This is information on a product in full production.
May 2012 Doc ID 022063 Rev 3 1/182
1
STM32F415xx STM32F417xx
ARM Cortex-M4 32b MCU+FPU, 210DMIPS, up to 1MB Flash/192+4KB RAM,
crypto, USB OTG HS/FS, Ethernet, 17 TIMs, 3 ADCs, 15 comm. interfaces & camera
Datasheet − production data
Features
■Core: ARM 32-bit Cortex™-M4 CPU with FPU,
Adaptive real-time accelerator (ART
Accelerator™) allowing 0-wait state execution
from Flash memory, frequency up to 168 MHz,
memory protection unit, 210 DMIPS/
1.25 DMIPS/MHz (Dhrystone 2.1), and DSP
instructions
■Memories
– Up to 1 Mbyte of Flash memory
– Up to 192+4 Kbytes of SRAM including 64-
Kbyte of CCM (core coupled memory) data
RAM
– Flexible static memory controller
supporting Compact Flash, SRAM,
PSRAM, NOR and NAND memories
■LCD parallel interface, 8080/6800 modes
■Clock, reset and supply management
– 1.8 V to 3.6 V application supply and I/Os
– POR, PDR, PVD and BOR
– 4-to-26 MHz crystal oscillator
– Internal 16 MHz factory-trimmed RC (1%
accuracy)
– 32 kHz oscillator for RTC with calibration
– Internal 32 kHz RC with calibration
●Low power
– Sleep, Stop and Standby modes
–V
BAT supply for RTC, 20×32 bit backup
registers + optional 4 KB backup SRAM
■3×12-bit, 2.4 MSPS A/D converters: up to 24
channels and 7.2 MSPS in triple interleaved
mode
■2×12-bit D/A converters
■General-purpose DMA: 16-stream DMA
controller with FIFOs and burst support
■Up to 17 timers: up to twelve 16-bit and two 32-
bit timers up to 168 MHz, each with up to 4
IC/OC/PWM or pulse counter and quadrature
(incremental) encoder input
■Debug mode
– Serial wire debug (SWD) & JTAG interfaces
– Cortex-M4 Embedded Trace Macrocell™
■Up to 140 I/O ports with interrupt capability
– Up to 136 fast I/Os up to 84 MHz
– Up to 138 5 V-tolerant I/Os
■Up to 15 communication interfaces
– Up to 3 × I2C interfaces (SMBus/PMBus)
– Up to 4 USARTs/2 UARTs (10.5 Mbit/s,
ISO 7816 interface, LIN, IrDA, modem
control)
– Up to 3 SPIs (37.5 Mbits/s), 2 with muxed
full-duplex I2S to achieve audio class
accuracy via internal audio PLL or external
clock
– 2 × CAN interfaces (2.0B Active)
– SDIO interface
■Advanced connectivity
– USB 2.0 full-speed device/host/OTG
controller with on-chip PHY
– USB 2.0 high-speed/full-speed
device/host/OTG controller with dedicated
DMA, on-chip full-speed PHY and ULPI
– 10/100 Ethernet MAC with dedicated DMA:
supports IEEE 1588v2 hardware, MII/RMII
■8- to 14-bit parallel camera interface up to
54 Mbytes/s
■Cryptographic acceleration: hardware
acceleration for AES 128, 192, 256, Triple
DES, HASH (MD5, SHA-1), and HMAC
■True random number generator
■CRC calculation unit
■96-bit unique ID
■RTC: subsecond accuracy, hardware calendar
Table 1. Device summary
Reference Part number
STM32F415xx STM32F415RG, STM32F415VG, STM32F415ZG,
STM32F415OG
STM32F417xx STM32F417VG, STM32F417IG, STM32F417ZG,
STM32F417VE, STM32F417ZE, STM32F417IE
LQFP64 (10 × 10 mm)
LQFP100 (14 × 14 mm)
LQFP144 (20 × 20 mm)
FBGA
UFBGA176
(10 × 10 mm)
LQFP176 (24 × 24 mm)
WLCSP90
www.st.com
Contents STM32F415xx, STM32F417xx
2/182 Doc ID 022063 Rev 3
Contents
1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
2.1 Full compatibility throughout the family . . . . . . . . . . . . . . . . . . . . . . . . . . 15
2.2 Device overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
2.2.1 ARM® Cortex™-M4F core with embedded Flash and SRAM . . . . . . . . 19
2.2.2 Adaptive real-time memory accelerator (ART Accelerator™) . . . . . . . . 19
2.2.3 Memory protection unit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
2.2.4 Embedded Flash memory . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
2.2.5 CRC (cyclic redundancy check) calculation unit . . . . . . . . . . . . . . . . . . 20
2.2.6 Embedded SRAM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
2.2.7 Multi-AHB bus matrix . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
2.2.8 DMA controller (DMA) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
2.2.9 Flexible static memory controller (FSMC) . . . . . . . . . . . . . . . . . . . . . . . 22
2.2.10 Nested vectored interrupt controller (NVIC) . . . . . . . . . . . . . . . . . . . . . . 22
2.2.11 External interrupt/event controller (EXTI) . . . . . . . . . . . . . . . . . . . . . . . 22
2.2.12 Clocks and startup . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
2.2.13 Boot modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
2.2.14 Power supply schemes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
2.2.15 Power supply supervisor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
2.2.16 Voltage regulator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
2.2.17 Real-time clock (RTC), backup SRAM and backup registers . . . . . . . . 28
2.2.18 Low-power modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
2.2.19 VBAT operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
2.2.20 Timers and watchdogs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
2.2.21 Inter-integrated circuit interface (I²C) . . . . . . . . . . . . . . . . . . . . . . . . . . 32
2.2.22 Universal synchronous/asynchronous receiver transmitters (USART) . 32
2.2.23 Serial peripheral interface (SPI) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
2.2.24 Inter-integrated sound (I2S) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
2.2.25 Audio PLL (PLLI2S) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
2.2.26 Secure digital input/output interface (SDIO) . . . . . . . . . . . . . . . . . . . . . 34
2.2.27 Ethernet MAC interface with dedicated DMA and IEEE 1588 support . 34
2.2.28 Controller area network (bxCAN) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
2.2.29 Universal serial bus on-the-go full-speed (OTG_FS) . . . . . . . . . . . . . . . 35
STM32F415xx, STM32F417xx Contents
Doc ID 022063 Rev 3 3/182
2.2.30 Universal serial bus on-the-go high-speed (OTG_HS) . . . . . . . . . . . . . 35
2.2.31 Digital camera interface (DCMI) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
2.2.32 Cryptographic acceleration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
2.2.33 Random number generator (RNG) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
2.2.34 General-purpose input/outputs (GPIOs) . . . . . . . . . . . . . . . . . . . . . . . . 37
2.2.35 Analog-to-digital converters (ADCs) . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
2.2.36 Temperature sensor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
2.2.37 Digital-to-analog converter (DAC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
2.2.38 Serial wire JTAG debug port (SWJ-DP) . . . . . . . . . . . . . . . . . . . . . . . . . 38
2.2.39 Embedded Trace Macrocell™ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
3 Pinouts and pin description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40
4 Memory mapping . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65
5 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70
5.1 Parameter conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70
5.1.1 Minimum and maximum values . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70
5.1.2 Typical values . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70
5.1.3 Typical curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70
5.1.4 Loading capacitor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70
5.1.5 Pin input voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70
5.1.6 Power supply scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 71
5.1.7 Current consumption measurement . . . . . . . . . . . . . . . . . . . . . . . . . . . 72
5.2 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 72
5.3 Operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 73
5.3.1 General operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 73
5.3.2 VCAP1/VCAP2 external capacitor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 76
5.3.3 Operating conditions at power-up / power-down (regulator ON) . . . . . . 76
5.3.4 Operating conditions at power-up / power-down (regulator OFF) . . . . . 76
5.3.5 Embedded reset and power control block characteristics . . . . . . . . . . . 77
5.3.6 Supply current characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 78
5.3.7 Wakeup time from low-power mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . 91
5.3.8 External clock source characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . 92
5.3.9 Internal clock source characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . 96
5.3.10 PLL characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 97
5.3.11 PLL spread spectrum clock generation (SSCG) characteristics . . . . . 100
Contents STM32F415xx, STM32F417xx
4/182 Doc ID 022063 Rev 3
5.3.12 Memory characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 101
5.3.13 EMC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 103
5.3.14 Absolute maximum ratings (electrical sensitivity) . . . . . . . . . . . . . . . . 105
5.3.15 I/O current injection characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . 106
5.3.16 I/O port characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 107
5.3.17 NRST pin characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 111
5.3.18 TIM timer characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 112
5.3.19 Communications interfaces . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 113
5.3.20 12-bit ADC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 126
5.3.21 Temperature sensor characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . 131
5.3.22 VBAT monitoring characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 131
5.3.23 Embedded reference voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 131
5.3.24 DAC electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 132
5.3.25 FSMC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 134
5.3.26 Camera interface (DCMI) timing specifications . . . . . . . . . . . . . . . . . . 152
5.3.27 SD/SDIO MMC card host interface (SDIO) characteristics . . . . . . . . . 152
5.3.28 RTC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 153
6 Package characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 154
6.1 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 154
6.2 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 165
7 Part numbering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 166
Appendix A Application block diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 167
A.1 Main applications versus package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 167
A.2 Application example with regulator OFF . . . . . . . . . . . . . . . . . . . . . . . . . 168
A.3 USB OTG full speed (FS) interface solutions . . . . . . . . . . . . . . . . . . . . . 169
A.4 USB OTG high speed (HS) interface solutions . . . . . . . . . . . . . . . . . . . . 171
A.5 Complete audio player solutions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 172
A.6 Ethernet interface solutions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 175
8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 177
STM32F415xx, STM32F417xx List of tables
Doc ID 022063 Rev 3 5/182
List of tables
Table 1. Device summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Table 2. STM32F415xx and STM32F417xx: features and peripheral counts. . . . . . . . . . . . . . . . . . 13
Table 3. Timer feature comparison. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
Table 4. USART feature comparison . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
Table 5. Legend/abbreviations used in the pinout table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45
Table 6. STM32F41x pin and ball definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47
Table 7. FSMC pin definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 58
Table 8. Alternate function mapping . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60
Table 9. STM32F41x register boundary addresses . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 66
Table 10. Voltage characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 72
Table 11. Current characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 73
Table 12. Thermal characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 73
Table 13. General operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 73
Table 14. Limitations depending on the operating power supply range . . . . . . . . . . . . . . . . . . . . . . . 75
Table 15. VCAP1/VCAP2 operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 76
Table 16. Operating conditions at power-up / power-down (regulator ON) . . . . . . . . . . . . . . . . . . . . 76
Table 17. Operating conditions at power-up / power-down (regulator OFF). . . . . . . . . . . . . . . . . . . . 76
Table 18. Embedded reset and power control block characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 77
Table 19. Typical and maximum current consumption in Run mode, code with data processing
running from Flash memory (ART accelerator disabled) . . . . . . . . . . . . . . . . . . . . . . . . . . 79
Table 20. Typical and maximum current consumption in Run mode, code with data processing
running from Flash memory (ART accelerator enabled) or RAM . . . . . . . . . . . . . . . . . . . 80
Table 21. Typical and maximum current consumption in Sleep mode . . . . . . . . . . . . . . . . . . . . . . . . 83
Table 22. Typical and maximum current consumptions in Stop mode . . . . . . . . . . . . . . . . . . . . . . . . 84
Table 23. Typical and maximum current consumptions in Standby mode . . . . . . . . . . . . . . . . . . . . . 84
Table 24. Typical and maximum current consumptions in VBAT mode. . . . . . . . . . . . . . . . . . . . . . . . 85
Table 25. Switching output I/O current consumption . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 88
Table 26. Peripheral current consumption . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 89
Table 27. Low-power mode wakeup timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 91
Table 28. High-speed external user clock characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 92
Table 29. Low-speed external user clock characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 92
Table 30. HSE 4-26 MHz oscillator characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 94
Table 31. LSE oscillator characteristics (fLSE = 32.768 kHz) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 95
Table 32. HSI oscillator characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 96
Table 33. LSI oscillator characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 96
Table 34. Main PLL characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 97
Table 35. PLLI2S (audio PLL) characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 98
Table 36. SSCG parameters constraint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100
Table 37. Flash memory characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 101
Table 38. Flash memory programming. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 102
Table 39. Flash memory programming with VPP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 102
Table 40. Flash memory endurance and data retention . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 103
Table 41. EMS characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 104
Table 42. EMI characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 105
Table 43. ESD absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 105
Table 44. Electrical sensitivities . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 106
Table 45. I/O current injection susceptibility . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 106
Table 46. I/O static characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 107
List of tables STM32F415xx, STM32F417xx
6/182 Doc ID 022063 Rev 3
Table 47. Output voltage characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 108
Table 48. I/O AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 109
Table 49. NRST pin characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 111
Table 50. Characteristics of TIMx connected to the APB1 domain . . . . . . . . . . . . . . . . . . . . . . . . . 112
Table 51. Characteristics of TIMx connected to the APB2 domain . . . . . . . . . . . . . . . . . . . . . . . . . 113
Table 52. I2C characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 114
Table 53. SCL frequency (fPCLK1= 42 MHz.,VDD = 3.3 V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 115
Table 54. SPI characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 116
Table 55. I2S characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 119
Table 56. USB OTG FS startup time . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 121
Table 57. USB OTG FS DC electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 121
Table 58. USB OTG FS electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 122
Table 59. USB FS clock timing parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 122
Table 60. USB HS DC electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 123
Table 61. USB HS clock timing parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 123
Table 62. ULPI timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 124
Table 63. Ethernet DC electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 124
Table 64. Dynamics characteristics: Ethernet MAC signals for SMI. . . . . . . . . . . . . . . . . . . . . . . . . 124
Table 65. Dynamics characteristics: Ethernet MAC signals for RMII . . . . . . . . . . . . . . . . . . . . . . . . 125
Table 66. Dynamics characteristics: Ethernet MAC signals for MII . . . . . . . . . . . . . . . . . . . . . . . . . 126
Table 67. ADC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 126
Table 68. ADC accuracy at fADC = 30 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 128
Table 69. TS characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 131
Table 70. VBAT monitoring characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 131
Table 71. Embedded internal reference voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 131
Table 72. DAC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 132
Table 73. Asynchronous non-multiplexed SRAM/PSRAM/NOR read timings . . . . . . . . . . . . . . . . . 135
Table 74. Asynchronous non-multiplexed SRAM/PSRAM/NOR write timings . . . . . . . . . . . . . . . . . 136
Table 75. Asynchronous multiplexed PSRAM/NOR read timings. . . . . . . . . . . . . . . . . . . . . . . . . . . 137
Table 76. Asynchronous multiplexed PSRAM/NOR write timings . . . . . . . . . . . . . . . . . . . . . . . . . . 138
Table 77. Synchronous multiplexed NOR/PSRAM read timings . . . . . . . . . . . . . . . . . . . . . . . . . . . 140
Table 78. Synchronous multiplexed PSRAM write timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 141
Table 79. Synchronous non-multiplexed NOR/PSRAM read timings . . . . . . . . . . . . . . . . . . . . . . . . 142
Table 80. Synchronous non-multiplexed PSRAM write timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . 143
Table 81. Switching characteristics for PC Card/CF read and write cycles
in attribute/common space. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 148
Table 82. Switching characteristics for PC Card/CF read and write cycles
in I/O space . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 149
Table 83. Switching characteristics for NAND Flash read cycles . . . . . . . . . . . . . . . . . . . . . . . . . . . 151
Table 84. Switching characteristics for NAND Flash write cycles. . . . . . . . . . . . . . . . . . . . . . . . . . . 152
Table 85. DCMI characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 152
Table 86. SD / MMC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 153
Table 87. RTC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 153
Table 88. WLCSP90 - 0.400 mm pitch wafer level chip size package mechanical data . . . . . . . . . 155
Table 89. LQFP64 – 10 x 10 mm 64 pin low-profile quad flat package mechanical data. . . . . . . . . 156
Table 90. LQPF100 – 14 x 14 mm 100-pin low-profile quad flat package mechanical data. . . . . . . 158
Table 91. LQFP144, 20 x 20 mm, 144-pin low-profile quad flat package mechanical data . . . . . . . 160
Table 92. UFBGA176+25 - ultra thin fine pitch ball grid array 10 × 10 × 0.6 mm
mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 162
Table 93. LQFP176, 24 x 24 mm, 176-pin low-profile quad flat package mechanical data . . . . . . . 163
Table 94. Package thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 165
Table 95. Ordering information scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 166
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Table 96. Main applications versus package for STM32F417xx microcontrollers . . . . . . . . . . . . . . 167
Table 97. Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 177
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List of figures
Figure 1. Compatible board design between STM32F10xx/STM32F4xx for LQFP64 . . . . . . . . . . . . 15
Figure 2. Compatible board design STM32F10xx/STM32F2xx/STM32F4xx
for LQFP100 package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Figure 3. Compatible board design between STM32F10xx/STM32F2xx/STM32F4xx
for LQFP144 package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Figure 4. Compatible board design between STM32F2xx and STM32F4xx
for LQFP176 package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Figure 5. STM32F41x block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Figure 6. Multi-AHB matrix. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Figure 7. Regulator ON/internal reset OFF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Figure 8. Startup in regulator OFF mode: slow VDD slope
- power-down reset risen after VCAP_1/VCAP_2 stabilization . . . . . . . . . . . . . . . . . . . . . . . . 27
Figure 9. Startup in regulator OFF mode: fast VDD slope
- power-down reset risen before VCAP_1/VCAP_2 stabilization . . . . . . . . . . . . . . . . . . . . . . 27
Figure 10. STM32F41x LQFP64 pinout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40
Figure 11. STM32F41x LQFP100 pinout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41
Figure 12. STM32F41x LQFP144 pinout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42
Figure 13. STM32F41x LQFP176 pinout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43
Figure 14. STM32F41x UFBGA176 ballout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44
Figure 15. STM32F41x WLCSP90 ballout. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45
Figure 16. STM32F41x memory map . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65
Figure 17. Pin loading conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70
Figure 18. Pin input voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70
Figure 19. Power supply scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 71
Figure 20. Current consumption measurement scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 72
Figure 21. External capacitor CEXT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 76
Figure 22. Typical current consumption vs temperature, Run mode, code with data
processing running from Flash (ART accelerator ON) or RAM, and peripherals OFF . . . . 81
Figure 23. Typical current consumption vs temperature, Run mode, code with data
processing running from Flash (ART accelerator ON) or RAM, and peripherals ON . . . . . 81
Figure 24. Typical current consumption vs temperature, Run mode, code with data
processing running from Flash (ART accelerator OFF) or RAM, and peripherals OFF . . . 82
Figure 25. Typical current consumption vs temperature, Run mode, code with data
processing running from Flash (ART accelerator OFF) or RAM, and peripherals ON . . . . 82
Figure 26. Typical VBAT current consumption (LSE and RTC ON/backup RAM OFF) . . . . . . . . . . . . 85
Figure 27. Typical VBAT current consumption (LSE and RTC ON/backup RAM ON) . . . . . . . . . . . . . 86
Figure 28. High-speed external clock source AC timing diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . 93
Figure 29. Low-speed external clock source AC timing diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 93
Figure 30. Typical application with an 8 MHz crystal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 94
Figure 31. Typical application with a 32.768 kHz crystal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 95
Figure 32. ACCLSI versus temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 97
Figure 33. PLL output clock waveforms in center spread mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . 101
Figure 34. PLL output clock waveforms in down spread mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 101
Figure 35. I/O AC characteristics definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 110
Figure 36. Recommended NRST pin protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 111
Figure 37. I2C bus AC waveforms and measurement circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 115
Figure 38. SPI timing diagram - slave mode and CPHA = 0 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 117
Figure 39. SPI timing diagram - slave mode and CPHA = 1(1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 117
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Figure 40. SPI timing diagram - master mode(1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 118
Figure 41. I2S slave timing diagram (Philips protocol)(1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120
Figure 42. I2S master timing diagram (Philips protocol)(1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120
Figure 43. USB OTG FS timings: definition of data signal rise and fall time . . . . . . . . . . . . . . . . . . . 122
Figure 44. ULPI timing diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 123
Figure 45. Ethernet SMI timing diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 124
Figure 46. Ethernet RMII timing diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125
Figure 47. Ethernet MII timing diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125
Figure 48. ADC accuracy characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 129
Figure 49. Typical connection diagram using the ADC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 129
Figure 50. Power supply and reference decoupling (VREF+ not connected to VDDA). . . . . . . . . . . . . 130
Figure 51. Power supply and reference decoupling (VREF+ connected to VDDA). . . . . . . . . . . . . . . . 130
Figure 52. 12-bit buffered /non-buffered DAC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 134
Figure 53. Asynchronous non-multiplexed SRAM/PSRAM/NOR read waveforms . . . . . . . . . . . . . . 135
Figure 54. Asynchronous non-multiplexed SRAM/PSRAM/NOR write waveforms . . . . . . . . . . . . . . 136
Figure 55. Asynchronous multiplexed PSRAM/NOR read waveforms. . . . . . . . . . . . . . . . . . . . . . . . 137
Figure 56. Asynchronous multiplexed PSRAM/NOR write waveforms . . . . . . . . . . . . . . . . . . . . . . . 138
Figure 57. Synchronous multiplexed NOR/PSRAM read timings . . . . . . . . . . . . . . . . . . . . . . . . . . . 139
Figure 58. Synchronous multiplexed PSRAM write timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 141
Figure 59. Synchronous non-multiplexed NOR/PSRAM read timings . . . . . . . . . . . . . . . . . . . . . . . . 142
Figure 60. Synchronous non-multiplexed PSRAM write timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . 143
Figure 61. PC Card/CompactFlash controller waveforms for common memory read access . . . . . . 144
Figure 62. PC Card/CompactFlash controller waveforms for common memory write access . . . . . . 145
Figure 63. PC Card/CompactFlash controller waveforms for attribute memory read
access. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 146
Figure 64. PC Card/CompactFlash controller waveforms for attribute memory write
access. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 147
Figure 65. PC Card/CompactFlash controller waveforms for I/O space read access . . . . . . . . . . . . 147
Figure 66. PC Card/CompactFlash controller waveforms for I/O space write access . . . . . . . . . . . . 148
Figure 67. NAND controller waveforms for read access . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150
Figure 68. NAND controller waveforms for write access . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150
Figure 69. NAND controller waveforms for common memory read access . . . . . . . . . . . . . . . . . . . . 151
Figure 70. NAND controller waveforms for common memory write access. . . . . . . . . . . . . . . . . . . . 151
Figure 71. SDIO high-speed mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 152
Figure 72. SD default mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 153
Figure 73. WLCSP90 - 0.400 mm pitch wafer level chip size package outline . . . . . . . . . . . . . . . . . 155
Figure 74. LQFP64 – 10 x 10 mm 64 pin low-profile quad flat package outline . . . . . . . . . . . . . . . . 156
Figure 75. LQFP64 recommended footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 157
Figure 76. LQFP100, 14 x 14 mm 100-pin low-profile quad flat package outline . . . . . . . . . . . . . . . 158
Figure 77. LQFP100 recommended footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 159
Figure 78. LQFP144, 20 x 20 mm, 144-pin low-profile quad flat package outline . . . . . . . . . . . . . . . 160
Figure 79. LQFP144 recommended footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 161
Figure 80. UFBGA176+25 - ultra thin fine pitch ball grid array 10 × 10 × 0.6 mm,
package outline. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 162
Figure 81. LQFP176 24 x 24 mm, 176-pin low-profile quad flat package outline . . . . . . . . . . . . . . . 163
Figure 82. LQFP176 recommended footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 164
Figure 83. Regulator OFF/internal reset ON . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 168
Figure 84. Regulator OFF/internal reset OFF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 168
Figure 85. USB controller configured as peripheral-only and used
in Full speed mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 169
Figure 86. USB controller configured as host-only and used in full speed mode. . . . . . . . . . . . . . . . 169
Figure 87. USB controller configured in dual mode and used in full speed mode . . . . . . . . . . . . . . . 170
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10/182 Doc ID 022063 Rev 3
Figure 88. USB controller configured as peripheral, host, or dual-mode
and used in high speed mode. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 171
Figure 89. Complete audio player solution 1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 172
Figure 90. Complete audio player solution 2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 172
Figure 91. Audio player solution using PLL, PLLI2S, USB and 1 crystal . . . . . . . . . . . . . . . . . . . . . . 173
Figure 92. Audio PLL (PLLI2S) providing accurate I2S clock . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 173
Figure 93. Master clock (MCK) used to drive the external audio DAC. . . . . . . . . . . . . . . . . . . . . . . . 174
Figure 94. Master clock (MCK) not used to drive the external audio DAC. . . . . . . . . . . . . . . . . . . . . 174
Figure 95. MII mode using a 25 MHz crystal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 175
Figure 96. RMII with a 50 MHz oscillator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 175
Figure 97. RMII with a 25 MHz crystal and PHY with PLL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 176
STM32F415xx, STM32F417xx Introduction
Doc ID 022063 Rev 3 11/182
1 Introduction
This datasheet provides the description of the STM32F415xx and STM32F417xx lines of
microcontrollers. For more details on the whole STMicroelectronics STM32™ family, please
refer to Section 2.1: Full compatibility throughout the family.
The STM32F415xx and STM32F417xx datasheet should be read in conjunction with the
STM32F4xx reference manual.
For information on programming, erasing and protection of the internal Flash memory,
please refer to the STM32F4xx Flash programming manual (PM0081).
The reference and Flash programming manuals are both available from the
STMicroelectronics website www.st.com.
For information on the Cortex™-M4 core please refer to the Cortex™-M4 Technical
Reference Manual, available from the www.arm.com website at the following address:
http://infocenter.arm.com/help/index.jsp?topic=/com.arm.doc.ddi0439b/.
Description STM32F415xx, STM32F417xx
12/182 Doc ID 022063 Rev 3
2 Description
The STM32F415xx and STM32F417xx family is based on the high-performance ARM®
Cortex™-M4 32-bit RISC core operating at a frequency of up to 168 MHz. The Cortex-M4
core features a Floating point unit (FPU) single precision which supports all ARM single-
precision data-processing instructions and data types. It also implements a full set of DSP
instructions and a memory protection unit (MPU) which enhances application security. The
Cortex-M4 core with FPU will be referred to as Cortex-M4F throughout this document.
The STM32F415xx and STM32F417xx family incorporates high-speed embedded
memories (Flash memory up to 1 Mbyte, up to 192 Kbytes of SRAM), up to 4 Kbytes of
backup SRAM, and an extensive range of enhanced I/Os and peripherals connected to two
APB buses, three AHB buses and a 32-bit multi-AHB bus matrix.
All devices offer three 12-bit ADCs, two DACs, a low-power RTC, twelve general-purpose
16-bit timers including two PWM timers for motor control, two general-purpose 32-bit timers.
a true random number generator (RNG), and a cryptographic acceleration cell. They also
feature standard and advanced communication interfaces.
●Up to three I2Cs
●Three SPIs, two I2Ss full duplex. To achieve audio class accuracy, the I2S peripherals
can be clocked via a dedicated internal audio PLL or via an external clock to allow
synchronization.
●Four USARTs plus two UARTs
●An USB OTG full-speed and a USB OTG high-speed with full-speed capability (with the
ULPI),
●Two C A N s
●An SDIO/MMC interface
●Ethernet and the camera interface available on STM32F417xx devices only.
New advanced peripherals include an SDIO, an enhanced flexible static memory control
(FSMC) interface (for devices offered in packages of 100 pins and more), a camera interface
for CMOS sensors and a cryptographic acceleration cell. Refer to Table 2: STM32F415xx
and STM32F417xx: features and peripheral counts for the list of peripherals available on
each part number.
The STM32F415xx and STM32F417xx family operates in the –40 to +105 °C temperature
range from a 1.8 to 3.6 V power supply. The supply voltage can drop to 1.7 V when the
device operates in the 0 to 70 °C temperature range and an inverted reset signal is applied
to PDR_ON. A comprehensive set of power-saving mode allows the design of low-power
applications.
The STM32F415xx and STM32F417xx family offers devices in various packages ranging
from 64 pins to 176 pins. The set of included peripherals changes with the device chosen.
STM32F415xx, STM32F417xx Description
Doc ID 022063 Rev 3 13/182
These features make the STM32F415xx and STM32F417xx microcontroller family suitable for a wide range of applications:
●Motor drive and application control
●Medical equipment
●Industrial applications: PLC, inverters, circuit breakers
●Printers, and scanners
●Alarm systems, video intercom, and HVAC
●Home audio appliances
Figure 5 shows the general block diagram of the device family.
Table 2. STM32F415xx and STM32F417xx: features and peripheral counts
Peripherals STM32F415RG STM32F415OG STM32F415VG STM32F415ZG STM32F417Vx STM32F417Zx STM32F417Ix
Flash memory in Kbytes 1024 512 1024 512 1024 512 1024
SRAM in Kbytes System 192(112+16+64)
Backup 4
FSMC memory controller No Yes(1)
Ethernet No Yes
Timers
General-purpose 10
Advanced-control 2
Basic 2
IWDG Ye s
WWDG Ye s
RTC Ye s
Random number generator Yes
Communication
interfaces
SPI / I2S 3/2 (full duplex)(2)
I2C 3
USART/UART 4/2
USB OTG FS Yes
USB OTG HS Yes
CAN 2
SDIO Ye s
Description STM32F415xx, STM32F417xx
14/182 Doc ID 022063 Rev 3
Camera interface No Yes
Cryptography Ye s
GPIOs 51 72 82 114 82 114 140
12-bit ADC
Number of channels
3
16 13 16 24 16 24 24
12-bit DAC
Number of channels
Ye s
2
Maximum CPU frequency 168 MHz
Operating voltage 1.8 to 3.6 V(3)
Operating temperatures Ambient temperatures: –40 to +85 °C /–40 to +105 °C
Junction temperature: –40 to + 125 °C
Package LQFP64 WLCSP90 LQFP100 LQFP144 LQFP100 LQFP144 UFBGA176
LQFP176
1. For the LQFP100 package, only FSMC Bank1 or Bank2 are available. Bank1 can only support a multiplexed NOR/PSRAM memory using the NE1 Chip
Select. Bank2 can only support a 16- or 8-bit NAND Flash memory using the NCE2 Chip Select. The interrupt line cannot be used since Port G is not
available in this package.
2. The SPI2 and SPI3 interfaces give the flexibility to work in an exclusive way in either the SPI mode or the I2S audio mode.
3. VDD/VDDA minimum value of 1.7 V is obtained when the device operates in the 0 to 70 °C temperature range and an inverted reset signal is applied to
PDR_ON.
Table 2. STM32F415xx and STM32F417xx: features and peripheral counts (continued)
Peripherals STM32F415RG STM32F415OG STM32F415VG STM32F415ZG STM32F417Vx STM32F417Zx STM32F417Ix
STM32F415xx, STM32F417xx Description
Doc ID 022063 Rev 3 15/182
2.1 Full compatibility throughout the family
The STM32F415xx and STM32F417xx are part of the STM32F4 family. They are fully pin-
to-pin, software and feature compatible with the STM32F2xx devices, allowing the user to
try different memory densities, peripherals, and performances (FPU, higher frequency) for a
greater degree of freedom during the development cycle.
The STM32F415xx and STM32F417xx devices maintain a close compatibility with the
whole STM32F10xxx family. All functional pins are pin-to-pin compatible. The
STM32F415xx and STM32F417xx, however, are not drop-in replacements for the
STM32F10xxx devices: the two families do not have the same power scheme, and so their
power pins are different. Nonetheless, transition from the STM32F10xxx to the STM32F41x
family remains simple as only a few pins are impacted.
Figure 4, Figure 3, Figure 2, and Figure 1 give compatible board designs between the
STM32F41x, STM32F2xxx, and STM32F10xxx families.
Figure 1. Compatible board design between STM32F10xx/STM32F4xx for LQFP64
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Description STM32F415xx, STM32F417xx
16/182 Doc ID 022063 Rev 3
Figure 2. Compatible board design STM32F10xx/STM32F2xx/STM32F4xx
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Figure 3. Compatible board design between STM32F10xx/STM32F2xx/STM32F4xx
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STM32F415xx, STM32F417xx Description
Doc ID 022063 Rev 3 17/182
Figure 4. Compatible board design between STM32F2xx and STM32F4xx
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Description STM32F415xx, STM32F417xx
18/182 Doc ID 022063 Rev 3
2.2 Device overview
Figure 5. STM32F41x block diagram
1. The timers connected to APB2 are clocked from TIMxCLK up to 168 MHz, while the timers connected to APB1 are clocked
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STM32F415xx, STM32F417xx Description
Doc ID 022063 Rev 3 19/182
from TIMxCLK up to 84 MHz.
2. The camera interface and ethernet are available only on STM32F417xx devices.
2.2.1 ARM® Cortex™-M4F core with embedded Flash and SRAM
The ARM Cortex-M4F processor is the latest generation of ARM processors for embedded
systems. It was developed to provide a low-cost platform that meets the needs of MCU
implementation, with a reduced pin count and low-power consumption, while delivering
outstanding computational performance and an advanced response to interrupts.
The ARM Cortex-M4F 32-bit RISC processor features exceptional code-efficiency,
delivering the high-performance expected from an ARM core in the memory size usually
associated with 8- and 16-bit devices.
The processor supports a set of DSP instructions which allow efficient signal processing
and complex algorithm execution.
Its single precision FPU (floating point unit) speeds up software development by using
metalanguage development tools, while avoiding saturation.
The STM32F415xx and STM32F417xx family is compatible with all ARM tools and software.
Figure 5 shows the general block diagram of the STM32F41x family.
Note: Cortex-M4F is binary compatible with Cortex-M3.
2.2.2 Adaptive real-time memory accelerator (ART Accelerator™)
The ART Accelerator™ is a memory accelerator which is optimized for STM32 industry-
standard ARM® Cortex™-M4F processors. It balances the inherent performance advantage
of the ARM Cortex-M4F over Flash memory technologies, which normally requires the
processor to wait for the Flash memory at higher frequencies.
To release the processor full 210 DMIPS performance at this frequency, the accelerator
implements an instruction prefetch queue and branch cache, which increases program
execution speed from the 128-bit Flash memory. Based on CoreMark benchmark, the
performance achieved thanks to the ART accelerator is equivalent to 0 wait state program
execution from Flash memory at a CPU frequency up to 168 MHz.
2.2.3 Memory protection unit
The memory protection unit (MPU) is used to manage the CPU accesses to memory to
prevent one task to accidentally corrupt the memory or resources used by any other active
task. This memory area is organized into up to 8 protected areas that can in turn be divided
up into 8 subareas. The protection area sizes are between 32 bytes and the whole 4
gigabytes of addressable memory.
The MPU is especially helpful for applications where some critical or certified code has to be
protected against the misbehavior of other tasks. It is usually managed by an RTOS (real-
time operating system). If a program accesses a memory location that is prohibited by the
MPU, the RTOS can detect it and take action. In an RTOS environment, the kernel can
dynamically update the MPU area setting, based on the process to be executed.
The MPU is optional and can be bypassed for applications that do not need it.
Description STM32F415xx, STM32F417xx
20/182 Doc ID 022063 Rev 3
2.2.4 Embedded Flash memory
The STM32F41x devices embed a Flash memory of 512 Kbytes or 1 Mbytes available for
storing programs and data.
2.2.5 CRC (cyclic redundancy check) calculation unit
The CRC (cyclic redundancy check) calculation unit is used to get a CRC code from a 32-bit
data word and a fixed generator polynomial.
Among other applications, CRC-based techniques are used to verify data transmission or
storage integrity. In the scope of the EN/IEC 60335-1 standard, they offer a means of
verifying the Flash memory integrity. The CRC calculation unit helps compute a software
signature during runtime, to be compared with a reference signature generated at link-time
and stored at a given memory location.
2.2.6 Embedded SRAM
All STM32F41x products embed:
●Up to 192 Kbytes of system SRAM including 64 Kbytes of CCM (core coupled memory)
data RAM
RAM memory is accessed (read/write) at CPU clock speed with 0 wait states.
●4 Kbytes of backup SRAM
This area is accessible only from the CPU. Its content is protected against possible
unwanted write accesses, and is retained in Standby or VBAT mode.
2.2.7 Multi-AHB bus matrix
The 32-bit multi-AHB bus matrix interconnects all the masters (CPU, DMAs, Ethernet, USB
HS) and the slaves (Flash memory, RAM, FSMC, AHB and APB peripherals) and ensures a
seamless and efficient operation even when several high-speed peripherals work
simultaneously.
