SMBT3906...MMBT3906 PNP Silicon Switching Transistors * High DC current gain: 0.1 mA to 100 mA * Low collector-emitter saturation voltage * For SMBT3906S and SMBT3906U: Two (galvanic) internal isolated transistor with good matching in one package * Complementary types: SMBT3904...MMBT3904 (NPN) * SMBT3906S/ U: for orientation in reel see package information below * Pb-free (RoHS compliant) package * Qualified according AEC Q101 Type Marking Pin Configuration SMBT3906/ MMBT3906 s2A 1=B SMBT3906S s2A 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363 SMBT3906U s2A 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74 2=E 3=C - - Package - SOT23 Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO 40 Collector-base voltage VCBO 40 Emitter-base voltage VEBO 6 Collector current IC Total power dissipation- Ptot Value 200 330 TS 115C, SOT363, MMBT3906S 250 TS 107C, SC74, MMBT3906U 330 Tj Storage temperature Tstg 1 V mA mW TS 71C, SOT23, MMBT3906 Junction temperature Unit 150 C -65 ... 150 2012-08-21 SMBT3906...MMBT3906 Thermal Resistance Parameter Junction - soldering point1) Symbol RthJS Value SMBT3906/ MMBT3906 240 SMBT3906S 140 SMBT3906U 130 Unit mW 1For calculation of R thJA please refer to Application Note AN077 (Thermal Resistance Calculation) Electrical Characteristics at TA = 25C, unless otherwise specified Parameter Symbol Values min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO 40 Unit V IC = 1 mA, IB = 0 Collector-base breakdown voltage V(BR)CBO 40 - - V(BR)EBO 6 - - ICBO - - 50 IC = 10 A, IE = 0 Emitter-base breakdown voltage IE = 10 A, IC = 0 Collector-base cutoff current nA VCB = 30 V, IE = 0 DC current gain1) - hFE IC = 100 A, VCE = 1 V 60 - - IC = 1 mA, VCE = 1 V 80 - - IC = 10 mA, VCE = 1 V 100 - 300 IC = 50 mA, VCE = 1 V 60 - - IC = 100 mA, VCE = 1 V 30 - - Collector-emitter saturation voltage1) V VCEsat IC = 10 mA, IB = 1 mA - - 0.25 IC = 50 mA, IB = 5 mA - - 0.4 IC = 10 mA, IB = 1 mA 0.65 - 0.85 IC = 50 mA, IB = 5 mA - - 0.95 Base emitter saturation voltage1) 1Pulse VBEsat test: t < 300s; D < 2% 2 2012-08-21 SMBT3906...MMBT3906 Electrical Characteristics at TA = 25C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. 250 - - Ccb - - 3.5 Ceb - - 10 td - - 35 tr - - 35 tstg - - 225 tf - - 75 F - - 4 AC Characteristics Transition frequency fT MHz IC = 10 mA, VCE = 20 V, f = 100 MHz Collector-base capacitance pF VCB = 5 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Delay time ns VCC = 3 V, IC = 10 mA, IB1 = 1 mA, VBE(off) = 0.5 V Rise time VCC = 3 V, IC = 10 mA, IB1 = 1 mA, VBE(off) = 0.5 V Storage time VCC = 3 V, IC = 10 mA, IB1 = IB2 = 1 mA Fall time VCC = 3 V, IC = 10 mA, IB1 = IB2 = 1 mA Noise figure dB IC = 100 A, VCE = 5 V, f = 1 kHz, f = 200 Hz, RS = 1 k 3 2012-08-21 SMBT3906...MMBT3906 Test circuit Delay and rise time -3.0 V 275 <1.0 ns +0.5 V 10 k 0 C <4.0 pF -10.6 V D = 2% 300 ns EHN00059 Storage and fall time -3.0 V <1.0 ns 275 +9.1 V 0 t1 -10.9 V 10 < t 1< 500 s D = 2% 10 k C 1N916 <4.0 pF EHN00060 4 2012-08-21 SMBT3906...MMBT3906 DC current gain hFE = (IC) Saturation voltage IC = (VBEsat ; VCEsat) VCE = 1 V hFE = 10 10 3 EHP00767 2 mA C 125 C 10 2 5 hFE 25 C V BE V CE -55 C 10 2 10 1 5 10 1 -5 10 10 -4 10 -3 10 -2 10 -1 mA10 10 0 0 0 0.2 0.4 0.6 IC 0.8 1.0 V 1.2 V BE sat , V CE sat Collector-base capacitance Ccb = (VCB) Total power dissipation P tot = (TS) Emitter-base capacitance Ceb = (VEB) SMBT3906 360 8 mW pF 300 6.5 270 6 Ptot VCB/VEB 7 5.5 240 5 210 4.5 180 4 150 3.5 120 3 90 CEB 2.5 60 2 1.5 1 0 30 CCB 4 8 12 16 V 0 0 22 CCB/CEB 5 15 30 45 60 75 90 105 120 C 150 TS 2012-08-21 SMBT3906...MMBT3906 Total power dissipation P tot = (TS) Total power dissipation P tot = (TS) SMBT3906U SMBT3906S 360 300 mW 300 250 270 225 240 200 Ptot Ptot mW 210 175 180 150 150 125 120 