO I/O Bank Only) Parameter Symbol Min Max AC input differential voltage VDIFF (AC) 0.3 AC differential cross point voltage Vx (AC) 0.5 x VDDI - 0.150 Unit V 0.5 x VDDI + 0.150 V Table 134 * SSTL15 Minimum and Maximum AC Switching Speed (for DDRIO I/O Bank Only) Parameter Symbol Max Unit Conditions Maximum data rate DMAX 667 Mbps AC loading: per JEDEC specifications Table 135 * SSTL15 AC Calibrated Impedance Option (for DDRIO I/O Bank Only) Parameter Symbol Typ Unit Conditions Supported output driver calibrated impedance RREF 34, 40 Reference resistor = 240 Effective impedance value (ODT) RTT 20, 30, 40, 60, 120 Reference resistor = 240 Table 136 * SSTL15 AC Test Parameter Specifications (for DDRIO I/O Bank Only) Parameter Symbol Typ Unit Measuring/trip point for data path VTRIP 0.75 V Resistance for enable path (TZH, TZL, THZ, TLZ) RENT 2K Capacitive loading for enable path (TZH, TZL, THZ, TLZ) CENT 5 pF Reference resistance for data test path for SSTL15 Class I (TDP) RTT_TEST 50 Reference resistance for data test path for SSTL15 Class II (TDP) RTT_TEST 25 Capacitive loading for data path (TDP) CLOAD 5 pF AC Switching Characteristics Worst commercial-case conditions: TJ = 85 C, VDD = 1.14 V, VDDI = 1.425 V Table 137 * DDR3/SSTL15 Receiver Characteristics for DDRIO I/O Bank - with Calibration Only TPY Pseudo differential On-Die Termination (ODT) -1 -Std Unit None 1.605 1.888 ns 20 1.616 1.901 ns 30 1.613 1.897 ns 40 1.611 1.895 ns 60 1.609 1.893 ns 120 1.607 1.89 ns Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 50 IGLOO2 FPGA and SmartFusion2 SoC FPGA Table 137 * DDR3/SSTL15 Receiver Characteristics for DDRIO I/O Bank - with Calibration Only TPY True differential On-Die Termination (ODT) -1 -Std Unit None 1.623 1.91 ns 20 1.637 1.926 ns 30 1.63 1.918 ns 40 1.626 1.914 ns 60 1.622 1.91 ns 120 1.619 1.905 ns Table 138 * DDR3/SSTL15 Transmitter Characteristics (Output and Tristate Buffers) TDP -1 TZL -Std -1 TZH -Std -1 THZ -Std -1 TLZ -Std -1 -Std Unit DDR3 Reduced Drive/SSTL15 Class I (for DDRIO I/O Bank) Single-ended 2.533 2.98 2.522 2.967 2.523 2.968 2.427 2.855 2.428 2.856 ns Differential 2.555 3.005 3.073 3.615 3.073 3.615 2.416 2.843 2.416 2.843 ns DDR3 Full Drive/SSTL15 Class II (for DDRIO I/O Bank) Single-ended 2.53 2.977 2.514 2.958 2.516 2.96 2.422 2.849 2.425 2.852 ns Differential 2.552 3.002 2.591 3.048 2.59 3.047 2.882 3.391 2.881 3.39 ns 2.3.6.6 Low Power Double Data Rate (LPDDR) LPDDR reduced and full drive low power double data rate standards are supported in IGLOO2 FPGA and SmartFusion2 SoC FPGA I/Os. This standard requires a differential amplifier input buffer and a push-pull output buffer. Minimum and Maximum DC/AC Input and Output Levels Specification Table 139 * LPDDR DC Recommended DC Operating Conditions Parameter Symbol Min Typ Max Supply voltage VDDI 1.71 1.8 1.89 Termination voltage VTT 0.838 0.900 0.964 Input reference voltage VREF 0.838 0.900 0.964 Table 140 * LPDDR DC Input Voltage Specification Parameter Symbol Min Max DC input logic high VIH (DC) 0.7 x VDDI 1.89 DC input logic low VIL (DC) -0.3 0.3 x VDDI Input current high1 IIH (DC) Input current 1. low1 IIL (DC) See Table 24, page 23. Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 51 IGLOO2 FPGA and SmartFusion2 SoC FPGA Table 141 * LPDDR DC Output Voltage Specification Reduced Drive Parameter Symbol Min Max DC output logic high VOH 0.9 x VDDI DC output logic low VOL Output minimum source DC current IOH at VOH 0.1 Output minimum sink current IOL at VOL -0.1 0.1 x VDDI Table 142 * LPDDR DC Output Voltage Specification Full Drive1 Parameter Symbol Min DC output logic high VOH 0.9 x VDDI DC output logic low VOL Output minimum source DC current IOH at VOH 0.1 Output minimum sink current IOL at VOL -0.1 1. Max 0.1 x VDDI To meet JEDEC Electrical Compliance, use LPDDR Full Drive Transmitter. Table 143 * LPDDR DC Differential Voltage Specification Parameter Symbol Min DC input differential voltage VID (DC) 0.4 x VDDI Table 144 * LPDDR AC Differential Voltage Specifications (for DDRIO I/O Bank Only) Parameter Symbol Min Max AC input differential voltage VDIFF 0.6 x VDDI AC differential cross point voltage Vx 0.4 x VDDI Unit V 0.6 x VDDI V Table 145 * LPDDR AC Specifications (for DDRIO I/O Bank Only) Parameter Symbol Max Unit Conditions Maximum data rate DMAX 400 Mbps AC loading: per JEDEC specifications Table 146 * LPDDR AC Calibrated Impedance Option (for DDRIO I/O Bank Only) Parameter Symbol Typ Unit Conditions Supported output driver calibrated impedance RREF 20, 42 Reference resistor = 150 Effective impedance value (ODT) RTT 50, 70, 150 Reference resistor = 150 Table 147 * LPDDR AC Test Parameter Specifications (for DDRIO I/O Bank Only) Parameter Symbol Typ Unit Measuring/trip point for data path VTRIP 0.9 V Resistance for enable path (TZH, TZL, THZ, TLZ) RENT 2K Capacitive loading for enable path (TZH, TZL, THZ, TLZ) CENT 5 pF Reference resistance for data test path for LPDDR (TDP) RTT_TEST 50 Capacitive loading for data path (TDP) CLOAD 5 Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 52 IGLOO2 FPGA and SmartFusion2 SoC FPGA AC Switching Characteristics Worst-case commercial conditions: TJ = 85 C, VDD = 1.14 V, worst-case VDDI. Table 148 * LPDDR Receiver Characteristics for DDRIO I/O Bank with Fixed Codes TPY On-Die Termination (ODT) -1 -Std Unit Pseudo differential None 1.568 1.845 ns True differential 1.588 1.869 ns None Table 149 * LPDDR Reduced Drive for DDRIO I/O Bank (Output and Tristate Buffers) TENZL TDP -1 TENZH -Std -1 -Std -1 -Std Single-ended 2.383 2.804 2.23 2.623 2.229 Differential 2.819 2.764 3.252 2.764 2.396 TENHZ -1 TENLZ -Std -1 -Std Unit 2.622 2.202 2.591 2.201 2.59 ns 3.252 2.255 2.653 2.255 2.653 ns Table 150 * LPDDR Full Drive for DDRIO I/O Bank (Output and Tristate Buffers) TENZL TDP -1 TENZH -Std -1 -Std -1 -Std Single-ended 2.281 2.683 2.196 2.584 2.195 Differential 2.703 2.288 2.692 2.288 2.298 TENHZ -1 TENLZ -Std -1 -Std Unit 2.583 2.171 2.555 2.17 2.554 ns 2.692 2.593 3.051 2.593 3.051 ns Minimum and Maximum DC/AC Input and Output Levels Specification using LPDDR-LVCMOS 1.8 V Mode Table 151 * LPDDR-LVCMOS 1.8 V Mode Recommended DC Operating Conditions Parameter Symbol Min Typ Max Unit Supply voltage VDDI 1.710 1.8 1.89 V Table 152 * LPDDR-LVCMOS 1.8 V Mode DC Input Voltage Specification Parameter Symbol DC input logic high (for MSIOD and DDRIO VIH (DC) I/O banks) Min Max Unit 0.65 x VDDI 1.89 V DC input logic high (for MSIO I/O bank) VIH (DC) 0.65 x VDDI 3.45 V DC input logic low VIL (DC) -0.3 0.35 x VDDI V Input current high1 IIH (DC) Input current 1. low1 IIL (DC) See Table 24, page 23. Table 153 * LPDDR-LVCMOS 1.8 V Mode DC Output Voltage Specification Parameter Symbol Min DC output logic high VOH VDDI - 0.45 DC output logic low VOL Max Unit V 0.45 Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 V 53 IGLOO2 FPGA and SmartFusion2 SoC FPGA Table 154 * LPDDR-LVCMOS 1.8 V Minimum and Maximum AC Switching Speeds Parameter Symbol Max Unit Conditions Maximum data rate (for DDRIO I/O bank) DMAX 400 Mbps AC loading: 17pf load, 8 ma drive and above/all slew Table 155 * LPDDR-LVCMOS 1.8 V Calibrated Impedance Option Parameter Symbol Typ Unit Supported output driver calibrated impedance (for DDRIO I/O bank) RODT_CAL 75, 60, 50, 33, 25, 20 Table 156 * LPDDR-LVCMOS 1.8 V AC Test Parameter Specifications Parameter Symbol Typ Unit Measuring/trip point for data path VTRIP 0.9 V Resistance for enable path (TZH, TZL, THZ, TLZ) RENT 2K Capacitive loading for enable path (TZH, TZL, THZ, TLZ) CENT 5 pF Capacitive loading for data path (TDP) CLOAD 5 pF Table 157 * LPDDR-LVCMOS 1.8 V Mode Transmitter Drive Strength Specification for DDRIO Bank Output Drive Selection VOH (V) Min VOL (V) Max IOH (at VOH) mA IOL (at VOL) mA 2 mA VDDI - 0.45 0.45 2 2 4 mA VDDI - 0.45 0.45 4 4 6 mA VDDI - 0.45 0.45 6 6 8 mA VDDI - 0.45 0.45 8 8 10 mA VDDI - 0.45 0.45 10 10 12 mA VDDI - 0.45 0.45 12 12 VDDI - 0.45 0.45 16 16 16 mA1 1. 16 mA Drive Strengths, All Slews, meet LPDDR JEDEC electrical compliance. Table 158 * LPDDR-LVCMOS 1.8V AC Switching Characteristics for Receiver (for DDRIO I/O Bank with Fixed Code - Input Buffers) ODT (On Die Termination) -1 -Std -1 -Std Unit None 1.968 2.315 2.099 2.47 ns Table 159 * LPDDR-LVCMOS 1.8 V AC Switching Characteristics for Transmitter for DDRIO I/O Bank (Output and Tristate Buffers) TZL TDP Output Drive Slew Selection Control -1 -Std 2 mA slow 4.234 medium -1 THZ1 TZH -Std -1 -Std 4.981 3.646 4.29 4.245 4.995 4.908 5.774 4.434 5.216 ns 3.824 4.498 3.282 3.861 3.834 4.511 4.625 5.441 4.116 4.843 ns medium_fast 3.627 4.267 3.111 3.66 4.279 4.481 5.272 3.984 4.687 ns 3.637 -1 -Std TLZ1 -1 Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 -Std Unit 54 IGLOO2 FPGA and SmartFusion2 SoC FPGA Table 159 * LPDDR-LVCMOS 1.8 V AC Switching Characteristics for Transmitter for DDRIO I/O Bank (Output and Tristate Buffers) (continued) 4 mA 6 mA 8 mA 10 mA 12 mA 16 mA 1. fast 3.605 4.241 3.097 3.644 3.615 4.253 4.472 5.262 3.973 4.674 ns slow 3.923 4.615 3.314 3.9 4.61 5.403 6.356 4.894 5.757 ns medium 3.518 4.138 2.961 3.484 3.515 4.135 5.121 6.025 4.561 5.366 ns medium_fast 3.321 3.907 2.783 3.275 3.317 3.903 4.966 5.843 4.426 5.206 ns fast 3.301 3.883 2.77 3.259 3.296 3.878 4.957 5.831 4.417 5.196 ns slow 3.71 4.364 3.104 3.652 3.702 4.355 5.62 6.612 5.08 5.977 ns medium 3.333 3.921 2.779 3.27 3.913 5.346 6.289 4.777 5.62 medium_fast 3.155 3.712 2.62 3.083 3.146 3.702 5.21 6.13 4.657 5.479 ns fast 3.134 3.688 2.608 3.068 3.125 3.677 5.202 6.12 4.648 5.468 ns slow 3.619 4.258 3.007 3.538 3.607 4.244 5.815 6.841 5.249 6.175 ns medium 3.246 3.819 2.686 3.16 3.236 3.807 5.542 6.52 5.807 ns medium_fast 3.066 3.607 2.525 2.971 3.054 3.593 5.405 6.359 4.811 5.66 fast 3.046 3.584 2.513 2.957 3.034 3.57 5.401 6.353 4.803 5.651 ns slow 3.498 4.115 2.878 3.386 3.481 4.096 6.046 7.113 5.444 6.404 ns medium 3.138 3.692 2.569 3.023 3.126 3.678 5.782 6.803 5.129 6.034 ns medium_fast 2.966 3.489 2.414 2.841 2.951 3.472 5.666 6.665 5.013 5.897 ns fast 2.945 3.464 2.401 2.826 2.93 3.448 5.659 6.658 5.003 5.886 ns slow 3.417 4.02 2.807 3.303 3.401 4.002 6.083 7.156 5.464 6.428 ns medium 3.076 3.618 2.519 2.964 3.063 3.604 5.828 6.856 5.176 6.089 ns medium_fast 2.913 3.427 2.376 2.795 2.898 3.41 5.725 6.736 5.072 5.966 ns fast 2.894 3.405 2.362 2.78 2.879 3.388 5.715 6.724 5.064 5.957 ns slow 3.366 3.96 3.237 3.348 3.939 6.226 7.324 5.576 6.56 medium 3.03 3.565 2.47 2.906 3.017 3.55 7.036 5.282 6.214 ns medium_fast 2.87 3.377 2.328 2.739 2.854 3.358 5.895 6.935 5.18 6.094 ns fast 3.357 2.314 2.723 2.837 3.338 5.889 6.929 5.177 6.09 2.853 2.751 3.918 3.325 5.981 4.936 ns ns ns ns Delay increases with drive strength are inherent to built-in slew control circuitry for simultaneous switching output (SSO) management). 2.3.7 Differential I/O Standards Configuration of the I/O modules as a differential pair is handled by Microsemi SoC Products Group Libero software when the user instantiates a differential I/O macro in the design. Differential I/Os can also be used in conjunction with the embedded Input register (InReg), Output register (OutReg), Enable register (EnReg), and Double Data Rate registers (DDR). 2.3.7.1 LVDS Low-Voltage Differential Signaling (ANSI/TIA/EIA-644) is a high-speed, differential I/O standard. Minimum and Maximum Input and Output Levels Table 160 * LVDS Recommended DC Operating Conditions Parameter Symbol Min Typ Max Unit Conditions Supply voltage VDDI 2.375 2.5 2.625 V 2.5 V range Supply voltage VDDI 3.15 3.3 3.45 V 3.3 V range Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 55 IGLOO2 FPGA and SmartFusion2 SoC FPGA Table 161 * LVDS DC Input Voltage Specification Parameter Symbol Min Max Unit Conditions DC Input voltage VI 0 2.925 V 2.5 V range DC input voltage VI 0 3.45 V 3.3 V range Input current high1 IIH (DC) Input current low1 IIL (DC) 1. See Table 24, page 23. Table 162 * LVDS DC Output Voltage Specification Parameter Symbol Min Typ Max Unit DC output logic high VOH 1.25 1.425 1.6 V DC output logic low VOL 0.9 1.075 1.25 V Table 163 * LVDS DC Differential Voltage Specification1 Parameter Symbol Min Typ Max Unit Differential output voltage swing VOD 250 350 450 mV Output common mode voltage VOCM 1.125 1.25 1.375 V Input common mode voltage VICM 0.05 1.25 2.35 V Input differential voltage VID 100 350 600 mV 1. when VID is < 300 mV, the input signal is delayed by up to an additional 450 ps for LVDS25 and 280 ps for LVDS33. This delay is not accounted in the timing model. Clock insertion delays, propagation delays, and I/O to FF delays are marginally affected. Adding a parallel termination resistor of 200 ohms +/- 5% across the receiver pins can mitigate this additional delay when VID is < 300 mV. Table 164 * LVDS Minimum and Maximum AC Switching Speed Parameter Symbol Max Unit Conditions Maximum data rate (for MSIO I/O bank) DMAX 535 Mbps AC loading: 12 pF / 100 differential load Maximum data rate (for MSIOD I/O bank) no DMAX pre-emphasis 620 Mbps AC loading: 10 pF / 100 differential load 700 Mbps AC loading: 2 pF / 100 differential load Table 165 * LVDS AC Impedance Specifications Parameter Symbol Typ Termination resistance RT 100 Max Unit Table 166 * LVDS AC Test Parameter Specifications Parameter Symbol Typ Unit Measuring/trip point for data path VTRIP Cross point V Resistance for enable path (TZH, TZL, THZ, TLZ) RENT 2K Capacitive loading for enable path (TZH, TZL, THZ, TLZ) CENT 5 pF Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 56 IGLOO2 FPGA and SmartFusion2 SoC FPGA LVDS25 AC Switching Characteristics Worst commercial-case conditions: TJ = 85 C, VDD = 1.14 V, VDDI = 2.375 V Table 167 * LVDS25 Receiver Characteristics for MSIO I/O Bank (Input Buffers) TPY On-Die Termination (ODT) -1 -Std Unit None 2.774 3.263 ns 100 2.775 3.264 ns Table 168 * LVDS25 Receiver Characteristics for MSIOD I/O Bank (Input Buffers) TPY On-Die Termination (ODT) -1 -Std Unit None 2.554 3.004 ns 100 2.549 2.999 ns Table 169 * LVDS25 Transmitter Characteristics for MSIO I/O Bank (Output and Tristate Buffers) TZL TDP -1 -Std 2.136 -1 2.513 TZH -Std 2.416 2.842 -1 THZ -Std 2.402 -1 2.825 TLZ -Std 2.423 -1 2.85 -Std 2.409 Unit 2.833 ns Table 170 * LVDS25 Transmitter Characteristics for MSIOD I/O Bank (Output and Tristate Buffers) TZL TDP -1 -Std -1 TZH -Std -1 THZ -Std -1 TLZ -Std -1 -Std Unit No pre-emphasis 1.61 1.893 1.749 2.058 1.735 2.041 1.897 2.231 1.866 2.195 ns Min pre-emphasis 1.527 1.796 1.757 2.067 1.744 2.052 1.905 2.241 1.876 2.207 ns Med pre-emphasis 1.496 1.76 2.077 1.751 2.06 2.252 1.884 2.216 ns 1.765 1.914 LVDS33 AC Switching Characteristics Table 171 * LVDS33 Receiver Characteristics for MSIO I/O Bank (Input Buffers) TPY On Die Termination (ODT) -1 -Std Unit None 2.572 3.025 ns 100 2.569 3.023 ns Table 172 * LVDS33 Transmitter Characteristics for MSIO I/O Bank (Output and Tristate Buffers) TZL TDP -1 -Std -1 1.942 2.284 1.98 TZH THZ -Std -1 -Std -1 2.33 1.97 2.318 1.953 -Std TLZ -1 2.298 1.96 -Std Unit 2.307 ns Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 57 IGLOO2 FPGA and SmartFusion2 SoC FPGA 2.3.7.2 B-LVDS Bus LVDS (B-LVDS) specifications extend the existing LVDS standard to high-performance multipoint bus applications. Multidrop and multipoint bus configurations may contain any combination of drivers, receivers, and transceivers. Minimum and Maximum DC/AC Input and Output Levels Specification Table 173 * B-LVDS Recommended DC Operating Conditions Parameter Symbol Min Typ Max Unit Supply voltage VDDI 2.375 2.5 2.625 V Table 174 * B-LVDS DC Input Voltage Specification Parameter DC input voltage Symbol Min Max Unit VI 0 2.925 V Input current high1 IIH (DC) Input current low1 IIL (DC) 1. See Table 24, page 23. Table 175 * B-LVDS DC Output Voltage Specification (for MSIO I/O Bank Only) Parameter Symbol Min Typ Max Unit DC output logic high VOH 1.25 1.425 1.6 V DC output logic low VOL 0.9 1.075 1.25 V Table 176 * B-LVDS DC Differential Voltage Specification Parameter Symbol Min Max Unit Differential output voltage swing (for MSIO I/O bank only) VOD 65 460 mV Output common mode voltage (for MSIO I/O bank only) VOCM 1.1 1.5 V Input common mode voltage VICM 0.05 2.4 V Input differential voltage VID 0.1 VDDI V Table 177 * B-LVDS Minimum and Maximum AC Switching Speed Parameter Symbol Max Unit Conditions Maximum data rate (for MSIO I/O bank) DMAX 500 Mbps AC loading: 2 pF / 100 differential load Table 178 * B-LVDS AC Impedance Specifications Parameter Symbol Typ Unit Termination resistance RT 27 Table 179 * B-LVDS AC Test Parameter Specifications Parameter Symbol Typ Unit Measuring/trip point for data path VTRIP Cross point V Resistance for enable path (TZH, TZL, THZ, TLZ) RENT 2K Capacitive loading for enable path (TZH, TZL, THZ, TLZ) CENT 5 pF Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 58 IGLOO2 FPGA and SmartFusion2 SoC FPGA AC Switching Characteristics Worst commercial-case conditions: TJ = 85 C, VDD = 1.14 V, VDDI = 2.375 V. Table 180 * B-LVDS AC Switching Characteristics for Receiver for MSIO I/O Bank (Input Buffers) TPY On-Die Termination (ODT) -1 -Std Unit None 2.738 3.221 ns 100 2.735 3.218 ns Table 181 * B-LVDS AC Switching Characteristics for Receiver for MSIOD I/O Bank (Input Buffers) TPY On-Die Termination (ODT) -1 -Std Unit None 2.495 2.934 ns 100 2.495 2.935 ns Table 182 * B-LVDS AC Switching Characteristics for Transmitter (for MSIO I/O Bank - Output and Tristate Buffers) TZL TDP TZH THZ TLZ -1 -Std -1 -Std -1 -Std -1 -Std -1 -Std Unit 2.258 2.656 2.343 2.756 2.329 2.74 2.12 2.494 2.123 2.497 ns 2.3.7.3 M-LVDS M-LVDS specifications extend the existing LVDS standard to high-performance multipoint bus applications. Multidrop and multipoint bus configurations may contain any combination of drivers, receivers, and transceivers. Minimum and Maximum Input and Output Levels Table 183 * M-LVDS Recommended DC Operating Conditions Parameter Supply voltage 1. 