STM32F415xx, STM32F417xx Description
Doc ID 022063 Rev 3 21/182
Figure 6. Multi-AHB matrix
2.2.8 DMA controller (DMA)
The devices feature two general-purpose dual-port DMAs (DMA1 and DMA2) with 8
streams each. They are able to manage memory-to-memory, peripheral-to-memory and
memory-to-peripheral transfers. They feature dedicated FIFOs for APB/AHB peripherals,
support burst transfer and are designed to provide the maximum peripheral bandwidth
(AHB/APB).
The two DMA controllers support circular buffer management, so that no specific code is
needed when the controller reaches the end of the buffer. The two DMA controllers also
have a double buffering feature, which automates the use and switching of two memory
buffers without requiring any special code.
Each stream is connected to dedicated hardware DMA requests, with support for software
trigger on each stream. Configuration is made by software and transfer sizes between
source and destination are independent.
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Description STM32F415xx, STM32F417xx
22/182 Doc ID 022063 Rev 3
The DMA can be used with the main peripherals:
●SPI and I2S
●I2C
●USART
●General-purpose, basic and advanced-control timers TIMx
●DAC
●SDIO
●Cryptographic acceleration
●Camera interface (DCMI)
●ADC.
2.2.9 Flexible static memory controller (FSMC)
The FSMC is embedded in the STM32F415xx and STM32F417xx family. It has four Chip
Select outputs supporting the following modes: PCCard/Compact Flash, SRAM, PSRAM,
NOR Flash and NAND Flash.
Functionality overview:
●Write FIFO
●Maximum FSMC_CLK frequency for synchronous accesses is 60 MHz.
LCD parallel interface
The FSMC can be configured to interface seamlessly with most graphic LCD controllers. It
supports the Intel 8080 and Motorola 6800 modes, and is flexible enough to adapt to
specific LCD interfaces. This LCD parallel interface capability makes it easy to build cost-
effective graphic applications using LCD modules with embedded controllers or high
performance solutions using external controllers with dedicated acceleration.
2.2.10 Nested vectored interrupt controller (NVIC)
The STM32F415xx and STM32F417xx embed a nested vectored interrupt controller able to
manage 16 priority levels, and handle up to 82 maskable interrupt channels plus the 16
interrupt lines of the Cortex™-M4F.
●Closely coupled NVIC gives low-latency interrupt processing
●Interrupt entry vector table address passed directly to the core
●Allows early processing of interrupts
●Processing of late arriving, higher-priority interrupts
●Support tail chaining
●Processor state automatically saved
●Interrupt entry restored on interrupt exit with no instruction overhead
This hardware block provides flexible interrupt management features with minimum interrupt
latency.
2.2.11 External interrupt/event controller (EXTI)
The external interrupt/event controller consists of 23 edge-detector lines used to generate
interrupt/event requests. Each line can be independently configured to select the trigger
STM32F415xx, STM32F417xx Description
Doc ID 022063 Rev 3 23/182
event (rising edge, falling edge, both) and can be masked independently. A pending register
maintains the status of the interrupt requests. The EXTI can detect an external line with a
pulse width shorter than the Internal APB2 clock period. Up to 140 GPIOs can be connected
to the 16 external interrupt lines.
2.2.12 Clocks and startup
On reset the 16 MHz internal RC oscillator is selected as the default CPU clock. The
16 MHz internal RC oscillator is factory-trimmed to offer 1% accuracy over the full
temperature range. The application can then select as system clock either the RC oscillator
or an external 4-26 MHz clock source. This clock can be monitored for failure. If a failure is
detected, the system automatically switches back to the internal RC oscillator and a
software interrupt is generated (if enabled). This clock source is input to a PLL thus allowing
to increase the frequency up to 168 MHz. Similarly, full interrupt management of the PLL
clock entry is available when necessary (for example if an indirectly used external oscillator
fails).
Several prescalers allow the configuration of the three AHB buses, the high-speed APB
(APB2) and the low-speed APB (APB1) domains. The maximum frequency of the three AHB
buses is 168 MHz while the maximum frequency of the high-speed APB domains is 84 MHz.
The maximum allowed frequency of the low-speed APB domain is 42 MHz.
The devices embed a dedicated PLL (PLLI2S) which allows to achieve audio class
performance. In this case, the I2S master clock can generate all standard sampling
frequencies from 8 kHz to 192 kHz.
2.2.13 Boot modes
At startup, boot pins are used to select one out of three boot options:
●Boot from user Flash
●Boot from system memory
●Boot from embedded SRAM
The boot loader is located in system memory. It is used to reprogram the Flash memory by
using USART1 (PA9/PA10), USART3 (PC10/PC11 or PB10/PB11), CAN2 (PB5/PB13), USB
OTG FS in Device mode (PA11/PA12) through DFU (device firmware upgrade).
2.2.14 Power supply schemes
●VDD = 1.8 to 3.6 V: external power supply for I/Os and the internal regulator (when
enabled), provided externally through VDD pins.
●VSSA, VDDA = 1.8 to 3.6 V: external analog power supplies for ADC, DAC, Reset blocks,
RCs and PLL. VDDA and VSSA must be connected to VDD and VSS, respectively.
●VBAT = 1.65 to 3.6 V: power supply for RTC, external clock 32 kHz oscillator and backup
registers (through power switch) when VDD is not present.
Refer to Figure 19: Power supply scheme for more details.
Note: VDD/VDDA minimum value of 1.7 V is obtained when the device operates in the 0 to 70 °C
temperature range and an inverted reset signal is applied to PDR_ON.
Description STM32F415xx, STM32F417xx
24/182 Doc ID 022063 Rev 3
2.2.15 Power supply supervisor
The power supply supervisor is enabled by holding PDR_ON high.
The device has an integrated power-on reset (POR) / power-down reset (PDR) circuitry
coupled with a Brownout reset (BOR) circuitry. At power-on, BOR is always active, and
ensures proper operation starting from 1.8 V. After the 1.8 V BOR threshold level is reached,
the option byte loading process starts, either to confirm or modify default thresholds, or to
disable BOR permanently. Three BOR thresholds are available through option bytes.
The device remains in reset mode when VDD is below a specified threshold, VPOR/PDR or
VBOR, without the need for an external reset circuit.
The device also features an embedded programmable voltage detector (PVD) that monitors
the VDD/VDDA power supply and compares it to the VPVD threshold. An interrupt can be
generated when VDD/VDDA drops below the VPVD threshold and/or when VDD/VDDA is higher
than the VPVD threshold. The interrupt service routine can then generate a warning
message and/or put the MCU into a safe state. The PVD is enabled by software.
All packages, except for the LQFP64 and LQFP100, have an internal reset controlled
through the PDR_ON signal.
2.2.16 Voltage regulator
The regulator has eight operating modes:
●Regulator ON/internal reset ON
– Main regulator mode (MR)
– Low power regulator (LPR)
– Power-down
●Regulator ON/internal reset OFF
– Main regulator mode (MR)
– Low power regulator (LPR)
– Power-down
●Regulator OFF/internal reset ON
●Regulator OFF/internal reset OFF
STM32F415xx, STM32F417xx Description
Doc ID 022063 Rev 3 25/182
Regulator ON
●Regulator ON/internal reset ON
The regulator ON/internal reset ON mode is always enabled on LQFP64 and LQFP100
package.
On LQFP144 package, this mode is activated by setting PDR_ON to VDD.
On UFBGA176 package, the internal regulator must be activated by connecting
BYPASS_REG to VSS, and PDR_ON to VDD.
On LQFP176 packages, the internal reset must be activated by connecting PDR_ON to
VDD.
There are three low-power modes:
– MR is used in the nominal regulation mode (Run)
– LPR is used in the Stop modes
– Power-down is used in Standby mode: the regulator output is in high impedance:
the kernel circuitry is powered down, inducing zero consumption (but the contents
of the registers and SRAM are lost).
●Regulator ON/internal reset OFF
The regulator ON with internal reset OFF mode is not available on LQFP64 and
LQFP100 packages.
On LQFP144, and LQFP176 packages, the internal reset is controlled by applying an
inverted reset signal to PDR_ON pin.
On UFBGA176 package, the internal regulator must be activated by connecting
BYPASS_REG to VSS.
On LQFP176 packages, the internal reset must be activated by applying an inverted
reset signal to PDR_ON pin.
VDD/VDDA minimum value of 1.7 V is obtained when the device operates in the 0 to
70 °C temperature range and an inverted reset signal is applied to PDR_ON.
The NRST pin should be controlled by an external reset controller to keep the device
under reset when VDD is below 1.8 V (see Figure 7).
Description STM32F415xx, STM32F417xx
26/182 Doc ID 022063 Rev 3
Figure 7. Regulator ON/internal reset OFF
Regulator OFF
This mode allows to power the device as soon as VDD reaches 1.8 V.
●Regulator OFF/internal reset ON
This mode is available only on UFBGA and WLCSP90 packages. It is activated by
setting BYPASS_REG and PDR_ON pins to VDD.
The regulator OFF/internal reset ON mode allows to supply externally a 1.2 V voltage
source through VCAP_1 and VCAP_2 pins, in addition to VDD.
The following conditions must be respected:
–V
DD should always be higher than VCAP_1 and VCAP_2 to avoid current injection
between power domains.
– If the time for VCAP_1 and VCAP_2 to reach 1.08 V is faster than the time for VDD to
reach 1.8 V, then PA0 should be connected to the NRST pin (see Figure 8).
Otherwise, PA0 should be asserted low externally during POR until VDD reaches
1.8 V (see Figure 9).
–If V
CAP_1 and VCAP_2 go below 1.08 V and VDD is higher than 1.7 V, then a reset
must be asserted on PA0 pin.
In regulator OFF/internal reset ON mode, PA0 cannot be used as a GPIO pin since it
allows to reset the part of the 1.2 V logic which is not reset by the NRST pin, when the
internal voltage regulator in off.
●Regulator OFF/internal reset OFF
This mode is available only on UFBGA and WLCSP packages. It is activated by setting
BYPASS_REG pin to VDD and by applying an inverted reset signal to PDR_ON, and
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STM32F415xx, STM32F417xx Description
Doc ID 022063 Rev 3 27/182
allows to supply externally a 1.2 V voltage source through VCAP_1 and VCAP_2 pins, in
addition to VDD.
The following conditions must be respected:
–V
DD should always be higher than VCAP_1 and VCAP_2 to avoid current injection
between power domains.
– PA0 should be kept low to cover both conditions: until VCAP_1 and VCAP_2 reach
1.08 V and until VDD reaches 1.8 V (see Figure 8).
– NRST should be controlled by an external reset controller to keep the device
under reset when VDD is below 1.8 V (see Figure 9).
Figure 8. Startup in regulator OFF mode: slow VDD slope
- power-down reset risen after VCAP_1/VCAP_2 stabilization
1. This figure is valid both whatever the internal reset mode (on or off).
Figure 9. Startup in regulator OFF mode: fast VDD slope
- power-down reset risen before VCAP_1/VCAP_2 stabilization
1. This figure is valid both whatever the internal reset mode (on or off).
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Description STM32F415xx, STM32F417xx
28/182 Doc ID 022063 Rev 3
2.2.17 Real-time clock (RTC), backup SRAM and backup registers
The backup domain of the STM32F415xx and STM32F417xx includes:
●The real-time clock (RTC)
●4 Kbytes of backup SRAM
●20 backup registers
The real-time clock (RTC) is an independent BCD timer/counter. Dedicated registers contain
the second, minute, hour (in 12/24 hour), week day, date, month, year, in BCD (binary-coded
decimal) format. Correction for 28, 29 (leap year), 30, and 31 day of the month are
performed automatically. The RTC provides a programmable alarm and programmable
periodic interrupts with wakeup from Stop and Standby modes. The sub-seconds value is
also available in binary format.
It is clocked by a 32.768 kHz external crystal, resonator or oscillator, the internal low-power
RC oscillator or the high-speed external clock divided by 128. The internal low-speed RC
has a typical frequency of 32 kHz. The RTC can be calibrated using an external 512 Hz
output to compensate for any natural quartz deviation.
Two alarm registers are used to generate an alarm at a specific time and calendar fields can
be independently masked for alarm comparison. To generate a periodic interrupt, a 16-bit
programmable binary auto-reload downcounter with programmable resolution is available
and allows automatic wakeup and periodic alarms from every 120 µs to every 36 hours.
A 20-bit prescaler is used for the time base clock. It is by default configured to generate a
time base of 1 second from a clock at 32.768 kHz.
The 4-Kbyte backup SRAM is an EEPROM-like memory area. It can be used to store data
which need to be retained in VBAT and standby mode. This memory area is disabled by
default to minimize power consumption (see Section 2.2.18: Low-power modes). It can be
enabled by software.
The backup registers are 32-bit registers used to store 80 bytes of user application data
when VDD power is not present. Backup registers are not reset by a system, a power reset,
or when the device wakes up from the Standby mode (see Section 2.2.18: Low-power
modes).
Additional 32-bit registers contain the programmable alarm subseconds, seconds, minutes,
hours, day, and date.
Like backup SRAM, the RTC and backup registers are supplied through a switch that is
powered either from the VDD supply when present or from the VBAT pin.
2.2.18 Low-power modes
The STM32F415xx and STM32F417xx support three low-power modes to achieve the best
compromise between low power consumption, short startup time and available wakeup
sources:
●Sleep mode
In Sleep mode, only the CPU is stopped. All peripherals continue to operate and can
wake up the CPU when an interrupt/event occurs.
●Stop mode
The Stop mode achieves the lowest power consumption while retaining the contents of
SRAM and registers. All clocks in the 1.2 V domain are stopped, the PLL, the HSI RC
STM32F415xx, STM32F417xx Description
Doc ID 022063 Rev 3 29/182
and the HSE crystal oscillators are disabled. The voltage regulator can also be put
either in normal or in low-power mode.
The device can be woken up from the Stop mode by any of the EXTI line (the EXTI line
source can be one of the 16 external lines, the PVD output, the RTC alarm / wakeup /
tamper / time stamp events, the USB OTG FS/HS wakeup or the Ethernet wakeup).
●Standby mode
The Standby mode is used to achieve the lowest power consumption. The internal
voltage regulator is switched off so that the entire 1.2 V domain is powered off. The
PLL, the HSI RC and the HSE crystal oscillators are also switched off. After entering
Standby mode, the SRAM and register contents are lost except for registers in the
backup domain and the backup SRAM when selected.
The device exits the Standby mode when an external reset (NRST pin), an IWDG reset,
a rising edge on the WKUP pin, or an RTC alarm / wakeup / tamper /time stamp event
occurs.
The standby mode is not supported when the embedded voltage regulator is bypassed
and the 1.2 V domain is controlled by an external power.
Note: When in Standby mode, only an RTC alarm/event or an external reset can wake up the
device provided VDD is supplied by an external battery.
2.2.19 VBAT operation
The VBAT pin allows to power the device VBAT domain from an external battery, an external
supercapacitor, or from VDD when no external battery and an external supercapacitor are
present.
VBAT operation is activated when VDD is not present.
The VBAT pin supplies the RTC, the backup registers and the backup SRAM.
Note: When the microcontroller is supplied from VBAT
, external interrupts and RTC alarm/events
do not exit it from VBAT operation.
2.2.20 Timers and watchdogs
The STM32F415xx and STM32F417xx devices include two advanced-control timers, eight
general-purpose timers, two basic timers and two watchdog timers.
All timer counters can be frozen in debug mode.
Ta bl e 3 compares the features of the advanced-control, general-purpose and basic timers.
Description STM32F415xx, STM32F417xx
30/182 Doc ID 022063 Rev 3
Advanced-control timers (TIM1, TIM8)
The advanced-control timers (TIM1, TIM8) can be seen as three-phase PWM generators
multiplexed on 6 channels. They have complementary PWM outputs with programmable
inserted dead times. They can also be considered as complete general-purpose timers.
Their 4 independent channels can be used for:
●Input capture
●Output compare
●PWM generation (edge- or center-aligned modes)
●One-pulse mode output
If configured as standard 16-bit timers, they have the same features as the general-purpose
TIMx timers. If configured as 16-bit PWM generators, they have full modulation capability (0-
100%).
The advanced-control timer can work together with the TIMx timers via the Timer Link
feature for synchronization or event chaining.
TIM1 and TIM8 support independent DMA request generation.
Table 3. Timer feature comparison
Timer type Timer Counter
resolution
Counter
type
Prescaler
factor
DMA
request
generation
Capture/
compare
channels
Complementary
output
Max
interface
clock
(MHz)
Max
timer
clock
(MHz)
Advanced-
control
TIM1,
TIM8 16-bit
Up,
Down,
Up/down
Any integer
between 1
and 65536
Ye s 4 Ye s 8 4 1 6 8
General
purpose
TIM2,
TIM5 32-bit
Up,
Down,
Up/down
Any integer
between 1
and 65536
Yes 4 No 42 84
TIM3,
TIM4 16-bit
Up,
Down,
Up/down
Any integer
between 1
and 65536
Yes 4 No 42 84
TIM9 16-bit Up
Any integer
between 1
and 65536
No 2 No 84 168
TIM10,
TIM11 16-bit Up
Any integer
between 1
and 65536
No 1 No 84 168
TIM12 16-bit Up
Any integer
between 1
and 65536
No 2 No 42 84
TIM13,
TIM14 16-bit Up
Any integer
between 1
and 65536
No 1 No 42 84
Basic TIM6,
TIM7 16-bit Up
Any integer
between 1
and 65536
Yes 0 No 42 84
STM32F415xx, STM32F417xx Description
Doc ID 022063 Rev 3 31/182
General-purpose timers (TIMx)
There are ten synchronizable general-purpose timers embedded in the STM32F41x devices
(see Ta b l e 3 for differences).
●TIM2, TIM3, TIM4, TIM5
The STM32F41x include 4 full-featured general-purpose timers: TIM2, TIM5, TIM3, and
TIM4.The TIM2 and TIM5 timers are based on a 32-bit auto-reload up/downcounter
and a 16-bit prescaler. The TIM3 and TIM4 timers are based on a 16-bit auto-reload
up/downcounter and a 16-bit prescaler. They all feature 4 independent channels for
input capture/output compare, PWM or one-pulse mode output. This gives up to 16
input capture/output compare/PWMs on the largest packages.
The TIM2, TIM3, TIM4, TIM5 general-purpose timers can work together, or with the
other general-purpose timers and the advanced-control timers TIM1 and TIM8 via the
Timer Link feature for synchronization or event chaining.
Any of these general-purpose timers can be used to generate PWM outputs.
TIM2, TIM3, TIM4, TIM5 all have independent DMA request generation. They are
capable of handling quadrature (incremental) encoder signals and the digital outputs
from 1 to 4 hall-effect sensors.
●TIM9, TIM10, TIM11, TIM12, TIM13, and TIM14
These timers are based on a 16-bit auto-reload upcounter and a 16-bit prescaler.
TIM10, TIM11, TIM13, and TIM14 feature one independent channel, whereas TIM9
and TIM12 have two independent channels for input capture/output compare, PWM or
one-pulse mode output. They can be synchronized with the TIM2, TIM3, TIM4, TIM5
full-featured general-purpose timers. They can also be used as simple time bases.
Basic timers TIM6 and TIM7
These timers are mainly used for DAC trigger and waveform generation. They can also be
used as a generic 16-bit time base.
TIM6 and TIM7 support independent DMA request generation.
Independent watchdog
The independent watchdog is based on a 12-bit downcounter and 8-bit prescaler. It is
clocked from an independent 32 kHz internal RC and as it operates independently from the
main clock, it can operate in Stop and Standby modes. It can be used either as a watchdog
to reset the device when a problem occurs, or as a free-running timer for application timeout
management. It is hardware- or software-configurable through the option bytes.
Window watchdog
The window watchdog is based on a 7-bit downcounter that can be set as free-running. It
can be used as a watchdog to reset the device when a problem occurs. It is clocked from the
main clock. It has an early warning interrupt capability and the counter can be frozen in
debug mode.
Description STM32F415xx, STM32F417xx
32/182 Doc ID 022063 Rev 3
SysTick timer
This timer is dedicated to real-time operating systems, but could also be used as a standard
downcounter. It features:
●A 24-bit downcounter
●Autoreload capability
●Maskable system interrupt generation when the counter reaches 0
●Programmable clock source.
2.2.21 Inter-integrated circuit interface (I²C)
Up to three I²C bus interfaces can operate in multimaster and slave modes. They can
support the Standard- and Fast-modes. They support the 7/10-bit addressing mode and the
7-bit dual addressing mode (as slave). A hardware CRC generation/verification is
embedded.
They can be served by DMA and they support SMBus 2.0/PMBus.
2.2.22 Universal synchronous/asynchronous receiver transmitters (USART)
The STM32F415xx and STM32F417xx embed four universal synchronous/asynchronous
receiver transmitters (USART1, USART2, USART3 and USART6) and two universal
asynchronous receiver transmitters (UART4 and UART5).
These six interfaces provide asynchronous communication, IrDA SIR ENDEC support,
multiprocessor communication mode, single-wire half-duplex communication mode and
have LIN Master/Slave capability. The USART1 and USART6 interfaces are able to
communicate at speeds of up to 10.5 Mbit/s. The other available interfaces communicate at
up to 5.25 bit/s.
USART1, USART2, USART3 and USART6 also provide hardware management of the CTS
and RTS signals, Smart Card mode (ISO 7816 compliant) and SPI-like communication
capability. All interfaces can be served by the DMA controller.
STM32F415xx, STM32F417xx Description
Doc ID 022063 Rev 3 33/182
2.2.23 Serial peripheral interface (SPI)
The STM32F41x feature up to three SPIs in slave and master modes in full-duplex and
simplex communication modes. SPI1 can communicate at up to 37.5 Mbits/s, SPI2 and
SPI3 can communicate at up to 21 Mbit/s. The 3-bit prescaler gives 8 master mode
frequencies and the frame is configurable to 8 bits or 16 bits. The hardware CRC
generation/verification supports basic SD Card/MMC modes. All SPIs can be served by the
DMA controller.
The SPI interface can be configured to operate in TI mode for communications in master
mode and slave mode.
2.2.24 Inter-integrated sound (I2S)
Two standard I2S interfaces (multiplexed with SPI2 and SPI3) are available. They can be
operated in master or slave mode, in full duplex and simplex communication modes, and
can be configured to operate with a 16-/32-bit resolution as an input or output channel.
Audio sampling frequencies from 8 kHz up to 192 kHz are supported. When either or both of
the I2S interfaces is/are configured in master mode, the master clock can be output to the
external DAC/CODEC at 256 times the sampling frequency.
All I2Sx can be served by the DMA controller.
Table 4. USART feature comparison
USART
name
Standard
features
Modem
(RTS/CTS) LIN SPI
master irDA Smartcard
(ISO 7816)
Max. baud rate
in Mbit/s
(oversampling
by 16)
Max. baud rate
in Mbit/s
(oversampling
by 8)
APB
mapping
USART1 X X X X X X 5.25 10.5
APB2
(max.
84 MHz)
USART2 X X X X X X 2.62 5.25
APB1
(max.
42 MHz)
USART3 X X X X X X 2.62 5.25
APB1
(max.
42 MHz)
UART4 X - X - X - 2.62 5.25
APB1
(max.
42 MHz)
UART5 X - X - X - 2.62 5.25
APB1
(max.
42 MHz)
USART6 X X X X X X 5.25 10.5
APB2
(max.
84 MHz)
Description STM32F415xx, STM32F417xx
34/182 Doc ID 022063 Rev 3
2.2.25 Audio PLL (PLLI2S)
The devices feature an additional dedicated PLL for audio I2S application. It allows to
achieve error-free I2S sampling clock accuracy without compromising on the CPU
performance, while using USB peripherals.
The PLLI2S configuration can be modified to manage an I2S sample rate change without
disabling the main PLL (PLL) used for CPU, USB and Ethernet interfaces.
The audio PLL can be programmed with very low error to obtain sampling rates ranging
from 8 KHz to 192 KHz.
In addition to the audio PLL, a master clock input pin can be used to synchronize the I2S
flow with an external PLL (or Codec output).
2.2.26 Secure digital input/output interface (SDIO)
An SD/SDIO/MMC host interface is available, that supports MultiMediaCard System
Specification Version 4.2 in three different databus modes: 1-bit (default), 4-bit and 8-bit.
The interface allows data transfer at up to 48 MHz, and is compliant with the SD Memory
Card Specification Version 2.0.
The SDIO Card Specification Version 2.0 is also supported with two different databus
modes: 1-bit (default) and 4-bit.
The current version supports only one SD/SDIO/MMC4.2 card at any one time and a stack
of MMC4.1 or previous.
In addition to SD/SDIO/MMC, this interface is fully compliant with the CE-ATA digital protocol
Rev1.1.
2.2.27 Ethernet MAC interface with dedicated DMA and IEEE 1588 support
Peripheral available only on the STM32F417xx devices.
The STM32F417xx devices provide an IEEE-802.3-2002-compliant media access controller
(MAC) for ethernet LAN communications through an industry-standard medium-
independent interface (MII) or a reduced medium-independent interface (RMII). The
STM32F417xx requires an external physical interface device (PHY) to connect to the
physical LAN bus (twisted-pair, fiber, etc.). the PHY is connected to the STM32F417xx MII
port using 17 signals for MII or 9 signals for RMII, and can be clocked using the 25 MHz
(MII) from the STM32F417xx.
STM32F415xx, STM32F417xx Description
Doc ID 022063 Rev 3 35/182
The STM32F417xx includes the following features:
●Supports 10 and 100 Mbit/s rates
●Dedicated DMA controller allowing high-speed transfers between the dedicated SRAM
and the descriptors (see the STM32F46x reference manual for details)
●Tagged MAC frame support (VLAN support)
●Half-duplex (CSMA/CD) and full-duplex operation
●MAC control sublayer (control frames) support
●32-bit CRC generation and removal
●Several address filtering modes for physical and multicast address (multicast and group
addresses)
●32-bit status code for each transmitted or received frame
●Internal FIFOs to buffer transmit and receive frames. The transmit FIFO and the receive
FIFO are both 2 Kbytes.
●Supports hardware PTP (precision time protocol) in accordance with IEEE 1588 2008
(PTP V2) with the time stamp comparator connected to the TIM2 input
●Triggers interrupt when system time becomes greater than target time
2.2.28 Controller area network (bxCAN)
The two CANs are compliant with the 2.0A and B (active) specifications with a bitrate up to 1
Mbit/s. They can receive and transmit standard frames with 11-bit identifiers as well as
extended frames with 29-bit identifiers. Each CAN has three transmit mailboxes, two receive
FIFOS with 3 stages and 28 shared scalable filter banks (all of them can be used even if one
CAN is used). 256 bytes of SRAM are allocated for each CAN.
2.2.29 Universal serial bus on-the-go full-speed (OTG_FS)
The STM32F415xx and STM32F417xx embed an USB OTG full-speed device/host/OTG
peripheral with integrated transceivers. The USB OTG FS peripheral is compliant with the
USB 2.0 specification and with the OTG 1.0 specification. It has software-configurable
endpoint setting and supports suspend/resume. The USB OTG full-speed controller
requires a dedicated 48 MHz clock that is generated by a PLL connected to the HSE
oscillator. The major features are:
●Combined Rx and Tx FIFO size of 320 × 35 bits with dynamic FIFO sizing
●Supports the session request protocol (SRP) and host negotiation protocol (HNP)
●4 bidirectional endpoints
●8 host channels with periodic OUT support
●HNP/SNP/IP inside (no need for any external resistor)
●For OTG/Host modes, a power switch is needed in case bus-powered devices are
connected
2.2.30 Universal serial bus on-the-go high-speed (OTG_HS)
The STM32F415xx and STM32F417xx devices embed a USB OTG high-speed (up to
480 Mb/s) device/host/OTG peripheral. The USB OTG HS supports both full-speed and
high-speed operations. It integrates the transceivers for full-speed operation (12 MB/s) and
features a UTMI low-pin interface (ULPI) for high-speed operation (480 MB/s). When using
the USB OTG HS in HS mode, an external PHY device connected to the ULPI is required.
Description STM32F415xx, STM32F417xx
36/182 Doc ID 022063 Rev 3
The USB OTG HS peripheral is compliant with the USB 2.0 specification and with the OTG
1.0 specification. It has software-configurable endpoint setting and supports
suspend/resume. The USB OTG full-speed controller requires a dedicated 48 MHz clock
that is generated by a PLL connected to the HSE oscillator.
The major features are:
●Combined Rx and Tx FIFO size of 1 Kbit × 35 with dynamic FIFO sizing
●Supports the session request protocol (SRP) and host negotiation protocol (HNP)
●6 bidirectional endpoints
●12 host channels with periodic OUT support
●Internal FS OTG PHY support
●External HS or HS OTG operation supporting ULPI in SDR mode. The OTG PHY is
connected to the microcontroller ULPI port through 12 signals. It can be clocked using
the 60 MHz output.
●Internal USB DMA
●HNP/SNP/IP inside (no need for any external resistor)
●for OTG/Host modes, a power switch is needed in case bus-powered devices are
connected
2.2.31 Digital camera interface (DCMI)
The camera interface is not available in STM32F415xx devices.
STM32F417xx products embed a camera interface that can connect with camera modules
and CMOS sensors through an 8-bit to 14-bit parallel interface, to receive video data. The
camera interface can sustain a data transfer rate up to 54 Mbyte/s at 54 MHz. It features:
●Programmable polarity for the input pixel clock and synchronization signals
●Parallel data communication can be 8-, 10-, 12- or 14-bit
●Supports 8-bit progressive video monochrome or raw bayer format, YCbCr 4:2:2
progressive video, RGB 565 progressive video or compressed data (like JPEG)
●Supports continuous mode or snapshot (a single frame) mode
●Capability to automatically crop the image
STM32F415xx, STM32F417xx Description
Doc ID 022063 Rev 3 37/182
2.2.32 Cryptographic acceleration
The STM32F415xx and STM32F417xx devices embed a cryptographic accelerator. This
cryptographic accelerator provides a set of hardware acceleration for the advanced
cryptographic algorithms usually needed to provide confidentiality, authentication, data
integrity and non repudiation when exchanging messages with a peer.
These algorithms consists of:
Encryption/Decryption
– DES/TDES (data encryption standard/triple data encryption standard): ECB
(electronic codebook) and CBC (cipher block chaining) chaining algorithms, 64-,
128- or 192-bit key
– AES (advanced encryption standard): ECB, CBC and CTR (counter mode)
chaining algorithms, 128, 192 or 256-bit key
Universal hash
– SHA-1 (secure hash algorithm)
–MD5
–HMAC
The cryptographic accelerator supports DMA request generation.
2.2.33 Random number generator (RNG)
All STM32F415xx and STM32F417xx products embed an RNG that delivers 32-bit random
numbers generated by an integrated analog circuit.
2.2.34 General-purpose input/outputs (GPIOs)
Each of the GPIO pins can be configured by software as output (push-pull or open-drain,
with or without pull-up or pull-down), as input (floating, with or without pull-up or pull-down)
or as peripheral alternate function. Most of the GPIO pins are shared with digital or analog
alternate functions. All GPIOs are high-current-capable and have speed selection to better
manage internal noise, power consumption and electromagnetic emission.
The I/O configuration can be locked if needed by following a specific sequence in order to
avoid spurious writing to the I/Os registers.
Fast I/O handling allowing maximum I/O toggling up to 84 MHz.
2.2.35 Analog-to-digital converters (ADCs)
Three 12-bit analog-to-digital converters are embedded and each ADC shares up to 16
external channels, performing conversions in the single-shot or scan mode. In scan mode,
automatic conversion is performed on a selected group of analog inputs.
Additional logic functions embedded in the ADC interface allow:
●Simultaneous sample and hold
●Interleaved sample and hold
The ADC can be served by the DMA controller. An analog watchdog feature allows very
precise monitoring of the converted voltage of one, some or all selected channels. An
interrupt is generated when the converted voltage is outside the programmed thresholds.
Description STM32F415xx, STM32F417xx
38/182 Doc ID 022063 Rev 3
To synchronize A/D conversion and timers, the ADCs could be triggered by any of TIM1,
TIM2, TIM3, TIM4, TIM5, or TIM8 timer.
2.2.36 Temperature sensor
The temperature sensor has to generate a voltage that varies linearly with temperature. The
conversion range is between 1.8 V and 3.6 V. The temperature sensor is internally
connected to the ADC1_IN16 input channel which is used to convert the sensor output
voltage into a digital value.
As the offset of the temperature sensor varies from chip to chip due to process variation, the
internal temperature sensor is mainly suitable for applications that detect temperature
changes instead of absolute temperatures. If an accurate temperature reading is needed,
then an external temperature sensor part should be used.
2.2.37 Digital-to-analog converter (DAC)
The two 12-bit buffered DAC channels can be used to convert two digital signals into two
analog voltage signal outputs.
This dual digital Interface supports the following features:
●two DAC converters: one for each output channel
●8-bit or 12-bit monotonic output
●left or right data alignment in 12-bit mode
●synchronized update capability
●noise-wave generation
●triangular-wave generation
●dual DAC channel independent or simultaneous conversions
●DMA capability for each channel
●external triggers for conversion
●input voltage reference VREF+
Eight DAC trigger inputs are used in the device. The DAC channels are triggered through
the timer update outputs that are also connected to different DMA streams.
2.2.38 Serial wire JTAG debug port (SWJ-DP)
The ARM SWJ-DP interface is embedded, and is a combined JTAG and serial wire debug
port that enables either a serial wire debug or a JTAG probe to be connected to the target.
Debug is performed using 2 pins only instead of 5 required by the JTAG (JTAG pins could be
re-use as GPIO with alternate function): the JTAG TMS and TCK pins are shared with
SWDIO and SWCLK, respectively, and a specific sequence on the TMS pin is used to switch
between JTAG-DP and SW-DP.
2.2.39 Embedded Trace Macrocell™
The ARM Embedded Trace Macrocell provides a greater visibility of the instruction and data
flow inside the CPU core by streaming compressed data at a very high rate from the
STM32F41x through a small number of ETM pins to an external hardware trace port
analyzer (TPA) device. The TPA is connected to a host computer using USB, Ethernet, or
any other high-speed channel. Real-time instruction and data flow activity can be recorded
STM32F415xx, STM32F417xx Description
Doc ID 022063 Rev 3 39/182
and then formatted for display on the host computer that runs the debugger software. TPA
hardware is commercially available from common development tool vendors.
The Embedded Trace Macrocell operates with third party debugger software tools.
Pinouts and pin description STM32F415xx, STM32F417xx
40/182 Doc ID 022063 Rev 3
3 Pinouts and pin description
Figure 10. STM32F41x LQFP64 pinout
64 63 62 61 60 59 58 57 56 55 54 53 52 51 50 49
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46
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43
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41
40
39
38
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35
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17 18 19 20 21 22 23 24 29 30 31 3225 26 27 28
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STM32F415xx, STM32F417xx Pinouts and pin description
Doc ID 022063 Rev 3 41/182
Figure 11. STM32F41x LQFP100 pinout
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6$$
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633
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0"
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0$
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0$
0#
0#
0#
0!
0!
AIC
,1&0
0#
0(
Pinouts and pin description STM32F415xx, STM32F417xx
42/182 Doc ID 022063 Rev 3
Figure 12. STM32F41x LQFP144 pinout
6$$
0$2?/.
0%
0%
0"
0"
"//4
0"
0"
0"
0"
0"
0'
6$$
633
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0'
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0'
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0$
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0% 6
33
0%
0% 0!
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0"
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6$$
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AIB
6
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633
STM32F415xx, STM32F417xx Pinouts and pin description
Doc ID 022063 Rev 3 43/182
Figure 13. STM32F41x LQFP176 pinout
-36
0$2?/.
6$$
0%
0%
0"
0"
"//4
0"
0"
0"
0"
0"
0'
6
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6
33
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6
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633
6$$
6$$!
633!
6$$!
Pinouts and pin description STM32F415xx, STM32F417xx
44/182 Doc ID 022063 Rev 3
Figure 14. STM32F41x UFBGA176 ballout
1. This figure shows the package top view.
AIB
! 0% 0% 0% 0% 0" 0" 0' 0' 0" 0" 0$ 0# 0! 0! 0!
" 0% 0% 0% 0" 0" 0" 0'0'0'0' 0$ 0$ 0#0#0!
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6$$ 6$$ 6$$ 6$$ 0' 0$ 0$ 0) 0) 0!
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& 0# 633 6$$ 0( 633 633 633 633 633 633 6#!0? 0# 0!
