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" . . . designed for general-purpose amplifier and low-speed switching applications. * High DC Current Gain -- hFE = 2500 (Typ) @ IC = 4.0 Adc * Collector Emitter Sustaining Voltage -- @ 100 mAdc VCEO(sus) = 80 Vdc (Min) -- BDX53B, 54B VCEO(sus) = 100 Vdc (Min) -- BDX53C, 54C * Low Collector-Emitter Saturation Voltage -- VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc VCE(sat) = 4.0 Vdc (Max) @ IC = 5.0 Adc * Monolithic Construction with Built-In Base-Emitter Shunt Resistors * TO-220AB Compact Package DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 80 - 100 VOLTS 65 WATTS IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIII IIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage VCEO VCB Collector-Base Voltage Emitter-Base Voltage Collector Current -- Continuous Peak Base Current Total Device Dissipation @ TC = 25_C Derate above 25_C Operating and Storage Junction Temperature Range BDX53B BDX54B BDX53C BDX54C Unit 80 100 Vdc 80 100 Vdc VEB IC 5.0 Vdc 8.0 12 Adc IB PD 0.2 Adc 60 0.48 Watts W/_C - 65 to + 150 _C TJ, Tstg CASE 221A-06 TO-220AB THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RJA 70 _C/W Thermal Resistance, Junction to Case RJC 70 _C/W PD, POWER DISSIPATION (WATTS) TA TC 4.0 80 3.0 60 TC 2.0 40 1.0 20 TA 0 0 20 40 60 80 100 120 140 160 T, TEMPERATURE (C) Figure 1. Power Derating REV 7 Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data 1 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII v v IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max 80 100 -- -- -- -- 0.5 0.5 -- -- 0.2 0.2 750 -- -- -- 2.0 4.0 Unit OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (1) (IC = 100 mAdc, IB = 0) VCEO(sus) BDX53B, BDX54B BDX53C, BDX54C Collector Cutoff Current (VCE = 40 Vdc, IB = 0) (VCE = 50 Vdc, IB = 0) BDX53B, BDX54B BDX53C, BDX54C Collector Cutoff Current (VCB = 80 Vdc, IE = 0) (VCB = 100 Vdc, IE = 0) BDX53B, BDX54B BDX53C, BDX54C Vdc ICEO mAdc ICBO mAdc ON CHARACTERISTICS (1) DC Current Gain (IC = 3.0 Adc, VCE = 3.0 Vdc) hFE -- Collector-Emitter Saturation Voltage (IC = 3.0 Adc, IB = 12 mAdc) VCE(sat) Vdc Base-Emitter Saturation Voltage (IC = 3.0 Adc, IC = 12 mA) VBE(sat) -- 2.5 Vdc hfe 4.0 -- -- -- -- 300 200 DYNAMIC CHARACTERISTICS Small-Signal Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc, f = 1.0 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) (1) Pulse Test: Pulse Width Cob BDX53B, 53C BDX54B, 54C 300 s, Duty Cycle pF 2%. 5.0 VCC - 30 V [ [ [ V1 APPROX 25 s -12 V tr, tf 10 ns DUTY CYCLE = 1.0% v 2 2.0 RC SCOPE [ + 4.0 V for td and tr, D1 is disconnected and V2 = 0 For NPN test circuit reverse all polarities Figure 2. Switching Time Test Circuit ts 3.0 t, TIME ( s) RB AND RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1 MUST BE FAST RECOVERY TYPES, e.g.: 1N5825 USED ABOVE IB 100 mA MSD6100 USED BELOW IB 100 mA TUT RB V2 APPROX + 8.0 V D1 51 8.0 k 120 0 tf 1.0 0.7 0.5 0.3 tr 0.2 0.1 0.07 0.05 0.1 VCC = 30 V IC/IB = 250 IB1 = IB2 TJ = 25C 0.2 td @ VBE(off) = 0 V 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (AMP) 5.0 7.0 10 Figure 3. Switching Times Motorola Bipolar Power Transistor Device Data r(t) EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 D = 0.5 0.3 0.2 0.2 0.1 P(pk) 0.05 0.1 0.07 0.05 RJC(t) = r(t) RJC RJC = 1.92C/W 0.02 t1 0.03 SINGLE PULSE 0.01 0.02 SINGLE PULSE t2 DUTY CYCLE, D = t1/t2 0.01 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 t, TIME OR PULSE WIDTH (ms) 20 30 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RJC(t) 50 100 200 300 500 1000 Figure 4. Thermal Response 20 100 s 500 s IC, COLLECTOR CURRENT (AMP) 10 5.0 2.0 1.0 0.5 0.2 0.1 5.0 ms 1.0 ms dc TJ = 150C BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25C (SINGLE PULSE) SECOND BREAKDOWN LIMITED CURVES APPLY BELOW RATED VCEO 0.05 t BDX53B, BDX54B BDX53C, BDX54C 0.02 1.0 There are two limitations on the power handling ability of a transistor average junction temperature and second breakdown. Safe operating