1 Symbol Min Typ Max Unit VDDI 2.375 2.5 2.625 V Only M-LVDS TYPE I is supported. Table 184 * M-LVDS DC Input Voltage Specification Parameter DC input voltage Symbol Min Max Unit VI 0 2.925 V Input current high1 IIH (DC) Input current low2 IIL (DC) 1. See Table 24, page 23. Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 59 IGLOO2 FPGA and SmartFusion2 SoC FPGA Table 185 * M-LVDS DC Voltage Specification Output Voltage Specification (for MSIO I/O Bank Only) Parameter Symbol Min Typ Max Unit DC output logic high VOH 1.25 1.425 1.6 V DC output logic low VOL 0.9 1.075 1.25 V Table 186 * M-LVDS Differential Voltage Specification Parameter Symbol Min Max Unit Differential output voltage swing (for MSIO I/O bank only) VOD 300 650 mV Output common mode voltage (for MSIO I/O bank only) VOCM 0.3 2.1 V Input common mode voltage VICM 0.3 1.2 V Input differential voltage VID 50 2400 mV Table 187 * M-LVDS Minimum and Maximum AC Switching Speed for MSIO I/O Bank Parameter Symbol Max Unit Conditions Maximum data rate DMAX 500 Mbps AC loading: 2 pF / 100 differential load Table 188 * M-LVDS AC Impedance Specifications Parameter Symbol Typ Unit Termination resistance RT 50 Table 189 * M-LVDS AC Test Parameter Specifications Parameter Symbol Typ Unit Measuring/trip point for data path VTRIP Cross point V Resistance for enable path (TZH, TZL, THZ, TLZ) RENT 2K Capacitive loading for enable path (TZH, TZL, THZ, TLZ) CENT 5 pF AC Switching Characteristics Worst commercial-case conditions: TJ = 85 C, VDD = 1.14 V, VDDI = 2.375 V Table 190 * M-LVDS AC Switching Characteristics for Receiver (for MSIO I/O Bank - Input Buffers) TPY On-Die Termination (ODT) -1 -Std Unit None 2.738 3.221 ns 100 2.735 3.218 ns Table 191 * M-LVDS AC Switching Characteristics for Receiver (for MSIOD I/O Bank - Input Buffers) TPY On-Die Termination (ODT) -1 -Std Unit None 2.495 2.934 ns 100 2.495 2.935 ns Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 60 IGLOO2 FPGA and SmartFusion2 SoC FPGA Table 192 * M-LVDS AC Switching Characteristics for Transmitter (for MSIO I/O Bank - Output and Tristate Buffers) TZL TDP TZH THZ TLZ -1 -Std -1 -Std -1 -Std -1 -Std -1 -Std Unit 2.258 2.656 2.348 2.762 2.334 2.746 2.123 2.497 2.125 2.5 ns 2.3.7.4 Mini-LVDS Mini-LVDS is an unidirectional interface from the timing controller to the column drivers and is designed to the Texas Instruments Standard SLDA007A. Mini-LVDS Minimum and Maximum Input and Output Levels Table 193 * Mini-LVDS Recommended DC Operating Conditions Parameter Symbol Min Typ Max Unit Supply voltage VDDI 2.375 2.5 2.625 V Table 194 * Mini-LVDS DC Input Voltage Specification Parameter Symbol Min Max Unit DC Input voltage VI 0 2.925 V Table 195 * Mini-LVDS DC Output Voltage Specification Parameter Symbol Min Typ Max Unit DC output logic high VOH 1.25 1.425 1.6 V DC output logic low VOL 0.9 1.075 1.25 V Table 196 * Mini-LVDS DC Differential Voltage Specification Parameter Symbol Min Max Unit Differential output voltage swing VOD 300 600 mV Output common mode voltage VOCM 1 1.4 V Input common mode voltage VICM 0.3 1.2 V Input differential voltage VID 100 600 mV Table 197 * Mini-LVDS Minimum and Maximum AC Switching Speed Parameter Symbol Max Unit Conditions Maximum data rate (for MSIO I/O bank) DMAX 520 Mbps AC loading: 2 pF / 100 differential load Maximum data rate (for MSIOD I/O bank) DMAX 700 Mbps AC loading: 2 pF / 100 differential load Table 198 * Mini-LVDS AC Impedance Specifications Parameter Symbol Typ Unit Termination resistance RT 100 Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 61 IGLOO2 FPGA and SmartFusion2 SoC FPGA Table 199 * Mini-LVDS AC Test Parameter Specifications Parameter Symbol Typ Unit Measuring/trip point for data path VTRIP Cross point V Resistance for enable path (TZH, TZL, THZ, TLZ) RENT 2K Capacitive loading for enable path (TZH, TZL, THZ, TLZ) CENT 5 pF AC Switching Characteristics Worst commercial-case conditions: TJ = 85 C, VDD = 1.14 V, VDDI = 2.375 V. Table 200 * Mini-LVDS AC Switching Characteristics for Receiver (for MSIO I/O Bank - Input Buffers) TPY On-Die Termination (ODT) -1 -Std Unit None 2.855 3.359 ns 100 2.85 3.353 ns None 2.602 3.061 ns 100 2.597 3.055 ns Table 201 * Mini-LVDS AC Switching Characteristics for Transmitter for MSIO I/O Bank (Output and Tristate Buffers) TDP TZL TZH THZ TLZ Unit -1 -Std -1 -Std -1 -Std -1 -Std -1 -Std 2.097 2.467 2.308 2.715 2.296 2.701 1.964 2.31 1.949 2.293 ns Table 202 * Mini-LVDS AC Switching Characteristics for Transmitter (for MSIOD I/O Bank - Output and Tristate Buffers) TZL TDP -1 -Std TZH -1 -Std THZ -1 -Std TLZ -1 Unit -1 -Std No pre-emphasis 1.614 1.899 1.562 1.837 1.553 1.826 1.593 1.874 1.578 1.856 ns Min pre-emphasis 1.604 1.887 1.745 2.053 1.731 2.036 1.892 2.225 1.861 2.189 ns Med pre-emphasis 1.521 1.79 1.753 2.062 1.737 2.043 1.9 2.235 1.868 2.197 ns Max pre-emphasis 1.492 1.754 1.762 2.073 1.745 2.052 1.91 2.247 1.876 2.206 ns Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 -Std 62 IGLOO2 FPGA and SmartFusion2 SoC FPGA 2.3.7.5 RSDS Reduced Swing Differential Signaling (RSDS) is similar to an LVDS high-speed interface using differential signaling. RSDS has a similar implementation to LVDS devices and is only intended for point-to-point applications. Minimum and Maximum Input and Output Levels Table 203 * RSDS Recommended DC Operating Conditions Parameter Symbol Min Typ Max Unit Supply voltage VDDI 2.375 2.5 2.625 V Table 204 * RSDS DC Input Voltage Specification Parameter Symbol Min Max Unit DC input voltage VI 0 2.925 V Table 205 * RSDS DC Output Voltage Specification Parameter Symbol Min Typ Max Unit DC output logic high VOH 1.25 1.425 1.6 V DC output logic low VOL 0.9 1.075 1.25 V Table 206 * RSDS Differential Voltage Specification Parameter Symbol Min Max Unit Differential output voltage swing VOD 100 600 mV Output common mode voltage VOCM 0.5 1.5 V Input common mode voltage VICM 0.3 1.5 V Input differential voltage VID 100 600 mV Table 207 * RSDS Minimum and Maximum AC Switching Speed Parameter Symbol Max Unit Conditions Maximum data rate (for MSIO I/O bank) DMAX 520 Mbps AC loading: 2 pF / 100 differential load Maximum data rate (for MSIOD I/O bank) DMAX 700 Mbps AC loading: 2 pF / 100 differential load Table 208 * RSDS AC Impedance Specifications Parameter Symbol Typ Unit Termination resistance RT 100 Table 209 * RSDS AC Test Parameter Specifications Parameter Symbol Typ Unit Measuring/trip point for data path VTRIP Cross point V Resistance for enable path (TZH, TZL, THZ, TLZ) RENT 2K Capacitive loading for enable path (TZH, TZL, THZ, TLZ) CENT 5 pF Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 63 IGLOO2 FPGA and SmartFusion2 SoC FPGA AC Switching Characteristics Worst commercial-case conditions: TJ = 85 C, VDD = 1.14 V, VDDI = 2.375 V. Table 210 * RSDS AC Switching Characteristics for Receiver (for MSIO I/O Bank - Input Buffers) TPY On-Die Termination (ODT) -1 -Std Unit None 2.855 3.359 ns 100 2.85 3.353 ns Table 211 * RSDS AC Switching Characteristics for Receiver (for MSIOD I/O Bank - Input Buffers) TPY On-Die Termination (ODT) -1 -Std Unit None 2.602 3.061 ns 100 2.597 3.055 ns Table 212 * RSDS AC Switching Characteristics for Transmitter (for MSIO I/O Bank - Output and Tristate Buffers) TZL TDP -1 -Std -1 2.097 2.467 2.303 TZH THZ TLZ -Std -1 -Std -1 -Std -1 2.709 2.291 2.695 1.961 2.307 1.947 -Std Unit 2.29 ns Table 213 * RSDS AC Switching Characteristics for Transmitter (for MSIOD I/O Bank - Output and Tristate Buffers) TZL TDP -1 -Std No pre-emphasis 1.614 Min pre-emphasis -1 TZH THZ TLZ -Std -1 -Std -1 -Std -1 -Std Unit 1.899 1.559 1.834 1.55 1.823 1.59 1.87 1.575 1.852 ns 1.604 1.887 1.742 2.05 1.728 2.032 1.889 2.222 1.858 2.185 ns Med pre-emphasis 1.521 1.79 1.753 2.062 1.737 2.043 1.9 2.235 1.868 2.197 ns Max pre-emphasis 1.492 1.754 1.762 2.073 1.745 2.052 1.91 2.247 1.876 2.206 ns 2.3.7.6 LVPECL Low-Voltage Positive Emitter-Coupled Logic (LVPECL) is another differential I/O standard. It requires that one data bit be carried through two signal lines. Similar to LVDS, two pins are needed. It also requires external resistor termination. IGLOO2 and SmartFusion2 SoC FPGAs support only LVPECL receivers and do not support LVPECL transmitters. Minimum and Maximum Input and Output Levels (Applicable to MSIO I/O Bank Only) Table 214 * LVPECL Recommended DC Operating Conditions Parameter Symbol Min Typ Max Unit Supply voltage VDDI 3.15 3.3 3.45 V Table 215 * LVPECL DC Input Voltage Specification Parameter Symbol Min Max Unit DC input voltage VI 0 3.45 V Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 64 IGLOO2 FPGA and SmartFusion2 SoC FPGA Table 216 * LVPECL DC Differential Voltage Specification Parameter Symbol Min Input common mode voltage VICM 0.3 Input differential voltage VIDIFF 100 Typ 300 Max Unit 2.8 V 1,000 mV Table 217 * LVPECL Minimum and Maximum AC Switching Speeds Parameter Symbol Max Unit Maximum data rate DMAX 900 Mbps AC Switching Characteristics Worst commercial-case conditions: TJ = 85 C, VDD = 1.14 V, VDDI = 2.375 V. Table 218 * LVPECL Receiver Characteristics for MSIO I/O Bank TPY On-Die Termination (ODT) -1 -Std Unit None 2.572 3.025 ns 100 2.569 3.023 ns 2.3.8 I/O Register Specifications This section describes input and output register specifications. 2.3.8.1 Input Register Figure 6 * Timing Model for Input Register F D EN Input I/O Buffer ALn A B C D ALn SLn SLE SD SD LAT LAT E CLK Q Q EN ADn ADn SLn G D CLK Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 65 IGLOO2 FPGA and SmartFusion2 SoC FPGA Figure 7 * I/O Register Input Timing Diagram W,&.03:/ W,&.03:+ &/. W,68' ' W,+' $'Q 6' W,686/Q W,+6/Q 6/Q W,5(0$/Q W,:$/Q $/Q W,68( W,5(&$/Q W,+( (1 W,$/Q4 4 W,&/.4 Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 66 IGLOO2 FPGA and SmartFusion2 SoC FPGA The following table lists the input data register propagation delays in worst commercial-case conditions when TJ = 85 C, VDD = 1.14 V. Table 219 * Input Data Register Propagation Delays Parameter Symbol Measuring Nodes (from, to)1 -1 Bypass delay of the input register TIBYP F, G 0.353 0.415 ns Clock-to-Q of the input register TICLKQ E, G 0.16 0.188 ns Data setup time for the input register TISUD A, E 0.357 0.421 ns Data hold time for the input register TIHD A, E 0 0 ns Enable setup time for the input register TISUE B, E 0.46 0.542 ns Enable hold time for the input register TIHE B, E 0 0 ns Synchronous load setup time for the input register TISUSL D, E 0.46 0.542 ns Synchronous load hold time for the input register TIHSL D, E 0 0 ns Asynchronous clear-to-Q of the input register (ADn=1) TIALN2Q C, G 0.625 0.735 ns C, G 0.587 0.69 ns Asynchronous preset-to-Q of the input register (ADn=0) -Std Unit Asynchronous load removal time for the input register TIREMALN C, E 0 0 ns Asynchronous load recovery time for the input register TIRECALN C, E 0.074 0.087 ns Asynchronous load minimum pulse width for the input register TIWALN C, C 0.304 0.357 ns Clock minimum pulse width high for the input register TICKMPWH E, E 0.075 0.088 ns Clock minimum pulse width low for the input register TICKMPWL E, E 0.159 0.187 ns 1. For the derating values at specific junction temperature and voltage supply levels, see Table 16, page 15 for derating values. Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 67 IGLOO2 FPGA and SmartFusion2 SoC FPGA 2.3.8.2 Output/Enable Register Figure 8 * Timing Model for Output/Enable Register A D F D B EN ALn C ADn D SLn LAT LAT D2 SLE SD SD CLK Q ALn ADn SLn G EN E J CLK H I D Q EN Output I/O Buffer with Enable Control ALn ADn SLE SLn SD LAT CLK Output/Enable Registers Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 68 IGLOO2 FPGA and SmartFusion2 SoC FPGA Figure 9 * I/O Register Output Timing Diagram W2&.03:/ W2&.03:+ W2+'( &ON W268( W2+' W268' ' $'Q 6' W2686/Q W2+'6/Q 6/Q (1 W25(0$/Q $/Q W25(&$/Q W2$/Q4 2XW C W2&/.4 The following table lists the output/enable propagation delays in worst commercial-case conditions when TJ = 85 C, VDD = 1.14 V. Table 220 * Output/Enable Data Register Propagation Delays Parameter Symbol Measuring Nodes (from, to)1 -1 Bypass delay of the output/enable register TOBYP F, G or H, I 0.353 0.415 ns Clock-to-Q of the output/enable register TOCLKQ E, G or E, I 0.263 0.309 ns Data setup time for the output/enable register TOSUD A, E or J, E 0.19 0.223 ns Data hold time for the output/enable register TOHD A, E or J, E 0 0 ns Enable setup time for the output/enable register TOSUE B, E 0.419 0.493 ns Enable hold time for the output/enable register TOHE B, E 0 0 ns Synchronous load setup time for the output/enable register TOSUSL D, E 0.196 0.231 ns Synchronous load hold time for the output/enable register TOHSL D, E 0 0 ns Asynchronous clear-to-q of the output/enable register (ADn = 1) TOALN2Q C, G or C, I 0.505 0.594 ns C, G or C, I 0.528 0.621 ns Asynchronous preset-to-q of the output/enable register (ADn = 0) -Std Unit Asynchronous load removal time for the output/enable register TOREMALN C, E 0 0 ns Asynchronous load recovery time for the output/enable register TORECALN C, E 0.034 0.04 ns Asynchronous load minimum pulse width for the output/enable register TOWALN C, C 0.304 0.357 Clock minimum pulse width high for the output/enable register TOCKMPWH E, E 0.075 0.088 ns Clock minimum pulse width low for the output/enable register TOCKMPWL E, E 0.159 0.187 ns 1. ns For the derating values at specific junction temperature and voltage supply levels, see Table 16, page 15 for derating values. Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 69 IGLOO2 FPGA and SmartFusion2 SoC FPGA 2.3.9 DDR Module Specification This section describes input and output DDR module and timing specifications. 