100 90 75 60 50 30 25 0 0 15 30 45 60 75 90 105 120 0 0 C 150 TS 15 30 45 60 75 90 105 120 C 150 TS Permissible Pulse Load RthJS = (tp) Permissible Pulse Load SMBT3906 Ptotmax/PtotDC = (tp ) SMBT3906 10 3 EHP00936 10 3 Ptot max 5 Ptot DC K/W D= tp T tp T RthJS 10 2 10 2 D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 5 10 1 D=0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 10 0 10 -1 -6 10 10 -5 10 -4 10 -3 10 1 5 10 -2 s 10 10 0 10 -6 0 tp 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 6 2012-08-21 SMBT3906...MMBT3906 Permissible Puls Load RthJS = (t p) Permissible Pulse Load SMBT3906U Ptotmax/PtotDC = (tp ) SMBT3906U 10 10 2 3 Ptotmax /PtotDC RthJS K/W 10 2 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 D=0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 10 1 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 10 0 -6 10 0 10 -5 10 -4 10 -3 10 -2 tp s 10 0 10 0 tp Permissible Pulse Load RthJS = (tp) Permissible Pulse Load SMBT3906S Ptotmax/PtotDC = (tp ) SMBT3906S 10 3 10 3 Ptotmax/PtotDC K/W RthJS 10 2 - D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 0 10 -1 -6 10 10 -5 10 -4 10 -3 10 10 1 -2 s 10 10 0 -6 10 0 tp 10 -5 10 -4 10 -3 10 -2 s tp 7 2012-08-21 SMBT3906...MMBT3906 Delay time td = (IC) Rise time tr = (IC) Storage time tstg = (IC) EHP00772 10 3 EHP00762 10 3 ns ns ts tr td t r ,t d 25 C 125 C h FE = 10 10 2 h FE = 20 10 10 2 VCC = 3 V h FE = 20 10 15 V 40 V 10 1 10 1 V BE = 2 V 0V 10 0 0 10 5 10 1 10 0 0 10 5 10 2 mA 5 10 3 5 10 1 5 10 2 mA 10 3 C C Rise time tr = (I C) Fall time tf = (IC) EHP00773 10 3 ns 25 C 125 C ns EHP00764 10 3 tr tf 25 C VCC = 40 V 10 2 10 2 VCC = 40 V h FE = 10 125 C h FE = 20 10 1 10 0 0 10 h FE = 10 5 10 1 10 1 10 0 0 10 5 10 2 mA 5 10 3 5 10 1 5 10 2 mA 10 3 C C 8 2012-08-21 Package SC74 SMBT3906...MMBT3906 Package Outline B 1.1 MAX. 1 2 3 0.35 +0.1 -0.05 Pin 1 marking 0.2 B 6x M A 0.1 MAX. 0.95 0.2 1.9 1.6 0.1 4 10 MAX. 5 2.5 0.1 6 0.25 0.1 0.15 +0.1 -0.06 (0.35) 10 MAX. 2.9 0.2 (2.25) M A Foot Print 2.9 1.9 0.5 0.95 Marking Layout (Example) Small variations in positioning of Date code, Type code and Manufacture are possible. Manufacturer 2005, June Date code (Year/Month) Pin 1 marking Laser marking BCW66H Type code Standard Packing Reel o180 mm = 3.000 Pieces/Reel Reel o330 mm = 10.000 Pieces/Reel For symmetric types no defined Pin 1 orientation in reel. 0.2 2.7 8 4 Pin 1 marking 3.15 1.15 9 2012-08-21 Package SOT23 SMBT3906...MMBT3906 0.4 +0.1 -0.05 1) 2 0.08...0.1 C 0.95 1.3 0.1 1 2.4 0.15 3 0.1 MAX. 10 MAX. B 1 0.1 10 MAX. 2.9 0.1 0.15 MIN. Package Outline A 5 0...8 1.9 0.2 0.25 M B C M A 1) Lead width can be 0.6 max. in dambar area Foot Print 0.8 0.9 1.3 0.9 0.8 1.2 Marking Layout (Example) Manufacturer EH s 2005, June Date code (YM) Pin 1 BCW66 Type code Standard Packing Reel o180 mm = 3.000 Pieces/Reel Reel o330 mm = 10.000 Pieces/Reel 4 0.2 8 2.13 2.65 0.9 Pin 1 1.15 3.15 10 2012-08-21 Package SOT363 SMBT3906...MMBT3906 Package Outline 2 0.2 0.9 0.1 +0.1 6x 0.2 -0.05 0.1 0.1 MAX. M 0.1 Pin 1 marking 1 2 3 A 1.25 0.1 4 0.1 MIN. 5 2.1 0.1 6 0.15 +0.1 -0.05 0.65 0.65 0.2 M A Foot Print 1.6 0.9 0.7 0.3 0.65 0.65 Marking Layout (Example) Small variations in positioning of Date code, Type code and Manufacture are possible. Manufacturer 2005, June Date code (Year/Month) Pin 1 marking Laser marking BCR108S Type code Standard Packing Reel o180 mm = 3.000 Pieces/Reel Reel o330 mm = 10.000 Pieces/Reel For symmetric types no defined Pin 1 orientation in reel. 0.2 2.3 8 4 Pin 1 marking 1.1 2.15 11 2012-08-21 SMBT3906...MMBT3906 Edition 2009-11-16 Published by Infineon Technologies AG 81726 Munich, Germany 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (<www.infineon.com>). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 12 2012-08-21