Supertex inc. VN0106 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Applications Supertex's vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral source-drain diode High input impedance and high gain This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex's well-proven, silicongate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Motor controls Converters Amplifiers Switches Power supply circuits Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) Ordering Information Package Device VN0106 Wafer / Die Options TO-92 NW (Die in wafer form) NJ (Die on adhesive tape) ND (Die in waffle pack) VN0106N3-G VN1506NW VN1506NJ VN1506ND For packaged products, -G indicates package is RoHS compliant (`Green'). Devices in Wafer / Die form are RoHS compliant (`Green'). Refer to Die Specification VF15 for layout and dimensions. Pin Configuration Product Summary RDS(ON) ID(ON) (V) (max) () (min) (A) 60 3.0 2.0 BVDSS/BVDGS DRAIN SOURCE Absolute Maximum Ratings Parameter Value Drain-to-source voltage BVDSS Drain-to-gate voltage BVDGS Gate-to-source voltage 20V Operating and storage temperature -55OC to +150OC Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground. GATE TO-92 (N3) Product Marking SiVN 0 1 0 6 YYWW YY = Year Sealed WW = Week Sealed = "Green" Packaging Package may or may not include the following marks: Si or TO-92 (N3) Supertex inc. 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com VN0106 Thermal Characteristics ID ID Package (continuous) (mA) (pulsed) (A) TO-92 350 2.0 Power Dissipation jc @TC = 25OC (W) ( C/W) 1.0 125 O ( C/W) IDR (mA) IDRM 170 350 2.0 O ja (A) Notes: ID (continuous) is limited by max rated Tj . Electrical Characteristics (T A Sym Parameter BVDSS VGS(th) VGS(th) IGSS = 25OC unless otherwise specified) Min Typ Max Units Drain-to-source breakdown voltage 60 - - V VGS = 0V, ID = 1.0mA Gate threshold voltage 0.8 - 2.4 V VGS = VDS, ID= 1.0mA Change in VGS(th) with temperature - -3.8 -5.5 Gate body leakage - - 100 - - 1.0 - - 100 0.5 1.0 - 2.0 2.5 - - 3.0 5.0 - 2.5 3.0 - 0.70 1.0 300 450 - IDSS Zero gate voltage drain current ID(ON) On-state drain current RDS(ON) RDS(ON) Static drain-to-source on-state resistance Change in RDS(ON) with temperature Forward transductance CISS Input capacitance - 55 65 COSS Common source output capacitance - 20 25 CRSS Reverse transfer capacitance - 5.0 8.0 td(ON) Turn-on delay time - 3.0 5.0 Rise time - 5.0 8.0 Turn-off delay time - 6.0 9.0 Fall time - 5.0 8.0 Diode forward voltage drop - 1.2 Reverse recovery time - 400 tr td(OFF) tf VSD trr mV/ C VGS = VDS, ID= 1.0mA O nA A A GFS Conditions %/ C O VGS = 20V, VDS = 0V VGS = 0V, VDS = Max Rating VDS = 0.8 Max Rating, VGS = 0V, TA = 125C VGS = 5.0V, VDS = 25V VGS = 10V, VDS = 25V VGS = 5.0V, ID = 250mA VGS = 10V, ID = 1.0A VGS = 10V, ID = 1.0A mmho VDS = 25V, ID = 500mA pF VGS = 0V, VDS = 25V, f = 1.0MHz ns VDD = 25V, ID = 1.0A, RGEN = 25 1.8 V VGS = 0V, ISD = 1.0A - ns VGS = 0V, ISD = 1.0A Notes: 1. All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit 10V VDD 90% Pulse Generator INPUT 0V 