2.3.9.1 Input DDR Module Figure 10 * Input DDR Module D EN ALn ADn SLn A F CLK QR Q EN ALn ADn G SLn SLE SD SD LAT C D E LAT B CLK D ALn ADn Q D D Q EN Latch QF ALn ADn SLn CLK SLE SD LAT CLK DDR_IN Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 70 IGLOO2 FPGA and SmartFusion2 SoC FPGA 2.3.9.2 Input DDR Timing Diagram Figure 11 * Input DDR Timing Diagram W''5,&.03:/ W''5,&.03:+ &/. W''5,68' ' W''5,+' $'Q 6' W''5,686/Q W''5,+6/Q 6/Q W''5,:$/ W''5,+( $/Q W''5,5(0$/ W''5,5(&$/ W''5,68( (1 W''5,$/4 45 W''5,&/.4 W''5,$/4 W''5,&/.4 4) 2.3.9.3 Timing Characteristics The following table lists the input DDR propagation delays in worst commercial-case conditions when TJ = 85 C, VDD = 1.14 V. Table 221 * Input DDR Propagation Delays Symbol Description Measuring Nodes (from, to) -1 -Std Unit TDDRICLKQ1 Clock-to-Out Out_QR for input DDR B, C 0.16 0.188 ns TDDRICLKQ2 Clock-to-Out Out_QF for input DDR B, D 0.166 0.195 ns TDDRISUD Data setup for input DDR A, B 0.357 0.421 ns TDDRIHD Data hold for input DDR A, B 0 0 ns TDDRISUE Enable setup for input DDR E, B 0.46 0.542 ns TDDRIHE Enable hold for input DDR E, B 0 0 ns TDDRISUSLN Synchronous load setup for input DDR G, B 0.46 0.542 ns TDDRIHSLN Synchronous load hold for input DDR G, B 0 0 ns TDDRIAL2Q1 Asynchronous load-to-out QR for input DDR F, C 0.587 0.69 ns TDDRIAL2Q2 Asynchronous load-to-out QF for input DDR F, D 0.541 0.636 ns TDDRIREMAL Asynchronous load removal time for input DDR F, B 0 0 ns TDDRIRECAL Asynchronous load recovery time for input DDR F, B 0.074 0.087 ns Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 71 IGLOO2 FPGA and SmartFusion2 SoC FPGA Table 221 * Input DDR Propagation Delays (continued) Measuring Nodes (from, to) -1 -Std Unit F, F 0.304 0.357 ns TDDRICKMPWH Clock minimum pulse width high for input DDR B, B 0.075 0.088 ns TDDRICKMPWL B, B 0.159 0.187 ns Symbol Description TDDRIWAL Asynchronous load minimum pulse width for input DDR Clock minimum pulse width low for input DDR Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 72 IGLOO2 FPGA and SmartFusion2 SoC FPGA 2.3.9.4 Output DDR Module Figure 12 * Output DDR Module A DR D B EN ALn C ADn D SLn SD SD LAT LAT CLK DF QR ALn ADn SLn Q EN E SLE 1 G Q CLK F D QF Q EN ALn ADn SLE SLn SD 0 LAT CLK DDR _ OUT Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 73 IGLOO2 FPGA and SmartFusion2 SoC FPGA Figure 13 * Output DDR Timing Diagram W''5268( W''52&.03:/ W''52&.03:+ &ON W''52+'( W''52+'5 W''5268'5 '5 W''5268') ') W''52+') $'Q 6' W''52686/Q W''52+'6/Q 6/Q (1 W''52:$/ W''525(0$ $/Q W''525(&$/ C W''52&/.4 W''52$/4 2XW 2.3.9.5 Timing Characteristics The following table lists the output DDR propagation delays in worst commercial-case conditions when TJ = 85 C, VDD = 1.14 V. Table 222 * Output DDR Propagation Delays Symbol Description Measuring Nodes (from, to) -1 -Std Unit TDDROCLKQ Clock-to-out of DDR for output DDR E, G 0.263 0.309 ns TDDROSUDF Data_F data setup for output DDR F, E 0.143 0.168 ns TDDROSUDR Data_R data setup for output DDR A, E 0.19 0.223 ns TDDROHDF Data_F data hold for output DDR F, E 0 0 ns TDDROHDR Data_R data hold for output DDR A, E 0 0 ns TDDROSUE Enable setup for input DDR B, E 0.419 0.493 ns TDDROHE Enable hold for input DDR B, E 0 0 ns TDDROSUSLN Synchronous load setup for input DDR D, E 0.196 0.231 ns TDDROHSLN Synchronous load hold for input DDR D, E 0 0 ns TDDROAL2Q Asynchronous load-to-out for output DDR C, G 0.528 0.621 ns TDDROREMAL Asynchronous load removal time for output DDR C, E 0 0 ns TDDRORECAL Asynchronous load recovery time for output DDR C, E 0.034 0.04 ns Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 74 IGLOO2 FPGA and SmartFusion2 SoC FPGA Table 222 * Output DDR Propagation Delays (continued) Measuring Nodes (from, to) -1 Symbol Description -Std Unit TDDROWAL Asynchronous load minimum pulse width for output C, C DDR 0.304 0.357 ns TDDROCKMPWH Clock minimum pulse width high for the output DDR E, E 0.075 0.088 ns TDDROCKMPWL Clock minimum pulse width low for the output DDR 0.159 0.187 ns 2.3.10 Logic Element Specifications 2.3.10.1 4-input LUT (LUT-4) E, E The IGLOO2 and SmartFusion2 SoC FPGAs offer a fully permutable 4-input LUT. In this section, timing characteristics are presented for a sample of the library. For more details, see SmartFusion2 and IGLOO2 Macro Library Guide. Figure 14 * LUT-4 TPD A PAD B PAD AND4 OR Any Combinational Logic C PAD PAD D/S (where applicable) PAD VDD A, B, C, D, S Y 50% 50% TPD = Max(tPD(RR), TPD(RF), TPD(FF), TPD(FR)) where edges are applicable for the particular combinatorial cell GND VDD 50% 50% OUT GND TPD VDD (RR) TPD (FF) OUT TPD (RF) 50% TPD (FR) 50% GND Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 75 IGLOO2 FPGA and SmartFusion2 SoC FPGA 2.3.10.2 Timing Characteristics The following table lists the combinatorial cell propagation delays in worst commercial-case conditions when TJ = 85 C, VDD = 1.14 V. Table 223 * Combinatorial Cell Propagation Delays 2.3.10.3 Combinatorial Cell Equation Symbol -1 -Std Unit INV Y = !A TPD 0.1 0.118 ns AND2 Y=A*B TPD 0.164 0.193 ns NAND2 Y = !(A * B) TPD 0.147 0.173 ns OR2 Y=A+B TPD 0.164 0.193 ns NOR2 Y = !(A + B) TPD 0.147 0.173 ns XOR2 Y=AB TPD 0.164 0.193 ns XOR3 Y=ABC TPD 0.225 0.265 ns AND3 Y=A*B*C TPD 0.209 0.246 ns AND4 Y=A*B*C*D TPD 0.287 0.338 ns Sequential Module IGLOO2 and SmartFusion2 SoC FPGAs offer a separate flip-flop which can be used independently from the LUT. The flip-flop can be configured as a register or a latch and has a data input and optional enable, synchronous load (clear or preset), and asynchronous load (clear or preset). Figure 15 * Sequential Module D Q EN ALn ADn SLn SLE SD LAT CLK Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 76 IGLOO2 FPGA and SmartFusion2 SoC FPGA The following figure shows a configuration with SD = 0 (synchronous clear) and ADn = 1 (asynchronous clear) for a flip-flop (LAT = 0). Figure 16 * Sequential Module Timing Diagram W&.03:+ &/. W68' ' W&.03:/ W+' 6' $'Q ( W+6/ W686/ W68( W+( 6/ W5(0$/Q W:$/Q $/Q W5(&$/Q W$/Q4 4 W&/.4 2.3.10.3.1 Timing Characteristics The following table lists the register delays in worst commercial-case conditions when TJ = 85 C, VDD = 1.14 V. Table 224 * Register Delays Parameter Symbol -1 -Std Unit Clock-to-Q of the core register TCLKQ 0.108 0.127 ns Data setup time for the core register TSUD 0.254 0.298 ns Data hold time for the core register THD 0 0 ns Enable setup time for the core register TSUE 0.335 0.394 ns Enable hold time for the core register THE 0 0 ns Synchronous load setup time for the core register TSUSL 0.335 0.394 ns Synchronous load hold time for the core register THSL 0 0 ns 0.473 0.556 ns 0.451 0.531 ns Asynchronous Clear-to-Q of the core register (ADn = 1) Asynchronous preset-to-Q of the core register (ADn = 0) TALN2Q Asynchronous load removal time for the core register TREMALN 0 0 ns Asynchronous load recovery time for the core register TRECALN 0.353 0.415 ns Asynchronous load minimum pulse width for the core register TWALN 0.266 0.313 ns Clock minimum pulse width high for the core register TCKMPWH 0.065 0.077 ns Clock minimum pulse width low for the core register TCKMPWL 0.139 0.164 ns Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 77 IGLOO2 FPGA and SmartFusion2 SoC FPGA 2.3.11 Global Resource Characteristics The IGLOO2 and SmartFusion2 SoC FPGA devices offer a powerful, low skew global routing network which provides an effective clock distribution throughout the FPGA fabric. See UG0445: IGLOO2 FPGA and SmartFusion2 SoC FPGA Fabric User Guide for the positions of various global routing resources. The following table lists the 150 device global resources in worst commercial-case conditions when TJ = 85 C, VDD = 1.14 V. Table 225 * 150 Device Global Resource -1 -Std Parameter Symbol Min Max Min Max Unit Input low delay for global clock TRCKL 0.83 0.911 0.831 0.913 ns Input high delay for global clock TRCKH 1.457 1.588 1.715 1.869 ns Maximum skew for global clock TRCKSW 0.154 ns 0.131 The following table lists the 090 device global resources in worst commercial-case conditions when TJ = 85 C, VDD = 1.14 V. Table 226 * 090 Device Global Resource -1 Parameter -Std Symbol Min Max Min Max Unit Input low delay for global clock TRCKL 0.835 0.888 0.833 0.886 ns Input high delay for global clock TRCKH 1.405 1.489 1.654 1.752 ns Maximum skew for global clock TRCKSW 0.098 ns 0.084 The following table lists the 050 device global resources in worst commercial-case conditions when TJ = 85 C, VDD = 1.14 V. Table 227 * 050 Device Global Resource -1 -Std Parameter Symbol Min Max Min Max Unit Input low delay for global clock TRCKL 0.827 0.897 0.826 0.896 ns Input high delay for global clock TRCKH 1.419 1.53 1.671 1.8 ns Maximum skew for global clock TRCKSW 0.129 ns 0.111 The following table lists the 025 device global resources in worst commercial-case conditions when TJ = 85 C, VDD = 1.14 V. Table 228 * 025 Device Global Resource -1 -Std Parameter Symbol Min Max Min Max Unit Input low delay for global clock TRCKL 0.747 0.799 0.745 0.797 ns Input high delay for global clock TRCKH 1.294 1.378 1.522 1.621 ns Maximum skew for global clock TRCKSW 0.099 ns 0.084 Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 78 IGLOO2 FPGA and SmartFusion2 SoC FPGA The following table lists the 010 device global resources in worst commercial-case conditions when TJ = 85 C, VDD = 1.14 V. Table 229 * 010 Device Global Resource -1 -Std Parameter Symbol Min Max Min Max Unit Input low delay for global clock TRCKL 0.626 0.669 0.627 0.668 ns Input high delay for global clock TRCKH 1.112 1.182 1.308 1.393 ns Maximum skew for global clock TRCKSW 0.085 ns 0.07 The following table lists the 005 device global resources in worst commercial-case conditions when TJ = 85 C, VDD = 1.14 V. Table 230 * 005 Device Global Resource -1 2.3.12 -Std Parameter Symbol Min Max Min Max Unit Input low delay for global clock TRCKL 0.625 0.66 Input high delay for global clock TRCKH 1.126 1.187 1.325 1.397 ns Maximum skew for global clock TRCKSW 0.628 0.66 0.061 ns 0.072 ns FPGA Fabric SRAM See UG0445: IGLOO2 FPGA and SmartFusion2 SoC FPGA Fabric User Guide for more information. 2.3.12.1 FPGA Fabric Large SRAM (LSRAM) The following table lists the RAM1K18 - dual-port mode for depth x width configuration 1K x 18 in worst commercial-case conditions when TJ = 85 C, VDD = 1.14 V. Table 231 * RAM1K18 - Dual-Port Mode for Depth x Width Configuration 1K x 18 -1 Parameter Symbol Min Clock period TCY 2.5 2.941 ns Clock minimum pulse width high TCLKMPWH 1.125 1.323 ns Clock minimum pulse width low TCLKMPWL 1.125 1.323 ns Pipelined clock period TPLCY 2.5 2.941 ns Pipelined clock minimum pulse width high TPLCLKMPWH 1.125 1.323 ns Pipelined clock minimum pulse width low TPLCLKMPWL 1.125 Read access time with pipeline register Read access time without pipeline register TCLK2Q Access time with feed-through write timing Max -Std Min Max 1.323 Unit ns 0.334 0.393 ns 2.273 2.674 ns 1.799 ns 1.529 Address setup time TADDRSU 0.441 0.519 ns Address hold time TADDRHD 0.274 0.322 ns Data setup time TDSU 0.341 0.401 ns Data hold time TDHD 0.107 0.126 ns Block select setup time TBLKSU 0.207 0.244 ns Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 79 IGLOO2 FPGA and SmartFusion2 SoC FPGA Table 231 * RAM1K18 - Dual-Port Mode for Depth x Width Configuration 1K x 18 (continued) -1 Parameter Symbol Min Block select hold time TBLKHD 0.216 Block select to out disable time (when pipelined register is TBLK2Q disabled) -Std Max Min Max 0.254 Unit ns 1.529 1.799 ns Block select minimum pulse width TBLKMPW 0.186 0.219 ns Read enable setup time TRDESU 0.449 0.528 ns Read enable hold time TRDEHD 0.167 0.197 ns Pipelined read enable setup time (A_DOUT_EN, B_DOUT_EN) TRDPLESU 0.248 0.291 ns Pipelined read enable hold time (A_DOUT_EN, B_DOUT_EN) TRDPLEHD 0.102 0.12 ns Asynchronous reset to output propagation delay TR2Q - Asynchronous reset removal time TRSTREM 0.506 0.595 ns Asynchronous reset recovery time TRSTREC 0.004 0.005 ns Asynchronous reset minimum pulse width TRSTMPW 0.301 0.354 ns Pipelined register asynchronous reset removal time TPLRSTREM -0.279 -0.328 ns Pipelined register asynchronous reset recovery time TPLRSTREC 0.327 0.385 ns Pipelined register asynchronous reset minimum pulse width TPLRSTMPW 0.282 0.332 ns Synchronous reset setup time TSRSTSU 0.226 0.265 ns Synchronous reset hold time TSRSTHD 0.036 0.043 ns Write enable setup time TWESU 0.39 0.458 ns Write enable hold time TWEHD 0.242 Maximum frequency FMAX 1.506 - 1.772 0.285 ns ns 400 340 MHz The following table lists the RAM1K18 - dual-port mode for depth x width configuration 2K x 9 in worst commercial-case conditions when TJ = 85 C, VDD = 1.14 V. Table 232 * RAM1K18 - Dual-Port Mode for Depth x Width Configuration 2K x 9 -1 -Std Parameter Symbol Min Clock period TCY 2.5 2.941 ns Clock minimum pulse width high TCLKMPWH 1.125 1.323 ns Clock minimum pulse width low TCLKMPWL 1.125 1.323 ns Pipelined clock period TPLCY 2.5 2.941 ns Pipelined clock minimum pulse width high TPLCLKMPWH 1.125 1.323 ns Pipelined clock minimum pulse width low TPLCLKMPWL 1.125 1.323 ns Read access time with pipeline register Read access time without pipeline register Access time with feed-through write timing TCLK2Q Max Min Max Unit 0.334 0.393 ns 2.273 2.674 ns 1.529 1.799 ns Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 80 IGLOO2 FPGA and SmartFusion2 SoC FPGA Table 232 * RAM1K18 - Dual-Port Mode for Depth x Width Configuration 2K x 9 (continued) -1 Parameter Symbol Min -Std Max Min Max Unit Address setup time TADDRSU 0.475 0.559 ns Address hold time TADDRHD 0.274 0.322 ns Data setup time TDSU 0.336 0.395 ns Data hold time TDHD 0.082 0.096 ns Block select setup time TBLKSU 0.207 0.244 ns Block select hold time TBLKHD 0.216 0.254 ns Block select to out disable time (when pipelined register is disabled) TBLK2Q Block select minimum pulse width TBLKMPW 0.186 0.219 ns Read enable setup time TRDESU 0.485 0.57 ns Read enable hold time TRDEHD 0.071 0.083 ns Pipelined read enable setup time (A_DOUT_EN, B_DOUT_EN) TRDPLESU 0.248 0.291 ns Pipelined read enable hold time (A_DOUT_EN, B_DOUT_EN) TRDPLEHD 0.102 0.12 ns Asynchronous reset to output propagation delay TR2Q Asynchronous reset removal time TRSTREM 0.506 0.595 ns Asynchronous reset recovery time TRSTREC 0.004 0.005 ns Asynchronous reset minimum pulse width TRSTMPW 0.301 0.354 ns Pipelined register asynchronous reset removal time TPLRSTREM -0.279 -0.328 ns Pipelined register asynchronous reset recovery time TPLRSTREC 0.327 0.385 ns Pipelined register asynchronous reset minimum pulse width TPLRSTMPW 0.282 0.332 ns Synchronous reset setup time TSRSTSU 0.226 0.265 ns Synchronous reset hold time TSRSTHD 0.036 0.043 ns Write enable setup time TWESU 0.415 0.488 ns Write enable hold time TWEHD 0.048 0.057 ns Maximum frequency FMAX 1.529 1.799 ns 1.514 1.781 ns 400 340 MHz The following table lists the RAM1K18 - dual-port mode for depth x width configuration 4K x 4 in worst commercial-case conditions when TJ = 85 C, VDD = 1.14 V. Table 233 * RAM1K18 - Dual-Port Mode for Depth x Width Configuration 4K x 4 -1 -Std Parameter Symbol Min Max Min Clock period TCY 2.5 2.941 ns Clock minimum pulse width high TCLKMPWH 1.125 1.323 ns Clock minimum pulse width low TCLKMPWL 1.125 1.323 ns Pipelined clock period TPLCY 2.5 2.941 ns Pipelined clock minimum pulse width high TPLCLKMPWH 1.125 1.323 ns Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 Max Unit 81 IGLOO2 FPGA and SmartFusion2 SoC FPGA Table 233 * RAM1K18 - Dual-Port Mode for Depth x Width Configuration 4K x 4 (continued) -1 Parameter Symbol Min Pipelined clock minimum pulse width low TPLCLKMPWL 1.125 Read access time with pipeline register Read access time without pipeline register TCLK2Q Access time with feed-through write timing -Std Max Min