'0( 633 6$$ 0( 633 633 633 633 633 633 6$$ 0# 0#
(0( 0& 0& 0( 633 633 633 633 633 633 6$$ 0' 0#
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+0& 0& 0&
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0 62%& 0! 0! 0! 0# 0& 0& 0% 0% 0% 0% 0" 0" 0$ 0$
2 6$$! 0! 0! 0" 0" 0& 0& 0% 0% 0% 0% 0" 0" 0" 0"
633
STM32F415xx, STM32F417xx Pinouts and pin description
Doc ID 022063 Rev 3 45/182
Figure 15. STM32F41x WLCSP90 ballout
1. This figure shows the package bump view.
! 6"!4 0# 0$2?/. 0" 0$ 0$ 0#
"0# 6$$ 0" 0" 0$ 0$ 0!
#0! 633 0# 0)
0" 0$ 0$
$ 0# 0" 0!
%0# 633
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0)
0!
0! 0!
0# 0# 0#
0(
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0# 0$
0$
0% 0%
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2%'
0$ 0$
0% 0"
6$$
0# 6#!0?
0!
0" 0$ 0# 0!
633 6$$ 633 6$$ 0#
6$$ 0% 0% 6#!0? 0$
0% 0% 0$ 0$
0! 0! 0" 0" 0"
0"
"//4
6$$! 0" 0%0!
Table 5. Legend/abbreviations used in the pinout table
Name Abbreviation Definition
Pin name Unless otherwise specified in brackets below the pin name, the pin function during and after
reset is the same as the actual pin name
Pin type
S Supply pin
I Input only pin
I/O Input / output pin
I/O structure
FT 5 V tolerant I/O
FTf 5 V tolerant I/O, FM+ capable
TTa 3.3 V tolerant I/O directly connected to ADC
TC Standard 3.3V I/O
B Dedicated BOOT0 pin
RST Bidirectional reset pin with embedded weak pull-up resistor
Notes Unless otherwise specified by a note, all I/Os are set as floating inputs during and after reset
Pinouts and pin description STM32F415xx, STM32F417xx
46/182 Doc ID 022063 Rev 3
Alternate
functions Functions selected through GPIOx_AFR registers
Additional
functions Functions directly selected/enabled through peripheral registers
Table 5. Legend/abbreviations used in the pinout table (continued)
Name Abbreviation Definition
STM32F415xx, STM32F417xx Pinouts and pin description
Doc ID 022063 Rev 3 47/182
Table 6. STM32F41x pin and ball definitions
Pin number
Pin name
(function after
reset)(1)
Pin type
I / O structure
Notes
Alternate functions Additional functions
LQFP64
WLCSP90
LQFP100
LQFP144
UFBGA176
LQFP176
- - 1 1 A2 1 PE2 I/O FT
TRACECLK/ FSMC_A23 /
ETH_MII_TXD3 /
EVENTOUT
- - 2 2 A1 2 PE3 I/O FT TRACED0/FSMC_A19 /
EVENTOUT
- - 3 3 B1 3 PE4 I/O FT TRACED1/FSMC_A20 /
DCMI_D4/ EVENTOUT
- - 4 4 B2 4 PE5 I/O FT
TRACED2 / FSMC_A21 /
TIM9_CH1 / DCMI_D6 /
EVENTOUT
- - 5 5 B3 5 PE6 I/O FT
TRACED3 / FSMC_A22 /
TIM9_CH2 / DCMI_D7 /
EVENTOUT
1A106 6 C1 6 V
BAT S
----D27 PI8 I/OFT
(2)(3) EVENTOUT RTC_AF2
2A97 7 D1 8 PC13 I/OFT
(2)(3) EVENTOUT RTC_AF1
3B108 8 E1 9 PC14-OSC32_IN
(PC14) I/O FT (2)(3) EVENTOUT OSC32_IN(4)
4B99 9 F110
PC15-
OSC32_OUT
(PC15)
I/O FT (2)(3) EVENTOUT OSC32_OUT(4)
- - - - D3 11 PI9 I/O FT CAN1_RX / EVENTOUT
- - - - E3 12 PI10 I/O FT ETH_MII_RX_ER /
EVENTOUT
- - - - E4 13 PI11 I/O FT OTG_HS_ULPI_DIR /
EVENTOUT
----F214 V
SS S
----F315 V
DD S
---10E216 PF0 I/OFT FSMC_A0 / I2C2_SDA /
EVENTOUT
---11H317 PF1 I/OFT FSMC_A1 / I2C2_SCL /
EVENTOUT
---12H218 PF2 I/OFT FSMC_A2 / I2C2_SMBA /
EVENTOUT
---13J219 PF3 I/OFT
(4) FSMC_A3/EVENTOUT ADC3_IN9
---14J320 PF4 I/OFT
(4) FSMC_A4/EVENTOUT ADC3_IN14
---15K321 PF5 I/OFT
(4) FSMC_A5/EVENTOUT ADC3_IN15
Pinouts and pin description STM32F415xx, STM32F417xx
48/182 Doc ID 022063 Rev 3
- C91016G222 V
SS S
- B81117G323 V
DD S
---18K224 PF6 I/OFT
(4)
TIM10_CH1 /
FSMC_NIORD/
EVENTOUT
ADC3_IN4
---19K125 PF7 I/OFT
(4) TIM11_CH1/FSMC_NREG/
EVENTOUT ADC3_IN5
---20L326 PF8 I/OFT
(4)
TIM13_CH1 /
FSMC_NIOWR/
EVENTOUT
ADC3_IN6
---21L227 PF9 I/OFT
(4) TIM14_CH1 / FSMC_CD/
EVENTOUT ADC3_IN7
- - - 22 L1 28 PF10 I/O FT (4) FSMC_INTR/ EVENTOUT ADC3_IN8
5 F10 12 23 G1 29 PH0-OSC_IN
(PH0) I/O FT EVENTOUT OSC_IN(4)
6F91324H130PH1-OSC_OUT
(PH1) I/O FT EVENTOUT OSC_OUT(4)
7 G10 14 25 J1 31 NRST I/O RST
8 E10 15 26 M2 32 PC0 I/O FT (4) OTG_HS_ULPI_STP/
EVENTOUT ADC123_IN10
9 - 16 27 M3 33 PC1 I/O FT (4) ETH_MDC/ EVENTOUT ADC123_IN11
10 D10 17 28 M4 34 PC2 I/O FT (4)
SPI2_MISO /
OTG_HS_ULPI_DIR /
TH_MII_TXD2
/I2S2ext_SD/ EVENTOUT
ADC123_IN12
11 E9 18 29 M5 35 PC3 I/O FT (4)
SPI2_MOSI / I2S2_SD /
OTG_HS_ULPI_NXT /
ETH_MII_TX_CLK/
EVENTOUT
ADC123_IN13
- - 19 30 G3 36 VDD S
12 H10 20 31 M1 37 VSSA S
----N1- V
REF– S
- - 21 32 P1 38 VREF+ S
13 G9 22 33 R1 39 VDDA S
Table 6. STM32F41x pin and ball definitions (continued)
Pin number
Pin name
(function after
reset)(1)
Pin type
I / O structure
Notes
Alternate functions Additional functions
LQFP64
WLCSP90
LQFP100
LQFP144
UFBGA176
LQFP176
STM32F415xx, STM32F417xx Pinouts and pin description
Doc ID 022063 Rev 3 49/182
14 C10 23 34 N3 40 PA 0 - W K U P
(PA0) I/O FT (5)
USART2_CTS/ UART4_TX/
ETH_MII_CRS /
TIM2_CH1_ETR/
TIM5_CH1 / TIM8_ETR/
EVENTOUT
ADC123_IN0/WKUP(4)
15 F8 24 35 N2 41 PA1 I/O FT (4)
USART2_RTS /
UART4_RX/
ETH_RMII_REF_CLK /
ETH_MII_RX_CLK /
TIM5_CH2 / TIMM2_CH2/
EVENTOUT
ADC123_IN1
16 J10 25 36 P2 42 PA2 I/O FT (4)
USART2_TX/TIM5_CH3 /
TIM9_CH1 / TIM2_CH3 /
ETH_MDIO/ EVENTOUT
ADC123_IN2
- - - - F4 43 PH2 I/O FT ETH_MII_CRS/EVENTOUT
- - - - G4 44 PH3 I/O FT ETH_MII_COL/EVENTOUT
----H445 PH4 I/OFT
I2C2_SCL /
OTG_HS_ULPI_NXT/
EVENTOUT
- - - - J4 46 PH5 I/O FT I2C2_SDA/ EVENTOUT
17 H9 26 37 R2 47 PA3 I/O FT (4)
USART2_RX/TIM5_CH4 /
TIM9_CH2 / TIM2_CH4 /
OTG_HS_ULPI_D0 /
ETH_MII_COL/
EVENTOUT
ADC123_IN3
18 E5 27 38 - 48 VSS S
D9 L4 - BYPASS_REG I FT
19 E4 28 39 K4 49 VDD S
20 J9 29 40 N4 50 PA4 I/O TC (4)
SPI1_NSS / SPI3_NSS /
USART2_CK /
DCMI_HSYNC /
OTG_HS_SOF/ I2S3_WS/
EVENTOUT
ADC12_IN4
/DAC1_OUT
21 G8 30 41 P4 51 PA5 I/O TC (4)
SPI1_SCK/
OTG_HS_ULPI_CK /
TIM2_CH1_ETR/
TIM8_CHIN/ EVENTOUT
ADC12_IN5/DAC2_OU
T
22 H8 31 42 P3 52 PA6 I/O FT (4)
SPI1_MISO /
TIM8_BKIN/TIM13_CH1 /
DCMI_PIXCLK / TIM3_CH1
/ TIM1_BKIN/ EVENTOUT
ADC12_IN6
Table 6. STM32F41x pin and ball definitions (continued)
Pin number
Pin name
(function after
reset)(1)
Pin type
I / O structure
Notes
Alternate functions Additional functions
LQFP64
WLCSP90
LQFP100
LQFP144
UFBGA176
LQFP176
Pinouts and pin description STM32F415xx, STM32F417xx
50/182 Doc ID 022063 Rev 3
23 J8 32 43 R3 53 PA7 I/O FT (4)
SPI1_MOSI/ TIM8_CH1N /
TIM14_CH1/TIM3_CH2/
ETH_MII_RX_DV /
TIM1_CH1N /
RMII_CRS_DV/
EVENTOUT
ADC12_IN7
24 - 33 44 N5 54 PC4 I/O FT (4)
ETH_RMII_RX_D0 /
ETH_MII_RX_D0/
EVENTOUT
ADC12_IN14
25 - 34 45 P5 55 PC5 I/O FT (4)
ETH_RMII_RX_D1 /
ETH_MII_RX_D1/
EVENTOUT
ADC12_IN15
26 G7 35 46 R5 56 PB0 I/O FT (4)
TIM3_CH3 / TIM8_CH2N/
OTG_HS_ULPI_D1/
ETH_MII_RXD2 /
TIM1_CH2N/ EVENTOUT
ADC12_IN8
27 H7 36 47 R4 57 PB1 I/O FT (4)
TIM3_CH4 / TIM8_CH3N/
OTG_HS_ULPI_D2/
ETH_MII_RXD3 /
TIM1_CH3N/ EVENTOUT
ADC12_IN9
28 J7 37 48 M6 58 PB2-BOOT1
(PB2) I/O FT EVENTOUT
- - - 49 R6 59 PF11 I/O FT DCMI_12/ EVENTOUT
- - - 50 P6 60 PF12 I/O FT FSMC_A6/ EVENTOUT
---51M861 V
SS S
---52N862 V
DD S
- - - 53 N6 63 PF13 I/O FT FSMC_A7/ EVENTOUT
- - - 54 R7 64 PF14 I/O FT FSMC_A8/ EVENTOUT
- - - 55 P7 65 PF15 I/O FT FSMC_A9/ EVENTOUT
- - - 56 N7 66 PG0 I/O FT FSMC_A10/ EVENTOUT
- - - 57 M7 67 PG1 I/O FT FSMC_A11/ EVENTOUT
- G6 38 58 R8 68 PE7 I/O FT FSMC_D4/TIM1_ETR/
EVENTOUT
- H6 39 59 P8 69 PE8 I/O FT FSMC_D5/ TIM1_CH1N/
EVENTOUT
- J6 40 60 P9 70 PE9 I/O FT FSMC_D6/TIM1_CH1/
EVENTOUT
---61M971 V
SS S
---62N972 V
DD S
Table 6. STM32F41x pin and ball definitions (continued)
Pin number
Pin name
(function after
reset)(1)
Pin type
I / O structure
Notes
Alternate functions Additional functions
LQFP64
WLCSP90
LQFP100
LQFP144
UFBGA176
LQFP176
STM32F415xx, STM32F417xx Pinouts and pin description
Doc ID 022063 Rev 3 51/182
- F6 41 63 R9 73 PE10 I/O FT FSMC_D7/TIM1_CH2N/
EVENTOUT
- J5 42 64 P10 74 PE11 I/O FT FSMC_D8/TIM1_CH2/
EVENTOUT
- H5 43 65 R10 75 PE12 I/O FT FSMC_D9/TIM1_CH3N/
EVENTOUT
- G5 44 66 N11 76 PE13 I/O FT FSMC_D10/TIM1_CH3/
EVENTOUT
- F5 45 67 P11 77 PE14 I/O FT FSMC_D11/TIM1_CH4/
EVENTOUT
- G4 46 68 R11 78 PE15 I/O FT FSMC_D12/TIM1_BKIN/
EVENTOUT
29 H4 47 69 R12 79 PB10 I/O FT
SPI2_SCK / I2S2_CK /
I2C2_SCL/ USART3_TX /
OTG_HS_ULPI_D3 /
ETH_MII_RX_ER /
TIM2_CH3/ EVENTOUT
30 J4 48 70 R13 80 PB11 I/O FT
I2C2_SDA/USART3_RX/
OTG_HS_ULPI_D4 /
ETH_RMII_TX_EN/
ETH_MII_TX_EN /
TIM2_CH4/ EVENTOUT
31 F4 49 71 M10 81 VCAP_1 S
32 - 50 72 N10 82 VDD S
----M1183 PH6 I/OFT
I2C2_SMBA / TIM12_CH1 /
ETH_MII_RXD2/
EVENTOUT
----N1284 PH7 I/OFT
I2C3_SCL /
ETH_MII_RXD3/
EVENTOUT
----M1285 PH8 I/OFT
I2C3_SDA /
DCMI_HSYNC/
EVENTOUT
----M1386 PH9 I/OFT I2C3_SMBA / TIM12_CH2/
DCMI_D0/ EVENTOUT
- - - - L13 87 PH10 I/O FT TIM5_CH1 / DCMI_D1/
EVENTOUT
- - - - L12 88 PH11 I/O FT TIM5_CH2 / DCMI_D2/
EVENTOUT
Table 6. STM32F41x pin and ball definitions (continued)
Pin number
Pin name
(function after
reset)(1)
Pin type
I / O structure
Notes
Alternate functions Additional functions
LQFP64
WLCSP90
LQFP100
LQFP144
UFBGA176
LQFP176
Pinouts and pin description STM32F415xx, STM32F417xx
52/182 Doc ID 022063 Rev 3
----K1289 PH12 I/OFT TIM5_CH3 / DCMI_D3/
EVENTOUT
----H1290 V
SS S
----J1291 V
DD S
33 J3 51 73 P12 92 PB12 I/O FT
SPI2_NSS / I2S2_WS /
I2C2_SMBA/
USART3_CK/ TIM1_BKIN /
CAN2_RX /
OTG_HS_ULPI_D5/
ETH_RMII_TXD0 /
ETH_MII_TXD0/
OTG_HS_ID/ EVENTOUT
34 J1 52 74 P13 93 PB13 I/O FT
SPI2_SCK / I2S2_CK /
USART3_CTS/
TIM1_CH1N /CAN2_TX /
OTG_HS_ULPI_D6 /
ETH_RMII_TXD1 /
ETH_MII_TXD1/
EVENTOUT
OTG_HS_VBUS
35 J2 53 75 R14 94 PB14 I/O FT
SPI2_MISO/ TIM1_CH2N /
TIM12_CH1 /
OTG_HS_DM/
USART3_RTS /
TIM8_CH2N/I2S2ext_SD/
EVENTOUT
36 H1 54 76 R15 95 PB15 I/O FT
SPI2_MOSI / I2S2_SD/
TIM1_CH3N / TIM8_CH3N
/ TIM12_CH2 /
OTG_HS_DP/ EVENTOUT
- H2 55 77 P15 96 PD8 I/O FT FSMC_D13 / USART3_TX/
EVENTOUT
- H3 56 78 P14 97 PD9 I/O FT FSMC_D14 / USART3_RX/
EVENTOUT
- G3 57 79 N15 98 PD10 I/O FT FSMC_D15 / USART3_CK/
EVENTOUT
- G1 58 80 N14 99 PD11 I/O FT
FSMC_CLE /
FSMC_A16/USART3_CTS/
EVENTOUT
-G25981N13100 PD12 I/OFT
FSMC_ALE/
FSMC_A17/TIM4_CH1 /
USART3_RTS/
EVENTOUT
Table 6. STM32F41x pin and ball definitions (continued)
Pin number
Pin name
(function after
reset)(1)
Pin type
I / O structure
Notes
Alternate functions Additional functions
LQFP64
WLCSP90
LQFP100
LQFP144
UFBGA176
LQFP176
STM32F415xx, STM32F417xx Pinouts and pin description
Doc ID 022063 Rev 3 53/182
- - 60 82 M15 101 PD13 I/O FT FSMC_A18/TIM4_CH2/
EVENTOUT
---83-102 V
SS S
---84J13103 V
DD S
-F26185M14104 PD14 I/OFT FSMC_D0/TIM4_CH3/
EVENTOUT/ EVENTOUT
- F1 62 86 L14 105 PD15 I/O FT FSMC_D1/TIM4_CH4/
EVENTOUT
- - - 87 L15 106 PG2 I/O FT FSMC_A12/ EVENTOUT
- - - 88 K15 107 PG3 I/O FT FSMC_A13/ EVENTOUT
- - - 89 K14 108 PG4 I/O FT FSMC_A14/ EVENTOUT
- - - 90 K13 109 PG5 I/O FT FSMC_A15/ EVENTOUT
- - - 91 J15 110 PG6 I/O FT FSMC_INT2/ EVENTOUT
- - - 92 J14 111 PG7 I/O FT FSMC_INT3 /USART6_CK/
EVENTOUT
- - - 93 H14 112 PG8 I/O FT
USART6_RTS /
ETH_PPS_OUT/
EVENTOUT
---94G12113 V
SS S
---95H13114 V
DD S
37 F3 63 96 H15 115 PC6 I/O FT
I2S2_MCK /
TIM8_CH1/SDIO_D6 /
USART6_TX /
DCMI_D0/TIM3_CH1/
EVENTOUT
38 E1 64 97 G15 116 PC7 I/O FT
I2S3_MCK /
TIM8_CH2/SDIO_D7 /
USART6_RX /
DCMI_D1/TIM3_CH2/
EVENTOUT
39 E2 65 98 G14 117 PC8 I/O FT
TIM8_CH3/SDIO_D0
/TIM3_CH3/ USART6_CK /
DCMI_D2/ EVENTOUT
40 E3 66 99 F14 118 PC9 I/O FT
I2S_CKIN/ MCO2 /
TIM8_CH4/SDIO_D1 /
/I2C3_SDA / DCMI_D3 /
TIM3_CH4/ EVENTOUT
Table 6. STM32F41x pin and ball definitions (continued)
Pin number
Pin name
(function after
reset)(1)
Pin type
I / O structure
Notes
Alternate functions Additional functions
LQFP64
WLCSP90
LQFP100
LQFP144
UFBGA176
LQFP176
Pinouts and pin description STM32F415xx, STM32F417xx
54/182 Doc ID 022063 Rev 3
41 D1 67 100 F15 119 PA8 I/O FT
MCO1 / USART1_CK/
TIM1_CH1/ I2C3_SCL/
OTG_FS_SOF/
EVENTOUT
42 D2 68 101 E15 120 PA9 I/O FT
USART1_TX/ TIM1_CH2 /
I2C3_SMBA / DCMI_D0/
EVENTOUT
OTG_FS_VBUS
43 D3 69 102 D15 121 PA10 I/O FT
USART1_RX/ TIM1_CH3/
OTG_FS_ID/DCMI_D1/
EVENTOUT
44 C1 70 103 C15 122 PA11 I/O FT
USART1_CTS / CAN1_RX
/ TIM1_CH4 /
OTG_FS_DM/ EVENTOUT
45 C2 71 104 B15 123 PA12 I/O FT
USART1_RTS / CAN1_TX/
TIM1_ETR/ OTG_FS_DP/
EVENTOUT
46 F8 72 105 A15 124 PA 1 3
(JTMS-SWDIO) I/O FT JTMS-SWDIO/ EVENTOUT
47 B1 73 106 F13 125 VCAP_2 S
-E774107F12126 V
SS S
48 E6 75 108 G13 127 VDD S
- - - - E12 128 PH13 I/O FT TIM8_CH1N / CAN1_TX/
EVENTOUT
- - - - E13 129 PH14 I/O FT TIM8_CH2N / DCMI_D4/
EVENTOUT
----D13130 PH15 I/OFT TIM8_CH3N / DCMI_D11/
EVENTOUT
-C3- -E14131 PI0 I/OFT
TIM5_CH4 / SPI2_NSS /
I2S2_WS / DCMI_D13/
EVENTOUT
-B2- -D14132 PI1 I/OFT SPI2_SCK / I2S2_CK /
DCMI_D8/ EVENTOUT
----C14133 PI2 I/OFT
TIM8_CH4 /SPI2_MISO /
DCMI_D9 / I2S2ext_SD/
EVENTOUT
----C13134 PI3 I/OFT
TIM8_ETR / SPI2_MOSI /
I2S2_SD / DCMI_D10/
EVENTOUT
----D9135 V
SS S
----C9136 V
DD S
Table 6. STM32F41x pin and ball definitions (continued)
Pin number
Pin name
(function after
reset)(1)
Pin type
I / O structure
Notes
Alternate functions Additional functions
LQFP64
WLCSP90
LQFP100
LQFP144
UFBGA176
LQFP176
STM32F415xx, STM32F417xx Pinouts and pin description
Doc ID 022063 Rev 3 55/182
49 A2 76 109 A14 137 PA 1 4
(JTCK-SWCLK) I/O FT JTCK-SWCLK/ EVENTOUT
50 B3 77 110 A13 138 PA 1 5
(JTDI) I/O FT
JTDI/ SPI3_NSS/
I2S3_WS/TIM2_CH1_ETR
/ SPI1_NSS / EVENTOUT
51 D5 78 111 B14 139 PC10 I/O FT
SPI3_SCK / I2S3_CK/
UART4_TX/SDIO_D2 /
DCMI_D8 / USART3_TX/
EVENTOUT
52 C4 79 112 B13 140 PC11 I/O FT
UART4_RX/ SPI3_MISO /
SDIO_D3 /
DCMI_D4/USART3_RX /
I2S3ext_SD/ EVENTOUT
53 A3 80 113 A12 141 PC12 I/O FT
UART5_TX/SDIO_CK /
DCMI_D9 / SPI3_MOSI
/I2S3_SD / USART3_CK/
EVENTOUT
- D6 81 114 B12 142 PD0 I/O FT FSMC_D2/CAN1_RX/
EVENTOUT
-C582115C12143 PD1 I/OFT FSMC_D3 / CAN1_TX/
EVENTOUT
54 B4 83 116 D12 144 PD2 I/O FT
TIM3_ETR/UART5_RX/
SDIO_CMD / DCMI_D11/
EVENTOUT
- - 84 117 D11 145 PD3 I/O FT FSMC_CLK/USART2_CTS
/ EVENTOUT
-A485118D10146 PD4 I/OFT FSMC_NOE/USART2_RTS
/ EVENTOUT
-C686119C11147 PD5 I/OFT FSMC_NWE/USART2_TX/
EVENTOUT
- - - 120 D8 148 VSS S
- - - 121 C8 149 VDD S
- B5 87 122 B11 150 PD6 I/O FT FSMC_NWAIT/
USART2_RX/ EVENTOUT
- A5 88 123 A11 151 PD7 I/O FT USART2_CK/FSMC_NE1/
FSMC_NCE2/ EVENTOUT
---124C10152 PG9 I/OFT
USART6_RX /
FSMC_NE2/FSMC_NCE3/
EVENTOUT
Table 6. STM32F41x pin and ball definitions (continued)
Pin number
Pin name
(function after
reset)(1)
Pin type
I / O structure
Notes
Alternate functions Additional functions
LQFP64
WLCSP90
LQFP100
LQFP144
UFBGA176
LQFP176
Pinouts and pin description STM32F415xx, STM32F417xx
56/182 Doc ID 022063 Rev 3
- - - 125 B10 153 PG10 I/O FT FSMC_NCE4_1/
FSMC_NE3/ EVENTOUT
- - - 126 B9 154 PG11 I/O FT
FSMC_NCE4_2 /
ETH_MII_TX_EN/
ETH _RMII_TX_EN/
EVENTOUT
- - - 127 B8 155 PG12 I/O FT
FSMC_NE4 /
USART6_RTS/
EVENTOUT
- - - 128 A8 156 PG13 I/O FT
FSMC_A24 /
USART6_CTS
/ETH_MII_TXD0/
ETH_RMII_TXD0/
EVENTOUT
- - - 129 A7 157 PG14 I/O FT
FSMC_A25 / USART6_TX
/ETH_MII_TXD1/
ETH_RMII_TXD1/
EVENTOUT
- E8 - 130 D7 158 VSS S
- F7 - 131 C7 159 VDD S
- - - 132 B7 160 PG15 I/O FT USART6_CTS /
DCMI_D13/ EVENTOUT
55 B6 89 133 A10 161
PB3
(JTDO/
TRACESWO)
I/O FT
JTDO/ TRACESWO/
SPI3_SCK / I2S3_CK /
TIM2_CH2 / SPI1_SCK/
EVENTOUT
56 A6 90 134 A9 162 PB4
(NJTRST) I/O FT
NJTRST/ SPI3_MISO /
TIM3_CH1 / SPI1_MISO /
I2S3ext_SD/ EVENTOUT
57 D7 91 135 A6 163 PB5 I/O FT
I2C1_SMBA/ CAN2_RX /
OTG_HS_ULPI_D7 /
ETH_PPS_OUT/TIM3_CH
2 / SPI1_MOSI/
SPI3_MOSI / DCMI_D10 /
I2S3_SD/ EVENTOUT
58 C7 92 136 B6 164 PB6 I/O FT
I2C1_SCL/ TIM4_CH1 /
CAN2_TX /
DCMI_D5/USART1_TX/
EVENTOUT
Table 6. STM32F41x pin and ball definitions (continued)
Pin number
Pin name
(function after
reset)(1)
Pin type
I / O structure
Notes
Alternate functions Additional functions
LQFP64
WLCSP90
LQFP100
LQFP144
UFBGA176
LQFP176
STM32F415xx, STM32F417xx Pinouts and pin description
Doc ID 022063 Rev 3 57/182
59 B7 93 137 B5 165 PB7 I/O FT
I2C1_SDA / FSMC_NL /
DCMI_VSYNC /
USART1_RX/ TIM4_CH2/
EVENTOUT
60 A7 94 138 D6 166 BOOT0 I B VPP
61 D8 95 139 A5 167 PB8 I/O FT
TIM4_CH3/SDIO_D4/
TIM10_CH1 / DCMI_D6 /
ETH_MII_TXD3 /
I2C1_SCL/ CAN1_RX/
EVENTOUT
62 C8 96 140 B4 168 PB9 I/O FT
SPI2_NSS/ I2S2_WS /
TIM4_CH4/ TIM11_CH1/
SDIO_D5 / DCMI_D7 /
I2C1_SDA / CAN1_TX/
EVENTOUT
- - 97 141 A4 169 PE0 I/O FT TIM4_ETR / FSMC_NBL0 /
DCMI_D2/ EVENTOUT
- - 98 142 A3 170 PE1 I/O FT FSMC_NBL1 / DCMI_D3/
EVENTOUT
63 - 99 - D5 - VSS S
- A8 - 143 C6 171 PDR_ON I FT
64 A1 10
0144 C5 172 VDD S
----D4173 PI4 I/OFT TIM8_BKIN / DCMI_D5/
EVENTOUT
----C4174 PI5 I/OFT
TIM8_CH1 /
DCMI_VSYNC/
EVENTOUT
----C3175 PI6 I/OFT TIM8_CH2 / DCMI_D6/
EVENTOUT
----C2176 PI7 I/OFT TIM8_CH3 / DCMI_D7/
EVENTOUT
1. Function availability depends on the chosen device.
2. PC13, PC14, PC15 and PI8 are supplied through the power switch. Since the switch only sinks a limited amount of current
(3 mA), the use of GPIOs PC13 to PC15 and PI8 in output mode is limited:
- The speed should not exceed 2 MHz with a maximum load of 30 pF.
- These I/Os must not be used as a current source (e.g. to drive an LED).
3. Main function after the first backup domain power-up. Later on, it depends on the contents of the RTC registers even after
reset (because these registers are not reset by the main reset). For details on how to manage these I/Os, refer to the RTC
register description sections in the STM32F4xx reference manual, available from the STMicroelectronics website:
www.st.com.
4. FT = 5 V tolerant except when in analog mode or oscillator mode (for PC14, PC15, PH0 and PH1).
Table 6. STM32F41x pin and ball definitions (continued)
Pin number
Pin name
(function after
reset)(1)
Pin type
I / O structure
Notes
Alternate functions Additional functions
LQFP64
WLCSP90
LQFP100
LQFP144
UFBGA176
LQFP176
Pinouts and pin description STM32F415xx, STM32F417xx
58/182 Doc ID 022063 Rev 3
5. If the device is delivered in an UFBGA176 or WLCSP90 and the BYPASS_REG pin is set to VDD (Regulator off/internal
reset ON mode), then PA0 is used as an internal Reset (active low).
Table 7. FSMC pin definition
Pins(1)
FSMC
LQFP100(2) WLCSP90
(2)
CF NOR/PSRAM/
SRAM NOR/PSRAM Mux NAND 16 bit
PE2 A23 A23 Yes
PE3 A19 A19 Yes
PE4 A20 A20 Yes
PE5 A21 A21 Yes
PE6 A22 A22 Yes
PF0 A0 A0 - -
PF1 A1 A1 - -
PF2 A2 A2 - -
PF3 A3 A3 - -
PF4 A4 A4 - -
PF5 A5 A5 - -
PF6 NIORD - -
PF7 NREG - -
PF8 NIOWR - -
PF9 CD - -
PF10 INTR - -
PF12 A6 A6 - -
PF13 A7 A7 - -
PF14 A8 A8 - -
PF15 A9 A9 - -
PG0 A10 A10 - -
PG1 A11 - -
PE7 D4 D4 DA4 D4 Yes Yes
PE8 D5 D5 DA5 D5 Yes Yes
PE9 D6 D6 DA6 D6 Yes Yes
PE10 D7 D7 DA7 D7 Yes Yes
PE11 D8 D8 DA8 D8 Yes Yes
PE12 D9 D9 DA9 D9 Yes Yes
PE13 D10 D10 DA10 D10 Yes Yes
PE14 D11 D11 DA11 D11 Yes Yes
PE15 D12 D12 DA12 D12 Yes Yes
STM32F415xx, STM32F417xx Pinouts and pin description
Doc ID 022063 Rev 3 59/182
PD8 D13 D13 DA13 D13 Yes Yes
PD9 D14 D14 DA14 D14 Yes Yes
PD10 D15 D15 DA15 D15 Yes Yes
PD11 A16 A16 CLE Yes Yes
PD12 A17 A17 ALE Yes Yes
PD13 A18 A18 Yes
PD14 D0 D0 DA0 D0 Yes
PD15 D1 D1 DA1 D1 Yes
PG2 A12 - -
PG3 A13 - -
PG4 A14 - -
PG5 A15 - -
PG6 INT2 - -
PG7 INT3 - -
PD0 D2 D2 DA2 D2 Yes Yes
PD1 D3 D3 DA3 D3 Yes Yes
PD3 CLK CLK Yes
PD4 NOE NOE NOE NOE Yes Yes
PD5 NWE NWE NWE NWE Yes Yes
PD6 NWAIT NWAIT NWAIT NWAIT Yes Yes
PD7 NE1 NE1 NCE2 Yes Yes
PG9 NE2 NE2 NCE3 - -
PG10 NCE4_1 NE3 NE3 - -
PG11 NCE4_2 - -
PG12 NE4 NE4 - -
PG13 A24 A24 - -
PG14 A25 A25 - -
PB7 NADV NADV Yes Yes
PE0 NBL0 NBL0 Yes
PE1 NBL1 NBL1 Yes
1. Full FSMC features are available on LQFP144, LQFP176, and UFBGA176. The features available on
smaller packages are given in the dedicated package column.
