Supertex inc.
Supertex inc. 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com
VN0106
Features
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low CISS and fast switching speeds
Excellent thermal stability
Integral source-drain diode
High input impedance and high gain
Applications
Motor controls
Converters
Ampliers
Switches
Power supply circuits
Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
General Description
This enhancement-mode (normally-off) transistor utilizes a
vertical DMOS structure and Supertex’s well-proven, silicon-
gate manufacturing process. This combination produces a
device with the power handling capabilities of bipolar transistors
and the high input impedance and positive temperature
coefcient inherent in MOS devices. Characteristic of all
MOS structures, this device is free from thermal runaway and
thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide
range of switching and amplifying applications where very
low threshold voltage, high breakdown voltage, high input
impedance, low input capacitance, and fast switching speeds
are desired.
N-Channel Enhancement-Mode
Vertical DMOS FET
Absolute Maximum Ratings
Parameter Value
Drain-to-source voltage BVDSS
Drain-to-gate voltage BVDGS
Gate-to-source voltage ±20V
Operating and storage temperature -55OC to +150OC
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
Pin Conguration
TO-92 (N3)
GATE
SOURCE
DRAIN
YY = Year Sealed
WW = Week Sealed
= “Green” Packaging
SiVN
0106
YYWW
TO-92 (N3)
Product Marking
Package may or may not include the following marks: Si or
Ordering Information
Device
Package Wafer / Die Options
TO-92 NW
(Die in wafer form)
NJ
(Die on adhesive tape)
ND
(Die in wafe pack)
VN0106 VN0106N3-G VN1506NW VN1506NJ VN1506ND
For packaged products, -G indicates package is RoHS compliant (‘Green’). Devices in Wafer / Die form are RoHS compliant (‘Green’).
Refer to Die Specication VF15 for layout and dimensions.
Product Summary
BVDSS/BVDGS
(V)
RDS(ON)
(max)
(Ω)
ID(ON)
(min)
(A)
60 3.0 2.0
2
VN0106
Supertex inc. 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com
Electrical Characteristics (TA = 25OC unless otherwise specied)
Sym Parameter Min Typ Max Units Conditions
Notes:
† ID (continuous) is limited by max rated Tj .
Thermal Characteristics
Package
ID
(continuous)
(mA)
ID
(pulsed)
(A)
Power Dissipation
@TC = 25OC
(W)
θjc
(OC/W)
θja
(OC/W)
IDR
(mA)
IDRM
(A)
TO-92 350 2.0 1.0 125 170 350 2.0
Switching Waveforms and Test Circuit
90%
10%
90% 90%
10%
10%
Pulse
Generator
V
DD
R
L
OUTPUT
D.U.T.
t(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
r
INPUT
INPUT
OUTPUT
10V
VDD
R
GEN
0V
0V
t
f
BVDSS Drain-to-source breakdown voltage 60 - - V VGS = 0V, ID = 1.0mA
VGS(th) Gate threshold voltage 0.8 - 2.4 V VGS = VDS, ID= 1.0mA
ΔVGS(th) Change in VGS(th) with temperature - -3.8 -5.5 mV/OC VGS = VDS, ID= 1.0mA
IGSS Gate body leakage - - 100 nA VGS = ± 20V, VDS = 0V
IDSS Zero gate voltage drain current
- - 1.0
µA
VGS = 0V, VDS = Max Rating
- - 100 VDS = 0.8 Max Rating,
VGS = 0V, TA = 125°C
ID(ON) On-state drain current 0.5 1.0 - AVGS = 5.0V, VDS = 25V
2.0 2.5 - VGS = 10V, VDS = 25V
RDS(ON) Static drain-to-source on-state resistance - 3.0 5.0 ΩVGS = 5.0V, ID = 250mA
- 2.5 3.0 VGS = 10V, ID = 1.0A
ΔRDS(ON) Change in RDS(ON) with temperature - 0.70 1.0 %/OC VGS = 10V, ID = 1.0A
GFS Forward transductance 300 450 - mmho VDS = 25V, ID = 500mA
CISS Input capacitance - 55 65
pF
VGS = 0V,
VDS = 25V,
f = 1.0MHz
COSS Common source output capacitance - 20 25