Max Unit 0.323 0.38 ns 2.273 2.673 ns 1.511 1.778 ns 1.323 ns Address setup time TADDRSU 0.543 0.638 ns Address hold time TADDRHD 0.274 0.322 ns Data setup time TDSU 0.334 0.393 ns Data hold time TDHD 0.082 0.096 ns Block select setup time TBLKSU 0.207 0.244 ns Block select hold time TBLKHD 0.216 0.254 ns Block select to out disable time (when pipelined register is disabled) TBLK2Q Block select minimum pulse width TBLKMPW 0.186 0.219 ns Read enable setup time TRDESU 0.516 0.607 ns Read enable hold time TRDEHD 0.071 0.083 ns Pipelined read enable setup time (A_DOUT_EN, B_DOUT_EN) TRDPLESU 0.248 0.291 ns Pipelined read enable hold time (A_DOUT_EN, B_DOUT_EN) TRDPLEHD 0.102 0.12 ns Asynchronous reset to output propagation delay TR2Q Asynchronous reset removal time TRSTREM 0.506 0.595 ns Asynchronous reset recovery time TRSTREC 0.004 0.005 ns Asynchronous reset minimum pulse width TRSTMPW 0.301 0.354 ns Pipelined register asynchronous reset removal time TPLRSTREM -0.279 -0.328 ns Pipelined register asynchronous reset recovery time TPLRSTREC 0.327 0.385 ns Pipelined register asynchronous reset minimum pulse TPLRSTMPW width 0.282 0.332 ns Synchronous reset setup time TSRSTSU 0.226 0.265 ns Synchronous reset hold time TSRSTHD 0.036 0.043 ns Write enable setup time TWESU 0.458 0.539 ns Write enable hold time TWEHD 0.048 Maximum frequency FMAX 1.511 1.778 1.507 1.773 0.057 400 Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 ns ns ns 340 MHz 82 IGLOO2 FPGA and SmartFusion2 SoC FPGA The following table lists the RAM1K18 - dual-port mode for depth x width configuration 8K x 2 in worst commercial-case conditions when TJ = 85 C, VDD = 1.14 V. Table 234 * RAM1K18 - Dual-Port Mode for Depth x Width Configuration 8K x 2 -1 -Std Parameter Symbol Min Clock period TCY 2.5 2.941 ns Clock minimum pulse width high TCLKMPWH 1.125 1.323 ns Clock minimum pulse width low TCLKMPWL 1.125 1.323 ns Pipelined clock period TPLCY 2.5 2.941 ns Pipelined clock minimum pulse width high TPLCLKMPWH 1.125 1.323 ns Pipelined clock minimum pulse width low TPLCLKMPWL 1.125 Read access time with pipeline register Read access time without pipeline register TCLK2Q Access time with feed-through write timing Max Min Max 1.323 Unit ns 0.32 0.377 ns 2.272 2.673 ns 1.511 1.778 ns Address setup time TADDRSU 0.612 0.72 ns Address hold time TADDRHD 0.274 0.322 ns Data setup time TDSU 0.33 0.388 ns Data hold time TDHD 0.082 0.096 ns Block select setup time TBLKSU 0.207 0.244 ns Block select hold time TBLKHD 0.216 Block select to out disable time (when pipelined register is disabled) TBLK2Q Block select minimum pulse width TBLKMPW 0.186 0.219 ns Read enable setup time TRDESU 0.529 0.622 ns Read enable hold time TRDEHD 0.071 0.083 ns Pipelined read enable setup time (A_DOUT_EN, B_DOUT_EN) TRDPLESU 0.248 0.291 ns Pipelined read enable hold time (A_DOUT_EN, B_DOUT_EN) TRDPLEHD 0.102 0.12 ns 0.254 1.511 ns 1.778 ns Asynchronous reset to output propagation delay TR2Q 1.528 Asynchronous reset removal time TRSTREM 0.506 0.595 ns Asynchronous reset recovery time TRSTREC 0.004 0.005 ns Asynchronous reset minimum pulse width TRSTMPW 0.301 0.354 ns Pipelined register asynchronous reset removal time TPLRSTREM -0.279 -0.328 ns Pipelined register asynchronous reset recovery time TPLRSTREC 0.327 0.385 ns Pipelined register asynchronous reset minimum pulse width TPLRSTMPW 0.282 0.332 ns Synchronous reset setup time TSRSTSU 0.226 0.265 ns Synchronous reset hold time TSRSTHD 0.036 0.043 ns Write enable setup time TWESU 0.488 0.574 ns Write enable hold time TWEHD 0.048 0.057 ns Maximum frequency FMAX 400 Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 1.797 ns 340 MHz 83 IGLOO2 FPGA and SmartFusion2 SoC FPGA The following table lists the RAM1K18 - dual-port mode for depth x width configuration 16K x 1 in worst commercial-case conditions when TJ = 85 C, VDD = 1.14 V. Table 235 * RAM1K18 - Dual-Port Mode for Depth x Width Configuration 16K x 1 -1 -Std Parameter Symbol Min Clock period TCY 2.5 2.941 ns Clock minimum pulse width high TCLKMPWH 1.125 1.323 ns Clock minimum pulse width low TCLKMPWL 1.125 1.323 ns Pipelined clock period TPLCY 2.5 2.941 ns Pipelined clock minimum pulse width high TPLCLKMPWH 1.125 1.323 ns Pipelined clock minimum pulse width low TPLCLKMPWL 1.125 Read access time with pipeline register Read access time without pipeline register TCLK2Q Access time with feed-through write timing Max Min Max 1.323 Unit ns 0.32 0.377 ns 2.269 2.669 ns 1.51 1.777 ns Address setup time TADDRSU 0.626 0.737 ns Address hold time TADDRHD 0.274 0.322 ns Data setup time TDSU 0.322 0.378 ns Data hold time TDHD 0.082 0.096 ns Block select setup time TBLKSU 0.207 0.244 ns Block select hold time TBLKHD 0.216 Block select to out disable time (when pipelined register is disabled) TBLK2Q Block select minimum pulse width TBLKMPW 0.186 0.219 ns Read enable setup time TRDESU 0.53 0.624 ns Read enable hold time TRDEHD 0.071 0.083 ns Pipelined read enable setup time (A_DOUT_EN, B_DOUT_EN) TRDPLESU 0.248 0.291 ns Pipelined read enable hold time (A_DOUT_EN, B_DOUT_EN) TRDPLEHD 0.102 0.12 ns Asynchronous reset to output propagation delay TR2Q Asynchronous reset removal time TRSTREM 0.506 0.595 ns Asynchronous reset recovery time TRSTREC 0.004 0.005 ns Asynchronous reset minimum pulse width TRSTMPW 0.301 0.354 ns Pipelined register asynchronous reset removal time TPLRSTREM -0.279 -0.328 ns Pipelined register asynchronous reset recovery time TPLRSTREC 0.327 0.385 ns Pipelined register asynchronous reset minimum pulse width TPLRSTMPW 0.282 0.332 ns Synchronous reset setup time TSRSTSU 0.226 0.265 ns Synchronous reset hold time TSRSTHD 0.036 0.043 ns Write enable setup time TWESU 0.454 0.534 ns Write enable hold time TWEHD 0.048 0.057 ns Maximum frequency FMAX 0.254 1.51 ns 1.777 ns 1.547 1.82 400 Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 340 ns MHz 84 IGLOO2 FPGA and SmartFusion2 SoC FPGA The following table lists the RAM1K18 - two-port mode for depth x width configuration 512 x 36 in worst commercial-case conditions when TJ = 85 C, VDD = 1.14 V. Table 236 * RAM1K18 - Two-Port Mode for Depth x Width Configuration 512 x 36 -1 -Std Parameter Symbol Min Clock period TCY 2.5 2.941 ns Clock minimum pulse width high TCLKMPWH 1.125 1.323 ns Clock minimum pulse width low TCLKMPWL 1.125 1.323 ns Pipelined clock period TPLCY 2.5 2.941 ns Pipelined clock minimum pulse width high TPLCLKMPWH 1.125 1.323 ns Pipelined clock minimum pulse width low TPLCLKMPWL 1.125 Read access time with pipeline register Read access time without pipeline register TCLK2Q Max Min Max 1.323 Unit ns 0.334 0.393 ns 2.25 2.647 ns Address setup time TADDRSU 0.313 0.368 ns Address hold time TADDRHD 0.274 0.322 ns Data setup time TDSU 0.337 0.396 ns Data hold time TDHD 0.111 0.13 ns Block select setup time TBLKSU 0.207 0.244 ns Block select hold time TBLKHD 0.201 0.237 ns Block select to out disable time (when pipelined register is disabled) TBLK2Q Block select minimum pulse width TBLKMPW 0.186 0.219 ns Read enable setup time TRDESU 0.449 0.528 ns Read enable hold time TRDEHD 0.167 0.197 ns Pipelined read enable setup time (A_DOUT_EN, B_DOUT_EN) TRDPLESU 0.248 0.291 ns Pipelined read enable hold time (A_DOUT_EN, B_DOUT_EN) TRDPLEHD 0.102 0.12 ns Asynchronous reset to output propagation delay TR2Q Asynchronous reset removal time TRSTREM 0.506 0.595 ns Asynchronous reset recovery time TRSTREC 0.004 0.005 ns Asynchronous reset minimum pulse width TRSTMPW 0.301 0.354 ns Pipelined register asynchronous reset removal time TPLRSTREM -0.279 -0.328 ns Pipelined register asynchronous reset recovery time TPLRSTREC 0.327 0.385 ns Pipelined register asynchronous reset minimum pulse width TPLRSTMPW 0.282 0.332 ns Synchronous reset setup time TSRSTSU 0.226 0.265 ns Synchronous reset hold time TSRSTHD 0.036 0.043 ns Write enable setup time TWESU 0.39 0.458 ns Write enable hold time TWEHD 0.242 0.285 ns Maximum frequency FMAX 2.25 2.647 ns 1.506 400 Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 1.772 ns 340 MHz 85 IGLOO2 FPGA and SmartFusion2 SoC FPGA 2.3.12.2 FPGA Fabric Micro SRAM (SRAM) The following table lists the SRAM in 64 x 18 mode in worst commercial-case conditions when TJ = 85 C, VDD = 1.14 V. Table 237 * SRAM (RAM64x18) in 64 x 18 Mode -1 Parameter Symbol Min Read clock period TCY 4 4 ns Read clock minimum pulse width high TCLKMPWH 1.8 1.8 ns Read clock minimum pulse width low TCLKMPWL 1.8 1.8 ns Read pipeline clock period TPLCY 4 4 ns Read pipeline clock minimum pulse width high TPLCLKMPWH 1.8 1.8 ns Read pipeline clock minimum pulse width low TPLCLKMPWL 1.8 1.8 ns Read access time with pipeline register Read access time without pipeline register Read address setup time in synchronous mode Read address setup time in asynchronous mode Read address hold time in synchronous mode Read address hold time in asynchronous mode TCLK2Q TADDRSU TADDRHD Max -Std Min Max Unit 0.266 0.313 ns 1.677 1.973 ns 0.301 0.354 ns 1.856 2.184 ns 0.091 0.107 ns -0.778 -0.915 ns Read enable setup time TRDENSU 0.278 0.327 ns Read enable hold time TRDENHD 0.057 0.067 ns Read block select setup time TBLKSU 1.839 2.163 ns Read block select hold time TBLKHD -0.65 -0.765 ns Read block select to out disable time (when pipelined register is disabled) TBLK2Q Read asynchronous reset removal time (pipelined clock) Read asynchronous reset removal time (non-pipelined clock) TRSTREM Read asynchronous reset recovery time (pipelined clock) 2.036 2.396 ns -0.023 -0.027 ns 0.046 0.054 ns 0.507 0.597 ns 0.236 0.278 ns Read asynchronous reset recovery time (non-pipelined clock) TRSTREC Read asynchronous reset to output propagation delay (with pipelined register enabled) TR2Q Read synchronous reset setup time TSRSTSU 0.271 0.319 ns Read synchronous reset hold time TSRSTHD 0.061 0.071 ns Write clock period TCCY 4 4 ns Write clock minimum pulse width high TCCLKMPWH 1.8 1.8 ns Write clock minimum pulse width low TCCLKMPWL 1.8 1.8 ns Write block setup time TBLKCSU 0.404 0.476 ns Write block hold time TBLKCHD 0.007 0.008 ns Write input data setup time TDINCSU 0.115 0.135 ns Write input data hold time TDINCHD 0.15 0.177 ns 0.839 0.987 Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 ns 86 IGLOO2 FPGA and SmartFusion2 SoC FPGA Table 237 * SRAM (RAM64x18) in 64 x 18 Mode (continued) -1 -Std Parameter Symbol Min Max Min Max Write address setup time TADDRCSU 0.088 0.104 ns Write address hold time TADDRCHD 0.128 0.15 ns Write enable setup time TWECSU 0.397 0.467 ns Write enable hold time TWECHD -0.026 -0.03 ns Maximum frequency FMAX 250 250 Unit MHz The following table lists the SRAM in 64 x 16 mode in worst commercial-case conditions when TJ = 85 C, VDD = 1.14 V. Table 238 * SRAM (RAM64x16) in 64 x 16 Mode -1 Parameter Symbol Min Read clock period TCY 4 4 ns Read clock minimum pulse width high TCLKMPWH 1.8 1.8 ns Read clock minimum pulse width low TCLKMPWL 1.8 1.8 ns Read pipeline clock period TPLCY 4 4 ns Read pipeline clock minimum pulse width high TPLCLKMPWH 1.8 1.8 ns Read pipeline clock minimum pulse width low TPLCLKMPWL 1.8 1.8 ns Read access time with pipeline register Read access time without pipeline register Read address setup time in synchronous mode Read address setup time in asynchronous mode Read address hold time in synchronous mode Read address hold time in asynchronous mode TCLK2Q TADDRSU TADDRHD Max -Std Min Max Unit 0.266 0.313 ns 1.677 1.973 ns 0.301 0.354 ns 1.856 2.184 ns 0.091 0.107 ns -0.778 -0.915 ns Read enable setup time TRDENSU 0.278 0.327 ns Read enable hold time TRDENHD 0.057 0.067 ns Read block select setup time TBLKSU 1.839 2.163 ns Read block select hold time TBLKHD -0.65 -0.765 ns Read block select to out disable time (when pipelined register is disabled) TBLK2Q Read asynchronous reset removal time (pipelined clock) Read asynchronous reset removal time (non-pipelined clock) TRSTREM Read asynchronous reset recovery time (pipelined clock) Read asynchronous reset recovery time (non-pipelined clock) TRSTREC 2.036 TSRSTSU ns -0.023 -0.027 ns 0.046 0.054 ns 0.507 0.597 ns 0.236 0.278 ns Read asynchronous reset to output propagation delay (with TR2Q pipelined register enabled) Read synchronous reset setup time 2.396 0.835 0.271 0.983 0.319 Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 ns ns 87 IGLOO2 FPGA and SmartFusion2 SoC FPGA Table 238 * SRAM (RAM64x16) in 64 x 16 Mode (continued) -1 Max -Std Parameter Symbol Min Min Max Read synchronous reset hold time TSRSTHD 0.061 0.071 ns Write clock period TCCY 4 4 ns Write clock minimum pulse width high TCCLKMPWH 1.8 1.8 ns Write clock minimum pulse width low TCCLKMPWL 1.8 1.8 ns Write block setup time TBLKCSU 0.404 0.476 ns Write block hold time TBLKCHD 0.007 0.008 ns Write input data setup time TDINCSU 0.115 0.135 ns Write input data hold time TDINCHD 0.15 0.177 ns Write address setup time TADDRCSU 0.088 0.104 ns Write address hold time TADDRCHD 0.128 0.15 ns Write enable setup time TWECSU 0.397 0.467 ns Write enable hold time TWECHD -0.026 -0.03 ns Maximum frequency FMAX 250 250 Unit MHz The following table lists the SRAM in 128 x 9 mode in worst commercial-case conditions when TJ = 85 C, VDD = 1.14 V. Table 239 * SRAM (RAM128x9) in 128 x 9 Mode -1 Parameter Symbol Min Read clock period TCY 4 4 ns Read clock minimum pulse width high TCLKMPWH 1.8 1.8 ns Read clock minimum pulse width low TCLKMPWL 1.8 1.8 ns Read pipeline clock period TPLCY 4 4 ns Read pipeline clock minimum pulse width high TPLCLKMPWH 1.8 1.8 ns Read pipeline clock minimum pulse width low TPLCLKMPWL 1.8 1.8 ns Read access time with pipeline register Read access time without pipeline register Read address setup time in synchronous mode Read address setup time in asynchronous mode Read address hold time in synchronous mode Read address hold time in asynchronous mode TCLK2Q TADDRSU TADDRHD Max -Std Min Max Unit 0.266 0.313 ns 1.677 1.973 ns 0.301 0.354 ns 1.856 2.184 ns 0.091 0.107 ns -0.778 -0.915 ns Read enable setup time TRDENSU 0.278 0.327 ns Read enable hold time TRDENHD 0.057 0.067 ns Read block select setup time TBLKSU 1.839 2.163 ns Read block select hold time TBLKHD -0.65 -0.765 ns Read block select to out disable time (when pipelined register is disabled) TBLK2Q 2.036 Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 2.396 ns 88 IGLOO2 FPGA and SmartFusion2 SoC FPGA Table 239 * SRAM (RAM128x9) in 128 x 9 Mode (continued) -1 Parameter Symbol Read asynchronous reset removal time (pipelined clock) Read asynchronous reset removal time (non-pipelined clock) TRSTREM Read asynchronous reset recovery time (pipelined clock) Read asynchronous reset recovery time (non-pipelined clock) TRSTREC Min Max -Std Min Max Unit -0.023 -0.027 ns 0.046 0.054 ns 0.507 0.597 ns 0.236 0.278 ns Read asynchronous reset to output propagation delay (with TR2Q pipelined register enabled) 0.835 0.982 ns Read synchronous reset setup time TSRSTSU 0.271 0.319 ns Read synchronous reset hold time TSRSTHD 0.061 0.071 ns Write clock period TCCY 4 4 ns Write clock minimum pulse width high TCCLKMPWH 1.8 1.8 ns Write clock minimum pulse width low TCCLKMPWL 1.8 1.8 ns Write block setup time TBLKCSU 0.404 0.476 ns Write block hold time TBLKCHD 0.007 0.008 ns Write input data setup time TDINCSU 0.115 0.135 ns Write input data hold time TDINCHD 0.15 0.177 ns Write address setup time TADDRCSU 0.088 0.104 ns Write address hold time TADDRCHD 0.128 0.15 ns Write enable setup time TWECSU 0.397 0.467 ns Write enable hold time TWECHD -0.026 -0.03 ns Maximum frequency FMAX 250 250 MHz The following table lists the SRAM in 128 x 8 mode in worst commercial-case conditions when TJ = 85 C, VDD = 1.14 V. Table 240 * SRAM (RAM128x8) in 128 x 8 Mode -1 Parameter Symbol Min Read clock period TCY 4 4 ns Read clock minimum pulse width high TCLKMPWH 1.8 1.8 ns Read clock minimum pulse width low