BSS63 BSS63 C E SOT-23 B Mark: T3 PNP General Purpose Amplifier This device is designed for general purpose amplifier and switch applications requiring high voltages. Sourced from Process 74. Absolute Maximum Ratings* Symbol TA = 25C unless otherwise noted Value Units VCEO Collector-Emitter Voltage Parameter 100 V VCBO Collector-Base Voltage 110 V VEBO Emitter-Base Voltage 6.0 V IC Collector Current - Continuous 200 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3) All voltages (V) and currents (A) are negative polarity for PNP transistors. Thermal Characteristics Symbol PD RJA TA = 25C unless otherwise noted Characteristic Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Ambient *Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm. 1997 Fairchild Semiconductor Corporation Max Units *BSS63 350 2.8 357 mW mW/C C/W 3 (continued) Electrical Characteristics Symbol TA = 25C unless otherwise noted Parameter Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO Collector-Emitter Breakdown Voltage IC = 100 A, IB = 0 100 V V(BR)CBO Collector-Base Breakdown Voltage IC = 10 A, IE = 0 110 V V(BR)EBO Emitter-Base Breakdown Voltage IE = 1.0 A, IC = 0 6.0 ICBO Collector-Cutoff Current IEBO Emitter-Cutoff Current VCB = 90 V, IE = 0 VCB = 90 V, IE = 0, TA = 150C VEB = 6.0 V, IC = 0 V 100 50 200 nA A nA 0.25 V 0.9 V ON CHARACTERISTICS hFE DC Current Gain VCE(sat) Collector-Emitter Saturation Voltage IC = 10 mA, VCE = 1.0 V IC = 25 mA, VCE = 1.0 V IC = 25 mA, IB =2.5 mA VBE(sat) Base-Emitter Saturation Voltage IC = 25 mA, IB =2.5 mA 30 30 SMALL SIGNAL CHARACTERISTICS Current Gain - Bandwidth Product fT IC = 25 mA, VCE = 5.0, f = 35 MHz 50 MHz NOTE: All voltages (V) and currents (A) are negative polarity for PNP transistors. Spice Model PNP (Is=21.48f Xti=3 Eg=1.11 Vaf=100 Bf=132.1 Ne=1.375 Ise=21.48f Ikf=.1848 Xtb=1.5 Br=3.661 Nc=2 Isc=0 Ikr=0 Rc=1.6 Cjc=17.63p Mjc=.5312 Vjc=.75 Fc=.5 Cje=73.39p Mje=.3777 Vje=.75 Tr=1.476n Tf=641.9p Itf=0 Vtf=0 Xtf=0 Rb=10) Typical Pulsed Current Gain vs Collector Current 200 V CE = 5V 150 125 C 100 50 0 0.0001 25 C - 40 C 0.001 0.01 0.1 I C - COLLECTOR CURRENT (A) 1 VCESAT- COLLE CTOR-EMITTER VOLTAGE (V) h FE - TYP ICAL PULSED CURRE NT GAIN Typical Characteristics Collector-Emitter Saturation Voltage vs Collector Current 0.4 = 10 0.3 0.2 25 C 125 C 0.1 - 40 C 0 0.1 1 10 I C - COLLECTOR CURRENT (mA) 100 BSS63 PNP General Purpose Amplifier (continued) BSS63 PNP General Purpose Amplifier Base-Emitter Saturation Voltage vs Collector Current V BE(O N)- BASE-E MITTER ON VOLTAGE (V) V BESAT - BASE -EMITTER VOLTAG E (V) Typical Characteristics 1 - 40 C 0.8 25 C 0.6 125 C 0.4 = 10 0.2 0.1 IC 1 10 - COLLECTOR CURRENT ( mA) 100 Base-Emitter ON Voltage vs Collector Current 1 - 40 C 0.8 25 C 0.6 125 C 0.4 V C E = 5V 0.2 0.1 1 10 I C - COLLECTOR CURRENT (mA) Collector-Emitter Breakdown Voltage with Resistance Between Emitter-Base 10 1 0.1 25 50 75 100 125 T A - AM BIENT TE MPE RATURE (C) 150 BV CER - BREAKDOWN VOLTAGE (V) V CB = 10 0V 220 210 190 180 170 0.1 1 10 100 1000 RESISTANCE (k ) Power Dissipation vs Ambient Temperature 80 60 40 C eb 20 C cb P D - POWER DISSIPATION (mW) 350 f = 1.0 MHz 0 0.1 3 200 Input and Output Capacitance vs Reverse Voltage CAPACITANCE (pF) I CBO - COLLECTOR CURRENT (nA) Collector-Cutoff Current vs Ambient Temperature 100 100 300 250 150 100 50 0 1 10 V R - REVERSE BIAS VOLTAGE(V) 100 SOT-23 200 0 25 50 75 100 TEMPERATURE ( o C) 125 150 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DOMETM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FAST FASTrTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM MICROWIRETM OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM PowerTrench QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER SMART STARTTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM UHCTM VCXTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. 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Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. G