3
1997 Fairchild Semiconductor Corporation
PNP General Purpose Amplifier
This device is designed for general purpose amplifier and switch
applications requiring high voltages. Sourced from Process 74.
BSS63
Absolute Maximum Ratings* T A = 25°C unless otherwise noted
Symbol Parameter Value Units
VCEO Collector-Emitter Voltage 100 V
VCBO Collector-Base Voltage 110 V
VEBO Emitter-Base Voltage 6.0 V
ICCollector Current - Continuous 200 mA
TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C
C
E
B
SOT-23
Mark: T3
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics T A = 25°C unless otherwise noted
Symbol Characteristic Max Units
*BSS63
PDTotal Device Dissipati on
Derate above 25°C350
2.8 mW
mW/°C
RθJA Thermal Resistance, Junction to Ambient 357 °C/W
*Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm.
BSS63
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3) All voltages (V) and currents (A) are negative polarity for PNP transistors.
PNP (Is=21.48f Xti=3 Eg=1.1 1 V af=100 Bf=132.1 Ne=1.375 Ise=21.48f Ikf=.1848 Xtb=1.5 Br=3.661 Nc=2 Isc=0
Ikr=0 Rc=1.6 Cjc=17.63p Mjc=.5312 Vjc=.75 Fc=.5 Cje=73.39p Mje=.3777 Vje=.75 Tr=1.476n Tf=641.9p Itf=0
Vtf=0 Xtf=0 Rb=10)
Typical Characteristics
Electrical Characteristics T A = 25°C unless otherwise noted
OFF CHARACTERISTICS
Symbol Parameter Test Conditions Min Max Units
V(BR)CEO Collector-Emitter Breakdown Voltage IC = 100
µ
A, IB = 0 100 V
V(BR)CBO Collector-Base Breakdown Voltage IC = 10
µ
A, IE = 0 110 V
V(BR)EBO Emitter-Base Breakdown Voltage IE = 1.0
µ
A, IC = 0 6.0 V
ICBO Collector-Cutoff Current VCB = 90 V, IE = 0
VCB = 90 V, IE = 0, TA = 150°C100
50 nA
µ
A
IEBO Emi t t er-Cutoff Current VEB = 6.0 V, IC = 0 200 nA
ON CHARACTERISTICS
hFE DC Current Gain IC = 10 mA, VCE = 1.0 V
IC = 25 mA, VCE = 1.0 V 30
30
VCE(sat)Collector-Emitter Saturation Voltage IC = 25 mA, IB =2.5 mA 0.25 V
VBE(sat)Base-Emitter Saturation Voltage IC = 25 mA, IB =2.5 mA 0.9 V
SMALL SIGNAL CHARACTERISTICS
fTCurrent Gain - Ba ndwidth Product IC = 25 mA, VCE = 5.0,
f = 35 MHz 50 MHz
Spice Model
PNP (Is=21.48f Xti=3 Eg=1.1 1 V af=100 Bf=132.1 Ne=1.375 Ise=21.48f Ikf=.1848 Xtb=1.5 Br=3.661 Nc=2 Isc=0
Ikr=0 Rc=1.6 Cjc=17.63p Mjc=.5312 Vjc=.75 Fc=.5 Cje=73.39p Mje=.3777 Vje=.75 Tr=1.476n Tf=641.9p Itf=0
Vtf=0 Xtf=0 Rb=10)
NOTE: All voltages (V) and currents (A) are negative polarity for PNP transistors.
Typ ical Pulsed Curr ent Gai n
vs Collector Cur rent
0.0001 0.001 0.01 0.1 1
0
50
100
150
200
I - COLLE CTOR CURRENT (A)
h - TYPICAL PULSED CURRENT GAI N
FE
- 40 °C
25 °C
C
V = 5V
CE
125 °C
Co llector-Emitter Satu r ati on
Vo ltage vs C o ll e ctor Cu r rent
0.1 1 10 100
0
0.1
0.2
0.3
0.4
I - COLLECTOR CURRENT (mA)
V - COLLE CTOR-EMI TTER VOLTAGE (V)
CESAT
C
β= 10
125 °C
- 40 °C
25 °C
PNP General Purpose Amplifier
(continued)
BSS63
3
Typical Characteristics
PNP General Purpose Amplifier
(continued)
C o ll ector- E mitte r Br ea kd own
Voltage wi t h Resistan ce
Betwee n Emitter -Ba se
0.1 1 10 100 1000
170
180
190
200
210
220
RESISTANCE (k )
BV - BREAKDOWN VOLTAGE (V)
CER
Input and Out put Capacitance
vs Reverse Voltage
0.1 1 10 100
0
20
40
60
80
V - REVERSE BIAS VOLTAGE(V)
CAPA CITAN CE ( p F )
C
f = 1.0 M H z
R
C
cb
eb
BSS63
Power Dissipation vs
Ambient Temperature
0 25 50 75 100 125 150
0
50
100
150
200
250
300
350
TEMPERATURE ( C)
P - POWER DISSIPATION (mW)
D
o
SOT-23
Base-Emitter ON Voltage vs
Co llector Cur rent
0.1 1 10 100
0.2
0.4
0.6
0.8
1
I - C OLLECTOR CURRENT (mA)
V - BASE- EMIT TER O N VOLTAGE ( V )
BE(ON)
125 °C
- 40 °C
25 °C
C
V = 5 V
CE
B ase-Emitter Satu ration
Voltage vs C o llec tor C u rren t
0.1 1 10 100
0.2
0.4
0.6
0.8
1
I - C OLLE CTOR CURRENT (mA)
V - BA SE-EMITTER VOLTAGE (V)
BESAT
C
β= 10
125 °C
- 40 °C
25 °C
Co llector-Cu to ff Cur rent
vs Amb ient Temperatur e
25 50 75 100 125 150
0.1
1
10
100
T - AM BIE NT TEMPE RATURE ( C)
I - COLLECTOR CURRENT (nA)
A
V = 100V
CB
°
CBO
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Definition of Terms
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Obsolete
This datasheet contains the design specifications for
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any manner without notice.
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