StrongIRFET IRF8301MTRPbF DirectFET Power MOSFET Ultra-low RDS(on) l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Ultra-low Package Inductance l Optimized for high speed switching or high current switch (Power Tool) l Low Conduction and Switching Losses l Compatible with existing Surface Mount Techniques l Typical values (unless otherwise specified) VDSS VGS 30V max 20V max RDS(on) RDS(on) 1.3m@10V 1.9m@ 4.5V DirectFET ISOMETRIC MT Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) SQ SX ST MQ MX MT MP Description The IRF8301MPbF combines the latest HEXFET(R) Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve very low on-state resistance in a package that has the footprint of an SO-8 or a PQFN 5x6mm and only 0.7mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF8301MPbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses and very high current carrying capability make this product ideal for power tools. Ordering Information Base Part Number Package Type IRF8301MPbF DirectFET MT VGS ID @ T A = 25C ID @ T A = 70C ID @ T C = 25C IDM EAS IAR Parameter Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Single Pulse Avalanche Energy Avalanche Current g e e f Typical RDS(on) (m) 6 ID = 32A 5 4 3 T J = 125C 2 1 T J = 25C 0 0 5 10 15 20 VGS, Gate -to -Source Voltage (V) Fig 1. Typical On-Resistance vs. Gate Voltage 1 IRF8301MTRPbF www.irf.com (c) 2013 International Rectifier Units 20 34 27 192 250 260 25 h g Orderable Part Number Max. VGS, Gate-to-Source Voltage (V) Absolute Maximum Ratings Standard Pack Form Quantity Tape and Reel 4800 A mJ A 5.0 ID= 25A 4.0 VDS= 24V VDS= 15V 3.0 2.0 1.0 0.0 0 10 20 30 40 50 60 QG, Total Gate Charge (nC) Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage September 6, 2013 IRF8301MTRPbF Static @ TJ = 25C (unless otherwise specified) Min. Typ. BVDSS Drain-to-Source Breakdown Voltage Parameter 30 --- Max. Units --- VDSS/TJ R DS(on) Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance --- --- 21 1.3 --- 1.5 mV/C Reference to 25C, ID = 1mA m VGS = 10V, ID = 32A --- 1.9 2.4 VGS = 4.5V, ID = 25A V Conditions VGS = 0V, ID = 250A i i VGS(th) VGS(th)/TJ Gate Threshold Voltage Gate Threshold Voltage Coefficient 1.35 --- 1.7 -6.0 2.35 --- IDSS Drain-to-Source Leakage Current --- --- 1.0 A VDS = 24V, VGS = 0V IGSS Gate-to-Source Forward Leakage --- --- --- --- 150 100 nA VDS = 24V, VGS = 0V, TJ = 125C VGS = 20V Gate-to-Source Reverse Leakage --- --- -100 Forward Transconductance Total Gate Charge 150 --- --- 51 --- 77 Qgs1 Pre-Vth Gate-to-Source Charge --- 12 --- Qgs2 Qgd Post-Vth Gate-to-Source Charge Gate-to-Drain Charge --- --- 5.4 16 --- --- Qgodr gfs Qg V VDS = VGS, ID = 150A mV/C VGS = -20V S VDS = 15V, ID = 25A VDS = 15V nC Gate Charge Overdrive --- 18 --- Qsw Qoss Switch Charge (Qgs2 + Qgd) Output Charge --- --- 21 28 --- --- nC RG Gate Resistance --- 1.0 3.0 td(on) tr Turn-On Delay Time Rise Time --- --- 20 30 --- --- ns td(off) Turn-Off Delay Time --- 25 --- tf C iss Fall Time Input Capacitance --- --- 17 6140 --- --- C oss Output Capacitance --- 1270 --- C rss Reverse Transfer Capacitance --- 590 --- Min. Typ. VGS = 4.5V ID = 25A See Fig. 15 VDS = 16V, VGS = 0V VDD = 15V, VGS = 4.5V ID = 25A i RG = 1.8 See Fig. 17 VGS = 0V pF VDS = 15V = 1.0MHz Diode Characteristics Parameter Max. Units Conditions MOSFET symbol IS Continuous Source Current (Body Diode) --- --- 110 ISM Pulsed Source Current --- --- 250 VSD (Body Diode) Diode Forward Voltage --- 0.77 1.0 V TJ = 25C, IS = 25A, VGS = 0V trr Reverse Recovery Time --- 27 41 ns Qrr Reverse Recovery Charge --- 45 68 nC TJ = 25C, IF = 25A di/dt = 500A/s g A Notes: Click on this section to link to the appropriate technical paper. Click on this section to link to the DirectFET Website. Surface mounted on 1 in. square Cu board, steady state. 