MOTOROLA SC {XSTRS/R F} 96 De eaez254 ooazoa, oo 86D 82031 OO "6367254 MOTOROLA SC (XSTRS/R F) TO 2 Ff s7 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VcEO 45 Vde MMBT930 Collector-Base Voltage Veso 45 Vde Emitter-Base Voltage VEBO 5.0 Vde Collector Current Continuous c 30 mAdc CASE 318-02/03, STYLE 6 SOT-23 (TO-236AA/AB) THERMAL CHARACTERISTICS Characteristic Symbol Max Unit 3 Coltector Total Device Dissipation FR-5 Board,* Pp 225 mw Ta = 26C \ Se Derate above 25C 1.8 mwrc i a pace Thermal Resistance Junction to Ambient Resa 556 CimW ' 2 o ye itter Total Device Dissipation Pp 300 mw Alumina Substrate,** Ta = 25C Derate above 25C 2.4 mWwrC Thermal Resistance Junction to Ambient Ra 417 CimW Junction and Storage Temperature Ty. Tstg 150 C GENERAL PURPOSE TRANSISTOR *FR-5 = 1.0 x 0.75 x 0.62 in. **Alumina = 0.4 x 0.3 x 0,024 in. 99.5% alumina. NPN SILICON DEVICE MARKING [MMBT9a0 = 1x | Refer to MPS3904 for graphs. ELECTRICAL CHARACTERISTICS (Ta = 26C unless otherwise noted.) | Characteristic [ Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage V(BRICEO 45 _- Vde {Ig = 10 mAdc, Ip = 0) Collector-Base Breakdown Voltage ViBRICBO 45 _ Vde (ic = 10 pAde, Ig = 0) Emitter-Base Breakdown Voltage V(BRIEBO 5.0 - Vde (lg = 10 pAde, Ic = 0) Collector Cutoff Current IcEo - 10 nAde (VcE = 5.0 Vde, IB = 0) Collector Cutoff Current IcBo _ 10 nAdc (Vop = 45 Vde, Iz = 0) Collector Cutoff Current Ices - 10 nAdc (VcE = 45 Vde, Veg = 0) Emitter Cutoff Current lEBo 10 nAdc (Vep = 5.0 Vde, Ig = 0) ' ON CHARACTERISTICS DC Current Gain hee (I = 10 pAde, VcE = 5.0 Vdc} 100 300 (ic = 500 pAdc, Vee = 5.0 Vde} 150 _ {ic = 10 mAde, VcE = 5.0 Vdc) _ 600 Collector-Emitter Saturation Voltage VcE(sat) - 1.0 Vde {lc = 10 mAde, Ig = 0.5 mAdc) Base-Emitter Saturation Voltage VBE(sat) 0.6 1.0 Vde {l = 10 mAde, Ig = 0.5 mAdc) SMALL-SIGNAL CHARACTERISTICS Current-Gain Bandwidth Product fT 30 _ MHz {I = 500 #Adc, Vcr = 5.0 Vdc, f = 30 MHz) Output Capacitance Cobo - 8.0 pF (Vcg = 5.0 Vde, Ig = 0, f = 1.0 MHz) Noise Figure NF _ 3.0 dB {Ic = 10 pAde, VcE = 5.0 Vde, Rg = 10 kA, f = 10 Hz to 15.7 kHz) MOTOROLA SMALL-SIGNAL SEMICONDUCTORS 3-96 en ot rnMOTOROLA SC {XSTRS/R F} i De ffeszez25y ooszoa2 a ff 6367254 MOTOROLA SC CXSTRS/R F) 96D 82032 OD | MAXIMUM RATINGS a T 2 9 -I5 Rating Symbol | MMBT2222 | MMBT2222A {| Unit ' Collector-Emitter Voltage VcEO 30 40 Vde M MBT2222 | Collector-Base Voltage Vcso 60 75 Vde : Emitter-Base Voltage VEBO 5.0 6.0 Vde MMBT2222A i Collector Current Continuous Ic 600 mAdc CASE 318-02/03, STYLE 6 ' OT-23 (TO-236AA/AB THERMAL CHARACTERISTICS $ ( } Characteristic Symbol Max Unit Total Device Dissipation FR-5 Board,* Pp 225 mw 3 Colfector Ta = 25C 3 Derate above 25C 18 mwrc 2 1 Thermal Resistance Junction