TCLKMPWL 1.8 1.8 ns Read pipeline clock period TPLCY 4 4 ns Read pipeline clock minimum pulse width high TPLCLKMPWH 1.8 1.8 ns Read pipeline clock minimum pulse width low TPLCLKMPWL 1.8 1.8 ns Read access time with pipeline register Read access time without pipeline register Read address setup time in synchronous mode Read address setup time in asynchronous mode TCLK2Q TADDRSU Max -Std Min Max Unit 0.266 0.313 ns 1.677 1.973 ns 0.301 0.354 ns 1.856 2.184 ns Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 89 IGLOO2 FPGA and SmartFusion2 SoC FPGA Table 240 * SRAM (RAM128x8) in 128 x 8 Mode (continued) -1 Parameter Symbol Read address hold time in synchronous mode Read address hold time in asynchronous mode TADDRHD Min Max -Std Min Max Unit 0.091 0.107 ns -0.778 -0.915 ns Read enable setup time TRDENSU 0.278 0.327 ns Read enable hold time TRDENHD 0.057 0.067 ns Read block select setup time TBLKSU 1.839 2.163 ns Read block select hold time TBLKHD -0.65 -0.765 ns Read block select to out disable time (when pipelined register is disabled) TBLK2Q Read asynchronous reset removal time (pipelined clock) Read asynchronous reset removal time (non-pipelined clock) TRSTREM Read asynchronous reset recovery time (pipelined clock) Read asynchronous reset recovery time (non-pipelined clock) TRSTREC 2.036 2.396 ns -0.023 -0.027 ns 0.046 0.054 ns 0.507 0.597 ns 0.236 0.278 ns Read asynchronous reset to output propagation delay (with TR2Q pipelined register enabled) 0.835 0.982 ns Read synchronous reset setup time TSRSTSU 0.271 0.319 ns Read synchronous reset hold time TSRSTHD 0.061 0.071 ns Write clock period TCCY 4 4 ns Write clock minimum pulse width high TCCLKMPWH 1.8 1.8 ns Write clock minimum pulse width low TCCLKMPWL 1.8 1.8 ns Write block setup time TBLKCSU 0.404 0.476 ns Write block hold time TBLKCHD 0.007 0.008 ns Write input data setup time TDINCSU 0.115 0.135 ns Write input data hold time TDINCHD 0.15 0.177 ns Write address setup time TADDRCSU 0.088 0.104 ns Write address hold time TADDRCHD 0.128 0.15 ns Write enable setup time TWECSU 0.397 0.467 ns Write enable hold time TWECHD -0.026 -0.03 ns Maximum frequency FMAX 250 Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 250 MHz 90 IGLOO2 FPGA and SmartFusion2 SoC FPGA The following table lists the SRAM in 256 x 4 mode in worst commercial-case conditions when TJ = 85 C, VDD = 1.14 V. Table 241 * SRAM (RAM256x4) in 256 x 4 Mode -1 Symbol Min Read clock period TCY 4 4 ns Read clock minimum pulse width high TCLKMPWH 1.8 1.8 ns Read clock minimum pulse width low TCLKMPWL 1.8 1.8 ns Read pipeline clock period TPLCY 4 4 ns Read pipeline clock minimum pulse width high TPLCLKMPWH 1.8 1.8 ns Read pipeline clock minimum pulse width low TPLCLKMPWL 1.8 Read access time with pipeline register Read access time without pipeline register Read address setup time in synchronous mode Read address setup time in asynchronous mode Read address hold time in synchronous mode Read address hold time in asynchronous mode TCLK2Q TADDRSU TADDRHD Max -Std Parameter Min Max 1.8 Unit ns 0.27 0.31 ns 1.75 2.06 ns 0.301 0.354 ns 1.931 2.272 ns 0.121 0.142 ns -0.65 -0.76 ns Read enable setup time TRDENSU 0.278 0.327 ns Read enable hold time TRDENHD 0.057 0.067 ns Read block select setup time TBLKSU 1.839 2.163 ns Read block select hold time TBLKHD -0.65 -0.77 ns Read block select to out disable time (when pipelined register is disabled) TBLK2Q Read asynchronous reset removal time (pipelined clock) Read asynchronous reset removal time (non-pipelined clock) TRSTREM Read asynchronous reset recovery time (pipelined clock) 2.09 2.46 ns -0.02 -0.03 ns 0.046 0.054 ns 0.507 0.597 ns 0.236 0.278 ns Read asynchronous reset recovery time (non-pipelined clock) TRSTREC Read asynchronous reset to output propagation delay (with pipelined register enabled) TR2Q Read synchronous reset setup time TSRSTSU 0.271 0.319 ns Read synchronous reset hold time TSRSTHD 0.061 0.071 ns Write clock period TCCY 4 4 ns Write clock minimum pulse width high TCCLKMPWH 1.8 1.8 ns Write clock minimum pulse width low TCCLKMPWL 1.8 1.8 ns Write block setup time TBLKCSU 0.404 0.476 ns Write block hold time TBLKCHD 0.007 0.008 ns Write input data setup time TDINCSU 0.101 0.118 ns Write input data hold time TDINCHD 0.137 0.161 ns Write address setup time TADDRCSU 0.088 0.104 ns 0.83 0.98 Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 ns 91 IGLOO2 FPGA and SmartFusion2 SoC FPGA Table 241 * SRAM (RAM256x4) in 256 x 4 Mode (continued) -1 Max -Std Parameter Symbol Min Min Max Write address hold time TADDRCHD 0.245 0.288 ns Write enable setup time TWECSU 0.397 0.467 ns Write enable hold time TWECHD -0.03 -0.03 ns Maximum frequency FMAX 250 250 Unit MHz The following table lists the SRAM in 512 x 2 mode in worst commercial-case conditions when TJ = 85 C, VDD = 1.14 V. Table 242 * SRAM (RAM512x2) in 512 x 2 Mode -1 Parameter Symbol Min Read clock period TCY 4 4 ns Read clock minimum pulse width high TCLKMPWH 1.8 1.8 ns Read clock minimum pulse width low TCLKMPWL 1.8 1.8 ns Read pipeline clock period TPLCY 4 4 ns Read pipeline clock minimum pulse width high TPLCLKMPWH 1.8 1.8 ns Read pipeline clock minimum pulse width low TPLCLKMPWL 1.8 1.8 ns Read access time with pipeline register Read access time without pipeline register Read address setup time in synchronous mode Read address setup time in asynchronous mode Read address hold time in synchronous mode Read address hold time in asynchronous mode TCLK2Q TADDRSU TADDRHD Max -Std Min Max Unit 0.27 0.31 ns 1.76 2.08 ns 0.301 0.354 ns 1.96 2.306 ns 0.137 0.161 ns -0.58 -0.68 ns Read enable setup time TRDENSU 0.278 0.327 ns Read enable hold time TRDENHD 0.057 0.067 ns Read block select setup time TBLKSU 1.839 2.163 ns Read block select hold time TBLKHD -0.65 -0.77 ns Read block select to out disable time (when pipelined register is disabled) TBLK2Q Read asynchronous reset removal time (pipelined clock) Read asynchronous reset removal time (non-pipelined clock) TRSTREM Read asynchronous reset recovery time (pipelined clock) Read asynchronous reset recovery time (non-pipelined clock) TRSTREC 2.14 2.52 ns -0.02 -0.03 ns 0.046 0.054 ns 0.507 0.597 ns 0.236 0.278 ns Read asynchronous reset to output propagation delay (with TR2Q pipelined register enabled) 0.83 0.98 ns Read synchronous reset setup time TSRSTSU 0.271 0.319 ns Read synchronous reset hold time TSRSTHD 0.061 0.071 ns Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 92 IGLOO2 FPGA and SmartFusion2 SoC FPGA Table 242 * SRAM (RAM512x2) in 512 x 2 Mode (continued) -1 Parameter Symbol Min -Std Max Min Max Unit Write clock period TCCY 4 4 ns Write clock minimum pulse width high TCCLKMPWH 1.8 1.8 ns Write clock minimum pulse width low TCCLKMPWL 1.8 1.8 ns Write block setup time TBLKCSU 0.404 0.476 ns Write block hold time TBLKCHD 0.007 0.008 ns Write input data setup time TDINCSU 0.101 0.118 ns Write input data hold time TDINCHD 0.137 0.161 ns Write address setup time TADDRCSU 0.088 0.104 ns Write address hold time TADDRCHD 0.247 0.29 ns Write enable setup time TWECSU 0.397 0.467 ns Write enable hold time TWECHD -0.03 Maximum frequency FMAX -0.03 ns 250 250 MHz The following table lists the SRAM in 1024 x 1 mode in worst commercial-case conditions when TJ = 85 C, VDD = 1.14 V. Table 243 * SRAM (RAM1024x1) in 1024 x 1 Mode -1 Parameter Symbol Min Read clock period TCY 4 4 ns Read clock minimum pulse width high TCLKMPWH 1.8 1.8 ns Read clock minimum pulse width low TCLKMPWL 1.8 1.8 ns Read pipeline clock period TPLCY 4 4 ns Read pipeline clock minimum pulse width high TPLCLKMPWH 1.8 1.8 ns Read pipeline clock minimum pulse width low TPLCLKMPWL 1.8 ns Read access time with pipeline register Read access time without pipeline register Read address setup time in synchronous mode Read address setup time in asynchronous mode Read address hold time in synchronous mode Read address hold time in asynchronous mode 1.8 TCLK2Q TADDRSU TADDRHD Max -Std Min Max Unit 0.27 0.31 ns 1.78 2.1 ns 0.301 0.354 ns 1.978 2.327 ns 0.137 0.161 ns -0.6 -0.71 ns Read enable setup time TRDENSU 0.278 0.327 ns Read enable hold time TRDENHD 0.057 0.067 ns Read block select setup time TBLKSU 1.839 2.163 ns Read block select hold time TBLKHD -0.65 -0.77 ns Read block select to out disable time (when pipelined register TBLK2Q is disabled) Read asynchronous reset removal time (pipelined clock) Read asynchronous reset removal time (non-pipelined clock) TRSTREM 2.16 2.54 ns -0.02 -0.03 ns 0.046 0.054 ns Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 93 IGLOO2 FPGA and SmartFusion2 SoC FPGA Table 243 * SRAM (RAM1024x1) in 1024 x 1 Mode (continued) -1 Parameter Symbol Read asynchronous reset recovery time (pipelined clock) Read asynchronous reset recovery time (non-pipelined clock) TRSTREC Min Max -Std Min Max Unit 0.507 0.597 ns 0.236 0.278 ns Read asynchronous reset to output propagation delay (with pipelined register enabled) TR2Q Read synchronous reset setup time TSRSTSU 0.271 0.319 ns Read synchronous reset hold time TSRSTHD 0.061 0.071 ns Write clock period TCCY 4 4 ns Write clock minimum pulse width high TCCLKMPWH 1.8 1.8 ns Write clock minimum pulse width low TCCLKMPWL 1.8 1.8 ns Write block setup time TBLKCSU 0.404 0.476 ns Write block hold time TBLKCHD 0.007 0.008 ns Write input data setup time TDINCSU 0.003 0.004 ns Write input data hold time TDINCHD 0.137 0.161 ns Write address setup time TADDRCSU 0.088 0.104 ns Write address hold time TADDRCHD 0.247 0.29 ns Write enable setup time TWECSU 0.397 0.467 ns Write enable hold time TWECHD -0.03 -0.03 ns Maximum frequency FMAX 2.3.13 0.83 0.98 250 250 ns MHz Programming Times The following tables list the programming times in typical conditions when TJ = 25 C, VDD = 1.2 V. External SPI flash part# AT25DF641-s3H is used during this measurement. Table 244 * JTAG Programming (Fabric Only) M2S/M2GL Device Image size Bytes Program Verify Unit 005 302672 22 10 Sec 010 568784 28 18 Sec 025 1223504 51 26 Sec 050 2424832 66 54 Sec 060 2418896 77 54 Sec 090 3645968 113 126 Sec 150 6139184 155 193 Sec Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 94 IGLOO2 FPGA and SmartFusion2 SoC FPGA Table 245 * JTAG Programming (eNVM Only) M2S/M2GL Device Image size Bytes Program Verify Unit 005 137536 39 4 Sec 010 274816 78 9 Sec 025 274816 78 9 Sec 050 278528 84 8 Sec 060 268480 76 8 Sec 090 544496 154 15 Sec 150 544496 155 15 Sec Table 246 * JTAG Programming (Fabric and eNVM) M2S/M2GL Device Image size Bytes Program Verify Unit 005 439296 59 11 Sec 010 842688 107 20 Sec 025 1497408 120 35 Sec 050 2695168 162 59 Sec 060 2686464 158 70 Sec 090 4190208 266 147 Sec 150 6682768 316 231 Sec Table 247 * 2 Step IAP Programming (Fabric Only) M2S/M2GL Device Image size Bytes Authenticate Program Verify Unit 005 302672 4 17 6 Sec 010 568784 7 23 12 Sec 025 1223504 14 33 23 Sec 050 2424832 29 52 40 Sec 060 2418896 39 61 50 Sec 090 3645968 60 84 73 Sec 150 6139184 100 132 120 Sec Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 95 IGLOO2 FPGA and SmartFusion2 SoC FPGA Table 248 * 2 Step IAP Programming (eNVM Only) M2S/M2GL Device Image size Bytes Authenticate Program Verify Unit 005 137536 2 37 5 Sec 010 274816 4 76 11 Sec 025 274816 4 78 10 Sec 050 278528 3 85 9 Sec 060 268480 5 76 22 Sec 090 544496 10 152 43 Sec 150 544496 10 153 44 Sec Table 249 * 2 Step IAP Programming (Fabric and eNVM) M2S/M2GL Device Image size Bytes Authenticate Program Verify Unit 005 439296 6 56 11 Sec 010 842688 11 100 21 Sec 025 1497408 19 113 32 Sec 050 2695168 32 136 48 Sec 060 2686464 43 137 70 Sec 090 4190208 68 236 115 Sec 150 6682768 109 286 162 Sec Table 250 * SmartFusion2 Cortex-M3 ISP Programming (Fabric Only) M2S/M2GL Device Image size Bytes Authenticate Program Verify Unit 005 302672 6 19 8 Sec 010 568784 10 26 14 Sec 025 1223504 21 39 29 Sec 050 2424832 39 60 50 Sec 060 2418896 44 65 54 Sec 090 3645968 66 90 79 Sec 150 6139184 108 140 128 Sec Table 251 * SmartFusion2 Cortex-M3 ISP Programming (eNVM Only) M2S/M2GL Device Image size Bytes Authenticate Program Verify Unit 005 137536 3 42 4 Sec 010 274816 4 82 7 Sec 025 274816 4 82 8 Sec 050 278528 4 80 8 Sec 060 268480 6 80 8 Sec 090 544496 10 157 15 Sec Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 96 IGLOO2 FPGA and SmartFusion2 SoC FPGA Table 251 * SmartFusion2 Cortex-M3 ISP Programming (eNVM Only) (continued) M2S/M2GL Device Image size Bytes Authenticate Program Verify Unit 150 544496 10 158 15 Sec Table 252 * SmartFusion2 Cortex-M3 ISP Programming (Fabric and eNVM) M2S/M2GL Device Image size Bytes Authenticate Program Verify Unit 005 439296 9 61 11 Sec 010 842688 15 107 21 Sec 025 1497408 26 121 35 Sec 050 2695168 43 141 55 Sec 060 2686464 48 143 60 Sec 090 4190208 75 244 91 Sec 150 6682768 117 296 141 Sec Table 253 * Programming Times with 100 kHz, 25 MHz, and 12.5 MHz SPI Clock Rates (Fabric Only) Auto Programming Auto Update Programming Recovery 100 kHz 25 MHz 12.5 MHz Unit 005 47 27 28 Sec 010 77 35 35 Sec 025 150 42 41 Sec 050 331 Not Supported Not Supported M2S/M2GL Device Sec 060 291 83 82 Sec 090 427 109 108 Sec 150 708 157 160 Sec 1. Auto Programming in 050 device is done through SC_SPI, and SPI CLK is set to 6.25 MHz. Table 254 * Programming Times with 100 kHz, 25 MHz, and 12.5 MHz SPI Clock Rates (eNVM Only) Auto Programming Auto Update Programming Recovery 100 kHz 25 MHz 12.5 MHz Unit 005 41 48 49 Sec 010 86 87 87 Sec 025 87 85 86 Sec 050 85 Not Supported Not Supported Sec 060 78 86 86 Sec 090 154 162 162 Sec M2S/M2GL Device Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 97 IGLOO2 FPGA and SmartFusion2 SoC FPGA Table 254 * Programming Times with 100 kHz, 25 MHz, and 12.5 MHz SPI Clock Rates (eNVM Only) (continued) M2S/M2GL Device 150 Auto Programming Auto Update Programming Recovery 100 kHz 25 MHz 12.5 MHz Unit 161 161 161 Sec Table 255 * Programming Times with 100 kHz, 25 MHz, and 12.5 MHz SPI Clock Rates (Fabric and eNVM) Auto Programming Auto Update Programming Recovery 100 kHz 25 MHz 12.5 MHz Unit 005 47 27 28 Sec 010 77 35 35 Sec 025 150 42 41 Sec 050 331 Not Supported Not Supported Sec 060 291 83 82 Sec 090 427 109 108 Sec 150 708 157 160 Sec 005 41 48 49 Sec 010 86 87 87 Sec 025 87 85 86 Sec 050 85 Not Supported Not Supported Sec 060 78 86 86 Sec 090 154 162 162 Sec 150 161 161 161 Sec 005 87 67 66 Sec 010 161 113 113 Sec 025 229 120 121 Sec 050 112 Not Supported Not Supported Sec 060 368 161 158 Sec 090 582 261 260 Sec 150 867 309 310 Sec M2S/M2GL Device 1. Auto Programming in 050 device is done through SC_SPI, and SPI CLK is set to 6.25 MHz. Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 98 IGLOO2 FPGA and SmartFusion2 SoC FPGA The following table lists the programming times in worst-case conditions when TJ = 100 C, VDD = 1.14 V. External SPI flash part# AT25DF641-s3H is used during this measurement. Table 256 * JTAG Programming (Fabric Only) M2S/M2GL Device Image size Bytes Program Verify Unit 005 302672 44 10 Sec 010 568784 50 18 Sec 025 1223504 73 26 Sec 050 2424832 88 54 Sec 060 2418896 99 54 Sec 090 3645968 135 126 Sec 150 6139184 177 193 Sec Table 257 * JTAG Programming (eNVM Only) M2S/M2GL Device Image size Bytes 005 137536 61 4 Sec 010 274816 100 9 Sec 025 274816 100 9 Sec 050 2,78,528 106 8 Sec 060 268480 98 8 Sec 090 544496 176 15 Sec 150 544496 177 15 Sec Program Verify Unit Table 258 * JTAG Programming (Fabric and eNVM) M2S/M2GL Device Image size Bytes Program Verify Unit 005 439296 71 11 Sec 010 842688 129 20 Sec 025 1497408 142 35 Sec 050 2695168 184 59 Sec 060 2686464 180 70 Sec 090 4190208 288 147 Sec 150 6682768 338 231 Sec Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 99 IGLOO2 FPGA and SmartFusion2 SoC FPGA Table 259 * 2 Step IAP Programming (Fabric Only) Image size M2S/M2GL Device Bytes Authenticate Program Verify Unit 005 302672 4 39 6 Sec 010 568784 7 45 12 Sec 025 1223504 14 55 23 Sec 050 2424832 29 74 40 Sec 060 2418896 39 83 50 Sec 090 3645968 60 106 73 Sec 150 6139184 100 154 120 Sec Table 260 * 2 Step IAP Programming (eNVM Only) Image size M2S/M2GL Device Bytes Authenticate Program Verify Unit 005 137536 2 59 5 Sec 010 274816 4 98 11 Sec 025 274816 4 100 10 Sec 050 2,78,528 3 107 9 Sec 060 268480 5 98 22 Sec 090 544496 10 174 43 Sec 150 544496 10 175 44 Sec Table 261 * 2 Step IAP Programming (Fabric and eNVM) Image size M2S/M2GL Device Bytes Authenticate Program Verify Unit 005 439296 6 78 11 Sec 010 842688 11 122 21 Sec 025 1497408 19 135 32 Sec 050 2695168 32 158 48 Sec 060 2686464 43 159 70 Sec 090 4190208 68 258 115 Sec 150 6682768 109 308 162 Sec Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 100 IGLOO2 FPGA and SmartFusion2 SoC FPGA Table 262 * SmartFusion2 Cortex-M3 ISP Programming (Fabric Only) M2S/M2GL Device Image size Bytes Authenticate Program Verify Unit 005 302672 6 41 8 Sec 010 568784 10 48 14 Sec 025 1223504 21 61 29 Sec 050 2424832 39 82 50 Sec 060 2418896 44 87 54 Sec 090 3645968 66 112 79 Sec 150 6139184 108 162 128 Sec Table 263 * SmartFusion2 Cortex-M3 ISP Programming (eNVM Only) M2S/M2GL Device Image size Bytes Authenticate Program Verify Unit 005 137536 3 64 4 Sec 010 274816 4 104 7 Sec 025 274816 4 104 8 Sec 050 2,78,528 4 102 8 Sec 060 268480 6 102 8 Sec 090 544496 10 179 15 Sec 150 544496 10 180 15 Sec Table 264 * SmartFusion2 Cortex-M3 ISP Programming (Fabric and eNVM) M2S/M2GL Device Image size Bytes Authenticate Program Verify Unit 005 439296 9 83 11 Sec 010 842688 15 129 21 Sec 025 1497408 26 143 35 Sec 050 2695168 43 163 55 Sec 060 2686464 48 165 60 Sec 090 4190208 75 266 91 Sec 150 6682768 117 318 141 Sec Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 101 IGLOO2 FPGA and SmartFusion2 SoC FPGA Table 265 * Programming Times with 100 kHz, 25 MHz. and 12.5 MHz SPI Clock Rates (Fabric Only) Auto Programming Auto Update Programming Recovery M2S/M2GL Device 100 kHz 25 MHz 12.5 MHz Unit 005 69 49 50 Sec 010 99 57 57 Sec 025 150 64 63 Sec 050 551 Not Supported Not Supported Sec 060 313 105 104 Sec 090 449 131 130 Sec 150 730 179 183 Sec 1. Auto programming in 050 device is done through SC_SPI, and SPI CLK is set to 6.25 MHz. Table 266 * Programming Times with 100 kHz, 25 MHz. and 12.5 MHz SPI Clock Rates (eNVM Only) Auto Programming Auto Update Programming Recovery M2S/M2GL Device 100 kHz 25 MHz 12.5 MHz Unit 005 63 70 71 Sec 010 108 109 109 Sec 025 109 107 108 Sec 050 107 Not Supported Not Supported Sec 060 100 108 108 Sec 090 176 184 184 Sec 150 183 183 183 Sec Table 267 * Programming Times with 100 kHz, 25 MHz. and 12.5 MHz SPI Clock Rates (Fabric and eNVM) Auto Programming Auto Update Programming Recovery M2S/M2GL Device 100 kHz 25 MHz 12.5 MHz Unit 005 109 89 88 Sec 010 183 135 135 Sec 025 251 142 143 Sec 050 134 Not Supported Not Supported Sec 060 390 183 180 Sec 090 604 283 282 Sec 150 889 331 332 Sec Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 102 IGLOO2 FPGA and SmartFusion2 SoC FPGA 2.3.14 Math Block Timing Characteristics The fundamental building block in any digital signal processing algorithm is the multiply-accumulate function. Each IGLOO2 and SmartFusion2 SoC math block supports 18x18 signed multiplication, dot product, and built-in addition, subtraction, and accumulation units to combine multiplication results efficiently. The following table lists the math blocks with all registers used in worst commercial-case conditions when TJ = 85 C, VDD = 1.14 V. Table 268 * Math Blocks with all Registers Used -1 -Std Parameter Symbol Min Max Min Max Input, control register setup time TMISU 0.149 0.176 ns Input, control register hold time TMIHD 1.68 1.976 ns CDIN input setup time TMOCDINSU 0.185 0.218 ns CDIN input hold time TMOCDINHD 0.08 0.094 ns Synchronous reset/enable setup time TMSRSTENSU -0.419 -0.493 ns Synchronous reset/enable hold time TMSRSTENHD 0.011 0.013 ns Asynchronous reset removal time TMARSTREM 0 0 ns Asynchronous reset recovery time TMARSTREC 0.088 0.104 ns Output register clock to out delay TMOCQ CLK minimum period TMCLKMP 0.232 2.245 Unit 0.273 ns 2.641 ns The following table lists the math blocks with input bypassed and output registers used in worst commercial-case conditions when TJ = 85 C, VDD = 1.14 V. Table 269 * Math Block with Input Bypassed and Output Registers Used -1 Max -Std Parameter Symbol Min Min Output register setup time TMOSU 2.294 2.699 ns Output register hold time TMOHD 1.68 1.976 ns CDIN input setup time TMOCDINSU 0.115 0.136 ns CDIN input hold time TMOCDINHD -0.444 -0.522 ns Synchronous reset/enable setup time TMSRSTENSU -0.419 -0.493 ns Synchronous reset/enable hold time TMSRSTENHD 0.011 0.013 ns Asynchronous reset removal time TMARSTREM 0 0 ns Asynchronous reset recovery time TMARSTREC 0.014 0.017 ns Output register clock to out delay TMOCQ CLK minimum period TMCLKMP 0.232 2.179 Max Unit 0.273 ns 2.563 Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 ns 103 IGLOO2 FPGA and SmartFusion2 SoC FPGA The following table lists the math blocks with input register used and output in bypass mode in worst commercial-case conditions when TJ = 85 C, VDD = 1.14 V. Table 270 * Math Block with Input Register Used and Output in Bypass Mode -1 -Std Parameter Symbol Min Max Min Max Unit Input register setup time TMISU 0.149 0.176 ns Input register hold time TMIHD 0.185 0.218 ns Synchronous reset/enable setup time TMSRSTENSU 0.08 0.094 ns Synchronous reset/enable hold time TMSRSTENHD -0.012 -0.014 ns Asynchronous reset removal time TMARSTREM -0.005 -0.005 ns Asynchronous reset recovery time TMARSTREC 0.088 Input register clock to output delay TMICQ 2.52 2.964 ns CDIN to output delay TMCDIN2Q 1.951 2.295 ns 0.104 ns The following table lists the math blocks with input and output in bypass mode in worst commercial-case conditions when TJ = 85 C, VDD = 1.14 V. Table 271 * Math Block with Input and Output in Bypass Mode 2.3.15 -1 -Std Parameter Symbol Max Max Unit Input to output delay TMIQ 2.568 3.022 ns CDIN to output delay TMCDIN2Q 1.951 2.295 ns Embedded NVM (eNVM) Characteristics The following table lists the eNVM read performance in worst-case conditions when VDD = 1.14 V, VPPNVM = VPP = 2.375 V. Table 272 * eNVM Read Performance Operating Temperature Range Symbol Description TJ Junction temperature range FMAXREAD eNVM maximum read frequency -1 -Std -55 C to 125 C 25 25 -1 -Std -40 C to 100 C 25 25 -1 -Std 0 C to 85 C 25 25 Unit C MHz The following table lists the eNVM page programming in worst-case conditions when VDD = 1.14 V, VPPNVM = VPP = 2.375 V. Table 273 * eNVM Page Programming Operating Temperature Range Symbol Description TJ Junction temperature range TPAGEPGM eNVM page programming time -1 -Std -55 C to 125 C 40 40 -1 -Std -40 C to 100 C 40 40 -1 -Std Unit 0 C to 85 C 40 Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 40 C ms 104 IGLOO2 FPGA and SmartFusion2 SoC FPGA 2.3.16 SRAM PUF For more details on static random-access memory (SRAM) physical unclonable functions (PUF) services, see AC434: Using SRAM PUF System Service in SmartFusion2 Application Note. The following table lists the SRAM PUF in worst-case industrial conditions when TJ = 100 C, VDD = 1.14 V. Table 274 * SRAM PUF PUF Off PUF On Service Typ Max Typ Max Unit Create activation code 709.1 746.4 754.4 762.5 ms Delete activation code 1329.3 1399.3 1414.1 1429.3 ms Create intrinsic keycode 656.6 691.1 698.5 706.0 ms Create extrinsic keycode 656.6 691.1 698.5 706.0 ms Get number of keys 1.3 1.4 1.4 1.4 ms Export (Kc0, Kc1) 998.0 1050.5 1061.7 1073.1 ms Export 2 keycodes 2020.2 2126.5 2149.2 2172.3 ms Export 4 keycodes 3065.7 3227.0 3261.3 3296.4 ms Export 8 keycodes 5101.0 5369.5 5426.6 5485.0 ms Export 16 keycodes 9212.1 9697.0 9800.1 9905.5 ms Import (Kc0, Kc1) 39.7 41.8 42.2 42.7 ms Import 2 keycodes 50.1 52.7 53.3 53.9 ms Import 4 keycodes 60.6 63.8 64.5 65.2 ms Import 8 keycodes 80.9 85.1 86.1 87.0 ms Import 16 keycodes 123.8 130.4 131.7 133.2 ms Delete keycode 552.5 581.6 587.8 594.1 ms Fetch key 31.4 33.0 33.4 33.7 ms Fetch ecc key 20.0 21.1 21.3 21.5 ms Get seed 2.0 2.1 2.2 2.2 ms Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 105 IGLOO2 FPGA and SmartFusion2 SoC FPGA 2.3.17 Non-Deterministic Random Bit Generator (NRBG) Characteristics For more information about NRBG, see AC407: Using NRBG Services in SmartFusion2 and IGLOO2 Devices Application Note. The following table lists the NRBG in worst-case industrial conditions when TJ = 100 C, VDD = 1.14 V. Table 275 * Non-Deterministic Random Bit Generator (NRBG) Conditions Service Timing Unit Prediction Resistance Additional Input Instantiate 85 ms OFF X Generate 4.5 ms + (6.25 us/byte x No. of Bytes) (after Instantiate)1 6.0 ms + (6.25 us/byte x No. of Bytes) OFF 0 OFF 64 7.0 ms + (6.25 us/byte x No. of Bytes) OFF 128 ON X Generate (after Instantiate) 47 Generate (subsequent)1 0.5 ms + (6.25 us/byte x No. of Bytes) OFF 0 2.0 ms + (6.25 us/byte x No. of Bytes) OFF 64 3.0 ms + (6.25 us/byte x No. of Bytes) OFF 128 ON X Generate (subsequent) 43 ms Reseed 40 ms Uninstantiate 0.16 ms Reset 0.10 ms Self test 20 ms First time after power-up 6 ms Subsequent 1. 2.3.18 ms If PUF_OFF, generate will incur additional PUF delay time for consecutive service calls. Cryptographic Block Characteristics For more information about cryptographic block and associated services, see AC410: Using AES System Services in SmartFusion2 and IGLOO2 Devices Application Note and AC432: Using SHA-256 System Services in SmartFusion2 and IGLOO2 Devices Application Note. The following table lists the cryptographic block characteristics in worst-case industrial conditions when TJ = 100 C, VDD = 1.14 V. Table 276 * Cryptographic Block Characteristics Service Conditions Timing Any service First certificate check penalty at boot 11.5 ms AES128/256 (encoding / decoding)1 100 blocks up to 64k blocks kbps 700 Unit Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 106 IGLOO2 FPGA and SmartFusion2 SoC FPGA Table 276 * Cryptographic Block Characteristics (continued) Service Conditions Timing Unit SHA256 512 bits 540 kbps 1024 bits 780 kbps 2048 bits 950 kbps 24 kbits 1140 kbps 512 bytes 820 kbps 1024 bytes 890 kbps 2048 bytes 930 kbps 24 kbytes 980 kbps 1.8 ms PUF = OFF 25 ms PUF = ON 7 ms ECC point multiplication 590 ms ECC point addition 8 ms HMAC KeyTree Challenge-response 1. 2.3.19 Using cypher block chaining (CBC) mode. Crystal Oscillator The following table describes the electrical characteristics of the crystal oscillator in the IGLOO2 FPGA and SmartFusion2 SoC FPGAs. Table 277 * Electrical Characteristics of the Crystal Oscillator - High Gain Mode (20 MHz) Parameter Symbol Operating frequency FXTAL Accuracy ACCXTAL Min Typ Max 20 Unit Condition MHz 0.0047 % 005, 010, 025, 050, 060, and 090 devices 0.0058 % 150 devices Output duty cycle CYCXTAL 49-51 47-53 % Output period jitter (peak to peak) JITPERXTAL 200 300 ps Output cycle to cycle jitter (peak JITCYCXTAL to peak) 200 300 ps 010, 025, 050, and 060 devices 250 410 ps 150 devices 250 550 ps 005 and 090 devices 1.5 mA 010, 050, and 060 devices 1.65 mA 005, 025, 090, and 150 devices Operating current IDYNXTAL Input logic level high VIHXTAL Input logic level low VILXTAL 0.9 VPP V 0.1 VPP V Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 107 IGLOO2 FPGA and SmartFusion2 SoC FPGA Table 277 * Electrical Characteristics of the Crystal Oscillator - High Gain Mode (20 MHz) (continued) Parameter Symbol Startup time (with regard to stable oscillator output) SUXTAL Min Typ Max Unit Condition 0.8 ms 005, 010, 025, and 050 devices 1.0 ms 090 and 150 devices Table 278 * Electrical Characteristics of the Crystal Oscillator - Medium Gain Mode (2 MHz) Parameter Symbol Operating frequency FXTAL Accuracy ACCXTAL Min Typ Max 2 Unit Condition MHz 0.00105 % 050 devices 0.003 % 005, 010, 025, 090, and 150 devices 0.004 % 060 devices Output duty cycle CYCXTAL 49-51 47-53 % Output period jitter (peak to peak) JITPERXTAL 1 5 ns Output cycle to cycle jitter (peak JITCYCXTAL to peak) 1 5 ns Operating current IDYNXTAL 0.3 Input logic level high VIHXTAL Input logic level low VILXTAL 0.1 VPP V Startup time (with regard to stable oscillator output) SUXTAL 4.5 ms 010 and 050 devices 5 ms 005 and 025 devices 7 ms 090 and 150 devices mA 0.9 VPP V Table 279 * Electrical Characteristics of the Crystal Oscillator - Low Gain Mode (32 kHz) Parameter Symbol Operating frequency FXTAL Accuracy ACCXTAL Min Typ Max 32 Unit Condition kHz 0.004 % 005, 010, 025, 050, 060, and 090 devices 0.005 % 150 devices 49-51 47-53 % Output period jitter (peak to peak) JITPERXTAL 150 300 ns Output cycle to cycle jitter (peak to JITCYCXTAL peak) 150 300 ns Operating current 0.044 mA 010 and 050 devices 0.060 mA 005, 025, 060, 090, and 150 devices Output duty cycle CYCXTAL IDYNXTAL Input logic level high VIHXTAL Input logic level low VILXTAL Startup time (with regard to stable SUXTAL oscillator output) 0.9 VPP V 0.1 VPP V 115 ms 005, 025, 050, 090, and 150 devices 126 ms 010 devices Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 108 IGLOO2 FPGA and SmartFusion2 SoC FPGA 2.3.20 On-Chip Oscillator The following tables describe the electrical characteristics of the available on-chip oscillators in the IGLOO2 FPGAs and SmartFusion2 SoC FPGAs. Table 280 * Electrical Characteristics of the 50 MHz RC Oscillator Parameter Symbol Typ Operating frequency F50RC 50 Accuracy ACC50RC 1 4 % 050 devices 1 5 % 005, 025, and 060 devices 1 6.3 % 090 devices 010 and 150 devices Output duty cycle CYC50RC Output jitter (peak to peak) JIT50RC Max Unit Condition MHz 1 7.1 % 49-51 46.5-53.5 % Period Jitter 200 300 ps 005, 010, 050, and 060 devices 200 400 ps 150 devices 300 500 ps 025 and 090 devices 200 300 ps 005 and 050 devices 320 420 ps 010, 060, and 150 devices 320 850 ps 025 and 090 devices Cycle-to-Cycle Jitter Operating current IDYN50RC 6.5 mA Table 281 * Electrical Characteristics of the 1 MHz RC Oscillator Parameter Symbol Typ Operating frequency F1RC 1 Accuracy ACC1RC 1 3 % 005, 010, 025, and 050 devices 1 4.5 % 060, and 150 devices 1 5.6 % 090 devices 49-51 46.5-53.5 % 005, 010, 025, 050, 090 and 150 devices 49-51 46.0-54.0 % 060 devices Output duty cycle CYC1RC Max Unit Condition MHz Output jitter (peak to peak) JIT1RC Period Jitter 10 20 ns 005, 010, 025, and 050 devices 10 28 ns 060, 090 and 150 devices Cycle-to-Cycle Jitter Operating current IDYN1RC Startup time SU1RC 10 20 ns 005, 010, and 050 devices 10 35 ns 025, 060, and 150 devices 10 45 ns 090 devices 0.1 mA 17 s 050, 090, and 150 devices 18 s 005, 010, and 025 devices Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 109 IGLOO2 FPGA and SmartFusion2 SoC FPGA 2.3.21 Clock Conditioning Circuits (CCC) The following table lists the CCC/PLL specifications in worst-case industrial conditions when TJ = 100 C, VDD = 1.14 V. Table 282 * IGLOO2 and SmartFusion2 SoC FPGAs CCC/PLL Specification Parameter Min Clock conditioning circuitry input frequency FIN_CCC 1 0.032 Clock conditioning circuitry output frequency FOUT_CCC1 0.078 PLL VCO frequency2 500 1000 MHz 100 ps Delay increments in programmable delay blocks Typ 75 Number of programmable values in each programmable delay block Max Unit Conditions 200 MHz All CCC 200 MHz 32 kHz capable CCC 400 MHz 64 Acquisition time 70 100 s FIN >= 1 MHz 1 16 ms FIN = 32 kHz Input duty cycle (reference clock) Internal Feedback 10 90 % 1 MHz FIN_CCC 25 MHz 25 75 % 25 MHz FIN_CCC 100 MHz 35 65 % 100 MHz FIN_CCC 150 MHz 45 55 % 150 MHz FIN_CCC 200 MHz External Feedback (CCC, FPGA, Off-chip) Output duty cycle 25 75 % 1 MHz FIN_CCC 25 MHz 35 65 % 25 MHz FIN_CCC 35 MHz 45 55 % 35 MHz FIN_CCC 50 MHz 48 52 % 050 devices FOUT 400 MHz 48 52 % 005, 010, and 025 devices FOUT < 350 MHz 46 54 % 005, 010, and 025 devices 350 MHz Fout 400 MHz 48 52 % 060 and 090 devices FOUT 100 MHz 44 52 % 060 and 090 devices 100 MHz FOUT 400 MHz 48 52 % 150 devices FOUT 120 MHz 45 52 % 150 devices 120 MHz FOUT 400 MHz 50 k 1.5 % Spread Spectrum Characteristics Modulation frequency range 25 Modulation depth range 0 Modulation depth control 35 0.5 % Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 110 IGLOO2 FPGA and SmartFusion2 SoC FPGA 1. 