2 www.irf.com (c) 2013 International Rectifier showing the integral reverse p-n junction diode. i i TC measured with thermocouple mounted to top (Drain) of part. Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25C, L = 0.82mH, RG = 25, IAS = 25A. Pulse width 400s; duty cycle 2%. September 6, 2013 IRF8301MTRPbF Absolute Maximum Ratings e e f PD @TA = 25C PD @TA = 70C PD @TC = 25C TP TJ TSTG Parameter Power Dissipation Power Dissipation Power Dissipation Peak Soldering Temperature Operating Junction and Storage Temperature Range Max. Units 2.8 1.8 89 270 -40 to + 150 W C Thermal Resistance Parameter el jl kl fl RJA RJA RJA RJC RJ-PCB Junction-to-Ambient Junction-to-Ambient Junction-to-Ambient Junction-to-Case Junction-to-PCB Mounted Linear Derating Factor e Typ. Max. Units --- 12.5 20 --- 1.0 45 --- --- 1.4 --- C/W 0.022 W/C Thermal Response ( Z thJA ) 100 10 1 D = 0.50 0.20 0.10 0.05 0.02 0.01 0.1 0.01 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + Tc SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100 1000 t1 , Rectangular Pulse Duration (sec) Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient Thermal Response ( Z thJC ) C/W 10 1 D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 0.01 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 4. Maximum Effective Transient Thermal Impedance, Junction-to-Case 3 www.irf.com (c) 2013 International Rectifier September 6, 2013 IRF8301MTRPbF Notes: Used double sided cooling , mounting pad with large heatsink. Mounted on minimum footprint full size board with metalized R is measured at TJ of approximately 90C. back and with small clip heatsink. Surface mounted on 1 in. square Cu (still air). 4 Mounted to a PCB with small clip heatsink (still air) www.irf.com (c) 2013 International Rectifier Mounted on minimum footprint full size board with metalized back and with small clip heatsink (still air) September 6, 2013 IRF8301MTRPbF 1000 1000 100 BOTTOM TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 10V 5.0V 4.5V 4.0V 3.5V 3.0V 2.8V 2.5V 100 10 2.5V 1 BOTTOM 2.5V 10 60s PULSE WIDTH 60s PULSE WIDTH Tj = 25C 0.1 0.1 1 Tj = 150C 1 10 0.1 100 VDS, Drain-to-Source Voltage (V) 100 2.0 ID = 32A VDS = 15V 60s PULSE WIDTH Typical RDS(on) (Normalized) ID, Drain-to-Source Current (A) 10 Fig 6. Typical Output Characteristics 1000 100 T J = 150C T J = 25C T J = -40C 10 1 V GS = 10V V GS = 4.5V 1.5 1.0 0.5 0.1 1.0 1.5 2.0 2.5 3.0 3.5 4.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 T J , Junction Temperature (C) VGS, Gate-to-Source Voltage (V) Fig 8. Normalized On-Resistance vs. Temperature Fig 7. Typical Transfer Characteristics 5 100000 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd Typical RDS(on) ( m) 10000 Ciss Coss 1000 Vgs = 3.5V Vgs = 4.0V Vgs = 4.5V Vgs = 5.0V Vgs = 8.0V Vgs = 10V 4 C oss = C ds + C gd C, Capacitance(pF) 1 V DS, Drain-to-Source Voltage (V) Fig 5. Typical Output Characteristics Crss T J = 25C 3 2 1 0 100 1 10 100 VDS, Drain-to-Source Voltage (V) Fig 9. Typical Capacitance vs.Drain-to-Source Voltage 5 VGS 10V 5.0V 4.5V 4.0V 3.5V 3.0V 2.8V 2.5V www.irf.com (c) 2013 International Rectifier 0 50 100 150 200 ID, Drain Current (A) Fig 10. Typical On-Resistance vs. Drain Current and Gate Voltage September 6, 2013 IRF8301MTRPbF 1000 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 1000 T J = 150C 100 OPERATION IN THIS AREA LIMITED BY R DS(on) 10msec 100 T J = 25C T J = -40C 10 1 100sec DC 10 1 Tc = 25C Tj = 150C Single Pulse VGS = 0V 0.1 0 0 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1 VSD, Source-to-Drain Voltage (V) 3.0 Typical VGS(th) Gate threshold