10% t(ON) td(ON) VDD OUTPUT t(OFF) tr Supertex inc. 90% OUTPUT RGEN tf 10% 10% 0V td(OFF) RL INPUT D.U.T. 90% 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com 2 VN0106 Typical Performance Curves Output Characteristics 2.5 Saturation Characteristics 2.5 VGS = 10V 9.0V VGS = 10V 8.0V 2.0 9.0V 2.0 8.0V 7.0V 1.5 6.0V 1.0 5.0V 0.5 4.0V ID (amperes) ID (amperes) 7.0V 1.5 6.0V 1.0 5.0V 0.5 4.0V 3.0V 0 0 10 20 30 40 3.0V 0 50 0 2.0 4.0 Transconductance vs. Drain Current 1.0 6.0 8.0 10 VDS (volts) VDS (volts) 2.0 VDS = 25V Power Dissipation vs. Case Temperature 0.6 PD (watts) GFS (siemens) 0.8 TA = -55OC 25OC 0.4 125OC 1.0 TO-92 0.2 0 0 0.2 0.4 0.6 0.8 0 1.0 0 25 50 ID (amperes) Maximum Rated Safe Operating Area 1.0 Thermal Resistance (normalized) 10 ID (amperes) 1.0 TO-92 (DC) 0.1 0.01 0.1 TC = 25OC 1.0 10 VDS (volts) Supertex inc. 75 100 125 150 TC (OC) 100 Thermal Response Characteristics 0.8 0.6 0.4 0.2 0 0.001 TO-92 PD = 1.0W TC = 25OC 0.01 0.1 1.0 10 tP (seconds) 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com 3 VN0106 Typical Performance Curves (cont.) BVDSS Variation with Temperature On-Resistance vs. Drain Current 5.0 1.1 VGS = 5.0V RDS(ON) () BVDSS (normalized) 4.0 1.0 VGS = 10V 3.0 2.0 1.0 0.9 0 50 100 0 150 0 0.5 1.0 Transfer Characteristics 2.5 1.5 2.0 2.5 ID (amperes) Tj (OC) 1.6 V(th) and RDS Variation with Temperature VDS = 25V 1.6 1.4 TA = -55OC VGS(th) (normalized) ID (amperes) 2.0 25OC 1.5 125OC 1.0 1.9 RDS @ 10V, 1.0A 1.3 1.2 V(th) @ 1.0mA RDS @ 5.0V, 0.25A 1.0 1.0 0.7 0.8 0.5 0.4 0 0 2 4 6 8 0.6 -50 10 0 50 VGS (volts) Capacitance vs. Drain-to-Source Voltage 100 150 Gate Drive Dynamic Characteristics 10 f = 1.0MHz VDS = 10V 8 75 40V VGS (volts) C (picofarads) 100 Tj (OC) 50 CISS 6 80 pF 4 25 2 COSS 0 40 pF CRSS 0 10 20 30 VDS (volts) Supertex inc. 40 0 0 0.2 0.4 0.6 0.8 1.0 QG (nanocoulombs) 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com 4 RDS(ON) (normalized) -50 VN0106 3-Lead TO-92 Package Outline (N3) D A Seating Plane 1 2 3 L b e1 e c Side View Front View E1 E 3 1 2 Bottom View Symbol Dimensions (inches) A b c D E E1 e e1 L MIN .170 .014 .014 .175 .125 .080 .095 .045 .500 NOM - - - - - - - - - MAX .210 .022 .022 .205 .165 .105 .105 .055 .610* JEDEC Registration TO-92. * This dimension is not specified in the JEDEC drawing. This dimension differs from the JEDEC drawing. Drawings not to scale. Supertex Doc.#: DSPD-3TO92N3, Version E041009. (The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information go to http://www.supertex.com/packaging.html.) Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives an adequate "product liability indemnification insurance agreement." Supertex inc. does not assume responsibility for use of devices described, and limits its liability to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications refer to the Supertex inc. (website: http//www.supertex.com) Supertex inc. (c)2011 Supertex inc. All rights reserved. Unauthorized use or reproduction is prohibited. Doc.# DSFP-VN0106 B071411 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com 5