2. Ports F and G are not available in devices delivered in 100-pin packages.
Table 7. FSMC pin definition (continued)
Pins(1)
FSMC
LQFP100(2) WLCSP90
(2)
CF NOR/PSRAM/
SRAM NOR/PSRAM Mux NAND 16 bit
Pinouts and pin description STM32F415xx, STM32F417xx
60/182 Doc ID 022063 Rev 3
Table 8. Alternate function mapping
Port
AF0 AF1 AF2 AF3 AF4 AF5 AF6 AF7 AF8 AF9 AF10 AF11 AF12 AF13
AF014 AF15
SYS TIM1/2 TIM3/4/5 TIM8/9/10/11 I2C1/2/3 SPI1/SPI2/
I2S2/I2S2ext
SPI3/I2Sext/
I2S3
USART1/2/3/
I2S3ext
UART4/5/
USART6
CAN1/CAN2/
TIM12/13/14 OTG_FS/ OTG_HS ETH FSMC/SDIO/
OTG_FS DCMI
Port A
PA 0 TIM2_CH1
TIM2_ETR TIM 5_CH1 TIM8_ETR USART2_CTS UART4_TX ETH_MII_CRS EVENTOUT
PA1 TIM2_CH2 TIM5_CH2 USART2_RTS UART4_RX
ETH_MII _RX_CLK
ETH_RMII__REF_
CLK
EVENTOUT
PA2 TIM2_CH3 TIM5_CH3 TIM9_CH1 USART2_TX ETH_MDIO EVENTOUT
PA3 TIM2_CH4 TIM5_CH4 TIM9_CH2 USART2_RX OTG_HS_ULPI_D0 ETH _MII_COL EVENTOUT
PA 4 SPI1_NSS SPI3_NSS
I2S3_WS USART2_CK OTG_HS_SOF DCMI_HSYNC EVENTOUT
PA 5 TIM2_CH1
TIM2_ETR TIM8_CH1N SPI1_SCK OTG_HS_ULPI_CK EVENTOUT
PA6 TIM1_BKIN TIM3_CH1 TIM8_BKIN SPI1_MISO TIM13_CH1 DCMI_PIXCK EVENTOUT
PA7 TIM1_CH1N TIM3_CH2 TIM8_CH1N SPI1_MOSI TIM14_CH1 ETH_MII _RX_DV
ETH_RMII _CRS_DV EVENTOUT
PA8 MCO1 TIM1_CH1 I2C3_SCL USART1_CK OTG_FS_SOF EVENTOUT
PA9 TIM1_CH2 I2C3_SMBA USART1_TX DCMI_D0 EVENTOUT
PA10 TIM1_CH3 USART1_RX OTG_FS_ID DCMI_D1 EVENTOUT
PA11 TIM1_CH4 USART1_CTS CAN1_RX OTG_FS_DM EVENTOUT
PA12 TIM1_ETR USART1_RTS CAN1_TX OTG_FS_DP EVENTOUT
PA 1 3 J T M S - SW D I O EVENTOUT
PA14 JTCK-SWCLK EVENTOUT
PA 1 5 J T D I TIM 2_CH1
TIM 2_ETR SPI1_NSS SPI3_NSS/
I2S3S_WS EVENTOUT
STM32F415xx, STM32F417xx Pinouts and pin description
Doc ID 022063 Rev 3 61/182
Port B
PB0 TIM1_CH2N TIM3_CH3 TIM8_CH2N OTG_HS_ULPI_D1 ETH _MII_RXD2 EVENTOUT
PB1 TIM1_CH3N TIM3_CH4 TIM8_CH3N OTG_HS_ULPI_D2 ETH _MII_RXD3 EVENTOUT
PB2 EVENTOUT
PB3 JTDO/
TRACESWO
TIM2_CH2 SPI1_SCK
SPI3_SCK
I2S3_CK EVENTOUT
PB4 NJTRST TIM3_CH1 SPI1_MISO SPI3_MISO I2S3ext_SD EVENTOUT
PB5 TIM3_CH2 I2C1_SMBA SPI1_MOSI
SPI3_MOSI
I2S3_SD CAN2_RX OTG_HS_ULPI_D7 ETH _PPS_OUT DCMI_D10 EVENTOUT
PB6 TIM4_CH1 I2C1_SCL USART1_TX CAN2_TX DCMI_D5 EVENTOUT
PB7 TIM4_CH2 I2C1_SDA USART1_RX FSMC_NL DCMI_VSYNC EVENTOUT
PB8 TIM4_CH3 TIM10_CH1 I2C1_SCL CAN1_RX ETH _MII_TXD3 SDIO_D4 DCMI_D6 EVENTOUT
PB9 TIM4_CH4 TIM11_CH1 I2C1_SDA
SPI2_NSS
I2S2_WS CAN1_TX SDIO_D5 DCMI_D7 EVENTOUT
PB10 TIM2_CH3 I2C2_SCL
SPI2_SCK
I2S2_CK USART3_TX OTG_HS_ULPI_D3 ETH_ MII_RX_ER EVENTOUT
PB11 TIM2_CH4 I2C2_SDA USART3_RX OTG_HS_ULPI_D4
ETH _MII_TX_EN
ETH _RMII_TX_EN EVENTOUT
PB12 TIM1_BKIN I2C2_SMBA SPI2_NSS
I2S2_WS USART3_CK CAN2_RX OTG_HS_ULPI_D5
ETH _MII_TXD0
ETH _RMII_TXD0 OTG_HS_ID EVENTOUT
PB13 TIM1_CH1N SPI2_SCK
I2S2_CK USART3_CTS CAN2_TX OTG_HS_ULPI_D6
ETH _MII_TXD1
ETH _RMII_TXD1 EVENTOUT
PB14 TIM1_CH2N TIM8_CH2N SPI2_MISO I2S2ext_SD USART3_RTS TIM12_CH1 OTG_HS_DM EVENTOUT
PB15 RTC_50Hz TIM1_CH3N TIM8_CH3N SPI2_MOSI
I2S2_SD TIM12_CH2 OTG_HS_DP EVENTOUT
Por t C
PC0 OTG_HS_ULPI_STP EVENTOUT
PC1 ETH_MDC EVENTOUT
PC2 SPI2_MISO I2S2ext_SD OTG_HS_ULPI_DIR ETH _MII_TXD2 EVENTOUT
PC3 SPI2_MOSI
I2S2_SD OTG_HS_ULPI_NXT ETH _MII_TX_CLK EVENTOUT
PC4 ETH_MII_RXD0
ETH_RMII_RXD0 EVENTOUT
PC5 ETH _MII_RXD1
ETH _RMII_RXD1 EVENTOUT
PC6 TIM3_CH1 TIM8_CH1 I2S2_MCK USART6_TX SDIO_D6 DCMI_D0 EVENTOUT
PC7 TIM3_CH2 TIM8_CH2 I2S3_MCK USART6_RX SDIO_D7 DCMI_D1 EVENTOUT
PC8 TIM3_CH3 TIM8_CH3 USART6_CK SDIO_D0 DCMI_D2 EVENTOUT
PC9 MCO2 TIM3_CH4 TIM8_CH4 I2C3_SDA I2S_CKIN SDIO_D1 DCMI_D3 EVENTOUT
PC10 SPI3_SCK/
I2S3S_CK USART3_TX/ UART4_TX SDIO_D2 DCMI_D8 EVENTOUT
PC11 I2S3ext_SD SPI3_MISO/ USART3_RX UART4_RX SDIO_D3 DCMI_D4 EVENTOUT
PC12 SPI3_MOSI
I2S3_SD USART3_CK UART5_TX SDIO_CK DCMI_D9 EVENTOUT
PC13
PC14
PC15
Table 8. Alternate function mapping (continued)
Port
AF0 AF1 AF2 AF3 AF4 AF5 AF6 AF7 AF8 AF9 AF10 AF11 AF12 AF13
AF014 AF15
SYS TIM1/2 TIM3/4/5 TIM8/9/10/11 I2C1/2/3 SPI1/SPI2/
I2S2/I2S2ext
SPI3/I2Sext/
I2S3
USART1/2/3/
I2S3ext
UART4/5/
USART6
CAN1/CAN2/
TIM12/13/14 OTG_FS/ OTG_HS ETH FSMC/SDIO/
OTG_FS DCMI
Pinouts and pin description STM32F415xx, STM32F417xx
62/182 Doc ID 022063 Rev 3
Por t D
PD0 CAN1_RX FSMC_D2 EVENTOUT
PD1 CAN1_TX FSMC_D3 EVENTOUT
PD2 TIM3_ETR UART5_RX SDIO_CMD DCMI_D11 EVENTOUT
PD3 USART2_CTS FSMC_CLK EVENTOUT
PD4 USART2_RTS FSMC_NOE EVENTOUT
PD5 USART2_TX FSMC_NWE EVENTOUT
PD6 USART2_RX FSMC_NWAIT EVENTOUT
PD7 USART2_CK FSMC_NE1/
FSMC_NCE2 EVENTOUT
PD8 USART3_TX FSMC_D13 EVENTOUT
PD9 USART3_RX FSMC_D14 EVENTOUT
PD10 USART3_CK FSMC_D15 EVENTOUT
PD11 USART3_CTS FSMC_A16 EVENTOUT
PD12 TIM4_CH1 USART3_RTS FSMC_A17 EVENTOUT
PD13 TIM4_CH2 FSMC_A18 EVENTOUT
PD14 TIM4_CH3 FSMC_D0 EVENTOUT
PD15 TIM4_CH4 FSMC_D1 EVENTOUT
Port E
PE0 TIM4_ETR FSMC_NBL0 DCMI_D2 EVENTOUT
PE1 FSMC_BLN1 DCMI_D3 EVENTOUT
PE2 TRACECLK ETH _MII_TXD3 FSMC_A23 EVENTOUT
PE3 TRACED0 FSMC_A19 EVENTOUT
PE4 TRACED1 FSMC_A20 DCMI_D4 EVENTOUT
PE5 TRACED2 TIM9_CH1 FSMC_A21 DCMI_D6 EVENTOUT
PE6 TRACED3 TIM9_CH2 FSMC_A22 DCMI_D7 EVENTOUT
PE7 TIM1_ETR FSMC_D4 EVENTOUT
PE8 TIM1_CH1N FSMC_D5 EVENTOUT
PE9 TIM1_CH1 FSMC_D6 EVENTOUT
PE10 TIM1_CH2N FSMC_D7 EVENTOUT
PE11 TIM1_CH2 FSMC_D8 EVENTOUT
PE12 TIM1_CH3N FSMC_D9 EVENTOUT
PE13 TIM1_CH3 FSMC_D10 EVENTOUT
PE14 TIM1_CH4 FSMC_D11 EVENTOUT
PE15 TIM1_BKIN FSMC_D12 EVENTOUT
Table 8. Alternate function mapping (continued)
Port
AF0 AF1 AF2 AF3 AF4 AF5 AF6 AF7 AF8 AF9 AF10 AF11 AF12 AF13
AF014 AF15
SYS TIM1/2 TIM3/4/5 TIM8/9/10/11 I2C1/2/3 SPI1/SPI2/
I2S2/I2S2ext
SPI3/I2Sext/
I2S3
USART1/2/3/
I2S3ext
UART4/5/
USART6
CAN1/CAN2/
TIM12/13/14 OTG_FS/ OTG_HS ETH FSMC/SDIO/
OTG_FS DCMI
STM32F415xx, STM32F417xx Pinouts and pin description
Doc ID 022063 Rev 3 63/182
Por t F
PF0 I2C2_SDA FSMC_A0 EVENTOUT
PF1 I2C2_SCL FSMC_A1 EVENTOUT
PF2 I2C2_SMBA FSMC_A2 EVENTOUT
PF3 FSMC_A3 EVENTOUT
PF4 FSMC_A4 EVENTOUT
PF5 FSMC_A5 EVENTOUT
PF6 TIM10_CH1 FSMC_NIORD EVENTOUT
PF7 TIM11_CH1 FSMC_NREG EVENTOUT
PF8 TIM13_CH1 FSMC_NIOWR EVENTOUT
PF9 TIM14_CH1 FSMC_CD EVENTOUT
PF10 FSMC_INTR EVENTOUT
PF11 DCMI_D12 EVENTOUT
PF12 FSMC_A6 EVENTOUT
PF13 FSMC_A7 EVENTOUT
PF14 FSMC_A8 EVENTOUT
PF15 FSMC_A9 EVENTOUT
Por t G
PG0 FSMC_A10 EVENTOUT
PG1 FSMC_A11 EVENTOUT
PG2 FSMC_A12 EVENTOUT
PG3 FSMC_A13 EVENTOUT
PG4 FSMC_A14 EVENTOUT
PG5 FSMC_A15 EVENTOUT
PG6 FSMC_INT2 EVENTOUT
PG7 USART6_CK FSMC_INT3 EVENTOUT
PG8 USART6_RTS ETH _PPS_OUT EVENTOUT
PG9 USART6_RX FSMC_NE2/
FSMC_NCE3 EVENTOUT
PG10 FSMC_NCE4_1/
FSMC_NE3 EVENTOUT
PG11 ETH _MII_TX_EN
ETH _RMII_TX_EN FSMC_NCE4_2 EVENTOUT
PG12 USART6_RTS FSMC_NE4 EVENTOUT
PG13 UART6_CTS ETH _MII_TXD0
ETH _RMII_TXD0 FSMC_A24 EVENTOUT
PG14 USART6_TX ETH _MII_TXD1
ETH _RMII_TXD1 FSMC_A25 EVENTOUT
PG15 USART6_CTS DCMI_D13 EVENTOUT
Table 8. Alternate function mapping (continued)
Port
AF0 AF1 AF2 AF3 AF4 AF5 AF6 AF7 AF8 AF9 AF10 AF11 AF12 AF13
AF014 AF15
SYS TIM1/2 TIM3/4/5 TIM8/9/10/11 I2C1/2/3 SPI1/SPI2/
I2S2/I2S2ext
SPI3/I2Sext/
I2S3
USART1/2/3/
I2S3ext
UART4/5/
USART6
CAN1/CAN2/
TIM12/13/14 OTG_FS/ OTG_HS ETH FSMC/SDIO/
OTG_FS DCMI
Pinouts and pin description STM32F415xx, STM32F417xx
64/182 Doc ID 022063 Rev 3
Por t H
PH0
PH1
PH2 ETH _MII_CRS EVENTOUT
PH3 ETH _MII_COL EVENTOUT
PH4 I2C2_SCL OTG_HS_ULPI_NXT EVENTOUT
PH5 I2C2_SDA EVENTOUT
PH6 I2C2_SMBA TIM12_CH1 ETH _MII_RXD2 EVENTOUT
PH7 I2C3_SCL ETH _MII_RXD3 EVENTOUT
PH8 I2C3_SDA DCMI_HSYNC EVENTOUT
PH9 I2C3_SMBA TIM12_CH2 DCMI_D0 EVENTOUT
PH10 TIM5_CH1 DCMI_D1 EVENTOUT
PH11 TIM5_CH2 DCMI_D2 EVENTOUT
PH12 TIM5_CH3 DCMI_D3 EVENTOUT
PH13 TIM8_CH1N CAN1_TX EVENTOUT
PH14 TIM8_CH2N DCMI_D4 EVENTOUT
PH15 TIM8_CH3N DCMI_D11 EVENTOUT
Por t I
PI0 TIM5_CH4 SPI2_NSS
I2S2_WS DCMI_D13 EVENTOUT
PI1 SPI2_SCK
I2S2_CK DCMI_D8 EVENTOUT
PI2 TIM8_CH4 SPI2_MISO I2S2ext_SD DCMI_D9 EVENTOUT
PI3 TIM8_ETR SPI2_MOSI
I2S2_SD DCMI_D10 EVENTOUT
PI4 TIM8_BKIN DCMI_D5 EVENTOUT
PI5 TIM8_CH1 DCMI_VSYNC EVENTOUT
PI6 TIM8_CH2 DCMI_D6 EVENTOUT
PI7 TIM8_CH3 DCMI_D7 EVENTOUT
PI8
PI9 CAN1_RX EVENTOUT
PI10 ETH _MII_RX_ER EVENTOUT
PI11 OTG_HS_ULPI_DIR EVENTOUT
Table 8. Alternate function mapping (continued)
Port
AF0 AF1 AF2 AF3 AF4 AF5 AF6 AF7 AF8 AF9 AF10 AF11 AF12 AF13
AF014 AF15
SYS TIM1/2 TIM3/4/5 TIM8/9/10/11 I2C1/2/3 SPI1/SPI2/
I2S2/I2S2ext
SPI3/I2Sext/
I2S3
USART1/2/3/
I2S3ext
UART4/5/
USART6
CAN1/CAN2/
TIM12/13/14 OTG_FS/ OTG_HS ETH FSMC/SDIO/
OTG_FS DCMI
STM32F415xx, STM32F417xx Memory mapping
Doc ID 022063 Rev 3 65/182
4 Memory mapping
The memory map is shown in Figure 16.
Figure 16. STM32F41x memory map
-BYTE
BLOCK
#ORTEX-gS
INTERNAL
PERIPHERALS
-BYTE
BLOCK
.OTUSED
-BYTE
BLOCK
&3-#REGISTERS
-BYTE
BLOCK
&3-#BANK
BANK
-BYTE
BLOCK
&3-#BANK
BANK
-BYTE
BLOCK
0ERIPHERALS
-BYTE
BLOCK
32!-
X
X&&&&&&&
X
X&&&&&&&
X
X&&&&&&&
X
X&&&&&&&
X
X&&&&&&&
X!
X"&&&&&&&
X#
X$&&&&&&&
X%
X&&&&&&&&
-BYTE
BLOCK
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&LASH
XX&&&&&&&
X&&&X&&&!&
X&&&#X&&&#
XX&&&&&
XX&&&&&&
XX&&&&&
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2ESERVED
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2ESERVED
XX"&&&
X#X&&&&
XX&&&&&&&
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XX&&&&
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X&&
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2ESERVED X#X&&&&&&&
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/PTION"YTES
2ESERVED XX&&&&
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XX&&&&&&&
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2ESERVED
X&&&#X&&&&&&&
X&&&!X&&&&&&
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##-DATA2!-
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XX&&&&
2ESERVED
XX&&%&&&&
2ESERVED
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X&&&&
!0"
#/24%8-INTERNALPERIPHERALS
X%X%&&&&&
2ESERVED
X%X&&&&&&&&
Memory mapping STM32F415xx, STM32F417xx
66/182 Doc ID 022063 Rev 3
Table 9. STM32F41x register boundary addresses
Bus Boundary address Peripheral
0xE00F FFFF - 0xFFFF FFFF Reserved
Cortex-M4 0xE000 0000 - 0xE00F FFFF Cortex-M4 internal peripherals
0xA000 1000 - 0xDFFF FFFF Reserved
AHB3
0xA000 0000 - 0xA000 0FFF FSMC control register
0x9000 0000 - 0x9FFF FFFF FSMC bank 4
0x8000 0000 - 0x8FFF FFFF FSMC bank 3
0x7000 0000 - 0x7FFF FFFF FSMC bank 2
0x6000 0000 - 0x6FFF FFFF FSMC bank 1
0x5006 0C00- 0x5FFF FFFF Reserved
AHB2
0x5006 0800 - 0X5006 0BFF RNG
0x5006 0400 - 0X5006 07FF HASH
0x5006 0000 - 0X5006 03FF CRYP
0x5005 0400 - 0x5005 FFFF Reserved
0x5005 0000 - 0X5005 03FF DCMI
0x5004 0000- 0x5004 FFFF Reserved
0x5000 0000 - 0X5003 FFFF USB OTG FS
0x4008 0000- 0x4FFF FFFF Reserved
STM32F415xx, STM32F417xx Memory mapping
Doc ID 022063 Rev 3 67/182
AHB1
0x4004 0000 - 0x4007 FFFF USB OTG HS
0x4002 9400 - 0x4003 FFFF Reserved
0x4002 9000 - 0x4002 93FF
ETHERNET MAC
0x4002 8C00 - 0x4002 8FFF
0x4002 8800 - 0x4002 8BFF
0x4002 8400 - 0x4002 87FF
0x4002 8000 - 0x4002 83FF
0x4002 6800 - 0x4002 7FFF Reserved
0x4002 6400 - 0x4002 67FF DMA2
0x4002 6000 - 0x4002 63FF DMA1
0X4002 5000 - 0X4002 5FFF Reserved
0x4002 4000 - 0x4002 4FFF BKPSRAM
0x4002 3C00 - 0x4002 3FFF Flash interface register
0x4002 3800 - 0x4002 3BFF RCC
0X4002 3400 - 0X4002 37FF Reserved
0x4002 3000 - 0x4002 33FF CRC
0x4002 2400 - 0x4002 2FFF Reserved
0x4002 2000 - 0x4002 23FF GPIOI
0x4002 1C00 - 0x4002 1FFF GPIOH
0x4002 1800 - 0x4002 1BFF GPIOG
0x4002 1400 - 0x4002 17FF GPIOF
0x4002 1000 - 0x4002 13FF GPIOE
0X4002 0C00 - 0x4002 0FFF GPIOD
0x4002 0800 - 0x4002 0BFF GPIOC
0x4002 0400 - 0x4002 07FF GPIOB
0x4002 0000 - 0x4002 03FF GPIOA
0x4001 5800- 0x4001 FFFF Reserved
Table 9. STM32F41x register boundary addresses (continued)
Bus Boundary address Peripheral
Memory mapping STM32F415xx, STM32F417xx
68/182 Doc ID 022063 Rev 3
APB2
0x4001 4C00 - 0x4001 57FF Reserved
0x4001 4800 - 0x4001 4BFF TIM11
0x4001 4400 - 0x4001 47FF TIM10
0x4001 4000 - 0x4001 43FF TIM9
0x4001 3C00 - 0x4001 3FFF EXTI
0x4001 3800 - 0x4001 3BFF SYSCFG
0x4001 3400 - 0x4001 37FF Reserved
0x4001 3000 - 0x4001 33FF SPI1
0x4001 2C00 - 0x4001 2FFF SDIO
0x4001 2400 - 0x4001 2BFF Reserved
0x4001 2000 - 0x4001 23FF ADC1 - ADC2 - ADC3
0x4001 1800 - 0x4001 1FFF Reserved
0x4001 1400 - 0x4001 17FF USART6
0x4001 1000 - 0x4001 13FF USART1
0x4001 0800 - 0x4001 0FFF Reserved
0x4001 0400 - 0x4001 07FF TIM8
0x4001 0000 - 0x4001 03FF TIM1
0x4000 7800- 0x4000 FFFF Reserved
Table 9. STM32F41x register boundary addresses (continued)
Bus Boundary address Peripheral
STM32F415xx, STM32F417xx Memory mapping
Doc ID 022063 Rev 3 69/182
APB1
0x4000 7800 - 0x4000 7FFF Reserved
0x4000 7400 - 0x4000 77FF DAC
0x4000 7000 - 0x4000 73FF PWR
0x4000 6C00 - 0x4000 6FFF Reserved
0x4000 6800 - 0x4000 6BFF CAN2
0x4000 6400 - 0x4000 67FF CAN1
0x4000 6000 - 0x4000 63FF Reserved
0x4000 5C00 - 0x4000 5FFF I2C3
0x4000 5800 - 0x4000 5BFF I2C2
0x4000 5400 - 0x4000 57FF I2C1
0x4000 5000 - 0x4000 53FF UART5
0x4000 4C00 - 0x4000 4FFF UART4
0x4000 4800 - 0x4000 4BFF USART3
0x4000 4400 - 0x4000 47FF USART2
0x4000 4000 - 0x4000 43FF I2S3ext
0x4000 3C00 - 0x4000 3FFF SPI3 / I2S3
0x4000 3800 - 0x4000 3BFF SPI2 / I2S2
0x4000 3400 - 0x4000 37FF I2S2ext
0x4000 3000 - 0x4000 33FF IWDG
0x4000 2C00 - 0x4000 2FFF WWDG
0x4000 2800 - 0x4000 2BFF RTC & BKP Registers
0x4000 2400 - 0x4000 27FF Reserved
0x4000 2000 - 0x4000 23FF TIM14
0x4000 1C00 - 0x4000 1FFF TIM13
0x4000 1800 - 0x4000 1BFF TIM12
0x4000 1400 - 0x4000 17FF TIM7
0x4000 1000 - 0x4000 13FF TIM6
0x4000 0C00 - 0x4000 0FFF TIM5
0x4000 0800 - 0x4000 0BFF TIM4
0x4000 0400 - 0x4000 07FF TIM3
0x4000 0000 - 0x4000 03FF TIM2
Table 9. STM32F41x register boundary addresses (continued)
Bus Boundary address Peripheral
Electrical characteristics STM32F415xx, STM32F417xx
70/182 Doc ID 022063 Rev 3
5 Electrical characteristics
5.1 Parameter conditions
Unless otherwise specified, all voltages are referenced to VSS.
5.1.1 Minimum and maximum values
Unless otherwise specified the minimum and maximum values are guaranteed in the worst
conditions of ambient temperature, supply voltage and frequencies by tests in production on
100% of the devices with an ambient temperature at TA = 25 °C and TA = TAmax (given by
the selected temperature range).
Data based on characterization results, design simulation and/or technology characteristics
are indicated in the table footnotes and are not tested in production. Based on
characterization, the minimum and maximum values refer to sample tests and represent the
mean value plus or minus three times the standard deviation (mean±3Σ).
5.1.2 Typical values
Unless otherwise specified, typical data are based on TA = 25 °C, VDD = 3.3 V (for the
1.8 V ≤VDD ≤3.6 V voltage range). They are given only as design guidelines and are not
tested.
Typical ADC accuracy values are determined by characterization of a batch of samples from
a standard diffusion lot over the full temperature range, where 95% of the devices have an
error less than or equal to the value indicated (mean±2Σ).
5.1.3 Typical curves
Unless otherwise specified, all typical curves are given only as design guidelines and are
not tested.
5.1.4 Loading capacitor
The loading conditions used for pin parameter measurement are shown in Figure 17.
5.1.5 Pin input voltage
The input voltage measurement on a pin of the device is described in Figure 18.
Figure 17. Pin loading conditions Figure 18. Pin input voltage
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STM32F415xx, STM32F417xx Electrical characteristics
Doc ID 022063 Rev 3 71/182
5.1.6 Power supply scheme
Figure 19. Power supply scheme
1. Each power supply pair must be decoupled with filtering ceramic capacitors as shown above. These capacitors must be
placed as close as possible to, or below, the appropriate pins on the underside of the PCB to ensure the good functionality
of the device.
2. To connect BYPASS_REG and PDR_ON pins, refer to Section 2.2.16: Voltage regulator.
3. The two 2.2 µF ceramic capacitors should not be connected when the voltage regulator is OFF.
4. The 4.7 µF ceramic capacitor must be connected to one of the VDD pin.
5. VDDA=VDD and VSSA=VSS.
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Electrical characteristics STM32F415xx, STM32F417xx
72/182 Doc ID 022063 Rev 3
5.1.7 Current consumption measurement
Figure 20. Current consumption measurement scheme
5.2 Absolute maximum ratings
Stresses above the absolute maximum ratings listed in Table 10: Voltage characteristics,
Table 11: Current characteristics, and Table 12: Thermal characteristics may cause
permanent damage to the device. These are stress ratings only and functional operation of
the device at these conditions is not implied. Exposure to maximum rating conditions for
extended periods may affect device reliability.
ai14126
VBAT
VDD
VDDA
IDD_VBAT
IDD
Table 10. Voltage characteristics
Symbol Ratings Min Max Unit
VDD–VSS External main supply voltage (including VDDA, VDD)(1)
1. All main power (VDD, VDDA) and ground (VSS, VSSA) pins must always be connected to the external power
supply, in the permitted range.
–0.3 4.0
V
VIN
Input voltage on five-volt tolerant pin(2)
2. VIN maximum value must always be respected. Refer to Table 11 for the values of the maximum allowed
injected current.
VSS–0.3 VDD+4
Input voltage on any other pin VSS–0.3 4.0
|ΔVDDx| Variations between different VDD power pins - 50 mV
|VSSX − VSS| Variations between all the different ground pins - 50
VESD(HBM) Electrostatic discharge voltage (human body model)
see Section 5.3.14:
Absolute maximum
ratings (electrical
sensitivity)
STM32F415xx, STM32F417xx Electrical characteristics
Doc ID 022063 Rev 3 73/182
5.3 Operating conditions
5.3.1 General operating conditions
Table 11. Current characteristics
Symbol Ratings Max. Unit
IVDD Total current into VDD power lines (source)(1)
1. All main power (VDD, VDDA) and ground (VSS, VSSA) pins must always be connected to the external power
supply, in the permitted range.
150
mA
IVSS Total current out of VSS ground lines (sink)(1) 150
IIO
Output current sunk by any I/O and control pin 25
Output current source by any I/Os and control pin 25
IINJ(PIN) (2)
2. Negative injection disturbs the analog performance of the device. See note in Section 5.3.20: 12-bit ADC
characteristics.
Injected current on five-volt tolerant I/O(3)
3. Positive injection is not possible on these I/Os. A negative injection is induced by VIN<VSS. IINJ(PIN) must
never be exceeded. Refer to Table 10 for the values of the maximum allowed input voltage.
–5/+0
Injected current on any other pin(4)
4. A positive injection is induced by VIN>VDD while a negative injection is induced by VIN<VSS. IINJ(PIN) must
never be exceeded. Refer to Table 10 for the values of the maximum allowed input voltage.
±5
ΣIINJ(PIN)(4) Total injected current (sum of all I/O and control pins)(5)
5. When several inputs are submitted to a current injection, the maximum ΣIINJ(PIN) is the absolute sum of the
positive and negative injected currents (instantaneous values).
±25
Table 12. Thermal characteristics
Symbol Ratings Value Unit
TSTG Storage temperature range –65 to +150 °C
TJMaximum junction temperature 125 °C
Table 13. General operating conditions
Symbol Parameter Conditions Min Max Unit
fHCLK Internal AHB clock frequency VOS bit in PWR_CR register = 0(1) 0 144
MHz
VOS bit in PWR_CR register= 1 0 168
fPCLK1 Internal APB1 clock frequency 0 42
fPCLK2 Internal APB2 clock frequency 0 84
VDD Standard operating voltage 1.8(2) 3.6 V
VDDA(3)(4)
Analog operating voltage
(ADC limited to 1.2 M samples) Must be the same potential as VDD(5)
1.8(2) 3.6
V
Analog operating voltage
(ADC limited to 1.4 M samples) 2.4 3.6
VBAT Backup operating voltage 1.65 3.6 V
Electrical characteristics STM32F415xx, STM32F417xx
74/182 Doc ID 022063 Rev 3
VCAP1 When the internal regulator is ON,
VCAP_1 and VCAP_2 pins are used to
connect a stabilization capacitor.
When the internal regulator is OFF
(BYPASS_REG connected to VDD),
VCAP_1 and VCAP_2 must be supplied
from 1.2 V.
1.1 1.3 V
VCAP2
PD
Power dissipation at TA = 85 °C for
suffix 6 or TA = 105 °C for suffix 7(6)
LQFP64 - 435
mW
LQFP100 - 465
LQFP144 - 500
LQFP176 - 526
UFBGA176 - 513
WLCSP90 - 543
TA
Ambient temperature for 6 suffix
version
Maximum power dissipation –40 85 °C
Low power dissipation(7) –40 105
Ambient temperature for 7 suffix
version
Maximum power dissipation –40 105 °C
Low power dissipation(7) –40 125
TJ Junction temperature range 6 suffix version –40 105 °C
7 suffix version –40 125
1. The average expected gain in power consumption when VOS = 0 compared to VOS = 1 is around 10% for the whole
temperature range, when the system clock frequency is between 30 and 144 MHz.
2. If an inverted reset signal is applied to PDR_ON, this value can be lowered to 1.7 V when the device operates in a reduced
temperature range (0 to 70 °C).
3. When the ADC is used, refer to Table 67: ADC characteristics.
4. If VREF+ pin is present, it must respect the following condition: VDDA-VREF+ < 1.2 V.
5. It is recommended to power VDD and VDDA from the same source. A maximum difference of 300 mV between VDD and
VDDA can be tolerated during power-up and power-down operation.
6. If TA is lower, higher PD values are allowed as long as TJ does not exceed TJmax.
7. In low power dissipation state, TA can be extended to this range as long as TJ does not exceed TJmax.
Table 13. General operating conditions (continued)
Symbol Parameter Conditions Min Max Unit
STM32F415xx, STM32F417xx Electrical characteristics
Doc ID 022063 Rev 3 75/182
Table 14. Limitations depending on the operating power supply range
Operating
power
supply
range
ADC
operation
Maximum
Flash
memory
access
frequency
(fFlashmax)
Number of wait
states at
maximum CPU
frequency(1)
I/O operation
Maximum
FSMC_CLK
frequency for
synchronous
accesses
Possible
Flash
memory
operations
VDD =1.8 to
2.1 V(2)
Conversion
time up to
1.2 Msps
16 MHz with
no Flash
memory wait
state(3)
7(3)(4)
– Degraded
speed
performance
– No I/O
compensation
up to 30 MHz
8-bit erase
and program
operations
only
VDD = 2.1 to
2.4 V
Conversion
time up to
1.2 Msps
18 MHz with
no Flash
memory wait
state
7(4)
– Degraded
speed
performance
– No I/O
compensation
up to 30 MHz
16-bit erase
and program
operations
VDD = 2.4 to
2.7 V
Conversion
time up to
2.4 Msps
24 MHz with
no Flash
memory wait
state
6(4)
– Degraded
speed
performance
– I/O
compensation
works
up to 48 MHz
16-bit erase
and program
operations
VDD = 2.7 to
3.6 V(5)
Conversion
time up to
2.4 Msps
30 MHz with
no Flash
memory wait
state
5(4)
– Full-speed
operation
– I/O
compensation
works
–up to
60 MHz
when VDD =
3.0 to 3.6 V
–up to
48 MHz
when VDD =
2.7 to 3.0 V
32-bit erase
and program
operations
1. The number of wait states can be reduced by reducing the CPU frequency.
2. If an inverted reset signal is applied to PDR_ON, this value can be lowered to 1.7 V when the device operates in a reduced
temperature range (0 to 70 °C).
3. Prefetch is not available. Refer to AN3430 application note for details on how to adjust performance and power.
4. Thanks to the ART accelerator and the 128-bit Flash memory, the number of wait states given here does not impact the
execution speed from Flash memory since the ART accelerator allows to achieve a performance equivalent to 0 wait state
program execution.
5. The voltage range for OTG USB FS can drop down to 2.7 V. However it is degraded between 2.7 and 3 V.
Electrical characteristics STM32F415xx, STM32F417xx
76/182 Doc ID 022063 Rev 3
5.3.2 VCAP1/VCAP2 external capacitor
Stabilization for the main regulator is achieved by connecting an external capacitor CEXT to
the VCAP1/VCAP2 pins. CEXT is specified in Ta b l e 1 5 .
Figure 21. External capacitor CEXT
1. Legend: ESR is the equivalent series resistance.
5.3.3 Operating conditions at power-up / power-down (regulator ON)
Subject to general operating conditions for TA.
Table 16. Operating conditions at power-up / power-down (regulator ON)
5.3.4 Operating conditions at power-up / power-down (regulator OFF)
Subject to general operating conditions for TA.
Table 15. VCAP1/VCAP2 operating conditions
Symbol Parameter Conditions
CEXT Capacitance of external capacitor 2.2 µF
ESR ESR of external capacitor < 2 Ω
MS19044V1
ESR
RLeak
C
Symbol Parameter Min Max Unit
tVDD
VDD rise time rate 20 ∞
µs/V
VDD fall time rate 20 ∞
Table 17. Operating conditions at power-up / power-down (regulator OFF)(1)
1. To reset the internal logic at power-down, a reset must be applied on pin PA0 when VDD reach below
1.08 V.
Symbol Parameter Conditions Min Max Unit
tVDD
VDD rise time rate Power-up 20 ∞
µs/V
VDD fall time rate Power-down 20 ∞
tVCAP
VCAP_1 and VCAP_2 rise time
rate Power-up 20 ∞
VCAP_1 and VCAP_2 fall time
rate Power-down 20 ∞
STM32F415xx, STM32F417xx Electrical characteristics
Doc ID 022063 Rev 3 77/182
5.3.5 Embedded reset and power control block characteristics
The parameters given in Ta b l e 1 8 are derived from tests performed under ambient
temperature and VDD supply voltage conditions summarized in Ta bl e 1 3 .
Table 18. Embedded reset and power control block characteristics
Symbol Parameter Conditions Min Typ Max Unit
VPVD
Programmable voltage
detector level selection
PLS[2:0]=000 (rising
edge) 2.09 2.14 2.19 V
PLS[2:0]=000 (falling
edge) 1.98 2.04 2.08 V
PLS[2:0]=001 (rising
edge) 2.23 2.30 2.37 V
PLS[2:0]=001 (falling
edge) 2.13 2.19 2.25 V
PLS[2:0]=010 (rising
edge) 2.39 2.45 2.51 V
PLS[2:0]=010 (falling
edge) 2.29 2.35 2.39 V
PLS[2:0]=011 (rising
edge) 2.54 2.60 2.65 V
PLS[2:0]=011 (falling
edge) 2.44 2.51 2.56 V
PLS[2:0]=100 (rising
edge) 2.70 2.76 2.82 V
PLS[2:0]=100 (falling
edge) 2.59 2.66 2.71 V
PLS[2:0]=101 (rising
edge) 2.86 2.93 2.99 V
PLS[2:0]=101 (falling
edge) 2.65 2.84 3.02 V
PLS[2:0]=110 (rising
edge) 2.96 3.03 3.10 V
PLS[2:0]=110 (falling
edge) 2.85 2.93 2.99 V
PLS[2:0]=111 (rising
edge) 3.07 3.14 3.21 V
PLS[2:0]=111 (falling
edge) 2.95 3.03 3.09 V
VPVDhyst(3) PVD hysteresis - 100 - mV
VPOR/PDR
Power-on/power-down
reset threshold
Falling edge 1.60(1) 1.68 1.76 V
Rising edge 1.64 1.72 1.80 V
VPDRhyst(3) PDR hysteresis - 40 - mV
Electrical characteristics STM32F415xx, STM32F417xx
78/182 Doc ID 022063 Rev 3
5.3.6 Supply current characteristics
The current consumption is a function of several parameters and factors such as the
operating voltage, ambient temperature, I/O pin loading, device software configuration,
operating frequencies, I/O pin switching rate, program location in memory and executed
binary code.
The current consumption is measured as described in Figure 20: Current consumption
measurement scheme.
All Run mode current consumption measurements given in this section are performed using
a CoreMark-compliant code.
VBOR1
Brownout level 1
threshold
Falling edge 2.13 2.19 2.24 V
Rising edge 2.23 2.29 2.33 V
VBOR2
Brownout level 2
threshold
Falling edge 2.44 2.50 2.56 V
Rising edge 2.53 2.59 2.63 V
VBOR3
Brownout level 3
threshold
Falling edge 2.75 2.83 2.88 V
Rising edge 2.85 2.92 2.97 V
V12
1.2 V domain
voltage(2)(3)
VOS bit in PWR_CR
register = 0 1.08 1.14 1.20 V
VOS bit in PWR_CR
register = 1 1.20 1.26 1.32 V
VBORhyst(3) BOR hysteresis - 100 - mV
TRSTTEMPO(3)(4) Reset temporization 0.5 1.5 3.0 ms
IRUSH(3)
InRush current on
voltage regulator
power-on (POR or
wakeup from Standby)
- 160 200 mA
ERUSH(3)
InRush energy on
voltage regulator
power-on (POR or
wakeup from Standby)
VDD = 1.8 V, TA = 105 °C,
IRUSH = 171 mA for 31 µs --5.4µC
1. The product behavior is guaranteed by design down to the minimum VPOR/PDR value.
2. The average expected gain in power consumption when VOS = 0 compared to VOS = 1 is around 10% for
the whole temperature range, when the system clock frequency is between 30 and 144 MHz.
3. Guaranteed by design, not tested in production.
4. The reset temporization is measured from the power-on (POR reset or wakeup from VBAT) to the instant
when first instruction is read by the user application code.
Table 18. Embedded reset and power control block characteristics (continued)
Symbol Parameter Conditions Min Typ Max Unit
STM32F415xx, STM32F417xx Electrical characteristics
Doc ID 022063 Rev 3 79/182
Typical and maximum current consumption
The MCU is placed under the following conditions:
●At startup, all I/O pins are configured as analog inputs by firmware.
●All peripherals are disabled except if it is explicitly mentioned.
