N-Channel Dual CoolTM PowerTrench(R) MOSFET 30 V, 40 A, 2.2 m Features Dual CoolTM General Description Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench(R) process. Advancements in both silicon and Dual CoolTM package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance. Max rDS(on) = 2.2 m at VGS = 10 V, ID = 22 A Max rDS(on) = 3.3 m at VGS = 4.5 V, ID = 18 A High performance technology for extremely low rDS(on) SyncFET Schottky Body Diode Applications RoHS Compliant Synchronous Rectifier for DC/DC Converters Telecom Secondary Side Rectification High End Server/Workstation Pin 1 S S S G D Top Power 33 D D D D 5 4 G D 6 3 S D 7 2 S D 8 1 S Bottom MOSFET Maximum Ratings TA= 25C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage (Note 4) Drain Current -Continuous (Package limited) ID TC = 25 C -Continuous (Silicon limited) TC = 25 C -Continuous TA = 25 C Ratings 30 Units V 20 V 40 150 (Note 1a) 30 -Pulsed A 200 EAS Single Pulse Avalanche Energy (Note 3) 220 mJ dv/dt Peak Diode Recovery dv/dt (Note 5) 1.0 V/ns (Note 1a) 3.0 PD TJ, TSTG Power Dissipation TC = 25 C Power Dissipation TA = 25 C 78 Operating and Storage Junction Temperature Range -55 to + 150 W C Thermal Characteristics RJC Thermal Resistance, Junction to Case (Top Source) 4.3 RJC Thermal Resistance, Junction to Case (Bottom Drain) 1.6 RJA Thermal Resistance, Junction to Ambient (Note 1a) 42 RJA Thermal Resistance, Junction to Ambient (Note 1b) 105 RJA Thermal Resistance, Junction to Ambient (Note 1i) 17 RJA Thermal Resistance, Junction to Ambient (Note 1j) 26 RJA Thermal Resistance, Junction to Ambient (Note 1k) 12 C/W Package Marking and Ordering Information Device Marking 7660 Device FDMC7660DC (c)2011 Fairchild Semiconductor Corporation FDMC7660DC Rev.C3 Package Dual CoolTM Power 33 1 Reel Size 13'' Tape Width 12 mm Quantity 3000 units www.fairchildsemi.com FDMC7660DC N-Channel Dual CoolTM PowerTrench(R) MOSFET January 2011 FDMC7660DC Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 A, VGS = 0 V BVDSS TJ Breakdown Voltage Temperature Coefficient ID = 250 A, referenced to 25 C IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1 A IGSS Gate to Source Leakage Current, Forward VGS = 20 V, VDS = 0 V 100 nA 2.5 V 30 V 15 mV/C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 A VGS(th) TJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250 A, referenced to 25 C rDS(on) Static Drain to Source On Resistance gFS Forward Transconductance 1.2 2 -7 mV/C VGS = 10 V, ID = 22 A 1.6 2.2 VGS = 4.5 V, ID = 18 A 2.5 3.3 VGS = 10 V, ID = 22 A, TJ = 125C 2.2 3.3 VDS = 5 V, ID = 22 A 147 m S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 15 V, VGS = 0 V, f = 1MHz 3885 5170 pF 1215 1620 pF 100 150 pF 0.7 1.5 ns Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time 17 31 VDD = 15 V, ID = 22 A, VGS = 10 V, RGEN = 6 6.6 13 ns 36 58 ns tf Fall Time 5 10 ns Qg Total Gate Charge VGS = 0 V to 10 V 54 76 nC VGS = 0 V to 4.5 V VDD = 15 V, ID = 22 A 24 34 13 nC 5.5 nC Qg Total Gate Charge Qgs Gate to Source Charge Qgd Gate to Drain "Miller" Charge nC Drain-Source Diode Characteristics VSD Source-Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge (c)2011 Fairchild Semiconductor Corporation FDMC7660DC Rev.C3 VGS = 0 V, IS = 22 A (Note 