Voltage (V) 160 120 80 40 2.5 2.0 1.5 1.0 75 100 125 ID = 100A ID = 150A ID = 250A ID = 1.0mA ID = 1.0A 0.5 0 50 100 Fig 12. Maximum Safe Operating Area 200 25 10 VDS, Drain-to-Source Voltage (V) Fig 11. Typical Source-Drain Diode Forward Voltage ID, Drain Current (A) 1msec -75 -50 -25 150 0 25 50 75 100 125 150 T J , Temperature ( C ) T C , Case Temperature (C) Fig 13. Maximum Drain Current vs. Case Temperature Fig 14. Typical Threshold Voltage vs. Junction Temperature EAS , Single Pulse Avalanche Energy (mJ) 1200 ID 2.7A 3.9A BOTTOM 25A TOP 1000 800 600 400 200 0 25 50 75 100 125 150 Starting T J , Junction Temperature (C) Fig 15. Maximum Avalanche Energy vs. Drain Current 6 www.irf.com (c) 2013 International Rectifier September 6, 2013 IRF8301MTRPbF Id Vds Vgs L VCC DUT 0 20K 1K Vgs(th) S Qgodr Fig 16a. Gate Charge Test Circuit Qgd Qgs2 Qgs1 Fig 16b. Gate Charge Waveform V(BR)DSS 15V DRIVER L VDS tp D.U.T V RGSG + - VDD IAS 20V A 0.01 tp I AS Fig 17b. Unclamped Inductive Waveforms Fig 17a. Unclamped Inductive Test Circuit VDS VGS RG RD VDS 90% D.U.T. + - V DD VGS Pulse Width 1 s Duty Factor 0.1 % 10% VGS td(on) Fig 18a. Switching Time Test Circuit 7 www.irf.com (c) 2013 International Rectifier tr t d(off) tf Fig 18b. Switching Time Waveforms September 6, 2013 IRF8301MTRPbF Driver Gate Drive D.U.T P.W. + + - RG * * * * * *** D.U.T. ISD Waveform Reverse Recovery Current + dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test P.W. Period VGS=10V Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer - D= Period V DD ** + Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage - Body Diode VDD Forward Drop Inductor Curent ISD Ripple 5% * Use P-Channel Driver for P-Channel Measurements ** Reverse Polarity for P-Channel *** VGS = 5V for Logic Level Devices Fig 19. Diode Reverse Recovery Test Circuit for HEXFET(R) Power MOSFETs DirectFET Board Footprint, MT Outline (Medium Size Can, T-Designation). Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs. G = GATE D = DRAIN S = SOURCE D S D G D S D Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 8 www.irf.com (c) 2013 International Rectifier September 6, 2013 IRF8301MTRPbF DirectFET Outline Dimension, MT Outline (Medium Size Can, T-Designation). Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs. DIMENSIONS METRIC MAX CODE MIN 6.35 A 6.25 5.05 B 4.80 3.95 C 3.85 0.45 D 0.35 0.82 E 0.78 0.92 F 0.88 1.82 G 1.78 H 0.98 1.02 0.67 J 0.63 K 0.88 1.01 2.63 L 2.46 M 0.616 0.676 R 0.020 0.080 0.17 P 0.08 IMPERIAL MIN 0.246 0.189 0.152 0.014 0.031 0.035 0.070 0.039 0.025 0.035 0.097 0.0235 0.0008 0.003 MAX 0.250 0.199 0.156 0.018 0.032 0.036 0.072 0.040 0.026 0.039 0.104 0.0274 0.0031 0.007 DirectFET Part Marking Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 9 www.irf.com (c) 2013 International Rectifier September 6, 2013 IRF8301MTRPbF DirectFET Tape & Reel Dimension (Showing component orientation). LOADED TAPE FEED DIRECTION 8301 NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as IRF8301MTRPbF IRF6726MTRPBF). For 1000 parts on 7" l d IRF6726MTR1PBF Z>/DE^/KE^ ^dEZKWd/KE Ydz K & ' , DdZ/ D/E Dy E E /DWZ/> D/E Dy E E E E E E E E NOTE: CONTROLLING DIMENSIONS IN MM CODE A B C D E F G H DIMENSIONS METRIC IMPERIAL MIN MAX MIN MAX 0.311 0.319 7.90 8.10 0.154 0.161 3.90 4.10 0.469 0.484 11.90 12.30 0.215 0.219 5.45 5.55 0.201 0.209 5.10 5.30 0.256 0.264 6.50 6.70 0.059 N.C 1.50 N.C 0.059 1.50 0.063 1.60 Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ Revision History Date 09/05/2013 Comments *Added the StrongIRFET logo on the top of the part number, on page 1. IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 10 www.irf.com (c) 2013 International Rectifier September 6, 2013