© Semiconductor Components Industries, LLC, 2008
September, 2008 − Rev. 13
Publication Order Number:
BD676/D
BD676, BD676A, BD678,
BD678A, BD680, BD680A,
BD682, BD682T
Plastic Medium-Power
Silicon PNP Darlingtons
This series of plastic, medium−power silicon PNP Darlington
transistors can be used as output devices in complementary
general−purpose amplifier applications.
Features
•High DC Current Gain −
hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc
•Monolithic Construction
•BD676, 676A, 678, 678A, 680, 680A, 682 are complementary
with BD675, 675A, 677, 677A, 679, 679A, 681
•BD678, 678A, 680, 680A are equivalent to MJE 700, 701, 702, 703
•Pb−Free Package are Available*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector-Emitter Voltage
BD676, BD676A
BD678, BD678A
BD680, BD680A
BD682
VCEO
45
60
80
100
Vdc
Collector-Base Voltage
BD676, BD676A
BD678, BD678A
BD680, BD680A
BD682
VCB
45
60
80
100
Vdc
Emitter-Base Voltage VEB 5.0 Vdc
Collector Current IC4.0 Adc
Base Current IB0.1 Adc
Total Device Dissipation
@ TC = 25°C
Derate above 25°C
PD
40
0.32
W
W/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg −55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance,
Junction−to−Case
RqJC 3.13 °C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
TO−225AA
CASE 77
STYLE 1
4.0 AMP DARLINGTON
POWER TRANSISTORS
PNP SILICON
45, 60, 80, 100 VOLT, 40 WATT
321
http://onsemi.com
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
ORDERING INFORMATION
MARKING DIAGRAMS
YWW
BD6xxG
BD6xx = Device Code
xx = 76, 76A, 78, 78A,
80, 80A, 82, or 82T
Y = Year
WW = Work Week
G=Pb−Free Package
YWW
B
BD6xxG
COLLECTOR 2
BASE
3
EMITTER 1
BD676, BD676A, BD678, BD678A, BD680, BD680A, BD682, BD682T
http://onsemi.com
2
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Characteristic
ÎÎÎÎÎ
ÎÎÎÎÎ
Symbol
ÎÎÎ
ÎÎÎ
Min
ÎÎÎÎ
ÎÎÎÎ
Max
ÎÎÎ
ÎÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
OFF CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector−Emitter Breakdown Voltage (Note 1) BD676, 676A
(IC = 50 mAdc, IB = 0) BD678, 678A
BD680, 680A
BD682
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
BVCEO
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
45
60
80
100
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
−
−
−
−
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current (VCE = Half Rated VCEO, IB = 0)
ÎÎÎÎÎ
ÎÎÎÎÎ
ICEO
ÎÎÎ
ÎÎÎ
−
ÎÎÎÎ
ÎÎÎÎ
500
ÎÎÎ
ÎÎÎ
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current
(VCB = Rated BVCEO, IE = 0)
(VCB = Rated BVCEO. IE = 0, TC = 100°C)
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ICBO
ÎÎÎ
ÎÎÎ
ÎÎÎ
−
−
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
0.2
2.0
ÎÎÎ
ÎÎÎ
ÎÎÎ
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)
ÎÎÎÎÎ
ÎÎÎÎÎ
IEBO
ÎÎÎ
ÎÎÎ
−
ÎÎÎÎ
ÎÎÎÎ
2.0
ÎÎÎ
ÎÎÎ
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ON CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DC Current Gain (Note 1)
(IC = 1.5 Adc, VCE = 3.0 Vdc) BD676, 678, 680, 682
(IC = 2.0 Adc, VCE = 3.0 Vdc) BD676A, 678A, 680A
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
hFE
ÎÎÎ
ÎÎÎ
ÎÎÎ
750
750
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
−
−
ÎÎÎ
ÎÎÎ
ÎÎÎ
−
−
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector−Emitter Saturation Voltage (Note 1)
(IC = 1.5 Adc, IB = 30 mAdc) BD678, 680, 682
(IC = 2.0 Adc, IB = 40 mAdc) BD676A, 678A, 680A
