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PNP High Voltage Amplifier
Features:
• Epitaxial planar die construction.
• Complementary NPN type available (MMBTA42).
• Ideal for medium power amplication and switching.
Applications:
• High voltage driver applications.
Maximum Rating: @ Ta = 25°C unless otherwise specied
Parameter Symbol Value Unit
Collector-Base Voltage VCBO -300
VCollector-Emitter Voltage VCEO -300
Emitter-Base Voltage VEBO -5
Collector Current (DC) IC-0.1 A
Collector Dissipation PC0.35 W
Junction and Storage Temperature Tj, Tstg -55 to -150 °C
Electrical Characteristics: @ Ta = 25°C unless otherwise specied
Symbol Parameter Test conditions Min. Max. Unit
V(BR)CBO Collector-base breakdown voltage IC = -100μA, IE = 0 -300
V(BR)CEO Collector-emitter breakdown voltage IC = -1mA, IB = 0 -300
V(BR)EBO Emitter-base breakdown voltage IE = -100μA, IC = 0 -5
ICBO Collector Cut-off Current IE = 0, VCB = -200V - -0.1
μA
IEBO Emitter Cut-off Current IC = 0, VEB = -3V - -0.1
hFE DC current gain
VCE = -10V, IC = -1mA
VCE = -10V, IC = -10mA
VCE = -10V, IC = -50 mA
25
40
25
VCE(sat) Collector-Emitter Saturation Voltage IC = -20mA, IB = -2mA - -0.5
V
VBE(sat) Base-Emitter Saturation Voltage IC = -20mA, IB = -2mA - -0.9
Cob Collector output capacitance VCB = -20V, f = 1MHz 6 pF
fTTransition Frequency IC = -10mA, VCE = -20V,
f = 100MHz 50 - MHz
Collector
3
2
Emitter
PNP
1
Base
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Page <2> V1.012/09/14
PNP High Voltage Amplifier
Typical Characteristics: @ Ta = 25°C unless otherwise specied
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Page <3> V1.012/09/14
PNP High Voltage Amplifier
Important Notice : This data sheet and its contents (the “Information”) belong to the members of the Premier Farnell group of companies (the “Group”) or are licensed to it. No licence is granted
for the use of it other than for information purposes in connection with the products to which it relates. No licence of any intellectual property rights is granted. The Information is subject to change
without notice and replaces all data sheets previously supplied. The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness, any
error in or omission from it or for any use made of it. Users of this data sheet should check for themselves the Information and the suitability of the products for their purpose and not make any
assumptions based on information included or omitted. Liability for loss or damage resulting from any reliance on the Information or use of it (including liability resulting from negligence or where the
Group was aware of the possibility of such loss or damage arising) is excluded. This will not operate to limit or restrict the Group’s liability for death or personal injury resulting from its negligence.
Multicomp is the registered trademark of the Group. © Premier Farnell plc 2012.
Part Number Table
Description Part Number
Transistor, Bipolar, PNP, -300V, -100mA, SOT-23 MMBTA92-7-F
Package Outline: SOT-23
Dim Min. Max.
A 2.85 2.95
B 1.25 1.35
C1 Typical
D 0.37 0.43
E 0.35 0.48
G1.85 1.95
H 0.02 0.1
J0.1 Typical
K 2.35 2.45
All Dimensions in mm
Soldering Footprint:
Dimensions : Millimetres