January 2011
©2011 Fairchild Semiconductor Corporation
FDMC7660DC Rev.C3 www.fairchildsemi.com
1
FDMC7660DC N-Channel Dual CoolTM PowerTrench® MOSFET
FDMC7660DC
N-Channel Dual CoolTM PowerTrench® MOSFET
30 V, 40 A, 2.2 mΩ
Features
Dual CoolTM Top Side Cooling PQFN package
Max rDS(on) = 2.2 mΩ at VGS = 10 V, ID = 22 A
Max rDS(on) = 3.3 mΩ at VGS = 4.5 V, ID = 18 A
High performance technology for extremely low rDS(on)
SyncFET Schottky Body Diode
RoHS Compliant
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench® process.
Advancements in both silicon and Dual CoolTM package
technologies have been combined to offer the lowest rDS(on)
while maintaining excellent switching performance by extremely
low Junction-to-Ambient thermal resistance.
Applications
Synchronous Rectifier for DC/DC Converters
Telecom Secondary Side Rectification
High End Server/Workstation
MOSFET Maximum Ratings TA= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Ratings Units
VDS Drain to Source Voltage 30 V
VGS Gate to Source Volt age (Note 4) ±20 V
ID
Drain Current -Continuous (Package limited) TC = 25 °C 40
A
-Continuous (Silicon limited) TC = 25 °C 150
-Continuous TA = 25 °C (Note 1a) 30
-Pulsed 200
EAS Single Pulse Avalanche Energy (Note 3) 220 mJ
dv/dt Peak Diode Recovery dv/dt (Note 5) 1.0 V/ns
PDPower Dissipation TC = 25 °C 78 W
Power Dissipation TA = 25 °C (Note 1a) 3.0
TJ, TSTG Operating and Storage Junction Temperature Range -55 to + 150 °C
RθJC Thermal Resistance, Junction to Case (Top Source) 4.3
°C/W
RθJC Thermal Resistance, Junction to Case (Bottom Drain) 1.6
RθJA Thermal Resistance, Junction to Ambient (Note 1a) 42
RθJA Thermal Resistance, Junction to Ambient (Note 1b) 105
RθJA Thermal Resistance, Junction to Ambient (Note 1i) 17
RθJA Thermal Resistance, Junction to Ambient (Note 1j) 26
RθJA Thermal Resistance, Junction to Ambient (Note 1k) 12
Device Marking Device Package Reel Size Tape Width Quantity
7660 FDMC7660DC Dual CoolTM Power 33 13’’ 12 mm 3000 units
Top Power 33 Bottom
D
D
D
D
G
S
S
S
Pin 1
G
S
S
S
D
D
D
D
5
6
7
8
3
2
1
4
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©2011 Fairchild Semiconductor Corporation
FDMC7660DC Rev.C3
FDMC7660DC N-Channel Dual CoolTM PowerTrench® MOSFET
Electrical Characteristics TJ = 25°C unless otherwise noted
Off Characteristic s
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Symbol Parameter Test Conditions Min Typ Max Units
BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V30 V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient ID = 250 μA, referenced to 25 °C 15 mV/°C
IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V1μA
IGSS Gate to Source Leakage Current, Forward VGS = 20 V, VDS = 0 V 100nA
VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA 1.2 2 2.5 V
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient ID = 250 μA, referenced to 25 °C -7 mV/°C
rDS(on) Static Drain to Source On Resistance VGS = 10 V, ID = 22 A 1.62.2
mΩVGS = 4.5 V, ID = 18 A2.53.3
VGS = 10 V, ID = 22 A, TJ = 125°C 2.2 3.3
gFS Forward Transconductance VDS = 5 V, ID = 22 A 147 S
Ciss Input Capacitance VDS = 15 V, VGS = 0 V,
f = 1MHz
3885 5170 pF
Coss Output Capacitance 1215 1620 pF
Crss Reverse Transfer Capacitance 100 150 pF
RgGate Resistance 0.7 1.5 Ω
td(on) Turn-On Delay Time VDD = 15 V, ID = 22 A,
VGS = 10 V, RGEN = 6 Ω
17 31 ns
trRise Time 6.6 13 ns
td(off) Turn-Off Delay Time 36 58 ns
tfFall Time 510ns
QgTotal Gate Charge VGS = 0 V to 10 VVDD = 15 V,
ID = 22 A
54 76 nC
QgTotal Gate Charge VGS = 0 V to 4.5 V2434nC
Qgs Gate to Source Charge 13 nC
Qgd Gate to Drain “Miller” Charge 5.5 nC