●The Flash memory access time is adjusted to fHCLK frequency (0 wait state from 0 to
30 MHz, 1 wait state from 30 to 60 MHz, 2 wait states from 60 to 90 MHz, 3 wait states
from 90 to 120 MHz, 4 wait states from 120 to 150 MHz, and 5 wait states from 150 to
168 MHz).
●When the peripherals are enabled HCLK is the system clock, fPCLK1 = fHCLK/4, and
fPCLK2 = fHCLK/2, except is explicitly mentioned.
●The maximum values are obtained for VDD = 3.6 V and maximum ambient temperature
(TA), and the typical values for TA= 25 °C and VDD = 3.3 V unless otherwise specified.
Table 19. Typical and maximum current consumption in Run mode, code with data processing
running from Flash memory (ART accelerator disabled)
Symbol Parameter Conditions fHCLK
Typ Max(1)
Unit
TA = 25 °C TA = 85 °C TA = 105 °C
IDD
Supply current
in Run mode
External clock(2),
all peripherals
enabled(3)(4)
168 MHz 93 109 117
mA
144 MHz 76 89 96
120 MHz 67 79 86
90 MHz 53 65 73
60 MHz 37 49 56
30 MHz 20 32 39
25 MHz 16 27 35
16 MHz 11 23 30
8 MHz 6 18 25
4 MHz 4 16 23
2 MHz 3 15 22
External clock(2),
all peripherals
disabled(3)(4)
168 MHz 46 61 69
144 MHz 40 52 60
120 MHz 37 48 56
90 MHz 30 42 50
60 MHz 22 33 41
30 MHz 12 24 31
25 MHz 10 21 29
16 MHz 7 19 26
8 MHz 4 16 23
4 MHz 3 15 22
2 MHz 2 14 21
1. Based on characterization, tested in production at VDD max and fHCLK max with peripherals enabled.
2. External clock is 4 MHz and PLL is on when fHCLK > 25 MHz.
Electrical characteristics STM32F415xx, STM32F417xx
80/182 Doc ID 022063 Rev 3
3. When analog peripheral blocks such as (ADCs, DACs, HSE, LSE, HSI,LSI) are on, an additional power consumption
should be considered.
4. When the ADC is ON (ADON bit set in the ADC_CR2 register), add an additional power consumption of 1.6 mA per ADC
for the analog part.
Table 20. Typical and maximum current consumption in Run mode, code with data processing
running from Flash memory (ART accelerator enabled) or RAM (1)
Symbol Parameter Conditions fHCLK
Typ Max(2)
Unit
TA =
25 °C
TA =
85 °C
TA =
105 °C
IDD
Supply current in
Run mode
External clock(3), all
peripherals enabled(4)(5)
168 MHz 87 102 109
mA
144 MHz 67 80 86
120 MHz 56 69 75
90 MHz 44 56 62
60 MHz 30 42 49
30 MHz 16 28 35
25 MHz 12 24 31
16 MHz(6) 92028
8 MHz 5 17 24
4 MHz 3 15 22
2 MHz 2 14 21
External clock(3), all
peripherals disabled(4)(5)
168 MHz 40 54 61
144 MHz 31 43 50
120 MHz 26 38 45
90 MHz 20 32 39
60 MHz 14 26 33
30 MHz 8 20 27
25 MHz 6 18 25
16 MHz(6) 51624
8 MHz 3 15 22
4 MHz 2 14 21
2 MHz 2 14 21
1. Code and data processing running from SRAM1 using boot pins.
2. Based on characterization, tested in production at VDD max and fHCLK max with peripherals enabled.
3. External clock is 4 MHz and PLL is on when fHCLK > 25 MHz.
4. When the ADC is ON (ADON bit set in the ADC_CR2 register), add an additional power consumption of 1.6 mA per ADC for
the analog part.
5. When analog peripheral blocks such as ADCs, DACs, HSE, LSE, HSI, or LSI are ON, an additional power consumption
should be considered.
6. In this case HCLK = system clock/2.
STM32F415xx, STM32F417xx Electrical characteristics
Doc ID 022063 Rev 3 81/182
Figure 22. Typical current consumption vs temperature, Run mode, code with data
processing running from Flash (ART accelerator ON) or RAM, and peripherals OFF
Figure 23. Typical current consumption vs temperature, Run mode, code with data
processing running from Flash (ART accelerator ON) or RAM, and peripherals ON
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Figure 24. Typical current consumption vs temperature, Run mode, code with data
processing running from Flash (ART accelerator OFF) or RAM, and peripherals OFF
Figure 25. Typical current consumption vs temperature, Run mode, code with data
processing running from Flash (ART accelerator OFF) or RAM, and peripherals ON
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STM32F415xx, STM32F417xx Electrical characteristics
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Table 21. Typical and maximum current consumption in Sleep mode
Symbol Parameter Conditions fHCLK
Typ Max(1)
Unit
TA = 25 °C TA = 85 °C TA =
105 °C
IDD
Supply current in
Sleep mode
External clock(2),
all peripherals enabled(3)
168 MHz 59 77 84
mA
144 MHz 46 61 67
120 MHz 38 53 60
90 MHz 30 44 51
60 MHz 20 34 41
30 MHz 11 24 31
25 MHz 8 21 28
16 MHz 6 18 25
8 MHz 3 16 23
4 MHz 2 15 22
2 MHz 2 14 21
External clock(2), all
peripherals disabled
168 MHz 12 27 35
144 MHz 9 22 29
120 MHz 8 20 28
90 MHz 7 19 26
60 MHz 5 17 24
30 MHz 3 16 23
25 MHz 2 15 22
16 MHz 2 14 21
8 MHz 1 14 21
4 MHz 1 13 21
2 MHz 1 13 21
1. Based on characterization, tested in production at VDD max and fHCLK max with peripherals enabled.
2. External clock is 4 MHz and PLL is on when fHCLK > 25 MHz.
3. Add an additional power consumption of 1.6 mA per ADC for the analog part. In applications, this consumption occurs only
while the ADC is ON (ADON bit is set in the ADC_CR2 register).
Electrical characteristics STM32F415xx, STM32F417xx
84/182 Doc ID 022063 Rev 3
Table 22. Typical and maximum current consumptions in Stop mode
Symbol Parameter Conditions
Typ Max
Unit
TA =
25 °C
TA =
25 °C
TA =
85 °C
TA =
105 °C
IDD_STOP
Supply current
in Stop mode
with main
regulator in
Run mode
Flash in Stop mode, low-speed and high-speed
internal RC oscillators and high-speed
oscillator OFF (no independent watchdog)
0.60 2.10 11.00 20.00
mA
Flash in Deep power down mode, low-speed
and high-speed internal RC oscillators and
high-speed oscillator OFF (no independent
watchdog)
0.55 2.10 11.00 20.00
Supply current
in Stop mode
with main
regulator in
Low Power
mode
Flash in Stop mode, low-speed and high-speed
internal RC oscillators and high-speed
oscillator OFF (no independent watchdog)
0.40 1.30 8.00 15.00
Flash in Deep power down mode, low-speed
and high-speed internal RC oscillators and
high-speed oscillator OFF (no independent
watchdog)
0.35 1.30 8.00 15.00
Table 23. Typical and maximum current consumptions in Standby mode(1)
Symbol Parameter Conditions
Typ Max
Unit
TA = 25 °C TA = 85 °C TA = 105 °C
VDD =
1.8 V
VDD=
2.4 V
VDD =
3.3 V VDD = 3.6 V
IDD_STBY
Supply current
in Standby
mode
Backup SRAM ON, low-speed
oscillator and RTC ON 3.0 3.4 4.0 TBD(2) TBD(2)
µA
Backup SRAM OFF, low-
speed oscillator and RTC ON 2.4 2.7 3.3 TBD(2) TBD(2)
Backup SRAM ON, RTC OFF 2.4 2.6 3.0 12.5(2) 24.8(2)
Backup SRAM OFF, RTC OFF 1.7 1.9 2.2 9.8(2) 19.2(2)
1. TBD stands for “to be defined”.
2. Based on characterization, not tested in production.
STM32F415xx, STM32F417xx Electrical characteristics
Doc ID 022063 Rev 3 85/182
Figure 26. Typical VBAT current consumption (LSE and RTC ON/backup RAM OFF)
Table 24. Typical and maximum current consumptions in VBAT mode(1)
Symbol Parameter Conditions
Typ Max
Unit
TA = 25 °C TA = 85 °C TA =
105 °C
VBAT =
1.8 V
VBAT=
2.4 V
VBAT =
3.3 V VBAT = 3.6 V
IDD_VBAT
Backup
domain supply
current
Backup SRAM ON, low-speed
oscillator and RTC ON 1.29 1.42 1.68 TBD(2) TBD(2)
µA
Backup SRAM OFF, low-speed
oscillator and RTC ON 0.62 0.73 0.96 TBD(2) TBD(2)
Backup SRAM ON, RTC OFF 0.79 0.81 0.86 9(2) 16(2)
Backup SRAM OFF, RTC OFF 0.10 0.10 0.10 5(2) 7(2)
1. TBD stands for “to be defined”.
2. Based on characterization, not tested in production.
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0
0.5
1
1.5
2
2.5
3
3.5
0 102030405060708090100
IVBAT in (μA)
Te mp e r at ur e i n ( ° C )
1.65V
1.8V
2V
2.4V
2.7V
3V
3.3V
3.6V
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86/182 Doc ID 022063 Rev 3
Figure 27. Typical VBAT current consumption (LSE and RTC ON/backup RAM ON)
I/O system current consumption
The current consumption of the I/O system has two components: static and dynamic.
I/O static current consumption
All the I/Os used as inputs with pull-up generate current consumption when the pin is
externally held low. The value of this current consumption can be simply computed by using
the pull-up/pull-down resistors values given in Table 46: I/O static characteristics.
For the output pins, any external pull-down or external load must also be considered to
estimate the current consumption.
Additional I/O current consumption is due to I/Os configured as inputs if an intermediate
voltage level is externally applied. This current consumption is caused by the input Schmitt
trigger circuits used to discriminate the input value. Unless this specific configuration is
required by the application, this supply current consumption can be avoided by configuring
these I/Os in analog mode. This is notably the case of ADC input pins which should be
configured as analog inputs.
Caution: Any floating input pin can also settle to an intermediate voltage level or switch inadvertently,
as a result of external electromagnetic noise. To avoid current consumption related to
floating pins, they must either be configured in analog mode, or forced internally to a definite
digital value. This can be done either by using pull-up/down resistors or by configuring the
pins in output mode.
I/O dynamic current consumption
In addition to the internal peripheral current consumption measured previously (see
Table 26: Peripheral current consumption), the I/Os used by an application also contribute to
the current consumption. When an I/O pin switches, it uses the current from the MCU supply
-36
0
1
2
3
4
5
6
0 102030405060708090100
IVBAT in (μA)
Te mp e r at ur e i n ( ° C )
1.65V
1.8V
2V
2.4V
2.7V
3V
3.3V
3.6V
STM32F415xx, STM32F417xx Electrical characteristics
Doc ID 022063 Rev 3 87/182
voltage to supply the I/O pin circuitry and to charge/discharge the capacitive load (internal or
external) connected to the pin:
where
ISW is the current sunk by a switching I/O to charge/discharge the capacitive load
VDD is the MCU supply voltage
fSW is the I/O switching frequency
C is the total capacitance seen by the I/O pin: C = CINT+ CEXT
The test pin is configured in push-pull output mode and is toggled by software at a fixed
frequency.
ISW VDD fSW C××=
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88/182 Doc ID 022063 Rev 3
Table 25. Switching output I/O current consumption
Symbol Parameter Conditions(1) I/O toggling
frequency (fSW)Typ Unit
IDDIO
I/O switching
current
VDD = 3.3 V(2)
C = CINT
2 MHz 0.02
mA
8 MHz 0.14
25 MHz 0.51
50 MHz 0.86
60 MHz 1.30
VDD = 3.3 V
CEXT = 0 pF
C = CINT + CEXT+ CS
2 MHz 0.10
8 MHz 0.38
25 MHz 1.18
50 MHz 2.47
60 MHz 2.86
VDD = 3.3 V
CEXT = 10 pF
C = CINT + CEXT+ CS
2 MHz 0.17
8 MHz 0.66
25 MHz 1.70
50 MHz 2.65
60 MHz 3.48
VDD = 3.3 V
CEXT = 22 pF
C = CINT + CEXT+ CS
2 MHz 0.23
8 MHz 0.95
25 MHz 3.20
50 MHz 4.69
60 MHz 8.06
VDD = 3.3 V
CEXT = 33 pF
C = CINT + CEXT+ CS
2 MHz 0.30
8 MHz 1.22
25 MHz 3.90
50 MHz 8.82
60 MHz -(3)
1. CS is the PCB board capacitance including the pad pin. CS = 7 pF (estimated value).
2. This test is performed by cutting the LQFP package pin (pad removal).
3. At 60 MHz, C maximum load is specified 30 pF.
STM32F415xx, STM32F417xx Electrical characteristics
Doc ID 022063 Rev 3 89/182
On-chip peripheral current consumption
The current consumption of the on-chip peripherals is given in Ta bl e 2 6 . The MCU is placed
under the following conditions:
●At startup, all I/O pins are configured as analog pins by firmware.
●All peripherals are disabled unless otherwise mentioned
●The code is running from Flash memory and the Flash memory access time is equal to
5 wait states at 168 MHz.
●The code is running from Flash memory and the Flash memory access time is equal to
4 wait states at 144 MHz, and the power scale mode is set to 2.
●ART accelerator and Cache off.
●The given value is calculated by measuring the difference of current consumption
– with all peripherals clocked off
– with one peripheral clocked on (with only the clock applied)
●When the peripherals are enabled: HCLK is the system clock, fPCLK1 = fHCLK/4, and
fPCLK2 =f
HCLK/2.
●The typical values are obtained for VDD = 3.3 V and TA= 25 °C, unless otherwise
specified.
Table 26. Peripheral current consumption
Peripheral(1) 168 MHz 144 MHz Unit
AHB1
GPIO A 0.49 0.36
mA
GPIO B 0.45 0.33
GPIO C 0.45 0.34
GPIO D 0.45 0.34
GPIO E 0.47 0.35
GPIO F 0.45 0.33
GPIO G 0.44 0.33
GPIO H 0.45 0.34
GPIO I 0.44 0.33
OTG_HS + ULPI 4.57 3.55
CRC 0.07 0.06
BKPSRAM 0.11 0.08
DMA1 6.15 4.75
DMA2 6.24 4.8
ETH_MAC +
ETH_MAC_TX
ETH_MAC_RX
ETH_MAC_PTP
3.28 2.54
AHB2 OTG_FS 4.59 3.69 mA
DCMI 1.04 0.80
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90/182 Doc ID 022063 Rev 3
AHB2
RNG 0.29 0.23
mAHASH 1.71 1.31
CRYPTO 0.41 0.31
AHB3 FSMC 2.18 1.67
mA
APB1
TIM2 0.80 0.61
TIM3 0.58 0.44
TIM4 0.62 0.48
TIM5 0.79 0.61
TIM6 0.15 0.11
TIM7 0.16 0.12
TIM12 0.33 0.26
TIM13 0.27 0.21
TIM14 0.27 0.21
PWR 0.04 0.03
USART2 0.17 0.13
USART3 0.17 0.13
UART4 0.17 0.13
UART5 0.17 0.13
I2C1 0.17 0.13
I2C2 0.18 0.13
I2C3 0.18 0.13
SPI2/I2S2(2) 0.17/0.16 0.13/0.12
SPI3/I2S3(2) 0.16/0.14 0.12/0.12
CAN1 0.27 0.21
CAN2 0.26 0.20
DAC 0.14 0.10
DAC channel 1(3) 0.91 0.89
DAC channel 2(4) 0.91 0.89
DAC channel 1 and 2(3)(4) 1.69 1.68
WWDG 0.04 0.04
Table 26. Peripheral current consumption (continued)
Peripheral(1) 168 MHz 144 MHz Unit
STM32F415xx, STM32F417xx Electrical characteristics
Doc ID 022063 Rev 3 91/182
5.3.7 Wakeup time from low-power mode
The wakeup times given in Ta bl e 2 7 is measured on a wakeup phase with a 16 MHz HSI RC
oscillator. The clock source used to wake up the device depends from the current operating
mode:
●Stop or Standby mode: the clock source is the RC oscillator
●Sleep mode: the clock source is the clock that was set before entering Sleep mode.
All timings are derived from tests performed under ambient temperature and VDD supply
voltage conditions summarized in Ta b l e 1 3 .
APB2
SDIO 0.64 0.54
mA
TIM1 1.47 1.14
TIM8 1.58 1.22
TIM9 0.68 0.54
TIM10 0.45 0.36
TIM11 0.47 0.38
ADC1(5) 2.20 2.10
ADC2(5) 2.04 1.93
ADC3(5) 2.10 2.00
SPI1 0.14 0.12
USART1 0.34 0.27
USART6 0.34 0.28
1. HSE oscillator with 4 MHz crystal and PLL are ON.
2. I2SMOD bit set in SPI_I2SCFGR register, and then the I2SE bit set to enable I2S peripheral.
3. EN1 bit is set in DAC_CR register.
4. EN2 bit is set in DAC_CR register.
5. ADON bit set in ADC_CR2 register.
Table 26. Peripheral current consumption (continued)
Peripheral(1) 168 MHz 144 MHz Unit
Table 27. Low-power mode wakeup timings
Symbol Parameter Min(1) Typ(1) Max(1) Unit
tWUSLEEP(2) Wakeup from Sleep mode - 1 - µs
tWUSTOP(2)
Wakeup from Stop mode (regulator in Run mode) - 13 -
µs
Wakeup from Stop mode (regulator in low power mode) - 17 40
Wakeup from Stop mode (regulator in low power mode
and Flash memory in Deep power down mode) -110-
tWUSTDBY(2)(3) Wakeup from Standby mode 260 375 480 µs
1. Based on characterization, not tested in production.
2. The wakeup times are measured from the wakeup event to the point in which the application code reads the first instruction.
3. tWUSTDBY minimum and maximum values are given at 105 °C and –45 °C, respectively.
Electrical characteristics STM32F415xx, STM32F417xx
92/182 Doc ID 022063 Rev 3
5.3.8 External clock source characteristics
High-speed external user clock generated from an external source
The characteristics given in Tabl e 2 8 result from tests performed using an high-speed
external clock source, and under ambient temperature and supply voltage conditions
summarized in Ta b l e 1 3 .
Low-speed external user clock generated from an external source
The characteristics given in Tabl e 2 9 result from tests performed using an low-speed
external clock source, and under ambient temperature and supply voltage conditions
summarized in Ta b l e 1 3 .
Table 28. High-speed external user clock characteristics
Symbol Parameter Conditions Min Typ Max Unit
fHSE_ext
External user clock source
frequency(1) 1-50MHz
VHSEH OSC_IN input pin high level voltage 0.7VDD -V
DD V
VHSEL OSC_IN input pin low level voltage VSS -0.3V
DD
tw(HSE)
tw(HSE)
OSC_IN high or low time(1)
1. Guaranteed by design, not tested in production.
5--
ns
tr(HSE)
tf(HSE)
OSC_IN rise or fall time(1) --10
Cin(HSE) OSC_IN input capacitance(1) -5-pF
DuCy(HSE) Duty cycle 45 - 55 %
ILOSC_IN Input leakage current VSS ≤VIN ≤VDD --±1µA
Table 29. Low-speed external user clock characteristics
Symbol Parameter Conditions Min Typ Max Unit
fLSE_ext
User External clock source
frequency(1) - 32.768 1000 kHz
VLSEH OSC32_IN input pin high level voltage 0.7VDD -V
DD V
VLSEL OSC32_IN input pin low level voltage VSS -0.3V
DD
tw(LSE)
tf(LSE)
OSC32_IN high or low time(1) 450 - -
ns
tr(LSE)
tf(LSE)
OSC32_IN rise or fall time(1) --50
Cin(LSE) OSC32_IN input capacitance(1) -5-pF
DuCy(LSE) Duty cycle 30 - 70 %
ILOSC32_IN Input leakage current VSS ≤VIN ≤VDD --±1µA
1. Guaranteed by design, not tested in production.
STM32F415xx, STM32F417xx Electrical characteristics
Doc ID 022063 Rev 3 93/182
Figure 28. High-speed external clock source AC timing diagram
Figure 29. Low-speed external clock source AC timing diagram
High-speed external clock generated from a crystal/ceramic resonator
The high-speed external (HSE) clock can be supplied with a 4 to 26 MHz crystal/ceramic
resonator oscillator. All the information given in this paragraph are based on characterization
results obtained with typical external components specified in Ta b l e 3 0 . In the application,
the resonator and the load capacitors have to be placed as close as possible to the oscillator
pins in order to minimize output distortion and startup stabilization time. Refer to the crystal
resonator manufacturer for more details on the resonator characteristics (frequency,
package, accuracy).
ai17528
OSC_IN
External
STM32F
clock source
VHSEH
tf(HSE) tW(HSE)
IL
90%
10%
THSE
t
tr(HSE) tW(HSE)
fHSE_ext
VHSEL
ai17529
OSC32_IN
External
STM32F
clock source
VLSEH
tf(LSE) tW(LSE)
IL
90%
10%
TLSE
t
tr(LSE) tW(LSE)
fLSE_ext
VLSEL
Electrical characteristics STM32F415xx, STM32F417xx
94/182 Doc ID 022063 Rev 3
For CL1 and CL2, it is recommended to use high-quality external ceramic capacitors in the
5 pF to 25 pF range (typ.), designed for high-frequency applications, and selected to match
the requirements of the crystal or resonator (see Figure 30). CL1 and CL2 are usually the
same size. The crystal manufacturer typically specifies a load capacitance which is the
series combination of CL1 and CL2. PCB and MCU pin capacitance must be included (10 pF
can be used as a rough estimate of the combined pin and board capacitance) when sizing
CL1 and CL2.
Note: For information on electing the crystal, refer to the application note AN2867 “Oscillator
design guide for ST microcontrollers” available from the ST website www.st.com.
Figure 30. Typical application with an 8 MHz crystal
1. REXT value depends on the crystal characteristics.
Low-speed external clock generated from a crystal/ceramic resonator
The low-speed external (LSE) clock can be supplied with a 32.768 kHz crystal/ceramic
resonator oscillator. All the information given in this paragraph are based on characterization
results obtained with typical external components specified in Ta b l e 3 1 . In the application,
the resonator and the load capacitors have to be placed as close as possible to the oscillator
pins in order to minimize output distortion and startup stabilization time. Refer to the crystal
resonator manufacturer for more details on the resonator characteristics (frequency,
package, accuracy).
Table 30. HSE 4-26 MHz oscillator characteristics(1) (2)
1. Resonator characteristics given by the crystal/ceramic resonator manufacturer.
2. Based on characterization, not tested in production.
Symbol Parameter Conditions Min Typ Max Unit
fOSC_IN Oscillator frequency 4 - 26 MHz
RFFeedback resistor - 200 - kΩ
IDD HSE current consumption
VDD=3.3 V,
ESR= 30 Ω,
CL=5 pF@25 MHz
-449-
µA
VDD=3.3 V,
ESR= 30 Ω,
CL=10 pF@25 MHz
-532-
gmOscillator transconductance Startup 5 - - mA/V
tSU(HSE(3)
3. tSU(HSE) is the startup time measured from the moment it is enabled (by software) to a stabilized 8 MHz
oscillation is reached. This value is measured for a standard crystal resonator and it can vary significantly
with the crystal manufacturer
Startup time VDD is stabilized - 2 - ms
ai17530
OSC_OU T
OSC_IN fHSE
CL1
RF
STM32F
8 MHz
resonator
Resonator with
integrated capacitors
Bias
controlled
gain
REXT(1)
CL2
STM32F415xx, STM32F417xx Electrical characteristics
Doc ID 022063 Rev 3 95/182
Note: For CL1 and CL2 it is recommended to use high-quality external ceramic capacitors in the
5 pF to 15 pF range selected to match the requirements of the crystal or resonator (see
Figure 31). CL1 and CL2, are usually the same size. The crystal manufacturer typically
specifies a load capacitance which is the series combination of CL1 and CL2.
Load capacitance CL has the following formula: CL = CL1 x CL2 / (CL1 + CL2) + Cstray where
Cstray is the pin capacitance and board or trace PCB-related capacitance. Typically, it is
between 2 pF and 7 pF.
Note: For information on electing the crystal, refer to the application note AN2867 “Oscillator
design guide for ST microcontrollers” available from the ST website www.st.com.
Caution: To avoid exceeding the maximum value of CL1 and CL2 (15 pF) it is strongly recommended
to use a resonator with a load capacitance CL
≤
7 pF. Never use a resonator with a load
capacitance of 12.5 pF.
Example: if you choose a resonator with a load capacitance of CL = 6 pF, and Cstray = 2 pF,
then CL1 = CL2 = 8 pF.
Figure 31. Typical application with a 32.768 kHz crystal
Table 31. LSE oscillator characteristics (fLSE = 32.768 kHz) (1)
1. Guaranteed by design, not tested in production.
Symbol Parameter Conditions Min Typ Max Unit
RFFeedback resistor - 18.4 - MΩ
IDD LSE current consumption - - 1 µA
gmOscillator Transconductance 2.8 - - µA/V
tSU(LSE)(2)
2. tSU(LSE) is the startup time measured from the moment it is enabled (by software) to a stabilized
32.768 kHz oscillation is reached. This value is measured for a standard crystal resonator and it can vary
significantly with the crystal manufacturer
startup time VDD is stabilized - 2 - s
ai17531
OSC32_OU T
OSC32_IN fLSE
CL1
RF
STM32F
32.768 kHz
resonator
Resonator with
integrated capacitors
Bias
controlled
gain
CL2
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96/182 Doc ID 022063 Rev 3
5.3.9 Internal clock source characteristics
The parameters given in Ta b l e 3 2 and Ta b l e 3 3 are derived from tests performed under
ambient temperature and VDD supply voltage conditions summarized in Ta bl e 1 3 .
High-speed internal (HSI) RC oscillator
Low-speed internal (LSI) RC oscillator
Table 32. HSI oscillator characteristics (1)
1. VDD = 3.3 V, TA = –40 to 105 °C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
fHSI Frequency - 16 - MHz
ACCHSI
Accuracy of the HSI
oscillator
User-trimmed with the RCC_CR
register(2)
2. Refer to application note AN2868 “STM32F10xxx internal RC oscillator (HSI) calibration” available from the
ST website www.st.com.
--1%
Factory-
calibrated
TA = –40 to 105 °C –8 - 4.5 %
TA = –10 to 85 °C –4 - 4 %
TA = 25 °C –1 - 1 %
tsu(HSI)(3)
3. Guaranteed by design, not tested in production.
HSI oscillator
startup time -2.24µs
IDD(HSI)
HSI oscillator
power consumption -6080µA
Table 33. LSI oscillator characteristics (1)
1. VDD = 3 V, TA = –40 to 105 °C unless otherwise specified.
Symbol Parameter Min Typ Max Unit
fLSI(2)
2. Based on characterization, not tested in production.
Frequency 17 32 47 kHz
tsu(LSI)(3)
3. Guaranteed by design, not tested in production.
LSI oscillator startup time - 15 40 µs
IDD(LSI)(3) LSI oscillator power consumption - 0.4 0.6 µA
STM32F415xx, STM32F417xx Electrical characteristics
Doc ID 022063 Rev 3 97/182
Figure 32. ACCLSI versus temperature
5.3.10 PLL characteristics
The parameters given in Ta b l e 3 4 and Ta b l e 3 5 are derived from tests performed under
temperature and VDD supply voltage conditions summarized in Ta bl e 1 3 .
-36
.ORMALIZEDDEVIATI ON
4E M P E R AT U R E #
MAX
AVG
MIN
Table 34. Main PLL characteristics
Symbol Parameter Conditions Min Typ Max Unit
fPLL_IN PLL input clock(1) 0.95(2) 12.10MHz
fPLL_OUT PLL multiplier output clock 24 - 168 MHz
fPLL48_OUT
48 MHz PLL multiplier output
clock -4875MHz
fVCO_OUT PLL VCO output 192 - 432 MHz
tLOCK PLL lock time VCO freq = 192 MHz 75 - 200 µs
VCO freq = 432 MHz 100 - 300
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Jitter(3)
Cycle-to-cycle jitter
System clock
120 MHz
RMS - 25 -
ps
peak
to
peak
-±150 -
Period Jitter
RMS - 15 -
peak
to
peak
-±200 -
Main clock output (MCO) for
RMII Ethernet
Cycle to cycle at 50 MHz
on 1000 samples -32 -
Main clock output (MCO) for MII
Ethernet
Cycle to cycle at 25 MHz
on 1000 samples -40 -
Bit Time CAN jitter Cycle to cycle at 1 MHz
on 1000 samples -330 -
IDD(PLL)(4) PLL power consumption on VDD VCO freq = 192 MHz
VCO freq = 432 MHz
0.15
0.45 -0.40
0.75 mA
IDDA(PLL)(4) PLL power consumption on
VDDA
VCO freq = 192 MHz
VCO freq = 432 MHz
0.30
0.55 -0.40
0.85 mA
1. Take care of using the appropriate division factor M to obtain the specified PLL input clock values. The M factor is shared
between PLL and PLLI2S.
2. Guaranteed by design, not tested in production.
3. The use of 2 PLLs in parallel could degraded the Jitter up to +30%.
4. Based on characterization, not tested in production.
Table 34. Main PLL characteristics (continued)
Symbol Parameter Conditions Min Typ Max Unit
Table 35. PLLI2S (audio PLL) characteristics(1)
Symbol Parameter Conditions Min Typ Max Unit
fPLLI2S_IN PLLI2S input clock(2) 0.95(3) 12.10MHz
fPLLI2S_OUT PLLI2S multiplier output clock - - 216 MHz
fVCO_OUT PLLI2S VCO output 192 - 432 MHz
tLOCK PLLI2S lock time VCO freq = 192 MHz 75 - 200 µs
VCO freq = 432 MHz 100 - 300
Jitter(4)
Master I2S clock jitter
Cycle to cycle at
12,343 MHz on
48KHz period,
N=432, P=4, R=5
RMS - 90 -
peak
to
peak
- ±280 - ps
Average frequency of
12,343 MHz
N = 432, P = 4, R = 5
on 256 samples
TBD - TBD ps
WS I2S clock jitter Cycle to cycle at 48 KHz
on 1000 samples - 400 - ps
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IDD(PLLI2S)(5) PLLI2S power consumption on
VDD
VCO freq = 192 MHz
VCO freq = 432 MHz
0.15
0.45 -0.40
0.75 mA
IDDA(PLLI2S)(5) PLLI2S power consumption on
VDDA
VCO freq = 192 MHz
VCO freq = 432 MHz
0.30
0.55 -0.40
0.85 mA
1. TBD stands for “to be defined”.
2. Take care of using the appropriate division factor M to have the specified PLL input clock values.
3. Guaranteed by design, not tested in production.
4. Value given with main PLL running.
5. Based on characterization, not tested in production.
Table 35. PLLI2S (audio PLL) characteristics(1) (continued)
Symbol Parameter Conditions Min Typ Max Unit
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5.3.11 PLL spread spectrum clock generation (SSCG) characteristics
The spread spectrum clock generation (SSCG) feature allows to reduce electromagnetic
interferences (see Table 42: EMI characteristics). It is available only on the main PLL.
Equation 1
The frequency modulation period (MODEPER) is given by the equation below:
fPLL_IN and fMod must be expressed in Hz.
As an example:
If fPLL_IN = 1 MHz, and fMOD = 1 kHz, the modulation depth (MODEPER) is given by
equation 1:
Equation 2
Equation 2 allows to calculate the increment step (INCSTEP):
fVCO_OUT must be expressed in MHz.
With a modulation depth (md) = ±2 % (4 % peak to peak), and PLLN = 240 (in MHz):
An amplitude quantization error may be generated because the linear modulation profile is
obtained by taking the quantized values (rounded to the nearest integer) of MODPER and
INCSTEP. As a result, the achieved modulation depth is quantized. The percentage
quantized modulation depth is given by the following formula:
As a result:
Table 36. SSCG parameters constraint
Symbol Parameter Min Typ Max(1) Unit
fMod Modulation frequency - - 10 KHz
md Peak modulation depth 0.25 - 2 %
MODEPER * INCSTEP - - 215−1-
1. Guaranteed by design, not tested in production.
MODEPER round fPLL_IN 4f
Mod
×()⁄[]=
MODEPER round 106410
3
×()⁄[]250==
INCSTEP round 215 1–()md PLLN××()100 5×MODEPER×()⁄[]=
INCSTEP round 215 1–()2 240××()100 5×250×()⁄[]126md(quantitazed)%==
mdquantized% MODEPER INCSTEP×100×5×()215 1–()PLLN×()⁄=
mdquantized%250126×100×5×()215 1–()240×()⁄2.002%(peak)==
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Figure 33 and Figure 34 show the main PLL output clock waveforms in center spread and
down spread modes, where:
F0 is fPLL_OUT nominal.
Tmode is the modulation period.
md is the modulation depth.
Figure 33. PLL output clock waveforms in center spread mode
Figure 34. PLL output clock waveforms in down spread mode
5.3.12 Memory characteristics
Flash memory
The characteristics are given at TA = –40 to 105 °C unless otherwise specified.
The devices are shipped to customers with the Flash memory erased.
&REQUENCY0,,?/54
4IME
&
TMODE TMODE
MD
AI
MD
&REQUENCY0,,?/54
4IME
&
TMODE TMODE
MD
AI
Table 37. Flash memory characteristics
Symbol Parameter Conditions Min Typ Max Unit
IDD Supply current
Write / Erase 8-bit mode, VDD = 1.8 V - 5 -
mAWrite / Erase 16-bit mode, VDD = 2.1 V - 8 -
Write / Erase 32-bit mode, VDD = 3.3 V - 12 -
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Table 38. Flash memory programming
Symbol Parameter Conditions Min(1) Typ Max(1)
1. Based on characterization, not tested in production.
Unit
tprog Word programming time Program/erase parallelism
(PSIZE) = x 8/16/32 -16100
(2)
2. The maximum programming time is measured after 100K erase operations.
µs
tERASE16KB Sector (16 KB) erase time
Program/erase parallelism
(PSIZE) = x 8 - 400 800
ms
Program/erase parallelism
(PSIZE) = x 16 - 300 600
Program/erase parallelism
(PSIZE) = x 32 - 250 500
tERASE64KB Sector (64 KB) erase time
Program/erase parallelism
(PSIZE) = x 8 - 1200 2400
ms
Program/erase parallelism
(PSIZE) = x 16 - 700 1400
Program/erase parallelism
(PSIZE) = x 32 - 550 1100
tERASE128KB Sector (128 KB) erase time
Program/erase parallelism
(PSIZE) = x 8 -24
s
Program/erase parallelism
(PSIZE) = x 16 -1.32.6
Program/erase parallelism
(PSIZE) = x 32 -12
tME Mass erase time
Program/erase parallelism
(PSIZE) = x 8 -1632
s
Program/erase parallelism
(PSIZE) = x 16 -1122
Program/erase parallelism
(PSIZE) = x 32 -816
Vprog Programming voltage
32-bit program operation 2.7 - 3.6 V
16-bit program operation 2.1 - 3.6 V
8-bit program operation 1.8 - 3.6 V
Table 39. Flash memory programming with VPP
Symbol Parameter Conditions Min(1) Typ Max(1) Unit
tprog Double word programming
TA = 0 to +40 °C
VDD = 3.3 V
VPP = 8.5 V
- 16 100(2) µs
tERASE16KB Sector (16 KB) erase time - 230 -
mstERASE64KB Sector (64 KB) erase time - 490 -
tERASE128KB Sector (128 KB) erase time - 875 -
tME Mass erase time - 6.9 - s
Vprog Programming voltage 2.7 - 3.6 V
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Table 40. Flash memory endurance and data retention
5.3.13 EMC characteristics
Susceptibility tests are performed on a sample basis during device characterization.
Functional EMS (electromagnetic susceptibility)
While a simple application is executed on the device (toggling 2 LEDs through I/O ports). the
device is stressed by two electromagnetic events until a failure occurs. The failure is
indicated by the LEDs:
●Electrostatic discharge (ESD) (positive and negative) is applied to all device pins until
a functional disturbance occurs. This test is compliant with the IEC 61000-4-2 standard.
●FTB: A burst of fast transient voltage (positive and negative) is applied to VDD and VSS
through a 100 pF capacitor, until a functional disturbance occurs. This test is compliant
with the IEC 61000-4-4 standard.
A device reset allows normal operations to be resumed.
The test results are given in Ta b l e 4 1 . They are based on the EMS levels and classes
defined in application note AN1709.