2) 0.8 1.2 VGS = 0 V, IS = 1.9 A (Note 2) 0.7 1.2 IF = 22 A, di/dt = 100 A/s 2 V 43 69 ns 24 38 nC www.fairchildsemi.com FDMC7660DC N-Channel Dual CoolTM PowerTrench(R) MOSFET Electrical Characteristics TJ = 25C unless otherwise noted RJC Thermal Resistance, Junction to Case (Top Source) 4.3 RJC Thermal Resistance, Junction to Case (Bottom Drain) 1.6 RJA Thermal Resistance, Junction to Ambient (Note 1a) 42 RJA Thermal Resistance, Junction to Ambient (Note 1b) 105 RJA Thermal Resistance, Junction to Ambient (Note 1c) 29 RJA Thermal Resistance, Junction to Ambient (Note 1d) 40 RJA Thermal Resistance, Junction to Ambient (Note 1e) 19 RJA Thermal Resistance, Junction to Ambient (Note 1f) 23 RJA Thermal Resistance, Junction to Ambient (Note 1g) 30 RJA Thermal Resistance, Junction to Ambient (Note 1h) 79 RJA Thermal Resistance, Junction to Ambient (Note 1i) 17 RJA Thermal Resistance, Junction to Ambient (Note 1j) 26 RJA Thermal Resistance, Junction to Ambient (Note 1k) 12 RJA Thermal Resistance, Junction to Ambient (Note 1l) 16 C/W NOTES: 1. RJA is determined with the device mounted on a FR-4 board using a specified pad of 2 oz copper as shown below. RJC is guaranteed by design while RCA is determined by the user's board design. b. 105 C/W when mounted on a minimum pad of 2 oz copper a. 42 C/W when mounted on a 1 in2 pad of 2 oz copper c. Still air, 20.9x10.4x12.7mm Aluminum Heat Sink, 1 in2 pad of 2 oz copper d. Still air, 20.9x10.4x12.7mm Aluminum Heat Sink, minimum pad of 2 oz copper e. Still air, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, 1 in2 pad of 2 oz copper f. Still air, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, minimum pad of 2 oz copper g. 200FPM Airflow, No Heat Sink,1 in2 pad of 2 oz copper h. 200FPM Airflow, No Heat Sink, minimum pad of 2 oz copper i. 200FPM Airflow, 20.9x10.4x12.7mm Aluminum Heat Sink, 1 in2 pad of 2 oz copper j. 200FPM Airflow, 20.9x10.4x12.7mm Aluminum Heat Sink, minimum pad of 2 oz copper k. 200FPM Airflow, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, 1 in2 pad of 2 oz copper l. 200FPM Airflow, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, minimum pad of 2 oz copper 2. Pulse Test: Pulse Width < 300 s, Duty cycle < 2.0%. 3. EAS of 220 mJ is based on starting TJ = 25 oC; N-ch: L = 1 mH, IAS = 21 A, VDD = 27 V, VGS = 10 V. 100% test at L = 0.3 mH, IAS = 33.5 A. 4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse ocurrence only. No continuous rating is implied. 5. ISD 22 A, di/dt 100 A/s, VDD BVDSS, Starting TJ = 25 oC. (c)2011 Fairchild Semiconductor Corporation FDMC7660DC Rev.C3 3 www.fairchildsemi.com FDMC7660DC N-Channel Dual CoolTM PowerTrench(R) MOSFET Thermal Characteristics 200 4 VGS = 6 V VGS = 8 V ID, DRAIN CURRENT (A) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = 10 V 150 VGS = 4.5 V 100 VGS = 4 V 50 PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 0 0.0 0.2 0.4 0.6 0.8 VGS = 4 V 3 VGS = 4.5 V 2 VGS = 6 V 1 0 1.0 0 Figure 1. On Region Characteristics 50 100 ID, DRAIN CURRENT (A) rDS(on), DRAIN TO 1.4 1.2 1.0 0.8 -75 -50 -25 0 25 50 75 SOURCE ON-RESISTANCE (m) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 200 15 ID = 22 A VGS = 10 V PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX ID = 22 A 10 5 TJ = 125oC TJ = 25 oC 0 100 125 150 2 4 TJ, JUNCTION TEMPERATURE (oC) IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX VDS = 3 V TJ = 150 oC 100 TJ = 25 oC 50 TJ = -55 oC 3.0 3.5 4.0 500 10 VGS = 0 V 100 TJ = 150 oC 10 TJ = 25 oC 1 TJ = -55 oC 0.1 0.2 4.5 0.4 0.6 0.8 1.0 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics (c)2011 Fairchild Semiconductor Corporation FDMC7660DC Rev.C3 8 Figure 4. On-Resistance vs Gate to Source Voltage 200 2.5 6 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On Resistance vs Junction Temperature ID, DRAIN CURRENT (A) 150 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 1.6 0 2.0 VGS = 10 V VGS = 8 V VDS, DRAIN TO SOURCE VOLTAGE (V) 150 PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX Figure 6. Source to Drain Diode Forward Voltage vs Source Current 4 www.fairchildsemi.com FDMC7660DC N-Channel Dual CoolTM PowerTrench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted 6000 ID = 22 A Ciss 8 VDD = 10 V CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 6 VDD = 15 V VDD = 20 V 4 2 1000 100 10 20 30 40 50 f = 1 MHz VGS = 0 V Crss 50 0.1 0 0 Coss 60 1 10 Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 160 30 o ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A) VGS = 10 V TJ = 25 oC 10 TJ = 100 oC TJ = 125 oC RJC = 1.6 C/W 120 VGS = 4.5 V 80 40 Limited by Package 1 0.01 0.1 1 10 0 25 100 300 50 100 125 150 o Figure 9. Unclamped Inductive Switching Capability Figure 10. Maximum Continuous Drain Current vs Case Temperature 4 500 P(PK), PEAK TRANSIENT POWER (W) 10 100 100 us 10 1 ms 10 ms 1 75 TC, CASE TEMPERATURE ( C) tAV, TIME IN AVALANCHE (ms) ID, DRAIN CURRENT (A) 30 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) THIS AREA IS LIMITED BY rDS(on) 0.1 100 ms SINGLE PULSE TJ = MAX RATED 1s RJA = 105 oC/W 10s DC TA = 25 oC 0.01 0.01 0.1 1 10 100 TA = 25 oC 2 10 10 1 0.2 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, PULSE WIDTH (sec) VDS, DRAIN to SOURCE VOLTAGE (V) Figure 11. Forward Bias Safe Operating Area (c)2011 Fairchild Semiconductor Corporation FDMC7660DC Rev.C3 SINGLE PULSE RJA = 105 oC/W 3 10 Figure 12. Single Pulse Maximum Power Dissipation 5 www.fairchildsemi.com FDMC7660DC N-Channel Dual CoolTM PowerTrench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted NORMALIZED THERMAL IMPEDANCE, ZJA 2 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM 0.01 t1 t2 0.001 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TA SINGLE PULSE o RJA = 105 C/W 0.0001 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction-to-Ambient Transient Thermal Response Curve (c)2011 Fairchild Semiconductor Corporation FDMC7660DC Rev.C3 6 www.fairchildsemi.com FDMC7660DC N-Channel Dual CoolTM PowerTrench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted FDMC7660DC N-Channel Dual CoolTM PowerTrench(R) MOSFET Dimensional Outline and Pad Layout (c)2011 Fairchild Semiconductor Corporation FDMC7660DC Rev.C3 7 www.fairchildsemi.com tm tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I51 (c)2011 Fairchild Semiconductor Corporation FDMC7660DC Rev.C3 8 www.fairchildsemi.com FDMC7660DC N-Channel Dual CoolTM PowerTrench(R) MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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