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
VCE(sat)
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
−
−
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
2.5
2.8
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Base−Emitter On Voltage (Note 1)
(IC = 1.5 Adc, VCE = 3.0 Vdc) BD678, 680, 682
(IC = 2.0 Adc, VCE = 3.0 Vdc) BD676A, 678A, 680A
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
VBE(on)
ÎÎÎ
ÎÎÎ
ÎÎÎ
−
−
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
2.5
2.5
ÎÎÎ
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DYNAMIC CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Small−Signal Current Gain (IC = 1.5 Adc, VCE = 3.0 Vdc, f = 1.0 MHz)
ÎÎÎÎÎ
ÎÎÎÎÎ
hfe
ÎÎÎ
ÎÎÎ
1.0
ÎÎÎÎ
ÎÎÎÎ
−
ÎÎÎ
ÎÎÎ
−
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
50
40
10
5.0
015 30 45 60 75 105 135 150 165
Figure 1. Power Temperature Derating
TC, CASE TEMPERATURE (°C)
PD, POWER DISSIPATION (WATTS)
12090
45
20
15
30
25
35
Figure 2. DC Safe Operating Area
5.0
1.0
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
2.0
1.0
0.5
0.05 2.0 5.0 10 50 100
BONDING WIRE LIMIT
THERMAL LIMIT at TC = 25°C
SECONDARY BREAKDOWN LIMIT
0.2
0.1
IC, COLLECTOR CURRENT (AMP)
TC = 25°C
BD676, 676A
BD678, 678A
BD680, 680A
BD682
20
There are two limitations on the power handling ability of
a transistor average junction temperature and secondary
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; e.g., the transistor must not be subjected to greater
dissipation than the curves indicate.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by secondary breakdown.
BD676, BD676A, BD678, BD678A, BD680, BD680A, BD682, BD682T
http://onsemi.com
3
Figure 3. Darlington Circuit Schematic
BASE
PNP
BD676, 676A
BD678, 678A
BD680, 680A
BD682
COLLECTOR
EMITTER
[ 8.0 k [ 120
ORDERING INFORMATION
Device Package Shipping
BD676 TO−225AA 500 Units / Box
BD676G TO−225AA
(Pb−Free)
500 Units / Box
BD676A TO−225AA 500 Units / Box
BD676AG TO−225AA
(Pb−Free)
500 Units / Box
BD678 TO−225AA 500 Units / Box
BD678G TO−225AA
(Pb−Free)
500 Units / Box
BD678A TO−225AA 500 Units / Box
BD678AG TO−225AA
(Pb−Free)
500 Units / Box
BD680 TO−225AA 500 Units / Box
BD680G TO−225AA
(Pb−Free)
500 Units / Box
BD680A TO−225AA 500 Units / Box
BD680AG TO−225AA
(Pb−Free)
500 Units / Box
BD682 TO−225AA 500 Units / Box
BD682G TO−225AA
(Pb−Free)
500 Units / Box
BD682T TO−225AA 50 Units / Rail
BD682TG TO−225AA
(Pb−Free)
50 Units / Rail
BD676, BD676A, BD678, BD678A, BD680, BD680A, BD682, BD682T
http://onsemi.com
4
PACKAGE DIMENSIONS
TO−225AA
CASE 77−09
ISSUE Z
STYLE 1:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 077-01 THRU -08 OBSOLETE, NEW STANDARD
077-09.
−B−
−A−M
K
FC
Q
H
V
G
S
D
J
R
U
132
2 PL
M
A
M
0.25 (0.010) B M
M
A
M
0.25 (0.010) B M
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.425 0.435 10.80 11.04
B0.295 0.305 7.50 7.74
C0.095 0.105 2.42 2.66
D0.020 0.026 0.51 0.66
F0.115 0.130 2.93 3.30
G0.094 BSC 2.39 BSC
H0.050 0.095 1.27 2.41
J0.015 0.025 0.39 0.63
K0.575 0.655 14.61 16.63
M5 TYP 5 TYP
Q0.148 0.158 3.76 4.01
R0.045 0.065 1.15 1.65
S0.025 0.035 0.64 0.88
U0.145 0.155 3.69 3.93
V0.040 --- 1.02 ---
__
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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
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BD676/D
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