HiPerFAST TM IGBT with Diode IXGK 60N60C2D1 VCES IXGX 60N60C2D1 IC25 VCE(sat) C2-Class High Speed IGBTs tfi(typ) Symbol Test Conditions Maximum Ratings V CES TJ = 25C to 150C 600 V VCGR TJ = 25C to 150C; RGE = 1 M 600 V VGES Continuous 20 V VGEM Transient 30 V IC25 TC = 25C (limited by leads) 75 A IC110 TC = 110C 60 A IF110 TC = 110C ICM TC = 25C, 1 ms SSOA VGE = 15 V, TVJ = 125C, RG = 10 (RBSOA) Clamped inductive load @ VCE 600 V PC TC = 25C 48 A 300 A ICM = 100 A 480 W -55 ... +150 C TJM 150 C Tstg -55 ... +150 C TJ Md Mounting torque, TO-264 Weight TO-264 PLUS247 1.13/10 Nm/lb.in. Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Symbol Test Conditions IC ICES VCE = VCES VGE = 0 V IGES VCE = 0 V, VGE = 20 V VCE(sat) IC = 50 A, VGE = 15 V Note 1 (c) 2005 IXYS All rights reserved g g 300 C Characteristic Values (TJ = 25C unless otherwise specified) Min. Typ. Max. = 250 A, VCE = VGE VGE(th) 10 6 3.0 TJ = 25C TJ = 125C TJ = 25C TJ = 125C 2.1 1.8 5.0 V 650 5 A mA 100 nA 2.5 V V = 600 V = 75 A = 2.5 V = 35 ns TO-264 AA (IXGK) (TAB) G C E PLUS247 (IXGX) (TAB) G = Gate E = Emitter C = Collector Tab = Collector Features * Very high frequency IGBT and anti-parallel FRED in one package * Square RBSOA * High current handling capability * MOS Gate turn-on for drive simplicity * Fast Recovery Epitaxial Diode (FRED) with soft recovery and low IRM Applications * Switch-mode and resonant-mode power supplies * Uninterruptible power supplies (UPS) * DC choppers * AC motor speed control * DC servo and robot drives Advantages * Space savings (two devices in one package) * Easy to mount with 1 screw DS99044B(11/05) IXGK 60N60C2D1 IXGX 60N60C2D1 Symbol gfs Test Conditions Characteristic Values (TJ = 25C unless otherwise specified) Min. Typ. Max. 58 S 3900 280 pF pF Cres 97 pF Qg Qge 146 28 nC nC 50 nC Cies Coes IC = 50 A; VCE = 10 V, Note 1 40 VCE = 25 V, VGE = 0 V, f = 1 MHz IC = 50 A, VGE = 15 V, VCE = 0.5 VCES Qgc td(on) Dim. 18 ns tri Inductive load, TJ = 25C 25 ns td(off) IC = 50 A, VGE = 15 V 95 150 ns VCE = 400 V, RG = Roff = 2.0 35 ns Eoff 0.48 0.8 mJ td(on) tri Eon td(off) tfi Eoff 18 25 0.9 130 80 1.2 ns ns mJ ns ns mJ 0.15 0.26 K/W K/W tfi Inductive load, TJ = 125C IC = 50 A, VGE = 15 V VCE = 400 V, RG = Roff = 2.0 RthJC RthCK Reverse Diode (FRED) Millimeter Min. Max. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 Test Conditions VF IF = 60 A, VGE = 0 V, Note 1 IRM IF = 60 A, VGE = 0 V, -diF/dt = 100 A/ TJ = 100C VR = 100 V IF = 1 A; -di/dt = 200 A/ms; VR = 30 V TJ = 150C RthJC 2.1 1.4 V 8.3 A 35 0.65 K/W .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 PLUS247 Outline Terminals: Dim. A A1 A2 b b1 b2 C D E e L L1 Q R 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) 4 - Drain (Collector) Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 IXYS reserves the right to change limits, test conditions, and dimensions. 4,835,592 4,850,072 4,881,106 Inches Max. ns Note 1: Pulse test, t 300 s, duty cycle 2 % IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: Min. Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. Symbol t rr TO-264 AA Outline 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6771478 B2 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190 IXGK 60N60C2D1 IXGX 60N60C2D1 Fig. 1. Output Characteristics @ 25 Deg. C Fig. 2. Extended Output Characteristics @ 25 deg. C 100 200 VG E = 15V 13V 11V 90 175 9V 150 70 7V I C - Amperes I C - Amperes 80 VG E = 15V 13V 11V 9V 60 50 40 125 100 7V 75 30 50 20 5V 10 25 0.5 1 1.5 2 2.5 3 1 3.5 1.5 2 2.5 3 4 4.5 V CE - Volts Fig. 3. Output Characteristics @ 125 Deg. C Fig. 4. Temperature Dependence of V CE(sat) 1.2 VGE = 15V 13V 11V 80 9V 1.1 70 VC E (sat) - Normalized 90 7V 60 50 40 30 5V VG E = 15V I C = 100A 1 0.9 I C = 50A 0.8 0.7 I C = 25A 20 0.6 10 0 0.5 0.5 1 1.5 2 2.5 3 3.5 25 50 75 100 125 150 TJ - Degrees Centigrade V CE - Volts Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter voltage Fig. 6. Input Admittance 5 200 T J = 25 C 4.5 175 150 I C - Amperes 4 VCE - Volts 3.5 V CE - Volts 100 I C - Amperes 5V 0 0 3.5 3 2.5 I C = 100A 2 100 75 T J = 125 C 50 50A 1.5 125 25 C -40 C 25 25A 1 0 5 6 7 8 9 10 11 V GE - Volts (c) 2005 IXYS All rights reserved 12 13 14 15 3.5 4 4.5 5 5.5 6 6.5 V GE - Volts 7 7.5 8 8.5 IXGK 60N60C2D1 IXGX 60N60C2D1 Fig. 7. Transconductance Fig. 8. Dependence of Eoff on RG 100 6 TJ = 125 C VGE = 15V VCE = 400V 90 T J = -40 C 25 C 70 E off - milliJoules g f s - Siemens 80 5 125 C 60 50 40 30 20 I C = 100A 4 I C = 75A 3 I C = 50A 2 I C = 25A 1 10 0 0 0 25 50 75 100 125 150 175 2 200 8 10 12 14 Fig. 9. Dependence of Eoff on IC Fig. 10. Dependence of Eoff on Temperature 16 5 R G = 2 Ohms R G = 10 Ohms - - - - - R G = 2 Ohms R G= 10 Ohms - - - - 4 VG E = 15V VC E = 400V E off - milliJoules 4 T J = 125 C 3 2 T J = 25 C 0 50 60 70 80 90 I C = 75A I C = 50A 0 40 VG E = 15V VC E = 400V 2 1 30 I C = 25A 25 100 50 I C - Amperes 75 100 125 TJ - Degrees Centigrade Fig. 11. Gate Charge Fig. 12. Capacitance 15 10000 Capacitance - pF VC E = 300V I C = 50A I G = 10mA 12 I C = 100A 3 1 20 VG E - Volts 6 R G - Ohms 5 E off - MilliJoules 4 I C - Amperes 9 6 f = 1M Hz C ies 1000 C oes 100 C res 3 0 10 0 20 40 60 80 100 120 140 160 Q G - nanoCoulombs IXYS reserves the right to change limits, test conditions, and dimensions. 0 5 10 15 20 25 V CE - Volts 30 35 40 IXGK 60N60C2D1 IXGX 60N60C2D1 Fig. 13. Maximum Transient Thermal Resistance 0.275 R( t h ) J C - C / W 0.25 0.225 0.2 0.175 0.15 0.125 0.1 0.075 0.05 0.025 1 10 100 Pulse Width - milliseconds (c) 2005 IXYS All rights reserved 1000 IXGK 60N60C2D1 IXGX 60N60C2D1 160 A 140 IF 4000 nC 120 60 IF=120A IF= 60A IF= 30A Qr TVJ=100C 80 TVJ= 100C VR = 300V A 3000 TVJ= 25C 100 80 TVJ= 100C VR = 300V IRM 2000 40 1000 20 IF=120A IF= 60A IF= 30A TVJ=150C 60 40 20 0 0 1 2 0 100 V 0 A/s 1000 -diF/dt VF Fig. 14. Forward current IF versus VF Fig. 15. Reverse recovery charge Qr versus -diF/dt 140 2.0 TVJ= 100C VR = 300V ns 130 trr 1.5 Kf 200 400 600 A/s 800 1000 -diF/dt Fig. 16. Peak reverse current IRM versus -diF/dt 20 1.6 V VFR 15 s tfr 1.2 tfr 120 IF=120A IF= 60A IF= 30A 110 1.0 0 VFR 10 0.8 5 0.4 IRM 100 0.5 Qr 90 0.0 80 0 40 80 120 C 160 0 0 200 400 600 TVJ 800 1000 A/s 0 200 400 -diF/dt Fig. 17. Dynamic parameters Qr, IRM versus TVJ Fig. 18. Recovery time trr versus -diF/dt 1 0.0 600 A/s 800 1000 diF/dt Fig. 19. Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: K/W i 0.1 ZthJC 1 2 3 0.01 Rthi (K/W) ti (s) 0.324 0.125 0.201 0.0052 0.0003 0.0385 Note: Fig. 15 through Fig. 20 show typical values 0.001 0.0001 0.00001 TVJ= 100C IF = 60A DSEP 60-06A 0.0001 0.001 0.01 0.1 Fig. 20. Transient thermal resistance junction to case IXYS reserves the right to change limits, test conditions, and dimensions. s t 1