Supertex inc.
Supertex inc. ● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com
VN0106
Features
►Free from secondary breakdown
►Low power drive requirement
►Ease of paralleling
►Low CISS and fast switching speeds
►Excellent thermal stability
►Integral source-drain diode
►High input impedance and high gain
Applications
►Motor controls
►Converters
►Ampliers
►Switches
►Power supply circuits
►Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
General Description
This enhancement-mode (normally-off) transistor utilizes a
vertical DMOS structure and Supertex’s well-proven, silicon-
gate manufacturing process. This combination produces a
device with the power handling capabilities of bipolar transistors
and the high input impedance and positive temperature
coefcient inherent in MOS devices. Characteristic of all
MOS structures, this device is free from thermal runaway and
thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide
range of switching and amplifying applications where very
low threshold voltage, high breakdown voltage, high input
impedance, low input capacitance, and fast switching speeds
are desired.
N-Channel Enhancement-Mode
Vertical DMOS FET
Absolute Maximum Ratings
Parameter Value
Drain-to-source voltage BVDSS
Drain-to-gate voltage BVDGS
Gate-to-source voltage ±20V
Operating and storage temperature -55OC to +150OC
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
Pin Conguration
TO-92 (N3)
GATE
SOURCE
DRAIN
YY = Year Sealed
WW = Week Sealed
= “Green” Packaging
SiVN
0106
YYWW
TO-92 (N3)
Product Marking
Package may or may not include the following marks: Si or
Ordering Information
Device
Package Wafer / Die Options
TO-92 NW
(Die in wafer form)
NJ
(Die on adhesive tape)
ND
(Die in wafe pack)
VN0106 VN0106N3-G VN1506NW VN1506NJ VN1506ND
For packaged products, -G indicates package is RoHS compliant (‘Green’). Devices in Wafer / Die form are RoHS compliant (‘Green’).
Refer to Die Specication VF15 for layout and dimensions.
Product Summary
BVDSS/BVDGS
(V)
RDS(ON)
(max)
(Ω)
ID(ON)
(min)
(A)
60 3.0 2.0