VSD Source-Drain Diode Forward Voltage VGS = 0 V, IS = 22 A (Note 2) 0.8 1.2 V
VGS = 0 V, IS = 1.9 A (Note 2) 0.7 1.2
trr Reverse Recovery Time IF = 22 A, di/dt = 100 A/μs 43 69 ns
Qrr Reverse Recovery Charge 24 38 nC
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©2011 Fairchild Semiconductor Corporation
FDMC7660DC Rev.C3
FDMC7660DC N-Channel Dual CoolTM PowerTrench® MOSFET
Thermal Characteristics
RθJC Thermal Resistance, Junction to Case (Top Source) 4.3
°C/W
RθJC Thermal Resistance, Junction to Case (Bottom Drain) 1.6
RθJA Thermal Resistance, Junction to Ambient (Note 1a) 42
RθJA Thermal Resistance, Junction to Ambient (Note 1b) 105
RθJA Thermal Resistance, Junction to Ambient (Note 1c) 29
RθJA Thermal Resistance, Junction to Ambient (Note 1d) 40
RθJA Thermal Resistance, Junction to Ambient (Note 1e) 19
RθJA Thermal Resistance, Junction to Ambient (Note 1f) 23
RθJA Thermal Resistance, Junction to Ambient (Note 1g) 30
RθJA Thermal Resistance, Junction to Ambient (Note 1h) 79
RθJA Thermal Resistance, Junction to Ambient (Note 1i) 17
RθJA Thermal Resistance, Junction to Ambient (Note 1j) 26
RθJA Thermal Resistance, Junction to Ambient (Note 1k) 12
RθJA Thermal Resistance, Junction to Ambient (Note 1l) 16
NOTES:
1. RθJA is determined with the device mounted on a FR-4 board using a specified pad of 2 oz copper as shown below. RθJC is guaranteed by design while RθCA is determined
by the user's board design.
c. Still air, 20.9x10.4x12.7mm Aluminum Heat Sink, 1 in2 pad of 2 oz copper
d. Still air, 20.9x10.4x12.7mm Aluminum Heat Sink, minimum pad of 2 oz copper
e. Still air, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, 1 in2 pad of 2 oz copper
f. Still air, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, minimum pad of 2 oz copper
g. 200FPM Airflow, No Heat Sink,1 in2 pad of 2 oz copper
h. 200FPM Airflow, No Heat Sink, minimum pad of 2 oz copper
i. 200FPM Airflow, 20.9x10.4x12.7mm Aluminum Heat Sink, 1 in2 pad of 2 oz copper
j. 200FPM Airflow, 20.9x10.4x12.7mm Aluminum Heat Sink, minimum pad of 2 oz copper
k. 200FPM Airflow, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, 1 in2 pad of 2 oz copper
l. 200FPM Airflow, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, minimum pad of 2 oz copper
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. EAS of 220 mJ is based on starting TJ = 25 oC; N-ch: L = 1 mH, IAS = 21 A, VDD = 27 V, VGS = 10 V. 100% test at L = 0.3 mH, IAS = 33.5 A.
4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse ocurrence only. No continuous rating is implied.
5. ISD ≤ 22 A, di/dt ≤ 100 A/μs, VDD ≤ BVDSS, Starting TJ = 25 oC.
a. 42 °C/W when mounted on
a 1 in2 pad of 2 oz copper b. 105 °C/W when mounted on
a minimum pad of 2 oz copper
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©2011 Fairchild Semiconductor Corporation
FDMC7660DC Rev.C3
FDMC7660DC N-Channel Dual CoolTM PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
Figure 1.
0.00.20.40.60.81.0
0
50
100
150
200
VGS = 6 V
VGS = 4.5 V
VGS = 8 V
VGS = 4 V
PULSE D U R ATION = 80 μs
DUTY CYCLE = 0.5% MAX
VGS = 10 V
ID, DRAIN CURRENT (A)
VDS, DRAIN TO SOURCE VOLTAGE (V)
On Region Characteristics Figure 2.
0 50 100 150 200
0
1
2
3
4
VGS = 8 V
PULSE D U R ATION = 80 μs
DUTY CYCLE = 0.5% MAX
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
ID, DRAIN CURRENT (A)
VGS = 4 V
VGS = 4.5 V
VGS = 6 V
VGS = 10 V
Normalized On-Resistance
vs Drain Current and Gate Voltage
Figure 3. Normalized On Resistance
-75 -50 -25 0 25 50 75 100 125 150
0.8
1.0
1.2
1.4
1.6
ID = 22 A
VGS = 10 V
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
TJ, JUNCTION TEMPER ATURE (oC)
vs Junction Te mperature Figure 4.