to Ambient Raja 556 cimWw 1 9 o Base Total Device Dissipation Pp 300 mw zEmutter Alumina Substrate,** Ta = 25C Derate above 26C 2.4 mWPC Thermal Resistance Junction to Ambient Raa 417 CimW TRANSISTOR Junction and Storage Temperature Ty. Tstg 160 C NPN SILICO. *FR-5 = 1.0 x 0.75 x 0.62 in. N **Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. DEVICE MARKING : [mm812222 = 1B; MMBT2222A = 1P | Refer to MPS2222 for graphs. | i ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise noted.) [ Characteristic | Symbol Min Max Unit OFF CHARACTERISTICS : Cotlector-Emitter Breakdown Voltage V(BR)CEO Vde (t = 10 mAde, Ig = 0) MMBT2222 30 _ MMB72222A 40 Collector-Base Breakdown Voltage ViBRICBO Vde (Ic = 10 pAde, IE = 0} MMBT2222 60 ~ MMBT2222A 75 -_ Emitter-Base Breakdown Voitage V(BR)EBO Vde (ig = 10 pAde, Ig = 0) MMBT2222 5.0 - MMBT2222A 6.0 i Collector Cutoff Current IceEX - 10 nAdc : (VcE = 60 Vde, VEB{off) = 3.0 Vdc) MMBT2222A Collector Cutoff Current IcBo pAdc (Veg = 50 Vde, Ie = 0) MMBT2222 - 0.01 (Vcg = 60 Vde, IE = 0) MMBT2222A 0.01 (Vog = 50 Vde, Ie = 0, Ta = 125C} MMBT2222 _ 10 (Vcg = 50 Vde, Ig = 0, TA = 125C) MMBT2222A _ 10 Emitter Cutoff Current lEBO ad 10 nAdc (Vep = 3.0 Vdc, Io = 0) MMBT2222A Base Cutoff Current IBL _ 20 nAdc (VcE = 60 Vdc, VEB(off} = 3.0 Vde) MMBT2222A ON CHARACTERISTICS BC Current Gain hee (Ic = 0.1 mAdc, VcE = 10 Vde) . 35 _ (I = 1.0 mAdc, Voce = 10 Vde) 50 - (ig = 10 mAde, Voge = 10 Vde) 75 - {Ic = 10 mAde, Vee = 10 Vde, Ta = 55C) MMBT2222A only 35 _ (I = 150 mAde, Voce = 10 Vde)(1) 100 300 (Ic = 150 mAde, Vce = 1.0 Vde)(1} 50 - {lc = 500 mAde, VcE = 10 Vde}(1) MMBT2222 30 _ MMBT2222A 40 Collector-Emitter Saturation Voltage(1) VcE(sat) Vde (l = 150 mAdc, Ip = 15 mAdc) MMBT2222 _ 0.4 MMBT2222A - 0.3 (ig = 500 mAds, Ig = 50 mAdc} MMBT2222 MM8T2222A _ MOTOROLA SMALL-SIGNAL SEMICONDUCTORS 3-97MOTOROLA SC {XSTRS/R FT 4b pe jeanze5u g04c033 3 i 6367254 MOTOROLA SC (XSTRS/RF) 96D 82033. OD MMBT2222,A - T2I9GSES ELECTRICAL CHARACTERISTICS (continued) (Ta = 25C unless otherwise noted.) Characteristic Symbo! Min Max Unit Base-Emitter Saturation Voltage(1} VBE(sat} Vde {Ic = 150 mAde, Ig = 15 mAdc} MMBT2222 _ 1.3 MMBT2222A 0.6 1.2 (Ic = 500 mAde, Ip = 50 mAdc) MMBT2222 - 2.6 MMBT2222A _- 2.0 SMALL-SIGNAL CHARACTERISTICS Current-Gain Bandwidth Product(2) fr MHz (I = 20 mAdc, VcE = 20 Vdc, f = 100 MHz) MMBT2222 250 MMBT2222A4 300 _ Output Capacitance Cobo _ 8.0 pF (Vcg = 10 Vde, Ie = 0, f = 1.0 MHz} Input Capacitance Cibo pF (Veg = 0.8 Vde, ic = 0, f = 1.0 MHz} MMBT2222 a 30 MMBT2222A _ 25 Input impedance hie kQ (ic = 1.0 mAde, Vcg = 10 Vdo, f = 1.0 kHz) MMBT2222A 2.0 8.0 (lc = 10 mAdec, VcE = 10 Vde, f = 1.0 kHz) MIMBT2222A 0.25 1.25 Voltage Feedback Ratio Ne X 10-4 (tc = 1.0 