VPP VPP voltage range 7 - 9 V
IPP
Minimum current sunk on
the VPP pin 10 - - mA
tVPP(3) Cumulative time during
which VPP is applied - - 1 hour
1. Guaranteed by design, not tested in production.
2. The maximum programming time is measured after 100K erase operations.
3. VPP should only be connected during programming/erasing.
Symbol Parameter Conditions
Value
Unit
Min(1)
1. Based on characterization, not tested in production.
NEND Endurance TA = –40 to +85 °C (6 suffix versions)
TA = –40 to +105 °C (7 suffix versions) 10 kcycles
tRET Data retention
1 kcycle(2) at TA = 85 °C
2. Cycling performed over the whole temperature range.
30
Years1 kcycle(2) at TA = 105 °C 10
10 kcycles(2) at TA = 55 °C 20
Table 39. Flash memory programming with VPP (continued)
Symbol Parameter Conditions Min(1) Typ Max(1) Unit
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Designing hardened software to avoid noise problems
EMC characterization and optimization are performed at component level with a typical
application environment and simplified MCU software. It should be noted that good EMC
performance is highly dependent on the user application and the software in particular.
Therefore it is recommended that the user applies EMC software optimization and
prequalification tests in relation with the EMC level requested for his application.
Software recommendations
The software flowchart must include the management of runaway conditions such as:
●Corrupted program counter
●Unexpected reset
●Critical Data corruption (control registers...)
Prequalification trials
Most of the common failures (unexpected reset and program counter corruption) can be
reproduced by manually forcing a low state on the NRST pin or the Oscillator pins for 1
second.
To complete these trials, ESD stress can be applied directly on the device, over the range of
specification values. When unexpected behavior is detected, the software can be hardened
to prevent unrecoverable errors occurring (see application note AN1015).
Table 41. EMS characteristics
Symbol Parameter Conditions Level/
Class
VFESD
Voltage limits to be applied on any I/O pin to
induce a functional disturbance
VDD = 3.3 V, LQFP176, TA = +25 °C,
fHCLK = 168 MHz, conforms to
IEC 61000-4-2
2B
VEFTB
Fast transient voltage burst limits to be
applied through 100 pF on VDD and VSS
pins to induce a functional disturbance
VDD = 3.3 V, LQFP176, TA = +25 °C,
fHCLK = 168 MHz, conforms to
IEC 61000-4-2
4A
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Electromagnetic Interference (EMI)
The electromagnetic field emitted by the device are monitored while a simple application,
executing EEMBC? code, is running. This emission test is compliant with SAE IEC61967-2
standard which specifies the test board and the pin loading.
5.3.14 Absolute maximum ratings (electrical sensitivity)
Based on three different tests (ESD, LU) using specific measurement methods, the device is
stressed in order to determine its performance in terms of electrical sensitivity.
Electrostatic discharge (ESD)
Electrostatic discharges (a positive then a negative pulse separated by 1 second) are
applied to the pins of each sample according to each pin combination. The sample size
depends on the number of supply pins in the device (3 parts × (n+1) supply pins). This test
conforms to the JESD22-A114/C101 standard.
Table 42. EMI characteristics
Symbol Parameter Conditions Monitored
frequency band
Max vs.
[fHSE/fCPU]Unit
25/168 MHz
SEMI Peak level
VDD = 3.3 V, TA = 25 °C, LQFP176
package, conforming to SAE J1752/3
EEMBC, code running from Flash with
ART accelerator enabled
0.1 to 30 MHz 32
dBµV30 to 130 MHz 25
130 MHz to 1GHz 29
SAE EMI Level 4 -
VDD = 3.3 V, TA = 25 °C, LQFP176
package, conforming to SAE J1752/3
EEMBC, code running from Flash with
ART accelerator and clock dithering
enabled
0.1 to 30 MHz 19
dBµV30 to 130 MHz 16
130 MHz to 1GHz 18
SAE EMI level 3.5 -
Table 43. ESD absolute maximum ratings
Symbol Ratings Conditions Class Maximum
value(1) Unit
VESD(HBM)
Electrostatic discharge
voltage (human body
model)
TA = +25 °C conforming to JESD22-A114 2 2000(2)
V
VESD(CDM)
Electrostatic discharge
voltage (charge device
model)
TA = +25 °C conforming to JESD22-C101 II 500
1. Based on characterization results, not tested in production.
2. On VBAT pin, VESD(HBM) is limited to 1000 V.
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Static latchup
Two complementary static tests are required on six parts to assess the latchup
performance:
●A supply overvoltage is applied to each power supply pin
●A current injection is applied to each input, output and configurable I/O pin
These tests are compliant with EIA/JESD 78A IC latchup standard.
5.3.15 I/O current injection characteristics
As a general rule, current injection to the I/O pins, due to external voltage below VSS or
above VDD (for standard, 3 V-capable I/O pins) should be avoided during normal product
operation. However, in order to give an indication of the robustness of the microcontroller in
cases when abnormal injection accidentally happens, susceptibility tests are performed on a
sample basis during device characterization.
Functional susceptibilty to I/O current injection
While a simple application is executed on the device, the device is stressed by injecting
current into the I/O pins programmed in floating input mode. While current is injected into the
I/O pin, one at a time, the device is checked for functional failures.
The failure is indicated by an out of range parameter: ADC error above a certain limit (>5
LSB TUE), out of spec current injection on adjacent pins or other functional failure (for
example reset, oscillator frequency deviation).
The test results are given in Ta b l e 4 5 .
Table 44. Electrical sensitivities
Symbol Parameter Conditions Class
LU Static latch-up class TA = +105 °C conforming to JESD78A II level A
Table 45. I/O current injection susceptibility
Symbol Description
Functional susceptibility
Unit
Negative
injection
Positive
injection
IINJ
Injected current on all FT pins –5 +0 mA
Injected current on any other pin –5 +5
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5.3.16 I/O port characteristics
General input/output characteristics
Unless otherwise specified, the parameters given in Ta bl e 4 6 are derived from tests
performed under the conditions summarized in Ta b l e 1 3 . All I/Os are CMOS and TTL
compliant.
Table 46. I/O static characteristics
Symbol Parameter Conditions Min Typ Max Unit
VIL Input low level voltage
TTL ports
2.7 V ≤VDD ≤ 3.6 V
VSS–0.3 - 0.8
V
VIH(1) TTa/TC(2) I/O input high level voltage 2.0 - VDD+0.3
FT(3) I/O input high level voltage 2.0 - 5.5
VIL Input low level voltage
CMOS ports
1.8 V ≤VDD ≤ 3.6 V
VSS–0.3 - 0.3VDD
VIH(1)
TTa/TC I/O input high level voltage
0.7VDD
-3.6
(4)
FT I/O input high level voltage
-5.2
(4)
CMOS ports
2.0 V ≤VDD ≤ 3.6 V
-5.5
(4)
Vhys
I/O Schmitt trigger voltage hysteresis(5) -200-
mV
IO FT Schmitt trigger voltage
hysteresis(5) 5% VDD(4) - -
Ilkg
I/O input leakage current (6) VSS ≤VIN ≤ VDD --±1µA
I/O FT input leakage current (6) VIN = 5V - - 3
RPU
Weak pull-up equivalent
resistor(7)
All pins
except for
PA10 and
PB12 VIN = VSS
30 40 50
kΩ
PA10 and
PB12 81115
RPD
Weak pull-down
equivalent resistor
All pins
except for
PA10 and
PB12 VIN = VDD
30 40 50
PA10 and
PB12 81115
CIO(8) I/O pin capacitance 5 pF
1. If VIH maximum value cannot be respected, the injection current must be limited externally to IINJ(PIN) maximum value.
2. TTa = 3.3 V tolerant I/O directly connected to ADC; TC = standard 3.3 V I/O.
3. FT = 5 V tolerant.
4. With a minimum of 100 mV.
5. Hysteresis voltage between Schmitt trigger switching levels. Based on characterization, not tested in production.
6. Leakage could be higher than the maximum value, if negative current is injected on adjacent pins.
7. Pull-up and pull-down resistors are designed with a true resistance in series with a switchable PMOS/NMOS. This
MOS/NMOS contribution to the series resistance is minimum (~10% order).
8. Guaranteed by design, not tested in production.
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All I/Os are CMOS and TTL compliant (no software configuration required). Their
characteristics cover more than the strict CMOS-technology or TTL parameters.
Output driving current
The GPIOs (general purpose input/outputs) can sink or source up to ±8 mA, and sink or
source up to ±20 mA (with a relaxed VOL/VOH) except PC13, PC14 and PC15 which can
sink or source up to ±3mA. When using the PC13 to PC15 GPIOs in output mode, the
speed should not exceed 2 MHz with a maximum load of 30 pF.
In the user application, the number of I/O pins which can drive current must be limited to
respect the absolute maximum rating specified in Section 5.2. In particular:
●The sum of the currents sourced by all the I/Os on VDD, plus the maximum Run
consumption of the MCU sourced on VDD, cannot exceed the absolute maximum rating
IVDD (see Ta b le 1 1 ).
●The sum of the currents sunk by all the I/Os on VSS plus the maximum Run
consumption of the MCU sunk on VSS cannot exceed the absolute maximum rating
IVSS (see Ta bl e 1 1 ).
Output voltage levels
Unless otherwise specified, the parameters given in Ta bl e 4 7 are derived from tests
performed under ambient temperature and VDD supply voltage conditions summarized in
Ta bl e 1 3 . All I/Os are CMOS and TTL compliant.
Table 47. Output voltage characteristics(1)
1. PC13, PC14, PC15 and PI8 are supplied through the power switch. Since the switch only sinks a limited
amount of current (3 mA), the use of GPIOs PC13 to PC15 and PI8 in output mode is limited: the speed
should not exceed 2 MHz with a maximum load of 30 pF and these I/Os must not be used as a current
source (e.g. to drive an LED).
Symbol Parameter Conditions Min Max Unit
VOL(2)
2. The IIO current sunk by the device must always respect the absolute maximum rating specified in Table 11
and the sum of IIO (I/O ports and control pins) must not exceed IVSS.
Output low level voltage for an I/O pin
when 8 pins are sunk at same time TTL port
IIO = +8 mA
2.7 V < VDD < 3.6 V
-0.4
V
VOH(3)
3. The IIO current sourced by the device must always respect the absolute maximum rating specified in
Table 11 and the sum of IIO (I/O ports and control pins) must not exceed IVDD.
Output high level voltage for an I/O pin
when 8 pins are sourced at same time VDD–0.4 -
VOL (2) Output low level voltage for an I/O pin
when 8 pins are sunk at same time CMOS port
IIO =+ 8mA
2.7 V < VDD < 3.6 V
-0.4
V
VOH (3) Output high level voltage for an I/O pin
when 8 pins are sourced at same time 2.4 -
VOL(2)(4) Output low level voltage for an I/O pin
when 8 pins are sunk at same time IIO = +20 mA
2.7 V < VDD < 3.6 V
-1.3
V
VOH(3)(4) Output high level voltage for an I/O pin
when 8 pins are sourced at same time VDD–1.3 -
VOL(2)(4) Output low level voltage for an I/O pin
when 8 pins are sunk at same time IIO = +6 mA
2 V < VDD < 2.7 V
-0.4
V
VOH(3)(4) Output high level voltage for an I/O pin
when 8 pins are sourced at same time VDD–0.4 -
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Input/output AC characteristics
The definition and values of input/output AC characteristics are given in Figure 35 and
Ta bl e 4 8 , respectively.
Unless otherwise specified, the parameters given in Ta bl e 4 8 are derived from tests
performed under the ambient temperature and VDD supply voltage conditions summarized
in Ta b l e 1 3 .
4. Based on characterization data, not tested in production.
Table 48. I/O AC characteristics(1)(2)(3)
OSPEEDRy
[1:0] bit
value(1)
Symbol Parameter Conditions Min Typ Max Unit
00
fmax(IO)out Maximum frequency(4)
CL = 50 pF, VDD > 2.70 V - - 2
MHz
CL = 50 pF, VDD > 1.8 V - - 2
CL = 10 pF, VDD > 2.70 V - - TBD
CL = 10 pF, VDD > 1.8 V - - TBD
tf(IO)out
Output high to low level fall
time CL = 50 pF, VDD = 1.8 V to
3.6 V
--TBD
ns
tr(IO)out
Output low to high level rise
time --TBD
01
fmax(IO)out Maximum frequency(4)
CL = 50 pF, VDD > 2.70 V - - 25
MHz
CL = 50 pF, VDD > 1.8 V - - 12.5(5)
CL = 10 pF, VDD > 2.70 V - - 50(5)
CL = 10 pF, VDD > 1.8 V - - TBD
tf(IO)out
Output high to low level fall
time
CL = 50 pF, VDD < 2.7 V - - TBD
ns
CL = 10 pF, VDD > 2.7 V - - TBD
tr(IO)out
Output low to high level rise
time
CL = 50 pF, VDD < 2.7 V - - TBD
CL = 10 pF, VDD > 2.7 V - - TBD
10
fmax(IO)out Maximum frequency(4)
CL = 40 pF, VDD > 2.70 V - - 50(5)
MHz
CL = 40 pF, VDD > 1.8 V - - 25
CL = 10 pF, VDD > 2.70 V - - 100(5)
CL = 10 pF, VDD > 1.8 V - - TBD
tf(IO)out
Output high to low level fall
time
CL = 50 pF, 2.4 < VDD < 2.7 V - - TBD
nsCL = 10 pF, VDD > 2.7 V - - TBD
tr(IO)out
Output low to high level rise
time
CL = 50 pF, 2.4 < VDD < 2.7 V - - TBD
CL = 10 pF, VDD > 2.7 V - - TBD
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Figure 35. I/O AC characteristics definition
11
Fmax(IO)out Maximum frequency(4)
CL = 30 pF, VDD > 2.70 V - - 100(5)
MHz
CL = 30 pF, VDD > 1.8 V - - 50(5)
CL = 10 pF, VDD > 2.70 V - - 200(5)
CL = 10 pF, VDD > 1.8 V - - TBD
tf(IO)out
Output high to low level fall
time
CL = 20 pF, 2.4 < VDD < 2.7 V - - TBD
ns
CL = 10 pF, VDD > 2.7 V - - TBD
tr(IO)out
Output low to high level rise
time
CL = 20 pF, 2.4 < VDD < 2.7 V - - TBD
CL = 10 pF, VDD > 2.7 V - - TBD
-t
EXTIpw
Pulse width of external signals
detected by the EXTI
controller
10 - - ns
1. Based on characterization data, not tested in production.
2. The I/O speed is configured using the OSPEEDRy[1:0] bits. Refer to the STM32F20/21xxx reference manual for a
description of the GPIOx_SPEEDR GPIO port output speed register.
3. TBD stands for “to be defined”.
4. The maximum frequency is defined in Figure 35.
5. For maximum frequencies above 50 MHz, the compensation cell should be used.
Table 48. I/O AC characteristics(1)(2)(3) (continued)
OSPEEDRy
[1:0] bit
value(1)
Symbol Parameter Conditions Min Typ Max Unit
ai14131
10%
90%
50%
tr(IO)out
OUTPUT
EXT ERNAL
ON 50pF
Maximum frequency is achieved if (tr + tf) ≤ 2/3)T and if the duty cycle is (45-55%)
10 %
50%
90%
when loaded by 50pF
T
tr(IO)out
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5.3.17 NRST pin characteristics
The NRST pin input driver uses CMOS technology. It is connected to a permanent pull-up
resistor, RPU (see Ta b l e 4 6 ).
Unless otherwise specified, the parameters given in Ta bl e 4 9 are derived from tests
performed under the ambient temperature and VDD supply voltage conditions summarized
in Ta b l e 1 3 .
Figure 36. Recommended NRST pin protection
1. The reset network protects the device against parasitic resets.
2. The user must ensure that the level on the NRST pin can go below the VIL(NRST) max level specified in
Table 49. Otherwise the reset is not taken into account by the device.
Table 49. NRST pin characteristics
Symbol Parameter Conditions Min Typ Max Unit
VIL(NRST)(1)
1. Guaranteed by design, not tested in production.
NRST Input low level voltage –0.5 - 0.8 V
VIH(NRST)(1) NRST Input high level voltage 2 - VDD+0.5
Vhys(NRST)
NRST Schmitt trigger voltage
hysteresis - 200 - mV
RPU Weak pull-up equivalent resistor(2)
2. The pull-up is designed with a true resistance in series with a switchable PMOS. This PMOS contribution
to the series resistance must be minimum (~10% order).
VIN = VSS 30 40 50 kΩ
VF(NRST)(1) NRST Input filtered pulse - - 100 ns
VNF(NRST)(1) NRST Input not filtered pulse VDD > 2.7 V 300 - - ns
TNRST_OUT Generated reset pulse duration Internal
Reset source 20 - - µs
AIC
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205
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&ILTER
)NTERNAL2ESET
&
%XTERNAL
RESETCIRCUIT
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5.3.18 TIM timer characteristics
The parameters given in Ta b l e 5 0 and Ta b l e 5 1 are guaranteed by design.
Refer to Section 5.3.16: I/O port characteristics for details on the input/output alternate
function characteristics (output compare, input capture, external clock, PWM output).
Table 50. Characteristics of TIMx connected to the APB1 domain(1)
1. TIMx is used as a general term to refer to the TIM2, TIM3, TIM4, TIM5, TIM6, TIM7, and TIM12 timers.
Symbol Parameter Conditions Min Max Unit
tres(TIM) Timer resolution time
AHB/APB1
prescaler distinct
from 1, fTIMxCLK =
84 MHz
1-
tTIMxCLK
11.9 - ns
AHB/APB1
prescaler = 1,
fTIMxCLK = 42 MHz
1-
tTIMxCLK
23.8 - ns
fEXT Timer external clock
frequency on CH1 to CH4
fTIMxCLK = 84 MHz
APB1= 42 MHz
0fTIMxCLK/2 MHz
042MHz
ResTIM Timer resolution - 16/32 bit
tCOUNTER
16-bit counter clock period
when internal clock is
selected
1 65536 tTIMxCLK
0.0119 780 µs
32-bit counter clock period
when internal clock is
selected
1-
tTIMxCLK
0.0119 51130563 µs
tMAX_COUNT Maximum possible count - 65536 × 65536 tTIMxCLK
-51.1 s
STM32F415xx, STM32F417xx Electrical characteristics
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5.3.19 Communications interfaces
I2C interface characteristics
Unless otherwise specified, the parameters given in Ta bl e 5 2 are derived from tests
performed under the ambient temperature, fPCLK1 frequency and VDD supply voltage
conditions summarized in Ta b l e 1 3 .
The STM32F415xx and STM32F417xx I2C interface meets the requirements of the
standard I2C communication protocol with the following restrictions: the I/O pins SDA and
SCL are mapped to are not “true” open-drain. When configured as open-drain, the PMOS
connected between the I/O pin and VDD is disabled, but is still present.
The I2C characteristics are described in Ta b l e 5 2 . Refer also to Section 5.3.16: I/O port
characteristics for more details on the input/output alternate function characteristics (SDA
and SCL).
Table 51. Characteristics of TIMx connected to the APB2 domain(1)
1. TIMx is used as a general term to refer to the TIM1, TIM8, TIM9, TIM10, and TIM11 timers.
Symbol Parameter Conditions Min Max Unit
tres(TIM) Timer resolution time
AHB/APB2
prescaler distinct
from 1, fTIMxCLK =
168 MHz
1-
tTIMxCLK
5.95 - ns
AHB/APB2
prescaler = 1,
fTIMxCLK = 84 MHz
1-
tTIMxCLK
11.9 - ns
fEXT Timer external clock
frequency on CH1 to CH4
fTIMxCLK = 168 MHz
APB2 = 84 MHz
0fTIMxCLK/2 MHz
084MHz
ResTIM Timer resolution - 16 bit
tCOUNTER
16-bit counter clock
period when internal clock
is selected
1 65536 tTIMxCLK
tMAX_COUNT Maximum possible count - 32768 tTIMxCLK
Electrical characteristics STM32F415xx, STM32F417xx
114/182 Doc ID 022063 Rev 3
Table 52. I2C characteristics
Symbol Parameter
Standard mode I2C(1)
1. Guaranteed by design, not tested in production.
Fast mode I2C(1)(2)
2. fPCLK1 must be at least 2 MHz to achieve standard mode I2C frequencies. It must be at least 4 MHz to
achieve fast mode I2C frequencies, and a multiple of 10 MHz to reach the 400 kHz maximum I2C fast mode
clock.
Unit
Min Max Min Max
tw(SCLL) SCL clock low time 4.7 - 1.3 - µs
tw(SCLH) SCL clock high time 4.0 - 0.6 -
tsu(SDA) SDA setup time 250 - 100 -
ns
th(SDA) SDA data hold time 0 - 0 900(3)
3. The maximum data hold time has only to be met if the interface does not stretch the low period of SCL
signal.
tr(SDA)
tr(SCL)
SDA and SCL rise time - 1000 20 + 0.1Cb300
tf(SDA)
tf(SCL)
SDA and SCL fall time - 300 - 300
th(STA) Start condition hold time 4.0 - 0.6 -
µs
tsu(STA)
Repeated Start condition
setup time 4.7 - 0.6 -
tsu(STO) Stop condition setup time 4.0 - 0.6 - μs
tw(STO:STA)
Stop to Start condition time
(bus free) 4.7 - 1.3 - μs
Cb
Capacitive load for each bus
line - 400 - 400 pF
STM32F415xx, STM32F417xx Electrical characteristics
Doc ID 022063 Rev 3 115/182
Figure 37. I2C bus AC waveforms and measurement circuit
1. Measurement points are done at CMOS levels: 0.3VDD and 0.7VDD.
Table 53. SCL frequency (fPCLK1= 42 MHz.,VDD = 3.3 V)(1)(2)
1. RP = External pull-up resistance, fSCL = I2C speed,
2. For speeds around 200 kHz, the tolerance on the achieved speed is of ±5%. For other speed ranges, the
tolerance on the achieved speed ±2%. These variations depend on the accuracy of the external
components used to design the application.
fSCL (kHz)
I2C_CCR value
RP = 4.7 kΩ
400 0x8019
300 0x8021
200 0x8032
100 0x0096
50 0x012C
20 0x02EE
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Electrical characteristics STM32F415xx, STM32F417xx
116/182 Doc ID 022063 Rev 3
I2S - SPI interface characteristics
Unless otherwise specified, the parameters given in Ta bl e 5 4 for SPI or in Ta b l e 5 5 for I2S
are derived from tests performed under the ambient temperature, fPCLKx frequency and VDD
supply voltage conditions summarized in Ta b l e 1 3 .
Refer to Section 5.3.16: I/O port characteristics for more details on the input/output alternate
function characteristics (NSS, SCK, MOSI, MISO for SPI and WS, CK, SD for I2S).
Table 54. SPI characteristics(1)(2)
1. Remapped SPI1 characteristics to be determined.
2. TBD stands for “to be defined”.
Symbol Parameter Conditions Min Max Unit
fSCK
1/tc(SCK)
SPI clock frequency Master mode - 37.5 MHz
Slave mode - 37.5
tr(SCL)
tf(SCL)
SPI clock rise and fall
time Capacitive load: C = 30 pF - 8 ns
DuCy(SCK) SPI slave input clock
duty cycle Slave mode 30 70 %
tsu(NSS)(3)
3. Based on characterization, not tested in production.
NSS setup time Slave mode 4tPCLK -
ns
th(NSS)(3) NSS hold time Slave mode 2tPCLK -
tw(SCLH)(3)
tw(SCLL)(3) SCK high and low time Master mode, fPCLK = TBD MHz TBD TBD
tsu(MI) (3)
tsu(SI)(3) Data input setup time Master mode 5 -
Slave mode 5 -
th(MI) (3)
th(SI)(3) Data input hold time Master mode 5 -
Slave mode 4 -
ta(SO)(3)(4)
4. Min time is for the minimum time to drive the output and the max time is for the maximum time to validate
the data.
Data output access
time Slave mode, fPCLK = 20 MHz 0 3 tPCLK
tdis(SO)(3)(5)
5. Min time is for the minimum time to invalidate the output and the max time is for the maximum time to put
the data in Hi-Z
Data output disable
time Slave mode 2 10
tv(SO) (3)(1) Data output valid time Slave mode (after enable edge) - 25
tv(MO)(3)(1) Data output valid time Master mode (after enable edge) - 5
th(SO)(3)
Data output hold time Slave mode (after enable edge) 15 -
th(MO)(3) Master mode (after enable edge) 2 -
STM32F415xx, STM32F417xx Electrical characteristics
Doc ID 022063 Rev 3 117/182
Figure 38. SPI timing diagram - slave mode and CPHA = 0
Figure 39. SPI timing diagram - slave mode and CPHA = 1(1)
1. Measurement points are done at CMOS levels: 0.3VDD and 0.7VDD.
ai14134c
SCK Input
CPHA= 0
MOSI
INPUT
MISO
OUT P UT
CPHA= 0
MS B O U T
MSB IN
BI T6 OU T
LSB IN
LSB OUT
CPOL=0
CPOL=1
BIT1 IN
NSS input
tSU(NSS)
tc(SCK)
th(NSS)
ta(SO)
tw(SCKH)
tw(SCKL)
tv(SO) th(SO) tr(SCK)
tf(SCK)
tdis(SO)
tsu(SI)
th(SI)
ai14135
SCK Input
CPHA=1
MOSI
INPUT
MISO
OUT P UT
CPHA=1
MS B O U T
MSB IN
BI T6 OU T
LSB IN
LSB OUT
CPOL=0
CPOL=1
BIT1 IN
tSU(NSS) tc(SCK) th(NSS)
ta(SO)
tw(SCKH)
tw(SCKL)
tv(SO) th(SO) tr(SCK)
tf(SCK)
tdis(SO)
tsu(SI) th(SI)
NSS input
Electrical characteristics STM32F415xx, STM32F417xx
118/182 Doc ID 022063 Rev 3
Figure 40. SPI timing diagram - master mode(1)
1. Measurement points are done at CMOS levels: 0.3VDD and 0.7VDD.
ai14136
SCK Input
CPHA= 0
MOSI
OUTUT
MISO
INP UT
CPHA= 0
MS BIN
M SB OUT
BIT6 IN
LSB OUT
LSB IN
CPOL=0
CPOL=1
B IT1 OUT
NSS input
tc(SCK)
tw(SCKH)
tw(SCKL)
tr(SCK)
tf(SCK)
th(MI)
High
SCK Input
CPHA=1
CPHA=1
CPOL=0
CPOL=1
tsu(MI)
tv(MO) th(MO)
STM32F415xx, STM32F417xx Electrical characteristics
Doc ID 022063 Rev 3 119/182
Table 55. I2S characteristics(1)
1. TBD stands for “to be defined”.
Symbol Parameter Conditions Min Max Unit
fCK
1/tc(CK)
I2S clock frequency Master TBD TBD MHz
Slave 0 TBD
tr(CK)
tf(CK)
I2S clock rise and fall time capacitive load
CL= 50 pF - TBD
ns
tv(WS) (2)
2. Based on design simulation and/or characterization results, not tested in production.
WS valid time Master TBD -
th(WS) (2) WS hold time Master TBD -
tsu(WS) (2) WS setup time Slave TBD -
th(WS) (2) WS hold time Slave TBD -
tw(CKH) (2)
tw(CKL) (2) CK high and low time Master fPCLK= TBD,
presc = TBD TBD -
tsu(SD_MR) (2)
tsu(SD_SR) (2) Data input setup time Master receiver
Slave receiver
TBD
TBD -
th(SD_MR)(2)(3)
th(SD_SR) (2)(3)
3. Depends on fPCLK. For example, if fPCLK=8 MHz, then TPCLK = 1/fPLCLK =125 ns.
Data input hold time Master receiver
Slave receiver
TBD
TBD -
th(SD_MR) (2)
th(SD_SR) (2) Data input hold time Master fPCLK = TBD
Slave fPCLK = TBD
TBD
TBD -
tv(SD_ST) (2)(3) Data output valid time
Slave transmitter
(after enable edge) - TBD
fPCLK = TBD - TBD
th(SD_ST) (2) Data output hold time Slave transmitter
(after enable edge) TBD -
tv(SD_MT) (2)(3) Data output valid time
Master transmitter
(after enable edge) - TBD
fPCLK = TBD TBD TBD
th(SD_MT) (2) Data output hold time Master transmitter
(after enable edge) TBD -
Electrical characteristics STM32F415xx, STM32F417xx
120/182 Doc ID 022063 Rev 3
Figure 41. I2S slave timing diagram (Philips protocol)(1)
1. Measurement points are done at CMOS levels: 0.3 × VDD and 0.7 × VDD.
2. LSB transmit/receive of the previously transmitted byte. No LSB transmit/receive is sent before the first
byte.
Figure 42. I2S master timing diagram (Philips protocol)(1)
1. Based on characterization, not tested in production.
2. LSB transmit/receive of the previously transmitted byte. No LSB transmit/receive is sent before the first
byte.
CK Input
CPOL = 0
CPOL = 1
tc(CK)
WS input
SDtransmit
SDreceive
tw(CKH) tw(CKL)
tsu(WS)tv(SD_ST) th(SD_ST)
th(WS)
tsu(SD_SR) th(SD_SR)
MSB receive Bitn receive LSB receive
MSB transmit Bitn transmit LSB transmit
ai14881b
LSB receive(2)
LSB transmit(2)
CK output
CPOL = 0
CPOL = 1
tc(CK)
WS output
SDreceive
SDtransmit
tw(CKH)
tw(CKL)
tsu(SD_MR)
tv(SD_MT) th(SD_MT)
th(WS)
th(SD_MR)
MSB receive Bitn receive LSB receive
MSB transmit Bitn transmit LSB transmit
ai14884b
tf(CK) tr(CK)
tv(WS)
LSB receive(2)
LSB transmit(2)
STM32F415xx, STM32F417xx Electrical characteristics
Doc ID 022063 Rev 3 121/182
USB OTG FS characteristics
This interface is present in both the USB OTG HS and USB OTG FS controllers.
Table 56. USB OTG FS startup time
Symbol Parameter Max Unit
tSTARTUP(1)
1. Guaranteed by design, not tested in production.
USB OTG FS transceiver startup time 1 µs
Table 57. USB OTG FS DC electrical characteristics
Symbol Parameter Conditions Min.(1)
1. All the voltages are measured from the local ground potential.
Typ. Max.(1) Unit
Input
levels
VDD
USB OTG FS operating
voltage 3.0(2)
2. The STM32F415xx and STM32F417xx USB OTG FS functionality is ensured down to 2.7 V but not the full
USB OTG FS electrical characteristics which are degraded in the 2.7-to-3.0 V VDD voltage range.
-3.6V
VDI(3)
3. Guaranteed by design, not tested in production.
Differential input sensitivity I(USB_FS_DP/DM,
USB_HS_DP/DM) 0.2 - -
VVCM(3) Differential common mode
range Includes VDI range 0.8 - 2.5
VSE(3) Single ended receiver
threshold 1.3 - 2.0
Output
levels
VOL Static output level low RL of 1.5 kΩ to 3.6 V(4)
4. RL is the load connected on the USB OTG FS drivers
--0.3
V
VOH Static output level high RL of 15 kΩ to VSS(4) 2.8 - 3.6
RPD
PA11, PA12, PB14, PB15
(USB_FS_DP/DM,
USB_HS_DP/DM) VIN = VDD
17 21 24
kΩ
PA9, PB13
(OTG_FS_VBUS,
OTG_HS_VBUS)
0.65 1.1 2.0
RPU
PA12, PB15 (USB_FS_DP,
USB_HS_DP) VIN = VSS 1.5 1.8 2.1
PA9, PB13
(OTG_FS_VBUS,
OTG_HS_VBUS)
VIN = VSS 0.25 0.37 0.55
Electrical characteristics STM32F415xx, STM32F417xx
122/182 Doc ID 022063 Rev 3
Figure 43. USB OTG FS timings: definition of data signal rise and fall time
Table 58. USB OTG FS electrical characteristics(1)
1. Guaranteed by design, not tested in production.
Driver characteristics
Symbol Parameter Conditions Min Max Unit
trRise time(2)
2. Measured from 10% to 90% of the data signal. For more detailed informations, please refer to USB
Specification - Chapter 7 (version 2.0).
CL = 50 pF 420ns
tfFall time(2) CL = 50 pF 4 20 ns
trfm Rise/ fall time matching tr/tf90 110 %
VCRS Output signal crossover voltage 1.3 2.0 V
Table 59. USB FS clock timing parameters(1)(2)
1. Guaranteed by design, not tested in production.
2. TBD stands for “to be defined”.
Parameter Symbol Min Nominal Max Unit
fHCLK value to guarantee proper operation of
USB FS interface - 14.2 MHz
Frequency (first transition) 8-bit ±10% FSTART_8BIT TBD TBD TBD MHz
Frequency (steady state) ±500 ppm FSTEADY TBD TBD TBD MHz
Duty cycle (first transition) 8-bit ±10% DSTART_8BIT TBD TBD TBD %
Duty cycle (steady state) ±500 ppm DSTEADY TBD TBD TBD %
Time to reach the steady state frequency and
duty cycle after the first transition TSTEADY --TBDms
Clock startup time after the
de-assertion of SuspendM
Peripheral TSTART_DEV --TBD
ms
Host TSTART_HOST ---
PHY preparation time after the first transition
of the input clock TPREP ---µs
ai14137
tf
Differen tial
data lines
VSS
V
CR S
tr
Crossover
points
STM32F415xx, STM32F417xx Electrical characteristics
Doc ID 022063 Rev 3 123/182
USB HS characteristics
Ta bl e 6 0 shows the USB HS operating voltage.
Figure 44. ULPI timing diagram
Table 60. USB HS DC electrical characteristics
Symbol Parameter Min.(1)
1. All the voltages are measured from the local ground potential.
Max.(1) Unit
Input level VDD USB OTG HS operating voltage 2.7 3.6 V
Table 61. USB HS clock timing parameters(1)
1. Guaranteed by design, not tested in production.
Parameter Symbol Min Nominal Max Unit
fHCLK value to guarantee proper operation of
USB HS interface 30 MHz
Frequency (first transition) 8-bit ±10% FSTART_8BIT 54 60 66 MHz
Frequency (steady state) ±500 ppm FSTEADY 59.97 60 60.03 MHz
Duty cycle (first transition) 8-bit ±10% DSTART_8BIT 40 50 60 %
Duty cycle (steady state) ±500 ppm DSTEADY 49.975 50 50.025 %
Time to reach the steady state frequency and
duty cycle after the first transition TSTEADY --1.4ms
Clock startup time after the
de-assertion of SuspendM
Peripheral TSTART_DEV --5.6
ms
Host TSTART_HOST ---
PHY preparation time after the first transition
of the input clock TPREP ---µs
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Electrical characteristics STM32F415xx, STM32F417xx
124/182 Doc ID 022063 Rev 3
Ethernet characteristics
Ta bl e 6 3 shows the Ethernet operating voltage.
Ta bl e 6 4 gives the list of Ethernet MAC signals for the SMI (station management interface)
and Figure 45 shows the corresponding timing diagram.
Figure 45. Ethernet SMI timing diagram
Table 62. ULPI timing
Parameter Symbol
Value(1)
1. VDD = 2.7 V to 3.6 V and TA = –40 to 85 °C.
Unit
Min. Max.
Control in (ULPI_DIR) setup time tSC
-2.0
ns
Control in (ULPI_NXT) setup time - 1.5
Control in (ULPI_DIR, ULPI_NXT) hold time tHC -
Data in setup time tSD -2.0
Data in hold time tHD 0-
Control out (ULPI_STP) setup time and hold time tDC -9.2
Data out available from clock rising edge tDD - 10.7
Table 63. Ethernet DC electrical characteristics
Symbol Parameter Min.(1)
1. All the voltages are measured from the local ground potential.
Max.(1) Unit
Input level VDD Ethernet operating voltage 2.7 3.6 V
Table 64. Dynamics characteristics: Ethernet MAC signals for SMI(1)
1. TBD stands for “to be defined”.
Symbol Rating Min Typ Max Unit
tMDC MDC cycle time (1.71 MHz, AHB = 72 MHz) TBD TBD TBD ns
td(MDIO) MDIO write data valid time TBD TBD TBD ns
tsu(MDIO) Read data setup time TBD TBD TBD ns
th(MDIO) Read data hold time TBD TBD TBD ns
ETH_MDC
ETH_MDIO(O)
ETH_MDIO(I)
tMDC
td(MDIO)
tsu(MDIO) th(MDIO)
ai15666c
STM32F415xx, STM32F417xx Electrical characteristics
Doc ID 022063 Rev 3 125/182
Ta bl e 6 5 gives the list of Ethernet MAC signals for the RMII and Figure 46 shows the
corresponding timing diagram.
