V
RRM
= 50 V - 1000 V
I
F
=25 A
Features
• Types up to 1000 V V
RRM
• Hi
g
h sur
g
e current capabilit
y
• Universal 3-way terminals: snap on, wire-around, or P.C board mounting
Mechanical Data
Case: Molded plastic with heat sink mounted in the bridge
Weight: 15 grams or 0.53 ounces
Mountin
g
tor
q
ue: 20 inch-lbs ma
x
GBPC25005T/W th ru GBPC2504T/W
• High temperature soldering guaranteed: 260⁰C/ 10
seconds at 5 lbs(2.3 kg) tension
Silicon Bridge
Rectifier
• Integrally molded heat sink provides low thermal
resistance for maximum heat dissipation
• Void-free junction by using vacuum soldering
Mounting position: Bolt down on heat-sink with silicone thermal
compound between bridge and mounting surface
GBPC-T/W Package
Terminals: Either nickel plated 0.25"(6.35 mm) Faston lugs or
0.040"(1.02 mm) diameter copper leads.
gq
Polarity: Marked on body
Parameter Symbol GBPC25005T/W GBPC2501T/W Unit
Repetitive peak reverse voltage V
RRM
50 100 V
RMS reverse voltage V
RMS
35 70 V
DC blocking voltage V
DC
50 100 V
Continuous forward current I
F
25 25 A
Operating temperature T
j
-55 to 150 -55 to 150 °C
Storage temperature T
stg
-55 to 150 -55 to 150 °C
Parameter Symbol GBPC25005T/W GBPC2501T/W Unit
Diode forward voltage 1.1 1.1
55
500 500
Thermal characteristics
Thermal resistance, junction -
case R
thJC
1.9 1.9 °C/W
-55 to 150
GBPC2504T/W
55
GBPC2502T/W
1.9
V
R
= 50 V, T
j
= 125 °C
1.9
1.1 1.1
500
V
R
= 50 V, T
j
= 25 °C
I
F
= 12.5 A, T
j
= 25 °C
T
C
≤ 50 °C
Conditions
GBPC2504T/W
200
140
GBPC2502T/W
300 300
-55 to 150
Maximum ratings, at T
j
= 25 °C, unless otherwise specified (GBPCXXXXT uses GBPC-T package while GBPCXXXXW
uses GBPC-W package)
25
A300
Reverse current I
R
V
F
300
μA
-55 to 150 -55 to 150
T
C
= 25 °C, t
p
= 8.3 ms
Surge non-repetitive forward
current, Half Sine Wave I
F,SM
V
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
500
Conditions
400
280
400200
25
www.genesicsemi.com 1
GBPC25005T/W th ru GBPC2504T/W
www.genesicsemi.com 2
