JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SOT--23 SS8550LT1 TRANSISTOR PNP 1. BASE 2. EMITTER 3. COLLECTOR FEATURES Power dissipation PCM : 0.3 WTamb=25 Collector current ICM : -1.5 A Collector-base voltage V(BR)CBO : -40 V Operating and storage junction temperature range T J T stg: -55 to +150 Unit : mm ELECTRICAL CHARACTERISTICSTamb=25 Parameter unless Symbol otherwise Test specified conditions Collector-base breakdown voltage V(BR)CBO Ic= -100 A Collector-emitter breakdown voltage V(BR)CEO Emitter-base breakdown voltage V(BR)EBO MIN IE=0 MAX UNIT -40 V Ic= -0.1mA IB=0 -25 V IE= -100 A IC=0 -5 V Collector cut-off current ICBO VCB= -40 V , IE=0 -0.1 A Collector cut-off current ICEO VCE= -20 V , IB=0 -0.1 A Emitter cut-off current IEBO VEB= -5V , -0.1 A IC=0 hFE1 VCE= -1V, IC= -100mA 120 hFE2 VCE= -1V, IC= -800mA 40 Collector-emitter saturation voltage VCE(sat) IC=-800 mA, IB= -80m A -0.5 V Base-emitter saturation voltage VBE(sat) IC=-800 m A, IB= -80m A -1.2 V 350 DC current gain fT Transition frequency VCE= -10V, IC= -50mA 100 f=30MHz CLASSIFICATION OF h FE(1) DEVICE MARKING SS8550LT1=Y2 MHz SOT-23 PACKAGE OUTLINE DIMENSIONS D b L E E1 L1 0.2 e C Symbol A A1 A2 e1 Dimensions In Millimeters Dimensions In Inches Min Max Min Max A 0.900 1.100 0.035 0.043 A1 0.000 0.100 0.000 0.004 A2 0.900 1.000 0.035 0.039 b 0.300 0.500 0.012 0.020 c 0.080 0.150 0.003 0.006 D 2.800 3.000 0.110 0.118 E 1.200 1.400 0.047 0.055 E1 2.250 2.550 0.089 e e1 1.800 L 0.100 0.037TPY 0.950TPY 2.000 0.071 0.550REF 0.079 0.022REF L1 0.300 0.500 0.012 0.020 0 8 0 8