246810
0
5
10
15
TJ = 125oC
ID = 22 A
TJ = 25 oC
VGS, GATE TO SO URCE V O L TAGE (V)
rDS(on), DRAIN TO
SOURCE ON-RESISTANCE (mΩ)
PULSE D U R ATION = 80 μs
DUTY CYCLE = 0.5% MAX
On-Resistance vs Gate to
Source Voltage
Figure 5. Transfer Characteristics
2.02.53.03.54.04.5
0
50
100
150
200
TJ = 150 oC
VDS = 3 V
PULSE DU R ATION = 80 μs
DUTY CYCLE = 0.5% MAX
TJ = -55 oC
TJ = 25 oC
ID, DRAIN CURRENT (A)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 6.
0.2 0.4 0.6 0.8 1.0 1.2
0.1
1
10
100
TJ = -55 oC
TJ = 25 oC
TJ = 150 oC
VGS = 0 V
IS, REVERSE DRAIN CURRENT (A)
VSD, BODY DIODE FORWARD VOLTAGE (V)
500
Source to Drain Diode
Forward Voltage vs Source Current
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©2011 Fairchild Semiconductor Corporation
FDMC7660DC Rev.C3
FDMC7660DC N-Channel Dual CoolTM PowerTrench® MOSFET
Figure 7.
0 102030405060
0
2
4
6
8
10 ID = 22 A
VDD = 20 V
VDD = 10 V
VGS, GATE TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
VDD = 15 V
Gate Charge Characteristics Figure 8.
0.1 1 10
50
100
1000
6000
f = 1 MHz
VGS = 0 V
CAPACITANCE (pF)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Crss
Coss
Ciss
30
Capacitance vs Drain
to Source Voltage
Figure 9.
0.01 0.1 1 10 100 300
1
10
30
TJ = 100 oC
TJ = 25 oC
TJ = 125 oC
tAV, TIME IN AVALANCHE (ms)
IAS, AVALANCHE CURRENT (A)
Unc l amp e d Ind u ctiv e
Switching Capability Figure 10.
25 50 75 100 125 150
0
40
80
120
160
Limited by Package
VGS = 4.5 V
RθJC = 1.6 oC/W
VGS = 10 V
ID, DRAIN CURRENT (A)
TC, CASE TEMPERATURE (oC)
Maximum Continuous Drain
Current vs Case Temperature
Figure 11. Forward Bias Safe
Operating Area
0.01 0.1 1 10 100
0.01
0.1
1
10
100
500
100 us
DC
100 ms
10 ms
1 ms
1s
ID, DRAIN CURRENT (A)
VDS, DRAIN to SO U R CE VOLTAG E (V)
TH IS AREA IS
LIMITED BY rDS(on)
SINGLE PULSE
TJ = MAX RA TED
RθJA = 105 oC/W
TA = 25 oC
10s
Figure 12.
10-4 10-3 10-2 10-1 110
100 1000
0.2
1
10
102
103
104
SINGLE PULSE
RθJA = 105 oC/W
TA = 25 oC
P(PK), PEAK TRANSIENT POWER (W)
t, PULSE WIDTH (sec)
Single Pulse Maximum
Power Dissipation
Typical Characteristics TJ = 25°C unless otherwise noted
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©2011 Fairchild Semiconductor Corporation
FDMC7660DC Rev.C3
FDMC7660DC N-Channel Dual CoolTM PowerTrench® MOSFET
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
10-4 10-3 10-2 10-1 110
100 1000
0.0001
0.001
0.01
0.1
1
SINGLE PULSE
RθJA = 105 oC/W
DUTY CYCLE-DESCENDING ORDER
NORMALIZED THERMAL
IMPEDANCE, ZθJA
t, RECTANGU LAR PULSE DUR A TION (sec)
D = 0.5
0.2
0.1
0.0 5
0.0 2
0.0 1
2
PDM
t1t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
Typical Characteristics TJ = 25°C unless otherwise noted
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©2011 Fairchild Semiconductor Corporation
FDMC7660DC Rev.C3
FDMC7660DC N-Channel Dual CoolTM PowerTrench® MOSFET
Dimensional Outline and Pad Layout
FDMC7660DC N-Channel Dual CoolTM PowerTrench® MOSFET
©2011 Fairchild Semiconductor Corporation 8 www.fairchildsemi.com
FDMC7660DC Rev.C3
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Definition of Terms
AccuPower™
Auto-SPM™
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
DEUXPEED®
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®
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PowerTrench®
PowerXS™
Programmable Active Droop™
QFET®
QS™
Quiet Series™
RapidConfigure™
Saving our world, 1mW/W/ kW at a time™
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SuperFET®
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
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®*
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®
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TriFault Detect™
TRUECURRENT™*
μSerDes™
UHC®
Ultra FRFET™
UniFET™
VCX™
VisualMax™
XS™
tm
®
tm
tm
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Rev. I51
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