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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
SOT-23 Plastic-Encapsulate Transistors
SS8550LT1 TRANSISTOR（ PNP ）
FEATURES
Power dissipation
P
CM : 0.3 W（Tamb=25℃）
Collector current
ICM : -1.5 A
Collector-base voltage
V(BR)CBO : -40 V
Operating and storage junction temperature range
T
J，Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS（Tamb=25℃ unless otherwise specified）
Parameter Symbol Test conditions MIN MAX UNIT
Collector-base breakdown voltage V(BR)CBO Ic= -100 μA， IE=0 -40 V
Collector-emitter breakdown voltage V(BR)CEO Ic= -0.1mA， IB=0 -25 V
Emitter-base breakdown voltage V(BR)EBO IE= -100 μA， IC=0 -5 V
Collector cut-off current I
CBO VCB= -40 V , I
E=0 -0.1 μA
Collector cut-off current I
CEO VCE= -20 V , I
B=0 -0.1 μA
Emitter cut-off current IEBO VEB= -5V , IC=0 -0.1 μA
hFE（1） VCE= -1V, I
C= -100mA 120 350
DC current gain hFE（2） VCE= -1V, I
C= -800mA 40
Collector-emitter saturation voltage VCE(sat) IC=-800 mA, IB= -80mA -0.5 V
Base-emitter saturation voltage VBE(sat) IC=-800 mA, IB= -80mA -1.2 V
Transition frequency f
T VCE= -10V, I
C= -50mA
f=30MHz 100 MHz
CLASSIFICATION OF hFE(1)
Ｒａｎｋ Ｌ Ｈ
Ｒａｎｇｅ １２０－２００ ２００－３５０
DEVICE MARKING
SS8550LT1=Y2
Unit : mm
SOT—23
1. BASE
2. EMITTER
3. COLLECTOR
SOT-23 PACKAGE OUTLINE DIMENSIONS
Symbol
A
A1
A2
b
c
D
E
E1
e
e1
L
L1
θ
Min
0.900
0.000
0.900
0.300
0.080
2.800
1.200
2.250
1.800
0.300
0°
Max
1.100
0.100
1.000
0.500
0.150
3.000
1.400
2.550
2.000
0.500
8°
Min
0.035
0.000
0.035
0.012
0.003
0.110
0.047
0.089
0.071
0.012
0°
Max
0.043
0.004
0.039
0.020
0.006
0.118
0.055
0.100
0.079
0.020
8°
Dimensions In Millimeters Dimensions In Inches
0.037TPY
0.022REF
0.950TPY
0.550REF
D
E1
A1
A2
A
E
L1
L
b
e1
C
0.2
e
θ