2. The minimum output clock frequency is limited by the PLL. For more information, see UG0449: SmartFusion2 and IGLOO2 Clocking Resources User Guide. The PLL is used in conjunction with the Clock Conditioning Circuitry. Performance is limited by the CCC output frequency. The following table lists the CCC/PLL jitter specifications in worst-case industrial conditions when TJ = 100 C, VDD = 1.14 V. Table 283 * IGLOO2 and SmartFusion2 SoC FPGAs CCC/PLL Jitter Specifications CCC Output Maximum Peak-to-Peak Period Jitter FOUT_CCC Parameter Conditions/Package Combinations Unit 10 FG484, 050 SSO = 0 FG896/FG484/FCS325 Packages1 0 < SSO <= 2 20 MHz to 100 MHz Max(110, 1% x (1/FOUT_CCC)) Max(150, 1% x (1/FOUT_CCC)) 100 MHz to 400 MHz Max(120, 1% x (1/FOUT_CCC)) Max(150, 1% x (1/FOUT_CCC)) 025 FG484/FCS325 Package1 0 < SSO <=16 20 MHz to 74 MHz 1% x (1/FOUT_CCC)) ps 74 MHz to 400 MHz 210 ps 005 FG484 Package1 SSO <= 4 SSO <= 8 SSO <= 16 ps Max(170, 1% x (1/FOUT_CCC)) ps 0 < SSO <=16 20 MHz to 53 MHz 1% x (1/FOUT_CCC)) ps 53 MHz to 400 MHz 270 ps 090 FG676 and FC325 0 < SSO <=16 Package1 20 MHz to 100 MHz 1% x (1/FOUT_CCC)) ps 100 MHz to 400 MHz 150 ps 060 FG676 Package1 0 < SSO <=16 20 MHz to 100 MHz 1% x (1/FOUT_CCC) 100 MHz to 400 MHz 150 150 FC1152 Package1 ps 0 < SSO <=16 20 MHz to 100 MHz 1% x (1/FOUT_CCC)) ps 100 MHz to 400 MHz 120 ps 1. SSO data is based on LVCMOS 2.5 V MSIO and/or MSIOD bank I/Os. 2.3.22 JTAG Table 284 * JTAG 1532 for 005, 010, 025, and 050 Devices 005 010 025 Unit 050 Parameter Symbol -1 -Std -1 -Std -1 -Std -1 -Std Clock to Q (data out) TTCK2Q 7.47 8.79 7.73 9.09 7.75 9.12 7.89 9.28 ns Reset to Q (data out) TRSTB2Q 7.65 9 6.43 7.56 6.13 7.21 7.40 8.70 ns Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 111 IGLOO2 FPGA and SmartFusion2 SoC FPGA Table 284 * JTAG 1532 for 005, 010, 025, and 050 Devices (continued) 005 Parameter Symbol 010 025 Unit 050 -1 -Std -1 -Std -1 -Std -1 -Std Test data input TDISU setup time -1.05 -0.89 -0.69 -0.59 -0.67 -0.57 -0.30 -0.25 ns Test data input TDIHD hold time 2.38 2.8 2.38 2.8 2.42 2.85 2.09 2.45 ns Test mode select setup time TTMSSU -0.73 -0.62 -1.03 -1.21 -1.1 -0.94 0.28 0.33 ns Test mode select hold time TTMDHD 1.36 1.6 1.43 1.68 1.93 2.27 0.16 0.19 ns ResetB removal time TTRSTREM -0.77 -0.65 -1.08 -0.92 -1.33 -1.13 -0.45 -0.38 ns -0.76 -0.65 -1.07 -0.91 -1.34 -1.14 -0.45 -0.38 ns 25 21.25 25 21.25 25 21.25 25.00 21.25 MHz ResetB TTRSTREC recovery time TCK maximum frequency FTCKMAX Table 285 * JTAG 1532 for 060, 090, and 150 Devices 060 090 150 Parameter Symbol -1 -Std -1 -Std -1 -Std Unit Clock to Q (data out) TTCK2Q 8.38 9.86 8.96 10.54 8.66 10.19 ns Reset to Q (data out) TRSTB2Q 8.54 10.04 7.75 9.12 8.79 10.34 ns Test data input setup time TDISU -1.18 -1 -1.31 -1.11 -0.96 -0.82 Test data input hold time TDIHD 2.52 2.97 2.68 3.15 2.57 3.02 Test mode select setup TTMSSU time -0.97 -0.83 -1.02 -0.87 -0.53 -0.45 Test mode select hold time TTMDHD 1.7 2 1.67 1.96 1.02 1.2 ResetB removal time TTRSTREM -1.21 -1.03 -0.76 -0.65 -1.03 -0.88 ns ResetB recovery time TTRSTREC -1.21 -1.03 -0.77 -0.65 -1.03 -0.88 ns TCK maximum frequency FTCKMAX 25 21.25 25 21.25 25 21.25 Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 ns ns ns ns MHz 112 IGLOO2 FPGA and SmartFusion2 SoC FPGA 2.3.23 System Controller SPI Characteristics The following table lists the system controller characteristics in worst-case industrial conditions when TJ = 100 C, VDD = 1.14 V. Table 286 * System Controller SPI Characteristics for All Devices Symbol Description sp1 SC_SPI_SCK minimum period 20 ns sp2 SC_SPI_SCK minimum pulse width high 10 ns sp3 SC_SPI_SCK minimum pulse width low 10 ns sp41 SC_SPI_SCK, SC_SPI_SDO, SC_SPI_SS rise time (10%-90%) 1 I/O configuration: LVTTL 3.3 V- 20 mA AC loading: 35 pF Test conditions: Typical voltage, 25 C 1.239 ns sp51 SC_SPI_SCK, SC_SPI_SDO, SC_SPI_SS fall time (10%-90%) 1 I/O configuration: LVTTL 3.3 V- 20 mA AC loading: 35 pF Test conditions: Typical voltage, 25 C 1.245 ns sp6 SC_SPI_SDO setup time 160 ns sp7 SC_SPI_SDO hold time 160 ns sp8 SC_SPI_SDI setup time 20 ns sp9 SC_SPI_SDI hold time 20 ns 1. Conditions Min Typ Unit For specific Rise/Fall Times, board design considerations and detailed output buffer resistances, use the corresponding IBIS models located on the Microsemi SoC Products Group website: http://www.microsemi.com/soc/download/ibis/default.aspx. Use the supported I/O Configurations for the System Controller SPI in the following table. Table 287 * Supported I/O Configurations for System Controller SPI (for MSIO Bank Only) Voltage Supply I/O Drive Configuration Unit 3.3 V 20 mA 2.5 V 16 mA 1.8 V 12 mA 1.5 V 8 mA 1.2 V 4 mA Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 113 IGLOO2 FPGA and SmartFusion2 SoC FPGA 2.3.24 Power-up to Functional Times The following table lists power-up to functional times in worst-case industrial conditions when TJ = 100 C, VDD = 1.14 V. Table 288 * Power-up to Functional Times When MSS/HPMS is Used Maximum Power-up to Functional Time (uS) Symbol From To 010 025 050 060 090 150 TPOR2OUT POWER_ON Output Fabric to _RESET_N available at output I/O 647 500 531 483 474 524 647 TPOR2MSSRST POWER_ON MSS_RESE Fabric to _RESET_N T_N_M2F MSS 644 497 528 480 468 518 641 TMSSRST2OUT MSS_RESET Output MSS to _N_M2F available at output I/O 3.6 3.6 3.6 3.4 4.9 4.8 4.8 TVDD2OUT VDD Output VDD at its available at minimum I/O threshold level to output 3096 2975 3012 2959 2869 2992 3225 TVDD2POR VDD POWER_O VDD at its N_RESET_ minimum N threshold level to fabric 2476 2487 2496 2486 2406 2563 2602 MSS_RESE VDD at its 3093 T_N_M2F minimum threshold level to MSS 2972 3008 2956 2864 2987 3220 DEVRST_N DDRIO Inbuf weak pull DEVRST_N 2500 to Inbuf weak pull 2487 2509 2475 2507 2519 2617 DEVRST_N MSIO Inbuf DEVRST_N 2504 weak pull to Inbuf weak pull 2491 2510 2478 2517 2525 2620 DEVRST_N MSIOD Inbuf weak pull 2468 2493 2458 2486 2499 2595 TVDD2MSSRST VDD TVDD2WPU Description 005 DEVRST_N 2479 to Inbuf weak pull Note: For more information about power-up times, see UG0331: SmartFusion2 Microcontroller Subsystem User Guide and UG0448: IGLOO2 FPGA High Performance Memory Subsystem User Guide. Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 114 IGLOO2 FPGA and SmartFusion2 SoC FPGA Figure 17 * Power-up to Functional Timing Diagram for SmartFusion2 '(9567B1 9339'',[ 9'' 5&26&B0+] 7ULVWDWH ,1%8) +LJK= 79'':38 ,1%8):($.38// 06,206,2'''5,2 79''325 7325066567 32:(5B21B5(6(7B1 7066567287 79''066567 066B5(6(7B1B0) 7325287 79''287 7ULVWDWH +LJK= 287%8) The following table lists power-up to functional times in worst-case industrial conditions when TJ = 100 C, VDD = 1.14 V. Table 289 * Power-up to Functional Times When MSS/HPMS is not Used Maximum Power-up to Functional Time (uS) Symbol From TPOR2OUT To Description 005 010 025 050 060 090 150 POWER_ON Output _RESET_N available at I/O Fabric to output 114 114 114 113 114 114 114 TVDD2OUT VDD Output available at I/O VDD at its minimum threshold level to output 2587 2600 2607 2558 2591 2600 2699 TVDD2POR VDD POWER_ON_ VDD at its RESET_N minimum threshold level to fabric 2474 2486 2493 2445 2477 2486 2585 DDRIO Inbuf weak pull DEVRST_N to 2500 Inbuf weak pull 2487 2509 2475 2507 2519 2617 DEVRST_N MSIO Inbuf weak pull DEVRST_N to 2504 Inbuf weak pull 2491 2510 2478 2517 2525 2620 DEVRST_N MSIOD Inbuf weak pull DEVRST_N to 2479 Inbuf weak pull 2468 2493 2458 2486 2499 2595 TVDD2WPU DEVRST_N Note: For more information about power-up times, see UG0448: IGLOO2 FPGA High Performance Memory Subsystem User Guide and UG0331: SmartFusion2 Microcontroller Subsystem User Guide. Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 115 IGLOO2 FPGA and SmartFusion2 SoC FPGA Figure 18 * Power-up to Functional Timing Diagram for IGLOO2 '(9567B1 9339'',[ 9'' 5&26&B0+] ,1%8) 7ULVWDWH +LJK= 79'':38 ,1%8):($.38// 06,206,2'''5,2 79''325 32:(5B21B5(6(7B1 7325287 79''287 287%8) 2.3.25 7ULVWDWH +LJK= DEVRST_N Characteristics Table 290 * DEVRST_N Characteristics for All Devices 2.3.26 Parameter Symbol Max Unit DEVRST_N ramp time TRAMPDEVRSTN 1 us DEVRST_N cycling rate FMAXPDEVRSTN 100 kHz DEVRST_N to Functional Times The following table lists the DEVRST_N to functional times in worst-case industrial conditions when TJ = 100 C, VDD = 1.14 V. Table 291 * DEVRST_N to Functional Times When MSS/HPMS is Used Maximum Power-up to Functional Time (uS) Symbol From To Description 005 010 025 050 060 090 150 TPOR2OUT POWER_ON Output Fabric to _RESET_N available at output I/O 518 501 527 521 422 419 694 TPOR2MSSRST POWER_ON MSS_RESE Fabric to _RESET_N T_N_M2F MSS 515 497 524 518 417 414 689 TMSSRST2OUT MSS_RESET Output MSS to _N_M2F available at output I/O 3.5 3.5 3.5 3.3 4.8 4.8 4.8 TDEVRST2OUT DEVRST_N 706 768 715 691 641 635 871 Output VDD at its available at minimum I/O threshold level to output Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 116 IGLOO2 FPGA and SmartFusion2 SoC FPGA Table 291 * DEVRST_N to Functional Times When MSS/HPMS is Used (continued) Maximum Power-up to Functional Time (uS) Symbol From To 010 025 050 060 090 150 TDEVRST2POR DEVRST_N POWER_O VDD at its N_RESET_ minimum N threshold level to fabric 233 289 216 213 237 234 219 MSS_RESE VDD at its 702 T_N_M2F minimum threshold level to MSS 765 712 688 636 630 866 DEVRST_N DDRIO Inbuf weak pull DEVRST_N 208 to Inbuf weak pull 202 197 193 216 215 215 DEVRST_N MSIO Inbuf DEVRST_N 208 weak pull to Inbuf weak pull 202 197 193 216 215 215 DEVRST_N MSIOD Inbuf weak pull 202 197 193 216 215 215 TDEVRST2MSSRST DEVRST_N TDEVRST2WPU Description 005 DEVRST_N 208 to Inbuf weak pull Figure 19 * DEVRST_N to Functional Timing Diagram for SmartFusion2 9''9339'',[ 5&26&B0+] '(9567B1 ,1%8) 7ULVWDWH +LJK= ,1%8):($.38// 06,206,2'''5,2 7'(9567325 7325066567 32:(5B21B5(6(7B1 7066567287 7'(9567066567 066B5(6(7B1B0) 287%8) 7ULVWDWH +LJK= 7'(9567287 7325287 Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 117 IGLOO2 FPGA and SmartFusion2 SoC FPGA Figure 20 * DEVRST_N to Functional Timing Diagram for IGLOO2 9''9339'',[ 5&26&B0+] '(9567B1 7ULVWDWH +LJK= ,1%8) ,1%8):($.38// 06,206,2'''5,2 7'(9567325 32:(5B21B5(6(7B1 7325287 7'(9567287 7ULVWDWH +LJK= 287%8) The following table lists the DEVRST_N to functional times in worst-case industrial conditions when TJ = 100 C, VDD = 1.14 V. Table 292 * DEVRST_N to Functional Times When MSS/HPMS is not Used Maximum Power-up to Functional Time (uS) Symbol From To Description 005 TPOR2OUT POWER_ON Output Fabric to _RESET_N available at output I/O 010 025 050 060 090 150 114 116 113 113 115 115 114 TDEVRST2OUT DEVRST_N Output VDD at its available at minimum I/O threshold level to output 314 353 314 307 343 341 341 TDEVRST2POR DEVRST_N POWER_O VDD at its N_RESET_ minimum N threshold level to fabric 200 238 201 195 230 229 227 TDEVRST2WPU DEVRST_N DDRIO Inbuf weak pull DEVRST_N 208 to Inbuf weak pull 202 197 193 216 215 215 DEVRST_N MSIO Inbuf DEVRST_N 208 weak pull to Inbuf weak pull 202 197 193 216 215 215 DEVRST_N MSIOD Inbuf weak pull 202 197 193 216 215 215 DEVRST_N 208 to Inbuf weak pull Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 118 IGLOO2 FPGA and SmartFusion2 SoC FPGA 2.3.27 Flash*Freeze Timing Characteristics The following table lists the Flash*Freeze entry and exit times in worst-case industrial conditions when TJ = 100 C, VDD = 1.14 V. Table 293 * Flash*Freeze Entry and Exit Times Entry/Exit Timing FCLK = 100MHz Entry/Exit Timing FCLK = 3 MHz 050 All Devices Parameter Symbol 005, 010, 025, 060, 090, and 150 Entry time TFF_ENTRY 160 150 320 215 200 430 100 100 140 136 120 190 Exit time with TFF_EXIT respect to the MSS PLL Lock 200 200 Exit time with TFF_EXIT respect to the fabric PLL lock1 Exit time with respect to the fabric buffer output 1. TFF_EXIT 200 200 Unit Conditions s eNVM and MSS/HPMS PLL = ON s eNVM and MSS/HPMS PLL= OFF s eNVM and MSS/HPMS PLL = ON during F*F s eNVM = ON and MSS/HPMS PLL = OFF during F*F and MSS/HPMS PLL turned back on at exit s eNVM and MSS/HPMS PLL = OFF during F*F and both are turned back on at exit s eNVM = OFF and MSS/HPMS PLL = ON during F*F and eNVM turned back on at exit ms eNVM and MSS/HPMS PLL = ON during F*F ms eNVM and MSS/HPMS PLL = OFF during F*F and both are turned back on at exit s eNVM and MSS/HPMS PLL = ON during F*F s eNVM and MSS/HPMS PLL = OFF during F*F and both are turned back on at exit 285 285 1.5 1.5 1.5 1.5 1.5 1.5 21 15 21 65 55 65 PLL Lock Delay set to 1024 cycles (default). 2.3.28 DDR Memory Interface Characteristics The following table lists the DDR memory interface characteristics in worst-case industrial conditions when TJ = 100 C, VDD = 1.14 V. Table 294 * DDR Memory Interface Characteristics Supported Data Rate Standard Min Max Unit DDR3 667 667 Mbps DDR2 667 667 Mbps Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 119 IGLOO2 FPGA and SmartFusion2 SoC FPGA Table 294 * DDR Memory Interface Characteristics LPDDR 2.3.29 50 400 Mbps SFP Transceiver Characteristics IGLOO2 and SmartFusion2 SerDes complies with small form-factor pluggable (SFP) requirements as specified in SFP INF-80741. The following table provides the electrical characteristics. The following table lists the SFP transceiver electrical characteristics in worst-case industrial conditions when TJ = 100 C, VDD = 1.14 V. Table 295 * SFP Transceiver Electrical Characteristics Differential Peak-Peak Voltage Pin RD+/- 1 TD+/-2 1. 2. 2.3.30 Direction Min Max Unit Output 1600 2400 mV Input 350 2400 mV Based on default SerDes transmitter settings for PCIe Gen1. Lower amplitudes are available through programming changes to TX_AMP setting. Based on Input Voltage Common-Mode (VICM) = 0 V. Requires AC Coupling. SerDes Electrical and Timing AC and DC Characteristics PCIe is a high-speed, packet-based, point-to-point, low-pin-count, serial interconnect bus. The IGLOO2 and SmartFusion2 SoC FPGAs has up to four hard high-speed serial interface blocks. Each SerDes block contains a PCIe system block. The PCIe system is connected to the SerDes block. The following table lists the transmitter parameters in worst-case industrial conditions when TJ = 100 C, VDD = 1.14 V. Table 296 * Transmitter Parameters Symbol Description Min Max Unit VTX-DIFF-PP Differential swing (2.5 Gbps, 5.0 Gbps) 0.8 1.2 V VTX-CM-AC-P Output common mode voltage (2.5 Gbps) 20 mV 100 mV VTX-CM-AC-PP Output common mode voltage (5.0 Gbps) VTX-RISE-FALL Rise and fall time (20% to 80%, 2.5 Gbps) 0.125 UI Rise and fall time (20% to 80%, 5.0 Gbps) 0.15 UI ZTX-DIFF-DC Output impedance-differential 80 LTX-SKEW RLTX-DIFF 120 Lane-to-lane TX skew within a SerDes block (2.5 Gbps) 500 ps + 2 UI ps Lane-to-lane TX skew within a SerDes block (5.0 Gbps) 500 ps + 4 UI ps Return loss differential mode (2.5 Gbps) -10 dB Return loss differential mode (5.0 Gbps) 0.05 GHz to 1.25 GHz -10 dB 1.25 GHz to 2.5 GHz -8 dB RLTX-CM Return loss common mode (2.5 Gbps, 5.0 Gbps) -6 dB TX-LOCK-RST Transmit PLL lock time from reset 10 Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 s 120 IGLOO2 FPGA and SmartFusion2 SoC FPGA Table 296 * Transmitter Parameters (continued) VTX-AMP 100 mV setting 90 150 mV 400 mV setting 320 480 mV 800 mV setting 660 940 mV 1200 mV setting 950 1400 mV The following table lists the receiver pa in worst-case industrial conditions when TJ = 100 C, VDD = 1.14 V. Table 297 * Receiver Parameters Symbol Description Min VRX-IN-PP-CC Differential input peak-to-peak sensitivity (2.5 Gbps) Typ Max Unit 0.238 1.2 V Differential input peak-to-peak sensitivity (2.5 Gbps, de-emphasized) 0.219 1.2 V Differential input peak-to-peak sensitivity (5.0 Gbps) 0.300 1.2 V Differential input peak-to-peak sensitivity (5.0 Gbps, de-emphasized) 0.300 1.2 V 150 mV VRX-CM-AC-P Input common mode range (AC coupled) ZRX-DIFF-DC Differential input termination 80 100 120 REXT External calibration resistor 1,188 1,200 1,212 CDR-LOCK-RST CDR relock time from reset 15 s RLRX-DIFF Return loss differential mode (2.5 Gbps) -10 dB 0.05 GHz to 1.25 GHz -10 dB 1.25 GHz to 2.5 GHz -8 dB -6 dB Return loss differential mode (5.0 Gbps) RLRX-CM Return loss common mode (2.5 Gbps, 5.0 Gbps) RX-CID1 CID limit (set by 8B/10B coding, not the receiver PLL) VRX-IDLE-DET-DIFF-PP Signal detect limit 1. 