Semiconductor Components Industries, LLC, 2004
July, 2004 − Rev. 2 1Publication Order Number:
2N7002L/D
2N7002L
Small Signal MOSFET
60 V, 115 mA, N−Channel SOT−23
Features
•Pb−Free Packages are Available
MAXIMUM RATINGS
Rating Symbol Value Unit
Drain−Source Voltage VDSS 60 Vdc
Drain−Gate Voltage (RGS = 1.0 M) VDGR 60 Vdc
Drain Current
− Continuous TC = 25°C (Note 1)
− Continuous TC = 100°C (Note 1)
− Pulsed (Note 2)
ID
ID
IDM
±115
±75
±800
mAdc
Gate−Source Voltage
− Continuous
− Non−repetitive (tp ≤ 50 s) VGS
VGSM ±20
±40 Vdc
Vpk
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR−5 Board
(Note 3) TA = 25°C
Derate above 25°C
PD225
1.8 mW
mW/°C
Thermal Resistance, Junction to Ambient RJA 556 °C/W
Total Device Dissipation
Alumina Substrate,(Note 4) TA = 25°C
Derate above 25°C
PD300
2.4
mW
mW/°C
Thermal Resistance, Junction to Ambient RJA 417 °C/W
Junction and Storage Temperature TJ, Tstg −55 to
+150 °C
1. The Power Dissipation of the package may result in a lower continuous drain
current.
2. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2.0%.
3. FR−5 = 1.0 x 0.75 x 0.062 in.
4. Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina.
3
1
2
Device Package Shipping†
ORDERING INFORMATION
2N7002LT1 SOT−23 3000 Tape & Reel
N−Channel
SOT−23
CASE 318
STYLE 21
W
702
702 = Device Code
W = Work Week
MARKING DIAGRAM
& PIN ASSIGNMENT
3
21
Drain
Gate
2
1
3
Source
2N7002LT3 10,000 Tape & Reel
http://onsemi.com
2N7002LT1G SOT−23
(Pb−free)
3000 Tape & Reel
2N7002LT3G 10,000 Tape & Reel
60 V 7.5 @ 10 V,
500 mA
RDS(on) MAX
115 mA
ID MAXV(BR)DSS
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
2N7002L
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2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain−Source Breakdown Voltage
(VGS = 0, ID = 10 Adc) V(BR)DSS 60 − − Vdc
Zero Gate Voltage Drain Current TJ = 25°C
(VGS = 0, VDS = 60 Vdc) TJ = 125°CIDSS −
−−
−1.0
500 Adc
Gate−Body Leakage Current, Forward
(VGS = 20 Vdc) IGSSF − − 100 nAdc
Gate−Body Leakage Current, Reverse
(VGS = −20 Vdc) IGSSR − − −100 nAdc
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
(VDS = VGS, ID = 250 Adc) VGS(th) 1.0 − 2.5 Vdc
On−State Drain Current
(VDS ≥ 2.0 VDS(on), VGS = 10 Vdc) ID(on) 500 − − mA
Static Drain−Source On−State Voltage
(VGS = 10 Vdc, ID = 500 mAdc)
(VGS = 5.0 Vdc, ID = 50 mAdc)
VDS(on) −
−−
−3.75
0.375
Vdc
Static Drain−Source On−State Resistance
(VGS = 10 V, ID = 500 mAdc) TC = 25°C
TC = 125°C
(VGS = 5.0 Vdc, ID = 50 mAdc) TC = 25°C
TC = 125°C
rDS(on) −
−
−
−
−
−
−
−
7.5
13.5
7.5
13.5
Ohms
Forward Transconductance
(VDS ≥ 2.0 VDS(on), ID = 200 mAdc) gFS 80 − − mmhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Ciss − − 50 pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Coss − − 25 pF
Reverse Transfer Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Crss − − 5.0 pF
SWITCHING CHARACTERISTICS (Note 5)
T urn−On Delay Time (VDD = 25 Vdc, ID 500 mAdc, td(on) − − 20 ns
Turn−Off Delay Time
(VDD
=
25
Vdc
,
ID
500
mAdc
,
RG = 25 , RL = 50 , Vgen = 10 V) td(off) − − 40 ns
BODY−DRAIN DIODE RATINGS
Diode Forward On−Voltage
(IS = 11.5 mAdc, VGS = 0 V) VSD − − −1.5 Vdc
Source Current Continuous
(Body Diode) IS− − −115 mAdc
Source Current Pulsed ISM − − −800 mAdc
5. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2.0%.
2N7002L
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3
TYPICAL ELECTRICAL CHARACTERISTICS
ID, DRAIN CURRENT (AMPS)
rDS(on), STATIC DRAIN−SOURCE ON−RESISTANCE
(NORMALIZED)
VGS(th), THRESHOLD VOLTAGE (NORMALIZED) ID, DRAIN CURRENT (AMPS)
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0100 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0
VDS, DRAIN SOURCE VOLTAGE (VOLTS)
Figure 1. Ohmic Region
1.0
0.8
0.6
0.4
0.2
100 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0
VGS, GATE SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
1.2
1.05
1.1
1.10
1.0
0.95
0.9
0.85
0.8
0.75
0.7
−60 −20 +20 +60 +100 +140 −60 −20 +20 +60 +100 +140
T, TEMPERATURE (°C)
Figure 3. Temperature versus Static
Drain−Source On−Resistance
T, TEMPERATURE (°C)
Figure 4. Temperature versus Gate
Threshold Voltage
TA = 25°C
VGS = 10 V
9 V
8 V
7 V
6 V
4 V
3 V
5 V
VDS = 10 V −55 °C25°C
125°C
VGS = 10 V
ID = 200 mA
VDS = VGS
ID = 1.0 mA
2N7002L
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4
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AH
DJ
K
L
A
C
BS
H
GV
3
12
DIM
A
MIN MAX MIN MAX
MILLIMETERS
0.1102 0.1197 2.80 3.04
INCHES
B0.0472 0.0551 1.20 1.40
C0.0350 0.0440 0.89 1.11
D0.0150 0.0200 0.37 0.50
G0.0701 0.0807 1.78 2.04
H0.0005 0.0040 0.013 0.100
J0.0034 0.0070 0.085 0.177
K0.0140 0.0285 0.35 0.69
L0.0350 0.0401 0.89 1.02
S0.0830 0.1039 2.10 2.64
V0.0177 0.0236 0.45 0.60
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
4. 318−03 AND −07 OBSOLETE, NEW STANDARD
318−08.
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
0.8
0.031
0.9
0.035
0.95
0.037
0.95
0.037
2.0
0.079
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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
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2N7002L/D
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