Figure 46. Ethernet RMII timing diagram
Ta bl e 6 6 gives the list of Ethernet MAC signals for MII and Figure 46 shows the
corresponding timing diagram.
Figure 47. Ethernet MII timing diagram
Table 65. Dynamics characteristics: Ethernet MAC signals for RMII
Symbol Rating Min Typ Max Unit
tsu(RXD) Receive data setup time 2 - - ns
tih(RXD) Receive data hold time 1 - - ns
tsu(CRS) Carrier sense set-up time 0.5 - - ns
tih(CRS) Carrier sense hold time 2 - - ns
td(TXEN) Transmit enable valid delay time 8 9.5 11 ns
td(TXD) Transmit data valid delay time 8.5 10 11.5 ns
RMII_REF_CLK
RMII_TX_EN
RMII_TXD[1:0]
RMII_RXD[1:0]
RMII_CRS_DV
t
d(TXEN)
t
d(TXD)
t
su(RXD)
t
su(CRS)
t
ih(RXD)
t
ih(CRS)
ai15667
MII_RX_CLK
MII_RXD[3:0]
MII_RX_DV
MII_RX_ER
td(TXEN)
td(TXD)
tsu(RXD)
tsu(ER)
tsu(DV)
tih(RXD)
tih(ER)
tih(DV)
ai15668
MII_TX_CLK
MII_TX_EN
MII_TXD[3:0]
Electrical characteristics STM32F415xx, STM32F417xx
126/182 Doc ID 022063 Rev 3
CAN (controller area network) interface
Refer to Section 5.3.16: I/O port characteristics for more details on the input/output alternate
function characteristics (CANTX and CANRX).
5.3.20 12-bit ADC characteristics
Unless otherwise specified, the parameters given in Ta bl e 6 7 are derived from tests
performed under the ambient temperature, fPCLK2 frequency and VDDA supply voltage
conditions summarized in Ta b l e 1 3 .
Table 66. Dynamics characteristics: Ethernet MAC signals for MII(1)
1. TBD stands for “to be defined”.
Symbol Rating Min Typ Max Unit
tsu(RXD) Receive data setup time TBD TBD TBD ns
tih(RXD) Receive data hold time TBD TBD TBD ns
tsu(DV) Data valid setup time TBD TBD TBD ns
tih(DV) Data valid hold time TBD TBD TBD ns
tsu(ER) Error setup time TBD TBD TBD ns
tih(ER) Error hold time TBD TBD TBD ns
td(TXEN) Transmit enable valid delay time 13.4 15.5 17.7 ns
td(TXD) Transmit data valid delay time 12.9 16.1 19.4 ns
Table 67. ADC characteristics
Symbol Parameter Conditions Min Typ Max Unit
VDDA Power supply 1.8(1) -3.6V
VREF+ Positive reference voltage 1.8(1)(2)(3) -V
DDA V
fADC ADC clock frequency VDDA = 1.8(1)(3) to 2.4 V 0.6 15 18 MHz
VDDA = 2.4 to 3.6 V(3) 0.6 30 36 MHz
fTRIG(4) External trigger frequency
fADC = 30 MHz,
12-bit resolution - - 1764 kHz
--171/f
ADC
VAIN Conversion voltage range(5) 0 (VSSA or VREF-
tied to ground) -V
REF+ V
RAIN(4) External input impedance See Equation 1 for
details --50kΩ
RADC(4)(6) Sampling switch resistance - - 6 kΩ
CADC(4) Internal sample and hold
capacitor -4-pF
tlat(4) Injection trigger conversion
latency
fADC = 30 MHz - - 0.100 µs
--3
(7) 1/fADC
STM32F415xx, STM32F417xx Electrical characteristics
Doc ID 022063 Rev 3 127/182
tlatr(4) Regular trigger conversion
latency
fADC = 30 MHz - - 0.067 µs
--2
(7) 1/fADC
tS(4) Sampling time fADC = 30 MHz 0.100 - 16 µs
3 - 480 1/fADC
tSTAB(4) Power-up time - 2 3 µs
tCONV(4) Total conversion time (including
sampling time)
fADC = 30 MHz
12-bit resolution 0.50 - 16.40 µs
fADC = 30 MHz
10-bit resolution 0.43 - 16.34 µs
fADC = 30 MHz
8-bit resolution 0.37 - 16.27 µs
fADC = 30 MHz
6-bit resolution 0.30 - 16.20 µs
9 to 492 (tS for sampling +n-bit resolution for successive
approximation) 1/fADC
fS(4)
Sampling rate
(fADC = 30 MHz, and
tS = 3 ADC cycles)
12-bit resolution
Single ADC - - 2 Msps
12-bit resolution
Interleave Dual ADC
mode
- - 3.75 Msps
12-bit resolution
Interleave Triple ADC
mode
- - 6 Msps
IVREF+(4)
ADC VREF DC current
consumption in conversion
mode
fADC = 30 MHz
3 sampling time
12-bit resolution
- 300 500 µA
fADC = 30 MHz
480 sampling time
12-bit resolution
--16µA
IVDDA(4)
ADC VDDA DC current
consumption in conversion
mode
fADC = 30 MHz
3 sampling time
12-bit resolution
-1.61.8mA
fADC = 30 MHz
480 sampling time
12-bit resolution
--60µA
1. If an inverted reset signal is applied to PDR_ON, this value can be lowered to 1.7 V when the device operates in a reduced
temperature range (0 to 70 °C).
2. It is recommended to maintain the voltage difference between VREF+ and VDDA below 1.8 V.
3. VDDA -VREF+ < 1.2 V.
4. Based on characterization, not tested in production.
5. VREF+ is internally connected to VDDA and VREF- is internally connected to VSSA.
6. RADC maximum value is given for VDD=1.8 V, and minimum value for VDD=3.3 V.
Table 67. ADC characteristics (continued)
Symbol Parameter Conditions Min Typ Max Unit
Electrical characteristics STM32F415xx, STM32F417xx
128/182 Doc ID 022063 Rev 3
Equation 1: RAIN max formula
The formula above (Equation 1) is used to determine the maximum external impedance
allowed for an error below 1/4 of LSB. N = 12 (from 12-bit resolution) and k is the number of
sampling periods defined in the ADC_SMPR1 register.
a
Note: ADC accuracy vs. negative injection current: injecting a negative current on any analog input
pins should be avoided as this significantly reduces the accuracy of the conversion being
performed on another analog input. It is recommended to add a Schottky diode (pin to
ground) to analog pins which may potentially inject negative currents.
Any positive injection current within the limits specified for IINJ(PIN) and ΣIINJ(PIN) in
Section 5.3.16 does not affect the ADC accuracy.
7. For external triggers, a delay of 1/fPCLK2 must be added to the latency specified in Table 67.
Table 68. ADC accuracy at fADC = 30 MHz(1)
1. Better performance could be achieved in restricted VDD, frequency and temperature ranges.
Symbol Parameter Test conditions Typ Max(2)
2. Based on characterization, not tested in production.
Unit
ET Total unadjusted error
fPCLK2 = 60 MHz,
fADC = 30 MHz, RAIN < 10 kΩ,
VDDA = 1.8(3) to 3.6 V
3. If an inverted reset signal is applied to PDR_ON, this value can be lowered to 1.7 V when the device
operates in a reduced temperature range (0 to 70 °C).
±2 ±5
LSB
EO Offset error ±1.5 ±2.5
EG Gain error ±1.5 ±3
ED Differential linearity error ±1 ±2
EL Integral linearity error ±1.5 ±3
RAIN k0.5–()
fADC CADC 2N2+
()ln××
-------------------------------------------------------------- RADC
–=
STM32F415xx, STM32F417xx Electrical characteristics
Doc ID 022063 Rev 3 129/182
Figure 48. ADC accuracy characteristics
1. See also Ta b l e 6 8 .
2. Example of an actual transfer curve.
3. Ideal transfer curve.
4. End point correlation line.
5. ET = Total Unadjusted Error: maximum deviation between the actual and the ideal transfer curves.
EO = Offset Error: deviation between the first actual transition and the first ideal one.
EG = Gain Error: deviation between the last ideal transition and the last actual one.
ED = Differential Linearity Error: maximum deviation between actual steps and the ideal one.
EL = Integral Linearity Error: maximum deviation between any actual transition and the end point
correlation line.
Figure 49. Typical connection diagram using the ADC
1. Refer to Ta b l e 6 7 for the values of RAIN, RADC and CADC.
2. Cparasitic represents the capacitance of the PCB (dependent on soldering and PCB layout quality) plus the
pad capacitance (roughly 5 pF). A high Cparasitic value downgrades conversion accuracy. To remedy this,
fADC should be reduced.
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VAIN
0.6 V
VT
RADC(1)
C
ADC(1)
12-bit
converter
Sample and hold ADC
converter
Electrical characteristics STM32F415xx, STM32F417xx
130/182 Doc ID 022063 Rev 3
General PCB design guidelines
Power supply decoupling should be performed as shown in Figure 50 or Figure 51,
depending on whether VREF+ is connected to VDDA or not. The 10 nF capacitors should be
ceramic (good quality). They should be placed them as close as possible to the chip.
Figure 50. Power supply and reference decoupling (VREF+ not connected to VDDA)
1. VREF+ and VREF– inputs are both available on UFBGA176. VREF+ is also available on LQFP100, LQFP144,
and LQFP176. When VREF+ and VREF– are not available, they are internally connected to VDDA and VSSA.
Figure 51. Power supply and reference decoupling (VREF+ connected to VDDA)
1. VREF+ and VREF– inputs are both available on UFBGA176. VREF+ is also available on LQFP100, LQFP144,
and LQFP176. When VREF+ and VREF– are not available, they are internally connected to VDDA and VSSA.
VREF+
STM32F
VDDA
VSSA/V REF-
1 µF // 10 nF
1 µF // 10 nF
ai17535
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(See note 1)
VREF+/VDDA
STM32F
1 µF // 10 nF
VREF–/VSSA
ai17536
(See note 1)
(See note 1)
STM32F415xx, STM32F417xx Electrical characteristics
Doc ID 022063 Rev 3 131/182
5.3.21 Temperature sensor characteristics
5.3.22 VBAT monitoring characteristics
5.3.23 Embedded reference voltage
The parameters given in Ta b l e 7 1 are derived from tests performed under ambient
temperature and VDD supply voltage conditions summarized in Ta bl e 1 3 .
Table 69. TS characteristics
Symbol Parameter Min Typ Max Unit
TL(1) VSENSE linearity with temperature - ±1±2°C
Avg_Slope(1) Average slope - 2.5 mV/°C
V25(1) Voltage at 25 °C - 0.76 V
tSTART(2) Startup time - 6 10 µs
TS_temp(3)(2) ADC sampling time when reading the temperature (1 °C accuracy) 10 - - µs
1. Based on characterization, not tested in production.
2. Guaranteed by design, not tested in production.
3. Shortest sampling time can be determined in the application by multiple iterations.
Table 70. VBAT monitoring characteristics
Symbol Parameter Min Typ Max Unit
R Resistor bridge for VBAT -50-KΩ
QRatio on VBAT measurement - 2 -
Er(1) Error on Q –1 - +1 %
TS_vbat(2)(2) ADC sampling time when reading the VBAT
1 mV accuracy 5- -µs
1. Guaranteed by design, not tested in production.
2. Shortest sampling time can be determined in the application by multiple iterations.
Table 71. Embedded internal reference voltage
Symbol Parameter Conditions Min Typ Max Unit
VREFINT Internal reference voltage –40 °C < TA < +105 °C 1.18 1.21 1.24 V
TS_vrefint(1) ADC sampling time when reading the
internal reference voltage 10 - - µs
VRERINT_s(2) Internal reference voltage spread over the
temperature range VDD = 3 V - 3 5 mV
TCoeff(2) Temperature coefficient - 30 50 ppm/°C
tSTART(2) Startup time - 6 10 µs
1. Shortest sampling time can be determined in the application by multiple iterations.
2. Guaranteed by design, not tested in production.
Electrical characteristics STM32F415xx, STM32F417xx
132/182 Doc ID 022063 Rev 3
5.3.24 DAC electrical characteristics
Table 72. DAC characteristics
Symbol Parameter Min Typ Max Unit Comments
VDDA Analog supply voltage 1.8(1) -3.6 V
VREF+ Reference supply voltage 1.8(1) -3.6VV
REF+ ≤ VDDA
VSSA Ground 0 - 0 V
RLOAD(2) Resistive load with buffer ON 5 - - kΩ
RO(2) Impedance output with buffer
OFF -- 15 kΩ
When the buffer is OFF, the
Minimum resistive load between
DAC_OUT and VSS to have a 1%
accuracy is 1.5 MΩ
CLOAD(2) Capacitive load - - 50 pF
Maximum capacitive load at
DAC_OUT pin (when the buffer is
ON).
DAC_OUT
min(2)
Lower DAC_OUT voltage
with buffer ON 0.2 - - V
It gives the maximum output
excursion of the DAC.
It corresponds to 12-bit input code
(0x0E0) to (0xF1C) at VREF+ =
3.6 V and (0x1C7) to (0xE38) at
VREF+ = 1.8 V
DAC_OUT
max(2)
Higher DAC_OUT voltage
with buffer ON --V
DDA – 0.2 V
DAC_OUT
min(2)
Lower DAC_OUT voltage
with buffer OFF -0.5 - mV
It gives the maximum output
excursion of the DAC.
DAC_OUT
max(2)
Higher DAC_OUT voltage
with buffer OFF --V
REF+ – 1LSB V
IVREF+(3)
DAC DC VREF current
consumption in quiescent
mode (Standby mode)
- 170 240
µA
With no load, worst code (0x800)
at VREF+ = 3.6 V in terms of DC
consumption on the inputs
-50 75
With no load, worst code (0xF1C)
at VREF+ = 3.6 V in terms of DC
consumption on the inputs
IDDA(3)
DAC DC VDDA current
consumption in quiescent
mode (Standby mode)
- 280 380 µA With no load, middle code (0x800)
on the inputs
- 475 625 µA
With no load, worst code (0xF1C)
at VREF+ = 3.6 V in terms of DC
consumption on the inputs
DNL(3)
Differential non linearity
Difference between two
consecutive code-1LSB)
-- ±0.5 LSB
Given for the DAC in 10-bit
configuration.
-- ±2 LSB
Given for the DAC in 12-bit
configuration.
STM32F415xx, STM32F417xx Electrical characteristics
Doc ID 022063 Rev 3 133/182
INL(3)
Integral non linearity
(difference between
measured value at Code i
and the value at Code i on a
line drawn between Code 0
and last Code 1023)
-- ±1 LSB
Given for the DAC in 10-bit
configuration.
-- ±4 LSB
Given for the DAC in 12-bit
configuration.
Offset(3)
Offset error
(difference between
measured value at Code
(0x800) and the ideal value =
VREF+/2)
-- ±10 mV
Given for the DAC in 12-bit
configuration
-- ±3 LSB
Given for the DAC in 10-bit at
VREF+ = 3.6 V
-- ±12LSB
Given for the DAC in 12-bit at
VREF+ = 3.6 V
Gain
error(3) Gain error - - ±0.5 % Given for the DAC in 12-bit
configuration
tSETTLING(3)
Settling time (full scale: for a
10-bit input code transition
between the lowest and the
highest input codes when
DAC_OUT reaches final
value ±4LSB
-3 6 µs
CLOAD ≤ 50 pF,
RLOAD ≥ 5 kΩ
THD(3) Total Harmonic Distortion
Buffer ON -- - dB
CLOAD ≤ 50 pF,
RLOAD ≥ 5 kΩ
Update
rate(2)
Max frequency for a correct
DAC_OUT change when
small variation in the input
code (from code i to i+1LSB)
-- 1 MS/s
CLOAD ≤ 50 pF,
RLOAD ≥ 5 kΩ
tWAKEUP(3)
Wakeup time from off state
(Setting the ENx bit in the
DAC Control register)
-6.5 10 µs
CLOAD ≤ 50 pF, RLOAD ≥ 5 kΩ
input code between lowest and
highest possible ones.
PSRR+ (2)
Power supply rejection ratio
(to VDDA) (static DC
measurement)
- –67 –40 dB No RLOAD, CLOAD = 50 pF
1. If an inverted reset signal is applied to PDR_ON, this value can be lowered to 1.7 V when the device operates in a reduced
temperature range (0 to 70 °C).
2. Guaranteed by design, not tested in production.
3. Guaranteed by characterization, not tested in production.
Table 72. DAC characteristics (continued)
Symbol Parameter Min Typ Max Unit Comments
Electrical characteristics STM32F415xx, STM32F417xx
134/182 Doc ID 022063 Rev 3
Figure 52. 12-bit buffered /non-buffered DAC
1. The DAC integrates an output buffer that can be used to reduce the output impedance and to drive external loads directly
without the use of an external operational amplifier. The buffer can be bypassed by configuring the BOFFx bit in the
DAC_CR register.
5.3.25 FSMC characteristics
Asynchronous waveforms and timings
Figure 53 through Figure 56 represent asynchronous waveforms and Ta b le 7 3 through
Ta bl e 7 6 provide the corresponding timings. The results shown in these tables are obtained
with the following FSMC configuration:
●AddressSetupTime = 1
●AddressHoldTime = 0x1
●DataSetupTime = 0x1
●BusTurnAroundDuration = 0x0
In all timing tables, the THCLK is the HCLK clock period.
R
LOAD
C
LOAD
Buffered/Non-buffered DAC
DACx_OUT
Buffer(1)
12-bit
digital to
analog
converter
ai17157
STM32F415xx, STM32F417xx Electrical characteristics
Doc ID 022063 Rev 3 135/182
Figure 53. Asynchronous non-multiplexed SRAM/PSRAM/NOR read waveforms
1. Mode 2/B, C and D only. In Mode 1, FSMC_NADV is not used.
Table 73. Asynchronous non-multiplexed SRAM/PSRAM/NOR read timings(1)(2)
1. CL = 30 pF.
2. Based on characterization, not tested in production.
Symbol Parameter Min Max Unit
tw(NE) FSMC_NE low time 2THCLK–0.5 2 THCLK+1 ns
tv(NOE_NE) FSMC_NEx low to FSMC_NOE low 0.5 3 ns
tw(NOE) FSMC_NOE low time 2THCLK–2 2THCLK+ 2 ns
th(NE_NOE) FSMC_NOE high to FSMC_NE high hold time 0 - ns
tv(A_NE) FSMC_NEx low to FSMC_A valid - 4.5 ns
th(A_NOE) Address hold time after FSMC_NOE high 4 - ns
tv(BL_NE) FSMC_NEx low to FSMC_BL valid - 1.5 ns
th(BL_NOE) FSMC_BL hold time after FSMC_NOE high 0 - ns
tsu(Data_NE) Data to FSMC_NEx high setup time THCLK+4 - ns
tsu(Data_NOE) Data to FSMC_NOEx high setup time THCLK+4 - ns
th(Data_NOE) Data hold time after FSMC_NOE high 0 - ns
th(Data_NE) Data hold time after FSMC_NEx high 0 - ns
tv(NADV_NE) FSMC_NEx low to FSMC_NADV low - 2 ns
tw(NADV) FSMC_NADV low time - THCLK ns
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Electrical characteristics STM32F415xx, STM32F417xx
136/182 Doc ID 022063 Rev 3
Figure 54. Asynchronous non-multiplexed SRAM/PSRAM/NOR write waveforms
1. Mode 2/B, C and D only. In Mode 1, FSMC_NADV is not used.
Table 74. Asynchronous non-multiplexed SRAM/PSRAM/NOR write timings(1)(2)
1. CL = 30 pF.
2. Based on characterization, not tested in production.
Symbol Parameter Min Max Unit
tw(NE) FSMC_NE low time 3THCLK 3THCLK+ 4 ns
tv(NWE_NE) FSMC_NEx low to FSMC_NWE low THCLK–0.5 THCLK+0.5 ns
tw(NWE) FSMC_NWE low time THCLK–1 THCLK+2 ns
th(NE_NWE) FSMC_NWE high to FSMC_NE high hold time THCLK–1 - ns
tv(A_NE) FSMC_NEx low to FSMC_A valid - 0 ns
th(A_NWE) Address hold time after FSMC_NWE high THCLK– 2 - ns
tv(BL_NE) FSMC_NEx low to FSMC_BL valid - 1.5 ns
th(BL_NWE) FSMC_BL hold time after FSMC_NWE high THCLK– 1 - ns
tv(Data_NE) Data to FSMC_NEx low to Data valid - THCLK+3 ns
th(Data_NWE) Data hold time after FSMC_NWE high THCLK–1 - ns
tv(NADV_NE) FSMC_NEx low to FSMC_NADV low - 2 ns
tw(NADV) FSMC_NADV low time - THCLK+0.5 ns
NBL
Data
FSMC_NEx
FSMC_NBL[1:0]
FSMC_D[15:0]
t
v(BL_NE)
th(Data_NWE)
FSMC_NOE
Address
FSMC_A[25:0]
t
v(A_NE)
tw(NWE)
FSMC_NWE
tv(NWE_NE) th(NE_NWE)
th(A_NWE)
th(BL_NWE)
tv(Data_NE)
tw(NE)
ai14990
FSMC_NADV(1)
tv(NADV_NE)
tw(NADV)
STM32F415xx, STM32F417xx Electrical characteristics
Doc ID 022063 Rev 3 137/182
Figure 55. Asynchronous multiplexed PSRAM/NOR read waveforms
Table 75. Asynchronous multiplexed PSRAM/NOR read timings(1)(2)
1. CL = 30 pF.
2. Based on characterization, not tested in production.
Symbol Parameter Min Max Unit
tw(NE) FSMC_NE low time 3THCLK–1 3THCLK+1 ns
tv(NOE_NE) FSMC_NEx low to FSMC_NOE low 2THCLK–0.5 2THCLK+0.5 ns
tw(NOE) FSMC_NOE low time THCLK–1 THCLK+1 ns
th(NE_NOE) FSMC_NOE high to FSMC_NE high hold time 0 - ns
tv(A_NE) FSMC_NEx low to FSMC_A valid - 3 ns
tv(NADV_NE) FSMC_NEx low to FSMC_NADV low 1 2 ns
tw(NADV) FSMC_NADV low time THCLK– 2 THCLK+1 ns
th(AD_NADV)
FSMC_AD(adress) valid hold time after
FSMC_NADV high) THCLK -ns
th(A_NOE) Address hold time after FSMC_NOE high THCLK–1 - ns
th(BL_NOE) FSMC_BL time after FSMC_NOE high 0 - ns
tv(BL_NE) FSMC_NEx low to FSMC_BL valid - 2 ns
tsu(Data_NE) Data to FSMC_NEx high setup time THCLK+4 - ns
tsu(Data_NOE) Data to FSMC_NOE high setup time THCLK+4 - ns
th(Data_NE) Data hold time after FSMC_NEx high 0 - ns
th(Data_NOE) Data hold time after FSMC_NOE high 0 - ns
NBL
Data
FSMC_NBL[1:0]
FSMC_AD[15:0]
t
v(BL_NE)
th(Data_NE)
Address
FSMC_A[25:16]
t
v(A_NE)
FSMC_NWE
tv(A_NE)
ai14892b
Address
FSMC_NADV
tv(NADV_NE)
tw(NADV)
tsu(Data_NE)
t
h(AD_NADV)
FSMC_NE
FSMC_NOE
tw(NE)
tw(NOE)
tv(NOE_NE) th(NE_NOE)
th(A_NOE)
th(BL_NOE)
tsu(Data_NOE) th(Data_NOE)
Electrical characteristics STM32F415xx, STM32F417xx
138/182 Doc ID 022063 Rev 3
Figure 56. Asynchronous multiplexed PSRAM/NOR write waveforms
Table 76. Asynchronous multiplexed PSRAM/NOR write timings(1)(2)
1. CL = 30 pF.
2. Based on characterization, not tested in production.
Symbol Parameter Min Max Unit
tw(NE) FSMC_NE low time 4THCLK–0.5 4THCLK+3 ns
tv(NWE_NE) FSMC_NEx low to FSMC_NWE low THCLK–0.5 THCLK -0.5 ns
tw(NWE) FSMC_NWE low tim e 2THCLK–0.5 2THCLK+3 ns
th(NE_NWE) FSMC_NWE high to FSMC_NE high hold time THCLK -ns
tv(A_NE) FSMC_NEx low to FSMC_A valid - 0 ns
tv(NADV_NE) FSMC_NEx low to FSMC_NADV low 1 2 ns
tw(NADV) FSMC_NADV low time THCLK– 2 THCLK+ 1 ns
th(AD_NADV)
FSMC_AD(address) valid hold time after
FSMC_NADV high) THCLK–2 - ns
th(A_NWE) Address hold time after FSMC_NWE high THCLK -ns
th(BL_NWE) FSMC_BL hold time after FSMC_NWE high THCLK–2 - ns
tv(BL_NE) FSMC_NEx low to FSMC_BL valid - 1.5 ns
tv(Data_NADV) FSMC_NADV high to Data valid - THCLK–0.5 ns
th(Data_NWE) Data hold time after FSMC_NWE high THCLK -ns
NBL
Data
FSMC_NEx
FSMC_NBL[1:0]
FSMC_AD[15:0]
t
v(BL_NE)
th(Data_NWE)
FSMC_NOE
Address
FSMC_A[25:16]
t
v(A_NE)
tw(NWE)
FSMC_NWE
tv(NWE_NE) th(NE_NWE)
th(A_NWE)
th(BL_NWE)
tv(A_NE)
tw(NE)
ai14891B
Address
FSMC_NADV
tv(NADV_NE)
tw(NADV)
tv(Data_NADV)
t
h(AD_NADV)
STM32F415xx, STM32F417xx Electrical characteristics
Doc ID 022063 Rev 3 139/182
Synchronous waveforms and timings
Figure 57 through Figure 60 represent synchronous waveforms and Ta b le 7 8 through
Ta bl e 8 0 provide the corresponding timings. The results shown in these tables are obtained
with the following FSMC configuration:
●BurstAccessMode = FSMC_BurstAccessMode_Enable;
●MemoryType = FSMC_MemoryType_CRAM;
●WriteBurst = FSMC_WriteBurst_Enable;
●CLKDivision = 1; (0 is not supported, see the STM32F40xxx/41xxx reference manual)
●DataLatency = 1 for NOR Flash; DataLatency = 0 for PSRAM
In all timing tables, the THCLK is the HCLK clock period (with maximum
FSMC_CLK = 60 MHz).
Figure 57. Synchronous multiplexed NOR/PSRAM read timings
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140/182 Doc ID 022063 Rev 3
Table 77. Synchronous multiplexed NOR/PSRAM read timings(1)(2)
1. CL = 30 pF.
2. Based on characterization, not tested in production.
Symbol Parameter Min Max Unit
tw(CLK) FSMC_CLK period 2THCLK -ns
td(CLKL-NExL) FSMC_CLK low to FSMC_NEx low (x=0..2) - 0 ns
td(CLKL-NExH) FSMC_CLK low to FSMC_NEx high (x= 0…2) 2 - ns
td(CLKL-NADVL) FSMC_CLK low to FSMC_NADV low - 2 ns
td(CLKL-NADVH) FSMC_CLK low to FSMC_NADV high 2 - ns
td(CLKL-AV) FSMC_CLK low to FSMC_Ax valid (x=16…25) - 0 ns
td(CLKL-AIV) FSMC_CLK low to FSMC_Ax invalid (x=16…25) 0 - ns
td(CLKL-NOEL) FSMC_CLK low to FSMC_NOE low - 0 ns
td(CLKL-NOEH) FSMC_CLK low to FSMC_NOE high 2 - ns
td(CLKL-ADV) FSMC_CLK low to FSMC_AD[15:0] valid - 4.5 ns
td(CLKL-ADIV) FSMC_CLK low to FSMC_AD[15:0] invalid 0 - ns
tsu(ADV-CLKH) FSMC_A/D[15:0] valid data before FSMC_CLK high 6 - ns
th(CLKH-ADV) FSMC_A/D[15:0] valid data after FSMC_CLK high 0 - ns
STM32F415xx, STM32F417xx Electrical characteristics
Doc ID 022063 Rev 3 141/182
Figure 58. Synchronous multiplexed PSRAM write timings
Table 78. Synchronous multiplexed PSRAM write timings(1)(2)
1. CL = 30 pF.
2. Based on characterization, not tested in production.
Symbol Parameter Min Max Unit
tw(CLK) FSMC_CLK period 2THCLK -ns
td(CLKL-NExL) FSMC_CLK low to FSMC_NEx low (x=0..2) - 1 ns
td(CLKL-NExH) FSMC_CLK low to FSMC_NEx high (x= 0…2) 1 - ns
td(CLKL-NADVL) FSMC_CLK low to FSMC_NADV low - 0 ns
td(CLKL-NADVH) FSMC_CLK low to FSMC_NADV high 0 - ns
td(CLKL-AV) FSMC_CLK low to FSMC_Ax valid (x=16…25) - 0 ns
td(CLKL-AIV) FSMC_CLK low to FSMC_Ax invalid (x=16…25) 8 - ns
td(CLKL-NWEL) FSMC_CLK low to FSMC_NWE low - 0.5 ns
td(CLKL-NWEH) FSMC_CLK low to FSMC_NWE high 0 - ns
td(CLKL-ADIV) FSMC_CLK low to FSMC_AD[15:0] invalid 0 - ns
td(CLKL-DATA) FSMC_A/D[15:0] valid data after FSMC_CLK low - 3 ns
td(CLKL-NBLH) FSMC_CLK low to FSMC_NBL high 0 - ns
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142/182 Doc ID 022063 Rev 3
Figure 59. Synchronous non-multiplexed NOR/PSRAM read timings
Table 79. Synchronous non-multiplexed NOR/PSRAM read timings(1)(2)
1. CL = 30 pF.
2. Based on characterization, not tested in production.
Symbol Parameter Min Max Unit
tw(CLK) FSMC_CLK period 2THCLK –0.5 - ns
td(CLKL-NExL) FSMC_CLK low to FSMC_NEx low (x=0..2) - 0.5 ns
td(CLKL-NExH) FSMC_CLK low to FSMC_NEx high (x= 0…2) 0 - ns
td(CLKL-NADVL) FSMC_CLK low to FSMC_NADV low - 2 ns
td(CLKL-NADVH) FSMC_CLK low to FSMC_NADV high 3 - ns
td(CLKL-AV) FSMC_CLK low to FSMC_Ax valid (x=16…25) - 0 ns
td(CLKL-AIV) FSMC_CLK low to FSMC_Ax invalid (x=16…25) 2 - ns
td(CLKL-NOEL) FSMC_CLK low to FSMC_NOE low - 0.5 ns
td(CLKL-NOEH) FSMC_CLK low to FSMC_NOE high 1.5 - ns
tsu(DV-CLKH) FSMC_D[15:0] valid data before FSMC_CLK high 6 - ns
th(CLKH-DV) FSMC_D[15:0] valid data after FSMC_CLK high 3 - ns
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STM32F415xx, STM32F417xx Electrical characteristics
Doc ID 022063 Rev 3 143/182
Figure 60. Synchronous non-multiplexed PSRAM write timings
Table 80. Synchronous non-multiplexed PSRAM write timings(1)(2)
1. CL = 30 pF.
2. Based on characterization, not tested in production.
Symbol Parameter Min Max Unit
tw(CLK) FSMC_CLK period 2THCLK -ns
td(CLKL-NExL) FSMC_CLK low to FSMC_NEx low (x=0..2) - 1 ns
td(CLKL-NExH) FSMC_CLK low to FSMC_NEx high (x= 0…2) 1 - ns
td(CLKL-NADVL) FSMC_CLK low to FSMC_NADV low - 7 ns
td(CLKL-NADVH) FSMC_CLK low to FSMC_NADV high 6 - ns
td(CLKL-AV) FSMC_CLK low to FSMC_Ax valid (x=16…25) - 0 ns
td(CLKL-AIV) FSMC_CLK low to FSMC_Ax invalid (x=16…25) 6 - ns
td(CLKL-NWEL) FSMC_CLK low to FSMC_NWE low - 1 ns
td(CLKL-NWEH) FSMC_CLK low to FSMC_NWE high 2 - ns
td(CLKL-Data) FSMC_D[15:0] valid data after FSMC_CLK low - 3 ns
td(CLKL-NBLH) FSMC_CLK low to FSMC_NBL high 3 - ns
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Electrical characteristics STM32F415xx, STM32F417xx
144/182 Doc ID 022063 Rev 3
PC Card/CompactFlash controller waveforms and timings
Figure 61 through Figure 66 represent synchronous waveforms, and Ta b l e 8 1 and Ta bl e 8 2
provide the corresponding timings. The results shown in this table are obtained with the
following FSMC configuration:
●COM.FSMC_SetupTime = 0x04;
●COM.FSMC_WaitSetupTime = 0x07;
●COM.FSMC_HoldSetupTime = 0x04;
●COM.FSMC_HiZSetupTime = 0x00;
●ATT.FSMC_SetupTime = 0x04;
●ATT.FSMC_WaitSetupTime = 0x07;
●ATT.FSMC_HoldSetupTime = 0x04;
●ATT.FSMC_HiZSetupTime = 0x00;
●IO.FSMC_SetupTime = 0x04;
●IO.FSMC_WaitSetupTime = 0x07;
●IO.FSMC_HoldSetupTime = 0x04;
●IO.FSMC_HiZSetupTime = 0x00;
●TCLRSetupTime = 0;
●TARSetupTime = 0.
In all timing tables, the THCLK is the HCLK clock period.