mAdc, Voce = 10 Vdc, f = 1.0 kHz) MMBT22224 ~ 8.0 {Ic = 10 mAdc, VcE = 10 Vde, f = 1.0 kHz) MMBT2222A - 4.0 Small-Signal Current Gain hte _ (lc = 1.0 mAde, Voce = 10 Vdc, f = 1.0 kHz} MMBT2222A 50 300 {Ic = 10 mAde, VcE = 10 Vde, f = 1.0 kHz) MMB8T2222A 7 375 Output Admittance Hoe zBmhos {lc = 1,0 mAde, Veg = 10 Vde, f = 1.0 kHz) MMBT22224 5.0 35 (ig = 10 mAdc, Voge = 10 Vde, f = 1.0 kHz) MMBT2222A 25 200 Collector Base Time Constant rbC, _- 150 ps (Ig = 20 mAdc, Vcog = 20 Vde, f = 31.8 MHz) MMBT2222A Noise Figure NF 40 4.0 dB (ig = 100 wAdc, VE = 10 Vde, Rg = 1.0 kf, f = 1.0 kHz) MMBT2222A SWITCHING CHARACTERISTICS MMBT2222A only - Delay Time (Vcc = 30 Vde, VBE(off} = 0.5 Vde, ta _- 10 ns Rise Time Ic = 150 mAde, Ig, = 15 mAdc) tr _ 26 ns Storage Time (Voc = 30 Vde, I = 150 mAde, ts _ 225 ns Fall Time 'B1 = 'p2 = 15 mAde) tf - 60 ns (1) Pulse Test: Pulse Width < 300 ys, Duty Cycle < 2.0%. (2) ff is defined as the frequency at which [hfel extrapolates to unity. MOTOROLA SMALL-SIGNAL SEMICONDUCTORS 3-98 eee meeMOTOROLA SC {XSTRS/R FH We DE Pf_3e7254 ooszoay 5s 6367254 MOTOROLA SC (XSTRS/R F)~ ee 96D 82034 D | TH 3S* of | MAXIMUM RATINGS Rating Symbol Value Unit Collactor-Emitter Valtage VcEO 15 Vde Collector-Emitter Voltage VCES 40 Vde Collector-Base Voltage (0:18) 40 Vdc MM BT2369 Emitter-Base Voltage VEBO 4.5 Vde Collector Current Continuous Ic 500 mAdc CASE 318-02/03, STYLE 6 SOT-23 (TO-236AA/AB) THERMAL CHARACTERISTICS Characteristic Symbol Max Unit 3 Collector Total Device Dissipation FR-5 Board,* Pp 225 mw 4 Ta = 25C Derate above 25C 1.8 mWPC ' oe i Sase + Thermal Resistance Junction to Ambient Rega 556 CimW 2 mW 2 Emitter Total Device Dissipation Pp 300 Alumina Substrate,** Ta = 25C Derate above 26C 24 mwrc Thermal Resistance Junction to Ambient Ros 417 CcimW SWITCHING TRANSISTOR Junction and Storage Temperature Ty, Tet 150 C NPN SILICON *FR-5 = 1.0 x 0.76 x 0.62 in. **Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. DEVICE MARKING Refer to MPS2369 for graphs. | MMBT2369 = 1J J ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise noted.) [ Characteristic | Symbol | Min Typ Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage(1) V(BRICEO is _ _ Vde {l = 10 mAdg, Ig = 0) Collector-Emitter Breakdown Voltage V(BR)CES 40 ad _ Vde (Ic = 10 pAdc, Vge = 0) Collector-Base Breakdown Voltage V(BRICBO 40 - _ Vde {I = 10 pAde, IE = 0} Emitter-Base Breakdown Voltage ViBR)EBO 4.5 _- _ Vde (lg = 10 wAde, Ic = 0) Collector Cutoff Current IcBo pAde (Vcp = 20 Vde, Ig = 0) _ _ 0.4 (Vop = 20 Vdc, le = 0, Ta = 125C) _ _ 30 ON CHARACTERISTICS BC Current Gain(1) hee (I = 10 mAdc, VcE = 1.0 Vdc) 40 120 (Ig = 10 mAdc, Veg = 1.0 Vde, Ta = 55C) 20 - (I = 100 mAdc, Voce = 2.0 Vde} 20 Collector-Emitter Saturation