MMBT3904T NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features * * * Epitaxial Planar Die Construction Complementary PNP Type Available (MMBT3906T) Ultra-Small Surface Mount Package SOT-523 * * * * Min Max Typ A 0.15 0.30 0.22 B 0.75 0.85 0.80 C 1.45 1.75 1.60 D 3/4 3/4 0.50 G G 0.90 1.10 1.00 H H 1.50 1.70 1.60 J 0.00 0.10 0.05 K 0.60 0.80 0.75 L 0.10 0.30 0.22 M 0.10 0.20 0.12 N 0.45 0.65 0.50 a 0 8 3/4 A C B C TOP VIEW Mechanical Data * * * * Dim Case: SOT-523, Molded Plastic Case material - UL Flammability Rating 94V-0 Moisture sensitivity: Level 1 per J-STD-020A Terminals: Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking (See Page 2): 1N Ordering & Date Code Information, See Page 2 Weight: 0.002 grams (approx.) E B K M J D L All Dimensions in mm Maximum Ratings @ TA = 25C unless otherwise specified Symbol MMBT3904T Unit Collector-Base Voltage Characteristic VCBO 60 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 6.0 V Collector Current - Continuous IC 200 mA Power Dissipation (Note 1) Pd 150 mW RqJA 833 C/W Tj, TSTG -55 to +150 C Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage and Temperature Range Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. DS30270 Rev. 2 - 2 1 of 3 MMBT3904T Electrical Characteristics @ TA = 25C unless otherwise specified Characteristic Symbol Min Max Unit Test Condition Collector-Base Breakdown Voltage V(BR)CBO 60 3/4 V IC = 10mA, IE = 0 Collector-Emitter Breakdown Voltage V(BR)CEO 40 3/4 V IC = 1.0mA, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO 6.0 3/4 V IE = 10mA, IC = 0 ICEX 3/4 50 nA VCE = 30V, VEB(OFF) = 3.0V IBL 3/4 50 nA VCE = 30V, VEB(OFF) = 3.0V hFE 40 70 100 60 30 3/4 3/4 300 3/4 3/4 3/4 Collector-Emitter Saturation Voltage VCE(SAT) 3/4 0.20 0.30 V IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA Base- Emitter Saturation Voltage VBE(SAT) 0.65 3/4 0.85 0.95 V IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA Output Capacitance Cobo 3/4 4.0 pF VCB = 5.0V, f = 1.0MHz, IE = 0 Input Capacitance Cibo 3/4 8.0 pF VEB = 0.5V, f = 1.0MHz, IC = 0 Input Impedance hie 1.0 10 kW Voltage Feedback Ratio hre 0.5 8.0 x 10-4 Small Signal Current Gain hfe 100 400 3/4 Output Admittance hoe 1.0 40 mS Current Gain-Bandwidth Product fT 300 3/4 MHz Noise Figure NF 3/4 5.0 dB Delay Time td 3/4 35 ns Rise Time tr 3/4 35 ns VCC = 3.0V, IC = 10mA, VBE(off) = - 0.5V, IB1 = 1.0mA Storage Time ts 3/4 200 ns VCC = 3.0V, IC = 10mA Fall Time tf 3/4 50 ns IB1 = IB2 = 1.0mA OFF CHARACTERISTICS (Note 2) Collector Cutoff Current Base Cutoff Current ON CHARACTERISTICS (Note 2) DC Current Gain IC = 100A, VCE = IC = 1.0mA, VCE = IC = 10mA, VCE = IC = 50mA, VCE = IC = 100mA, VCE = 1.0V 1.0V 1.0V 1.0V 1.0V SMALL SIGNAL CHARACTERISTICS VCE = 10V, IC = 1.0mA, f = 1.0kHz VCE = 20V, IC = 10mA, f = 100MHz VCE = 5.0Vdc, IC = 100mAdc, RS = 1.0KW, f = 1.0MHz SWITCHING CHARACTERISTICS Ordering Information (Note 3) Notes: Device Packaging Shipping MMBT3904T-7 SOT-523 3000/Tape & Reel 2. Short duration test pulse used to minimize self-heating effect. 3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information 1N = Product Type Marking Code YM = Date Code Marking Y = Year (ex: N = 2002) M = Month (ex: 9 = September) 1NYM Date Code Key Year 1998 1999 2000 2001 2002 2003 2004 Code J K L M N P R Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D DS30270 Rev. 2 - 2 2 of 3 MMBT3904T 250 15 f = 1MHz CIBO, INPUT CAPACITANCE (pF) COBO, OUTPUT CAPACITANCE (pF) Pd, POWER DISSIPATION (mW) (see Note 1) 200 150 100 50 10 5 Cibo Cobo 0 0.1 0 0 100 200 10 100 VCB, COLLECTOR-BASE VOLTAGE (V) Fig. 2, Input and Output Capacitance vs. Collector-Base Voltage TA, AMBIENT TEMPERATURE (C) Fig. 1, Power Derating Curve 1000 1 VCE(SAT), COLLECTOR-EMITTER (V) SATURATION VOLTAGE hFE, DC CURRENT GAIN 1 TA = 125C 100 TA = +25C TA = -25C 10 IC IB = 10 0.1 VCE = 1.0V 0.01 1 1 0.1 10 100 0.1 1000 1 10 1000 100 IC, COLLECTOR CURRENT (mA) Fig. 4, Typical Collector-Emitter Saturation Voltage vs. Collector Current IC, COLLECTOR CURRENT (mA) Fig. 3, Typical DC Current Gain vs Collector Current 10 VBE(SAT), BASE-EMITTER (V) SATURATION VOLTAGE IC IB = 10 1 0.1 0.1 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 5, Typical Base-Emitter Saturation Voltage vs. Collector Current DS30270 Rev. 2 - 2 3 of 3 MMBT3904T