CRSS Reverse transfer capacitance - 5.0 8.0
td(ON) Turn-on delay time - 3.0 5.0
ns
VDD = 25V,
ID = 1.0A,
RGEN = 25Ω
trRise time - 5.0 8.0
td(OFF) Turn-off delay time - 6.0 9.0
tfFall time - 5.0 8.0
VSD Diode forward voltage drop - 1.2 1.8 V VGS = 0V, ISD = 1.0A
trr Reverse recovery time - 400 - ns VGS = 0V, ISD = 1.0A
Notes:
1. All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
3
VN0106
Supertex inc. 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com
Typical Performance Curves
Thermal Response Characteristics
Thermal Resistance (normalized)
t
P
(seconds)
1.0
0.8
0.6
0.4
0.2
0
TO-92
PD = 1.0W
TC = 25OC
0.001 0.01 0.1 1.0 10
Output Characteristics
V
DS
(volts)
I
D
(amperes)
0 10 20 30 40 50
2.5
2.0
1.5
1.0
0.5
0
VGS = 10V
8.0V
6.0V
4.0V
S
aturation
C
haracteristics
V
DS
(volts)
0 2.0 4.0 6.0 8.0 10
2.5
2.0
1.5
1.0
0.5
0
I
D
(amperes)
Transconductance vs. Drain Current
G
FS
(siemens)
I
D
(amperes)
1.0
0.8
0.6
0.4
0.2
0
0 0.2 0.4 0.6 0.8 1.0
VDS = 25V
TA = -55OC
25OC
125OC
Power Dissipation vs. Case Temperature
T
C
(
O
C)
P
D
(watts)
2.0
1.0
0
0 25 50 75 100 125 150
TO-92
Maximum Rated Safe Operating Area
V
DS
(volts)
I
D
(amperes)
0.1 1.0 10 100
10
1.0
0.1
0.01
TO-92 (DC)
TC = 25OC
3.0V
5.0V
7.0V
9.0V
VGS = 10V
8.0V
6.0V
4.0V
3.0V
5.0V
7.0V
9.0V
4
VN0106
Supertex inc. 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com
Typical Performance Curves (cont.)
Gate Drive Dynamic Characteristics
Q
G
(nanocoulombs)
V
GS
(volts)
10
8
6
4
2
00 0.2 0.4 0.6 0.8 1.0
V
DS
= 10V
40 pF
40V
80 pF
-50 0 50 100 150
1.1
1.0
0.9
BVDSS Variation with Temperature
B
VDSS
(normalized)
T
j
(
O
C)
On-Resistance vs. Drain Current
R
DS(ON)
(Ω)
I
D
(amperes)
0 0.5 1.0 1.5 2.0 2.5
5.0
4.0
3.0
2.0
1.0
0
V
GS
= 5.0V
V
GS
= 10V
Transfer Characteristics
V
GS
(volts)
I
D
(amperes)
0 2 4 6 8 10
2.5
2.0
1.5
1.0
0.5
0
T
A
= -55
O
C
25
O
C
V
DS
= 25V
125
O
C
V
GS(th)
(normalized)
R
DS(ON)
(normalized)
V(th) and RDS Variation with Temperature
1.6
1.4
1.2
1.0
0.8
0.6
-50 0 50 100 150
V
(th)
@ 1.0mA
R
DS
@ 10V, 1.0A
1.9
1.6
1.3
1.0
0.7
0.4
T
j
(
O
C)
R
DS
@ 5.0V, 0.25A
Capacitance vs. Drain-to-Source Voltage
100
75
50
25
0
C (picofarads)
0 10 20 30 40
f = 1.0MHz
C
ISS
C
OSS
C
RSS
V
DS
(volts)
Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives
an adequate “product liability indemnification insurance agreement.” Supertex inc. does not assume responsibility for use of devices described, and limits its liability
to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and
specifications are subject to change without notice. For the latest product specifications refer to the Supertex inc. (website: http//www.supertex.com)
©2011 Supertex inc. All rights reserved. Unauthorized use or reproduction is prohibited.
Supertex inc.
1235 Bordeaux Drive, Sunnyvale, CA
94089
Tel: 408-222-8888
www
.supertex.com
5
VN0106
(The package drawing(s) in this data sheet may not reect the most current specications. For the latest package outline
information go to http://www.supertex.com/packaging.html.)
Doc.# DSFP-VN0106
B071411
3-Lead TO-92 Package Outline (N3)
Symbol A b c D E E1 e e1 L
Dimensions
(inches)
MIN .170 .014.014.175 .125 .080 .095 .045 .500
NOM - - - - - - - - -
MAX .210 .022.022.205 .165 .105 .105 .055 .610*
JEDEC Registration TO-92.
* This dimension is not specied in the JEDEC drawing.
† This dimension differs from the JEDEC drawing.
Drawings not to scale.
Supertex Doc.#: DSPD-3TO92N3, Version E041009.
Seating
Plane
1
2
3
Front View Side View
Bottom View
E1 E
D
e1
L
e
c
1 2 3
b
A