Figure 61. PC Card/CompactFlash controller waveforms for common memory read
access
1. FSMC_NCE4_2 remains high (inactive during 8-bit access.
FSMC_NWE
tw(NOE)
FSMC_N
OE
FSMC_D[15:0]
FSMC_A[10:0]
FSMC_NCE4_2(1)
FSMC_NCE4_1
FSMC_NREG
FSMC_NIOWR
FSMC_NIORD
td(NCE4_1-NOE)
tsu(D-NOE) th(NOE-D)
tv(NCEx-A)
td(NREG-NCEx)
td(NIORD-NCEx)
th(NCEx-AI)
th(NCEx-NREG)
th(NCEx-NIORD)
th(NCEx-
NIOWR
)
ai14895b
STM32F415xx, STM32F417xx Electrical characteristics
Doc ID 022063 Rev 3 145/182
Figure 62. PC Card/CompactFlash controller waveforms for common memory write
access
td(NCE4_1-NWE) tw(NWE)
th(NWE-D)
tv(NCE4_1-A)
td(NREG-NCE4_1)
td(NIORD-NCE4_1)
th(NCE4_1-AI)
MEMxHIZ =1
tv(NWE-D)
th(NCE4_1-NREG)
th(NCE4_1-NIORD)
th(NCE4_1-NIOWR)
ai14896b
FSMC_NWE
FSMC_N
OE
FSMC_D[15:0]
FSMC_A[10:0]
FSMC_NCE4_1
FSMC_NREG
FSMC_NIOWR
FSMC_NIORD
td(NWE-NCE4_1)
td(D-NWE)
FSMC_NCE4_2 High
Electrical characteristics STM32F415xx, STM32F417xx
146/182 Doc ID 022063 Rev 3
Figure 63. PC Card/CompactFlash controller waveforms for attribute memory read
access
1. Only data bits 0...7 are read (bits 8...15 are disregarded).
td(NCE4_1-NOE) tw(NOE)
tsu(D-NOE) th(NOE-D)
tv(NCE4_1-A) th(NCE4_1-AI)
td(NREG-NCE4_1) th(NCE4_1-NREG)
ai14897b
FSMC_NWE
FSMC_NOE
FSMC_D[15:0](1)
FSMC_A[10:0]
FSMC_NCE4_2
FSMC_NCE4_1
FSMC_NREG
FSMC_NIOWR
FSMC_NIORD
td(NOE-NCE4_1)
High
STM32F415xx, STM32F417xx Electrical characteristics
Doc ID 022063 Rev 3 147/182
Figure 64. PC Card/CompactFlash controller waveforms for attribute memory write
access
1. Only data bits 0...7 are driven (bits 8...15 remains Hi-Z).
Figure 65. PC Card/CompactFlash controller waveforms for I/O space read access
tw(NWE)
tv(NCE4_1-A)
td(NREG-NCE4_1)
th(NCE4_1-AI)
th(NCE4_1-NREG)
tv(NWE-D)
ai14898b
FSMC_NWE
FSMC_NOE
FSMC_D[7:0](1)
FSMC_A[10:0]
FSMC_NCE4_2
FSMC_NCE4_1
FSMC_NREG
FSMC_NIOWR
FSMC_NIORD
td(NWE-NCE4_1)
High
td(NCE4_1-NWE)
td(NIORD-NCE4_1) tw(NIORD)
tsu(D-NIORD) td(NIORD-D)
tv(NCEx-A) th(NCE4_1-AI)
ai14899B
FSMC_NWE
FSMC_NOE
FSMC_D[15:0]
FSMC_A[10:0]
FSMC_NCE4_2
FSMC_NCE4_1
FSMC_NREG
FSMC_NIOWR
FSMC_NIORD
Electrical characteristics STM32F415xx, STM32F417xx
148/182 Doc ID 022063 Rev 3
Figure 66. PC Card/CompactFlash controller waveforms for I/O space write access
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Table 81. Switching characteristics for PC Card/CF read and write cycles
in attribute/common space(1)(2)
Symbol Parameter Min Max Unit
tv(NCEx-A) FSMC_Ncex low to FSMC_Ay valid - 0 ns
th(NCEx_AI) FSMC_NCEx high to FSMC_Ax invalid 4 - ns
td(NREG-NCEx) FSMC_NCEx low to FSMC_NREG valid - 3.5 ns
th(NCEx-NREG) FSMC_NCEx high to FSMC_NREG invalid THCLK+4 - ns
td(NCEx-NWE) FSMC_NCEx low to FSMC_NWE low - 5THCLK+0.5 ns
td(NCEx-NOE) FSMC_NCEx low to FSMC_NOE low - 5THCLK +0.5 ns
tw(NOE) FSMC_NOE low width 8THCLK–1 8THCLK+1 ns
td(NOE_NCEx) FSMC_NOE high to FSMC_NCEx high 5THCLK+2.5 - ns
tsu (D-NOE) FSMC_D[15:0] valid data before FSMC_NOE high 4.5 - ns
th(N0E-D) FSMC_N0E high to FSMC_D[15:0] invalid 3 - ns
tw(NWE) FSMC_NWE low width 8THCLK–0.5 8THCLK+ 3 ns
td(NWE_NCEx) FSMC_NWE high to FSMC_NCEx high 5THCLK–1 -ns
td(NCEx-NWE) FSMC_NCEx low to FSMC_NWE low - 5THCLK+ 1 ns
tv(NWE-D) FSMC_NWE low to FSMC_D[15:0] valid - 0 ns
th (NWE-D) FSMC_NWE high to FSMC_D[15:0] invalid 8THCLK –1 - ns
td (D-NWE) FSMC_D[15:0] valid before FSMC_NWE high 13THCLK –1 - ns
1. CL = 30 pF.
2. Based on characterization, not tested in production.
STM32F415xx, STM32F417xx Electrical characteristics
Doc ID 022063 Rev 3 149/182
NAND controller waveforms and timings
Figure 67 through Figure 70 represent synchronous waveforms, and Ta b l e 8 3 and Ta bl e 8 4
provide the corresponding timings. The results shown in this table are obtained with the
following FSMC configuration:
●COM.FSMC_SetupTime = 0x01;
●COM.FSMC_WaitSetupTime = 0x03;
●COM.FSMC_HoldSetupTime = 0x02;
●COM.FSMC_HiZSetupTime = 0x01;
●ATT.FSMC_SetupTime = 0x01;
●ATT.FSMC_WaitSetupTime = 0x03;
●ATT.FSMC_HoldSetupTime = 0x02;
●ATT.FSMC_HiZSetupTime = 0x01;
●Bank = FSMC_Bank_NAND;
●MemoryDataWidth = FSMC_MemoryDataWidth_16b;
●ECC = FSMC_ECC_Enable;
●ECCPageSize = FSMC_ECCPageSize_512Bytes;
●TCLRSetupTime = 0;
●TARSetupTime = 0.
In all timing tables, the THCLK is the HCLK clock period.
Table 82. Switching characteristics for PC Card/CF read and write cycles
in I/O space(1)(2)
Symbol Parameter Min Max Unit
tw(NIOWR) FSMC_NIOWR low width 8THCLK –1 - ns
tv(NIOWR-D) FSMC_NIOWR low to FSMC_D[15:0] valid - 5THCLK– 1 ns
th(NIOWR-D) FSMC_NIOWR high to FSMC_D[15:0] invalid 8THCLK– 2 - ns
td(NCE4_1-NIOWR) FSMC_NCE4_1 low to FSMC_NIOWR valid - 5THCLK+ 2.5 ns
th(NCEx-NIOWR) FSMC_NCEx high to FSMC_NIOWR invalid 5THCLK–1.5 - ns
td(NIORD-NCEx) FSMC_NCEx low to FSMC_NIORD valid - 5THCLK+ 2 ns
th(NCEx-NIORD) FSMC_NCEx high to FSMC_NIORD) valid 5THCLK– 1.5 - ns
tw(NIORD) FSMC_NIORD low width 8THCLK–0.5 - ns
tsu(D-NIORD) FSMC_D[15:0] valid before FSMC_NIORD high 9 - ns
td(NIORD-D) FSMC_D[15:0] valid after FSMC_NIORD high 0 - ns
1. CL = 30 pF.
2. Based on characterization, not tested in production.
Electrical characteristics STM32F415xx, STM32F417xx
150/182 Doc ID 022063 Rev 3
Figure 67. NAND controller waveforms for read access
Figure 68. NAND controller waveforms for write access
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STM32F415xx, STM32F417xx Electrical characteristics
Doc ID 022063 Rev 3 151/182
Figure 69. NAND controller waveforms for common memory read access
Figure 70. NAND controller waveforms for common memory write access
Table 83. Switching characteristics for NAND Flash read cycles(1)
1. CL = 30 pF.
Symbol Parameter Min Max Unit
tw(N0E) FSMC_NOE low width 4THCLK–
0.5 4THCLK+ 3 ns
tsu(D-NOE) FSMC_D[15-0] valid data before FSMC_NOE high 10 - ns
th(NOE-D) FSMC_D[15-0] valid data after FSMC_NOE high 0 - ns
td(ALE-NOE) FSMC_ALE valid before FSMC_NOE low - 3THCLK ns
th(NOE-ALE) FSMC_NWE high to FSMC_ALE invalid 3THCLK– 2 - ns
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Electrical characteristics STM32F415xx, STM32F417xx
152/182 Doc ID 022063 Rev 3
5.3.26 Camera interface (DCMI) timing specifications
5.3.27 SD/SDIO MMC card host interface (SDIO) characteristics
Unless otherwise specified, the parameters given in Ta bl e 8 6 are derived from tests
performed under ambient temperature, fPCLKx frequency and VDD supply voltage conditions
summarized in Ta b l e 1 3 .
Refer to Section 5.3.16: I/O port characteristics for more details on the input/output alternate
function characteristics (D[7:0], CMD, CK).
Figure 71. SDIO high-speed mode
Table 84. Switching characteristics for NAND Flash write cycles(1)
1. CL = 30 pF.
Symbol Parameter Min Max Unit
tw(NWE) FSMC_NWE low width 4THCLK–1 4THCLK+ 3 ns
tv(NWE-D) FSMC_NWE low to FSMC_D[15-0] valid - 0 ns
th(NWE-D) FSMC_NWE high to FSMC_D[15-0] invalid 3THCLK –2 - ns
td(D-NWE) FSMC_D[15-0] valid before FSMC_NWE high 5THCLK–3 - ns
td(ALE-NWE) FSMC_ALE valid before FSMC_NWE low - 3THCLK ns
th(NWE-ALE) FSMC_NWE high to FSMC_ALE invalid 3THCLK–2 - ns
Table 85. DCMI characteristics
Symbol Parameter Conditions Min Max
Frequency ratio DCMI_PIXCLK/fHCLK(1)
1. Maximum value of DCMI_PIXCLK = 54 MHz.
0.4
tW(CKH)
CK
D, CMD
(output)
D, CMD
(input)
tC
tW(CKL)
tOV tOH
tISU tIH
tftr
ai14887
STM32F415xx, STM32F417xx Electrical characteristics
Doc ID 022063 Rev 3 153/182
Figure 72. SD default mode
5.3.28 RTC characteristics
Table 86. SD / MMC characteristics(1)
1. TBD stands for “to be defined”.
Symbol Parameter Conditions Min Max Unit
fPP Clock frequency in data transfer
mode CL ≤ 30 pF TBD TBD MHz
- SDIO_CK/fPCLK2 frequency ratio - - TBD -
tW(CKL) Clock low time, fPP = 16 MHz CL ≤ 30 pF TBD -
ns
tW(CKH) Clock high time, fPP = 16 MHz CL ≤ 30 pF TBD -
trClock rise time CL ≤ 30 pF - TBD
tfClock fall time CL ≤ 30 pF - TBD
CMD, D inputs (referenced to CK)
tISU Input setup time CL ≤ 30 pF TBD -
ns
tIH Input hold time CL ≤ 30 pF TBD -
CMD, D outputs (referenced to CK) in MMC and SD HS mode
tOV Output valid time CL ≤ 30 pF - TBD
ns
tOH Output hold time CL ≤ 30 pF TBD -
CMD, D outputs (referenced to CK) in SD default mode(2)
2. Refer to SDIO_CLKCR, the SDI clock control register to control the CK output.
tOVD Output valid default time CL ≤ 30 pF - TBD
ns
tOHD Output hold default time CL ≤ 30 pF TBD -
CK
D, CMD
(output)
tOVD tOHD
ai14888
Table 87. RTC characteristics
Symbol Parameter Conditions Min Max
-f
PCLK1/RTCCLK frequency ratio Any read/write operation
from/to an RTC register 4-
Package characteristics STM32F415xx, STM32F417xx
154/182 Doc ID 022063 Rev 3
6 Package characteristics
6.1 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
STM32F415xx, STM32F417xx Package characteristics
Doc ID 022063 Rev 3 155/182
Figure 73. WLCSP90 - 0.400 mm pitch wafer level chip size package outline
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Table 88. WLCSP90 - 0.400 mm pitch wafer level chip size package mechanical data
Symbol
millimeters inches(1)
Min Typ Max Min Typ Max
A 0.520 0.570 0.620 0.0205 0.0224 0.0244
A1 0.165 0.190 0.215 0.0065 0.0075 0.0085
A2 0.350 0.380 0.410 0.0138 0.015 0.0161
b 0.240 0.270 0.300 0.0094 0.0106 0.0118
D 4.178 4.218 4.258 0.1645 0.1661 0.1676
E 3.964 3.969 4.004 0.1561 0.1563 0.1576
e 0.400 0.0157
e1 3.600 0.1417
e2 3.200 0.126
F 0.312 0.0123
G 0.385 0.0152
eee 0.050 0.0020
1. Values in inches are converted from mm and rounded to 4 decimal digits.
Package characteristics STM32F415xx, STM32F417xx
156/182 Doc ID 022063 Rev 3
Figure 74. LQFP64 – 10 x 10 mm 64 pin low-profile quad flat package outline
1. Drawing is not to scale.
ai14398b
A
A2
A1
c
L1
L
EE1
D
D1
e
b
Table 89. LQFP64 – 10 x 10 mm 64 pin low-profile quad flat package mechanical data
Symbol
millimeters inches(1)
Min Typ Max Min Typ Max
A 1.600 0.0630
A1 0.050 0.150 0.0020 0.0059
A2 1.350 1.400 1.450 0.0531 0.0551 0.0571
b 0.170 0.220 0.270 0.0067 0.0087 0.0106
c 0.090 0.200 0.0035 0.0079
D 12.000 0.4724
D1 10.000 0.3937
E 12.000 0.4724
E1 10.000 0.3937
e 0.500 0.0197
θ0° 3.5° 7° 0° 3.5° 7°
L 0.450 0.600 0.750 0.0177 0.0236 0.0295
L1 1.000 0.0394
NNumber of pins
64
1. Values in inches are converted from mm and rounded to 4 decimal digits.
STM32F415xx, STM32F417xx Package characteristics
Doc ID 022063 Rev 3 157/182
Figure 75. LQFP64 recommended footprint
1. Drawing is not to scale.
2. Dimensions are in millimeters.
48
3249
64 17
116
1.2
0.3
33
10.3
12.7
10.3
0.5
7.8
12.7
ai14909
Package characteristics STM32F415xx, STM32F417xx
158/182 Doc ID 022063 Rev 3
Figure 76. LQFP100, 14 x 14 mm 100-pin low-profile quad flat package outline
1. Drawing is not to scale.
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Table 90. LQPF100 – 14 x 14 mm 100-pin low-profile quad flat package mechanical data(1)
Symbol
millimeters inches
Min Typ Max Min Typ Max
A 1.600 0.0630
A1 0.050 0.150 0.0020 0.0059
A2 1.350 1.400 1.450 0.0531 0.0551 0.0571
b 0.170 0.220 0.270 0.0067 0.0087 0.0106
c 0.090 0.200 0.0035 0.0079
D 15.800 16.000 16.200 0.6220 0.6299 0.6378
D1 13.800 14.000 14.200 0.5433 0.5512 0.5591
D3 12.000 0.4724
E 15.80v 16.000 16.200 0.6220 0.6299 0.6378
E1 13.800 14.000 14.200 0.5433 0.5512 0.5591
E3 12.000 0.4724
e 0.500 0.0197
L 0.450 0.600 0.750 0.0177 0.0236 0.0295
L1 1.000 0.0394
k 0°3.5°7° 0°3.5°7°
ccc 0.080 0.0031
1. Values in inches are converted from mm and rounded to 4 decimal digits.
STM32F415xx, STM32F417xx Package characteristics
Doc ID 022063 Rev 3 159/182
Figure 77. LQFP100 recommended footprint
1. Drawing is not to scale.
2. Dimensions are in millimeters.
AI
Package characteristics STM32F415xx, STM32F417xx
160/182 Doc ID 022063 Rev 3
Figure 78. LQFP144, 20 x 20 mm, 144-pin low-profile quad flat package outline
1. Drawing is not to scale.
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Table 91. LQFP144, 20 x 20 mm, 144-pin low-profile quad flat package mechanical data
Symbol
millimeters inches(1)
Min Typ Max Min Typ Max
A 1.600 0.0630
A1 0.050 0.150 0.0020 0.0059
A2 1.350 1.400 1.450 0.0531 0.0551 0.0571
b 0.170 0.220 0.270 0.0067 0.0087 0.0106
c 0.090 0.200 0.0035 0.0079
D 21.800 22.000 22.200 0.8583 0.8661 0.874
D1 19.800 20.000 20.200 0.7795 0.7874 0.7953
D3 17.500 0.689
E 21.800 22.000 22.200 0.8583 0.8661 0.8740
E1 19.800 20.000 20.200 0.7795 0.7874 0.7953
E3 17.500 0.6890
e 0.500 0.0197
L 0.450 0.600 0.750 0.0177 0.0236 0.0295
L1 1.000 0.0394
k 0°3.5°7° 0°3.5°7°
ccc 0.080 0.0031
1. Values in inches are converted from mm and rounded to 4 decimal digits.
STM32F415xx, STM32F417xx Package characteristics
Doc ID 022063 Rev 3 161/182
Figure 79. LQFP144 recommended footprint
1. Drawing is not to scale.
2. Dimensions are in millimeters.
AIC
Package characteristics STM32F415xx, STM32F417xx
162/182 Doc ID 022063 Rev 3
Figure 80. UFBGA176+25 - ultra thin fine pitch ball grid array 10 × 10 × 0.6 mm,
package outline
1. Drawing is not to scale.
Table 92. UFBGA176+25 - ultra thin fine pitch ball grid array 10 × 10 × 0.6 mm
mechanical data
Symbol
millimeters inches(1)
1. Values in inches are converted from mm and rounded to 4 decimal digits.
Min Typ Max Min Typ Max
A 0.460 0.530 0.600 0.0181 0.0209 0.0236
A1 0.050 0.080 0.110 0.002 0.0031 0.0043
A4 0.400 0.450 0.500 0.0157 0.0177 0.0197
b 0.230 0.280 0.330 0.0091 0.0110 0.0130
D 9.900 10.000 10.100 0.3898 0.3937 0.3976
E 9.900 10.000 10.100 0.3898 0.3937 0.3976
e 0.650 0.0256
F 0.425 0.450 0.475 0.0167 0.0177 0.0187
ddd 0.080 0.0031
eee 0.150 0.0059
fff 0.080 0.0031
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STM32F415xx, STM32F417xx Package characteristics
Doc ID 022063 Rev 3 163/182
Figure 81. LQFP176 24 x 24 mm, 176-pin low-profile quad flat package outline
1. Drawing is not to scale.
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Table 93. LQFP176, 24 x 24 mm, 176-pin low-profile quad flat package mechanical data
Symbol
millimeters inches(1)
Min Typ Max Min Typ Max
A 1.600 0.0630
A1 0.050 0.150 0.0020
A2 1.350 1.450 0.0531 0.0060
b 0.170 0.270 0.0067 0.0106
C 0.090 0.200 0.0035 0.0079
D 23.900 24.100 0.9409 0.9488
E 23.900 24.100 0.9409 0.9488
e 0.500 0.0197
HD 25.900 26.100 1.0200 1.0276
HE 25.900 26.100 1.0200 1.0276
L 0.450 0.750 0.0177 0.0295
L1 1.000 0.0394
ZD 1.250 0.0492
ZE 1.250 0.0492
ccc 0.080 0.0031
k0 °7 °0 °7 °
1. Values in inches are converted from mm and rounded to 4 decimal digits.
Package characteristics STM32F415xx, STM32F417xx
164/182 Doc ID 022063 Rev 3
Figure 82. LQFP176 recommended footprint
1. Dimensions are expressed in millimeters.
4?&0?6
STM32F415xx, STM32F417xx Package characteristics
Doc ID 022063 Rev 3 165/182
6.2 Thermal characteristics
The maximum chip-junction temperature, TJ max, in degrees Celsius, may be calculated
using the following equation:
TJ max = TA max + (PD max x ΘJA)
Where:
●TA max is the maximum ambient temperature in °C,
●ΘJA is the package junction-to-ambient thermal resistance, in °C/W,
●PD max is the sum of PINT max and PI/O max (PD max = PINT max + PI/Omax),
●PINT max is the product of IDD and VDD, expressed in Watts. This is the maximum chip
internal power.
PI/O max represents the maximum power dissipation on output pins where:
PI/O max = Σ (VOL × IOL) + Σ((VDD – VOH) × IOH),
taking into account the actual VOL / IOL and VOH / IOH of the I/Os at low and high level in the
application.
Reference document
JESD51-2 Integrated Circuits Thermal Test Method Environment Conditions - Natural
Convection (Still Air). Available from www.jedec.org.
Table 94. Package thermal characteristics
Symbol Parameter Value Unit
ΘJA
Thermal resistance junction-ambient
LQFP64 - 10 × 10 mm / 0.5 mm pitch 46
°C/W
Thermal resistance junction-ambient
LQFP100 - 14 × 14 mm / 0.5 mm pitch 43
Thermal resistance junction-ambient
LQFP144 - 20 × 20 mm / 0.5 mm pitch 40
Thermal resistance junction-ambient
LQFP176 - 24 × 24 mm / 0.5 mm pitch 38
Thermal resistance junction-ambient
UFBGA176 - 10× 10 mm / 0.65 mm pitch 39
Thermal resistance junction-ambient
WLCSP90 - 0.400 mm pitch 38.1
Part numbering STM32F415xx, STM32F417xx
166/182 Doc ID 022063 Rev 3
7 Part numbering
For a list of available options (speed, package, etc.) or for further information on any aspect
of this device, please contact your nearest ST sales office.
Table 95. Ordering information scheme
Example: STM32 F 415 R E T 6 xxx
Device family
STM32 = ARM-based 32-bit microcontroller
Product type
F = general-purpose
Device subfamily
415 = STM32F41x, connectivity, cryptographic acceleration
417= STM32F41x, connectivity, camera interface, Ethernet
cryptographic acceleration, Ethernet,
Pin count
R = 64 pins
O = 90 pins
V = 100 pins
Z = 144 pins
I = 176 pins
Flash memory size
E = 512 Kbytes of Flash memory
G = 1024 Kbytes of Flash memory
Package
T = LQFP
H = UFBGA
Y = WLCSP
Temperature range
6 = Industrial temperature range, –40 to 85 °C.
7 = Industrial temperature range, –40 to 105 °C.
Options
xxx = programmed parts
TR = tape and reel
STM32F415xx, STM32F417xx Application block diagrams
Doc ID 022063 Rev 3 167/182
Appendix A Application block diagrams
A.1 Main applications versus package
Ta bl e 9 6 gives examples of configurations for each package.
Table 96. Main applications versus package for STM32F417xx microcontrollers
64 pins 100 pins 144 pins 176 pins
Config
1
Config
2
Config
3
Config
1
Config
2
Config
3
Config
4
Config
1
Config
2
Config
3
Config
4
Config
1
Config
2
USB 1
OTG
FS XXXXXX - X X X
FS XXXXXXXXXXXX
USB 2
HS
ULPI ---X---XX XX
OTGFS---X XX XX
FS - - - XXXXXXXXXX
Ethernet
MII -----XX XXXX
RMII----XXXXXXXXX
SPI/I2S2
SPI/I2S3 - X - - XXXXXXXXX
SDIO SDIO
SDIO
or
DCMI
SDIO
or
DCMI
-
SDIO
or
DCMI
SDIO
or
DCMI
SDIO
or
DCMI
X
SDIO
or
DCMI
X
SDIO
or
DCMI
XXX
DCMI
8bits
Data - X X XXX
10bits
Data - X X XXX
12bits
Data - X X XXX
14bits
Data ------- X XXX
FSMC
NOR/
RAM
Muxed
- - - XXXXXXXXXX
NOR/
RAM - - - XXXXXX
NAND- - - XXXXXXXXXX
CF -------XXXXXX
CAN - XX - XXX - - XX - X
Application block diagrams STM32F415xx, STM32F417xx
168/182 Doc ID 022063 Rev 3
A.2 Application example with regulator OFF
Figure 83. Regulator OFF/internal reset ON
1. This mode is available only on UFBGA176 and WLCSP90 packages.
Figure 84. Regulator OFF/internal reset OFF
1. This mode is available only on UFBGA176 and WLCSP90 packages.
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STM32F415xx, STM32F417xx Application block diagrams
Doc ID 022063 Rev 3 169/182
A.3 USB OTG full speed (FS) interface solutions
Figure 85. USB controller configured as peripheral-only and used
in Full speed mode
1. External voltage regulator only needed when building a VBUS powered device.
2. The same application can be developed using the OTG HS in FS mode to achieve enhanced performance
thanks to the large Rx/Tx FIFO and to a dedicated DMA controller.
Figure 86. USB controller configured as host-only and used in full speed mode
1. The current limiter is required only if the application has to support a VBUS powered device. A basic power
switch can be used if 5 V are available on the application board.
2. The same application can be developed using the OTG HS in FS mode to achieve enhanced performance
thanks to the large Rx/Tx FIFO and to a dedicated DMA controller.
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Application block diagrams STM32F415xx, STM32F417xx
170/182 Doc ID 022063 Rev 3
Figure 87. USB controller configured in dual mode and used in full speed mode
1. External voltage regulator only needed when building a VBUS powered device.
2. The current limiter is required only if the application has to support a VBUS powered device. A basic power
switch can be used if 5 V are available on the application board.
3. The ID pin is required in dual role only.
4. The same application can be developed using the OTG HS in FS mode to achieve enhanced performance
thanks to the large Rx/Tx FIFO and to a dedicated DMA controller.
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STM32F415xx, STM32F417xx Application block diagrams
Doc ID 022063 Rev 3 171/182
A.4 USB OTG high speed (HS) interface solutions
Figure 88. USB controller configured as peripheral, host, or dual-mode
and used in high speed mode
1. It is possible to use MCO1 or MCO2 to save a crystal. It is however not mandatory to clock the STM32F41x
with a 24 or 26 MHz crystal when using USB HS. The above figure only shows an example of a possible
connection.
2. The ID pin is required in dual role only.
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Application block diagrams STM32F415xx, STM32F417xx
172/182 Doc ID 022063 Rev 3
A.5 Complete audio player solutions
Two solutions are offered, illustrated in Figure 89 and Figure 90.
Figure 89 shows storage media to audio DAC/amplifier streaming using a software Codec.
This solution implements an audio crystal to provide audio class I2S accuracy on the master
clock (0.5% error maximum, see the Serial peripheral interface section in the reference
manual for details).
Figure 89. Complete audio player solution 1
Figure 90 shows storage media to audio Codec/amplifier streaming with SOF
synchronization of input/output audio streaming using a hardware Codec.
Figure 90. Complete audio player solution 2
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STM32F415xx, STM32F417xx Application block diagrams
Doc ID 022063 Rev 3 173/182
Figure 91. Audio player solution using PLL, PLLI2S, USB and 1 crystal
Figure 92. Audio PLL (PLLI2S) providing accurate I2S clock
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Application block diagrams STM32F415xx, STM32F417xx
174/182 Doc ID 022063 Rev 3
Figure 93. Master clock (MCK) used to drive the external audio DAC
1. I2S_SCK is the I2S serial clock to the external audio DAC (not to be confused with I2S_CK).
Figure 94. Master clock (MCK) not used to drive the external audio DAC
1. I2S_SCK is the I2S serial clock to the external audio DAC (not to be confused with I2S_CK).
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STM32F415xx, STM32F417xx Application block diagrams
Doc ID 022063 Rev 3 175/182
A.6 Ethernet interface solutions
Figure 95. MII mode using a 25 MHz crystal
1. fHCLK must be greater than 25 MHz.
2. Pulse per second when using IEEE1588 PTP optional signal.
Figure 96. RMII with a 50 MHz oscillator
1. fHCLK must be greater than 25 MHz.
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Application block diagrams STM32F415xx, STM32F417xx
176/182 Doc ID 022063 Rev 3
Figure 97. RMII with a 25 MHz crystal and PHY with PLL
1. fHCLK must be greater than 25 MHz.
2. The 25 MHz (PHY_CLK) must be derived directly from the HSE oscillator, before the PLL block.
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STM32F415xx, STM32F417xx Revision history
Doc ID 022063 Rev 3 177/182
8 Revision history
Table 97. Document revision history
Date Revision Changes
15-Sep-2011 1 Initial release.
24-Jan-2012 2
Added WLCSP90 package on cover page.
Renamed USART4 and USART5 into UART4 and UART5, respectively.
Updated number of USB OTG HS and FS in Table 2: STM32F415xx
and STM32F417xx: features and peripheral counts.
Updated Figure 3: Compatible board design between
STM32F10xx/STM32F2xx/STM32F4xx for LQFP144 package and
Figure 4: Compatible board design between STM32F2xx and
STM32F4xx for LQFP176 package, and removed note 1 and 2.
Updated Section 2.2.9: Flexible static memory controller (FSMC).
Modified I/Os used to reprogram the Flash memory for CAN2 and
USB OTG FS in Section 2.2.13: Boot modes.
Updated note in Section 2.2.14: Power supply schemes.
PDR_ON no more available on LQFP100 package. Updated
Section 2.2.16: Voltage regulator. Updated condition to obtain a
minimum supply voltage of 1.7 V in the whole document.
Renamed USART4/5 to UART4/5 and added LIN and IrDA feature for
UART4 and UART5 in Table 4: USART feature comparison.
Removed support of I2C for OTG PHY in Section 2.2.29: Universal
serial bus on-the-go full-speed (OTG_FS).
Added Table 5: Legend/abbreviations used in the pinout table.
Table 6: STM32F41x pin and ball definitions: replaced VSS_3, VSS_4,
and VSS_8 by VSS; reformatted Table 6: STM32F41x pin and ball
definitions to better highlight I/O structure, and alternate functions
versus additional functions; signal corresponding to LQFP100 pin 99
changed from PDR_ON to VSS; EVENTOUT added in the list of
alternate functions for all I/Os; ADC3_IN8 added as alternate function
for PF10; FSMC_CLE and FSMC_ALE added as alternate functions for
PD11 and PD12, respectively; PH10 alternate function
TIM15_CH1_ETR renamed TIM5_CH1; updated PA4 and PA5 I/O
structure to TTa.
Removed OTG_HS_SCL, OTG_HS_SDA, OTG_FS_INTN in Table 6:
STM32F41x pin and ball definitions and Table 8: Alternate function
mapping.
Changed TCM data RAM to CCM data RAM in Figure 16: STM32F41x
memory map.
Added IVDD and IVSS maximum values in Table 11: Current
characteristics.
Added Note 1 related to fHCLK, updated Note 2 in Table 13: General
operating conditions, and added maximum power dissipation values.
Updated Table 14: Limitations depending on the operating power
supply range.
Revision history STM32F415xx, STM32F417xx
178/182 Doc ID 022063 Rev 3
24-Jan-2012 2
(continued)
Added V12 in Table 18: Embedded reset and power control block
characteristics.
Updated Table 19: Typical and maximum current consumption in Run
mode, code with data processing running from Flash memory (ART
accelerator disabled) and Table 20: Typical and maximum current
consumption in Run mode, code with data processing running from
Flash memory (ART accelerator enabled) or RAM. Added Figure ,
Figure 23, Figure 24, and Figure 25.
Updated Table 21: Typical and maximum current consumption in Sleep
mode and removed Note 1.
Updated Table 22: Typical and maximum current consumptions in Stop
mode and Table 23: Typical and maximum current consumptions in
Standby mode, Table 24: Typical and maximum current consumptions
in VBAT mode, and Table 25: Switching output I/O current
consumption.
Section : On-chip peripheral current consumption: modified conditions,
and updated Table 26: Peripheral current consumption and Note 2.
Changed fHSE_ext to 50 MHz and tr(HSE)/tf(HSE) maximum value in
Table 28: High-speed external user clock characteristics.
Added Cin(LSE) in Table 29: Low-speed external user clock
characteristics.
Updated maximum PLL input clock frequency, removed related note,
and deleted jitter for MCO for RMII Ethernet typical value in Table 34:
Main PLL characteristics. Updated maximum PLLI2S input clock
frequency and removed related note in Table 35: PLLI2S (audio PLL)
characteristics.
Updated Section : Flash memory to specify that the devices are
shipped to customers with the Flash memory erased. Updated
Table 37: Flash memory characteristics, and added tME in Table 38:
Flash memory programming.
Updated Table 41: EMS characteristics, and Table 42: EMI
characteristics.
Updated Table 55: I2S characteristics
Updated Figure 44: ULPI timing diagram and Table 62: ULPI timing.
Added tCOUNTER and tMAX_COUNT in Table 50: Characteristics of TIMx
connected to the APB1 domain and Table 51: Characteristics of TIMx
connected to the APB2 domain. Updated Table 65: Dynamics
characteristics: Ethernet MAC signals for RMII.
Removed USB-IF certification in Section : USB OTG FS
characteristics.
Table 97. Document revision history (continued)
Date Revision Changes
STM32F415xx, STM32F417xx Revision history
Doc ID 022063 Rev 3 179/182
24-Jan-2012 2
(continued)
Updated Table 59: USB FS clock timing parameters and Table 61: USB
HS clock timing parameters
Updated Table 67: ADC characteristics.
Updated Table 68: ADC accuracy at fADC = 30 MHz.
Updated Note 1 in Table 72: DAC characteristics.
Section 5.3.25: FSMC characteristics: updated Ta b l e 7 3 toTa ble 8 4,
changed CL value to 30 pF, and modified FSMC configuration for
asynchronous timings and waveforms. Updated Figure 58:
Synchronous multiplexed PSRAM write timings.
Updated Table 94: Package thermal characteristics.
Appendix A.3: USB OTG full speed (FS) interface solutions: modified
Figure 85: USB controller configured as peripheral-only and used in
Full speed mode added Note 2, updated Figure 86: USB controller
configured as host-only and used in full speed mode and added
Note 2, changed Figure 87: USB controller configured in dual mode
and used in full speed mode and added Note 3.
Appendix A.4: USB OTG high speed (HS) interface solutions: removed
figures USB OTG HS device-only connection in FS mode and USB
OTG HS host-only connection in FS mode, and updated Figure 88:
USB controller configured as peripheral, host, or dual-mode and used
in high speed mode and added Note 2.
Added Appendix A.6: Ethernet interface solutions.
Table 97. Document revision history (continued)
Date Revision Changes
Revision history STM32F415xx, STM32F417xx
180/182 Doc ID 022063 Rev 3
31-May-2012 3
Updated Figure 5: STM32F41x block diagram and Figure 7: Regulator
ON/internal reset OFF
Added SDIO, added notes related to FSMC and SPI/I2S in Tabl e 2:
STM32F415xx and STM32F417xx: features and peripheral counts.
Starting from Silicon revision Z, USB OTG full-speed interface is now
available for all STM32F415xx devices.
Added full information on WLCSP90 package together with
corresponding part numbers.
Changed number of AHB buses to 3.
Modified available Flash memory sizes in Section 2.2.4: Embedded
Flash memory.
Modified number of maskable interrupt channels in Section 2.2.10:
Nested vectored interrupt controller (NVIC).
Updated case of Regulator ON/internal reset ON, Regulator
ON/internal reset OFF, and Regulator OFF/internal reset ON in
Section 2.2.16: Voltage regulator.
Updated standby mode description in Section 2.2.18: Low-power
modes.
Added Note 1 below Figure 14: STM32F41x UFBGA176 ballout.
Added Note 1 below Figure 15: STM32F41x WLCSP90 ballout.
Updated Table 6: STM32F41x pin and ball definitions.
Added Table 7: FSMC pin definition.
Removed OTG_HS_INTN alternate function in Table 6: STM32F41x
pin and ball definitions and Table 8: Alternate function mapping.
Removed I2S2_WS on PB6/AF5 in Table 8: Alternate function
mapping.
Replaced JTRST by NJTRST, removed
ETH_RMII _TX_CLK, and
modified I2S3ext_SD on PC11 in Table 8: Alternate function mapping.
Table 8: Alternate function mapping.
Added Table 9: STM32F41x register boundary addresses.
Updated Figure 16: STM32F41x memory map.
Updated VDDA and VREF+ decoupling capacitor in Figure 19: Power
supply scheme.
Added power dissipation maximum value for WLCSP90 in Table 13:
General operating conditions.
Updated VPOR/PDR in Table 18: Embedded reset and power control
block characteristics.
Updated notes in Table 19: Typical and maximum current consumption
in Run mode, code with data processing running from Flash memory
(ART accelerator disabled), Table 20: Typical and maximum current
consumption in Run mode, code with data processing running from
Flash memory (ART accelerator enabled) or RAM, and Ta bl e 21 :
Typical and maximum current consumption in Sleep mode.
Updated maximum current consumption at TA = 25 °n Table 22:
Typical and maximum current consumptions in Stop mode.
Table 97. Document revision history (continued)
Date Revision Changes
STM32F415xx, STM32F417xx Revision history
Doc ID 022063 Rev 3 181/182
31-May-2012 3
(continued)
Removed fHSE_ext typical value in Table 28: High-speed external user
clock characteristics. Updated Table 30: HSE 4-26 MHz oscillator
characteristics and Table 31: LSE oscillator characteristics (fLSE =
32.768 kHz).
Added fPLL48_OUT maximum value in Table 34: Main PLL
characteristics.
Modified equation 1 and 2 in Section 5.3.11: PLL spread spectrum
clock generation (SSCG) characteristics.
Updated Table 37: Flash memory characteristics, Table 38: Flash
memory programming, and Table 39: Flash memory programming with
VPP.
Updated Section : Output driving current.
Table 52: I2C characteristics: Note 3 updated and applied to th(SDA) in
Fast mode, and removed note 4 related to th(SDA) minimum value.
Updated Table 67: ADC characteristics. Updated note concerning ADC
accuracy vs. negative injection current below Table 68: ADC accuracy
at fADC = 30 MHz.
Added WLCSP90 thermal resistance in Table 94: Package thermal
characteristics.
Updated Table 88: WLCSP90 - 0.400 mm pitch wafer level chip size
package mechanical data.
Updated Figure 80: UFBGA176+25 - ultra thin fine pitch ball grid array
10 × 10 × 0.6 mm, package outline and Table 92: UFBGA176+25 -
ultra thin fine pitch ball grid array 10 × 10 × 0.6 mm mechanical data.
Added Figure 82: LQFP176 recommended footprint.
Removed 256 and 768 Kbyte Flash memory density from Table 95:
Ordering information scheme.
Appendix A.1: Main applications versus package: Removed number of
address lines for FSMC/NAND in Table 96: Main applications versus
package for STM32F417xx microcontrollers.
Appendix A.5: Complete audio player solutions: updated Figure 89:
Complete audio player solution 1 and Figure 90: Complete audio player
solution 2.
Table 97. Document revision history (continued)
Date Revision Changes
STM32F415xx, STM32F417xx
182/182 Doc ID 022063 Rev 3
Please Read Carefully:
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