area curves indicate I C -VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on TJ(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) 150_C. TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 20 30 2.0 3.0 5.0 7.0 10 50 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 70 100 Figure 5. Active-Region Safe Operating Area 300 TJ = + 25C 5000 3000 2000 200 C, CAPACITANCE (pF) hFE, SMALL-SIGNAL CURRENT GAIN 10,000 1000 500 300 200 TJ = 25C VCE = 3.0 V IC = 3.0 A 100 50 30 20 10 1.0 Cob 100 Cib 70 50 PNP NPN 2.0 5.0 PNP NPN 10 20 50 100 f, FREQUENCY (kHz) 200 Figure 6. Small-Signal Current Gain Motorola Bipolar Power Transistor Device Data 500 1000 30 0.1 0.2 0.5 1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) 50 100 Figure 7. Capacitance 3 NPN BDX53B, 53C PNP BDX54B, 54C 20,000 20,000 VCE = 4.0 V VCE = 4.0 V 5000 3000 2000 10,000 hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN 10,000 TJ = 150C 25C 1000 - 55C 5000 TJ = 150C 3000 2000 25C 1000 - 55C 500 500 300 200 0.1 300 200 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (AMP) 5.0 7.0 10 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (AMP) 5.0 7.0 10 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 8. DC Current Gain 3.0 TJ = 25C 2.6 IC = 2.0 A 4.0 A 6.0 A 2.2 1.8 1.4 1.0 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IB, BASE CURRENT (mA) 20 30 3.0 TJ = 25C 2.6 IC = 2.0 A 4.0 A 6.0 A 2.2 1.8 1.4 1.0 0.5 0.7 1.0 0.3 2.0 3.0 5.0 7.0 IB, BASE CURRENT (mA) 10 20 30 Figure 9. Collector Saturation Region 3.0 3.0 TJ = 25C 2.5 V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) TJ = 25C 2.0 1.5 1.0 VBE(sat) @ IC/IB = 250 VBE @ VCE = 4.0 V VCE(sat) @ IC/IB = 250 2.5 2.0 1.5 VBE @ VCE = 4.0 V 1.0 VBE(sat) @ IC/IB = 250 VCE(sat) @ IC/IB = 250 0.5 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.5 0.1 IC, COLLECTOR CURRENT (AMP) 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 IC, COLLECTOR CURRENT (AMP) Figure 10. "On" Voltages 4 Motorola Bipolar Power Transistor Device Data 10 PNP BDX54B, BDX54C + 5.0 + 4.0 *IC/IB + 3.0 v hFE/3 25C to 150C + 2.0 + 1.0 - 55C to 25C 0 *VC for VCE(sat) - 1.0 - 2.0 25C to 150C - 3.0 VB for VBE - 55 to 150C - 4.0 - 5.0 0.1 0.5 0.7 1.0 0.2 0.3 2.0 3.0 5.0 V, TEMPERATURE COEFFICIENT (mV/ C) V, TEMPERATURE COEFFICIENT (mV/ C) NPN BDX53B, BDX53C + 5.0 + 4.0 25C to 150C + 2.0 + 1.0 - 55C to 25C 0 *VC for VCE(sat) - 1.0 - 2.0 25C to 150C - 3.0 VB for VBE - 55 to 150C - 4.0 - 5.0 7.0 10 v hFE/3 *IC/IB + 3.0 0.1 0.5 0.7 1.0 0.2 0.3 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) Figure 11. Temperature Coefficients 104 103 105 REVERSE FORWARD IC, COLLECTOR CURRENT ( A) IC, COLLECTOR CURRENT ( A) 105 VCE = 30 V 102 TJ = 150C 101 100 100C 25C 10- 1 - 0.6 - 0.4 - 0.2 0 + 0.2 + 0.4 + 0.6 + 0.8 + 1.0 + 1.2 + 1.4 104 103 FORWARD REVERSE VCE = 30 V 102 101 TJ = 150C 100C 100 25C 10- 1 + 0.6 + 0.4 + 0.2 VBE, BASE-EMITTER VOLTAGE (VOLTS) 0 - 0.2 - 0.4 - 0.6 - 0.8 - 1.0 - 1.2 - 1.4 VBE, BASE-EMITTER VOLTAGE (VOLTS) Figure 12. Collector Cut-Off Region NPN BDX53B BDX53C COLLECTOR PNP BDX54B BDX54C BASE COLLECTOR BASE [ 8.0 k [ 120 [ 8.0 k [ 120 EMITTER EMITTER Figure 13. Darlington Schematic Motorola Bipolar Power Transistor Device Data 5 PACKAGE DIMENSIONS -T- B SEATING PLANE C F T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q 1 2 3 U H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D N INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 --- --- 0.080 STYLE 1: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 --- --- 2.04 BASE COLLECTOR EMITTER COLLECTOR CASE 221A-06 TO-220AB ISSUE Y Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. 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Box 20912; Phoenix, Arizona 85036. 1-800-441-2447 JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-3521-8315 MFAX: RMFAX0@email.sps.mot.com - TOUCHTONE (602) 244-6609 INTERNET: http://Design-NET.com HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 6 Motorola Bipolar Power Transistor Device Data *BDX53B/D* BDX53B/D