65 200 UI 175 mV AC-coupled, BER = e-12. Table 298 * SerDes Protocol Compliance Protocol Maximum Data Rate (Gbps) -1 -Std PCIe Gen 1 2.5 Yes Yes PCIe Gen 2 5.0 Yes XAUI 3.125 Yes Generic EPCS 3.2 Yes Generic EPCS 2.5 Yes Yes Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 121 IGLOO2 FPGA and SmartFusion2 SoC FPGA The following table lists the SerDes reference clock AC specifications in worst-case industrial conditions when TJ = 100 C, VDD = 1.14 V. Table 299 * SerDes Reference Clock AC Specifications Parameter Symbol Min Max Unit Reference clock frequency FREFCLK 100 160 MHz Reference clock rise time TRISE 0.6 4 V/ns Reference clock fall time TFALL 0.6 4 V/ns Reference clock duty cycle TCYC 40 60 % Reference clock mismatch MMREFCLK -300 300 ppm Reference spread spectrum clock SSCref 0 5000 ppm Table 300 * HCSL Minimum and Maximum DC Input Levels (Applicable to SerDes REFCLK Only) Parameter Symbol Min Typ Max Unit 2.625 V 2.625 V Recommended DC Operating Conditions Supply voltage 2.375 VDDI 2.5 HCSL DC Input Voltage Specification DC Input voltage VI 0 HCSL Differential Voltage Specification Input common mode voltage VICM 0.05 2.4 V Input differential voltage VIDIFF 100 1100 mV Table 301 * HCSL Minimum and Maximum AC Switching Speeds (Applicable to SerDes REFCLK Only) Parameter Symbol Min Typ Max Unit 350 Mbps HCSL AC Specifications Maximum data rate (for MSIO I/O bank) FMAX HCSL Impedance Specifications Termination resistance Rt 2.3.31 SmartFusion2 Specifications 2.3.31.1 MSS Clock Frequency 100 The following table lists the maximum frequency for MSS main clock in worst-case industrial conditions when TJ = 100 C, VDD = 1.14 V. Table 302 * Maximum Frequency for MSS Main Clock Symbol Description -1 M3_CLK Maximum frequency for the MSS main clock 166 -Std Unit 142 MHz Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 122 IGLOO2 FPGA and SmartFusion2 SoC FPGA 2.3.31.2 SmartFusion2 Inter-Integrated Circuit (I2C) Characteristics This section describes the DC and switching of the IC interface. Unless otherwise noted, all output characteristics given are for a 100 pF load on the pins. For timing parameter definitions, see Figure 21, page 124. The following table lists the I2C characteristics in worst-case industrial conditions when TJ = 100 C, VDD = 1.14 V Table 303 * I2C Characteristics Parameter Symbol Min Input low voltage VIL Input high voltage VIH VHYS Hysteresis of schmitt triggered inputs for VDDI > 2V Typ Max Unit Conditions -0.3 0.8 V See Single-Ended I/O Standards, page 25 for more information. I/O standard used for illustration: MSIO bank-LVTTL 8 mA low drive. 2 3.45 V See Single-Ended I/O Standards, page 25 for more information. I/O standard used for illustration: MSIO bank-LVTTL 8 mA low drive. V See Table 28, page 24 for more information. 0.05 x VDDI Input current high IIL 10 A See Single-Ended I/O Standards, page 25 for more information. Input current low IIH 10 A See Single-Ended I/O Standards, page 25 for more information. Input rise time Tir 1000 ns Standard mode 300 ns Fast mode 300 ns Standard mode 300 ns Fast mode Maximum output voltage VOL low (open drain) at 3 mA sink current for VDDI > 2 V 0.4 V See Single-Ended I/O Standards, page 25 for more information. I/O standard used for illustration: MSIO bank-LVTTL 8 mA low drive. Pin capacitance 10 pF VIN = 0, f = 1.0 MHz 21.04 ns VIHmin to VILMax, CLOAD = 400 pF 5.556 ns VIHmin to VILMax, CLOAD = 100 pF 19.887 ns VILMax to VIHmin, CLOAD = 400 pF 5.218 ns VILMax to VIHmin, CLOAD = 100 pF Input fall time Tif Cin 1 Output fall time from VIHMin to VILMax1 tOF Output rise time from VILMax to VIHMin1 tOR 1 Output buffer maximum pull-down resistance2, 3 Rpull-up2,3 50 Output buffer maximum pull-up resistance2, 4 Rpull-down2,4 131.25 Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 123 IGLOO2 FPGA and SmartFusion2 SoC FPGA Table 303 * I2C Characteristics (continued) Parameter Symbol Maximum data rate DMAX Pulse width of spikes which must be suppressed by the input filter 1. 2. 3. 4. Min Typ TFILT Max Unit 400 Kbps Fast mode 100 Kbps Standard mode 50 ns Conditions Fast mode These values are provided for MSIO Bank-LVTTL 8 mA Low Drive at 25 C, typical conditions. For board design considerations and detailed output buffer resistances, use the corresponding IBIS models located on the SoC Products Group website: http://www.microsemi.com/soc/download/ibis/default.aspx. These maximum values are provided for information only. Minimum output buffer resistance values depend on VDDIx, drive strength selection, temperature, and process. For board design considerations and detailed output buffer resistances, use the corresponding IBIS models located on the SoC Products Group website: http://www.microsemi.com/soc/download/ibis/default.aspx. R(PULL-DOWN-MAX) = (VOLspec)/IOLspec. R(PULL-UP-MAX) = (VDDImax-VOHspec)/IOHspec. The following table lists the I2C switching characteristics in worst-case industrial conditions when TJ = 100 C, VDD = 1.14 V Table 304 * I2C Switching Characteristics -1 Std Parameter Symbol Min Min Unit Low period of I2C_x_SCL TLOW 1 1 PCLK cycles High period of I2C_x_SCL THIGH 1 1 PCLK cycles START hold time THD;STA 1 1 PCLK cycles START setup time TSU;STA 1 1 PCLK cycles DATA hold time THD;DAT 1 1 PCLK cycles DATA setup time TSU;DAT 1 1 PCLK cycles STOP setup time TSU;STO 1 1 PCLK cycles Figure 21 * I2C Timing Parameter Definition SDA TRISE SCL tLOW tSU;STA S tHD;STA TFALL tHIGH tHD;DAT tSU;DAT Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 tSU;STO P 124 IGLOO2 FPGA and SmartFusion2 SoC FPGA 2.3.31.3 Serial Peripheral Interface (SPI) Characteristics This section describes the DC and switching of the SPI interface. Unless otherwise noted, all output characteristics given are for a 35 pF load on the pins and all sequential timing characteristics are related to SPI_x_CLK. For timing parameter definitions, see Figure 22, page 127. The following table lists the SPI characteristics in worst-case industrial conditions when TJ = 100 C, VDD = 1.14 V Table 305 * SPI Characteristics for All Devices Symbol Description Min Typ SPIFMAX Maximum operating frequency of SPI interface sp1 sp2 sp3 sp4 Max Unit Conditions 20 MHz SPI_[0|1]_CLK minimum period SPI_[0|1]_CLK = PCLK/2 12 ns SPI_[0|1]_CLK = PCLK/4 24.1 ns SPI_[0|1]_CLK = PCLK/8 48.2 ns SPI_[0|1]_CLK = PCLK/16 0.1 s SPI_[0|1]_CLK = PCLK/32 0.19 s SPI_[0|1]_CLK = PCLK/64 0.39 s SPI_[0|1]_CLK = PCLK/128 0.77 s SPI_[0|1]_CLK minimum pulse width high SPI_[0|1]_CLK = PCLK/2 6 ns SPI_[0|1]_CLK = PCLK/4 12.05 ns SPI_[0|1]_CLK = PCLK/8 24.1 ns SPI_[0|1]_CLK = PCLK/16 0.05 s SPI_[0|1]_CLK = PCLK/32 0.095 s SPI_[0|1]_CLK = PCLK/64 0.195 s SPI_[0|1]_CLK = PCLK/128 0.385 s SPI_[0|1]_CLK minimum pulse width low SPI_[0|1]_CLK = PCLK/2 6 ns SPI_[0|1]_CLK = PCLK/4 12.05 ns SPI_[0|1]_CLK = PCLK/8 24.1 ns SPI_[0|1]_CLK = PCLK/16 0.05 s SPI_[0|1]_CLK = PCLK/32 0.095 s SPI_[0|1]_CLK = PCLK/64 0.195 s SPI_[0|1]_CLK = PCLK/128 0.385 s SPI_[0|1]_CLK, SPI_[0|1]_DO, SPI_[0|1]_SS rise time (10%- 90%)1 2.77 ns Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 I/O Configuration: LVCMOS 2.5 V- 8 mA AC loading: 35 pF Test conditions: Typical voltage, 25 C 125 IGLOO2 FPGA and SmartFusion2 SoC FPGA Table 305 * SPI Characteristics for All Devices (continued) Symbol Description Min sp5 SPI_[0|1]_CLK, SPI_[0|1]_DO, SPI_[0|1]_SS fall time (10%- 90%)1 Typ 2.906 Max Unit Conditions ns IO Configuration: LVCMOS 2.5 V-8 mA AC Loading: 35 pF Test Conditions: Typical Voltage, 25 C SPI master configuration (applicable for 005, 010, 025, and 050 devices) sp6m sp7m SPI_[0|1]_DO setup time2 SPI_[0|1]_DO hold time (SPI_x_CLK_period/2) - 8.0 ns 2 (SPI_x_CLK_period/2) - 2.5 ns 2 sp8m SPI_[0|1]_DI setup time 12 ns sp9m time2 2.5 ns SPI_[0|1]_DI hold SPI slave configuration (applicable for 005, 010, 025, and 050 devices) sp6s SPI_[0|1]_DO setup time2 (SPI_x_CLK_period/2) - 17.0 ns sp7s SPI_[0|1]_DO hold time2 (SPI_x_CLK_period/2) + 3.0 ns sp8s time2 2 ns 7 ns sp9s SPI_[0|1]_DI setup SPI_[0|1]_DI hold time2 SPI master configuration (applicable for 060, 090, and 150 devices) sp6m sp7m sp8m sp9m SPI_[0|1]_DO setup time2 (SPI_x_CLK_period/2) - 7.0 ns SPI_[0|1]_DO hold time2 (SPI_x_CLK_period/2) - 9.5 ns SPI_[0|1]_DI setup time2 15 ns --2.5 ns SPI_[0|1]_DI hold time2 SPI slave configuration (applicable for 060, 090, and 150 devices) sp6s SPI_[0|1]_DO setup time2 (SPI_x_CLK_period/2) - 16.0 ns sp7s SPI_[0|1]_DO hold time2 (SPI_x_CLK_period/2) - 3.5 ns sp8s time2 3 ns 2.5 ns sp9s 1. 2. SPI_[0|1]_DI setup SPI_[0|1]_DI hold time2 For specific Rise/Fall Times board design considerations and detailed output buffer resistances, use the corresponding IBIS models located on the Microsemi SoC Products Group website: http://www.microsemi.com/soc/download/ibis/default.aspx. For allowable pclk configurations, see Serial Peripheral Interface Controller section in the UG0331: SmartFusion2 Microcontroller Subsystem User Guide. Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 126 IGLOO2 FPGA and SmartFusion2 SoC FPGA Figure 22 * SPI Timing for a Single Frame Transfer in Motorola Mode (SPH = 1) SP1 SP4 SP2 50% 50% SPI_0_CLK SPO = 0 SP5 SP3 90% 50% 10% 10% SPI_0_CLK SPO = 1 90% 90% SPI_0_SS 10% 1 0% SP4 SP5 SP6 5 0% SPI_0_DO MSB 90% 9 0% 5 0% 10% SP8 50% SPI_0_DI 2.3.32 SP7 SP9 MSB 10% SP5 SP4 50% CAN Controller Characteristics The following table lists the CAN controller characteristics in worst-case industrial conditions when TJ = 100 C, VDD = 1.14 V. Table 306 * CAN Controller Characteristics Parameter Description -1 -Std Unit FCANREFCLK1 Internally sourced CAN reference clock frequency 160 136 MHz BAUDCANMAX Maximum CAN performance baud rate 1 1 Mbps BAUDCANMIN Minimum CAN performance baud rate 0.05 0.05 Mbps 1. 2.3.33 PCLK to CAN controller must be a multiple of 8 MHz. USB Characteristics The following table lists the USB characteristics in worst-case industrial conditions when TJ = 100 C, VDD = 1.14 V. Table 307 * USB Characteristics Parameter Description -1 -Std Unit FUSBREFCLK Internally sourced USB reference clock frequency 166 142 MHz TUSBCLK USB clock period 16.66 16.66 ns TUSBPD Clock to USB data propagation delay 9.0 9.0 ns TUSBSU Setup time for USB data 6.0 6.0 ns TUSBHD Hold time for USB data 0 0 ns Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 127 IGLOO2 FPGA and SmartFusion2 SoC FPGA 2.3.34 MMUART Characteristics The following table lists the MMUART characteristics in worst-case industrial conditions when TJ = 100 C, VDD = 1.14 V. Table 308 * MMUART Characteristics Parameter Description -1 -Std Unit FMMUART_REF_CLK Internally sourced MMUART reference clock frequency. 166 142 MHz BAUDMMUARTTx Maximum transmit baud rate 10.375 8.875 Mbps BAUDMMUARTRx Maximum receive baud rate 10.375 8.875 Mbps 2.3.35 IGLOO2 Specifications 2.3.35.1 HPMS Clock Frequency The following table lists the maximum frequency for HPMS main clock in worst-case industrial conditions when TJ = 100 C, VDD = 1.14 V. Table 309 * Maximum Frequency for HPMS Main Clock 2.3.35.2 Symbol Description -1 -Std Unit HPMS_CLK Maximum frequency for the HPMS main clock 166 142 MHz IGLOO2 Serial Peripheral Interface (SPI) Characteristics This section describes the DC and switching of the SPI interface. Unless otherwise noted, all output characteristics given are for a 35 pF load on the pins and all sequential timing characteristics are related to SPI_0_CLK. For timing parameter definitions, see Figure 23, page 130. The following table lists the SPI characteristics in worst-case industrial conditions when TJ = 100 C, VDD = 1.14 V. Table 310 * SPI Characteristics for All Devices Symbol Description Min SPIFMAX Maximum operating frequency of SPI interface sp1 Typ Max Unit 20 MHz Conditions SPI_[0|1]_CLK minimum period SPI_[0|1]_CLK = PCLK/2 12 ns SPI_[0|1]_CLK = PCLK/4 24.1 ns SPI_[0|1]_CLK = PCLK/8 48.2 ns SPI_[0|1]_CLK = PCLK/16 0.1 s SPI_[0|1]_CLK = PCLK/32 0.19 s SPI_[0|1]_CLK = PCLK/64 0.39 s SPI_[0|1]_CLK = PCLK/128 0.77 s Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 128 IGLOO2 FPGA and SmartFusion2 SoC FPGA Table 310 * SPI Characteristics for All Devices (continued) Symbol Description sp2 SPI_[0|1]_CLK minimum pulse width high sp3 Min Typ Max Unit SPI_[0|1]_CLK = PCLK/2 6 ns SPI_[0|1]_CLK = PCLK/4 12.05 ns SPI_[0|1]_CLK = PCLK/8 24.1 ns SPI_[0|1]_CLK = PCLK/16 0.05 s SPI_[0|1]_CLK = PCLK/32 0.095 s SPI_[0|1]_CLK = PCLK/64 0.195 s SPI_[0|1]_CLK = PCLK/128 0.385 s Conditions SPI_[0|1]_CLK minimum pulse width low SPI_[0|1]_CLK = PCLK/2 6 ns SPI_[0|1]_CLK = PCLK/4 12.05 ns SPI_[0|1]_CLK = PCLK/8 24.1 ns SPI_[0|1]_CLK = PCLK/16 0.05 s SPI_[0|1]_CLK = PCLK/32 0.095 s SPI_[0|1]_CLK = PCLK/64 0.195 s SPI_[0|1]_CLK = PCLK/128 0.385 s sp4 SPI_[0|1]_CLK, SPI_[0|1]_DO, SPI_[0|1]_SS rise time (10%-90%)1 2.77 ns I/O Configuration: LVCMOS 2.5 V 8 mA AC loading: 35 pF test conditions: Typical voltage, 25 C sp5 SPI_[0|1]_CLK, SPI_[0|1]_DO, SPI_[0|1]_SS fall time (10%-90%)1 2.906 ns I/O Configuration: LVCMOS 2.5 V 8 mA AC loading: 35 pF test conditions: Typical voltage, 25 C SPI master configuration (applicable for 005, 010, 025, and 050 devices) sp6m SPI_[0|1]_DO setup time2 time2 (SPI_x_CLK_period/2) - 8.0 ns sp7m SPI_[0|1]_DO hold (SPI_x_CLK_period/2) - 2.5 ns sp8m SPI_[0|1]_DI setup time2 12 ns sp9m SPI_[0|1]_DI hold time2 2.5 ns SPI slave configuration (applicable for 005, 010, 025, and 050 devices) sp6s SPI_[0|1]_DO setup time2 (SPI_x_CLK_period/2) - 17.0 ns sp7s SPI_[0|1]_DO hold time2 (SPI_x_CLK_period/2) + 3.0 ns sp8s time2 2 ns 7 ns sp9s SPI_[0|1]_DI setup SPI_[0|1]_DI hold time2 Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 129 IGLOO2 FPGA and SmartFusion2 SoC FPGA Table 310 * SPI Characteristics for All Devices (continued) Symbol Description Min Typ Max Unit Conditions SPI master configuration (applicable for 060, 090, and 150 devices) sp6m SPI_[0|1]_DO setup time2 (SPI_x_CLK_period/2) - 7.0 ns sp7m SPI_[0|1]_DO hold time2 (SPI_x_CLK_period/2) - 9.5 ns sp8m SPI_[0|1]_DI setup time2 15 ns sp9m SPI_[0|1]_DI hold time2 -2.5 ns SPI slave configuration (applicable for 060, 090, and 150 devices) sp6s SPI_[0|1]_DO setup time2 (SPI_x_CLK_period/2) - 16.0 ns sp7s SPI_[0|1]_DO hold time2 (SPI_x_CLK_period/2) - 3.5 ns sp8s SPI_[0|1]_DI setup time 2 sp9s SPI_[0|1]_DI hold time2 1. 2. 3 ns 2.5 ns For specific Rise/Fall Times board design considerations and detailed output buffer resistances, use the corresponding IBIS models located on the Microsemi SoC Products Group website: http://www.microsemi.com/soc/download/ibis/default.aspx. For allowable pclk configurations, see the Serial Peripheral Interface Controller section in the UG0331: SmartFusion2 Microcontroller Subsystem User Guide. Figure 23 * SPI Timing for a Single Frame Transfer in Motorola Mode (SPH = 1) SP1 SP4 SP2 50% 50% SPI_0_CLK SPO = 0 SP5 SP3 90% 50% 10% 10% SPI_0_CLK SPO = 1 90% 90% SPI_0_SS 10% 1 0% SP4 SP5 SP6 SPI_0_DO 5 0% MSB 90% 9 0% 5 0% 10% SP8 SPI_0_DI SP7 50% SP9 MSB SP5 10% SP4 50% Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 130