Voltage(1} VcE(sat) _ 0.25 Vde (Ic = 10 mAds, Ig = 1.0 mAdc) Base-Emitter Saturation Voitage(1) VBElsat) 0.70 _ 0.85 Vde (Ic = 10 mAde, tg = 1.0 mAdc) SMALL-SIGNAL CHARACTERISTICS Output Capacitance Cobo _ 4.0 pF (Veg = 5.0 Vde, Ie = 0, f = 1.0 MHz) Small Signal Current Gain hfe 5.0 - _ _ {ig = 10 mAdo, Voce = 10 Vide, f = 100 MHz} i | SWITCHING CHARACTERISTICS ' Storage Time ts _ 5.0 13 ns (Ip1 = Ip2 = Ic = 10 mAdc} Turn-On Time ton _ 8.0 12 ns (Vcc = 3.0 Vde, I = 10 mAdc, Igy = 3.0 mAdc) Turn-Off Time toff _ 10 18 ns (Vcc = 3.0 Vde, I = 10 mAde, Ip1 = 3.0 mAdc, Ip2 = 1.6 mAdo) (1) Pulse Test: Pulse Width < 300 ps, Duty Cycle < 2.0%. MOTOROLA SMALL-SIGNAL SEMICONDUCTORS 3-99MOTOROLA SC IXSTRS/R FT qb DE gpbab7e54 OOdeds5 ? i 6367254 MOTOROLA SC CXSTRS/R F) 20: _D wee ee : io oy oe wot . a : ~ MAXIMUM RATINGS : Rating Symbol Value Unit B Collector-Emitter Voltage VcEO 60 Vde MMBT2484 z Collector-Base Voltage Vcao 60 Vde & Emitter-Base Voltage VEBO 6.0 Vde CASE 318-02/03, STYLE 6 B Collector Current Continuous Ie 50 mAdc SOT-23 (TO-236AA/AB) THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR-5 Board,* Pp 225 mw 7 coteetor Ta = 25C 3 Derate above 25C 1.8 mWFrC it 1 " ~ 1 a Base ; Thermal Resistance Junction to Ambient Raa 556 CimWw 2 : Total Device Dissipation Pp 300 mw 2 Emutter Alumina Substrate,** Ta = 25C Derate above 25C 2.4 mWFrC 5 Thermal Resistance Junction ta Ambient Rega A17 CimW : - " LOW NOISE TRANSISTOR i Junction and Storage Temperature Ty. Tstg 150 Cc . *FR-5 = 1.0 x 0.75 x 0,62 in. NPN SILICON **Alumina = 0.4 x 0.3 x 0.024 in. 99.6% alumina. DEVICE MARKING | MMB8T2484 = 1U | Refer to MPSA18 for graphs. ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise noted.) | Characteristic | Symbol Min Max | Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage VIBRICEO 60 _ Vde (Ic = 10 mAde, IB = 0) Collector-Base Breakdown Voltage ViBRICBO 60 Vde (lc = 10 pAde, Ig = 0} Emitter-Base Breakdown Voltage V(BRIEBO 5.0 _ Vde (IE = 10 pAde, Ic = 0) Collector Cutoff Current IcBo (Vop = 45 Vde, Ig = 0) - 10 nAdc (Vcop = 45 Vde, Ip = 0, Ta 150C) 10 pAde Emitter Cutoff Current leBo _ 10 nAde (VBE = 5.0 Vdc, Ic = 0) ON CHARACTERISTICS DC Current Gain. hre _ (Ig = 1.0 mAdc, Voge = 5.0 Vdc) 250 _ 1 (Ic = 10 mAde, Voce = 5.0 Vdc) - 800 Collector-Emitter Saturation Voltage VCE(sat) - 0.35 Vde : (I = 1.0 mAdc, Ip = 0.1 mAdc) Base-Emitter On Voltage VBE(on} ~ 0.95 Vde {ic = 1.0 mAde, Vee = 5.0 Vdc) SMALL-SIGNAL CHARACTERISTICS Output Capacitance Cobo ~ 6.0 pF (Veg = 5.0 Vac, Ie = 0, f = 1 MHz) Input Capacitance Cibo _ 6.0 pF (Vee = 0.5 Vde, Ic = 0, f = 1 MHz) Noise Figure NF _ 3.0 dB (ig = 10 pAdc, Voce = 5.0 Vdc, Rg = 10 kO, f = 1.0 kHz, BW = 200 Hz) s MOTOROLA SMALL-SIGNAL SEMICONDUCTORS 3-100